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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets (Hardcover, 1st ed. 2017)
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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets (Hardcover, 1st ed. 2017)
Series: Springer Theses
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Total price: R3,346
Discovery Miles: 33 460
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This thesis describes the fabrication of
metal-insulator-semiconductor (MIS) structures using very high
permittivity dielectrics (based on rare earths) grown by
high-pressure sputtering from metallic targets. It demonstrates the
possibility of depositing high permittivity materials (GdScO3) by
means of high pressure sputtering from metallic targets using in
situ plasma oxidation on Si and indium phosphate (InP) substrates.
The advantage of this system is the high working pressure, which
causes the particles to undergo multiple collisions and become
thermalized before reaching the substrate in a pure diffusion
process, thus protecting the semiconductor surface from damage.
This work presents a unique fabrication using metallic targets and
involving a two-step deposition process: a thin metallic film is
sputtered in an Ar atmosphere and this film is then plasma oxidized
in situ. It also demonstrates the fabrication of GdScO3 on Si with
a permittivity value above 30 from metallic Gd and Sc targets.
Since co-sputtering was not possible, a nanolaminate of these
materials was deposited and annealed. The electrical properties of
these devices show that the material is highly interesting from a
microelectronic integration standpoint.
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