This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today's most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy ("become hot"), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

This book introduces a variety of basic sciences and applications of the nanocomposites and heterostructures of functional oxides. The presence of a high density of interfaces and the differences in their natures are described by the authors. Both nanocomposites and heterostructures are detailed in depth by researchers from each of the research areas in order to compare their similarities and differences. A new interfacial material of heterostructure of strongly correlated electron systems is introduced.

The 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015) was held from 19-23 October 2015. This congress focused on the latest developments of sustainable energy technologies, materials for sustainable energy applications and environmental and economic perspectives of energy. These proceedings included 40 peer-reviewed technical papers, submitted by leading academic and research institutions from over 23 countries and represented some of the most cutting-edge researches available. The sections included in the 40 papers are listed as follows: Solar Energy, Fuel cells, Hydrogen productions, Hydrogen storage, Energy storage, Energy saving, Biofuels and Bioenergy, Wind Energy, Nuclear Energy, Fossil Energy, Hydropower, Carbon capture and storage, Materials for renewable energy storage and conversion, Photovoltaics and solar cells, Fuel generation from renewables (catalysis), Carbon dioxide sequestration and conversion, Materials for energy saving, Thermoelectrics, Energy saving in buildings, Bio-Assessment and Toxicology, Air pollution from mobile and stationary sources, Transport of Air Pollutants, Environment-Friendly Construction and Development, Energy Management Systems.

This revised and updated edition of the well-received book by C. Klingshirn provides an introduction to and an overview of all aspects of semiconductor optics, from IR to visible and UV. It has been split into two volumes and rearranged to offer a clearer structure of the course content. Inserts on important experimental techniques as well as sections on topical research have been added to support research-oriented teaching and learning. Volume 1 provides an introduction to the linear optical properties of semiconductors. The mathematical treatment has been kept as elementary as possible to allow an intuitive approach to the understanding of results of semiconductor spectroscopy. Building on the phenomenological model of the Lorentz oscillator, the book describes the interaction of light with fundamental optical excitations in semiconductors (phonons, free carriers, excitons). It also offers a broad review of seminal research results augmented by concise descriptions of the relevant experimental techniques, e.g., Fourier transform IR spectroscopy, ellipsometry, modulation spectroscopy and spatially resolved methods, to name a few. Further, it picks up on hot topics in current research, like quantum structures, mono-layer semiconductors or Perovskites. The experimental aspects of semiconductor optics are complemented by an in-depth discussion of group theory in solid-state optics. Covering subjects ranging from physics to materials science and optoelectronics, this book provides a lively and comprehensive introduction to semiconductor optics. With over 120 problems, more than 480 figures, abstracts to each chapter, as well as boxed inserts and a detailed index, it is intended for use in graduate courses in physics and neighboring sciences like material science and electrical engineering. It is also a valuable reference resource for doctoral and advanced researchers.

This thesis describes advances in the understanding of HgCdTe detectors. While long wave (15 m) infrared detectors HgCdTe detectors have been developed for military use under high background irradiance, these arrays had not previously been developed for astronomical use where the background irradiance is a billion times smaller. The main pitfall in developing such arrays for astronomy is the pixel dark current which plagues long wave HgCdTe. The author details work on the success of shorter wavelength development at Teledyne Imaging Sensors, carefully modeling the dark current-reverse bias voltage curves of their 10 m devices at a temperature of 30K, as well as the dark current-temperature curves at several reverse biases, including 250 mV. By projecting first to 13 and then 15 m HgCdTe growth, values of fundamental properties of the material that would minimize tunneling dark currents were determined through careful modeling of the dark current-reverse bias voltage curves, as well as the dark current-temperature curves. This analysis was borne out in the 13 m parts produced by Teledyne, and then further honed to produce the necessary parameters for the 15 m growth. The resulting 13 m arrays are being considered by a number of ground-based astronomy research groups.

This book presents the scientific principles, processing conditions, probable failure mechanisms, and a description of reliability performance and equipment required for implementing high-temperature and lead-free die attach materials. In particular, it addresses the use of solder alloys, silver and copper sintering, and transient liquid-phase sintering. While different solder alloys have been used widely in the microelectronics industry, the implementation of sintering silver and transient liquid-phase sintering remains limited to a handful of companies. Hence, the book devotes many chapters to sintering technologies, while simultaneously providing only a cursory coverage of the more widespread techniques employing solder alloys. Addresses the differences between sintering and soldering (the current die-attach technologies), thereby comprehensively addressing principles, methods, and performance of these high-temperature die-attach materials; Emphasizes the industrial perspective, with chapters written by engineers who have hands-on experience using these technologies; Baker Hughes, Bosch and ON Semiconductor, are represented as well as materials suppliers such as Indium; Simultaneously provides the detailed science underlying these technologies by leading academic researchers in the field.

This work studies the magnetic behavior of ZnO nanoparticles capped with different organic molecules and showing room-temperature ferromagnetism (RTFM). Of particular significance is the combination of element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) techniques, which demonstrates the intrinsic occurrence of RTFM in these systems and indicates that it is not related to the 3-D states of the metallic cation but is relayed along the conduction band of the semiconductor. The discovery of room-temperature ferromagnetism (RTFM) in semiconductors holds great promise in future spintronics technologies. Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.

This thesis examines the unique properties of gallium arsenide (GaAs)-based quantum-dot semiconductor optical amplifiers for optical communication networks, introducing readers to their fundamentals, basic parameters and manifold applications. The static and dynamic properties of these amplifiers are discussed extensively in comparison to conventional, non quantum-dot based amplifiers, and their unique advantages are elaborated on, such as the fast carrier dynamics and the decoupling of gain and phase dynamics. In addition to diverse amplification scenarios involving single and multiple high symbol rate amplitude and phase-coded data signals, wide-range wavelength conversion as a key functionality for optical signal processing is investigated and discussed in detail. Furthermore, two novel device concepts are developed and demonstrated that have the potential to significantly simplify network architectures, reducing the investment and maintenance costs as well as the energy consumption of future networks.

This book, now in its second edition, introduces readers to quantum rings as a special class of modern high-tech material structures at the nanoscale. It deals, in particular, with their formation by means of molecular beam epitaxy and droplet epitaxy of semiconductors, and their topology-driven electronic, optical and magnetic properties. A highly complex theoretical model is developed to adequately represent the specific features of quantum rings. The results presented here are intended to facilitate the development of low-cost high-performance electronic, spintronic, optoelectronic and information processing devices based on quantum rings. This second edition includes both new and significantly revised chapters. It provides extensive information on recent advances in the physics of quantum rings related to the spin-orbit interaction and spin dynamics (spin interference in Rashba rings, tunable exciton topology on type II InAs/GaAsSb quantum nanostructures), the electron-phonon interaction in ring-like structures, quantum interference manifestations in novel materials (graphene nanoribbons, MoS2), and the effects of electrical field and THz radiation on the optical properties of quantum rings. The new edition also shares insights into the properties of various novel architectures, including coupled quantum ring-quantum dot chains and concentric quantum rings, topologic states of light in self-assembled ring-like cavities, and optical and plasmon m.odes in Moebius-shaped resonators.

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

"Eco- and Renewable Energy Materials" provides a survey of the current topics and the major developmental trends in the rapidly growing research area of clean energy materials. This book covers, but is not limited to, photochemical materials (fuels from light), fuel cells (electricity from fuels), batteries (electricity storage), and hydrogen production and storage. This book is intended as a vehicle for the dissemination of research results on energy-based material science in the form of commissioned reviews and commentaries. This book is for scientists and engineers interested in energy-related materials, compounds and electronic devices. Prof. Yong Zhou is currently serving as a full professor at the Eco-Materials and Renewable Energy Research Center (ERERC), Nanjing University, China.

This book focuses on angle-resolved photoemission spectroscopy studies on novel interfacial phenomena in three typical two-dimensional material heterostructures: graphene/h-BN, twisted bilayer graphene, and topological insulator/high-temperature superconductors. Since the discovery of graphene, two-dimensional materials have proven to be quite a large "family". As an alternative to searching for other family members with distinct properties, the combination of two-dimensional (2D) materials to construct heterostructures offers a new platform for achieving new quantum phenomena, exploring new physics, and designing new quantum devices. By stacking different 2D materials together and utilizing interfacial periodical potential and order-parameter coupling, the resulting heterostructure's electronic properties can be tuned to achieve novel properties distinct from those of its constituent materials. This book offers a valuable reference guide for all researchers and students working in the area of condensed matter physics and materials science.

This book describes methods to address wearout/aging degradations in electronic chips and systems, caused by several physical mechanisms at the device level. The authors introduce a novel technique called accelerated active self-healing, which fixes wearout issues by enabling accelerated recovery. Coverage includes recovery theory, experimental results, implementations and applications, across multiple nodes ranging from planar, FD-SOI to FinFET, based on both foundry provided models and predictive models. Presents novel techniques, tested with experiments on real hardware; Discusses circuit and system level wearout recovery implementations, many of these designs are portable and friendly to the standard design flow; Provides circuit-architecture-system infrastructures that enable the accelerated self-healing for future resilient systems; Discusses wearout issues at both transistor and interconnect level, providing solutions that apply to both; Includes coverage of resilient aspects of emerging applications such as IoT.

This thesis sheds important new light on the puzzling properties of Strontium Ruthenate. Using a sophisticated weak-coupling approach, exact within certain limits, it shows that proper treatment of spin-orbit and multi-band effects is crucial to the physics. Based on the results of these calculations, it resolves a crucial, long-standing puzzle in the field: It demonstrates why the experimentally observed time-reversal breaking is not incompatible with the observed lack of measurable edge currents. Lastly, the thesis makes predictions for the properties of the material under uniaxial strain, which are in good agreement with recent experiments -resolving the mystery of the so-called 3K phase, and suggesting the intriguing possibility that under strain the superconductor may become conventional.

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.

3D Integration is being touted as the next semiconductor revolution. This book provides a comprehensive coverage on the design and modeling aspects of 3D integration, in particularly, focus on its electrical behavior. Looking from the perspective the Silicon Via (TSV) and Glass Via (TGV) technology, the book introduces 3DICs and Interposers as a technology, and presents its application in numerical modeling, signal integrity, power integrity and thermal integrity. The authors underscored the potential of this technology in design exchange formats and power distribution.