Formal Verification: An Essential Toolkit for Modern VLSI Design, Second Edition presents practical approaches for design and validation, with hands-on advice to help working engineers integrate these techniques into their work. Formal Verification (FV) enables a designer to directly analyze and mathematically explore the quality or other aspects of a Register Transfer Level (RTL) design without using simulations. This can reduce time spent validating designs and more quickly reach a final design for manufacturing. Building on a basic knowledge of SystemVerilog, this book demystifies FV and presents the practical applications that are bringing it into mainstream design and validation processes. New sections cover advanced techniques, and a new chapter, The Road To Formal Signoff, emphasizes techniques used when replacing simulation work with Formal Verification. After reading this book, readers will be prepared to introduce FV in their organization to effectively deploy FV techniques that increase design and validation productivity.

This book covers the topic of vibration energy harvesting using piezoelectric materials. Piezoelectric materials are analyzed in the context of their electromechanical coupling, heterogeneity, microgeometry and interrelations between electromechanical properties. Piezoelectric ceramics and composites based on ferroelectrics are advanced materials that are suitable for harvesting mechanical energy from vibrations using inertial energy harvesting which relies on the resistance of a mass to acceleration and kinematic energy harvesting which couples the energy harvester to the relative movement of different parts of a source. In addition to piezoelectric materials, research efforts to develop optimization methods for complex piezoelectric energy harvesters are also reviewed. The book is important for specialists in the field of modern advanced materials and will stimulate new effective piezotechnical applications.

As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.

This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. * Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; * Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; * Provides both theoretical analysis and practical examples to illustrate design methodologies; * Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Using the nano metric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nano scale interfaces separating regions of differently oriented spontaneous polarization. Due to the local symmetry-breaking caused by the change in polarization, domain walls are found to possess an unexpected lateral piezoelectric response, even when this is symmetry-forbidden in the parent material. This has interesting potential applications in electromechanical devices based on ferroelectric domain patterning. Moreover, electrical conduction is shown to arise at domain walls in otherwise insulating lead zirconate titanate, the first such observation outside of multiferroic bismuth ferrite, due to the tendency of the walls to localize defects. The role of defects is then explored in the theoretical framework of disordered elastic interfaces possessing a characteristic roughness scaling and complex dynamic response. It is shown that the heterogeneous disorder landscape in ferroelectric thin films leads to a breakdown of the usual self-affine roughness, possibly related to strong pinning at individual defects. Finally, the roles of varying environmental conditions and defect densities in domain switching are explored and shown to be adequately modelled as a competition between screening effects and pinning.

This book reviews the current state-of-the art of single layer silicene up to thicker silicon nanosheets, and their structure, properties and potential applications. Silicene is a newly discovered material that is one atomic layer think. It is a two-dimensional (2D) nanomaterial that is classified as a nanosheet, which has large lateral dimensions up to micrometres, but thicknesses of only nanometres or less. Silicon nanosheets are currently a very 'hot' area of research. The unique properties and morphology of such materials make them ideal for a variety of applications, including electronic devices, batteries and sensors. 2D nanosheets of silicon can be considered as analogues of graphene. As silicon is already the major component of electronic devices, the significance of nanosheets composed of silicon is that they can be more easily integrated into existing electronic devices. Furthermore, if 2D nanostructured Si can be implemented into such devices, then their size could be reduced into the nano-regime, providing unique properties different from bulk Si that is currently employed. The book is written for researchers and graduate students.

Nonlinear optical (NLO) phenomena such as frequency conversion have played a key role in the development of photonic technologies. This thesis reports a detailed study of the molecular response of a large variety of push-pull organic compounds using the Second Harmonic Generation technique, which will serve as a starting point for the investigation at the macroscopic scale of azobenzene-based liquid crystalline polymeric films and their blends with highly efficient NLO
chromophores. These materials are designed with the aim of exploiting their photoadressability in order to tailor their nonlinear behaviour. The magnitude and symmetry of their NL response was successfully controlled via light irradiation and thermal treatments. Moreover, as a specific application, the recording of efficient NLO gratings was achieved.

This work provides a comprehensive discussion of the bias dependence of equivalent circuit parameters for the three devices and an extensive discussion of temperature dependence. It: covers recess-etched MESFETs and self-aligned MESFETs with and without lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP lattice-matched HEMT equivalent circuits; and describes a large-signal, temperature-dependent model extractor for A1GaAs-GaAs HBTs. The book is intended for circuit designers, process and device developers and test engineers.

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Some years ago, silicon-based mechanical sensors, like pressure sensors, accelerometers and gyroscopes, started their successful advance. Every year, hundreds of millions of these devices are sold, mainly for medical and automotive applications. The airbag sensor on which research already started several decades ago at Stanford University can be found in every new car and has saved already numerous lives. Pressure sensors are also used in modern electronic blood pressure equipment. Many other mechanical sensors, mostly invisible to the public, perform useful functions in countless industrial and consumer products.

The underlying physics and technology of silicon-based mechanical sensors is rather complex and is treated in numerous publications scattered throughout the literature. Therefore, a clear need existed for a handbook that thoroughly and systematically reviews the present basic knowledge on these devices.

After a short introduction, Professor Bao discusses the main issues relevant to silicon-based mechanical sensors. First a thorough treatment of stress and strain in diaphragms and beams is presented. Next, vibration of mechanical structures is illuminated, followed by a chapter on air damping. These basic chapters are then succeeded by chapters in which capacitive and piezoresistive sensing techniques are amply discussed. The book concludes with chapters on commercially available pressure sensors, accelerometers and resonant sensors in which the above principles are applied.

Everybody, involved in designing silicon-based mechanical sensors, will find a wealth of useful information in the book, assisting the designer in obtaining highly optimized devices.

This book demonstrates how the new phenomena in superconductivity on the nanometer scale (FFLO state, triplet superconductivity, Crossed Andreev Reflection, synchronized generation etc.) serve as the basis for the invention and development of novel nanoelectronic devices and systems. It demonstrates how rather complex ideas and theoretical models, like odd-pairing, non-uniform superconducting state, pi-shift etc., adequately describe the processes in real superconducting nanostructues and novel devices based on them. The book is useful for a broad audience of readers, researchers, engineers, PhD-students, lectures and others who would like to gain knowledge in the frontiers of superconductivity at the nanoscale.

The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes. The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions. Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

To control mechanical processes one needs to obtain information about the state of the system, to process the information, and then to act on the results. Originally, the simplest controls were purely mechanical feedback systems; more complex systems required human intervention. At present, most controls are provided by purely electromechanical systems, but there are also many situations in which one needs sophisticated measurements for later analysis.

Developments in electronic information processing have over the past few decades far outpaced the developments in the sensors and actuators that provide the input and output of the control systems; as a result, the transducers account for the major part of the expense, mass, and failure points of many modern machines. Improvements in control systems thus depend on a clear and thorough understanding of the principles of transducers. It is the aim of this book to help meet that need. Unlike other treatments of sensors or actuators, this book approaches the devices from the point of view of the fundamental coupling mechanism between the electrical and mechanical behavior. Thus, for example, a solenoid can b used either to detect horizontal motion and position (i.e. as a sensor), or to impose a motion on a piston (i.e. as an actuator); the principles of operation of the solenoid are the same in both cases, and this book thus treats them together.

The book begins with a discussion of systems analysis as a tool for modeling transducers. It then turns to a detailed discussion of transduction mechanisms (electric and magnetic fields, piezo- and pyro-electric effects, electromagnetic induction, and so forth). The book concludes with an input/output analysis of transducers.

This book presents the current knowledge about nonlinear localized travelling excitations in crystals. Excitations can be vibrational, electronic, magnetic or of many other types, in many different types of crystals, as silicates, semiconductors and metals. The book is dedicated to the British scientist FM Russell, recently turned 80. He found 50 years ago that a mineral mica muscovite was able to record elementary charged particles and much later that also some kind of localized excitations, he called them quodons, was also recorded. The tracks, therefore, provide a striking experimental evidence of quodons existence. The first chapter by him presents the state of knowledge in this topic. It is followed by about 18 chapters from world leaders in the field, reviewing different aspects, materials and methods including experiments, molecular dynamics and theory and also presenting the latest results. The last part includes a personal narration of FM Russell of the deciphering of the marks in mica. It provides a unique way to present the science in an accessible way and also illustrates the process of discovery in a scientist's mind.

This book provides a comprehensive introduction to integrated optical waveguides for information technology and data communications. Integrated coverage ranges from advanced materials, fabrication, and characterization techniques to guidelines for design and simulation. A concluding chapter offers perspectives on likely future trends and challenges. The dramatic scaling down of feature sizes has driven exponential improvements in semiconductor productivity and performance in the past several decades. However, with the potential of gigascale integration, size reduction is approaching a physical limitation due to the negative impact on resistance and inductance of metal interconnects with current copper-trace based technology. Integrated optics provides a potentially lower-cost, higher performance alternative to electronics in optical communication systems. Optical interconnects, in which light can be generated, guided, modulated, amplified, and detected, can provide greater bandwidth, lower power consumption, decreased interconnect delays, resistance to electromagnetic interference, and reduced crosstalk when integrated into standard electronic circuits. Integrated waveguide optics represents a truly multidisciplinary field of science and engineering, with continued growth requiring new developments in modeling, further advances in materials science, and innovations in integration platforms. In addition, the processing and fabrication of these new devices must be optimized in conjunction with the development of accurate and precise characterization and testing methods. Students and professionals in materials science and engineering will find "Advanced Materials for Integrated Optical Waveguides" to be an invaluable reference for meeting these research and development goals.

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

With the advent of portable and autonomous computing systems, power con sumption has emerged as a focal point in many research projects, commercial systems and DoD platforms. One current research initiative, which drew much attention to this area, is the Power Aware Computing and Communications (PAC/C) program sponsored by DARPA. Many of the chapters in this book include results from work that have been supported by the PACIC program. The performance of computer systems has been tremendously improving while the size and weight of such systems has been constantly shrinking. The capacities of batteries relative to their sizes and weights has been also improv ing but at a rate which is much slower than the rate of improvement in computer performance and the rate of shrinking in computer sizes. The relation between the power consumption of a computer system and it performance and size is a complex one which is very much dependent on the specific system and the technology used to build that system. We do not need a complex argument, however, to be convinced that energy and power, which is the rate of energy consumption, are becoming critical components in computer systems in gen eral, and portable and autonomous systems, in particular. Most of the early research on power consumption in computer systems ad dressed the issue of minimizing power in a given platform, which usually translates into minimizing energy consumption, and thus, longer battery life."

The exponential growth of the number of internet nodes has suddenly created a widespread demand for high-speed optical and electronic devices, circuits, and systems. The new optical revolution has replaced modular, general-purpose building blocks by end-to-end solutions. Greater levels of integration on a single chip enable higher performance and lower cost. The mainstream VLSI technologies such as BiCmos and CMOS continue to take over the territories thus far claimed by GaAs and InP devices. This calls for an up-to-date book describing the design of high-speed electronic circuits for optical communication using modern techniques in a low-cost CMOS process. High-Speed CMOS Circuits for Optical Receivers covers the design of the world's first and second 10 Gb/s clock and data recovery circuits fabricated in a pure CMOS process. The second prototype meets some of the critical requirements recommended by the SONET OC-192 standard. The clock and data recovery circuits consume a power several times lower than in prototypes built in other fabrication processes. High-Speed CMOS Circuits for Optical Receivers describes novel techniques for implementation of such high-speed, high-performance circuits in a pure CMOS process. High-Speed CMOS Circuits for Optical Receivers is written for researchers and students interested in high-speed and mixed-mode circuit design with focus on CMOS circuit techniques. Designers working on various high-speed circuit projects for data communication, including optical com., giga bit ethernet will also find it of interest.

This volume starts with a description of the metrics and benchmarks used to design energy-efficient microprocessor systems, followed by energy-efficient methodologies for the architecture and circuit design, DC-DC conversion, energy-efficient software and system integration.

This book reviews the structure and electronic, magnetic, and other properties of various MoS2 (Molybdenum disulfide) nanostructures, with coverage of synthesis, Valley polarization, spin physics, and other topics. MoS2 is an important, graphene-like layered nano-material that substantially extends the range of possible nanostructures and devices for nanofabrication. These materials have been widely researched in recent years, and have become an attractive topic for applications such as catalytic materials and devices based on field-effect transistors (FETs) and semiconductors.

Chapters from leading scientists worldwide create a bridge between MoS2 nanomaterials and fundamental physics in order to stimulate readers' interest in the potential of these novel materials for device applications. Since MoS2 nanostructures are expected to be increasingly important for future developments in energy and other electronic device applications, this book can be recommended for Physics and Materials Science and Engineering departments and as reference for researchers in the field.

Gaining public attention due, in part, to their potential application as energy storage devices in cars, Lithium-ion batteries have encountered widespread demand, however, the understanding of lithium-ion technology has often lagged behind production. This book defines the most commonly encountered challenges from the perspective of a high-end lithium-ion manufacturer with two decades of experience with lithium-ion batteries and over six decades of experience with batteries of other chemistries. Authors with years of experience in the applied science and engineering of lithium-ion batteries gather to share their view on where lithium-ion technology stands now, what are the main challenges, and their possible solutions. The book contains real-life examples of how a subtle change in cell components can have a considerable effect on cell's performance. Examples are supported with approachable basic science commentaries. Providing a unique combination of practical know-how with an in-depth perspective, this book will appeal to graduate students, young faculty members, or others interested in the current research and development trends in lithium-ion technology.

This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author's work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of "epi-grade" 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore's law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.

This thesis demonstrates the novel magnetic functionalities in cyanido-bridged metal assemblies, and as such appeals to readers in the field of materials science. The utilization of octacyanidometalates as building blocks enables the observation of (i) photo-induced magnetization due to a light-induced spin-crossover in an iron octacyanidoniobate-based assembly, (ii) photo-induced magnetization with a two-step spin-crossover behavior in an iron octacyanidoniobate-based material, and (iii) the coexistence of super-ionic conductivity and metamagnetism in a manganese-octacyanoniobate system. These multi-functionalities are achieved by incorporating a spin-crossover moiety or a hydrogen-bonding network into a cyanido-bridged network structure with a strong magnetic interaction. In particular, in light-induced spin-crossover magnets, a magnetically non-ordered state can be altered to a magnetically ordered state by photo-irradiation, which is one of the attractive mechanisms for novel optical switching devices.