This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Testing techniques for VLSI circuits are undergoing many exciting changes. The predominant method for testing digital circuits consists of applying a set of input stimuli to the IC and monitoring the logic levels at primary outputs. If, for one or more inputs, there is a discrepancy between the observed output and the expected output then the IC is declared to be defective. A new approach to testing digital circuits, which has come to be known as IDDQ testing, has been actively researched for the last fifteen years. In IDDQ testing, the steady state supply current, rather than the logic levels at the primary outputs, is monitored. Years of research suggests that IDDQ testing can significantly improve the quality and reliability of fabricated circuits. This has prompted many semiconductor manufacturers to adopt this testing technique, among them Philips Semiconductors, Ford Microelectronics, Intel, Texas Instruments, LSI Logic, Hewlett-Packard, SUN microsystems, Alcatel, and SGS Thomson. This increase in the use of IDDQ testing should be of interest to three groups of individuals associated with the IC business: Product Managers and Test Engineers, CAD Tool Vendors and Circuit Designers. Introduction to IDDQ Testing is designed to educate this community. The authors have summarized in one volume the main findings of more than fifteen years of research in this area.

This book will present the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronc semiconductor devices. The book chapters will be authored primarily by the physics, applied physics and electrical engineering professors and students who worked for 5 years under the Polarization Effects in Semiconductors DOD funded Multi Disciplinary University Research Initiative. The book will cover ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, and GaN/AlGaN GaAlN/AlGaInN and other nitride, and SiC hetero-structures; graded structures for distributed piezo-electric charge, electrical and electronic characterization of polarization charge and charge distribution by scanning-probe spectroscopies, gauge factors and strain effects.It also covers: polarization in extended defects and device effects; Piezo-electric strain/charge engineering and application to device design and processing: ohmic, and Shottky diodes, drift, diffusion, low and high field carrier dynamics in plane and normal to thin film and polarization engineered semiconductor hetero-structures. Polarization inclusion and utilization in design of sensors, microwave, low noise, and optoelectronic devices (HEMT, HBT, LED, Laser acoustic, chemical, optical and biological sensors) is also covered.

Nowadays information technology is based on semiconductor and ferromagnetic materials. Information processing and computation are based on electron charge in semiconductor transistors and integrated circuits, and information is stored on magnetic high-density hard disks based on the physics of the electron spins. Recently, a new branch of physics and nanotechnology, called magneto-electronics, spintronics, or spin electronics, has emerged, which aims at simultaneously exploiting both the charge and the spin of electrons in the same device. A broader goal is to develop new functionality that does not exist separately in a ferromagnet or a semiconductor. The aim of this book is to present new directions in the development of spin electronics in both the basic physics and the technology which will become the foundation of future electronics.

The Verilog Hardware Description Language was first introduced in 1984. Over the 20 year history of Verilog, every Verilog engineer has developed his own personal "bag of tricks" for coding with Verilog. These tricks enable modeling or verifying designs more easily and more accurately. Developing this bag of tricks is often based on years of trial and error. Through experience, engineers learn that one specific coding style works best in some circumstances, while in another situation, a different coding style is best. As with any high-level language, Verilog often provides engineers several ways to accomplish a specific task. Wouldn't it be wonderful if an engineer first learning Verilog could start with another engineer's bag of tricks, without having to go through years of trial and error to decide which style is best for which circumstance? That is where this book becomes an invaluable resource. The book presents dozens of Verilog tricks of the trade on how to best use the Verilog HDL for modeling designs at various level of abstraction, and for writing test benches to verify designs. The book not only shows the correct ways of using Verilog for different situations, it also presents alternate styles, and discusses the pros and cons of these styles.

The book presents the modeling and control of hydrogen-air PEM fuel cells, including simultaneous estimation of the parameters and states, fuzzy cluster modeling, SPM-based predictive control and advanced fuzzy control. MATLAB/Simulink-based modeling and control programs are discussed in detail. With simulations and experiments, it is an essential reference for both scientists and industrial engineers.

Microcontrollers exist in a wide variety of models with varying structures and numerous application opportunities. Despite this diversity, it is possible to find consistencies in the architecture of most microcontrollers. Microcontrollers: Fundamentals and Applications with PIC focuses on these common elements to describe the fundamentals of microcontroller design and programming. Using clear, concise language and a top-bottom approach, the book describes the parts that make up a microcontroller, how they work, and how they interact with each other. It also explains how to program medium-end PICs using assembler language. Examines analog as well as digital signals This volume describes the structure and resources of general microcontrollers as well as PIC microcontrollers, with a special focus on medium-end devices. The authors discuss memory organization and structure, and the assembler language used for programming medium-end PIC microcontrollers. They also explore how microcontrollers can acquire, process, and generate digital signals, explaining available techniques to deal with parallel input or output, peripherals, resources for real-time use, interrupts, and the specific characteristics of serial data interfaces in PIC microcontrollers. Finally, the book describes the acquisition and generation of analog signals either using resources inside the chip or by connecting peripheral circuits. Provides hands-on clarification Using practical examples and applications to supplement each topic, this volume provides the tools to thoroughly grasp the architecture and programming of microcontrollers. It avoids overly specific details so readers are quickly led toward design implementation. After mastering the material in this text, they will understand how to efficiently use PIC microcontrollers in a design process.

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

An outstanding feature of this book is a collection of state-of-the-art reviews written by leading researchers in the nanomechanics of carbon nanotubes, nanocrystalline materials, biomechanics and polymer nanocomposites. The structure and properties of carbon nanotubes, polycrystalline metals, and coatings are discussed in great details. The book is an exceptional resource on multi-scale modelling of metals, nanocomposites, MEMS materials and biomedical applications. An extensive bibliography concerning all these topics is included. Highlights on bio-materials, MEMS, and the latest multi-scale methods (e.g., molecular dynamics and Monte Carlo) are presented. Numerous illustrations of inter-atomic potentials, nanotube deformation and fracture, grain rotation and growth in solids, ceramic coating structures, blood flows and cell adhesion are discussed.
This book provides a comprehensive review of latest developments in the analysis of mechanical phenomena in nanotechnology and bio-nanotechnology.

This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling," has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore's Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore's law and each dif?culty has found a solution.

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. "Physics and Technology of Dilute III-V Nitride Semiconductors and Novel Dilute Nitride Material Systems" reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.

Topological defects are generic in continuous media. In the relativistic quantum vacuum they are known as cosmic strings, in superconductors as quantized flux lines, and in superfluids, low-density atomic Bose-Einstein condensates and neutron stars as quantized vortex lines. This collection of articles by leading scientists presents a modern treatment of the physics of vortex matter, mainly applied to unconventional superconductors and superfluids but with extensions to other areas of physics.

The goal of putting systems on a chip' has been a difficult challenge that is only recently being met. Since the world is analog', putting systems on a chip requires putting analog interfaces on the same chip as digital processing functions. Since some processing functions are accomplished more efficiently in analog circuitry, chips with a large amount of analog and digital circuitry are being designed. Whether a small amount of analog circuitry is combined with varying amounts of digital circuitry or the other way around, the problem encountered in marrying analog and digital circuitry are the same but with different scope. Some of the most prevalent problems are chip/package capacitive and inductive coupling, ringing on the RLC tuned circuits that form the chip/package power supply rails and off-chip drivers and receivers, coupling between circuits through the chip substrate bulk, and radiated emissions from the chip/package interconnects. To aggravate the problems of designers who have to deal with the complexity of mixed-signal coupling there is a lack of verification techniques to simulate the problem. In addition to considering RLC models for the various chip/package/board level parasitics, mixed-signal circuit designers must also model coupling through the common substrate when simulating ICs to obtain an accurate estimate of coupled noise in their designs. Unfortunately, accurate simulation of substrate coupling has only recently begun to receive attention, and techniques for the same are not widely known. Simulation Techniques and Solutions for Mixed-Signal Coupling in Integrated Circuits addresses two major issues of the mixed-signal coupling problem -- how to simulate it and how to overcome it. It identifies some of the problems that will be encountered, gives examples of actual hardware experiences, offers simulation techniques, and suggests possible solutions. Readers of this book should come away with a clear directive to simulate their design for interactions prior to building the design, versus a build it and see' mentality.

Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Processor Design provides insight into a number of different flavors of processor architectures and their design, software tool generation, implementation, and verification. After a brief introduction to processor architectures and how processor designers have sometimes failed to deliver what was expected, the authors introduce a generic flow for embedded on-chip processor design and start to explore the vast design space of on-chip processing. The types of processor cores covered include general purpose RISC cores, traditional DSP, a VLIW approach to signal processing, processor cores that can be customized for specific applications, reconfigurable processors, protocol processors, Java engines, and stream processors. Co-processor and multi-core design approaches that deliver application-specific performance over and above that which is available from single-core designs are also described.

This text focuses on techniques for minimizing power dissipation during test application at logic and register-transfer levels of abstraction of the VLSI design flow. It surveys existing techniques and presents several test automation techniques for reducing power in scan-based sequential circuits and BIST data paths.

"Nanostructure Semiconductor Optical Amplifiers" reviews all-optical processing methods currently available and presents semiconductor optical amplifiers (SOAs) as a new building block for this purpose. The authors discuss the overcomes of high frequency operation of SOAs and propose a new all-optical pumping method for the implementation of semiconductor optical amplifiers. Content Level Research

"Fundamentals of Nanoscaled Field Effect Transistors" gives comprehensive coverage of thefundamental physical principles and theory behind nanoscale transistors.The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

This is a unique book devoted to the important class of nitride semiconductors and devices. Numerous tables and figures detailing properties and performance devices are compiled. Structural, electrical and optical properties of nitrides and substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies (contacts), dopant incorporation and analyses, pn-junctions, light-emitting diodes, and blue lasers are treated succinctly. Attention is paid to both technological issues and fundamentals.