This book presents the latest theoretical studies giving new predictions and interpretations on the quantum correlation in molecular dynamics induced by ultrashort laser pulses. The author quantifies the amount of correlation in terms of entanglement by employing methods developed in quantum information science, in particular applied to the photoionization of a hydrogen molecule. It is also revealed that the photoelectron-ion correlation affects the vibrational dynamics of the molecular ion and induces the attosecond-level time delay in the molecular vibration. Furthermore, the book also presents how molecular vibration can couple to photons in a plasmoic nanocavity. Physicists and chemists interested in the ultrafast molecular dynamics would be the most relevant readers. They can learn how we can employ the quantum-information-science tools to understand the correlation in the molecular dynamics and why we should consider the correlation between the photoelectron and the molecular ion to describe the ion's dynamics. They can also learn how to treat a molecule coupled to photons in a nanocavity. All the topics are related to the state-of-the-art experiments, and so, it is important to publish these results to enhance the understanding and to induce new experiments to confirm the theory presented.

In this thesis, the pseudogap and the precursor superconducting state, which are of great importance in clarifying the superconductivity mechanism in high-temperature cuprate superconductors, are investigated with a c-axis optical study in YBa2(Cu1-xZnx)3Oy. Testing was performed over a wide energy range with smaller temperature intervals for several Zn-substituted samples, as well as for several carrier-doping levels. A spectral weight (SW) analysis, in which the pseudogap behavior can be separated from the superconducting condensate with the SW transfer to the high-energy region, revealed that the pseudogap is not the precursor of the superconductivity (carriers moving to the high-energy region with pseudogap opening never contribute to the superconducting condensation). Moreover, the high-energy transfer continues even below Tc for the Zn-substituted samples (in which we weaken the superconductivity), which gives evidence to the coexistence of the pseudogap and the superconducting gap below Tc. On the other hand, the analysis of optical conductivity revealed that a precursor state to superconductivity can be defined at temperatures much higher than Tc. The superconducting carrier density (ns) was calculated for each temperature (above and below Tc) and the results confirmed the existence of ns at temperatures above Tc. The observed real superconducting condensate (ns) above Tc puts a serious constraint on the theory for high- Tc superconductivity. A theory based on an inhomogeneous superconducting state, in which a microscopically phase-separated state in a doped Mott insulator can be observed, is the most plausible candidate. This theory can explain the existence of ns and the observed temperature range for the precursor superconducting state. The results obtained show that the pseudogap coexists with superconductivity below Tc and is not the precursor of superconductivity. On the other hand, it is also possible to define a precursor superconducting state that is different than the pseudogap. The temperature range and the observed superconducting condensate in this state can be explained with the help of the inhomogeneous superconducting state.

This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of graphene quantum dots, electron-electron interaction, magnetic properties and optical properties of gated graphene nanostructures. The electronic, optical and magnetic properties of the graphene quantum dots as a function of size, shape, type of edge and carrier density are considered. Special attention is paid to the understanding of edges and the emergence of edge states for zigzag edges. Atomistic tight binding and effective mass approaches to single particle calculations are performed. Furthermore, the theoretical and numerical treatment of electron-electron interactions at the mean-field, HF, DFT and configuration-interaction level is described in detail.

The Workshop on Physics and Application of Non-crystalline Semiconductors in Optoelectronics was held from 15 to 17 October 1996 in Chisinau. republic of Moldova and was devoted to the problems of non-crystalline semiconducting materials. The reports covered two mjlin topics: theoretical basis of physics of non -crystalline materials and experimental results. In the framework of these major topics there were treated many subjects. concerning the physics of non-crystalline semiconductors and their specific application: -optical properties of non-crystalline semiconductors; -doping of glassy semiconductors and photoinduced effects in chalcogenide glasses and their application for practical purposes; -methods for investigation of the structure in non-crystalline semiconductors -new glassy materials for IR trasmittance and optoelectronics. Reports and communications were presented on various aspects of the theory. new physical principles. studies of the atomic structure. search and development of optoelectronics devices. Special attention was paid to the actual subject of photoinduced transformations and its applications. Experimental investigations covered a rather wide spectrum of materials and physical phenomena. As a novel item it is worth to mention the study of nonlinear optical effects in amorphous semiconducting films. The third order optical non linearities. fast photoinduced optical absorption and refraction. acusto-optic effects recently discovered in non-crystalline semiconductors could potentially be utilised for optical signal processing. The important problems of photoinduced structural transformations and related phenomena. which are very attractive and actual both from the scientific and practical points of view. received much attention in discussions at the conference."

For the efficient utilization of energy resources and the minimization of environmental damage, thermoelectric materials can play an important role by converting waste heat into electricity directly. Nanostructured thermoelectric materials have received much attention recently due to the potential for enhanced properties associated with size effects and quantum confinement. "Nanoscale Thermoelectrics" describes the theory underlying these phenomena, as well as various thermoelectric materials and nanostructures such as carbon nanotubes, SiGe nanowires, and graphene nanoribbons. Chapters written by leading scientists throughout the world are intended to create a fundamental bridge between thermoelectrics and nanotechnology, and to stimulate readers' interest in developing new types of thermoelectric materials and devices for power generation and other applications. "Nanoscale Thermoelectrics" is both a comprehensive introduction to the field and a guide to further research, and can be recommended for Physics, Electrical Engineering, and Materials Science departments.

This book presents posits a solution to the current limitations in global connectivity by introducing a global laser/optical communication system using constellation satellites, UAVs, HAPs and Balloons. The author outlines how this will help to satisfy the tremendous increasing demand for data exchange and information between end-users worldwide including in remote locations. The book provides both fundamentals and the advanced technology development in establishing worldwide communication and global connectivity using, (I) All-Optical technology, and (ii) Laser/Optical Communication Constellation Satellites (of different types, sizes and at different orbits), UAVs, HAPs (High Altitude Platforms) and Balloons. The book discusses step-by-step methods to develop a satellite backbone in order to interconnect a number of ground nodes clustered within a few SD-WAN (software-defined networking) in a wide area network (WAN) around the world in order to provide a fully-meshed communication network. This book pertains to anyone in optical communications, telecommunications, and system engineers, as well as technical managers in the aerospace industry and the graduate students, and researchers in academia and research laboratory. Proposed a solution to the limitations in global connectivity through a global laser/optical communication system using constellation satellites, UAVs, HAPs and Balloons; Provides both fundamentals and the advanced technology development in establishing global communication connectivity using optical technology and communication constellation satellites; Includes in-depth coverage of the basics of laser/optical communication constellation satellites.

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.

Digital Systems Design and Prototyping: Using Field Programmable Logic and Hardware Description Languages, Second Edition covers the subject of digital systems design using two important technologies: Field Programmable Logic Devices (FPLDs) and Hardware Description Languages (HDLs). These two technologies are combined to aid in the design, prototyping, and implementation of a whole range of digital systems from very simple ones replacing traditional glue logic to very complex ones customized as the applications require. Three HDLs are presented: VHDL and Verilog, the widely used standard languages, and the proprietary Altera HDL (AHDL). The chapters on these languages serve as tutorials and comparisons are made that show the strengths and weaknesses of each language. A large number of examples are used in the description of each language providing insight for the design and implementation of FPLDs. The CD-ROM included with the book contains the Altera MAX+PLUS II development environment which is ready to compile and simulate all examples. With the addition of the Altera UP-1 prototyping board, all examples can be tested and verified in a real FPLD. Digital Systems Design and Prototyping: Using Field Programmable Logic and Hardware Description Languages, Second Edition is designed as an advanced level textbook as well as a reference for the professional engineer.

This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

This book presents a comprehensive treatise on the advances in the use of light-emitting diodes (LEDs) for sustainable crop production and describes the latest photomorphogenesis research findings. It introduces readers to the fundamentals and design features of LEDs applicable for plant growth and development and illustrates their advantages over the traditional lighting systems, including cost analyses. Further, it discusses a wide range of applications covering diverse areas of plant sciences relevant to controlled environment agriculture and in vitro plant morphogenesis. The chapters have been written by a team of pioneering international experts, who have made significant contributions to this emerging interdisciplinary field. The book will serve a valuable resource for graduate students, instructors, and researchers in the fields of horticulture, agricultural biotechnology, cell and developmental biology, and precision agriculture. It will also serve well professionals engaged in greenhouse and vertical farming.

As the characteristic dimensions of electronic devices continue to shrink, the ability to characterize their electronic properties at the nanometer scale has come to be of outstanding importance. In this sense, Scanning Probe Microscopy (SPM) is becoming an indispensable tool, playing a key role in nanoscience and nanotechnology. SPM is opening new opportunities to measure semiconductor electronic properties with unprecedented spatial resolution. SPM is being successfully applied for nanoscale characterization of ferroelectric thin films. In the area of functional molecular materials it is being used as a probe to contact molecular structures in order to characterize their electrical properties, as a manipulator to assemble nanoparticles and nanotubes into simple devices, and as a tool to pattern molecular nanostructures. This book provides in-depth information on new and emerging applications of SPM to the field of materials science, namely in the areas of characterisation, device application and nanofabrication of functional materials. Starting with the general properties of functional materials the authors present an updated overview of the fundamentals of Scanning Probe Techniques and the application of SPM techniques to the characterization of specified functional materials such as piezoelectric and ferroelectric and to the fabrication of some nano electronic devices. Its uniqueness is in the combination of the fundamental nanoscale research with the progress in fabrication of realistic nanodevices. By bringing together the contribution of leading researchers from the materials science and SPM communities, relevant information is conveyed that allows researchers to learn more about the actual developments in SPM applied to functional materials. This book will contribute to the continuous education and development in the field of nanotechnology.

This book is intended for theoretical and experimental researchers who are interested in ferroelectrics and advanced memory. After introducing readers to dielectric, perovskites, advanced memories, and ferroelectric, it explains quantum simulation. Then, using molecular orbital calculation results, it explains the ferroelectric mechanism in perovskite titanium oxides in concrete terms. Lastly, the book examines the materials designed for high-performance ferroelectrics and discusses the future of high-speed memory.

This book features a systematic description of microelectronic device design ranging from the basics to current topics, such as low-power/ultralow-voltage designs including subthreshold current reduction, memory subsystem designs for modern DRAMs and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.

This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

Internet of things (IoT) is a new type of network that combines communication technology, expanded applications, and physical devices. Among them, agriculture is one of the most important areas in the application of the IoT technology, which has its unique requirements and integration features. Compared to the information technology in traditional agriculture, the agricultural IoT mainly refers to industrialized production and sustainable development under relatively controllable conditions. Agricultural IoT applies sensors, RFID, visual capture terminals and other types of sensing devices to detect and collect site information, and with broad applications in field planting, facility horticulture, livestock and poultry breeding, aquaculture and agricultural product logistics. It utilizes multiple information transmission channels such as wireless sensor networks, telecommunications networks and the internet to achieve reliable transmission of agricultural information at multiple scales and intelligently processes the acquired, massive information. The goals are to achieve (i) optimal control of agricultural production process, (ii) intelligent electronic trading of agricultural products circulation, and (iii) management of systematic logistics, quality and safety traceability. This book focuses on three levels of agricultural IoT network: information perception technology, information transmission technology and application technology.

Recent advances in semiconductor technology have made it possible to fabricate microcavity structures in which both photon fields and electron-hole pairs (or excitons) are confined in a small volume comparable to their wavelength. The radiative properties of the electron-hole pairs and excitons are modified owing to the drastic change in the structure of the electromagnetic-field modes. This book is the first to give a comprehensive account of the theory of semiconductor cavity quantum electrodynamics for such systems in the weak-coupling and strong-coupling regimes. The important concepts are presented, together with relevant, recent experimental results.

The idea for this book arose out of the realization that, although excellent surveys and a phosphor handbook are available, there is no single source covering the area of phosphate based phosphors especially for lamp industry. Moreover, as this field gets only limited attention in most general books on luminescence, there is a clear need for a book in which attention is specifically directed toward this rapidly growing field of solid state lighting and its many applications. This book is aimed at providing a sound introduction to the synthesis and optical characterization of phosphate phosphor for undergraduate and graduate students as well as teachers and researchers. The book provides guidance through the multidisciplinary field of solid state lighting specially phosphate phosphors for beginners, scientists and engineers from universities, research organizations, and especially industry. In order to make it useful for a wide audience, both fundamentals and applications are discussed, together.

Test Resource Partitioning for System-on-a-Chip is about test resource partitioning and optimization techniques for plug-and-play system-on-a-chip (SOC) test automation. Plug-and-play refers to the paradigm in which core-to-core interfaces as well as core-to-SOC logic interfaces are standardized, such that cores can be easily plugged into "virtual sockets" on the SOC design, and core tests can be plugged into the SOC during test without substantial effort on the part of the system integrator. The goal of the book is to position test resource partitioning in the context of SOC test automation, as well as to generate interest and motivate research on this important topic.

SOC integrated circuits composed of embedded cores are now commonplace. Nevertheless, There remain several roadblocks to rapid and efficient system integration. Test development is seen as a major bottleneck in SOC design, and test challenges are a major contributor to the widening gap between design capability and manufacturing capacity. Testing SOCs is especially challenging in the absence of standardized test structures, test automation tools, and test protocols.

Test Resource Partitioning for System-on-a-Chip responds to a pressing need for a structured methodology for SOC test automation. It presents new techniques for the partitioning and optimization of the three major SOC test resources: test hardware, testing time and test data volume.

Test Resource Partitioning for System-on-a-Chip paves the way for a powerful integrated framework to automate the test flow for a large number of cores in an SOC in a plug-and-play fashion. The framework presented allows the system integrator to reduce test cost and meet short time-to-market requirements.

This book describes most recent progress in the properties, synthesis, characterization, modelling, and applications of nanomaterials and nanodevices. It begins with the review of the modelling of the structural, electronic and optical properties of low dimensional and nanoscale semiconductors, methodology of synthesis, and characterization of quantum dots and nanowires, with special attention towards Dirac materials, whose electrical conduction and sensing properties far exceed those of silicon-based materials, making them strong competitors. The contributed reviews presented in this book touch on broader issues associated with the environment, as well as energy production and storage, while highlighting important achievements in materials pertinent to the fields of biology and medicine, exhibiting an outstanding confluence of basic physical science with vital human endeavor. The subjects treated in this book are attractive to the broader readership of graduate and advanced undergraduate students in physics, chemistry, biology, and medicine, as well as in electrical, chemical, biological, and mechanical engineering. Seasoned researchers and experts from the semiconductor/device industry also greatly benefit from the book's treatment of cutting-edge application studies.

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.

This book presents a comprehensive theory on glide-symmetric topological crystalline insulators. Beginning with developing a theory of topological phase transitions between a topological and trivial phase, it derives a formula for topological invariance in a glide-symmetric topological phase when inversion symmetry is added into a system. It also shows that the addition of inversion symmetry drastically simplifies the formula, providing insights into this topological phase, and proposes potential implementations. Lastly, based on the above results, the author establishes a way to design topological photonic crystals. Allowing readers to gain a comprehensive understanding of the glide-symmetric topological crystalline insulators, the book offers a way to produce such a topological phase in various physical systems, such as electronic and photonic systems, in the future.

Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described.
Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.

This classroom-tested textbook provides a self-contained one-semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson's equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate.