This thesis presents various characteristics of 122-type iron pnictide (FeSC) such as crystal and electronic structure, carrier-doping effect, and impurity-scattering effect, using transport, magnetization, specific heat, single-crystal X-ray diffraction, and optical spectral measurements. Most notably the measurement on the magnetic fluctuation in the material successfully explains already known unusual electronic properties, i.e., superconducting gap symmetry, anisotropy of in-plane resistivity in layered structure, and charge dynamics; and comparing them with those of normal phase, the controversial problems in FeSCs are eventually settled. The thesis provides broad coverage of the physics of FeSCs both in the normal and superconducting phase, and readers therefore benefit from the efficient up-to-date study of FeSCs in this thesis. An additional attraction is the detailed description of the experimental result critical for the controversial problems remaining since the discovery of FeSC in 2008, which helps readers follow up recent developments in superconductor research.

This book offers a theoretical description of topological matter in terms of effective field theories, and in particular topological field theories, focusing on two main topics: topological superconductors and topological insulators.Even though there is vast literature on these subjects, the book fills an important gap by providing a concise introduction to both topological order and symmetry-protected phases using a modern mathematical language, and developing the theoretical concepts by highlighting the physics and the physical properties of the systems. Further, it discusses in detail the topological interactions for topologically ordered matter, and the response to smooth external fields for symmetry protected matter. The book also covers more specialized topics that cannot be found elsewhere. Specifically, the response of superconductors to geometry, including the newly discovered geo-Meissner effect; and a correction to the usual Meissner effect, only present in the topologically interesting chiral superconductors.

This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today's most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy ("become hot"), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

This book describes new trends in the nanoscience of isotopic materials science. Assuming a background in graduate condensed matter physics and covering the fundamental aspects of isotopic materials science from the very beginning, it equips readers to engage in high-level professional research in this area. The books main objective is to provide insight into the question of why solids are the way they are, either because of how their atoms are bonded with one another, because of defects in their structure, or because of how they are produced or processed. Accordingly, it explores the science of how atoms interact, connects the results to real materials properties, and demonstrates the engineering concepts that can be used to produce or improve semiconductors by design. In addition, it shows how the concepts discussed are applied in the laboratory. The book addresses the needs of researchers, graduate students and senior undergraduate students alike. Although primarily written for materials science audience, it will be equally useful to those teaching in electrical engineering, materials science or even chemical engineering or physics curricula. In order to maintain the focus on materials concepts, however, the book does not burden the reader with details of many of the derivations and equations nor does it delve into the details of electrical engineering topics.

This new edition of the Phosphor Handbook comprises three volumes and provides a comprehensive source of knowledge for researchers interested in synthesis, characterization, properties, and applications of phosphor materials. The first volume covers the theoretical background and fundamental properties of luminescence as applied to solid-state phosphor materials. New sections include the rapid developments in principal phosphors in nitrides, perovskite, and silicon carbide. The second volume provides the descriptions of synthesis and optical properties of phosphors used in different applications, including the novel phosphors for some newly developed applications. New sections on smart phosphors, quantum dots for display applications, up-conversion nanophosphors for photonic application, phosphors for solar cells. The third volume addresses the experimental methods for phosphor evaluation and characterization and the contents are widely expanded from the Second Edition, including the theoretical and experimental designs for new phosphors as well as the phosphor analysis through high pressure and synchrotron studies.

Authored by many of the world's leading experts on high-Tc superconductivity, this volume presents a panorama of ongoing research in the field, as well as insights into related multifunctional materials. The contributions cover many different and complementary aspects of the physics and materials challenges, with an emphasis on superconducting materials that have emerged since the discovery of the cuprate superconductors, for example pnictides, MgB2, H2S and other hydrides. Special attention is also paid to interface superconductivity. In addition to superconductors, the volume also addresses materials related to polar and multifunctional ground states, another class of materials that owes its discovery to Prof. Muller's ground-breaking research on SrTiO3.

This book introduces a variety of basic sciences and applications of the nanocomposites and heterostructures of functional oxides. The presence of a high density of interfaces and the differences in their natures are described by the authors. Both nanocomposites and heterostructures are detailed in depth by researchers from each of the research areas in order to compare their similarities and differences. A new interfacial material of heterostructure of strongly correlated electron systems is introduced.

This is a specialized book for researchers and technicians of universities and companies who are interested in the fundamentals of RF power semiconductors, their applications and market penetration.Looking around, we see that products using vacuum tube technology are disappearing. For example, branch tube TVs have changed to liquid crystal TVs, and fluorescent light have turned into LED. The switch from vacuum tube technology to semiconductor technology has progressed remarkably. At the same time, high-precision functionalization, miniaturization and energy saving have advanced. On the other hand, there is a magnetron which is a vacuum tube device for generating microwaves. However, even this vacuum tube technology has come to be replaced by RF power semiconductor technology. In the last few years the price of semiconductors has dropped sharply and its application to microwave heating and energy fields will proceed. In some fields the transition from magnetron microwave oscillator to semiconductor microwave oscillator has already begun. From now on this development will progress remarkably. Although there are several technical books on electrical systems that explain RF power semiconductors, there are no books yet based on users' viewpoints on actual microwave heating and energy fields. In particular, none have been written about exact usage and practical cases, to answer questions such as "What are the advantages and disadvantages of RF power semiconductor oscillator?", "What kind of field can be used?" and the difficulty of the market and application. Based on these issues, this book explains the RF power semiconductors from the user's point of view by covering a very wide range of fields.

The 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015) was held from 19-23 October 2015. This congress focused on the latest developments of sustainable energy technologies, materials for sustainable energy applications and environmental and economic perspectives of energy. These proceedings included 40 peer-reviewed technical papers, submitted by leading academic and research institutions from over 23 countries and represented some of the most cutting-edge researches available. The sections included in the 40 papers are listed as follows: Solar Energy, Fuel cells, Hydrogen productions, Hydrogen storage, Energy storage, Energy saving, Biofuels and Bioenergy, Wind Energy, Nuclear Energy, Fossil Energy, Hydropower, Carbon capture and storage, Materials for renewable energy storage and conversion, Photovoltaics and solar cells, Fuel generation from renewables (catalysis), Carbon dioxide sequestration and conversion, Materials for energy saving, Thermoelectrics, Energy saving in buildings, Bio-Assessment and Toxicology, Air pollution from mobile and stationary sources, Transport of Air Pollutants, Environment-Friendly Construction and Development, Energy Management Systems.

This work studies the magnetic behavior of ZnO nanoparticles capped with different organic molecules and showing room-temperature ferromagnetism (RTFM). Of particular significance is the combination of element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) techniques, which demonstrates the intrinsic occurrence of RTFM in these systems and indicates that it is not related to the 3-D states of the metallic cation but is relayed along the conduction band of the semiconductor. The discovery of room-temperature ferromagnetism (RTFM) in semiconductors holds great promise in future spintronics technologies. Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.

This book provides a systematical and comprehensive description of some facets of modeling, designing, analyzing and exploring the control allocation and fault-tolerant control problems for over-actuated spacecraft attitude control system under actuator failures, system uncertainties and disturbances. The book intends to provide a unified platform for understanding and applicability of the fault-tolerant attitude control and control allocation for different purposes in aerospace engineering and some related fields. And it is particularly suited for readers who are interested to learn solutions in spacecraft attitude control system design and related engineering applications.

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.

This revised and updated edition of the well-received book by C. Klingshirn provides an introduction to and an overview of all aspects of semiconductor optics, from IR to visible and UV. It has been split into two volumes and rearranged to offer a clearer structure of the course content. Inserts on important experimental techniques as well as sections on topical research have been added to support research-oriented teaching and learning. Volume 1 provides an introduction to the linear optical properties of semiconductors. The mathematical treatment has been kept as elementary as possible to allow an intuitive approach to the understanding of results of semiconductor spectroscopy. Building on the phenomenological model of the Lorentz oscillator, the book describes the interaction of light with fundamental optical excitations in semiconductors (phonons, free carriers, excitons). It also offers a broad review of seminal research results augmented by concise descriptions of the relevant experimental techniques, e.g., Fourier transform IR spectroscopy, ellipsometry, modulation spectroscopy and spatially resolved methods, to name a few. Further, it picks up on hot topics in current research, like quantum structures, mono-layer semiconductors or Perovskites. The experimental aspects of semiconductor optics are complemented by an in-depth discussion of group theory in solid-state optics. Covering subjects ranging from physics to materials science and optoelectronics, this book provides a lively and comprehensive introduction to semiconductor optics. With over 120 problems, more than 480 figures, abstracts to each chapter, as well as boxed inserts and a detailed index, it is intended for use in graduate courses in physics and neighboring sciences like material science and electrical engineering. It is also a valuable reference resource for doctoral and advanced researchers.

"Eco- and Renewable Energy Materials" provides a survey of the current topics and the major developmental trends in the rapidly growing research area of clean energy materials. This book covers, but is not limited to, photochemical materials (fuels from light), fuel cells (electricity from fuels), batteries (electricity storage), and hydrogen production and storage. This book is intended as a vehicle for the dissemination of research results on energy-based material science in the form of commissioned reviews and commentaries. This book is for scientists and engineers interested in energy-related materials, compounds and electronic devices. Prof. Yong Zhou is currently serving as a full professor at the Eco-Materials and Renewable Energy Research Center (ERERC), Nanjing University, China.

This book introduces state-of-the-art verification techniques for real-time embedded systems, based on the inverse method for parametric timed automata. It reviews popular formalisms for the specification and verification of timed concurrent systems and, in particular, timed automata as well as several extensions such as timed automata equipped with stopwatches, linear hybrid automata and affine hybrid automata.The inverse method is introduced, and its benefits for guaranteeing robustness in real-time systems are shown. Then, it is shown how an iteration of the inverse method can solve the good parameters problem for parametric timed automata by computing a behavioral cartography of the system. Different extensions are proposed particularly for hybrid systems and applications to scheduling problems using timed automata with stopwatches. Various examples, both from the literature and industry, illustrate the techniques throughout the book.Various parametric verifications are performed, in particular of abstractions of a memory circuit sold by the chipset manufacturer ST-Microelectronics, as well as of the prospective flight control system of the next generation of spacecraft designed by ASTRIUM Space Transportation.

Contents:

1. Parametric Timed Automata.2. The Inverse Method for Parametric Timed Automata.3. The Inverse Method in Practice: Application to Case Studies.4. Behavioral Cartography of Timed Automata.5. Parameter Synthesis for Hybrid Automata.6. Application to the Robustness Analysis of Scheduling Problems.7. Conclusion and Perspectives.

About the Authors

etienne Andre is Associate Professor in the Laboratoire d'Informatique de Paris Nord, in the University of Paris 13 (Sorbonne Paris Cite) in France. His current research interests focus on the verification of real-time systems.Romain Soulat is currently completing his PhD at the LSV laboratory at ENS-Cachan in France, focusing on the modeling and verification of hybrid temporal systems.

This book presents the scientific principles, processing conditions, probable failure mechanisms, and a description of reliability performance and equipment required for implementing high-temperature and lead-free die attach materials. In particular, it addresses the use of solder alloys, silver and copper sintering, and transient liquid-phase sintering. While different solder alloys have been used widely in the microelectronics industry, the implementation of sintering silver and transient liquid-phase sintering remains limited to a handful of companies. Hence, the book devotes many chapters to sintering technologies, while simultaneously providing only a cursory coverage of the more widespread techniques employing solder alloys. Addresses the differences between sintering and soldering (the current die-attach technologies), thereby comprehensively addressing principles, methods, and performance of these high-temperature die-attach materials; Emphasizes the industrial perspective, with chapters written by engineers who have hands-on experience using these technologies; Baker Hughes, Bosch and ON Semiconductor, are represented as well as materials suppliers such as Indium; Simultaneously provides the detailed science underlying these technologies by leading academic researchers in the field.

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

This thesis examines the unique properties of gallium arsenide (GaAs)-based quantum-dot semiconductor optical amplifiers for optical communication networks, introducing readers to their fundamentals, basic parameters and manifold applications. The static and dynamic properties of these amplifiers are discussed extensively in comparison to conventional, non quantum-dot based amplifiers, and their unique advantages are elaborated on, such as the fast carrier dynamics and the decoupling of gain and phase dynamics. In addition to diverse amplification scenarios involving single and multiple high symbol rate amplitude and phase-coded data signals, wide-range wavelength conversion as a key functionality for optical signal processing is investigated and discussed in detail. Furthermore, two novel device concepts are developed and demonstrated that have the potential to significantly simplify network architectures, reducing the investment and maintenance costs as well as the energy consumption of future networks.

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.