CMOS Processors and Memories addresses the-state-of-the-art in
integrated circuit design in the context of emerging computing
systems. New design opportunities in memories and processor are
discussed. Emerging materials that can take system performance
beyond standard CMOS, like carbon nanotubes, graphene,
ferroelectrics and tunnel junctions are explored.
CMOS Processors and Memories is divided into two parts:
processors and memories. In the first part we start with high
performance, low power processor design, followed by a chapter on
multi-core processing. They both represent state-of-the-art
concepts in current computing industry. The third chapter deals
with asynchronous design that still carries lots of promise for
future computing needs. At the end we present a "hardware design
space exploration" methodology for implementing and analyzing the
hardware for the Bayesian inference framework. This particular
methodology involves: analyzing the computational cost and
exploring candidate hardware components, proposing various custom
architectures using both traditional CMOS and hybrid nanotechnology
CMOL. The first part concludes with hybrid CMOS-Nano
architectures.
The second, memory part covers state-of-the-art SRAM, DRAM, and
flash memories as well as emerging device concepts. Semiconductor
memory is a good example of the full custom design that applies
various analog and logic circuits to utilize the memory cell's
device physics. Critical physical effects that include tunneling,
hot electron injection, charge trapping (Flash memory) are
discussed in detail. Emerging memories like FRAM, PRAM and ReRAM
that depend on magnetization, electron spin alignment,
ferroelectric effect, built-in potential well, quantum effects, and
thermal melting are also described.
CMOS Processors and Memories is a must for anyone serious about
circuit design for future computing technologies. The book is
written by top notch international experts in industry and
academia. It can be used in graduate course curriculum.
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