Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.

This book is a comprehensive introduction to nanoscale materials for sensor applications, with a focus on connecting the fundamental laws of physics and the chemistry of materials with device design. Nanoscale sensors can be used for a wide variety of applications, including the detection of gases, optical signals, and mechanical strain, and can meet the need to detect and quantify the presence of gaseous pollutants or other dangerous substances in the environment. Gas sensors have found various applications in our daily lives and in industry. Semiconductive oxides, including SnO2, ZnO, Fe2O3, and In2O3, are promising candidates for gas sensor applications. Carbon nanomaterials are becoming increasingly available as off-the-shelf components, and this makes nanotechnology more exciting and approachable than ever before. Nano-wire based field- effect transistor biosensors have also received much attention in recent years as a way to achieve ultra-sensitive and label-free sensing of molecules of biological interest. A diverse array of semiconductor-based nanostructures has been synthesized for use as a photoelectrochemical sensor or biosensor in the detection of low concentrations of analytes. A novel acoustic sensor for structural health monitoring (SHM) that utilizes lead zirconate titanate (PZT) nano- active fiber composites (NAFCs) is described as well.

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" Materials Today "... well written, with clear, lucid explanations ..." Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book's chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light emitting diodes and solar cells. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This book covers all known information about phase relations in multinary systems based on III-V semiconductors, providing the first systematic account of phase equilibria in multinary systems based on III-V semiconductors and making research originally published in Russian accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists. Features: Provides up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases

New micro and nanopatterning technologies have been developed in the last years as less costly and more flexible alternatives to phtolithograpic processing. These technologies have not only impacted on recent developments in microelectronics, but also in emerging fields such as disposable biosensors, scaffolds for tissue engineering, non-biofouling coatings, high adherence devices, or photonic structures for the visible spectrum. This handbook presents the current processing methods suitable for the fabrication of micro- and nanostructured surfaces made out of polymeric materials. It covers the steps and materials involved, the resulting structures, and is rounded off by a part on applications. As a result, chemists, material scientists, and physicists gain a critical understanding of this topic at an early stage of its development.

This unique compendium emphasizes key factors driving the performance of thermoelectric energy conversion systems. Important design parameters such as heat transfer at the boundaries of the system, material properties, and form factors are carefully analyzed and optimized for performance including the cost-performance trade-off. Numbers of examples are provided on the applications of thermoelectric technologies, e.g., power generation, cooling of electronic components, and waste heat recovery in wearable devices.This must-have volume also includes an interactive modeling software package developed on the nanoHUB (https://nanohub.org/) platform. Professionals, researchers, academics, undergraduate and graduate students will be able to study the impact of material properties and key design parameters on the overall thermoelectric system performance as well as the large scale implementation in the society.

An effective and cost efficient protection of electronic system against ESD stress pulses specified by IEC 61000-4-2 is paramount for any system design. This pioneering book presents the collective knowledge of system designers and system testing experts and state-of-the-art techniques for achieving efficient system-level ESD protection, with minimum impact on the system performance. All categories of system failures ranging from 'hard' to 'soft' types are considered to review simulation and tool applications that can be used. The principal focus of System Level ESD Co-Design is defining and establishing the importance of co-design efforts from both IC supplier and system builder perspectives. ESD designers often face challenges in meeting customers' system-level ESD requirements and, therefore, a clear understanding of the techniques presented here will facilitate effective simulation approaches leading to better solutions without compromising system performance. With contributions from Robert Ashton, Jeffrey Dunnihoo, Micheal Hopkins, Pratik Maheshwari, David Pomerenke, Wolfgang Reinprecht, and Matti Usumaki, readers benefit from hands-on experience and in-depth knowledge in topics ranging from ESD design and the physics of system ESD phenomena to tools and techniques to address soft failures and strategies to design ESD-robust systems that include mobile and automotive applications. The first dedicated resource to system-level ESD co-design, this is an essential reference for industry ESD designers, system builders, IC suppliers and customers and also Original Equipment Manufacturers (OEMs). Key features: * Clarifies the concept of system level ESD protection. * Introduces a co-design approach for ESD robust systems. * Details soft and hard ESD fail mechanisms. * Detailed protection strategies for both mobile and automotive applications. * Explains simulation tools and methodology for system level ESD co-design and overviews available test methods and standards. * Highlights economic benefits of system ESD co-design.

Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices, piezodevices, and electroluminescencedevices were discussed.

Optoelectronic Organic-Inorganic Semiconductor Heterojunctions summarizes advances in the development of organic-inorganic semiconductor heterojunctions, points out challenges and possible solutions for material/device design, and evaluates prospects for commercial applications. Introduces the concept and basic mechanism of semiconductor heterojunctions Describes a series of organic-inorganic semiconductor heterojunctions with desirable electrical and optical properties for optoelectronic devices Discusses typical devices such as solar cells, photo-detectors, and optoelectronic memories Outlines the materials and device challenges as well as possible strategies to promote the commercial translation of semiconductor heterojunctions-based optoelectronic devices Aimed at graduate students and researchers working in solid-state materials and electronics, this book offers a comprehensive yet accessible view of the state of the art and future directions.

This thesis explores an amazing family of oxide compounds - the nickelates - known for their metal-to-insulator transition and, in the case of LaNiO3, to be a possible building block for designing a synthetic high Tc superconductor. Competition between various fascinating phases makes these materials very sensitive to external parameters and it is thus possible to dramatically tune their properties. This work on ultrathin LaNiO3 and the solid solution Nd1-xLaxNiO3 has important implications for the search for superconductivity in this class of materials.

This book presents theoretical explorations of several fundamental problems in the dynamics and control of flexible beam systems. By integrating fresh concepts and results to form a systematic approach to control, it establishes a basic theoretical framework. It includes typical control design examples verified using MATLAB simulation, which in turn illustrate the successful practical applications of active vibration control theory for flexible beam systems. The book is primarily intended for researchers and engineers in the control system and mechanical engineering community, offering them a unique resource.

This book offers an overview of polariton Bose-Einstein condensation and the emerging field of polaritonics, providing insights into the necessary theoretical basics, technological aspects and experimental studies in this fascinating field of science. Following a summary of theoretical considerations, it guides readers through the rich physics of polariton systems, shedding light on the concept of the polariton laser, polariton microcavities, and the technical realization of optoelectronic devices with polaritonic emissions, before discussing the role of external fields used for the manipulation and control of exciton-polaritons. A glossary provides simplified summaries of the most frequently discussed topics, allowing readers to quickly familiarize themselves with the content. The book pursues an uncomplicated and intuitive approach to the topics covered, while also providing a brief outlook on current and future work. Its straightforward content will make it accessible to a broad readership, ranging from research fellows, lecturers and students to interested science and engineering professionals in the interdisciplinary domains of nanotechnology, photonics, materials sciences and quantum physics.

The work described in this PhD thesis is a study of a real implementation of a track-finder system which could provide reconstructed high transverse momentum tracks to the first-level trigger of the High Luminosity LHC upgrade of the CMS experiment. This is vital for the future success of CMS, since otherwise it will be impossible to achieve the trigger selectivity needed to contain the very high event rates. The unique and extremely challenging requirement of the system is to utilise the enormous volume of tracker data within a few microseconds to arrive at a trigger decision. The track-finder demonstrator described proved unequivocally, using existing hardware, that a real-time track-finder could be built using present-generation FPGA-based technology which would meet the latency and performance requirements of the future tracker. This means that more advanced hardware customised for the new CMS tracker should be even more capable, and will deliver very significant gains for the future physics returns from the LHC.

Digital images have several benefits, such as faster and inexpensive processing cost, easy storage and communication, immediate quality assessment, multiple copying while preserving quality, swift and economical reproduction, and adaptable manipulation. Digital medical images play a vital role in everyday life. Medical imaging is the process of producing visible images of inner structures of the body for scientific and medical study and treatment as well as a view of the function of interior tissues. This process pursues disorder identification and management. Medical imaging in 2D and 3D includes many techniques and operations such as image gaining, storage, presentation, and communication. The 2D and 3D images can be processed in multiple dimensions. Depending on the requirement of a specific problem, one must identify various features of 2D or 3D images while applying suitable algorithms. These image processing techniques began in the 1960s and were used in such fields as space, clinical purposes, the arts, and television image improvement. In the 1970s, with the development of computer systems, the cost of image processing was reduced and processes became faster. In the 2000s, image processing became quicker, inexpensive, and simpler. In the 2020s, image processing has become a more accurate, more efficient, and self-learning technology. This book highlights the framework of the robust and novel methods for medical image processing techniques in 2D and 3D. The chapters explore existing and emerging image challenges and opportunities in the medical field using various medical image processing techniques. The book discusses real-time applications for artificial intelligence and machine learning in medical image processing. The authors also discuss implementation strategies and future research directions for the design and application requirements of these systems. This book will benefit researchers in the medical image processing field as well as those looking to promote the mutual understanding of researchers within different disciplines that incorporate AI and machine learning. FEATURES Highlights the framework of robust and novel methods for medical image processing techniques Discusses implementation strategies and future research directions for the design and application requirements of medical imaging Examines real-time application needs Explores existing and emerging image challenges and opportunities in the medical field

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third Edition provides a complete course in quantum mechanics for students of semiconductor device physics and electrical engineering. It provides the necessary background to quantum theory for those starting work on micro- and nanoelectronic structures and is particularly useful for those beginning work with modern semiconductors devices, lasers, and qubits. This book was developed from a course the author has taught for many years with a style and order of presentation of material specifically designed for this audience. It introduces the main concepts of quantum mechanics which are important in everyday solid-state physics and electronics. Each topic includes examples which have been carefully chosen to draw upon relevant experimental research. It also includes problems with solutions to test understanding of theory. Full updated throughout, the third edition contains the latest developments, experiments, and device concepts, in addition to three fully revised chapters on operators and expectations and spin angular momentum, it contains completely new material on superconducting devices and approaches to quantum computing.

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third Edition provides a complete course in quantum mechanics for students of semiconductor device physics and electrical engineering. It provides the necessary background to quantum theory for those starting work on micro- and nanoelectronic structures and is particularly useful for those beginning work with modern semiconductors devices, lasers, and qubits. This book was developed from a course the author has taught for many years with a style and order of presentation of material specifically designed for this audience. It introduces the main concepts of quantum mechanics which are important in everyday solid-state physics and electronics. Each topic includes examples which have been carefully chosen to draw upon relevant experimental research. It also includes problems with solutions to test understanding of theory. Full updated throughout, the third edition contains the latest developments, experiments, and device concepts, in addition to three fully revised chapters on operators and expectations and spin angular momentum, it contains completely new material on superconducting devices and approaches to quantum computing.

Electronic Conduction: Classical and Quantum Theory to Nanoelectronic Devices provides a concise, complete introduction to the fundamental principles of electronic conduction in microelectronic and nanoelectronic devices, with an emphasis on integrating the quantum aspects of conduction. The chapter coverage begins by presenting the classical theory of conduction, including introductory chapters on quantum mechanics and the solid state, then moving to a complete presentation of essential theory for understanding modern electronic devices. The author's unique approach is applicable to microscale and nanoscale device simulation, which is particularly timely given the explosion in the nanoelectronics field. Features Self-contained Gives a complete account of classical and quantum aspects of conduction in nanometer scale devices Emphasises core principles, the book can be useful to electrical engineers and material scientists, and no prior course in semiconductors is necessary Highlights the bridge to modern electronics, first presenting the physics, and then the engineering complications related to quantum behaviour Includes many clear, illustrative diagrams and chapter problem sets Gives an account of post-Silicon devices such as the GaAs MOSFET, the CNT-FET and the vacuum transistor Showcases why quantum mechanics is necessary with modern devices due to their size and corresponding electron transport properties Discusses all the issues that will enable readers to conduct their own research

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore's law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.

Nanometer scale physics is progressing rapidly: the top-down approach of semiconductor technology will soon encounter the scale of the bottom-up approaches of supramolecular chemistry and spatially localized excitations in ionic crystals. Advances in this area have already led to applications in optoelectronics. More may be expected.

This book deals with the role of structure confinement in the spectroscopic characteristics of physical systems. It examines the fabrication, measurement and understanding of the relevant structures. It reports progress in the theory and in experimental techniques, starting with the consideration of fundamental principles and leading to the frontiers of research. The subjects dealt with include such spatially resolved structures as quantum wells, quantum wires, quantum dots, and luminescence, in both theoretical and practical terms.