This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

This book exhibits novel semiconductor black phosphorous (BP) materials that are developed beyond other 2D materials (graphene and TMDs). It accurately reviews their manufacture strategies, properties, characterization techniques and different utilizations of BP-based materials. It clarifies all perspectives alongside down to earth applications which present a future direction in the biomedical, photo, environmental, energy, and other related fields. Hence, the sections accentuate the basic fundamentals, synthesis, properties, applications, state-of-the-art studies about the BP-based materials through detailed reviews. This book is the result of commitments by numerous experts in the field from various backgrounds and expertise. It will appeal to researchers, scientists and in addition understudies from various teaches, for example, semiconductor innovation, energy and environmental science. The book content incorporates industrial applications and fills the gap between the exploration works in the lab and viable applications in related ventures.

ESC is the premature initiation of cracking and embrittlement of a plastic due to the simultaneous action of stress and strain and contact with specific fluids. This definition provides the key to the problem of predictability. Failure is due to a combination of influences, which would not cause the same problems if encountered individually.
Approximately 15% of all failures of plastics components in service are caused by ESC. Such failures may be costly or life threatening, and consequently the phenomenon has been the subject of intensive research for more than 40 years. This research has revealed a great deal about the casual mechanism, but has not yet brought us to the ideal position of being able to predict and prevent the occurrence of ESC in all situations.

Less than a decade ago, lead halide perovskite semiconductors caused a sensation: Solar cells exhibiting astonishingly high levels of efficiency. Recently, it became possible to synthesize nanocrystals of this material as well. Interestingly; simply by controlling the size and shape of these crystals, new aspects of this material literally came to light. These nanocrystals have proven to be interesting candidates for light emission. In this thesis, the recombination, dephasing and diffusion of excitons in perovskite nanocrystals is investigated using time-resolved spectroscopy. All these dynamic processes have a direct impact on the light-emitting device performance from a technology point of view. However, most importantly, the insights gained from the measurements allowed the author to modify the nanocrystals such that they emitted with an unprecedented quantum yield in the blue spectral range, resulting in the successful implementation of this material as the active layer in an LED. This represents a technological breakthrough, because efficient perovskite light emitters in this wavelength range did not exist before.

This book addresses the rapidly developing class of solar cell materials and designed to provide much needed information on the fundamental principles of these materials, together with how these are employed in photovoltaic applications. A special emphasize have been given for the space applications through study of radiation tolerant solar cells. This book present a comprehensive research outlining progress on the synthesis, fabrication and application of solar cells from fundamental to device technology and is helpful for graduate students, researchers, and technologists engaged in research and development of materials.

This textbook, now in its third edition, provides a formative introduction to the structure of matter that will serve as a sound basis for students proceeding to more complex courses, thus bridging the gap between elementary physics and topics pertaining to research activities. The focus is deliberately limited to key concepts of atoms, molecules and solids, examining the basic structural aspects without paying detailed attention to the related properties. For many topics the aim has been to start from the beginning and to guide the reader to the threshold of advanced research. This edition includes four new chapters dealing with relevant phases of solid matter (magnetic, electric and superconductive) and the related phase transitions. The book is based on a mixture of theory and solved problems that are integrated into the formal presentation of the arguments. Readers will find it invaluable in enabling them to acquire basic knowledge in the wide and wonderful field of condensed matter and to understand how phenomenological properties originate from the microscopic, quantum features of nature.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

More than 1,100 TEM images illustrate the science of ULSI

The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems.

The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts:

• Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation
• Part II focuses on key ULSI modules—ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization
• Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development
• Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics

This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with:

• More than 1,100 TEM images to illustrate the science of ULSI
• A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues
• Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs

This book discusses the mechanisms of electric conductivity in various ionic liquid systems (protic, aprotic as well as polymerized ionic liquids). It hence covers the electric properties of ionic liquids and their macromolecular counterpanes, some of the most promising materials for the development of safe electrolytes in modern electrochemical energy devices such as batteries, super-capacitors, fuel cells and dye-sensitized solar cells. Chapter contributions by the experts in the field discuss important findings obtained using broadband dielectric spectroscopy (BDS) and other complementary techniques. The book is an excellent introduction for readers who are new to the field of dielectric properties of ionic conductors, and a helpful guide for every scientist who wants to investigate the interplay between molecular structure and dynamics in ionic conductors by means of dielectric spectroscopy.

This two-part book puts the spotlight on how a real-time kernel works using Micrium's C/OS-III kernel as a reference. Part I includes an overview of the operation of real-time kernels, and walks through various aspects of C/OS-III implementation and usage. Part II provides application examples (using the versatile Renesas YRDKRX62N Evaluation Board, available separately) that enable readers to rapidly develop their own prototypes. This book is written for serious embedded systems programmers, consultants, hobbyists, and students interested in understanding the inner workings of a real-time kernel. C/OS-III is not just a great learning platform, but also a full commercial-grade software package, ready to be part of a wide range of products. C/OS-III is a highly portable, ROMable, scalable, preemptive real-time, multitasking kernel designed specifically to address the demanding requirements of today 's embedded systems. C/OS-III is the successor to the highly popular C/OS-II real-time kernel but can use most of C/OS-II 's ports with minor modifications. Some of the features of C/OS-III are:

Preemptive multitasking with round-robin scheduling of tasks at the same priority
Supports and unlimited number of tasks and other kernel objects
Rich set of services: semaphores, mutual exclusion semaphores with full priority inheritance, event flags, message queues, timers, fixed-size memory block management, and more.
Built-in performance measurements

This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

The release of this second volume of CHIPS 2020 coincides with the 50th anniversary of Moore's Law, a critical year marked by the end of the nanometer roadmap and by a significantly reduced annual rise in chip performance. At the same time, we are witnessing a data explosion in the Internet, which is consuming 40% more electrical power every year, leading to fears of a major blackout of the Internet by 2020. The messages of the first CHIPS 2020, published in 2012, concerned the realization of quantum steps for improving the energy efficiency of all chip functions. With this second volume, we review these messages and amplify upon the most promising directions: ultra-low-voltage electronics, nanoscale monolithic 3D integration, relevant-data, brain- and human-vision-inspired processing, and energy harvesting for chip autonomy. The team of authors, enlarged by more world leaders in low-power, monolithic 3D, video, and Silicon brains, presents new vistas in nanoelectronics, promising Moore-like exponential growth sustainable through to the 2030s.

This book presents the first experiment revealing several unexplored non-equilibrium properties of quantum many-body states, and addresses the interplay between the Kondo effect and superconductivity by probing shot noise. In addition, it describes in detail nano-fabrication techniques for carbon nanotube quantum dots, and a measurement protocol and principle that probes both equilibrium and non-equilibrium quantum states of electrons. The book offers various reviews of topics in mesoscopic systems: shot noise measurement, carbon nanotube quantum dots, the Kondo effect in quantum dots, and quantum dots with superconducting leads, which are relevant to probing non-equilibrium physics. These reviews offer particularly valuable resources for readers interested in non-equilibrium physics in mesoscopic systems. Further, the cutting-edge experimental results presented will allow reader to catch up on a vital new trend in the field.

This book presents an overview of material-specific factors that influence Tc and give rise to diverse Tc values for copper oxides and iron-based high- Tc superconductors on the basis of more than 25 years of experimental data, to most of which the author has made important contributions. The book then explains why both compounds are distinct from others with similar crystal structure and whether or not one can enhance Tc, which in turn gives a hint on the unresolved pairing mechanism. This is an unprecedented new approach to the problem of high-temperature superconductivity and thus will be inspiring to both specialists and non-specialists interested in this field. Readers will receive in-depth information on the past, present, and future of high-temperature superconductors, along with special, updated information on what the real highest Tc values are and particularly on the possibility of enhancing Tc for each member material, which is important for application. At this time, the highest Tc has not been improved for 20 years, and no new superconductors have been discovered for 5 years. This book will encourage researchers as well as graduate-course students not to give up on the challenges in the future of high- Tc superconductivity.

Failure Mechanisms in Semiconductor Devices Second Edition E. Ajith Amerasekera Texas Instruments Inc., Dallas, USA Farid N. Najm University of Illinois at Urbana-Champaign, USA Since the successful first edition of Failure Mechanisms in Semiconductor Devices, semiconductor technology has become increasingly important. The high complexity of today's integrated circuits has engendered a demand for greater component reliability. Reflecting the need for guaranteed performance in consumer applications, this thoroughly updated edition includes more detailed material on reliability modelling and prediction. The book analyses the main failure mechanisms in terms of cause, effects and prevention and explains the mathematics behind reliability analysis. The authors detail methodologies for the identification of failures and describe the approaches for building reliability into semiconductor devices. Their thorough yet accessible text covers the physics of failure mechanisms from the semiconductor die itself to the packaging and interconnections. Incorporating recent advances, this comprehensive survey of semiconductor reliability will be an asset to both engineers and graduate students in the field.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Key Features
* First book on the extremely fashionable subject
* Adopts an original approach to the subject
* TImely book in a field making significant progress
* Introduces new optical tools for solid state physics with wide technological potential
* Important applications are to be expected for information storage, isotopic fiber-optics, and tunable solid state lasers, isotopic optoelectronics, as well as neutron transmutation doping
* Accessible to physics, chemists, electronic engineers, and materials scientists
* Contents based on recent theoretical developments

This book provides expert coverage of the physical properties of new non-crystalline solids-tellurite glass smart materials-and the latest applications of these materials, offering insights into innovative applications for radiation shielding, energy harvesting, laser devices, and temperature sensing, among others. In particular, there is a focus on optics, energy conversion technology and laser devices, structural and luminescence properties for laser applications, optothermal and optical properties in the presence of gold nanoparticles, and lanthanide doped zinc oxyfluoro-tellurite glass as a new smart material. Additional chapters address the properties and uses of tellurite glasses in optical sensing, the significance of Near Infrared (NIR) emissions, solar cells, solar energy harvesting, luminescent displays, and the development of bioactive-based tellurite-lanthanide (Te-Ln) doped hydroxyapatite composites for biomedical applications. As the world's reliance on glass increases, this book serves as a link between the latest findings on tellurite glasses and real-world technological advancement. Academic researchers and industry professionals alike will find this book a useful resource in keeping abreast of recent developments in the field.

This critical volume examines the different methods used for the synthesis of a great number of photocatalysts, including TiO2, ZnO and other modified semiconductors, as well as characterization techniques used for determining the optical, structural and morphological properties of the semiconducting materials. Additionally, the authors discuss photoelectrochemical methods for determining the light activity of the photocatalytic semiconductors by means of measurement of properties such as band gap energy, flat band potential and kinetics of hole and electron transfer. Photocatalytic Semiconductors: Synthesis, Characterization and Environmental Applications provide an overview of the semiconductor materials from first- to third-generation photocatalysts and their applications in wastewater treatment and water disinfection. The book further presents economic and toxicological aspects in the production and application of photocatalytic materials.

This thesis devotes three introductory chapters to outlining basic recipes for constructing the quantum Hamiltonian of an arbitrary superconducting circuit, starting from classical circuit design. Since a superconducting circuit is one of the most promising platforms for realizing a practical quantum computer, anyone who is starting out in the field will benefit greatly from this introduction. The second focus of the introduction is the ultrastrong light-matter interaction (USC), where the latest developments are described. This is followed by three main research works comprising quantum memory in USC; scaling up the 1D circuit to a 2D lattice configuration; creation of Noisy Intermediate-Scale Quantum era quantum error correction codes and polariton-mediated qubit-qubit interaction. The research work detailed in this thesis will make a major contribution to the development of quantum random access memory, a prerequisite for various quantum machine learning algorithms and applications.

This thesis reports on the use of scanning tunnelling microscopy to elucidate the atomic-scale electronic structure of a charge density wave, revealing that it has a d-symmetry form factor, hitherto unobserved in nature. It then details the development of an entirely new class of scanned probe: the scanning Josephson tunnelling microscope. This scans the Josephson junction formed between a cuprate superconducting microscope tip and the surface of a cuprate sample, thereby imaging the superfluid density of the sample with nanometer resolution. This novel method is used to establish the existence of a spatially modulated superconducting condensate, something postulated theoretically over half a century ago but never previously observed.

This book puts the spotlight on how a real-time kernel works using Micrium s C/OS-III as a reference. The book consists of two complete parts. The first describes real-time kernels in generic terms. Part II provide examples for the reader, using Texas Instruments EVM-EVALBOT, a small, robotic evaluation board. The board is based on the Stellaris LM3S9B92 which combines the popular ARM Cortex-M3(r) architecture with Ethernet MAC+PHY, USB OTG (On-The-Go), and I2S. Together with the IAR Systems Embedded Workbench for ARM development tools, the evaluation board provides everything necessary to enable the reader to be up and running quickly, as well as a fun and educational experience, resulting in a high-level of proficiency in a short time.

This book is written for serious embedded systems programmers, consultants, hobbyists, and students interested in understanding the inner workings of a real-time kernel. C/OS-III is not just a great learning platform, but also a full commercial-grade software package, ready to be part of a wide range of products.

C/OS-III is a highly portable, ROMable, scalable, preemptive real-time, multitasking kernel designed specifically to address the demanding requirements of today s embedded systems. C/OS-III is the successor to the highly popular C/OS-II real-time kernel but can use most of C/OS-II s ports with minor modifications. Some of the features of C/OS-III are:

Preemptive multitasking with round-robin scheduling of tasks at the same priority
Supports and unlimited number of tasks and other kernel objects
Rich set of services: semaphores, mutual exclusion semaphores with full priority inheritance, event flags, message queues, timers, fixed-size memory block management, and more. Built-in performance measurements

Many open questions in Theoretical Physics pertain to strongly interacting quantum systems such as the quark-gluon plasma (QGP) produced in heavy-ion collisions or the strange-metal phase observed in many high-temperature superconductors. These systems are notoriously difficult to study using traditional methods such as perturbation theory, but the gauge/gravity duality offers a successful alternative approach, which maps strongly interacting quantum gauge theories to computationally tractable, classical gravity theories. This book begins with a pedagogical introduction to how the duality can be used to extract transport properties of quantum systems from their gravity dual. It then presents new results on hydrodynamic transport in strongly interacting quantum fluids, providing strong evidence that the Haack-Yarom identity between second-order transport coefficients holds for all fluids with a classical gravity dual and may be a universal feature of all strongly coupled quantum fluids such as the QGP. Newly derived Kubo formulae, expressing transport coefficients in terms of quantum correlators, hold independently of the duality. Lastly, the book discusses new results on magnetic impurities in strongly correlated metals, including the first dual gravity description of an inter-impurity coupling, crucial for the quantum criticality underlying the strange-metal phase.

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

This book examines the electronic structure of earth-abundant and environmentally friendly materials for use as absorber layers within photovoltaic cells. The corroboration between high-quality photoemission measurements and density of states calculations yields valuable insights into why these materials have demonstrated poor device efficiencies in the vast literature cited. The book shows how the materials' underlying electronic structures affect their properties, and how the band positions make them unsuitable for use with established solar cell technologies. After explaining these poor efficiencies, the book offers alternative window layer materials to improve the use of these absorbers. The power of photoemission and interpretation of the data in terms of factors generally overlooked in the literature, such as the materials' oxidation and phase impurity, is demonstrated. Representing a unique reference guide, the book will be of considerable interest and value to members of the photoemission community engaged in solar cell research, and to a wider materials science audience as well.