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Piezoresistive Effect of p-Type Single Crystalline 3C-SiC - Silicon Carbide Mechanical Sensors for Harsh Environments (Hardcover, 1st ed. 2017)
Loot Price: R2,961
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Piezoresistive Effect of p-Type Single Crystalline 3C-SiC - Silicon Carbide Mechanical Sensors for Harsh Environments (Hardcover, 1st ed. 2017)
Series: Springer Theses
Expected to ship within 10 - 15 working days
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This book addresses the piezoresistance in p-type 3C-SiC, which it
investigates using experimental characterization and theoretical
analysis. The gauge factor, the piezoresistive coefficients in
two-terminal and four-terminal resistors, the comparison between
single crystalline and nanocrystalline SiC, along with the
temperature dependence of the piezoresistive effect in p-type
3C-SiC are also discussed. Silicon carbide (SiC) is an excellent
material for electronic devices operating at high temperatures,
thanks to its large energy band gap, superior mechanical properties
and extreme chemical inertness. Among the numerous polytypes of
SiC, the cubic single crystal, which is also well known as 3C-SiC,
is the most promising platform for microelectromechanical (MEMS)
applications, as it can be epitaxially grown on an Si substrate
with diameters of up to several hundred millimeters. This feature
makes 3C-SiC compatible with the conventional Si-based micro/nano
processing and also cuts down the cost of SiC wafers. The
investigation into the piezoresistive effect in 3C-SiC is of
significant interest for the development of mechanical transducers
such as pressure sensors and strain sensors used for controlling
combustion and deep well drilling. Although a number of studies
have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC
and 6H-SiC, comparatively little attention has been paid to
piezoresistance in p-type 3C-SiC. In addition, the book
investigates the piezoresistive effect of top-down fabricated SiC
nanowires, revealing a high degree of sensitivity in nanowires
employing an innovative nano strain-amplifier. The large gauge
factors of the p-type 3C-SiC at both room temperature and high
temperatures found here indicate that this polytype could be
suitable for the development of mechanical sensing devices
operating in harsh environments with high temperatures.
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