This book describes the characterization of liquid crystal materials at microwave frequencies and the usage of these materials in reconfigurable planar antennas and in their electrical tunable components. It reports for the first time the realization of a two-dimensional electronic beam steering antenna and polarization agile planar antennas with liquid crystal display technology. It gives a detailed description of all the theoretical analyses, modeling and design methods that were involved in the realization of these devices as well as their validation using measurement of demonstrative prototypes. This book also shows that low profile, low cost, high gain, electronic beam steering and polarization agile antennas can be fabricated in larger sizes by using existing automated liquid crystal display manufacturing techniques. The innovative ideas and method described in this work represent a considerable advancement in the field of electronically reconfigurable antennas based on liquid crystal technology and are expected to draw significant interest in the future. Such antennas may become important, for example, in mobile terminals integrated into the body of laptops (in the cover) or of automobiles (in the rooftop), ships or boats, for which flat, low-profile and low-cost antennas are required.

This seriesofbooks, which is publishedattherateofaboutoneper year, addresses fundamental problems in materialsscience.Thecontents coverabroadrangeoftopicsfromsmallclustersofatomstoengineering materials and involve chemistry, physics, materials science, and engineering,withlengthscalesrangingfromAngstromsuptomillimeters. Theemphasis is on basic scienceratherthan on applications. Each book focuses on a single areaofcurrent interest and brings together leading experts to give an up-to-date discussion oftheir work and the workof others. Each articlecontainsenough references thattheinterestedreader can access the relevant literature. Thanks are given to the Center for Fundamental Materials Research at Michigan State University for supportingthisseries. M.F.Thorpe,SeriesEditor E-mail:[email protected] EastLansing,Michigan,November2002 v PREFACE ThisvolumerecordsinvitedlecturesgivenattheNewThermoelectric(TE)Materials Workshopheld inTraverseCity,MichiganfromAugust17-21,2002.Thethemeofthe workshop was Chemistry, PhysicsandMaterials ScienceofThermoelectric Materials: Beyond Bismuth Telluride. The objective of this symposium was threefold. First, to examine and assess the ability of solid state chemistry to produce new generation materials for TE applications. Second, to rationalize and predict the charge and heat transportpropertiesofpotentialcandidatesandhypotheticalsystemsthroughsolidstate theoryandexperiment.Third,toidentifyandprioritizeresearchneededtoreachvarious levelsofrequirementsintermsofZTandtemperature.Theseobjectiveswereaddressed by a series of invited talks and discussions by leading experts from academia, governmentlaboratories,andindustry. Thereweretwenty-twoinvitedandeightposterpresentations inthe workshop.Out ofthese,sixteeninvitedpresentationsarerepresentedinthisvolume.Theycoverawide range of subjects, starting from synthesis (based on different strategies) and characterizationofnovel materials to acareful studyoftheir transport properties and electronicstructure.Topicsaddressingtheissueofmakingnew materialsare: synthetic search for new materials (di Salvo et aI.) and synthetic strategies based on phase homologies (Kanatzidis). The different classes of materials covered are: bismuth nanowires (Dresselhausetal.), unconventional high-temperaturethermoelectrics, boron carbides (Aselage et aI.) , layered cobalt oxides (Fujii et aI.), early transition metal antimonides(KleinkeetaI.),skutterudites(Uher),andclathratethermoelectrics(Nolas).

Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.

This book covers different aspects of the physics of iron-based superconductors ranging from the theoretical, the numerical and computational to the experimental ones. It starts from the basic theory modeling many-body physics in Fe-superconductors and other multi-orbital materials and reaches up to the magnetic and Cooper pair fluctuations and nematic order. Finally, it offers a comprehensive overview of the most recent advancements in the experimental investigations of iron based superconductors.

The Physical Electronics Department of SRI International (formerly Stanford Research Institute) has been pioneering the development of devices fabricated to submicron tolerances for well over 20 years. In 1961, a landmark paper on electron-beam lithography and its associated technologies was published by K. R. Shoulderst (then at SRI), which set the stage for our subsequent efforts in this field. He had the foresight to believe that the building of such small devices was actually within the range of human capabilities. As a result of this initial momentum, our experience in the technologies associated with microfabrication has become remarkably comprehensive, despite the relatively small size of our research activity. We have frequently been asked to deliver seminars or provide reviews on various aspects of micro fabrication. These activities made us aware of the need for a comprehensive overview of the physics of microfabrication. We hope that this book will fill that need."

This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.

This book analyses different A/D-converter architectures with an emphasis on the maximum achievable power efficiency. It also provides an accessible overview of the state-of-the art in calibration techniques for Nyquist A/D converters. The calibration techniques presented are applicable to other analog-to-digital systems, such as those applied in integrated receivers. They allow implementation without introducing a speed or power penalty.

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy."

The book presents the modeling and control of hydrogen-air PEM fuel cells, including simultaneous estimation of the parameters and states, fuzzy cluster modeling, SPM-based predictive control and advanced fuzzy control. MATLAB/Simulink-based modeling and control programs are discussed in detail. With simulations and experiments, it is an essential reference for both scientists and industrial engineers.

Testing techniques for VLSI circuits are undergoing many exciting changes. The predominant method for testing digital circuits consists of applying a set of input stimuli to the IC and monitoring the logic levels at primary outputs. If, for one or more inputs, there is a discrepancy between the observed output and the expected output then the IC is declared to be defective. A new approach to testing digital circuits, which has come to be known as IDDQ testing, has been actively researched for the last fifteen years. In IDDQ testing, the steady state supply current, rather than the logic levels at the primary outputs, is monitored. Years of research suggests that IDDQ testing can significantly improve the quality and reliability of fabricated circuits. This has prompted many semiconductor manufacturers to adopt this testing technique, among them Philips Semiconductors, Ford Microelectronics, Intel, Texas Instruments, LSI Logic, Hewlett-Packard, SUN microsystems, Alcatel, and SGS Thomson. This increase in the use of IDDQ testing should be of interest to three groups of individuals associated with the IC business: Product Managers and Test Engineers, CAD Tool Vendors and Circuit Designers. Introduction to IDDQ Testing is designed to educate this community. The authors have summarized in one volume the main findings of more than fifteen years of research in this area.

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

The last decade has witnessed the discovery of, and dramatic progress in understanding the physics of graphene and related two-dimensional materials. The development of methods for manufacturing and aligning high-quality two-dimensional crystals has facilitated the creation of a new generation of materials: the heterostructures of graphene with hexagonal crystals, in which the graphene electrons acquire new, qualitatively different properties. This thesis provides a comprehensive theoretical framework in which to understand these heterostructures, based on the tight binding model, perturbation theory, group theory and the concept of the moire superlattice (all of which are elucidated). It explains how graphene heterostructures provide new opportunities for tailoring band structure, such as creating additional Dirac points or opening band gaps and how they manifest themselves in transport measurements, optical absorption spectra and the fractal Hofstadter spectra. Also considered are the heterostructures of bilayer graphene and resonant tunneling in aligned graphene/insulator/graphene devices.

Microcontrollers exist in a wide variety of models with varying structures and numerous application opportunities. Despite this diversity, it is possible to find consistencies in the architecture of most microcontrollers. Microcontrollers: Fundamentals and Applications with PIC focuses on these common elements to describe the fundamentals of microcontroller design and programming. Using clear, concise language and a top-bottom approach, the book describes the parts that make up a microcontroller, how they work, and how they interact with each other. It also explains how to program medium-end PICs using assembler language. Examines analog as well as digital signals This volume describes the structure and resources of general microcontrollers as well as PIC microcontrollers, with a special focus on medium-end devices. The authors discuss memory organization and structure, and the assembler language used for programming medium-end PIC microcontrollers. They also explore how microcontrollers can acquire, process, and generate digital signals, explaining available techniques to deal with parallel input or output, peripherals, resources for real-time use, interrupts, and the specific characteristics of serial data interfaces in PIC microcontrollers. Finally, the book describes the acquisition and generation of analog signals either using resources inside the chip or by connecting peripheral circuits. Provides hands-on clarification Using practical examples and applications to supplement each topic, this volume provides the tools to thoroughly grasp the architecture and programming of microcontrollers. It avoids overly specific details so readers are quickly led toward design implementation. After mastering the material in this text, they will understand how to efficiently use PIC microcontrollers in a design process.

Nowadays information technology is based on semiconductor and ferromagnetic materials. Information processing and computation are based on electron charge in semiconductor transistors and integrated circuits, and information is stored on magnetic high-density hard disks based on the physics of the electron spins. Recently, a new branch of physics and nanotechnology, called magneto-electronics, spintronics, or spin electronics, has emerged, which aims at simultaneously exploiting both the charge and the spin of electrons in the same device. A broader goal is to develop new functionality that does not exist separately in a ferromagnet or a semiconductor. The aim of this book is to present new directions in the development of spin electronics in both the basic physics and the technology which will become the foundation of future electronics.

This book will present the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronc semiconductor devices. The book chapters will be authored primarily by the physics, applied physics and electrical engineering professors and students who worked for 5 years under the Polarization Effects in Semiconductors DOD funded Multi Disciplinary University Research Initiative. The book will cover ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, and GaN/AlGaN GaAlN/AlGaInN and other nitride, and SiC hetero-structures; graded structures for distributed piezo-electric charge, electrical and electronic characterization of polarization charge and charge distribution by scanning-probe spectroscopies, gauge factors and strain effects.It also covers: polarization in extended defects and device effects; Piezo-electric strain/charge engineering and application to device design and processing: ohmic, and Shottky diodes, drift, diffusion, low and high field carrier dynamics in plane and normal to thin film and polarization engineered semiconductor hetero-structures. Polarization inclusion and utilization in design of sensors, microwave, low noise, and optoelectronic devices (HEMT, HBT, LED, Laser acoustic, chemical, optical and biological sensors) is also covered.

The Verilog Hardware Description Language was first introduced in 1984. Over the 20 year history of Verilog, every Verilog engineer has developed his own personal "bag of tricks" for coding with Verilog. These tricks enable modeling or verifying designs more easily and more accurately. Developing this bag of tricks is often based on years of trial and error. Through experience, engineers learn that one specific coding style works best in some circumstances, while in another situation, a different coding style is best. As with any high-level language, Verilog often provides engineers several ways to accomplish a specific task. Wouldn't it be wonderful if an engineer first learning Verilog could start with another engineer's bag of tricks, without having to go through years of trial and error to decide which style is best for which circumstance? That is where this book becomes an invaluable resource. The book presents dozens of Verilog tricks of the trade on how to best use the Verilog HDL for modeling designs at various level of abstraction, and for writing test benches to verify designs. The book not only shows the correct ways of using Verilog for different situations, it also presents alternate styles, and discusses the pros and cons of these styles.

Quantitative Atomic-Resolution Electron Microscopy, Volume 217, the latest release in the Advances in Imaging and Electron Physics series merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods. Chapters in this release include Statistical parameter estimation theory, Efficient fitting algorithm, Statistics-based atom counting , Atom column detection, Optimal experiment design for nanoparticle atom-counting from ADF STEM images, and more.

The Landolt-Bornstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a "Systematics of Semiconductor Properties," which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make the electronic version an easy-to-use source of semiconductor data. In the new updates III/44A and III/44B, links to existing material in III/41 or to related documents for a specific substance are also included.

In the last few decades the effect of lead contamination on human health has received significant attention. Based on such concerns elimination of lead from ceramic glaze, paint, plumbing etc. has been legislated and implemented. However, till recently, solders used in electronics, remained lead-based. The worldwide multi-faceted research efforts to arrive at suitable solutions, especially as the deadline for implementation of lead-free electronic solders approaches, have resulted in an exhaustive number of research papers in several reviewed scientific journals. Similarly there have been presentations in several national and international meetings of various technical societies. It is impossible for any researcher or student to be aware of all the materials that have been, and are being, published in these many different sources, so it becomes essential to have most of the relevant and currently available information presented in a single publication. electronic solder area were identified, and researchers recognized for their significant scientific contributions in those areas were invited to write articles on those topics. They were asked to address the importance of a given issue, the current status of understanding and available solutions, the problems that still need to be tackled and suggestions for potential approaches to do so. The chapters are organized around the following subject areas: thermodynamics and phase diagrams, solder developments, processing issues, mechanical property considerations, effects of thermal excursions (TMF), electromigraion, whisker growth, tin pest, and industrial perspectives (consumer electronics, and high-end high reliability applications). This material originally appeared in a special issue of Journal of Materials Science: Materials in Electronics. for academic researchers in fields other than Materials Science and those in industry, and to provide wider awareness of the current status of lead-free electronic solders to those persons active in the area but who are not regular readers of the Journal, these articles are being reprinted in book form.

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

This book addresses the development of electronic devices using redox-active organic molecules and their porous coordination networks (PCNs), and highlights the importance of the molecular arrangement. Redox-active organic molecules hold considerable promise as flexible electronic elements, because their electronic state can easily be controlled using external energy. Although various kinds of redox-active organic molecules have been synthesized, attempts to apply them to electronic devices have been limited, owing to the lack of proper structural design. Moreover, ligand-based redox-active PCNs remain largely unexplored because of the limited availability of redox-active ligands. In addition to developing new redox-active organic molecules, in order to design electronic devices based on these molecules/PCNs, it is essential to understand the connections between their molecular arrangement, electrical properties, and redox activity. In this thesis, the redox-active organic molecule 2,5,8-tri(4-pyridyl)1,3-diazaphenalene (TPDAP), which features a large pi plane and multi-intermolecular interactivity, is used to develop a resistive switching memory device. In addition, its PCNs are synthesized to fabricate chemiresistive sensors, and the electrical properties are modulated using post-synthetic modification. Each mechanism is systematically investigated by means of structural determination and well-defined control experiments. Subsequently, the book proposes general guidelines for designing electronic devices using redox-active organic molecules. The book will appeal to a broad range of readers, from basic scientists to materials engineers, as well as general, non-expert readers.

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

An outstanding feature of this book is a collection of state-of-the-art reviews written by leading researchers in the nanomechanics of carbon nanotubes, nanocrystalline materials, biomechanics and polymer nanocomposites. The structure and properties of carbon nanotubes, polycrystalline metals, and coatings are discussed in great details. The book is an exceptional resource on multi-scale modelling of metals, nanocomposites, MEMS materials and biomedical applications. An extensive bibliography concerning all these topics is included. Highlights on bio-materials, MEMS, and the latest multi-scale methods (e.g., molecular dynamics and Monte Carlo) are presented. Numerous illustrations of inter-atomic potentials, nanotube deformation and fracture, grain rotation and growth in solids, ceramic coating structures, blood flows and cell adhesion are discussed.
This book provides a comprehensive review of latest developments in the analysis of mechanical phenomena in nanotechnology and bio-nanotechnology.