This book addresses problems in three main developments in modern condensed matter physics- namely topological superconductivity, many-body localization and strongly interacting condensates/superfluids-by employing fruitful analogies from classical mechanics. This strategy has led to tangible results, firstly in superconducting nanowires: the density of states, a smoking gun for the long sought Majorana zero mode is calculated effortlessly by mapping the problem to a textbook-level classical point particle problem. Secondly, in localization theory even the simplest toy models that exhibit many-body localization are mathematically cumbersome and results rely on simulations that are limited by computational power. In this book an alternative viewpoint is developed by describing many-body localization in terms of quantum rotors that have incommensurate rotation frequencies, an exactly solvable system. Finally, the fluctuations in a strongly interacting Bose condensate and superfluid, a notoriously difficult system to analyze from first principles, are shown to mimic stochastic fluctuations of space-time due to quantum fields. This analogy not only allows for the computation of physical properties of the fluctuations in an elegant way, it sheds light on the nature of space-time. The book will be a valuable contribution for its unifying style that illuminates conceptually challenging developments in condensed matter physics and its use of elegant mathematical models in addition to producing new and concrete results.

Radio Frequency Transistors: Principles and Practical Applications is a complete tool kit for successful RF circuit design. As cellular and satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth of practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. The book focuses primarily on the more difficult area of high power transistor amplifier design and construction.

An entire chapter devoted solely to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors, showing clearly why LDMOS is the designer's choice for high power, linear amplifiers in today's rapidly expanding digital world of communications. Coverage also includes applications of LDMOS RF high power transistors in current generation cellular technologies, the design of LDMOS high power amplifiers, and comments about the latest efforts to model LDMOS RF power devices.
Other topics covered include the selection of matched high power RF transistors, input impedance matching of high power transistors, interstage matching, and capacitors and inductors at radio frequencies.

Fully updated to include the newest cutting edge technology of RF circuit design.
Contains practical, hands-on design advice to help you save time, money and resources
Written by engineers for engineers to use in the field.

This is the first book that can be considered a textbook on thin film science, complete with exercises at the end of each chapter. Ohring has contributed many highly regarded reference books to the AP list, including Reliability and Failure of Electronic Materials and the Engineering Science of Thin Films. The knowledge base is intended for science and engineering students in advanced undergraduate or first-year graduate level courses on thin films and scientists and engineers who are entering or require an overview of the field.
Since 1992, when the book was first published, the field of thin films has expanded tremendously, especially with regard to technological applications. The second edition will bring the book up-to-date with regard to these advances. Most chapters have been greatly updated, and several new chapters have been added.

This textbook provides a sound foundation in physical optics by covering key concepts in a rigorous but accessible manner. Propagation of electromagnetic waves is examined from multiple perspectives, with explanation of which viewpoints and methods are best suited to different situations. After an introduction to the theory of electromagnetism, reflection, refraction, and dispersion, topics such as geometrical optics, interference, diffraction, coherence, laser beams, polarization, crystallography, and anisotropy are closely examined. Optical elements, including lenses, mirrors, prisms, classical and Fabry-Perot interferometers, resonant cavities, multilayer dielectric structures, interference and spatial filters, diffraction gratings, polarizers, and birefringent plates, are treated in depth. The coverage also encompasses such seldom-covered topics as modeling of general astigmatism via 4x4 matrices, FFT-based numerical methods, and bianisotropy, with a relativistic treatment of optical activity and the Faraday and Fresnel-Fizeau effects. Finally, the history of optics is discussed.

Advances in Imaging and Electron Physics, Volume 206, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.

This book examines the electronic structure of earth-abundant and environmentally friendly materials for use as absorber layers within photovoltaic cells. The corroboration between high-quality photoemission measurements and density of states calculations yields valuable insights into why these materials have demonstrated poor device efficiencies in the vast literature cited. The book shows how the materials' underlying electronic structures affect their properties, and how the band positions make them unsuitable for use with established solar cell technologies. After explaining these poor efficiencies, the book offers alternative window layer materials to improve the use of these absorbers. The power of photoemission and interpretation of the data in terms of factors generally overlooked in the literature, such as the materials' oxidation and phase impurity, is demonstrated. Representing a unique reference guide, the book will be of considerable interest and value to members of the photoemission community engaged in solar cell research, and to a wider materials science audience as well.

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Some years ago, silicon-based mechanical sensors, like pressure sensors, accelerometers and gyroscopes, started their successful advance. Every year, hundreds of millions of these devices are sold, mainly for medical and automotive applications. The airbag sensor on which research already started several decades ago at Stanford University can be found in every new car and has saved already numerous lives. Pressure sensors are also used in modern electronic blood pressure equipment. Many other mechanical sensors, mostly invisible to the public, perform useful functions in countless industrial and consumer products.

The underlying physics and technology of silicon-based mechanical sensors is rather complex and is treated in numerous publications scattered throughout the literature. Therefore, a clear need existed for a handbook that thoroughly and systematically reviews the present basic knowledge on these devices.

After a short introduction, Professor Bao discusses the main issues relevant to silicon-based mechanical sensors. First a thorough treatment of stress and strain in diaphragms and beams is presented. Next, vibration of mechanical structures is illuminated, followed by a chapter on air damping. These basic chapters are then succeeded by chapters in which capacitive and piezoresistive sensing techniques are amply discussed. The book concludes with chapters on commercially available pressure sensors, accelerometers and resonant sensors in which the above principles are applied.

Everybody, involved in designing silicon-based mechanical sensors, will find a wealth of useful information in the book, assisting the designer in obtaining highly optimized devices.

Today, air-to-surface vessel (ASV) radars, or more generally airborne maritime surveillance radars, are installed on maritime reconnaissance aircraft for long-range detection, tracking and classification of surface ships (ASuW-anti-surface warfare) and for hunting submarines (ASW-anti-submarine warfare). Such radars were first developed in the UK during WWII as part of the response to the threat to shipping from German U-boats. This book describes the ASV radars developed in the UK and used by RAF Coastal Command during WWII for long-range maritime surveillance.

Today, air-to-surface vessel (ASV) radars, or more generally maritime surveillance radars, are installed on maritime reconnaissance aircraft for long-range detection, tracking and classification of surface ships (ASuW-anti-surface warfare) and for hunting submarines (ASW-anti-submarine warfare). Such radars were first developed in the UK during WWII as part of the response to the threat to shipping from German U-Boats. This book describes the ASV radars developed in the UK after WWII (1946-2000) and used by the RAF for long-range maritime surveillance.

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps which give them a huge advantage over the indirect gap SiC. As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high-brightness (15 lumens per watt), very-long-lifetime white LEDs are under development with the potential to replace incandescent bulbs in many situations.

WIDE BANDGAP SEMICONDUCTORS provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical explanations of key processes such as laser diodes, LEDs and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques, and more...

The volume also explores the potential use of these semiconductors in HDTV, power conditioning devices, and high power microwave applications. The contributors are all experts in the fields of growth, processing, and characterization of these semiconductors, including II-VI compounds, processing techniques for SiC, GaN and diamond, and materials analysis of all wide gap semiconductors.

Key Features:

- Explains the development and advantages of broadgap semiconductors, showing their increasing power and their increasingly broader use in commercial and military products

- Features step-by-step explanations of key processes in the fabrication of the semiconductors, including chemistry, testing, design, and more

- Explores the need for advanced electronics capable of operation at 6000C and how silicon-on-insulator technology will meet this need

- Provides an understanding of semiconductor chemistry, thermodynamics and etching, along with technical explanations of common devices, descriptions of processing equipment and techniques, impurity testing, implantation damage, and more

Handbook of Silicon Wafer Cleaning Technology, Third Edition, provides an in-depth discussion of cleaning, etching and surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet and plasma processing are reviewed, including surface and colloidal aspects. This revised edition includes the developments of the last ten years to accommodate a continually involving industry, addressing new technologies and materials, such as germanium and III-V compound semiconductors, and reviewing the various techniques and methods for cleaning and surface conditioning. Chapters include numerous examples of cleaning technique and their results. The book helps the reader understand the process they are using for their cleaning application and why the selected process works. For example, discussion of the mechanism and physics of contamination, metal, particle and organic includes information on particle removal, metal passivation, hydrogen-terminated silicon and other processes that engineers experience in their working environment. In addition, the handbook assists the reader in understanding analytical methods for evaluating contamination. The book is arranged in an order that segments the various cleaning techniques, aqueous and dry processing. Sections include theory, chemistry and physics first, then go into detail for the various methods of cleaning, specifically particle removal and metal removal, amongst others.

The only one-stop reference to design, analysis, and manufacturing concepts for power devices utilizing HTS.

High temperature superconductors (HTS) have been used for building many devices for electric grids worldwide and for large ship propulsion motors for the U.S. Navy. And yet, there has been no single source discussing theory and design issues relating to power applications of HTS--until now. This book provides design and analysis for various devices and includes examples of devices built over the last decade.

Starting with a complete overview of HTS, the subsequent chapters are dedicated to specific devices: cooling and thermal insulation systems; rotating AC and DC machines; transformers; fault current limiters; power cables; and Maglev transport. As applicable, each chapter provides a history of the device, principles, configuration, design and design challenges, prototypes, and manufacturing issues, with each ending with a summary of the material covered. The design analysis and design examples provide critical insight for readers to successfully design their own devices. Original equipment manufacturer (OEM) designers, industry and utilities users, universities and defense services research groups, and senior/postgraduate engineering students and instructors will rely on this resource.

"HTS technology reduces electric losses and increases the efficiency of power equipment. This book by Swarn Kalsi, a leading expert on the HTS subject, provides a survey of the HTS technology and the design rules, performance analyses, and manufacturing concepts for power application-related devices. It compares conventional and HTS technology approaches for device design and provides significant examples of devices utilizing the HTS technology today. The book is useful for a broad spectrum of professionals worldwide: students, teaching staff, and OEM designers as well as users in industry and electric utilities."
--Professor Dr. Rolf Hellinger, Research and Technologies Corporate Technology, Siemens AG

Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability.

"God made solids, but surfaces were the work of the devil." This statement by Nobel prize winner Wolfgang Paul emphasizes the diabolic nature of surfaces. Since surface properties deviate significantly from the bulk solid state, surface studies can be puzzling, misleading, and quite exciting! This book is an introduction to the basics of surface science including thermodynamics, surface structure, experimental probes, spectroscopy, microscopy, and ion-scattering. Surfaces are the external border of materials to the external worlds, thus by exploring surfaces one can investigate the material.

This book covers ALL aspects of projected capacitive touch sensors including basic principles, the physics of PCAP, capacitance measurements, touch sensor materials and construction, electrical noise, software drivers, and testing. It is targeted at working engineers who are implementing touch into their products as well as anyone else with an interest in how touch screens work. * Offers readers the first book on the use of projected capacitive (PCAP) touch technology for touch screens; * Explains not only how PCAP touch works, but also addresses the implementation details an engineer needs when incorporating PCAP into their product; * Includes explanations of different cover lens materials, cover lens coatings, software drivers, touch testing, and many other areas of general knowledge that would be useful to a design engineer.

This authoritative new book focuses on recent developments in the instrumentation for sending voltages and currents. It covers new trends and challenges in the field, such as measurements of biocurrents, the increased speed of the components for data taking, testing of computers and integrated circuits where the measurement of rapid voltage and current variations on a very small geometrical scale is necessary. The first chapter concentrates on recent methods to sense voltages and currents, while the rest of the book investigates the applied side, covering for instance electrical power and energy measurements. The main purpose of this volume is to illustrate commonly employed techniques rather than track the scientific evolution and merits and therefore mainly covers patent literature aimed at industrial applications. It is an exciting addition, justifying the series' claim to cover state-of-the-art developments in both the applied and theoretical fields of sensors and actuators.

The measurement of voltages and currents is a common task in the field of electricity and electronics. From a technical point of view it is useful to identify schematically different steps of such a measurement. In a first step a voltage or a current is sensed, intermediate steps such as amplification, transmission and further treatment may follow to yield the result in the final step. Today in most cases microprocessors perform the final steps of such measurements. Analog-to digital converters digitise a voltage that is proportional to the value to be measured and a processor performs further computations and handles the storage and the display of the results. The prerequisite for such measurements are sensors or transducers that respond in a known way to the voltage or current to be measured. The emphasis of this book is put on recent developments of the instrumentation for sensing voltages and currents.

Aside from the general trend towards smaller, cheaper and more reliable instrumentation, new demands have arisen. New applications, like measurements of biocurrents, ask for higher sensitivities. Computers and integrated circuits pose new challenges. To exploit the increased speed of the components for data taking, suitable sensors are required. The accuracy that can be achieved depends more than ever on the first step, the acquisition of the raw data. The influence of the measurement process on the results becomes more crucial. Testing of integrated circuits themselves is a completely new application. For such tests one has to measure rapid voltage and current variations on very small geometrical scales. Here, as well as in the traditional high voltage applications, contactless measurements play an important role.

The organisation of this book is as follows: In the first chapter different methods to sense voltages and currents are described. For the sake of completeness most commonly used methods are mentioned, we concentrate, however, on those developed recently. The chapters address the subject from the side of different applications in which voltages and currents are sensed.

Since the main purpose of this publication is to illustrate commonly employed techniques rather than to track the scientific evolution and merits in particular fields, in general those publications that illustrate a particular measurement principle best have been cited. The citation of a particular reference does therefore not imply that this is the first or most pertinent publication in the respective field.

This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials. It provides a timely overview of bismuth alloys and nanostructures, from material synthesis and physical properties to device applications and also includes the latest research findings. Bismuth is considered to be a sustainable and environmentally friendly element, and has received increasing attention in a variety of innovative research areas in recent years. The book is intended as a reference resource and textbook for graduate students and researchers working in these fields.

This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices.
Key Features
* Updated with new emphasis on the semiconducting nitride materials-GaN and its alloys with In and Al
* Emphasizes the newly understood aspects of surface processes
* Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics

Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities." These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation.

The problem of instabilities is addressed in this volume, the third of this book series.

Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.

This book presents the statistical theory of complex wave scattering and quantum transport in physical systems which have chaotic classical dynamics, as in the case of microwave cavities and quantum dots, or which possess quenched randomness, as in the case of disordered conductors - with an emphasis on mesoscopic fluctuations. The statistical regularity of the phenomena is revealed in a natural way by adopting a novel maximum-entropy approach. Shannon's information entropy is maximised, subject to the symmetries and constraints which are physically relevant, within the powerful and non-perturbative theory of random matrices; this is a most distinctive feature of the book. Aiming for a self-contained presentation, the quantum theory of scattering, set in the context of quasi-one-dimensional, multichannel systems, and related directly to scattering problems in mesoscopic physics, is introduced in chapters two and three. The linear-response theory of quantum electronic transport, adapted to the context of mesoscopic systems, is discussed in chapter four. These chapters, together with chapter five on the maximum-entropy approach and chapter eight on weak localization, have been written in a most pedagogical style, suitable for use on graduate courses. In chapters six and seven, the problem of electronic transport through classically chaotic cavities and quasi-one-dimensional disordered systems is discussed. Many exercises are included, most of which are worked through in detail, aiding graduate students, teachers, and research scholars interested in the subject of quantum transport through disordered and chaotic systems.

This book focuses on the microscopic understanding of the function of organic semiconductors. By tracing the link between their morphological structure and electronic properties across multiple scales, it represents an important advance in this direction. Organic semiconductors are materials at the interface between hard and soft matter: they combine structural variability, processibility and mechanical flexibility with the ability to efficiently transport charge and energy. This unique set of properties makes them a promising class of materials for electronic devices, including organic solar cells and light-emitting diodes. Understanding their function at the microscopic scale - the goal of this work - is a prerequisite for the rational design and optimization of the underlying materials. Based on new multiscale simulation protocols, the book studies the complex interplay between molecular architecture, supramolecular organization and electronic structure in order to reveal why some materials perform well - and why others do not. In particular, by examining the long-range effects that interrelate microscopic states and mesoscopic structure in these materials, the book provides qualitative and quantitative insights into e.g. the charge-generation process, which also serve as a basis for new optimization strategies.

Nanostructured Semiconductors focuses on the development of semiconductor nanocrystals, their technologies and applications, including energy harvesting, solar cells, solid oxide fuel cells, and chemical sensors. Semiconductor oxides are used in electronics, optics, catalysts, sensors, and other functional devices. In their 2D form, the reduction in size confers exceptional properties, useful for creating faster electronics and more efficient catalysts. Since the first edition of the book, there has been significant progress in the development of new functional nanomaterials with unique and sometimes unpredictable quantum-confined properties within the class what it called two-dimensional (2D) semiconductors. These nanocrystals represent extremely thin nano-structures with thickness of just few nano-meters. Since that time, not only were 2D semiconductor oxides further developed, more importantly, 2D metal dichalcogenides, such as MoS2, MoSe2, WS2, WSe2 and others also progressed significantly in their development demonstrating their superior properties compared to their bulk and microstructural counterparts. The book has been expanded to include these advancements. The book begins with the structure and properties of semiconductor nanocrystals (chapter 1), addresses electronic device applications (chapter 2), discusses 2-Dimensional oxides and dichalcogenide semiconductors (chapters 3 through 5), and ends with energy, environment, and bio applications (chapters 6 through 8).

Starting from a broad overview of heat transport based on the Boltzmann Transport Equation, this book presents a comprehensive analysis of heat transport in bulk and nanomaterials based on a kinetic-collective model (KCM). This has become key to understanding the field of thermal transport in semiconductors, and represents an important stride. The book describes how heat transport becomes hydrodynamic at the nanoscale, propagating very much like a viscous fluid and manifesting vorticity and friction-like behavior. It introduces a generalization of Fourier's law including a hydrodynamic term based on collective behavior in the phonon ensemble. This approach makes it possible to describe in a unifying way recent experiments that had to resort to unphysical assumptions in order to uphold the validity of Fourier's law, demonstrating that hydrodynamic heat transport is a pervasive type of behavior in semiconductors at reduced scales.