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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
This book presents posits a solution to the current limitations in global connectivity by introducing a global laser/optical communication system using constellation satellites, UAVs, HAPs and Balloons. The author outlines how this will help to satisfy the tremendous increasing demand for data exchange and information between end-users worldwide including in remote locations. The book provides both fundamentals and the advanced technology development in establishing worldwide communication and global connectivity using, (I) All-Optical technology, and (ii) Laser/Optical Communication Constellation Satellites (of different types, sizes and at different orbits), UAVs, HAPs (High Altitude Platforms) and Balloons. The book discusses step-by-step methods to develop a satellite backbone in order to interconnect a number of ground nodes clustered within a few SD-WAN (software-defined networking) in a wide area network (WAN) around the world in order to provide a fully-meshed communication network. This book pertains to anyone in optical communications, telecommunications, and system engineers, as well as technical managers in the aerospace industry and the graduate students, and researchers in academia and research laboratory. Proposed a solution to the limitations in global connectivity through a global laser/optical communication system using constellation satellites, UAVs, HAPs and Balloons; Provides both fundamentals and the advanced technology development in establishing global communication connectivity using optical technology and communication constellation satellites; Includes in-depth coverage of the basics of laser/optical communication constellation satellites.
Advances in Imaging and Electron Physics, Volume 205 is the latest release in this series that merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.
Fault Covering Problems in Reconfigurable VLSI Systems describes the authors' recent research on reconfiguration problems for fault-tolerance in VLSI and WSI Systems. The book examines solutions to a number of reconfiguration problems. Efficient algorithms are given for tractable covering problems and general techniques are given for dealing with a large number of intractable covering problems. The book begins with an investigation of algorithms for the reconfiguration of large redundant memories. Next, a number of more general covering problems are considered and the complexity of these problems is analyzed. Finally, a general and uniform approach is proposed for solving a wide class of covering problems. The results and techniques described here will be useful to researchers and students working in this area. As such, the book serves as an excellent reference and may be used as the text for an advanced course on the topic.
Smart Sensors and MEMS: Intelligent Devices and Microsystems for Industrial Applications, Second Edition highlights new, important developments in the field, including the latest on magnetic sensors, temperature sensors and microreaction chambers. The book outlines the industrial applications for smart sensors, covering direct interface circuits for sensors, capacitive sensors for displacement measurement in the sub-nanometer range, integrated inductive displacement sensors for harsh industrial environments, advanced silicon radiation detectors in the vacuum ultraviolet (VUV) and extreme ultraviolet (EUV) spectral range, among other topics. New sections include discussions on magnetic and temperature sensors and the industrial applications of smart micro-electro-mechanical systems (MEMS). The book is an invaluable reference for academics, materials scientists and electrical engineers working in the microelectronics, sensors and micromechanics industry. In addition, engineers looking for industrial sensing, monitoring and automation solutions will find this a comprehensive source of information.
During the last few years cavity-optomechanics has emerged as a new field of research. This highly interdisciplinary field studies the interaction between micro and nano mechanical systems and light. Possible applications range from novel high-bandwidth mechanical sensing devices through the generation of squeezed optical or mechanical states to even tests of quantum theory itself. This is one of the first books in this relatively young field. It is aimed at scientists, engineers and students who want to obtain a concise introduction to the state of the art in the field of cavity optomechanics. It is valuable to researchers in nano science, quantum optics, quantum information, gravitational wave detection and other cutting edge fields. Possible applications include biological sensing, frequency comb applications, silicon photonics etc. The technical content will be accessible to those who have familiarity with basic undergraduate physics.
Since January 1990, when the first edition ofthis first-of-a-kind book appeared, there has been much experimental and theoretical progress in the multi disciplinary subject of tribology and mechanics of magnetic storage devices. The subject has matured into a rigorous discipline, and many university tribology and mechanics courses now routinely contain material on magnetic storage devices. The major growth in the subject has been on the micro- and nanoscale aspects of tribology and mechanics. Today, most large magnetic storage industries use atomic force microscopes to image the magnetic storage components. Many companies use variations of AFMs such as friction force microscopes (FFMs) for frictional studies. These instruments have also been used for studying scratch, wear, and indentation. These studies are valuable in the fundamental understanding of interfacial phenomena. In the second edition, I have added a new chapter, Chapter 11, on micro and nanoscale aspects of tribology and mechanics of magnetic storage compo nents. This chapter presents the state of the art of the micro/nanotribology and micro/nanomechanics of magnetic storage components. In addition, typographical errors in Chapters 1 to 10 and the appendixes have been corrected. These additions update this book and make it more valuable to researchers of the subject. I am grateful to many colleagues and particularly to my students, whose work is reported in Chapter 11. I thank my wife, Sudha, who has been forbearing during the progress of the research reported in this chapter.
This book describes most recent progress in the properties, synthesis, characterization, modelling, and applications of nanomaterials and nanodevices. It begins with the review of the modelling of the structural, electronic and optical properties of low dimensional and nanoscale semiconductors, methodology of synthesis, and characterization of quantum dots and nanowires, with special attention towards Dirac materials, whose electrical conduction and sensing properties far exceed those of silicon-based materials, making them strong competitors. The contributed reviews presented in this book touch on broader issues associated with the environment, as well as energy production and storage, while highlighting important achievements in materials pertinent to the fields of biology and medicine, exhibiting an outstanding confluence of basic physical science with vital human endeavor. The subjects treated in this book are attractive to the broader readership of graduate and advanced undergraduate students in physics, chemistry, biology, and medicine, as well as in electrical, chemical, biological, and mechanical engineering. Seasoned researchers and experts from the semiconductor/device industry also greatly benefit from the book's treatment of cutting-edge application studies.
This book is intended for theoretical and experimental researchers who are interested in ferroelectrics and advanced memory. After introducing readers to dielectric, perovskites, advanced memories, and ferroelectric, it explains quantum simulation. Then, using molecular orbital calculation results, it explains the ferroelectric mechanism in perovskite titanium oxides in concrete terms. Lastly, the book examines the materials designed for high-performance ferroelectrics and discusses the future of high-speed memory.
Internet of things (IoT) is a new type of network that combines communication technology, expanded applications, and physical devices. Among them, agriculture is one of the most important areas in the application of the IoT technology, which has its unique requirements and integration features. Compared to the information technology in traditional agriculture, the agricultural IoT mainly refers to industrialized production and sustainable development under relatively controllable conditions. Agricultural IoT applies sensors, RFID, visual capture terminals and other types of sensing devices to detect and collect site information, and with broad applications in field planting, facility horticulture, livestock and poultry breeding, aquaculture and agricultural product logistics. It utilizes multiple information transmission channels such as wireless sensor networks, telecommunications networks and the internet to achieve reliable transmission of agricultural information at multiple scales and intelligently processes the acquired, massive information. The goals are to achieve (i) optimal control of agricultural production process, (ii) intelligent electronic trading of agricultural products circulation, and (iii) management of systematic logistics, quality and safety traceability. This book focuses on three levels of agricultural IoT network: information perception technology, information transmission technology and application technology.
In this book, the fundamentals of magnetism are treated, starting at an introductory level. The origin of magnetic moments, the response to an applied magnetic field, and the various interactions giving rise to different types of magnetic ordering in solids are presented and many examples are given. Crystalline-electric-field effects are treated at a level that is sufficient to provide the basic knowledge necessary in understanding the properties of materials in which these effects play a role. Itinerant-electron magnetism is presented on a similar basis. Particular attention has been given to magnetocrystalline magnetic anisotropy and the magnetocaloric effect. Also, the usual techniques for magnetic measurements are presented. About half of the book is devoted to magnetic materials and the properties that make them suitable for numerous applications. The state of the art is presented of permanent magnets, high-density recording materials, soft-magnetic materials, Invar alloys and magnetostrictive materials. Many references are given.
This book explains reliability techniques with examples from electronics design for the benefit of engineers. It presents the application of de-rating, FMEA, overstress analyses and reliability improvement tests for designing reliable electronic equipment. Adequate information is provided for designing computerized reliability database system to support the application of the techniques by designers. Pedantic terms and the associated mathematics of reliability engineering discipline are excluded for the benefit of comprehensiveness and practical applications. This book offers excellent support for electrical and electronics engineering students and professionals, bridging academic curriculum with industrial expectations.
Macromolecular self-assembly - driven by weak, non-covalent, intermolecular forces - is a common principle of structure formation in natural and synthetic organic materials. The variability in material arrangement on the nanometre length scale makes this an ideal way of matching the structure-function demands of photonic and optoelectronic devices. However, suitable soft matter systems typically lack the appropriate photoactivity, conductivity or chemically stability. This thesis explores the implementation of soft matter design principles for inorganic thin film nanoarchitectures. Sacrificial block copolymers and colloids are employed as structure-directing agents for the co-assembly of solution-based inorganic materials, such as TiO_2 and SiO_2. Novel fabrication and characterization methods allow unprecedented control of material formation on the 10 - 500 nm length scale, allowing the design of material architectures with interesting photonic and optoelectronic properties.
The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc. are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of superconductor, specimen size and electric field strength. Recent developments of critical current properties in various high-Tc superconductors and MgB2 are introduced. Other topics are: singularity in the case of transport current in a parallel magnetic field such as deviation from the Josephson relation, reversible flux motion inside pinning potentials which causes deviation from the critical state model prediction, the concept of the minimization of energy dissipation in the flux pinning phenomena which gives the basis for the critical state model, etc. Significant reduction in the AC loss in AC wires with very fine filaments originates from the reversible flux motion which is dominant in the two-dimensional pinning. The concept of minimum energy dissipation explains also the behavior of flux bundle size which determines the irreversibility line under the flux creep. The new edition has been thoroughly updated, with new sections on the progress in enhancing the critical current density in high temperature superconductors by introduction of artificial pinning centers, the effect of packing density on the critical current density and irreversibility field in MgB2 and derivation of the force-balance equation from the minimization of the free energy including the pinning energy.
This book presents a comprehensive theory on glide-symmetric topological crystalline insulators. Beginning with developing a theory of topological phase transitions between a topological and trivial phase, it derives a formula for topological invariance in a glide-symmetric topological phase when inversion symmetry is added into a system. It also shows that the addition of inversion symmetry drastically simplifies the formula, providing insights into this topological phase, and proposes potential implementations. Lastly, based on the above results, the author establishes a way to design topological photonic crystals. Allowing readers to gain a comprehensive understanding of the glide-symmetric topological crystalline insulators, the book offers a way to produce such a topological phase in various physical systems, such as electronic and photonic systems, in the future.
Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.
For the near future, the recent predictions and roadmaps of silicon semiconductor technology all agree that the number of transistors on a chip will keep growing exponentially according to Moore's Law, pushing technology towards the system-on-a-chip (SOC) era. However, we are increasingly experiencing a productivity gap where the chip complexity that can be handled by current design teams falls short of the possibilities offered by technological advances. Together with growing time-to-market pressures, this drives the need for innovative measures to increase design productivity by orders of magnitude. It is commonly agreed that the solutions for achieving such a leap in design productivity lie in a shift of the focus of the design process to higher levels of abstraction on the one hand and in the massive reuse of predesigned, complex system components (intellectual property, IP) on the other hand. In order to be successful, both concepts eventually require the adoption of new languages and methodologies for system design, backed-up by the availability of a corresponding set of system-level design automation tools. This book presents the SpecC system-level design language (SLDL) and the corresponding SpecC design methodology. The SpecC language is intended for specification and design of SOCs or embedded systems including software and hardware, whether using fixed platforms, integrating systems from different IPs, or synthesizing the system blocks from programming or hardware description languages. SpecC Specification Language and Methodology describes the SpecC methodology that leads designers from an executable specification to an RTL implementation through a well-defined sequence of steps. Each model is described and guidelines are given for generating these models from executable specifications. Finally, the SpecC methodology is demonstrated on an industrial-size example. The design community is now entering the system level of abstraction era and SpecC is the enabling element to achieve a paradigm shift in design culture needed for system/product design and manufacturing. SpecC Specification Language and Methodology will be of interest to researchers, designers, and managers dealing with system-level design, design flows and methodologies as well as students learning system specification, modeling and design.
This concise volume contains the key papers presented during the International NATO Advanced Research Workshop on Silicon on Insulator device technologies. The authors have moved beyond reporting the current state of the technology to explore wider issues, from the economic aspects incorporating SOI and related materials into circuits and systems to consideration of low temperature electronics, quantum devices and MEMS.
In this thesis, the pseudogap and the precursor superconducting state, which are of great importance in clarifying the superconductivity mechanism in high-temperature cuprate superconductors, are investigated with a c-axis optical study in YBa2(Cu1-xZnx)3Oy. Testing was performed over a wide energy range with smaller temperature intervals for several Zn-substituted samples, as well as for several carrier-doping levels. A spectral weight (SW) analysis, in which the pseudogap behavior can be separated from the superconducting condensate with the SW transfer to the high-energy region, revealed that the pseudogap is not the precursor of the superconductivity (carriers moving to the high-energy region with pseudogap opening never contribute to the superconducting condensation). Moreover, the high-energy transfer continues even below Tc for the Zn-substituted samples (in which we weaken the superconductivity), which gives evidence to the coexistence of the pseudogap and the superconducting gap below Tc. On the other hand, the analysis of optical conductivity revealed that a precursor state to superconductivity can be defined at temperatures much higher than Tc. The superconducting carrier density (ns) was calculated for each temperature (above and below Tc) and the results confirmed the existence of ns at temperatures above Tc. The observed real superconducting condensate (ns) above Tc puts a serious constraint on the theory for high- Tc superconductivity. A theory based on an inhomogeneous superconducting state, in which a microscopically phase-separated state in a doped Mott insulator can be observed, is the most plausible candidate. This theory can explain the existence of ns and the observed temperature range for the precursor superconducting state. The results obtained show that the pseudogap coexists with superconductivity below Tc and is not the precursor of superconductivity. On the other hand, it is also possible to define a precursor superconducting state that is different than the pseudogap. The temperature range and the observed superconducting condensate in this state can be explained with the help of the inhomogeneous superconducting state.
MXene, a two-dimensional (2D) transition metal carbide, nitride, and carbonitride, was discovered in 2011. MXene has great potential as a cocatalyst in the field of photocatalysis due to its unique properties and structure. MXene-Based Photocatalysts: Fabrication and Applications introduces readers to the fundamentals, preparation, microstructure characterization, and a variety of applications of MXene-based photocatalysts. The book is a comprehensive reference for MXene materials and provides an overview of the current literature on MXene-based photocatalysts. FEATURES Discusses preparation methods of MXenes Describes the morphology and microstructure of MXenes Offers strategies for fabricating MXene-based photocatalysts Details the reaction mechanism of MXene-based photocatalysts Covers applications in photocatalytic water-splitting, photocatalytic CO2 reduction, photocatalytic degradation, photocatalytic nitrogen fixation, and photocatalytic H2O2 production This book serves as an invaluable guide for advanced students, industry professionals, professors, and researchers in the field of materials science and engineering, photocatalysis, energy, and environmental applications.
This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of graphene quantum dots, electron-electron interaction, magnetic properties and optical properties of gated graphene nanostructures. The electronic, optical and magnetic properties of the graphene quantum dots as a function of size, shape, type of edge and carrier density are considered. Special attention is paid to the understanding of edges and the emergence of edge states for zigzag edges. Atomistic tight binding and effective mass approaches to single particle calculations are performed. Furthermore, the theoretical and numerical treatment of electron-electron interactions at the mean-field, HF, DFT and configuration-interaction level is described in detail.
Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding. |
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