Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interfacea "induced gap states (IFIGS) as a unifying theme, MAnch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Paulinga (TM)s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction.

This book is concerned with wafer fabrication and the factories that manufacture microprocessors and other integrated circuits. With the invention of the transistor in 1947, the world as we knew it changed. The transistor led to the microprocessor, and the microprocessor, the guts of the modern computer, has created an epoch of virtually unlimited information processing. The electronics and computer revolution has brought about, for better or worse, a new way of life. This revolution could not have occurred without wafer fabrication, and its associated processing technologies. A microprocessor is fabricated via a lengthy, highly-complex sequence of chemical processes. The success of modern chip manufacturing is a miracle of technology and a tribute to the hundreds of engineers who have contributed to its development. This book will delineate the magnitude of the accomplishment, and present methods to analyze and predict the performance of the factories that make the chips. The set of topics covered juxtaposes several disciplines of engineering. A primary subject is the chemical engineering aspects of the electronics industry, an industry typically thought to be strictly an electrical engineer's playground. The book also delves into issues of manufacturing, operations performance, economics, and the dynamics of material movement, topics often considered the domain of industrial engineering and operations research. Hopefully, we have provided in this work a comprehensive treatment of both the technology and the factories of wafer fabrication. Novel features of these factories include long process flows and a dominance of processing over operational issues.

Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential."

This book introduces the physics and chemistry of plastic scintillators (fluorescent polymers) that are able to emit light when exposed to ionizing radiation, discussing their chemical modification in the early 1950s and 1960s, as well as the renewed upsurge in interest in the 21st century. The book presents contributions from various researchers on broad aspects of plastic scintillators, from physics, chemistry, materials science and applications, covering topics such as the chemical nature of the polymer and/or the fluorophores, modification of the photophysical properties (decay time, emission wavelength) and loading of additives to make the material more sensitive to, e.g., fast neutrons, thermal neutrons or gamma rays. It also describes the benefits of recent technological advances for plastic scintillators, such as nanomaterials and quantum dots, which allow features that were previously not achievable with regular organic molecules or organometallics.

This volume gathers the latest advances, innovations and applications in the field of vibration and technology of machinery, as presented by leading international researchers and engineers at the XV International Conference on Vibration Engineering and Technology of Machinery (VETOMAC), held in Curitiba, Brazil on November 10-15, 2019. Topics include concepts and methods in dynamics, dynamics of mechanical and structural systems, dynamics and control, condition monitoring, machinery and structural dynamics, rotor dynamics, experimental techniques, finite element model updating, industrial case studies, vibration control and energy harvesting, and MEMS. The contributions, which were selected through a rigorous international peer-review process, share exciting ideas that will spur novel research directions and foster new multidisciplinary collaborations.

The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience. Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.

Quantum dots are nanometer-size semiconductor structures, and represent one of the most rapidly developing areas of current semiconductor research as increases in the speed and decreases in the size of semiconductor devices become more important. They present the utmost challenge to semiconductor technology, making possible fascinating novel devices. This important new reference book focuses on the key phenomena and principles. Chapter 1 provides a brief account of the history of quantum dots, whilst the second chapter surveys the various fabrication techniques used in the past two decades, and introduces the concept of self-organized growth. This topic is expanded in the following chapter, which presents a broad review of self-organization phenomena at surfaces of crystals. Experimental results on growth of quantum dot structures in many different systems and on their structural characterization are presented in Chapter 4. Basic properties of the dots relate to their geometric structure and chemical composition. Numerical modeling of the electronic and optical properties of real dots is presented in Chapter 5, together with general theoretical considerations on carrier capture, relaxation, recombination and properties of quantum dot lasers. Chapters 6 and 7 summarize experimental results on electronic, optical and electrical properties. The book concludes by disoussing highly topical results on quantum-dot-based photonic devices — mainly quantum dot lasers. Quantum Dot Heterostructures is written by some of the key researchers who have contributed significantly to the development of the field, and have pioneered both the theoretical understanding of quantum dot related phenomena and quantum dot lasers. It is of great interest to graduate and postgraduate students, and to researchers in semiconductor physics and technology and optoelectronics.

Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology provides a comprehensive overview of materials for application in thin film solar cells. It is the first book that compares experimental and computer-modeling methods, combining the state of the art in technology with the latest insights in device modeling. A wide range of experimental issues are explored, from materials and basic device physics of thin film solar cells to potential mass production facilities for solar panels. The modeling section presents an approach to integrated optical and electrical modeling of complete devices, including optical light trapping, and describes the physical materials parameters related to amorphous silicon that are crucial for successful modeling. The increasing importance of multijunction cells with different bandgap components for thin film silicon cells is reflected in a description of the latest breakthroughs acquired experimentally and by modeling. Concluding chapters describe what can be learned from combined modeling and device fabrication, indicating potential future methods of amorphous silicon solar cell optimization. This book will prove invaluable to researchers in the amorphous and microcrystalline silicon field and the physical and experimental approaches will be of interest to researchers investigating solar cells or other film devices for large area applications.

This book describes most recent progress in the properties, synthesis, characterization, modelling, and applications of nanomaterials and nanodevices. It begins with the review of the modelling of the structural, electronic and optical properties of low dimensional and nanoscale semiconductors, methodology of synthesis, and characterization of quantum dots and nanowires, with special attention towards Dirac materials, whose electrical conduction and sensing properties far exceed those of silicon-based materials, making them strong competitors. The contributed reviews presented in this book touch on broader issues associated with the environment, as well as energy production and storage, while highlighting important achievements in materials pertinent to the fields of biology and medicine, exhibiting an outstanding confluence of basic physical science with vital human endeavor. The subjects treated in this book are attractive to the broader readership of graduate and advanced undergraduate students in physics, chemistry, biology, and medicine, as well as in electrical, chemical, biological, and mechanical engineering. Seasoned researchers and experts from the semiconductor/device industry also greatly benefit from the book's treatment of cutting-edge application studies.

The contrasting examples of microwave plasmas given in this volume demonstrate their capability of not only covering the totality of expressed needs in that particular field, but in many others. For example the ions and reactive neutral species, indispensable for the synergetic effects in etching and deposition processes can be used in metallurgical treatment, and for materials processing in general. They also have the ability to dissociate molecules and excite atoms as required in analytical chemistry where the information on the constituent concentrations is obtained through optical spectroscopy or mass spectrometry. Finally, microwave plasmas can supply the photons for laser and lighting applications. It is noteworthy that microwave plasmas cover an impressive pressure range of eight orders of magnitude from 10-3 Pa (10-5 torr) to above atmospheric pressure. The versatility of microwave plasmas, their moderate cost, and their ease of implementation particularly appeal to the industrial entrepreneur.

As well as providing a review of current developments, the work proposes a synthesis on microwave discharges, laying out the corresponding physical references without developing too much plasma theory. It will be of interest both to the user, who may not be overly concerned about plasma science, and to the plasma expert, who may wish to redirect his interest towards plasma applications, such as materials processing.

Highly Sensitive Optical Receivers primarily treats the circuit design of optical receivers with external photodiodes. Continuous-mode and burst-mode receivers are compared. The monograph first summarizes the basics of III/V photodetectors, transistor and noise models, bit-error rate, sensitivity and analog circuit design, thus enabling readers to understand the circuits described in the main part of the book. In order to cover the topic comprehensively, detailed descriptions of receivers for optical data communication in general and, in particular, optical burst-mode receivers in deep-sub-um CMOS are presented. Numerous detailed and elaborate illustrations facilitate better understanding. "

This book covers a wide range of topics related to functional dyes, from synthesis and functionality to application. Making a survey of recent progress in functional dye chemistry, it provides an opportunity not only to understand the structure-property relationships of a variety of functional dyes but also to know how they are applied in practical use, from electronic devices to biochemical analyses. From classic dyes such as cyanines, squaraines, porphyrins, phthalocyanines, and others to the newest functional -conjugation systems, various types of functional dyes are dealt with extensively in the book, focusing especially on the state of the art and the future. Readers will benefit greatly from the scientific context in which organic dyes and pigments are comprehensively explained on the basis of chemistry.

This book presents the emerging regime of zero refractive index photonics, involving metamaterials that exhibit effectively zero refractive index. Metamaterials are artificial structures whose optical properties can be tailored at will. With metamaterials, intriguing and spellbinding phenomena like negative refraction and electromagnetic cloaking could be realized, which otherwise seem unnatural or straight out of science fiction. Zero index metamaterials are also seen as a means of boosting nonlinear properties and are believed to have strong prospects for being useful in nonlinear optical applications. In summary, this book highlights almost everything currently available on zero index metamaterials and is useful for professionally interested and motivated readers.

This book presents a comprehensive theory on glide-symmetric topological crystalline insulators. Beginning with developing a theory of topological phase transitions between a topological and trivial phase, it derives a formula for topological invariance in a glide-symmetric topological phase when inversion symmetry is added into a system. It also shows that the addition of inversion symmetry drastically simplifies the formula, providing insights into this topological phase, and proposes potential implementations. Lastly, based on the above results, the author establishes a way to design topological photonic crystals. Allowing readers to gain a comprehensive understanding of the glide-symmetric topological crystalline insulators, the book offers a way to produce such a topological phase in various physical systems, such as electronic and photonic systems, in the future.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

This book addresses the development, properties, and applications of atomic-layered boron, or, borophene. The authors explain how borophene was predicted and created before investigating the properties that make it a desirable and useful material. The material is extremely thin and possesses exotic quantum states of new Dirac physics. Applications in superconductivity, plasmonics, and industrial chemical catalysis are examined, along with an examination of the material's unique hydrogen boride and boron nitride forms. Given the varied potential uses for the new-developed borophene, this timely book will be useful to researchers in academia and industry.

Since the 1980s, scientists have been researching adaptive structures for materials, for multifunctional elements or even for complete systems. Adaptronics (smart materials, smart structures, smart systems) is a field of distinct interdisciplinarity. The book therefore offers an interdisciplinary view of adaptronic systems, materials and functional elements and their applications. The subject matter integrates various engineering disciplines, from electrical engineering and information technology to manufacturing and control engineering, materials engineering and structural mechanics - to name but a few of the relevant subject areas. Starting from the basic principles and variants of adaptronic systems and functional materials, the textbook explains the different construction methods of functional elements. Building on this, readers learn how to apply this knowledge to active shape control, active vibration control and active vibroacoustics. For each of these topics the author presents current examples from research, discusses research results and future research questions. Each of the nine chapters closes with references to further literature. An index of the mathematical symbols used and a keyword index facilitate learning for readers.The book is aimed at Master's students in engineering courses such as mechanical engineering, aerospace engineering, mechatronics, automotive engineering and related courses. The book provides a comprehensive overview for industrial practitioners who want to familiarize themselves with the field of adaptronics and also serves as a reliable reference book.

The quantum Hall effects remains one of the most important subjects to have emerged in condensed matter physics over the past 20 years. The fractional quantum Hall effect, in particular, has opened up a new paradigm in the study of strongly correlated electrons, and it has been shown that new concepts, such as fractional statistics, anyon, chiral Luttinger liquid and composite particles, are realized in two-dimensional electron systems. This book explains the quantum Hall effects together with these new concepts starting from elementary quantum mechanics. Thus, graduate students can use this book to gain an overall understanding of these phenomena.

This book offers essential information on China's human spacecraft technologies, reviewing their evolution from theoretical and engineering perspectives. It discusses topics such as the design of manned spaceships, cargo spacecraft, space laboratories, space stations and manned lunar and Mars detection spacecraft. It also addresses various key technologies, e.g. for manned rendezvous, docking and reentry. The book is chiefly intended for researchers, graduate students and professionals in the fields of aerospace engineering, control, electronics & electrical engineering, and related areas.

This classroom-tested textbook provides a self-contained one-semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson's equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate.

This book highlights the properties of advanced materials suitable for realizing THz devices, circuits and systems, and processing and fabrication technologies associated with those. It also discusses some measurement techniques exclusively effective for THz regime, newly explored materials and recently developed solid-state devices for efficient generation and detection of THz waves, potentiality of metamaterials for implementing THz passive circuits and bio-sensors, and finally the future of silicon as the base material of THz devices. The book especially focuses on the recent advancements and several research issues related to THz materials and devices; it also discusses theoretical, experimental, established, and validated empirical works on these topics.

This book presents a theoretical study of the generation and conversion of phonon angular momentum in crystals. Recently, rotational motions of lattice vibrations, i.e., phonons, in crystals attract considerable attentions. As such, the book theoretically demonstrate generations of phonons with rotational motions, based on model calculations and first-principle calculations. In systems without inversion symmetry, the phonon angular momentum is shown to be caused by the temperature gradient, which is demonstrated in crystals such as wurtzite gallium nitride, tellurium, and selenium using the first-principle calculations. In systems with neither time-reversal nor inversion symmetries, the phonon angular momentum is shown to be generated by an electric field. Secondly, the book presents the microscopic mechanisms developed by the author and his collaborator on how these microscopic rotations of nuclei are coupled with electron spins. These predictions serve as building blocks for spintronics with phonons or mechanical motions.

Exploring such topics as materials, metals, bonding techniques, etching procedures and fabrication techniques, this book gives examples which should be comprehended by both technical and non-technical readers.

This book is devoted to the theoretical and experimental investigation of the optoelectronic oscillator (OEO) with direct and external modulation of laser emission. Such devices, sources of precision radio frequency oscillations using laser excitation, are novel and technologically relevant, with manifold possible applications. The book includes a review of the present state of the theory and generation techniques in microwave and mm-wave ranges for traditional and optoelectronic oscillators, description of OEO construction and operation principles, theoretical oscillation analysis and mathematical description of the relevant semi-classical laser physics, and investigation of the power spectral density of noises. Technical features and advantages of OEOs with external and direct modulation of laser emission are discussed together with functional diagrams. The characteristics of OEOs are compared with other traditional RF oscillators, such as quartz, surface acoustic waves, and oscillators with electromagnetic wave cavities. Special attention is paid to Q-factors and phase noises of RF carriers at small offsets. The authors discuss the technical characteristics of modern optoelectronic methods for precision RF oscillation formation, such as commercial large-dimension and compact quantum frequency standards with optical pumping on cesium and rubidium cells. This book is aimed at scientists and engineers in academia and industry who work with sources of microwave and mm-wave signals.