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Dispersion Relations in Heavily-Doped Nanostructures (Hardcover, 1st ed. 2016)
Loot Price: R2,932
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Dispersion Relations in Heavily-Doped Nanostructures (Hardcover, 1st ed. 2016)
Series: Springer Tracts in Modern Physics, 265
Expected to ship within 10 - 15 working days
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This book presents the dispersion relation in heavily doped
nano-structures. The materials considered are III-V, II-VI, IV-VI,
GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe
superlattices and Bismuth Telluride semiconductors. The dispersion
relation is discussed under magnetic quantization and on the basis
of carrier energy spectra. The influences of magnetic field,
magneto inversion, and magneto nipi structures on nano-structures
is analyzed. The band structure of optoelectronic materials changes
with photo-excitation in a fundamental way according to newly
formulated electron dispersion laws. They control the quantum
effect in optoelectronic devices in the presence of light. The
measurement of band gaps in optoelectronic materials in the
presence of external photo-excitation is displayed. The influences
of magnetic quantization, crossed electric and quantizing fields,
intense electric fields on the on the dispersion relation in
heavily doped semiconductors and super-lattices are also discussed.
This book contains 200 open research problems which form the
integral part of the text and are useful for graduate students and
researchers. The book is written for post graduate students,
researchers and engineers.
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