Circuit simulation is widely used for the design of circuits, both discrete and integrated. Device modeling is an impor tant aspect of circuit simulation since it is the link between the physical device and the sim ulate d device. Curren tly available circuit simulation programs provide a variety of built-in models. Many circuit designers use these built-in models whereas some incorporate new models in the circuit sim ulation programs. Understanding device modeling with particular emphasis on circuit simulation will be helpful in utilizing the built-in models more efficiently as well as in implementing new models. SPICE is used as a vehicle since it is the most widely used circuit sim ulation program. How ever, some issues are addressed which are not directly appli cable to SPICE but are applicable to circuit simulation in general. These discussions are useful for modifying SPICE and for understanding other simulation programs. The gen eric version 2G. 6 is used as a reference for SPICE, although numerous different versions exist with different modifications. This book describes field effect transistor models commonly used in a variety of circuit sim ulation pro grams. Understanding of the basic device physics and some familiarity with device modeling is assumed. Derivation of the model equations is not included. ( SPICE is a circuit sim ulation program available from EECS Industrial Support Office, 461 Cory Hall, University of Cali fornia, Berkeley, CA 94720. ) Acknowledgements I wish to express my gratitude to Valid Logic Systems, Inc."

High-Temperature Cuprate Superconductors provides an up-to-date and comprehensive review of the properties of these fascinating materials. The essential properties of high-temperature cuprate superconductors are reviewed on the background of their theoretical interpretation. The experimental results for structural, magnetic, thermal, electric, optical and lattice properties of various cuprate superconductors are presented with respect to relevant theoretical models. A critical comparison of various theoretical models involving strong electron correlations, antiferromagnetic spin fluctuations, phonons and excitons provides a background for understanding of the mechanism of high-temperature superconductivity. Recent achievements in their applications are also reviewed. A large number of illustrations and tables gives valuable information for specialists. A text-book level presentation with formulation of a general theory of strong-coupling superconductivity will help students and researches to consolidate their knowledge of this remarkable class of materials.

-Shear-Induced Transitions and Instabilities in Surfactant Wormlike Micelles By S. Lerouge, J.-F. Berret -Laser-Interferometric Creep Rate Spectroscopy of Polymers By V. A. Bershtein, P. N. Yakushev -Polymer Nanocomposites for Electro-Optics: Perspectives on Processing Technologies, Material Characterization, and Future Application K. Matras-Postolek, D. Bogdal

PART I: sets the stage, provides context, reviews some of the prerequisite topics and gives a taste of what is to come in the rest of the book. Included are two refresher-type chapters on digital circuits and components, a discussion of types of computer systems, an overview of digital computer technology, and a detailed perspective on computer system 3erformance. PART II:lays out the user's interface to computer hardware known as the instruction-set architechture (ISA). For better understanding, the instruction set of MiniMIPS (a simplified, yet very realistic, machine for which open reference material and simulation tools exist) is described. Included is a chapter on variations in ISA (e.g. RISC vs CISC) and associated cost performace tradeoffs. The next two parts cover the central processing unit (CPU). PART III: describes the structure of arithmetic/logic units (ALUs) in some detail. Included are discussions of fixed- and floating-point number representations, design of high-speed adders, shift and logical operations, and hardware multipliers/dividers. Implementation aspects and pitfalls of floating-point arthimetic are also discussed. PART IV: is devoted to data path and control circuits comprising the CPU. Beginning with instruction execution steps, the needed components and control mechanisms are derived. These are followed by an exposition of control design strategies, use of a pipelined data path for performance enhancement, and various limitations of pipelining due to data and control dependencies. PART V: concerned with the memory system. The technologies in use for primary and secondary memories are described, along with their strengths and limitations. It is shown how the use of cache memories effectively bridges the speed gap between CPU and main memory. Similarly, the use of virtual memory to provide the illusion of a vast main memory is explained. PART VI: deals with input/output and interfacing topics. A discussion of I/O device technologies is followed by methods of I/O programming and the roles of buses and links (including standards) in I/O communication and interfacing. Elements of processes and context switching, for exception handling or multireaded computation, are also covered. PART VII: introduces advanced architectures. An overview of performance enhancement strategies, beyond simple pipelining, is presented and examples of applications requiring higher performance are cited. These are followed by design strategies and example architectures based on vector or array proccessing, multiprocessing, and multicomputing.

This volume provides a complete understanding of the fundamental causes of routing congestion in present-day and next-generation VLSI circuits, offers techniques for estimating and relieving congestion, and provides a critical analysis of the accuracy and effectiveness of these techniques. The book includes metrics and optimization techniques for routing congestion at various stages of the VLSI design flow. The subjects covered include an explanation of why the problem of congestion is important and how it will trend, plus definitions of metrics that are appropriate for measuring congestion, and descriptions of techniques for estimating and optimizing routing congestion issues in cell-/library-based VLSI circuits.

Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

In 1987 a major breakthrough occurred in materials science. A new family of materials was discovered that became superconducting above the temperature at which nitrogen gas liquifies, namely, 77 K or -196 DegreesC. Within months of the discovery, a wide variety of experimental techniques were brought to bear in order to measure the properties of these materials and to gain an understanding of why they superconduct at such high temperatures. Among the techniques used were electromagnetic absorption in both the normal and the superconducting states. The measurements enabled the determination of a wide variety of properties, and in some instances led to the observation of new effects not seen by other measu- ments, such as the existence of weak-link microwave absorption at low dc magnetic fields. The number of different properties and the degree of detail that can be obtained from magnetic field- and temperature-dependent studies of electromagnetic abso- tion are not widely appreciated. For example, these measurements can provide information on the band gap, critical fields, the H-T irreversibility line, the amount of trapped flux, and even information about the symmetry of the wave function of the Cooper pairs. It is possible to use low dc magnetic field-induced absorption of microwaves with derivative detection to verify the presence of superconductivity in a matter of minutes, and the measurements are often more straightforward than others. For example, they do not require the physical contact with the sample that is necessary when using four-probe resistivity to detect superconductivity.

Nanoimprint Lithography: An enabling process for nanofabrication presents a comprehensive description of nanotechnology that is one of the most promising low-cost, high-throughput technologies for manufacturing nanostructures, and an emerging lithography candidates for 22, 16 and 11 nm nodes. It provides the exciting, multidisciplinary field, offering a wide range of topics covering: principles, process, material and application. This book would be of specific interest for researchers and graduate students in the field of nanoscience, nanotechnology and nanofabrication, material, physical, chemical, electric engineering and biology. Dr. Weimin Zhou is an associate professor at Shanghai Nanotechnology Promotion Center, China.

This book gives an introduction to nanostructured materials and guides the reader through their different engineering applications. It addresses the special phenomena and potentials involved in the applications without going into too much scientific detail of the physics and chemistry involved, which makes the reading interesting for beginners in the field. Materials for different applications in engineering are described, such as those used in opto-electronics, energy, tribology, bio-applications, catalysis, reinforcement and many more. In each application chapter, the reader will learn about the phenomena involved in the application, the nanostructured materials used in the field and their processing, besides finding some practical examples of their use in laboratories and in industry.The clear language and the application-oriented perspective of the book makes it suitable for both engineers and students who want to learn about applications of nanostructured materials in Engineering.

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures-including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials-this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

"Molecular Modeling and Multiscaling Issues for Electronic Material Applications" provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications. Part I presents the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue. Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example of the use of quasi-continuum methods that are being used to address multiscaling issues. Part III is a more specific look at molecular dynamics in the determination of the thermal conductivity of carbon-nanotubes. Part IV covers the many aspects of molecular modeling needed to understand the relationship between the molecular structure and mechanical performance of materials. Finally, Part V discusses the transitional topic of multiscale modeling and recent developments to reach the submicronscale using mesoscale models, including examples of direct scaling and parameterization from the atomistic to the coarse-grained particle level.
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This book is concerned with polymeric hydrogels, which are considered as one of the most promising types of new polymer-based materials. Each chapter in this book describes a selected class of polymeric hydrogels, such as superabsorbent hybrid nanohydrogels, conducting polymer hydrogels, polysaccharide-based or protein-based hydrogels, or gels based on synthetic polymers. In this way, the book also addresses some of the fascinating properties and applications of polymeric hydrogels: they are three-dimensional, hydrophilic, polymeric networks that can absorb, swell and retain large quantities of water or aqueous fluids. In combination with metal nanoparticles, nanofibrils or nanowhiskers, which may be embedded in the gels, they find widespread applications, ranging from agriculture, and waste water treatment, over electronics, to pharmaceutical and biomedical applications. Applications mentioned in this book include electro sensors, capacitors, electromechanical actuators, and even artificial muscles.

Reviewing the development of optical fibre lasers and amplifiers over the past few years, this book is a compilation of chapters written by several contributors. Chapter 1 presents an overview and an historical introduction to the field. Chapter 2 is theoretical and introduces the concepts of energy levels and of lasing. Chapter 3 then discusses the fabrication of rare-earth doped optical fibres whilst chapter 4 covers the spectroscopy of rare-earth dopants in these fibres. Chapter 5 emphasizes the practical aspects of the laser amplifier. Chapter 6 moves on to the operation of erbium amplifiers in optical systems and a comparison is made here with other alternatives amplifying devices. Chapter 7 reviews work on fibre laser oscillators made in silica fibre, while chapter 8 covers similar work using fluoride glass fibres, an alternative glass host. Chapter 9 describes Q-switching and mode-locking in fibre lasers, and finally chapter 10 examines future prospects for these devices and discusses potential developments such as distributed fibre amplifiers, soliton propagation and the general use of fibre lasers in optical sensors.

Covers the statistical analysis and optimization issues arising due to increased process variations in current technologies.

Comprises a valuable reference for statistical analysis and optimization techniques in current and future VLSI design for CAD-Tool developers and for researchers interested in starting work in this very active area of research.

Written by author who lead much research in this area who provide novel ideas and approaches to handle the addressed issues

This book presents written versions of selected invited lectures from the spring meeting of the Arbeitskreis Festkorperphysik of the Deutsche Physikalische Gesellschaft which was held from 27 to 31 March 2006 in Dresden, Germany. Many topical talks given at the numerous symposia are included. Most of these were organized collaboratively by several of the divisions of the Arbeitskreis. The book presents, to some extent, the status of the field of solid-state physics in 2006 not only in Germany but also internationally.

The book develops a comprehensive understanding of the surface impedance of the oxide high-temperature superconductors in comparison with the conventional superconductor Nb3Sn. Linear and nonlinear microwave responses are treated separately, both in terms of models, theories or numerical approaches and in terms of experimental results. The theoretical treatment connects fundamental aspects of superconductivity to the specific high-frequency properties. The experimental data review the state of the art, as reported by many international groups. The book describes further the main features of appropriate preparation, handling, mounting, and refrigeration techniques, and finally discusses possible applications in passive and active microwave devices.

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place.Drawing on the author's wide range of experience in plasma science, processing technologies, device physics and reliability physics, the text includes information on: - plasma and mechanisms of plasma damage;- wear-out and breakdown of thin gate-oxides;- the impact of processing equipment on damage;- methods of damage measurement;- damage management; - gate-oxide scaling.

We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible."

Traditionally, Computer Aided Design (CAD) tools have been used to create the nominal design of an integrated circuit (IC), such that the circuit nominal response meets the desired performance specifications. In reality, however, due to the disturbances ofthe IC manufacturing process, the actual performancesof the mass produced chips are different than those for the nominal design. Even if the manufacturing process were tightly controlled, so that there were little variations across the chips manufactured, the environmentalchanges (e. g. those oftemperature, supply voltages, etc. ) would alsomakethe circuit performances vary during the circuit life span. Process-related performance variations may lead to low manufacturing yield, and unacceptable product quality. For these reasons, statistical circuit design techniques are required to design the circuit parameters, taking the statistical process variations into account. This book deals with some theoretical and practical aspects of IC statistical design, and emphasizes how they differ from those for discrete circuits. It de scribes a spectrum of different statistical design problems, such as parametric yield optimization, generalized on-target design, variability minimization, per formance tunning, and worst-case design. The main emphasis of the presen tation is placed on the principles and practical solutions for performance vari ability minimization. It is hoped that the book may serve as an introductory reference material for various groups of IC designers, and the methodologies described will help them enhance the circuit quality and manufacturability. The book containsseven chapters."

Physical properties and models of electronic structure are analyzed for a new class of high-TC superconductors which belong to iron-based layered compounds. Despite their variable chemical composition and differences in the crystal structure, these compounds possess similar physical characteristics, due to electron carriers in the FeAs layers and the interaction of these carriers with fluctuations of the magnetic order. A tremendous interest towards these materials is explained by the prospects of their practical use. In this monograph, a full picture of the formation of physical properties of these materials, in the context of existing theory models and electron structure studies, is given. The book is aimed at a broad circle of readers: physicists who study electronic properties of the FeAs compounds, chemists who synthesize them and specialists in the field of electronic structure calculations in solids. It is helpful not only to researchers active in the fields of superconductivity and magnetism, but also for graduate and postgraduate students and all those who would like to get acquaintained with this vivid area of the materials science.

This book covers the theoretical background, experimental methods and implementation details to engineer for communication and imaging application, terahertz devices using metamaterials, in mainstream semiconductor foundry processes. This book will provide engineers and physicists an authoritative reference to construct such devices with minimal background. The authors describe the design and construction of electromagnetic (EM) devices for terahertz frequencies (108-1010 cycles/sec) using artificial materials that are a fraction of the wavelength of the incident EM wave, resulting in an effective electric and magnetic properties (permittivity and permeability) that are unavailable in natural materials.

Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior."

Edited by key figures in 3D integration and written by top authors from high-tech companies and renowned research institutions, this book covers the intricate details of 3D process technology. As such, the main focus is on silicon via formation, bonding and debonding, thinning, via reveal and backside processing, both from a technological and a materials science perspective. The last part of the book is concerned with assessing and enhancing the reliability of the 3D integrated devices, which is a prerequisite for the large-scale implementation of this emerging technology. Invaluable reading for materials scientists, semiconductor physicists, and those working in the semiconductor industry, as well as IT and electrical engineers.

Low-Grade Thermal Energy Harvesting: Advances in Thermoelectrics, Materials, and Emerging Applications provides readers with fundamental and key concepts surrounding low-grade thermal energy conversion while also reviewing the latest research directions. The book covers the most promising and emerging technologies for low-grade heat recovery, harvesting and conversion, including wearable thermoelectrics and organic thermoelectrics. Each chapter includes key materials, principles, design and fabrication strategies for low-grade heat recovery. Special attention on emerging materials such as organic composites, 2D materials and nanomaterials are also included. The book emphasizes materials and device structures that enable the powering of wearable electronics and consumer electronics. The book is suitable for materials scientists and engineers in academia and R&D in manufacturing, industry, energy and electronics.