In this volume, Prof. Zhang reviews the systematic theoretical
studies in his group on the growth mechanisms and properties of
silicon quantum dots, nanotubes and nanowires, including:
mechanisms of oxide-assisted growth of silicon nanowires, energetic
stability of pristine silicon nanowires and nanotubes, thermal
stability of hydrogen terminated silicon nanostructures,
size-dependent oxidation of hydrogen terminated silicon
nanostructures, excited-state relaxation of hydrogen terminated
silicon nanodots, and direct-indirect energy band transitions of
silicon nanowires and sheets by surface engineering and straining.
He also discusses the potential applications of these findings.
This book will mainly benefit those members of the scientific and
research community working in nanoscience, surface science,
nanomaterials and related fields.
General
Is the information for this product incomplete, wrong or inappropriate?
Let us know about it.
Does this product have an incorrect or missing image?
Send us a new image.
Is this product missing categories?
Add more categories.
Review This Product
No reviews yet - be the first to create one!