ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.

"Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.

Porous Semiconductors: Optical Properties and Applications provides an examination of porous semiconductor materials. Beginning with a description of the basic electrochemistry of porous semiconductors and the different kinds of porous semiconductor materials that can be fabricated, the book moves on to describe the fabrication processes used in the production of porous semiconductor optical components. Concluding the text, a number of optical components based on porous semiconductor materials are discussed in depth.

Porous Semiconductors: Optical Properties and Applications provides a thorough grounding in the design, fabrication and theory behind the optical applications of porous semiconductor materials for graduate and undergraduate students interested in optics, photonics, MEMS, and material science. The book is also a valuable reference for scientists, researchers, and engineers in the field of optics and materials science.

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

This book provides an overview of recent developments in experiments probing the fractional quantum Hall (FQH) states of the second Landau level, especially the \nu=5/2 state. It summarizes the state-of-the-art understanding of these FQH states. It furthermore describes how the properties of the FQH states can be probed experimentally, by investigating tunneling and confinement properties. The progress towards the realization of an experiment, allowing to probe the potentially non-Abelian statistics of the quasiparticle excitations at \nu=5/2 is discussed. The book is intended as a reference for graduate students, PostDocs and researchers starting in the field. The experimental part of this book gives practical advice for solving the experimental challenges which researchers studying highly fragile FQH states are faced with.

The transmission speed of data communication systems is forecast to increase exponentially over the next decade. Development of both Si-based high-speed drivers as well as III-V-semiconductor-based high-speed vertical cavity surface emitting lasers (VCSELs) are prerequisites for future ultrahigh data-rate systems. This thesis presents: - a survey of the present state of the art of VCSELs - a systematic investigation of the various effects limiting present VCSELs - a catalogue of solutions to overcome present limits - detailed progress in modelling, fabricating and testing the currently most advanced VCSELs at the two commercially most important wavelengths.

Written by leading international experts, this book summarizes the advances in sample preparation, design and construction of dangling bond atomic scale wires and logic gate circuits at the surface of a passivated semi-conductor. Individual chapters cover different aspects of the sample fabrication from research and development point of view, present design and construction as well as microscopic and spectroscopic characteristics of single dangling atomic wires and logic gates, and discuss the tools for design of large atomic scale circuit on a surface.This edited volume includes selected contributions from the "International Workshop on Atomic Wires" held in Krakow in September 2014 completed and updated with most current results up to mid-2016, and offers for the first time an overview of up-to-date knowledge in the burgeoning field of atomic scale circuits. The book will appeal to researchers and scholars interested in nanoscience and its various sub-fields including, in particular, molecular electronics, atomic scale electronics and nanoelectronics.

Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.

This thesis elucidates electron correlation effects in topological matter whose electronic states hold nontrivial topological properties robust against small perturbations. In addition to a comprehensive introduction to topological matter, this thesis provides a new perspective on correlated topological matter. The book comprises three subjects, in which electron correlations in different forms are considered. The first focuses on Coulomb interactions for massless Dirac fermions. Using a perturbative approach, the author reveals emergent Lorentz invariance in a low-energy limit and discusses how to probe the Lorentz invariance experimentally. The second subject aims to show a principle for synthesizing topological insulators with common, light elements. The interplay between the spin-orbit interaction and electron correlation is considered, and Hund's rule and electron filling are consequently found to play a key role for a strong spin-orbit interaction important for topological insulators. The last subject is classification of topological crystalline insulators in the presence of electron correlation. Unlike non-interacting topological insulators, such two- and three-dimensional correlated insulators with mirror symmetry are demonstrated to be characterized, respectively, by the Z4 and Z8 group by using the bosonization technique and a geometrical consideration.

Harmonically modulated luminescence combines the advantages of highly sensitive luminescence metrology with an immediate dynamic access to carrier lifetime in semiconductors at a minimum of required a priori information. The present work covers theoretical, conceptual, and experimental advances of the harmonically modulated luminescence technique. Theoretical constraints of dynamic carrier lifetime techniques are rigorously elaborated, including the proof of their differential nature and their characteristics at nonuniform spatial distributions of recombination rate. The pathway toward a unified, reliable, and versatile harmonically modulated carrier lifetime metrology is delineated - covering the entire solar cell production chain from bare ingots to finished solar cells. Accurate access to miscellaneous relevant recombination and transport properties via harmonically modulated luminescence is demonstrated and experimentally validated, embracing injection-dependent carrier lifetimes at extremely low injection conditions, a spatially resolved carrier lifetime calibration of luminescence images, and accurate approaches to both net dopant concentration and minority carrier mobility.

This book presents a new filter design approach and concentrates on the circuit techniques that can be utilized when designing continuous-time low-pass filters in modern ultra-deep-submicron CMOS technologies for integrated wideband radio receivers. Coverage includes system-level issues related to the design and implementation of a complete single-chip radio receiver and related to the design and implementation of a filter circuit as a part of a complete single-chip radio receiver.

Presents a new filter design approach, emphasizing low-voltage circuit solutions that can be implemented in modern, ultra-deep-submicron CMOS technologies;Includes filter circuit implementations designed as a part of a single-chip radio receiver in modern 1.2V 0.13um and 65nm CMOS;Describes design and implementation of a continuous-time low-pass filter for a multicarrier WCDMA base-station;Emphasizes system-level considerations throughout.

The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green Electronics B. Microelectronic Circuits and Systems C. Integrated Circuits and Packaging Technologies D. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: "The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan. "Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan. "The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. "Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.

The objective of this book is to provide an up-to-date comprehensive descr- tion of the Kamimura-Suwa model, which is the ?rst of the present rep- sentative two-component theories in high temperature superconductivity. In 1986 George Bednorz and Karl Alex Muller .. made the remarkable discovery ofsuperconductivitywithanunbelievinglyhighvalueofT = 35K,bysubs- c 2+ 3+ tuting Ba ions for La ions in the antiferromagnetic insulator La CuO . 2 4 Soon after this discoveryT rose to 90K by synthesizing YBa Cu O with c 2 3 7?? ade?citinoxygen. Furtherexplorationfornewcopperoxidesuperconducting materials with higherT led to the discovery of Bi-Sr-Ca-Cu-O, Tl-Ba-Ca- c Cu-O and Hg-Ba-Ca-Cu-O compounds in subsequent years. The new class of copper oxide compounds mentioned above is called "cuprates". At present T = 135K under ambient pressure andT = 164K under 31 GPa observed c c in HgBa Ca Cu O are the highest value so far obtained. The Kamimura- 2 2 3 8 Suwa model, which was originally developed in 1993, is a theory of these real copper oxide superconducting materials. Since undoped La CuO is a 2 4 Mott-Hubbard antiferromagnetic insulator, its electronic structure can not beexplained bytheordinaryone-electron energybandtheory. Inthiscontext the important role of electron-correlation was pointed out. 2+ On theother hand, ad-hole state in each Cu ion in theligand ?eld with octahedral symmetry is orbitally doubly-degenerate so that it is subject to strong Jahn-Teller interaction in La CuO. Asaresult,aCuO octahedron 2 4 6 in La CuO is elongated along thec-axis due to the Jahn-Teller distortion.

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

The fact that there are more embedded computers than general-purpose computers and that we are impacted by hundreds of them every day is no longer news. What is news is that their increasing performance requirements, complexity and capabilities demand a new approach to their design.
Fisher, Faraboschi, and Young describe a new age of embedded computing design, in which the processor is central, making the approach radically distinct from contemporary practices of embedded systems design. They demonstrate why it is essential to take a computing-centric and system-design approach to the traditional elements of nonprogrammable components, peripherals, interconnects and buses. These elements must be unified in a system design with high-performance processor architectures, microarchitectures and compilers, and with the compilation tools, debuggers and simulators needed for application development.
In this landmark text, the authors apply their expertise in highly interdisciplinary hardware/software development and VLIW processors to illustrate this change in embedded computing. VLIW architectures have long been a popular choice in embedded systems design, and while VLIW is a running theme throughout the book, embedded computing is the core topic. Embedded Computing examines both in a book filled with fact and opinion based on the authors many years of R&D experience.
- Complemented by a unique, professional-quality embedded tool-chain on the authors' website, http: //www.vliw.org/book
- Combines technical depth with real-world experience
- Comprehensively explains the differences between general purpose computing systems and embedded systems at the hardware, software, tools and operating system levels.
- Uses concrete examples to explain and motivate the trade-offs.

This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.

Integrated Optics explains the subject of optoelectronic devices and their use in integrated optics and fiber optic systems. The approach taken is to emphasize the physics of how devices work and how they can be (and have been) used in various applications as the field of optoelectronics has progressed from microphotonics to nanophotonics. Illustrations and references from technical journals have been used to demonstrate the relevance of the theory to currently important topics in industry. By reading this book, scientists, engineers, students and engineering managers can obtain an overall view of the theory and the most recent technology in Integrated Optics.

The problem of conventional, low-temperature superconductivity has been regarded as solved since the seminal work of Bardeen, Cooper, and Schrieffer (BCS) more than 50 years ago. However, the theory does not allow accurate predictions of some of the most fundamental properties of a superconductor, including the superconducting energy gap on the Fermi surface. This thesis describes the development and scientific implementation of a new experimental method that puts this old problem into an entirely new light. The nominee has made major contributions to the development and implementation of a new experimental method that enhances the resolution of spectroscopic experiments on dispersive lattice-vibrational excitations (the "glue" responsible for Cooper pairing of electrons in conventional superconductors) by more than two orders of magnitude. Using this method, he has discovered an unexpected relationship between the superconducting energy gap and the geometry of the Fermi surface in the normal state, both of which leave subtle imprints in the lattice vibrations that could not be resolved by conventional spectroscopic methods. He has confirmed this relationship on two elemental superconductors and on a series of metallic alloys. This indicates that a mechanism qualitatively beyond the standard BCS theory determines the magnitude and anisotropy of the superconducting gap.

A comprehensive and state-of-the-art resource for the design and fabrication of IGBT

Semiconductor devices, particularly the insulated gate bipolar transistor (IGBT), form the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. Since its conception as a switching device, improvements and innovative design ideas have established IGBT as a rugged contender in the competitive electronics field.

Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter, including chapters on:

• Non-punchthrough, punchthrough, vertical double diffused MOSFET and trench-gate IGBTs; improved lateral and novel IGBT structures; and emerging technologies
• Steady-state and dynamic operation, and soft switching performance; safe operating area and reliability tests of IGBT
• IGBT physics, device and circuit models
• IGBT unit cell design and latching suppression techniques
• IGBT fabrication steps and process design
• IGBT power modules

Unique in focusing on IGBT in its entirety, this book will be an invaluable resource for engineering students and professionals alike.

This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3C-SiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this polytype could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.

Evolvable hardware (EHW) is based on the idea of combining a reconfigurable hardware device with genetic algorithms to execute reconfiguration autonomously. FPGA (Field Programmable Gate Array) and PLD (Programmable Logic Devices) are typical examples of reconfigurable hardware devices, for which there is already a market worth more than USD2 Billion US dollars and growing at 23 per cent per year. An example of EHW is NASA's Space Technology 5 nanosatellites, which are scheduled to start measuring Earth's magnetosphere in late 2004. They were designed by NASA engineers using genetic algorithms and 32 Linux PCs. The computers generated small antenna-constructing programs (the genotypes) and executed them to produce designs (the phenotypes). If deployed it will be the first piece of evolved hardware ever to be launched into space.

This book explores the aggregation-induced emission (AIE) effect, which has opened new avenues for the development of advanced luminogenic materials in the aggregate or solid state. By enabling light emission in the practically useful solid state, AIE has the potential to significantly expand the technological applications of luminescent materials. This book addresses principles, methods, and applications of AIEs, offering a new platform for the investigation of light-emitting processes from luminogen aggregates. Applications of AIE include biomedical diagnostics, sensor materials, and optoelectronic devices, among others, and are described in detail within the book. The development of a new generation of AIEgens, a deep understanding of the AIE mechanism(s), and the exploration of advanced technological applications will enable this exciting field to develop further. Headed by the pioneering researcher who started the field, Professor Ben Zhong Tang, this book combines both principles and applications and brings together global researchers in the field to report the progress, current challenges, and potential breakthroughs that may be accomplished in the near future. Provides an authoritative account of the fundamentals, properties, and potential of AIE by the pioneer of this active, highly-researched field; Highlights technological applications of AIE spanning biomedicine, sensor materials, and optoelectronics, among others; Presents a comprehensive view on challenges in the further development of AIE and derived technologies.

This book introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy that are essential to determine microscopic defect structures. Many different magnetic resonance methods are required for investigating the microscopic and electronic properties of solids and uncovering correlations between those properties. In addition to EPR, such methods include electron nuclear double resonance (ENDOR), electronically and optically detected EPR (also known as ODENDOR), and electronically and optically detected ENDOR. This book comprehensively discusses experimental, technological, and theoretical aspects of these techniques from a practical point of view, with examples of semiconductors and insulators. While the non-specialist learns about the potential of the different methods, the researcher finds help in the application of commercial apparatus and guidance from ab initio theory for deriving structure models from data.

Better understand the mechanism of degradation, and gain insight into the major degradation modes of optical devices fabricated from three different systems with this book. It explains the character of defects and imperfections induced during material growth and fabrication, presents techniques for failure analysis, and describes methods for elimination of defect-generating mechanisms.