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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
This book covers the basics, realization and materials for high power laser systems and high power radiation interaction with matter. The physical and technical fundamentals of high intensity laser optics and adaptive optics and the related physical processes in high intensity laser systems are explained. A main question discussed is: What is power optics? In what way is it different from ordinary optics widely used in cameras, motion-picture projectors, i.e., for everyday use? An undesirable consequence of the thermal deformation of optical elements and surfaces was discovered during studies of the interaction with powerful incident laser radiation. The requirements to the fabrication, performance and quality of optical elements employed within systems for most practical applications are also covered. The high-power laser performance is generally governed by the following: (i) the absorption of incident optical radiation (governed primarily by various absorption mechanisms), (ii) followed by a temperature increase and response governed primarily by thermal properties and (iii) the thermo-optical and thermo-mechanical response of distortion, stress, fracture, etc. All this needs to be understood to design efficient, compact, reliable and useful high power systems for many applications under a variety of operating conditions, pulsed, continuous wave and burst mode of varying duty cycles. The book gives an overview of an important spectrum of related topics like laser resonator configurations, intermetallic optical coatings, heat carriers for high power optics, cellular materials, high-repetition-rate lasers and mono-module disk lasers for high power optics.
This volume provides expert coverage of the state-of-the-art in sol-gel materials for functional applications in energy, environment and electronics. The use of sol-gel technology has become a hotbed for cutting edge developments in many fields due to the accessibility of advanced materials through low energy processes. The book offers a broad view of this growing research area from basic science through high-level applications with the potential for commercialization and industrial use. Taking an integrated approach, expert chapters present a wide range of topics, from photocatalysts, solar cells and optics, to thin films and materials for energy storage and conversion, demonstrating the combined use of chemistry, physics, materials science and engineering in the search for solutions to some of the most challenging problems of our time.
"Phase Change Materials: Science and Applications" provides a unique introduction of this rapidly developing field. Clearly written and well-structured, this volume describes the material science of these fascinating materials from a theoretical and experimental perspective. Readers will find an in-depth description of their existing and potential applications in optical and solid state storage devices as well as reconfigurable logic applications. Researchers, graduate students and scientists with an interest in this field will find "Phase Change Materials" to be a valuable reference.
How much knowledge can we gain about a physical system and to
what degree can we control it? In quantum optical systems, such as
ion traps or neutral atoms in cavities, single particles and their
correlations can now be probed in a way that is fundamentally
limited only by the laws of quantum mechanics. In contrast, quantum
many-body systems pose entirely new challenges due to the enormous
number of microscopic parameters and their small length- and short
time-scales.
This book brings together the recent cutting-edge work on computational methods in photonics and their applications. The latest advances in techniques such as the Discontinuous Galerkin Time Domain method, Finite Element Time Domain method, Finite Difference Time Domain method as well as their applications are presented. Key aspects such as modelling of non-linear effects (Second Harmonic Generation, lasing in fibers, including gain nonlinearity in metamaterials), the acousto-optic effect, and the hydrodynamic model to explain electron response in nanoplasmonic structures are included. The application areas covered include plasmonics, metamaterials, photonic crystals, dielectric waveguides, fiber lasers. The chapters give a representative survey of the corresponding area.
This thesis reports a major breakthrough in discovering the superconducting mechanism in CeCoIn5, the "hydrogen atom" among heavy fermion compounds. By developing a novel theoretical formalism, the study described herein succeeded in extracting the crucial missing element of superconducting pairing interaction from scanning tunneling spectroscopy experiments. This breakthrough provides a theoretical explanation for a series of puzzling experimental observations, demonstrating that strong magnetic interactions provide the quantum glue for unconventional superconductivity. Additional insight into the complex properties of strongly correlated and topological materials was provided by investigating their non-equilibrium charge and spin transport properties. The findings demonstrate that the interplay of magnetism and disorder with strong correlations or topology leads to complex and novel behavior that can be exploited to create the next generation of spin electronics and quantum computing devices.
Many new topologies and circuit design techniques have emerged recently to improve the performance of active inductors, but a comprehensive treatment of the theory, topology, characteristics, and design constraint of CMOS active inductors and transformers, and a detailed examination of their emerging applications in high-speed analog signal processing and data communications over wire and wireless channels, is not available. This book is an attempt to provide an in-depth examination and a systematic presentation of the operation principles and implementation details of CMOS active inductors and transformers, and a detailed examination of their emerging applications in high-speed analog signal processing and data communications over wire and wireless channels. The content of the book is drawn from recently published research papers and are not available in a single, cohesive book. Equal emphasis is given to the theory of CMOS active inductors and transformers, and their emerging applications. Major subjects to be covered in the book include: inductive characteristics in high-speed analog signal processing and data communications, spiral inductors and transformers - modeling and limitations, a historical perspective of device synthesis, the topology, characterization, and implementation of CMOS active inductors and transformers, and the application of CMOS active inductors and transformers in high-speed analog and digital signal processing and data communications.
From the reviews: " ...] a welcome addition to the literature. ...] This book promises to make a valuable contribution to the education of graduate students in electrical and computer engineering, and a very useful addition to the library of the maturer investigator in SoC designs or related fields." Microelectronics Reliability
This book traces the quest to use nanostructured media for novel and improved optoelectronic devices. Starting with the invention of the heterostructure laser, the progression via thin films to quasi zero-dimensional quantum dots has led to novel device concepts and tremendous improvements in device performance. Along the way sophisticated methods of material preparation and characterization have been developed. Novel physical phenomena have emerged and are now used in devices such as lasers and optical amplifiers. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.
1 Structures of and Bonding in Electronic Materials.- 1. Introduction.- 2. The Structure of the Group IV Elements and of III-V and II-VI Semiconductors.- 3. Bonding in and Relationships Between Zinc Blende and Wurtzite-Type Compounds.- 4. Other Structure Types.- References.- 2 Electron Energy Bands.- 1. Introduction.- 2. Models.- 2.1. The Nearly Free Electron Model.- 2.2. The Tight-Binding Model.- 2.3. The Relationship Between the Results of the Two Models.- 2.4. The Relationship Between Maximum Energy and k.- 2.5. Three-Dimensional Effects.- 2.6. Real Materials.- 3. Effective Mass.- 4. Positive Holes.- 5. Methods of Computing Band Structure.- 6. Conductance, the Octet Rule, and Bands.- 7. Postscript: The Kronig-Penney Model.- References.- 3 Electrical Properties of Semiconductors.- 1. Introduction.- 2. Intrinsic Semiconductors.- 3. Extrinsic Semiconductors.- 4. Scattering and Mobility of Charge Carriers.- 5. High-Field Effects.- 4 Optical Properties.- 1. Introduction.- 2. The Classical Approach.- 2.1. Relation to Conductivity.- 2.2. Optical Constants and Relative Permittivity.- 2.3. Resonance.- 3. Absorption Mechanisms.- 3.1. Fundamental Absorption.- 3.2. Other Mechanisms.- 4. Photoconductivity.- 5. Emission.- 5.1. Spontaneous Emission.- 5.2. Stimulated Emission.- 5.3. Nonradiative Recombination.- 6. Anisotropic Materials.- 7. Polarized Light.- 8. Thin-Film Systems.- 5 Interfaces and Low-Dimensional Structures.- 1. Introduction.- 2. Band Structure at a Heterojunction Interface.- 3. Low-Dimensional Effects.- 4. New Effects in Low-Dimensional Structures.- 5. Materials Growth.- 6. Other Low-Dimensional Structures.- 7. Applications.- 8. Conclusions.- References.- 6 Key Electrical Devices.- 1. Introduction.- 2. Basic Semiconductor Diodes.- 2.1. The p-n Junction Diode.- 2.2. The Metal-Semiconductor or Schottky Diode.- 2.3. Ohmic Contacts.- 3. Bipolar Junction Transisistors.- 4. Field Effect Transistors.- 4.1. MOSFETs.- 4.2. JFETs and MESFETs.- 5. Materials for Electronic Devices: The Significance of Silicon.- 6. Gallium-Arsenide-Based Transistors.- 6.1. The GaAs MESFET.- 6.2. Heterojunction-Based Devices.- 7. Other Materials.- 8. Conclusions and Future Prospects.- References.- 7 Key Optoelectronic Devices.- 1. Introduction.- 2. Materials Technologies.- 2.1. Important Optoelectronic Materials.- 2.2. Epitaxy.- 3. Light-Emitting Devices.- 3.1. Basic Principles.- 3.2. Light-Emitting Diodes (LEDs).- 3.3. Semiconductor Lasers.- 4. Optical Detectors.- 5. Waveguide Components.- 6. Optoelectronic Integrated Circuits.- 7. Conclusions.- 8 Thermodynamics and Defect Chemistry of Compound Semiconductors.- 1. Introduction.- 2. Elements of Multicomponent Phase Equilibria.- 2.1. Gibbs's Phase Rule.- 2.2. Pressure-Temperature Equilibrium.- 2.3. Solid-Liquid Equilibria in Multicomponent Systems.- 2.4. Representation of the Activity Coefficients.- 3. Solid-Liquid Phase Equilibria in Ternary III-V Compounds...- 4. Solid-Gas Phase Equilibria in Multicomponent III-V compounds.- 5. Native Point Defects in Compound Semiconductors.- 6. The Incorporation of Solute (Dopant) Atoms.- 7. Summary and Conclusions.- References.- 9 Single Crystal Growth I: Melt Growth.- 1. Introduction: General Principles.- 2. Role of Melt Growth.- 3. Constraints to Melt Growth.- 3.1. Chemical Reactivity.- 3.2. Vapor Pressure.- 3.3. Mechanical.- 3.4. Fundamental.- 4. Techniques of Melt Growth.- 4.1. Vertical Pulling or Czochralski Growth.- 4.2. Float Zone.- 4.3. Horizontal Bridgman.- 4.4 Liquid Encapsulation.- 5. Fundamentals.- References.- 10 Single Crystal Growth II: Epitaxial Growth.- 1. Introduction: General Principles.- 2. Role of Epitaxy.- 3. Constraints to Epitaxial Growth.- 3.1. Liquid Phase Epitaxy (LPE).- 3.2. Vapor Phase Epitaxy (VPE).- 4. Techniques of Epitaxial Growth.- 4.1. Liquid Phase Epitaxy.- 4.2. Vapor Phase Epitaxy: Conventional Inorganic Epitaxy.- 4.3. Molecular Beam Epitaxy (MBE): Metalorganic Molecular Beam Epitaxy (MOMBE).- 4.4. Metalorganic Vapor Phase Ep...
This book is about the work of 10 great scientists; who they were and are, their personal background and how they achieved their outstanding results and took their prominent place in science history. We follow one of physics and science history's most enigmatic phenomena, superconductivity, through 100 years, from its discovery in 1911 to the present, not as a history book in the usual sense, but through close ups of the leading characters and their role in that story, the Nobel laureates, who were still among us in the years 2001-2004 when the main round of interviews was carried out. Since then two of them already passed away. For each one of the 10 laureates, the author tells their story by direct quotation from interviews in their own words. Each chapter treats one laureate. The author first gives a brief account of the laureates' scientific background and main contribution. Then each laureate tells his own story in his own words. This book is unique in its approach to science history.
The demand for high-performance submarine power cables is increasing as more and more offshore wind parks are installed, and the national electric grids are interconnected. Submarine power cables are installed for the highest voltages and power to transport electric energy under the sea between islands, countries and even continents. The installation and operation of submarine power cables is much different from land cables. Still, in most textbooks on electrical power systems, information on submarine cables is scarce. This book is closing the gap. Different species of submarine power cables and their application are explained. Students and electric engineers learn on the electric and mechanic properties of submarine cables. Project developers and utility managers will gain useful information on the necessary marine activities such as pre-laying survey, cable lay vessels, guard boats etc., for the submarine cable installation and repair. Investors and decision makers will find an overview on environmental aspects of submarine power cables. A comprehensive reference list is given for those who want further reading.
Organic and printed electronics can enable a revolution in the applications of electronics and this book offers readers an overview of the state-of-the-art in this rapidly evolving domain. The potentially low cost, compatibility with flexible substrates and the wealth of devices that characterize organic and printed electronics will make possible applications that go far beyond the well-known displays made with large-area silicon electronics. Since organic electronics are still in their early stage, undergoing transition from lab-scale and prototype activities to production, this book serves as a valuable snapshot of the current landscape of the different devices enabled by this technology, reviewing all applications that are developing and those can be foreseen. "
This thesis explores thermal transport in selected rare-earth-based intermetallic compounds to answer questions of great current interest. It also sheds light on the interplay of Kondo physics and Fermi surface changes. By performing thermal conductivity and electrical resistivity measurements at temperatures as low as 25mK, the author demonstrates that the Wiedemann-Franz law, a cornerstone of metal physics, is violated at precisely the magnetic-field-induced quantum critical point of the heavy-fermion metal YbRh2Si2. This first-ever observation of a violation has dramatic consequences, as it implies a breakdown of the quasiparticle picture. Utilizing an innovative technique to measure low-temperature thermal transport isothermally as a function of the magnetic field, the thesis interprets specific, partly newly discovered, high-field transitions in CeRu2Si2 and YbRh2Si2 as Lifshitz transitions related to a change in the Fermi surface. Lastly, by applying this new technique to thermal conductivity measurements of the skutterudite superconductor LaPt4Ge12, the thesis proves that the system is a conventional superconductor with a single energy gap. Thus, it refutes the widespread speculations about unconventional Cooper pairing in this material.
Active RC filters were first applied in the late 1950s. Since then,
there has been a rapid development in both theoretical research and
practical realization methods, as witnessed by the appearance of
some 3,000 publications on active RC filters. This abundance of
literature has, however, caused a great deal of confusion for
non-specialist engineers. In order to solve a problem of filter
design, a prolonged study is usually needed in order to make the
correct choice between a wide variety of filter structures.
Furthermore, most publications are intended to solve detailed
problems for experts in the field, with little useful contribution
for practising electrical engineers.
Despite the recent development and interest in the photonics of metallic wire structures, the relatively simple concepts and physics often remain obscured or poorly explained to those who do not specialize in the field. Electromagnetic Behaviour of Metallic Wire Structures provides a clear and coherent guide to understanding these phenomena without excessive numerical calculations. Including both background material and detailed derivations of the various different formulae applied, Electromagnetic Behaviour of Metallic Wire Structures describes how to extend basic circuit theory relating to voltages, currents, and resistances of metallic wire networks to include situations where the currents are no longer spatially uniform along the wire. This lays a foundation for a deeper understanding of the many new phenomena observed in meta-electromagnetic materials. Examples of applications are included to support this new approach making Electromagnetic Behaviour of Metallic Wire Structures a comprehensive and self-contained volume suitable for use by specialists, non-specialist, researchers and professionals in other relevant fields and even students.
This is a comprehensive guide to fault injection techniques used to evaluate the dependability of a digital system. The description and the critical analysis of different fault injection techniques and tools are authored by key scientists in the field of system dependability and fault tolerance.
Lead-free solders are used extensively as interconnection materials in electronic assemblies and play a critical role in the global semiconductor packaging and electronics manufacturing industry. Electronic products such as smart phones, notebooks and high performance computers rely on lead-free solder joints to connect IC chip components to printed circuit boards." Lead Free Solder: Mechanics and Reliability" provides in-depth design knowledge on lead-free solder elastic-plastic-creep and strain-rate dependent deformation behavior and its application in failure assessment of solder joint reliability. It includes coverage of advanced mechanics of materials theory and experiments, mechanical properties of solder and solder joint specimens, constitutive models for solder deformation behavior; numerical modeling and simulation of solder joint failure subject to thermal cycling, mechanical bending fatigue, vibration fatigue and board-level drop impact tests.
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas and lattices of dielectric resonators is discussed.
This book explores the new materials and the resultant new field of piezotronics. The growth and alignment of the zinc oxide nanostructures are discussed in detail because of its wide adoption in this field and its significance in optics, health, and sensing applications. The characterization of the piezotronic effect and how to distinguish it from other similar but, fundamentally different effects, like piezoresistive effect is also considered. The huge potential in the wearable and flexible devices, as well as organic materials, is further examined. The stain/stress sensing is introduced as an example of an application with piezotronic materials.
CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.
The book is devoted to the problem of microgeometry properties and anisotropy relations in modern piezo-active composites. These materials are characterized by various electromechanical properties and remarkable abilities to convert mechanical energy into electric energy and vice versa. Advantages of the performance of the composites are discussed in the context of the orientation effects, first studied by the authors for main connectivity patterns and with due regard to a large anisotropy of effective piezoelectric coefficients and electromechanical coupling factors. The novelty of the book consists in the systematization results of orientation effects, the anisotropy of piezoelectric properties and their role in forming considerable hydrostatic piezoelectric coefficients, electromechanical coupling factors and other parameters in the composites based on either ferroelectric ceramic or relaxor-ferroelectric single crystals.
Topological insulators are insulating in the bulk, but process
metallic states present around its boundary owing to the
topological origin of the band structure. The metallic edge or
surface states are immune to weak disorder or impurities, and
robust against the deformation of the system geometry. This book,
the first of its kind on topological insulators, presents a unified
description of topological insulators from one to three dimensions
based on the modified Dirac equation. A series of solutions of the
bound states near the boundary are derived, and the existing
conditions of these solutions are described. Topological invariants
and their applications to a variety of systems from one-dimensional
polyacetalene, to two-dimensional quantum spin Hall effect and
p-wave superconductors, and three-dimensional topological
insulators and superconductors or superfluids are introduced,
helping readers to better understand this fascinating new
field.
This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. * Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; * Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; * Provides both theoretical analysis and practical examples to illustrate design methodologies; * Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors. |
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