This book is focused on the study of physical mechanisms and device design for achieving high-performance infrared photodetection based on low-dimensional materials. Through theory analysis, material characterization and photo-electric measurements, it provides solutions to the trade-off problems which are commonly encountered in traditional infrared photodetectors and presents novel methods to improve the responsivity, detectivity and response speed. Researchers and scientists in the field of opto-electronic device can benefit from the book.

Presents information in a user-friendly, easy-access way so that the book can act as either a quick reference for more experienced engineers or as an introductory guide for new engineers and college graduates.

Fundamentals of Switching Theory and Logic Design discusses the basics of switching theory and logic design from a slightly alternative point of view and also presents links between switching theory and related areas of signal processing and system theory. Switching theory is a branch of applied mathematic providing mathematical foundations for logic design, which can be considered as a part of digital system design concerning realizations of systems whose inputs and outputs are described by logic functions.

Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.

This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal-semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors. Detailed attention is paid to advanced and futuristic materials. In addition, clear explanations are provided of, for example, electron theories, high-field effects, the Hall effect, transit-time effects, drift and diffusion, breakdown mechanisms, equilibrium and transient conditions, switching, and biasing. The book is designed to meet the needs of undergraduate engineering students and will also be very useful for postgraduate students; it will assist in preparation for examinations at colleges and universities and for other examinations in engineering. Practice questions are therefore presented in both essay and multiple choice format, and many solved examples and unsolved problems are included.

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

In conventional metals, various transport coefficients are scaled according to the quasiparticle relaxation time, \tau, which implies that the relaxation time approximation (RTA) holds well. However, such a simple scaling does not hold in many strongly correlated electron systems, reflecting their unique electronic states. The most famous example would be cuprate high-Tc superconductors (HTSCs), where almost all the transport coefficients exhibit a significant deviation from the RTA results. To better understand the origin of this discrepancy, we develop a method for calculating various transport coefficients beyond the RTA by employing field theoretical techniques. Near the magnetic quantum critical point, the current vertex correction (CVC), which describes the electron-electron scattering beyond the relaxation time approximation, gives rise to various anomalous transport phenomena. We explain anomalous transport phenomena in cuprate HTSCs and other metals near their magnetic or orbital quantum critical point using a uniform approach. We also discuss spin related transport phenomena in strongly correlated systems. In many d- and f-electron systems, the spin current induced by the spin Hall effect is considerably greater because of the orbital degrees of freedom. This fact attracts much attention due to its potential application in spintronics. We discuss various novel charge, spin and heat transport phenomena in strongly correlated metals.

Solid State Lighting Reliability: Components to Systems begins with an explanation of the major benefits of solid state lighting (SSL) when compared to conventional lighting systems including but not limited to long useful lifetimes of 50,000 (or more) hours and high efficacy. When designing effective devices that take advantage of SSL capabilities the reliability of internal components (optics, drive electronics, controls, thermal design) take on critical importance. As such a detailed discussion of reliability from performance at the device level to sub components is included as well as the integrated systems of SSL modules, lamps and luminaires including various failure modes, reliability testing and reliability performance. A follow-up, Solid State Lighting Reliability Part 2, was published in 2017.

Dynamic Fracture of Piezoelectric Materials focuses on the Boundary Integral Equation Method as an efficient computational tool. The presentation of the theoretical basis of piezoelectricity is followed by sections on fundamental solutions and the numerical realization of the boundary value problems. Two major parts of the book are devoted to the solution of problems in homogeneous and inhomogeneous solids. The book includes contributions on coupled electro-mechanical models, computational methods, its validation and the simulation results, which reveal different effects useful for engineering design and practice. The book is self-contained and well-illustrated, and it serves as a graduate-level textbook or as extra reading material for students and researchers.

Porous Semiconductors: Optical Properties and Applications provides an examination of porous semiconductor materials. Beginning with a description of the basic electrochemistry of porous semiconductors and the different kinds of porous semiconductor materials that can be fabricated, the book moves on to describe the fabrication processes used in the production of porous semiconductor optical components. Concluding the text, a number of optical components based on porous semiconductor materials are discussed in depth.

Porous Semiconductors: Optical Properties and Applications provides a thorough grounding in the design, fabrication and theory behind the optical applications of porous semiconductor materials for graduate and undergraduate students interested in optics, photonics, MEMS, and material science. The book is also a valuable reference for scientists, researchers, and engineers in the field of optics and materials science.

John Morton offers a uniquely concise and practical guide to getting up and running with the PIC Microcontroller. The PIC is one of the most popular of the microcontrollers that are transforming electronic project work and product design, and this book is the ideal introduction for students, teachers, technicians and electronics enthusiasts.
Assuming no prior knowledge of microcontrollers and introducing the PIC Microcontroller's capabilities through simple projects, this book is ideal for electronics hobbyists, students, school pupils and technicians. The step-by-step explanations and the useful projects make it ideal for student and pupil self-study: this is not just a reference book - you start work with the PIC microcontroller straight away.
The revised third edition focuses entirely on the re-programmable flash PIC microcontrollers such as the PIC16F54, PIC16F84 and the extraordinary 8-pin PIC12F508 and PIC12F675 devices.
* Demystifies the leading microcontroller for students, engineers an hobbyists
* Emphasis on putting the PIC to work, not theoretical microelectronics
* Simple programs and circuits introduce key features and commands through project work

"This book focuses on the exciting topic on self-organized organic semiconductors - from materials to device applications. It offers up-to-date and accessible coverage of self-organized semiconductors for organic chemistry, polymer science, liquid crystals, materials science, material engineering, electrical engineering, chemical engineering, optics, optic-electronics, nanotechnology and semiconductors. Chapters cover chemistry, physics, processing, and characterization. The applications include photovoltaics, light-emitting diodes (LEDs), and transistors"--

This book focuses on the development of liquid crystal displays (LCDs) and liquid crystal materials (LCs) in Japan. The Committee of Organic Materials Research for Information Sciences of the Japan Society for the Promotion of Science (JSPS) planned the book to document essential LCD innovations and developments since the beginnings of the field-effect LCD technology in 1970. The book illustrates the remarkable effort and progress behind those flat, lightweight, and high-information-content LCDs that have become the indispensable human-machine interface for virtually all electronic devices. In contrast to other publications on this topic, the book illustrates the interdisciplinary character of the LCD technology and its crucial importance for technological progress of the field far beyond displays. It also gives insights into breakthrough innovations not revealed in other publications. Moreover, prospects for the development of LC research toward new fields of applications are provided. In line with its interdisciplinary character, the book targets researchers in basic science as well as engineers and researchers in industry.

This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3C-SiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this polytype could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Written by leading international experts, this book summarizes the advances in sample preparation, design and construction of dangling bond atomic scale wires and logic gate circuits at the surface of a passivated semi-conductor. Individual chapters cover different aspects of the sample fabrication from research and development point of view, present design and construction as well as microscopic and spectroscopic characteristics of single dangling atomic wires and logic gates, and discuss the tools for design of large atomic scale circuit on a surface.This edited volume includes selected contributions from the "International Workshop on Atomic Wires" held in Krakow in September 2014 completed and updated with most current results up to mid-2016, and offers for the first time an overview of up-to-date knowledge in the burgeoning field of atomic scale circuits. The book will appeal to researchers and scholars interested in nanoscience and its various sub-fields including, in particular, molecular electronics, atomic scale electronics and nanoelectronics.

Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.

This book presents a new filter design approach and concentrates on the circuit techniques that can be utilized when designing continuous-time low-pass filters in modern ultra-deep-submicron CMOS technologies for integrated wideband radio receivers. Coverage includes system-level issues related to the design and implementation of a complete single-chip radio receiver and related to the design and implementation of a filter circuit as a part of a complete single-chip radio receiver.

Presents a new filter design approach, emphasizing low-voltage circuit solutions that can be implemented in modern, ultra-deep-submicron CMOS technologies;Includes filter circuit implementations designed as a part of a single-chip radio receiver in modern 1.2V 0.13um and 65nm CMOS;Describes design and implementation of a continuous-time low-pass filter for a multicarrier WCDMA base-station;Emphasizes system-level considerations throughout.

Harmonically modulated luminescence combines the advantages of highly sensitive luminescence metrology with an immediate dynamic access to carrier lifetime in semiconductors at a minimum of required a priori information. The present work covers theoretical, conceptual, and experimental advances of the harmonically modulated luminescence technique. Theoretical constraints of dynamic carrier lifetime techniques are rigorously elaborated, including the proof of their differential nature and their characteristics at nonuniform spatial distributions of recombination rate. The pathway toward a unified, reliable, and versatile harmonically modulated carrier lifetime metrology is delineated - covering the entire solar cell production chain from bare ingots to finished solar cells. Accurate access to miscellaneous relevant recombination and transport properties via harmonically modulated luminescence is demonstrated and experimentally validated, embracing injection-dependent carrier lifetimes at extremely low injection conditions, a spatially resolved carrier lifetime calibration of luminescence images, and accurate approaches to both net dopant concentration and minority carrier mobility.

This text on the electrical, optical, magnetic, and thermal properties of materials stresses concepts rather than mathematical formalism. Suitable for advanced undergraduates, it is intended for materials and electrical engineers who want to gain a fundamental understanding of alloys, semiconductor devices, lasers, magnetic materials, and so forth. The book is organized to be used in a one-semester course; to that end each section of applications, after the introduction to the fundamentals of electron theory, can be read independently of the others. Many examples from engineering practice serve to provide an understanding of common devices and methods. Among the modern applications covered are: high-temperature superconductors, optoelectronic materials, semiconductor device fabrication, xerography, magneto-optic memories, and amorphous ferromagnetics. The fourth edition has been revised and updated with an emphasis on the applications sections, which now cover devices of the next generation of electronics.