The second edition of "Internal Photoemission Spectroscopy"
thoroughly updates this vital, practical guide to internal
photoemission (IPE) phenomena and measurements. The book's
discussion of fundamental physical and technical aspects of IPE
spectroscopic applications is supplemented by an extended overview
of recent experimental results in swiftly advancing research
fields. These include the development of insulating materials for
advanced SiMOS technology, metal gate materials, development of
heterostructures based on high-mobility semiconductors, and more.
Recent results concerning the band structure of important
interfaces in novel materials are covered as well.
Internal photoemission involves the physics of charge carrier
photoemission from one solid to another, and different
spectroscopic applications of this phenomenon to solid state
heterojunctions. This technique complements conventional external
photoemission spectroscopy by analyzing interfaces separated from
the sample surface by a layer of a different solid or liquid.
Internal photoemission provides the most straightforward, reliable
information regarding the energy spectrum of electron states at
interfaces. At the same time, the method enables the analysis of
heterostructures relevant to modern micro- and nano-electronic
devices as well as new materials involved in their design and
fabrication.
First complete model description of the internal photoemission
phenomenaOverview of the most reliable energy barrier determination
procedures and trap characterization methodsOverview of the most
recent results on band structure of high-permittivity insulating
materials and their interfaces with semiconductors and metals
General
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