This book primarily focuses on the radiation effects and compact
model of silicon-germanium (SiGe) heterojunction bipolar
transistors (HBTs). It introduces the small-signal equivalent
circuit of SiGe HBTs including the distributed effects, and
proposes a novel direct analytical extraction technique based on
non-linear rational function fitting. It also presents the total
dose effects irradiated by gamma rays and heavy ions, as well as
the single-event transient induced by pulse laser microbeams. It
offers readers essential information on the irradiation effects
technique and the SiGe HBTs model using that technique.
General
Is the information for this product incomplete, wrong or inappropriate?
Let us know about it.
Does this product have an incorrect or missing image?
Send us a new image.
Is this product missing categories?
Add more categories.
Review This Product
No reviews yet - be the first to create one!
Welcome to Loot.co.za!
Sign in / Register |Wishlists & Gift Vouchers |Help | Advanced search
