This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

This book mainly deals with SuperConducting Fault Current Limiter (SCFCL), mainly the resistive SCFCLs. It aims to further disseminate the technical knowledge of SCFCL in particular to electrical engineers. The SCFCL is a new component and tool to better design and to be used in existing and future electric grids, altering the conventional way of thinking and planning.

Three-volumes book "Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors" is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume "Photodetectors" of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.

This book presents how metasurfaces are exploited to develop new low-cost single sensor based multispectral cameras. Multispectral cameras extend the concept of conventional colour cameras to capture images with multiple color bands and with narrow spectral passbands. Images from a multispectral camera can extract significant amount of additional information that the human eye or a normal camera fails to capture and thus have important applications in precision agriculture, forestry, medicine, object identifications, and classifications. Conventional multispectral cameras are made up of multiple image sensors each externally fitted with a narrow passband wavelength filters, optics and multiple electronics. The need for multiple sensors for each band results in a number of problems such as being bulky, power hungry and suffering from image co-registration problems which in turn limits their wide usage. The above problems can be eliminated if a multispectral camera is developed using one single image sensor.

This book deals with the analysis and design of CMOS current-mode circuits for data communications. CMOS current-mode sampled-data networks, i.e. switched-current circuits, are excluded. Major subjects covered in the book include: a critical comparison of voltage-mode and current-mode circuits; the building blocks of current-mode circuits: design techniques; modeling of wire channels, electrical signaling for Gbps data communications; ESD protection for current-mode circuits and more. This book will appeal to IC design engineers, hardware system engineers and others.

In this book new experimental investigations of properties of Josephson junctions and systems are explored with the help of recent developments in superconductivity. The theory of the Josephson effect is presented taking into account the influence of multiband and anisotropy effects in new superconducting compounds. Anharmonicity effects in current-phase relation on Josephson junctions dynamics are discussed. Recent studies in analogue and digital superconductivity electronics are presented. Topics of special interest include resistive single flux quantum logic in digital electronics. Application of Josephson junctions in quantum computing as superconducting quantum bits are analyzed. Particular attention is given to understanding chaotic behaviour of Josephson junctions and systems. The book is written for graduate students and researchers in the field of applied superconductivity.

Expert coverage of vacuum microelectronics–principles, devices, and applications

The field of vacuum microelectronics has advanced so swiftly that commercial devices are being fabricated, and applications are being developed in displays, wireless communications, spacecraft, and electronics for use in harsh environments. It is a rapidly evolving, interdisciplinary field encompassing electrical engineering, materials science, vacuum engineering, and applied physics.

This book surveys the fundamentals, technology, and device applications of this nascent field. Editor Wei Zhu brings together some of the world’s foremost experts to provide comprehensive and in-depth coverage of the entire spectrum of vacuum microelectronics. Topics include:

• Field emission theory
• Metal and silicon field emitter arrays
• Novel cold cathode materials
• Field emission flat panel displays
• Cold cathode microwave devices

Vacuum Microelectronics is intended for practitioners in the display, microwave, telecommunications, and microelectronics industries and in government and university research laboratories, as well as for graduate students majoring in electrical engineering, materials science, and physics. It provides cutting-edge, expert coverage of the subject and serves as both an introductory text and a professional reference.

This book systematically describes free-standing films and self-supporting nanoarrays growing on rigid and flexible substrates, and discusses the numerous applications in electronics, energy generation and storage in detail. The chapters present the various fabrication techniques used for growing self-supporting materials on flexible and rigid substrates, and free-standing films composed of semiconductors, inorganic, polymer and carbon hybrid materials.

In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics.In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.

Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.

The book addresses various approaches to television projection imaging on large screens using lasers. Results of theoretical and experimental studies of an acousto-optic projection system operating on the principle of projecting an image of an entire amplitude-modulated television line in a single laser pulse are presented. Characteristic features of image formation and requirements for individual components are discussed. Particular attention is paid to nonlinear distortions of the image signal, which show up most severely at low modulation signal frequencies. The feasibility of improving the process efficiency and image quality using acousto-optic modulators and pulsed lasers is studied.

This book presents selected peer-reviewed contributions from the 2019 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2019 (Hanoi, Vietnam, 7-10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical-mechanical properties of materials. The obtained results are based on new achievements in material sciences and computational approaches, methods and algorithms (in particular, finite-element and finite-difference modeling) applied to the solution of different technological, mechanical and physical problems. The obtained results have a significant interest for theory, modeling and test of advanced materials. Other results are devoted to promising devices demonstrating high accuracy, longevity and new opportunities to work effectively under critical temperatures and high pressures, in aggressive media, etc. These devices demonstrate improved comparative characteristics, caused by developed materials and composites, allowing investigation of physio-mechanical processes and phenomena based on scientific and technological progress.

This book provides a comprehensive overview of important aspects of solder materials including solderability and soldering reaction, physical metallurgy, mechanical properties, electromigration, and reliability of solder joint. The scope of this book covers mainly, but not limited to, the important research achievements of all the subjects having been disclosed and discussed in the literatures. It is a very informative book for those who are interested in learning the material properties of solders, carrying out fundamental research, and in carrying out practical applications. This book is an important resource for the various important subjects relating to solder materials.

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

'A very handy feature of this book includes an appendix section consisting of fifteen parts, each dedicated to listing equations and solution examples for calculating various important quantities for optoelectronic devices. This book is an in-depth technical resource for understanding the principles of various types of optoelectronic devices and systems. Students, as well as working professionals, would find this book useful for calculating quantities needed in the design of optical system components. There is a section, at the end of the book, along with an extension reference list at the end of each chapter that provides problems from each chapter, making this book suitable for an undergraduate or graduate class in electrical engineering on optoelectronic theory.'IEEE Electrical Insulation MagazineThis book provides a comprehensive treatment of the design and applications of optoelectronic devices. Optoelectronic devices such as light emitting diodes (LEDs), semiconductor lasers, photodetectors, optical fibers, and solar cells, are important components for solid state lighting systems, optical communication systems, and power generation systems. Optical fiber amplifiers and fiber lasers are also important for high power industrial applications and sensors. The applications of optoelectronic devices were first studied in the 1970's. Since then, the diversity and scope of optoelectronic device research and applications have been steadily growing.Optoelectronic Devices is self-contained and unified in presentation. It can be used as an advanced textbook by graduate students and practicing engineers. It is also suitable for non-experts who wish to have an overview of optoelectronic devices and systems. The treatments in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.

Heterogeneous integration uses packaging technology to integrate dissimilar chips, LED, MEMS, VCSEL, etc. from different fabless houses and with different functions and wafer sizes into a single system or subsystem. How are these dissimilar chips and optical components supposed to talk to each other? The answer is redistribution layers (RDLs). This book addresses the fabrication of RDLs for heterogeneous integrations, and especially focuses on RDLs on: A) organic substrates, B) silicon substrates (through-silicon via (TSV)-interposers), C) silicon substrates (bridges), D) fan-out substrates, and E) ASIC, memory, LED, MEMS, and VCSEL systems. The book offers a valuable asset for researchers, engineers, and graduate students in the fields of semiconductor packaging, materials sciences, mechanical engineering, electronic engineering, telecommunications, networking, etc.

Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: - Radiation effects on semiconductor components (TID, SEE) - Radiation Hardening by Design (RHBD) Techniques - Rad-hard SRAMs - Rad-hard PROMs - Rad-hard Flash NVMs - Rad-hard ReRAMs - Rad-hard emerging technologies

Quantum wires are artificial structures characterized by nanoscale cross sections that contain charged particles moving along a single degree of freedom. With electronic motions constrained into standing modes along with the two other spatial directions, they have been primarily investigated for their unidimensional dynamics of quantum-confined charge carriers, which eventually led to broad applications in large-scale nanoelectronics. This book is a compilation of articles that span more than 30 years of research on developing comprehensive physical models that describe the physical properties of these unidimensional semiconductor structures. The articles address the effect of quantum confinement on lattice vibrations, carrier scattering rates, and charge transport as well as present practical examples of solutions to the Boltzmann equation by analytical techniques and by numerical simulations such as the Monte Carlo method. The book also presents topics on quantum transport and spin effects in unidimensional molecular structures such as carbon nanotubes and graphene nanoribbons in terms of non-equilibrium Green’s function approaches and density functional theory.

Metamaterials artificially structured materials with engineered electromagnetic properties have enabled unprecedented flexibility in manipulating electromagnetic waves and producing new functionalities. This book details recent advances in the study of optical metamaterials, ranging from fundamental aspects to up-to-date implementations, in one unified treatment. Important recent developments and applications such as superlens and cloaking devices are also treated in detail and made understandable. The planned monograph can serve as a very timely book for both newcomers and advanced researchers in this extremely rapid evolving field."

This thesis presents the discovery of a surprising phase transition between a topological and a broken symmetry phase. Phase transitions between broken symmetry phases involve a change in symmetry and those between topological phases require a change in topological order; in rare cases, however, transitions may occur between these two broad classes of phases in which the vanishing of the topological order is accompanied by the emergence of a broken symmetry. This thesis describes observations of such a special phase transition in the two-dimensional electron gas confined in the GaAs/AlGaAs structures. When tuned by hydrostatic pressure, the = 5/2 and = 7/2 fractional quantum Hall states, believed to be prototypical non-Abelian topological phases of the Pfaffian universality class, give way to an electronic nematic phase. Remarkably, the fractional quantum Hall states involved are due to pairing of emergent particles called composite fermions. The findings reported here, therefore, provide an interesting example of competition of pairing and nematicity. This thesis provides an introduction to quantum Hall physics of the two-dimensional electron gas, contains details of the high pressure experiments, and offers a discussion of the ramifications and of the origins of the newly reported phase transition.

This book provides comprehensive, state-of-the art coverage of photorefractive organic compounds, a class of material with the ability to change their index of refraction upon illumination. The change is both dynamic and reversible. Dynamic because no external processing is required for the index modulation to be revealed, and reversible because the index change can be modified or suppressed by altering the illumination pattern. These properties make photorefractive materials very attractive candidates for many applications such as image restoration, correlation, beam conjugation, non-destructive testing, data storage, imaging through scattering media, holographic imaging and display. The field of photorefractive organic material is also closely related to organic photovoltaic and light emitting diode (OLED), which makes new discoveries in one field applicable to others.

New to this edition: Updated to using OrCAD Release 17.2 and its new features; Coverage of PSPICE extra features: PSpice Designer, PSpice Designer Plus, Modelling Application, PSpice Part Search Symbol Viewer, PSpice Report, Associate PSpice model, New delay functions for Behavioural Simulation Models, New Models, Support for negative values in hysteresis voltage and threshold voltage; A new chapter on PSpice Advanced Analysis Analog Design and Simulation Using OrCAD Capture and PSpice, Second Edition provides step-by-step instructions on how to use the Cadence/OrCAD family of Electronic Design Automation software for analog design and simulation. The book explains how to enter schematics in Capture, set up project types, project libraries and prepare circuits for PSpice simulation. There are chapters on the different analysis types for DC Bias point, DC sweep, AC frequency sweep, Parametric analysis, Temperature analysis, Performance Analysis, Noise analysis, Sensitivity and Monte Carlo simulation. Subsequent chapters explain how the Stimulus Editor is used to define custom analog and digital signals, how the Model Editor is used to view and create new PSpice models and Capture parts and how the Magnetic Parts Editor is used to design transformers and inductors. Other chapters include Analog Behaviorial models, Test Benches as well as how to create hierarchical designs. The book includes the latest features in the OrCAD 17.2 release and there are exercises with step by step instructions at the end of each chapter that enables the reader to progress based upon their experience and knowledge gained from previous chapters. The author worked for Cadence for over eight years and supported and delivered OrCAD PSpice training courses all over Europe. This book has been endorsed by Cadence. In addition, there are new chapters on the PSpice Advanced Analysis suite of tools: Sensitivity Analysis, Optimizer, Monte Carlo, and Smoke Analysis.The chapters show how circuit performance can effectively be maximised and optimised for variations in component tolerances, temperature effects, manufacturing yields and component stress.

A modern challenge is for solar cell materials to enable the highest solar energy conversion efficiencies, at costs as low as possible, and at an energy balance as sustainable as necessary in the future. This textbook explains the principles, concepts and materials used in solar cells. It combines basic knowledge about solar cells and the demanded criteria for the materials with a comprehensive introduction into each of the four classes of materials for solar cells, i.e. solar cells based on crystalline silicon, epitaxial layer systems of III-V semiconductors, thin-film absorbers on foreign substrates, and nano-composite absorbers. In this sense, it bridges a gap between basic literature on the physics of solar cells and books specialized on certain types of solar cells.The last five years had several breakthroughs in photovoltaics and in the research on solar cells and solar cell materials. We consider them in this second edition. For example, the high potential of crystalline silicon with charge-selective hetero-junctions and alkaline treatments of thin-film absorbers, based on chalcopyrite, enabled new records. Research activities were boosted by the class of hybrid organic-inorganic metal halide perovskites, a promising newcomer in the field.This is essential reading for students interested in solar cells and materials for solar cells. It encourages students to solve tasks at the end of each chapter. It has been well applied for postgraduate students with background in materials science, engineering, chemistry or physics.

A Comprehensive Source for Taking on the Next Stage of OLED R&D OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes brings together key topics across the field of organic light-emitting diodes (OLEDs), from fundamental chemistry and physics to practical materials science and engineering aspects to design and manufacturing factors. Experts from top academic institutions, industry, and national laboratories provide thorough, up-to-date coverage on the most useful materials, devices, and design and fabrication methods for high-efficiency lighting. The first part of the book covers all the construction materials of OLED devices, from substrate to encapsulation. For the first time in book form, the second part addresses challenges in devices and processing, including architectures and methods for new OLED lighting and display technologies. The book is suitable for a broad audience, including materials scientists, device physicists, synthetic chemists, and electrical engineers. It can also serve as an introduction for graduate students interested in applied aspects of photophysics and electrochemistry in organic thin films.

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light emitting diodes and solar cells. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in quaternary systems based on III-V semiconductors, providing he first systematic account of phase equilibria in quaternary systems based on III-V semiconductors and making research originally published in Russian accessible to the wider scientific community. Features: Contains up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases