Gettering Defects in Semiconductors fulfills three basic purposes:

- to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;

- to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;

- to fill a gap in the contemporary literature on the underlying semiconductor-material theory.

The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid-state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.

Tutorial lectures given by world-renowned researchers have become one of the important traditions of the Nano and Giga Challenges (NGC) conference series. 1 Soon after preparations had begun for the rst forum, NGC2002, in Moscow, Russia, the organizers realized that publication of the lectures notes would be a va- able legacy of the meeting and a signi cant educational resource and knowledge base for students, young researchers, and senior experts. Our rst book was p- lished by Elsevier and received the same title as the meeting itself-Nano and Giga 2 Challenges in Microelectronics. Our second book, Nanotechnology for Electronic 3 4 Materials and Devices, based on the tutorial lectures at NGC2004 in Krakow, 5 Poland, the third book from NGC2007 in Phoenix, Arizona, and the current book 6 from joint NGC2009 and CSTC2009 meeting in Hamilton, Ontario, have been published in Springer's Nanostructure Science and Technology series. Hosted by McMaster University, the meeting NGC/CSTC 2009 was held as a joint event of two conference series, Nano and Giga Challenges (Nano & Giga Forum) and Canadian Semiconductor Technology Conferences (CSTC), bringing together the networks and expertise of both professional forums. Informational (electronics and photonics), renewable energy (solar systems, fuel cells, and batteries), and sensor (nano and bio) technologies have reached a new stage in their development in terms of engineering limits to cost-effective impro- ment of current technological approaches. The latest miniaturization of electronic devices is approaching atomic dimensions.

This short Introduction into Space Charge E?ects in Semiconductors is designed for teaching the basics to undergraduates and show how space charges are created in semiconductors and what e?ect they have on the el- tric?eldandthe energybanddistributioninsuchmaterials,andconsequently on the current-voltage characteristics in semiconducting devices. Such space charge e?ects were described previously in numerous books, fromtheclassicsofSpenkeandShockleytothemorerecentonesofSeegerand others.Butmanymoredetailedinformationwereonlyavailableintheoriginal literatureandsomeofthemnotatall.Itseemstobeimportanttocollectallin a comprehensive Text that can be presented to students in Physics, Electrical Engineering, and Material Science to create the fundamental knowledge that is now essential for further development of more sophisticated semiconductor devices and solar cells. This book will go through every aspect of space charge e?ects and - scribe them from simple elementaries to the basics of semiconductor devices, systematically and in progressing detail. For simplicity we have chosen this description for a one-dimensional se- conductorthatpermitsasimpledemonstrationoftheresultsgraphicallywi- out requiring sometimes confusing perspective rendering. In order to clarify the principles involved, the book starts with a hy- thetical model, by assuming simple space charge distributions and deriving their e?ects on ?eld and potential distributions, using the Poisson equation. Itemphasizestheimportantsignrelationsoftheinterreactingvariables,space charge, ?eld, and potential (band edges). It then expands into simple semiconductor models that contain an abrupt nn-junction and gives an example of important space chargelimited currents, + as observed in nn -junctions.

How do you protect electrical systems from high energy electromagnetic pulses? This book completes the overview of systems and practices against EMPs from high altitude sources started with the previous "Protecting Electrical Equipment - Good Practices for preventing high altitude electromagnetic pulse impacts", including practical protection methods and means for evaluating their effectiveness.

The chemistry and physics of group 14 elements such as silicon and germanium have been extensively studied, largely due to their fundamental importance in the development of semiconductor electronics. In addition, crystalline open-framework and nano-porous materials are attracting increasing attention for their potential technological applications. Inorganic open-framework materials comprised of group 14 elements crystallizing in crystal structures known as clathrates are of particular interest. These materials correspond to expanded forms, and in some cases metastable allotropes, of silicon, germanium and tin. The novel crystal structures these materials possess are intimately related to the unique physical properties they exhibit. Just as interesting as the structure and properties group 14 clathrates display is the diverse range of synthetic techniques developed to synthesize and grow single crystals of these materials. This volume will encompass many of these aspects and describe their potential for important technological applications.

The photorefractive effect is now firmly established as one of the highest-sensitivity nonlinear optical effects, making it an attractive choice for use in many optical holographic processing applications. As with all technologies based on advanced materials, the rate of progress in the development of photorefractive applications has been principally limited by the rate at which breakthroughs in materials science have supplied better photorefractive materials. The last ten years have seen an upsurge of interest in photorefractive applications because of several advances in the synthesis and growth of new and sensitive materials. This book is a collection of many of the most important recent developments in photorefractive effects and materials. The introductory chapter, which provides the necessary tools for understanding a wide variety of photorefractive phenomena, is followed by seven contributed chapters that offer views of the state-of-the-art in several different material systems. The second chapter represents the most detailed study to date on the growth and photorefractive performance of BaTi03, one of the most important photorefractive ferroelectrlcs. The third chapter describes the process of permanently fixing holographic gratings in ferroelectrics, important for volumetric data storage with ultra-high data densities. The fourth chapter describes the discovery and theory of photorefractive spatial solitons. Photorefractive polymers are an exciting new class of photo refractive materials, described in the fifth chapter. Polymers have many advantages, primarily related to fabrication, that could promise a breakthrough to the marketplace because of ease and low-cost of manufacturing.

These volumes contain the edited documents presented at the NATO-Sponsored Advanced Research Workshop (ARW) on Partial Pre8tre88ing, from Theory to Practice, held at the CEBTP Research Centre of Saint-Remy-Ies-Chevreuse, France, June 18-22, 1984. The workshop was a direct extension of the International Symposium on Nonlinearity and Continuity in Pre8tre88ed Concrete, organized by the editor at the University of Waterloo, Waterloo, Canada, July 4-6, 1983. The organization of the NATO-ARW on Partial Prestressing was prompted by the need to explain and reduce the wide dirrerences of expert oph: iipn. on the subject, which make more difficult the accep tance of partial prestressing by the profession at large. Specifically, the workshop attempted to: - produce a more unified picture of partial presetressing, by con fronting and, where possible, reconciling some conflicting American and European views on this subject; - bring theoretical advances on partial prestressing within the grasp of engineering practice; - provide the required background for developing some guidelines on the use of partial prestressing, in agreement with existing structural concrete standards. The five themes selected for the workshop agenda were: (1) Problems of Partially Prestressed Concrete (PPC). (2) Partially Prestressed Concrete Members: Static Loading. (3) PPC Members: Repeated and Dynamic Loadings. (4) Continuity in Partially Prestressed Concrete. (5) Practice of Partial Prestressing."

Multi-chip modules (MCMs) with high wiring density, controlled impedance interconnects, and thermal management capability have recently been developed to address the problems posed by advances in electronic systems that make demands for higher speeds and complexity. MCM-C/Mixed Technologies and Thick Film Sensors highlights recent advances in MCM-C technology. Developments in materials and processes which have led to increased interconnection density are reviewed: finer resolution thick film inks, high performance-low temperature dielectric tapes, precision via generation by both laser and mechanical methods, and enhanced screen printing technologies have given us feature resolution to the 50 mum line/space level. Thermal management has greatly benefitted from such new materials as cofire AIN and diamond. MCM-C technology is compatible with thick film sensors, and work is reviewed on environmental gas sensors, pressure and temperature sensors, and the development of novel materials in this area.

Throughout the 1980s and 1990s, the theory and practice of testing electronic products has changed considerably. Quality and testing have become inextricably linked and both are fundamental to the generation of revenue to a company, helping the company to remain profitable and therefore survive. Testing plays an important role in assessing the quality of a product. The tester acts as a filter, separating good products from bad. Unfortunately, the tester can pass bad products and fail good products, and the generation of high quality tests has become complex and time consuming. To achieve significant reduction in time and cost of testing, the role and responsibility of testing has to be considered across an entire organization and product development process. Testability Concepts for Digital ICs: The Macro Test Approach considers testability aspects for digital ICs. The strategy taken is to integrate the testability aspects into the design and manufacturing of ICs and, for each IC design project, to give a precise definition of the boundary conditions, responsibilities, interfaces and communications between persons, and quality targets. Macro Test, a design-for-Testability approach, provides a manageable test program route. Using the Macro Test approach, one can explore alternative solutions to satisfy pre-defined levels of performance (e.g. defect detection, defect location, test application) within a pre-defined cost budget and time scale. Testability Concepts for Digital ICs is the first book to present a tried and proven method of using a Macro approach to testing complex ICs and is of particular interest to all test engineers, IC designers and managers concerned with producing highquality ICs.

This proceedings volume presents selected and peer reviewed 50 reports of the 2015 International Conference on "Physics and Mechanics of New Materials and Their Applications" (Azov, Russia, 19-22 May, 2015), devoted to 100th Anniversary of the Southern Federal University, Russia. The book presents processing techniques, physics, mechanics, and applications of advanced materials. The book is concentrated on some nanostructures, ferroelectric crystals, materials and composites and other materials with specific properties. In this book are presented nanotechnology approaches, modern piezoelectric techniques, physical and mechanical studies of the structure-sensitive properties of the materials. A wide spectrum of mathematical and numerical methods is applied to the solution of different technological, mechanical and physical problems for applications. Great attention is devoted to novel devices with high accuracy, longevity and extended possibilities to work in a large scale of temperatures and pressure ranges, aggressive media, etc. The characteristics of materials and composites with improved properties is shown, and new possibilities in studying of various physico-mechanical processes and phenomena are demonstrated.

This is a concise introduction into optical fiber communication. It covers important aspects from the physics of optical wave propagation and amplification to the essentials of modulation formats and receivers. The combination of a solid coverage of necessary fundamental theory with an in-depth discussion of recent relevant research results enables the reader to design modern optical fiber communication systems. The book serves both graduate students and professionals. It includes many worked examples with solutions for lecturers. For the second edition, Reinhold Noe made many changes and additions throughout the text so that this concise book presents the essentials of optical fiber communication in an easy readable and understandable way.

In response to new developments in the field, practical teaching experience, and readers' suggestions, the authors of the warmly received Reliablity Evaluation of Engineering Systems have updated and extended the work-providing extended coverage of fault trees and a more complete examination of probability distribution, among other things-without disturbing the original's concept, structure, or style.

The field of solid state ionics is multidisciplinary in nature. Chemists, physicists, electrochimists, and engineers all are involved in the research and development of materials, techniques, and theoretical approaches. This science is one of the great triumphs of the second part of the 20th century. For nearly a century, development of materials for solid-state ionic technology has been restricted. During the last two decades there have been remarkable advances: more materials were discovered, modem technologies were used for characterization and optimization of ionic conduction in solids, trial and error approaches were deserted for defined predictions. During the same period fundamental theories for ion conduction in solids appeared. The large explosion of solid-state ionic material science may be considered to be due to two other influences. The first aspect is related to economy and connected with energy production, storage, and utilization. There are basic problems in industrialized countries from the economical, environmental, political, and technological points of view. The possibility of storing a large amount of utilizable energy in a comparatively small volume would make a number of non-conventional intermittent energy sources of practical convenience and cost. The second aspect is related to huge increase in international relationships between researchers and exchanges of results make considerable progress between scientists; one find many institutes joined in common search programs such as the material science networks organized by EEC in the European countries.

Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals.
Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries. They have assembled an international team of experts who present the current challenges, latest methods and new applications for producing these materials necessary for the electronics industry using bulk crystal growth technology.
From the contents:
* General aspects of crystal growth technology
* Compound semiconductors
* Halides and oxides
* Crystal growth for sustaining energy
* Crystal machining

This volume of the Handbook is the first of a two-volume set of reviews devoted to the rare-earth-based high-temperature oxide superconductors (commonly known as hiTC superconductors). The history of hiTC superconductors is a few months short of being 14 years old when Bednorz and Muller published their results which showed that (La, BA)2CuO4 had a superconducting transition of ~30 K, which was about 7K higher than any other known superconducting material. Within a year the upper temperature limit was raised to nearly 100K with the discovery of an ~90K superconducting transition in YBa2Cu3O7-&dgr;. The announcement of a superconductor with a transition temperature higher than the boiling point of liquid nitrogen set-off a frenzy of research on trying to find other oxide hiTC superconductors. Within a few months the maximum superconducting transition reached 110 K (Bi2Sr2Ca2Cu3010, and then 122K (TlBa2Ca3Cu4O11. It took several years to push TC up another 11 K to 133 K with the discovery of superconductivity in HgBa2Ca2Cu3O8, which is still the record holder today.

Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.

High-Temperature Cuprate Superconductors provides an up-to-date and comprehensive review of the properties of these fascinating materials. The essential properties of high-temperature cuprate superconductors are reviewed on the background of their theoretical interpretation. The experimental results for structural, magnetic, thermal, electric, optical and lattice properties of various cuprate superconductors are presented with respect to relevant theoretical models. A critical comparison of various theoretical models involving strong electron correlations, antiferromagnetic spin fluctuations, phonons and excitons provides a background for understanding of the mechanism of high-temperature superconductivity. Recent achievements in their applications are also reviewed. A large number of illustrations and tables gives valuable information for specialists. A text-book level presentation with formulation of a general theory of strong-coupling superconductivity will help students and researches to consolidate their knowledge of this remarkable class of materials.

MEMS Vibratory Gyroscopes provides a solid foundation in the theory and fundamental operational principles of micromachined vibratory rate gyroscopes, and introduces structural designs that provide inherent robustness against structural and environmental variations. In the first part, the dynamics of the vibratory gyroscope sensing element is developed, common micro-fabrication processes and methods commonly used in inertial sensor production are summarized, design of mechanical structures for both linear and torsional gyroscopes are presented, and electrical actuation and detection methods are discussed along with details on experimental characterization of MEMS gyroscopes. In the second part, design concepts that improve robustness of the micromachined sensing element are introduced, supported by constructive computational examples and experimental results illustrating the material.

Provides a comprehensive guide to measurements with lasers Examines the design of optical and laser-based instruments Reviews the development of measurement strategies Includes two new chapters on self-mixing interferometry and quantum sensing Includes end of chapter problems

Solid-State Imaging with Charge-Coupled Devices covers the complete imaging chain: from the CCD's fundamentals to the applications. The book is divided into four main parts: the first deals with the basics of the charge-coupled devices in general. The second explains the imaging concepts in close relation to the classical television application. Part three goes into detail on new developments in the solid-state imaging world (light sensitivity, noise, device architectures), and part four rounds off the discussion with a variety of applications and the imager technology. The book is a reference work intended for all who deal with one or more aspects of solid- state imaging: the educational, scientific and industrial world. Graduates, undergraduates, engineers and technicians interested in the physics of solid-state imagers will find the answers to their imaging questions. Since each chapter concludes with a short section Worth Memorizing', reading this short summary allows readers to continue their reading without missing the main message from the previous section.

Nanoimprint Lithography: An enabling process for nanofabrication presents a comprehensive description of nanotechnology that is one of the most promising low-cost, high-throughput technologies for manufacturing nanostructures, and an emerging lithography candidates for 22, 16 and 11 nm nodes. It provides the exciting, multidisciplinary field, offering a wide range of topics covering: principles, process, material and application. This book would be of specific interest for researchers and graduate students in the field of nanoscience, nanotechnology and nanofabrication, material, physical, chemical, electric engineering and biology. Dr. Weimin Zhou is an associate professor at Shanghai Nanotechnology Promotion Center, China.

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures-including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials-this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas."

This book is aims to be a comprehensive source on the physics and engineering of magneto-resistive heads. Most of the material is presented in a nonmathematical manner to make it more digestible for researchers, students, developers, and engineers.
In addition to revising and updating material available in the first edition, Mallinson has added nine new chapters dealing with various aspects concerning spin valves, the electron spin tunneling effect, the electrostatic discharge effects, read amplifiers, and signal-to-noise ratios, making this a completely up-to-date reference.
The previous edition of Magneto-Resistive Heads was the first volume in the new Academic Press series in Electromagnetism edited by Professor Isaak Mayergoyz, who is a well-recognized expert in the field.

This volume provides a complete understanding of the fundamental causes of routing congestion in present-day and next-generation VLSI circuits, offers techniques for estimating and relieving congestion, and provides a critical analysis of the accuracy and effectiveness of these techniques. The book includes metrics and optimization techniques for routing congestion at various stages of the VLSI design flow. The subjects covered include an explanation of why the problem of congestion is important and how it will trend, plus definitions of metrics that are appropriate for measuring congestion, and descriptions of techniques for estimating and optimizing routing congestion issues in cell-/library-based VLSI circuits.