An epic account of the decades-long battle to control what has emerged as the world's most critical resource—microchip technology—with the United States and China increasingly in conflict.

You may be surprised to learn that microchips are the new oil—the scarce resource on which the modern world depends. Today, military, economic, and geopolitical power are built on a foundation of computer chips. Virtually everything—from missiles to microwaves, smartphones to the stock market—runs on chips. Until recently, America designed and built the fastest chips and maintained its lead as the #1 superpower. Now, America's edge is slipping, undermined by competitors in Taiwan, Korea, Europe, and, above all, China. Today, as Chip War reveals, China, which spends more money each year importing chips than it spends importing oil, is pouring billions into a chip-building initiative to catch up to the US. At stake is America's military superiority and economic prosperity.

Economic historian Chris Miller explains how the semiconductor came to play a critical role in modern life and how the U.S. become dominant in chip design and manufacturing and applied this technology to military systems. America's victory in the Cold War and its global military dominance stems from its ability to harness computing power more effectively than any other power. But here, too, China is catching up, with its chip-building ambitions and military modernization going hand in hand. America has let key components of the chip-building process slip out of its grasp, contributing not only to a worldwide chip shortage but also a new Cold War with a superpower adversary that is desperate to bridge the gap.

Illuminating, timely, and fascinating, Chip War shows that, to make sense of the current state of politics, economics, and technology, we must first understand the vital role played by chips.

In conventional metals, various transport coefficients are scaled according to the quasiparticle relaxation time, \tau, which implies that the relaxation time approximation (RTA) holds well. However, such a simple scaling does not hold in many strongly correlated electron systems, reflecting their unique electronic states. The most famous example would be cuprate high-Tc superconductors (HTSCs), where almost all the transport coefficients exhibit a significant deviation from the RTA results. To better understand the origin of this discrepancy, we develop a method for calculating various transport coefficients beyond the RTA by employing field theoretical techniques. Near the magnetic quantum critical point, the current vertex correction (CVC), which describes the electron-electron scattering beyond the relaxation time approximation, gives rise to various anomalous transport phenomena. We explain anomalous transport phenomena in cuprate HTSCs and other metals near their magnetic or orbital quantum critical point using a uniform approach. We also discuss spin related transport phenomena in strongly correlated systems. In many d- and f-electron systems, the spin current induced by the spin Hall effect is considerably greater because of the orbital degrees of freedom. This fact attracts much attention due to its potential application in spintronics. We discuss various novel charge, spin and heat transport phenomena in strongly correlated metals.

Solid State Lighting Reliability: Components to Systems begins with an explanation of the major benefits of solid state lighting (SSL) when compared to conventional lighting systems including but not limited to long useful lifetimes of 50,000 (or more) hours and high efficacy. When designing effective devices that take advantage of SSL capabilities the reliability of internal components (optics, drive electronics, controls, thermal design) take on critical importance. As such a detailed discussion of reliability from performance at the device level to sub components is included as well as the integrated systems of SSL modules, lamps and luminaires including various failure modes, reliability testing and reliability performance. A follow-up, Solid State Lighting Reliability Part 2, was published in 2017.

Dynamic Fracture of Piezoelectric Materials focuses on the Boundary Integral Equation Method as an efficient computational tool. The presentation of the theoretical basis of piezoelectricity is followed by sections on fundamental solutions and the numerical realization of the boundary value problems. Two major parts of the book are devoted to the solution of problems in homogeneous and inhomogeneous solids. The book includes contributions on coupled electro-mechanical models, computational methods, its validation and the simulation results, which reveal different effects useful for engineering design and practice. The book is self-contained and well-illustrated, and it serves as a graduate-level textbook or as extra reading material for students and researchers.

Porous Semiconductors: Optical Properties and Applications provides an examination of porous semiconductor materials. Beginning with a description of the basic electrochemistry of porous semiconductors and the different kinds of porous semiconductor materials that can be fabricated, the book moves on to describe the fabrication processes used in the production of porous semiconductor optical components. Concluding the text, a number of optical components based on porous semiconductor materials are discussed in depth.

Porous Semiconductors: Optical Properties and Applications provides a thorough grounding in the design, fabrication and theory behind the optical applications of porous semiconductor materials for graduate and undergraduate students interested in optics, photonics, MEMS, and material science. The book is also a valuable reference for scientists, researchers, and engineers in the field of optics and materials science.

John Morton offers a uniquely concise and practical guide to getting up and running with the PIC Microcontroller. The PIC is one of the most popular of the microcontrollers that are transforming electronic project work and product design, and this book is the ideal introduction for students, teachers, technicians and electronics enthusiasts.
Assuming no prior knowledge of microcontrollers and introducing the PIC Microcontroller's capabilities through simple projects, this book is ideal for electronics hobbyists, students, school pupils and technicians. The step-by-step explanations and the useful projects make it ideal for student and pupil self-study: this is not just a reference book - you start work with the PIC microcontroller straight away.
The revised third edition focuses entirely on the re-programmable flash PIC microcontrollers such as the PIC16F54, PIC16F84 and the extraordinary 8-pin PIC12F508 and PIC12F675 devices.
* Demystifies the leading microcontroller for students, engineers an hobbyists
* Emphasis on putting the PIC to work, not theoretical microelectronics
* Simple programs and circuits introduce key features and commands through project work

The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green Electronics B. Microelectronic Circuits and Systems C. Integrated Circuits and Packaging Technologies D. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: "The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan. "Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan. "The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. "Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.

This book focuses on the development of liquid crystal displays (LCDs) and liquid crystal materials (LCs) in Japan. The Committee of Organic Materials Research for Information Sciences of the Japan Society for the Promotion of Science (JSPS) planned the book to document essential LCD innovations and developments since the beginnings of the field-effect LCD technology in 1970. The book illustrates the remarkable effort and progress behind those flat, lightweight, and high-information-content LCDs that have become the indispensable human-machine interface for virtually all electronic devices. In contrast to other publications on this topic, the book illustrates the interdisciplinary character of the LCD technology and its crucial importance for technological progress of the field far beyond displays. It also gives insights into breakthrough innovations not revealed in other publications. Moreover, prospects for the development of LC research toward new fields of applications are provided. In line with its interdisciplinary character, the book targets researchers in basic science as well as engineers and researchers in industry.

This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3C-SiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this polytype could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Written by leading international experts, this book summarizes the advances in sample preparation, design and construction of dangling bond atomic scale wires and logic gate circuits at the surface of a passivated semi-conductor. Individual chapters cover different aspects of the sample fabrication from research and development point of view, present design and construction as well as microscopic and spectroscopic characteristics of single dangling atomic wires and logic gates, and discuss the tools for design of large atomic scale circuit on a surface.This edited volume includes selected contributions from the "International Workshop on Atomic Wires" held in Krakow in September 2014 completed and updated with most current results up to mid-2016, and offers for the first time an overview of up-to-date knowledge in the burgeoning field of atomic scale circuits. The book will appeal to researchers and scholars interested in nanoscience and its various sub-fields including, in particular, molecular electronics, atomic scale electronics and nanoelectronics.

Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.

The fact that there are more embedded computers than general-purpose computers and that we are impacted by hundreds of them every day is no longer news. What is news is that their increasing performance requirements, complexity and capabilities demand a new approach to their design.
Fisher, Faraboschi, and Young describe a new age of embedded computing design, in which the processor is central, making the approach radically distinct from contemporary practices of embedded systems design. They demonstrate why it is essential to take a computing-centric and system-design approach to the traditional elements of nonprogrammable components, peripherals, interconnects and buses. These elements must be unified in a system design with high-performance processor architectures, microarchitectures and compilers, and with the compilation tools, debuggers and simulators needed for application development.
In this landmark text, the authors apply their expertise in highly interdisciplinary hardware/software development and VLIW processors to illustrate this change in embedded computing. VLIW architectures have long been a popular choice in embedded systems design, and while VLIW is a running theme throughout the book, embedded computing is the core topic. Embedded Computing examines both in a book filled with fact and opinion based on the authors many years of R&D experience.
- Complemented by a unique, professional-quality embedded tool-chain on the authors' website, http: //www.vliw.org/book
- Combines technical depth with real-world experience
- Comprehensively explains the differences between general purpose computing systems and embedded systems at the hardware, software, tools and operating system levels.
- Uses concrete examples to explain and motivate the trade-offs.

This book presents a new filter design approach and concentrates on the circuit techniques that can be utilized when designing continuous-time low-pass filters in modern ultra-deep-submicron CMOS technologies for integrated wideband radio receivers. Coverage includes system-level issues related to the design and implementation of a complete single-chip radio receiver and related to the design and implementation of a filter circuit as a part of a complete single-chip radio receiver.

Presents a new filter design approach, emphasizing low-voltage circuit solutions that can be implemented in modern, ultra-deep-submicron CMOS technologies;Includes filter circuit implementations designed as a part of a single-chip radio receiver in modern 1.2V 0.13um and 65nm CMOS;Describes design and implementation of a continuous-time low-pass filter for a multicarrier WCDMA base-station;Emphasizes system-level considerations throughout.

Harmonically modulated luminescence combines the advantages of highly sensitive luminescence metrology with an immediate dynamic access to carrier lifetime in semiconductors at a minimum of required a priori information. The present work covers theoretical, conceptual, and experimental advances of the harmonically modulated luminescence technique. Theoretical constraints of dynamic carrier lifetime techniques are rigorously elaborated, including the proof of their differential nature and their characteristics at nonuniform spatial distributions of recombination rate. The pathway toward a unified, reliable, and versatile harmonically modulated carrier lifetime metrology is delineated - covering the entire solar cell production chain from bare ingots to finished solar cells. Accurate access to miscellaneous relevant recombination and transport properties via harmonically modulated luminescence is demonstrated and experimentally validated, embracing injection-dependent carrier lifetimes at extremely low injection conditions, a spatially resolved carrier lifetime calibration of luminescence images, and accurate approaches to both net dopant concentration and minority carrier mobility.

This text on the electrical, optical, magnetic, and thermal properties of materials stresses concepts rather than mathematical formalism. Suitable for advanced undergraduates, it is intended for materials and electrical engineers who want to gain a fundamental understanding of alloys, semiconductor devices, lasers, magnetic materials, and so forth. The book is organized to be used in a one-semester course; to that end each section of applications, after the introduction to the fundamentals of electron theory, can be read independently of the others. Many examples from engineering practice serve to provide an understanding of common devices and methods. Among the modern applications covered are: high-temperature superconductors, optoelectronic materials, semiconductor device fabrication, xerography, magneto-optic memories, and amorphous ferromagnetics. The fourth edition has been revised and updated with an emphasis on the applications sections, which now cover devices of the next generation of electronics.

"Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.

This volume provides expert coverage of the state-of-the-art in sol-gel materials for functional applications in energy, environment and electronics. The use of sol-gel technology has become a hotbed for cutting edge developments in many fields due to the accessibility of advanced materials through low energy processes. The book offers a broad view of this growing research area from basic science through high-level applications with the potential for commercialization and industrial use. Taking an integrated approach, expert chapters present a wide range of topics, from photocatalysts, solar cells and optics, to thin films and materials for energy storage and conversion, demonstrating the combined use of chemistry, physics, materials science and engineering in the search for solutions to some of the most challenging problems of our time.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.
The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.
This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
Broad review of optoelectronic applications of III-V nitrides

* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

The high speed lasers operating at wavelength of 1.3 um and 1.55 um are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.

"Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology" organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics
* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.
* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas
* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community."

This book covers the basics, realization and materials for high power laser systems and high power radiation interaction with matter. The physical and technical fundamentals of high intensity laser optics and adaptive optics and the related physical processes in high intensity laser systems are explained. A main question discussed is: What is power optics? In what way is it different from ordinary optics widely used in cameras, motion-picture projectors, i.e., for everyday use? An undesirable consequence of the thermal deformation of optical elements and surfaces was discovered during studies of the interaction with powerful incident laser radiation. The requirements to the fabrication, performance and quality of optical elements employed within systems for most practical applications are also covered. The high-power laser performance is generally governed by the following: (i) the absorption of incident optical radiation (governed primarily by various absorption mechanisms), (ii) followed by a temperature increase and response governed primarily by thermal properties and (iii) the thermo-optical and thermo-mechanical response of distortion, stress, fracture, etc. All this needs to be understood to design efficient, compact, reliable and useful high power systems for many applications under a variety of operating conditions, pulsed, continuous wave and burst mode of varying duty cycles. The book gives an overview of an important spectrum of related topics like laser resonator configurations, intermetallic optical coatings, heat carriers for high power optics, cellular materials, high-repetition-rate lasers and mono-module disk lasers for high power optics.