This book is expected to present state-of-the-art understanding of a selection of excitonic and photonic processes in useful materials from semiconductors to insulators to metal/insulator nanocomposites, both inorganic and organic. Among the featured applications are components of solar cells, detectors, light-emitting devices, scintillators and materials with novel optical properties. Excitonic properties are particularly important in organic photovoltaics and light emitting devices, as also in questions of the ultimate resolution and efficiency of new-generation scintillators for medical diagnostics, border security and nuclear non proliferation.Novel photonic and optoelectronic applications benefit from new material combinations and structures to be discussed."

"System level testing is becoming increasingly important. It is driven by the incessant march of complexity ... which is forcing us to renew our thinking on the processes and procedures that we apply to test and diagnosis of systems. In fact, the complexity defines the system itself which, for our purposes, is Aany aggregation of related elements that together form an entity of sufficient complexity for which it is impractical to treat all of the elements at the lowest level of detail . System approaches embody the partitioning of problems into smaller inter-related subsystems that will be solved together. Thus, words like hierarchical, dependence, inference, model, and partitioning are frequent throughout this text. Each of the authors deals with the complexity issue in a similar fashion, but the real value in a collected work such as this is in the subtle differences that may lead to synthesized approaches that allow even more progress. The works included in this volume are an outgrowth of the 2nd International Workshop on System Test and Diagnosis held in Alexandria, Virginia in April 1998. The first such workshop was held in Freiburg, Germany, six years earlier. In the current workshop nearly 50 experts from around the world struggled over issues concerning the subject... In this volume, a select group of workshop participants was invited to provide a chapter that expanded their workshop presentations and incorporated their workshop interactions... While we have attempted to present the work as one volume and requested some revision to the work, the content of the individual chapters was not edited significantly. Consequently, you will see different approaches to solving the sameproblems and occasional disagreement between authors as to definitions or the importance of factors. ... The works collected in this volume represent the state-of-the-art in system test and diagnosis, and the authors are at the leading edge of that science...." From the Preface

Density functional theory (DFT) has become the standard workhorse for quantum mechanical simulations as it offers a good compromise between accuracy and computational cost.
However, there are many important systems for which DFT performs very poorly, most notably strongly-correlated materials, resulting in a significant recent growth in interest in 'beyond DFT' methods. The widely used DFT+U technique, in particular, involves the addition of explicit Coulomb repulsion terms to reproduce the physics of spatially-localised electronic subspaces.
The magnitude of these corrective terms, measured by the famous Hubbard U parameter, has received much attention but less so for the projections used to delineate these subspaces.
The dependence on the choice of these projections is studied in detail here and a method to overcome this ambiguity in DFT+U, by self-consistently determining the projections, is introduced.
The author shows how nonorthogonal representations for electronic states may be used to construct these projections and, furthermore, how DFT+U may be implemented with a linearly increasing cost with respect to system size.
The use of nonorthogonal functions in the context of electronic structure calculations is extensively discussed and clarified, with new interpretations and results, and, on this topic, this work may serve as a reference for future workers in the field."

This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.

Testing Static Random Access Memories covers testing of one of the important semiconductor memories types; it addresses testing of static random access memories (SRAMs), both single-port and multi-port. It contributes to the technical acknowledge needed by those involved in memory testing, engineers and researchers. The book begins with outlining the most popular SRAMs architectures. Then, the description of realistic fault models, based on defect injection and SPICE simulation, are introduced. Thereafter, high quality and low cost test patterns, as well as test strategies for single-port, two-port and any p-port SRAMs are presented, together with some preliminary test results showing the importance of the new tests in reducing DPM level. The impact of the port restrictions (e.g., read-only ports) on the fault models, tests, and test strategies is also discussed.
Features:
-Fault primitive based analysis of memory faults,
-A complete framework of and classification memory faults,
-A systematic way to develop optimal and high quality memory test algorithms,
-A systematic way to develop test patterns for any multi-port SRAM,
-Challenges and trends in embedded memory testing.

examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs."

This book first provides a comprehensive coverage of state-of-the-art validation solutions based on real-time signal tracing to guarantee the correctness of VLSI circuits. The authors discuss several key challenges in post-silicon validation and provide automated solutions that are systematic and cost-effective. A series of automatic tracing solutions and innovative design for debug (DfD) techniques are described, including techniques for trace signal selection for enhancing visibility of functional errors, a multiplexed signal tracing strategy for improving functional error detection, a tracing solution for debugging electrical errors, an interconnection fabric for increasing data bandwidth and supporting multi-core debug, an interconnection fabric design and optimization technique to increase transfer flexibility and a DfD design and associated tracing solution for improving debug efficiency and expanding tracing window. The solutions presented in this book improve the validation quality of VLSI circuits, and ultimately enable the design and fabrication of reliable electronic devices.

The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

Advances in the synthesis of new materials with often complex, nano-scaled structures require increasingly sophisticated experimental techniques that can probe the electronic states, the atomic magnetic moments and the magnetic microstructures responsible for the properties of these materials.

At the same time, progress in synchrotron radiation techniques has ensured that these light sources remain a key tool of investigation, e.g. synchrotron radiation sources of the third generation are able to support magnetic imaging on a sub-micrometer scale.

With the Sixth Mittelwihr School on Magnetism and Synchrotron Radiation the tradition of teaching the state-of-the-art on modern research developments continues and is expressed through the present set of extensive lectures provided in this volume. While primarily aimed at postgraduate students and newcomers to the field, this volume will also benefit researchers and lecturers actively working in the field.

Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction."

This book focuses on the essential scientific ideas and breakthroughs in the last three decades for organic solar cells that have realized practical applications. The motivation for publishing this book is to explain how those essential ideas have arisen and to provide a foundation for future progress by target readers-students, novices in the field, and scientists with expertise. The main topics covered in the book include the fundamental principles and history of organic solar cells, blended junction, nanostructure control, photocurrent generation, photovoltage generation, doping, practical organic solar cells, and possible ideas for the future. The editors enthusiastically anticipate the vigorous development of the field of organic solar cells by young scientists of the next generation.

Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. "Handbook of Transparent Conductors" presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.

System-Level Design Techniques for Energy-Efficient Embedded Systems addresses the development and validation of co-synthesis techniques that allow an effective design of embedded systems with low energy dissipation. The book provides an overview of a system-level co-design flow, illustrating through examples how system performance is influenced at various steps of the flow including allocation, mapping, and scheduling. The book places special emphasis upon system-level co-synthesis techniques for architectures that contain voltage scalable processors, which can dynamically trade off between computational performance and power consumption. Throughout the book, the introduced co-synthesis techniques, which target both single-mode systems and emerging multi-mode applications, are applied to numerous benchmarks and real-life examples including a realistic smart phone.

This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.

The ELFNET Book on Failure Mechanisms, Testing Methods, and Quality Issues of Lead-Free Solder Interconnects is the work of the European network ELFNET which was founded by the European Commission in the 6th Framework Programme. It brings together contributions from the leading European experts in lead-free soldering. The limited validity of testing methods originating from tin-lead solder was a major point of concern in ELFNET members' discussions. As a result, the network's reliability group decided to bring together the material properties of lead-free solders, as well as the basics of material science, and to discuss their influence on the procedures for accelerated testing. This has led to a matrix of failure mechanisms and their activation and, as a result, to a comprehensive coverage of the scientific background and its applications in reliability testing of lead-free solder joints. The ELFNET Book on Failure Mechanisms, Testing Methods, and Quality Issues of Lead-Free Solder Interconnects is written for scientists, engineers and researchers involved with lead-free electronics.

The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

The present book provides recent developments in various in vivo imaging and sensing techniques such as photo acoustics (PA) imaging and microscopy, ultrasound-PA combined modalities, optical coherence tomography (OCT) and micro OCT, Raman and surface enhanced Raman scattering (SERS), Fluorescence lifetime imaging (FLI) techniques and nanoparticle enabled endoscopy etc. There is also a contributing chapter from leading medical instrumentation company on their view of optical imaging techniques in clinical laparoscopic surgery. The UN proclaimed 2015 as the International Year of Light and Light-based Technologies, emphasizing achievements in the optical sciences and their importance to human beings. In this context, this book focusses on the recent advances in biophotonics techniques primarily focused towards translational medicine contributed by thought leaders who have made cutting edge developments in various photonics techniques.

Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications will enable readers to gain an insight into this extremely important area of electronic materials activity. Specialists in the field will benefit from its wide-ranging and topical coverage of the subject. At the same time, each of the chapters covers the basic principles associated with the topic concerned and includes references for further study and so will be suitable for advanced graduate courses. Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications is organised in three main sections. The first covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the exciting new area of low dimensional solids and the novel concepts which arise from them. The second section discusses the properties of the materials which make them useful in optical, transport, doping, defects, diffusion and structural applications, and the interfacial and surface effects. In addition, there is a separate chapter on dilute magnetic semiconductors and their unique and fascinating properties. Finally, there is a devices section which encompasses the major fields of infrared detection and emission, by several device types, and the expanding areas of solar cell production and room temperature detection of X-rays and gamma-rays.

Microcantilevers for Atomic Force Microscope Data Storage describes a research collaboration between IBM Almaden and Stanford University in which a new mass data storage technology was evaluated. This technology is based on the use of heated cantilevers to form submicron indentations on a polycarbonate surface, and piezoresistive cantilevers to read those indentations. Microcantilevers for Atomic Force Microscope Data Storage describes how silicon micromachined cantilevers can be used for high-density topographic data storage on a simple substrate such as polycarbonate. The cantilevers can be made to incorporate resistive heaters (for thermal writing) or piezoresistive deflection sensors (for data readback). The primary audience for Microcantilevers for Atomic Force Microscope Data Storage is industrial and academic workers in the microelectromechanical systems (MEMS) area. It will also be of interest to researchers in the data storage industry who are investigating future storage technologies.

This book is devoted to logic synthesis and design techniques for asynchronous circuits. It uses the mathematical theory of Petri Nets and asynchronous automata to develop practical algorithms implemented in a public domain CAD tool. Asynchronous circuits have so far been designed mostly by hand, and are thus much less common than their synchronous counterparts, which have enjoyed a high level of design automation since the mid-1970s. Asynchronous circuits, on the other hand, can be very useful to tackle clock distribution, modularity, power dissipation and electro-magnetic interference in digital integrated circuits. This book provides the foundation needed for CAD-assisted design of such circuits, and can also be used as the basis for a graduate course on logic design.

For emerging energy saving technologies superconducting materials with superior performance are needed. Such materials can be developed by manipulating the "elementary building blocks" through nanostructuring. For superconductivity the "elementary blocks" are Cooper pair and fluxon (vortex). This book presents new ways how to modify superconductivity and vortex matter through nanostructuring and the use of nanoscale magnetic templates. The basic nano-effects, vortex and vortex-antivortex patterns, vortex dynamics, Josephson phenomena, critical currents, and interplay between superconductivity and ferromagnetism at the nanoscale are discussed. Potential applications of nanostructured superconductors are also presented in the book.

In this thesis, the author has developed a high-resolution spin-resolved photoemission spectrometer that achieves the world-best energy resolution of 8 meV. The author has designed a new, highly efficient mini Mott detector that has a large electron acceptance angle and an atomically flat gold target to enhance the efficiency of detecting scattered electrons.

The author measured the electron and spin structure of Bi thin film grown on a Si(111) surface to study the Rashba effect. Unlike the conventional Rashba splitting, an asymmetric in-plane spin polarization and a tremendous out-of-plane spin component were observed. Moreover, the author found that the spin polarization of Rashba surface states is reduced by decreasing the film thickness, which indicates the considerable interaction of Rashba spin-split states between the surface and Bi/Si interface.