For the past seventy years, ferrites (magnetic ceramics) have been prized for a range of properties that has no equivalent in the existing metal magnetic materials. They have contributed to many important advances in electronics and new high-performance products are appearing all the time. Ferrite technology has produced greater progress in the past 15 years since the first edition was published. Many of the semiconductor and IC technology responsible for the computer and Internet explosion would not have been possible without the magnetic materials technology needed for powering and otherwise exploiting those developments.

Modern Ferrite Technology, 2nd ed, offers the readers an expert overview of the latest ferrite advances as well as their applications in electronic components. This volume develops the interplay among material properties, component specification and device requirements using ferrites. Throughout, emphasis is placed on practical technological concerns as opposed to mathematical and physical aspects of the subject.

The book traces the origin of the magnetic effect in ferrites from the level of the simplest particle and the increases the scope to the larger and larger hierarchies. From the desired magnetic properties the author deduces the physical and chemical material parameters, taking into consideration major chemistry, impurity levels, ceramic microstructures and grain boundary effects. He then discusses the processing conditions and associated conditions required for implementation. In addition to conventional ceramic techniques, he describes non-conventional methods such as coprecipitation, co-spray roasting and single crystal growth.

The secondsection of this book deals with a complete listing of the many important applications in the field including ferrites for permanent magnet, telecommunications, power supplies, memory systems magnetic recording and microwave applications.

The function of ferrites in each of these applications is described. The requirements of the electronic circuit and device are broken down into the individual component specifications with regard to size and configuration. Design criteria for power level, degree of stability and cost are then considered.

A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.

This book reviews progress towards quantum simulators based on photonic and hybrid light-matter systems, covering theoretical proposals and recent experimental work. Quantum simulators are specially designed quantum computers. Their main aim is to simulate and understand complex and inaccessible quantum many-body phenomena found or predicted in condensed matter physics, materials science and exotic quantum field theories. Applications will include the engineering of smart materials, robust optical or electronic circuits, deciphering quantum chemistry and even the design of drugs. Technological developments in the fields of interfacing light and matter, especially in many-body quantum optics, have motivated recent proposals for quantum simulators based on strongly correlated photons and polaritons generated in hybrid light-matter systems. The latter have complementary strengths to cold atom and ion based simulators and they can probe for example out of equilibrium phenomena in a natural driven-dissipative setting. This book covers some of the most important works in this area reviewing the proposal for Mott transitions and Luttinger liquid physics with light, to simulating interacting relativistic theories, topological insulators and gauge field physics. The stage of the field now is at a point where on top of the numerous theory proposals; experiments are also reported. Connecting to the theory proposals presented in the chapters, the main experimental quantum technology platforms developed from groups worldwide to realize photonic and polaritonic simulators in the laboratory are also discussed. These include coupled microwave resonator arrays in superconducting circuits, semiconductor based polariton systems, and integrated quantum photonic chips. This is the first book dedicated to photonic approaches to quantum simulation, reviewing the fundamentals for the researcher new to the field, and providing a complete reference for the graduate student starting or already undergoing PhD studies in this area.

Density functional theory (DFT) has become the standard workhorse for quantum mechanical simulations as it offers a good compromise between accuracy and computational cost.
However, there are many important systems for which DFT performs very poorly, most notably strongly-correlated materials, resulting in a significant recent growth in interest in 'beyond DFT' methods. The widely used DFT+U technique, in particular, involves the addition of explicit Coulomb repulsion terms to reproduce the physics of spatially-localised electronic subspaces.
The magnitude of these corrective terms, measured by the famous Hubbard U parameter, has received much attention but less so for the projections used to delineate these subspaces.
The dependence on the choice of these projections is studied in detail here and a method to overcome this ambiguity in DFT+U, by self-consistently determining the projections, is introduced.
The author shows how nonorthogonal representations for electronic states may be used to construct these projections and, furthermore, how DFT+U may be implemented with a linearly increasing cost with respect to system size.
The use of nonorthogonal functions in the context of electronic structure calculations is extensively discussed and clarified, with new interpretations and results, and, on this topic, this work may serve as a reference for future workers in the field."

Laser Diode Microsystems provides the reader with the basic knowledge and understanding required for using semiconductor laser diodes in optical microsystems and micro-optical electromechanic systems. This tutorial addresses the fundamentals of semiconductor laser operation and design, coupled with an overview of the types of laser diodes suitable for use in Microsystems, along with their distinguishing characteristics. Emphasis is placed on laser diode characterization and measurement as well as the assembly techniques and optical accessories required for incorporation of semiconductor lasers into complex microsystems. Equipped with typical results and calculation examples, this hand-on text helps readers to develop a feel for how to choose a laser diode, characterize it and incorporate it into a microsystem.

This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.

"System level testing is becoming increasingly important. It is driven by the incessant march of complexity ... which is forcing us to renew our thinking on the processes and procedures that we apply to test and diagnosis of systems. In fact, the complexity defines the system itself which, for our purposes, is Aany aggregation of related elements that together form an entity of sufficient complexity for which it is impractical to treat all of the elements at the lowest level of detail . System approaches embody the partitioning of problems into smaller inter-related subsystems that will be solved together. Thus, words like hierarchical, dependence, inference, model, and partitioning are frequent throughout this text. Each of the authors deals with the complexity issue in a similar fashion, but the real value in a collected work such as this is in the subtle differences that may lead to synthesized approaches that allow even more progress. The works included in this volume are an outgrowth of the 2nd International Workshop on System Test and Diagnosis held in Alexandria, Virginia in April 1998. The first such workshop was held in Freiburg, Germany, six years earlier. In the current workshop nearly 50 experts from around the world struggled over issues concerning the subject... In this volume, a select group of workshop participants was invited to provide a chapter that expanded their workshop presentations and incorporated their workshop interactions... While we have attempted to present the work as one volume and requested some revision to the work, the content of the individual chapters was not edited significantly. Consequently, you will see different approaches to solving the sameproblems and occasional disagreement between authors as to definitions or the importance of factors. ... The works collected in this volume represent the state-of-the-art in system test and diagnosis, and the authors are at the leading edge of that science...." From the Preface

In modern electoral processes, Information and Communication Technologies play a crucial role, whether used in voter registration, ballot casting, or processing of results. Securing these systems is a necessary step in ensuring the fairness of the democratic process. Design, Development, and Use of Secure Electronic Voting Systems analyzes current research on the integration of modern technologies with traditional democratic systems, providing a framework for designing and deploying electronic voting systems in any context or society. Stakeholders, researchers, architects, designers, and scholars interested in the use of electronic systems in government processes will use this book to gain a broader understanding of some of the latest advances in this emerging field.

This book first provides a comprehensive coverage of state-of-the-art validation solutions based on real-time signal tracing to guarantee the correctness of VLSI circuits. The authors discuss several key challenges in post-silicon validation and provide automated solutions that are systematic and cost-effective. A series of automatic tracing solutions and innovative design for debug (DfD) techniques are described, including techniques for trace signal selection for enhancing visibility of functional errors, a multiplexed signal tracing strategy for improving functional error detection, a tracing solution for debugging electrical errors, an interconnection fabric for increasing data bandwidth and supporting multi-core debug, an interconnection fabric design and optimization technique to increase transfer flexibility and a DfD design and associated tracing solution for improving debug efficiency and expanding tracing window. The solutions presented in this book improve the validation quality of VLSI circuits, and ultimately enable the design and fabrication of reliable electronic devices.

Metamaterials are artificially designed materials engineered to acquire their properties by their specific structure rather than their composition. They are considered a major scientific breakthrough and have attracted enormous attention over the past decade. The major challenge in obtaining an optical metamaterial active at visible frequencies is the fabrication of complex continuous metallic structures with nano metric features. This thesis presents the fabrication and characterization of optical metamaterials made by block copolymer self assembly. This approach allows fabrication of an intriguing and complex continuous 3D architecture called a gyroid, which is replicated into active plasmonic materials such as gold. The optical properties endowed by this particular gyroid geometry include reduction of plasma frequency, extraordinarily enhanced optical transmission, and a predicted negative refractive index. To date, this is the 3D optical metamaterial with the smallest features ever made.

Advances in the synthesis of new materials with often complex, nano-scaled structures require increasingly sophisticated experimental techniques that can probe the electronic states, the atomic magnetic moments and the magnetic microstructures responsible for the properties of these materials.

At the same time, progress in synchrotron radiation techniques has ensured that these light sources remain a key tool of investigation, e.g. synchrotron radiation sources of the third generation are able to support magnetic imaging on a sub-micrometer scale.

With the Sixth Mittelwihr School on Magnetism and Synchrotron Radiation the tradition of teaching the state-of-the-art on modern research developments continues and is expressed through the present set of extensive lectures provided in this volume. While primarily aimed at postgraduate students and newcomers to the field, this volume will also benefit researchers and lecturers actively working in the field.

examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs."

Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

Testing Static Random Access Memories covers testing of one of the important semiconductor memories types; it addresses testing of static random access memories (SRAMs), both single-port and multi-port. It contributes to the technical acknowledge needed by those involved in memory testing, engineers and researchers. The book begins with outlining the most popular SRAMs architectures. Then, the description of realistic fault models, based on defect injection and SPICE simulation, are introduced. Thereafter, high quality and low cost test patterns, as well as test strategies for single-port, two-port and any p-port SRAMs are presented, together with some preliminary test results showing the importance of the new tests in reducing DPM level. The impact of the port restrictions (e.g., read-only ports) on the fault models, tests, and test strategies is also discussed.
Features:
-Fault primitive based analysis of memory faults,
-A complete framework of and classification memory faults,
-A systematic way to develop optimal and high quality memory test algorithms,
-A systematic way to develop test patterns for any multi-port SRAM,
-Challenges and trends in embedded memory testing.

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.

Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction."

System-Level Design Techniques for Energy-Efficient Embedded Systems addresses the development and validation of co-synthesis techniques that allow an effective design of embedded systems with low energy dissipation. The book provides an overview of a system-level co-design flow, illustrating through examples how system performance is influenced at various steps of the flow including allocation, mapping, and scheduling. The book places special emphasis upon system-level co-synthesis techniques for architectures that contain voltage scalable processors, which can dynamically trade off between computational performance and power consumption. Throughout the book, the introduced co-synthesis techniques, which target both single-mode systems and emerging multi-mode applications, are applied to numerous benchmarks and real-life examples including a realistic smart phone.

Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.

The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

The present book provides recent developments in various in vivo imaging and sensing techniques such as photo acoustics (PA) imaging and microscopy, ultrasound-PA combined modalities, optical coherence tomography (OCT) and micro OCT, Raman and surface enhanced Raman scattering (SERS), Fluorescence lifetime imaging (FLI) techniques and nanoparticle enabled endoscopy etc. There is also a contributing chapter from leading medical instrumentation company on their view of optical imaging techniques in clinical laparoscopic surgery. The UN proclaimed 2015 as the International Year of Light and Light-based Technologies, emphasizing achievements in the optical sciences and their importance to human beings. In this context, this book focusses on the recent advances in biophotonics techniques primarily focused towards translational medicine contributed by thought leaders who have made cutting edge developments in various photonics techniques.

Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications will enable readers to gain an insight into this extremely important area of electronic materials activity. Specialists in the field will benefit from its wide-ranging and topical coverage of the subject. At the same time, each of the chapters covers the basic principles associated with the topic concerned and includes references for further study and so will be suitable for advanced graduate courses. Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications is organised in three main sections. The first covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the exciting new area of low dimensional solids and the novel concepts which arise from them. The second section discusses the properties of the materials which make them useful in optical, transport, doping, defects, diffusion and structural applications, and the interfacial and surface effects. In addition, there is a separate chapter on dilute magnetic semiconductors and their unique and fascinating properties. Finally, there is a devices section which encompasses the major fields of infrared detection and emission, by several device types, and the expanding areas of solar cell production and room temperature detection of X-rays and gamma-rays.

This book is devoted to logic synthesis and design techniques for asynchronous circuits. It uses the mathematical theory of Petri Nets and asynchronous automata to develop practical algorithms implemented in a public domain CAD tool. Asynchronous circuits have so far been designed mostly by hand, and are thus much less common than their synchronous counterparts, which have enjoyed a high level of design automation since the mid-1970s. Asynchronous circuits, on the other hand, can be very useful to tackle clock distribution, modularity, power dissipation and electro-magnetic interference in digital integrated circuits. This book provides the foundation needed for CAD-assisted design of such circuits, and can also be used as the basis for a graduate course on logic design.