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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:
With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.
This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure exhibit an abundance of macroscopic physical properties involving the strong coupling between the electronic, spin, and structural degrees of freedom, and the interplay between magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such oxide heterostructures, promising novel functionalities and device concepts. The book consists of chapters on some of the key innovations in the field over recent years, including strongly correlated oxide heterostructures, magnetoelectric coupling and multiferroic materials, thermoelectric phenomena, and two-dimensional electron gases at oxide interfaces. The book covers the core principles, describes experimental approaches to fabricate and characterize oxide heterostructures, demonstrates new functional properties of these materials, and provides an overview of novel applications.
The focused ion beam (FIB) system is an important tool for understanding and manipulating the structure of materials at the nanoscale. Combining this system with an electron beam creates a DualBeam - a single system that can function as an imaging, analytical and sample modification tool. Presenting the principles, capabilities, challenges and applications of the FIB technique, this edited volume, first published in 2007, comprehensively covers the ion beam technology including the DualBeam. The basic principles of ion beam and two-beam systems, their interaction with materials, etching and deposition are all covered, as well as in situ materials characterization, sample preparation, three-dimensional reconstruction and applications in biomaterials and nanotechnology. With nanostructured materials becoming increasingly important in micromechanical, electronic and magnetic devices, this self-contained review of the range of ion beam methods, their advantages, and when best to implement them is a valuable resource for researchers in materials science, electrical engineering and nanotechnology.
Nanofabrication is critical to the realization of potential benefits in the field of electronics, bioengineering and material science. One enabling technology in nanofabrication is Tip-Based Nanofabrication, which makes use of functionalized micro-cantilevers with nanoscale tips. Tip-Based Nanofabrication: Fundamentals and Applications discusses the development of cantilevered nanotips and how they evolved from scanning probe microscopy and are able to manipulate environments at nanoscale on substrates generating different nanoscale patterns and structures. Also covered are the advantages of ultra-high resolution capability, how to use tip based nanofabrication technology as a tool in the manufacturing of nanoscale structures, single-probe tip technologies, multiple-probe tip methodology, 3-D modeling using tip based nanofabrication and the latest in imaging technology.
Iptycenes Chemistry: From Synthesis to Applications provides a comprehensive overview of the development of iptycene chemistry in the past seventy years. This book covers: (1) the basic nomenclature and general properties of iptycenes and their derivatives; (2) the synthesis and functionalization reactions of triptycenes, pentiptycenes, higher iptycenes, heterotriptycenes, and homotriptycenes; (3) the methods for the preparation of iptycene-based polymers with different types; and (4) the applications of iptycenes and their derivatives in molecular machines, materials science, host-guest chemistry, self-assembly, coordination chemistry, physical organic chemistry, medicinal chemistry, and so on. Consequently, such a book is not only helpful to researchers working in iptycene chemistry, but can also facilitate future research in wide areas.
This book introduces readers to the cutting-edge topic of nanophotonic photochemical reactions and their applications. From among the various innovations in optical technology achieved by means of the non-uniform optical near field, it focuses on photochemical reactions at the nanoscale. Optical near fields are the elementary surface excitations of nanometric particles with non-uniform field distributions. After reviewing the unique properties of the non-uniform optical field, the book presents a range of applications of near-field assisted photochemical reactions, including near-field etching, visible water splitting, carbon dioxide reduction and reactions in solar cells.
This book is a wide-ranging survey of the physics of out-of-equilibrium systems of correlated electrons, ranging from the theoretical, to the numerical, computational and experimental aspects. It starts from basic approaches to non-equilibrium physics, such as the mean-field approach, then proceeds to more advanced methods, such as dynamical mean-field theory and master equation approaches. Lastly, it offers a comprehensive overview of the latest advances in experimental investigations of complex quantum materials by means of ultrafast spectroscopy.
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
* Covers the state-of-the-art progress on nanotechnology for reducing light pollution * Presents many approaches and technologies for controlling light pollution * Provides fundamentals of light, causes of pollution, their effects and control * Covers many emerging technologies and their applications in smart lighting systems * Provides new directions to scientists, researchers, and students to better understand the principle, technologies, and applications of nanotechnology in light pollution
This book presents 50 selected peer-reviewed reports from the 2016 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2016 (Surabaya, Indonesia, 19-22 July, 2016). The Proceedings are devoted to processing techniques, physics, mechanics, and applications of advanced materials. As such, they examine a wide spectrum of nanostructures, ferroelectric crystals, materials and composites, as well as other promising materials with special properties. They present nanotechnology approaches, modern environmentally friendly piezoelectric and ferromagnetic techniques, and physical and mechanical studies of the structural and physical-mechanical properties of the materials discussed. Further, a broad range of original mathematical and numerical methods is applied to solve various technological, mechanical and physical problems, which are inte resting for applications. Great attention is devoted to novel devices with high accuracy, longevity and extended possibilities to work in wide temperature and pressure ranges, aggressive media, etc., which show improved characteristics, defined by the developed materials and composites, opening new possibilities to study different physico-mechanical processes and phenomena.
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists.
The history of this book begins way back in 1982. At that time a research proposal was filed with the Dutch Foundation for Fundamental Research on Matter concerning research to model defects in the layer structure of integrated circuits. It was projected that the results may be useful for yield estimates, fault statistics and for the design of fault tolerant structures. The reviewers were not in favor of this proposal and it disappeared in the drawers. Shortly afterwards some microelectronics industries realized that their survival may depend on a better integration between technology-and design-laboratories. For years the "silicon foundry" concept had suggested a fairly rigorous separation between the two areas. The expectation was that many small design companies would share the investment into the extremely costful Silicon fabrication plants while designing large lots of application-specific integrated circuits (ASIC's). Those fabrication plants would be concentrated with only a few market leaders.
A lively and thought-provoking look at the future of microelectronics Nanotechnology has been named by the U.S. government as one of the most important areas of impending technology. It is a common view among leading professionals in microelectronics that current explosive developments in the field will likely lead to profound paradigm shifts in the near future. Identifying plausible scenarios for the forthcoming evolution of microelectronics presents a tremendous opportunity for constructive action today, especially since our economy and, indeed, our civilization seem destined to be irrevocably shaped by this technology. Based on ideas and discussions arising from the third meeting in the Future Trends in Microelectronics (FTM) workshop series, held in the summer of 2001, this timely and intriguing contributed volume provides a unique forum for today’s leading experts in the semiconductor microelectronics field to discuss the future evolution of their profession. Demonstrating a diversity of opinions, leading professionals in industry, academia, and government address such provocative questions as:
In this compilation of original research, contributors from academia, government, and industry provide assessments of important new ideas and approaches. The result is a lively, intelligent presentation of diverse points of view that should be required reading for professionals and students in both the microelectronic industry and academia.
This book is about aerospace sensors, their principles of operation, and their typical advantages, shortcomings, and vulnerabilities. They are described in the framework of the subsystems where they function and in accordance with the flight mission they are designed to serve. The book is intended for students at the advanced undergraduate or graduate level and for research engineers who need to acquire this kind of knowledge. An effort has been made to explain, within a uniform framework of mathematical modeling, the physics upon which a certain sensor concept is based, its construction, its dynamics, and its error sources and their corresponding mathematical models. Equipped with such knowledge and understanding, the student or research engineer should be able to get involved in research and development activities of guidance, control, and navigation systems and to contribute to the initiation of novel ideas in the aerospace sensor field. As a designer and systems engineer, he should be able to correctly interpret the various items in a technical data list and thus to interact intelligently with manufacturers' representatives and other members of an R&D team. Much of the text has evolved from undergraduate and graduate courses given by the author during the past seventeen years at the Department of Aerospace Engineering at the Technion- Israel Institute of Technology and from his earlier research and development experience in flight control, guidance, navigation, and avionics at the Ministry of Defense Central Research Institute.
Master Today's Best Practices for Building Reusable .NET Frameworks, Libraries, and Components ".NET Core [contains] advances important to cloud application developers: performance, resource utilization, container support, and others. This third edition of Framework Design Guidelines adds guidelines related to changes that the .NET team adopted during transition from the world of client-server application to the world of the Cloud." -From the Foreword by Scott Guthrie Framework Design Guidelines has long been the definitive guide to best practices for developing components and component libraries in Microsoft .NET. Now, this third edition has been fully revised to reflect game-changing API design innovations introduced by Microsoft through eight recent updates to C#, eleven updates to .NET Framework, and the emergence and evolution of .NET Core. Three leading .NET architects share the same guidance Microsoft teams are using to evolve .NET, so you can design well-performing components that feel like natural extensions to the platform. Building on the book's proven explanatory style, the authors and expert annotators offer insider guidance on new .NET and C# concepts, including major advances in asynchronous programming and lightweight memory access. Throughout, they clarify and refresh existing content, helping you take full advantage of best practices based on C# 8, .NET Framework 4.8, and .NET Core. Discover which practices should always, generally, rarely, or never be used-including practices that are no longer recommended Learn the general philosophy and fundamental principles of modern framework design Explore common framework design patterns with up-to-date C# examples Apply best practices for naming, types, extensibility, and exceptions Learn how to design libraries that scale in the cloud Master new async programming techniques utilizing Task and ValueTask Make the most of the Memory and Span types for lightweight memory access This guide is an indispensable resource for everyone who builds reusable .NET-based frameworks, libraries, or components at any scale: large system frameworks, medium-size reusable layers of large distributed systems, extensions to system frameworks, or even small shared components. Register your book for convenient access to downloads, updates, and/or corrections as they become available. See inside book for details.
Semiconductor quantum optics is on the verge of moving from the lab to real world applications. When stepping from basic research to new technologies, device engineers will need new simulation tools for the design and optimization of quantum light sources, which combine classical device physics with cavity quantum electrodynamics. This thesis aims to provide a holistic description of single-photon emitting diodes by bridging the gap between microscopic and macroscopic modeling approaches. The central result is a novel hybrid quantum-classical model system that self-consistently couples semi-classical carrier transport theory with open quantum many-body systems. This allows for a comprehensive description of quantum light emitting diodes on multiple scales: It enables the calculation of the quantum optical figures of merit together with the simulation of the spatially resolved current flow in complex, multi-dimensional semiconductor device geometries out of one box. The hybrid system is shown to be consistent with fundamental laws of (non-)equilibrium thermodynamics and is demonstrated by numerical simulations of realistic devices.
This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mobility. Recent progress in quantum structures such as two-dimensional electron gas, superlattices, quantum Hall effect, electron confinement and the Landauer formula are included. The Quantum Hall effect is presented with different models. In the second edition, the addition energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. Also the physics of semiconductor Lasers is described in detail including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue Lasers, optical confinement, laser modes, strained quantum wells lasers which will give insight into the physics of various kinds of semiconductor lasers, in addition to the various processes of luminescence.
The science and technology related to semiconductors have received significant attention for applications in various fields including microelectronics, nanophotonics, and biotechnologies. Understanding of semiconductors has advanced to such a level that we are now able to design novel system complexes before we go for the proof-of-principle experimental demonstration. This book explains the experimental setups for optical spectral analysis of semiconductors and describes the experimental methods and the basic quantum mechanical principles underlying the fast-developing nanotechnology for semiconductors. Further, it uses numerous case studies with detailed theoretical discussions and calculations to demonstrate the data analysis. Covering structures ranging from bulk to the nanoscale, it examines applications in the semiconductor industry and biomedicine. Starting from the most basic physics of geometric optics, wave optics, quantum mechanics, solid-state physics, it provides a self-contained resource on the subject for university undergraduates. The book can be further used as a toolbox for researching and developing semiconductor nanotechnology based on spectroscopy.
Semiconductors with optical characteristics have found widespread use in evolving semiconductor photovoltaics, where optical features are important. The industrialization of semiconductors and their allied applications have paved the way for optical measurement techniques to be used in new ways. Due to their unique properties, semiconductors are key components in the daily employed technologies in healthcare, computing, communications, green energy, and a range of other uses. This book examines the fundamental optical properties and applications of semiconductors. It summarizes the information as well as the optical characteristics and applicability of semiconductors through an in-depth review of the literature. Accomplished experts in the field share their knowledge and examine new developments. FEATURES Comprehensive coverage of all types of optical applications using semiconductors Explores relevant composite materials and devices for each application Addresses the optical properties of crystalline and amorphous semiconductors Describes new developments in the field and future potential applications Optical Properties and Applications of Semiconductors is a comprehensive reference and an invaluable resource for engineers, scientists, academics, and industry R&D teams working in applied physics.
This book provides readers with a detailed overview of second- and third-order nonlinearities in various nanostructures, as well as their potential applications. Interest in the field of nonlinear optics has grown exponentially in recent years and, as a result, there is increasing research on novel nonlinear phenomena and the development of nonlinear photonic devices. Thus, such a book serves as a comprehensive guide for researchers in the field and those seeking to become familiar with it. This text focuses on the nonlinear properties of nanostructured systems that arise as a result of optical wave mixing. The authors present a review of nonlinear optical processes on the nanoscale and provide theoretical descriptions for second and third-order optical nonlinearities in nanostructures such as carbon allotropes, metallic nanostructures, semiconductors, nanocrystals, and complex geometries. Here, the characterization and potential applications of these nanomaterials are also discussed. The factors that determine the nonlinear susceptibility in these systems are identified as well as the influence of physical mechanisms emerging from resonance and off-resonance excitations. In addition, the authors detail the effects driven by important phenomena such as quantum confinement, localized surface plasmon resonance, Fano resonances, bound states, and the Purcell effect on specific nanostructured systems. Readers are provided with a groundwork for future research as well as new perspectives in this growing field.
This book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc. The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the "memory wall." The authors discuss memory design from various perspectives: emerging memory technologies are employed in the memory hierarchy with novel architecture modification; hybrid memory structure is introduced to leverage advantages from multiple memory technologies; an analytical model named "Moguls" is introduced to explore quantitatively the optimization design of a memory hierarchy; finally, the vulnerability of the CMPs to radiation-based soft errors is improved by replacing different levels of on-chip memory with STT-RAMs.
2D Materials for Infrared and Terahertz Detectors provides an overview of the performance of emerging detector materials, while also offering, for the first time, a comparison with traditional materials used in the fabrication of infrared and terahertz detectors. Since the discovery of graphene, its applications to electronic and optoelectronic devices have been intensively researched. The extraordinary electronic and optical properties allow graphene and other 2D materials to be promising candidates for infrared (IR) and terahertz (THz) photodetectors, and yet it appears that the development of new detectors using these materials is still secondary to those using traditional materials. This book explores this phenomenon, as well as the advantages and disadvantages of using 2D materials. Special attention is directed toward the identification of the most-effective hybrid 2D materials in infrared and terahertz detectors, as well as future trends. Written by one of the world's leading researchers in the field of IR optoelectronics, this book will be a must-read for researchers and graduate students in photodetectors and related fields. Features * Offers a comprehensive overview of the different types of 2D materials used in fabrication of IR and THz detectors, and includes their advantages/disadvantages * The first book to compare new detectors to a wide family of common, commercially available detectors that use traditional materials.
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