Liquid Crystal Display Drivers deals with Liquid Crystal Displays from the electronic engineering point of view and is the first expressively focused on their driving circuits. After introducing the physical-chemical properties of the LC substances, their evolution and application to LCDs, the book converges to the examination and in-depth explanation of those reliable techniques, architectures, and design solutions amenable to efficiently design drivers for passive-matrix and active-matrix LCDs, both for small size and large size panels. Practical approaches regularly adopted for mass production but also emerging ones are discussed. The topics treated have in many cases general validity and found application also in alternative display technologies (OLEDs, Electrophoretic Displays, etc.).

The purpose of this book is to review the current state of this quickly developing field. Up until now, there has been no concise review available of the rather diverse aspects of this field. This book gives a basic introduction to the concepts behind Bloch oscillations. It describes how the physics of high field transport has been investigated through a broad range of experimental techniques such as interband and intraband optical spectroscopy and transport experiments. Possible applications and further trends are also discussed.

This thesis examines a novel class of flexible electronic material with great potential for use in the construction of stretchable amplifiers and memory elements. Most remarkably the composite material produces spontaneous oscillations that increase in frequency when pressure is applied to it. In this way, the material mimics the excitatory response of pressure-sensing neurons in the human skin. The composites, formed of silicone and graphitic nanoparticles, were prepared in several allotropic forms and functionalized with naphthalene diimide molecules. A systematic study is presented of the negative differential resistance (NDR) region of the current-voltage curves, which is responsible for the material's active properties. This study was conducted as a function of temperature, graphite filling fraction, scaling to reveal the break-up of the samples into electric field domains at the onset of the NDR region, and an electric-field induced metal-insulator transition in graphite nanoparticles. The effect of molecular functionalization on the miscibility threshold and the current-voltage curves is demonstrated. Room-temperature and low-temperature measurements were performed on these composite films under strains using a remote-controlled, custom-made step motor bench.

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

This book presents the state of the art in surface wrinkling, including current and future potential applications in biomedicine, tissue engineering, drug delivery, microfluidic devices, and other promising areas. Their use as templates, flexible electronics, and supports with controlled wettability and/or adhesion for biorelated applications demonstrate how the unique characteristics of wrinkled interfaces play a distinguishing and remarkable role. The fabrication approaches employed to induce wrinkle formation and the potential to fine-tune the amplitude and period of the wrinkles, their functionality, and their final morphology are thoroughly described. An overview of the main applications in which these buckled interfaces have already been employed or may have an impact in the near future is included. Presents a detailed description of the physical phenomena and strategies occurring at polymer surfaces to produce wrinkled surface patterns; Examines the different methodologies to produce morphology-controlled wrinkled surface patterns by means of physical and chemical treatment methods; Provides clear information on current and potential applications in flexible electronics and biomaterials, which are leading the use of these materials.

This book offers a new approach to the long-standing problem of high-Tc copper-oxide superconductors. It has been demonstrated that starting from a strongly correlated Hamiltonian, even within the mean-field regime, the "competing orders" revealed by experiments can be achieved using numerical calculations. In the introduction, readers will find a brief review of the high-Tc problem and the unique challenges it poses, as well as a comparatively simple numerical approach, the renormalized mean-field theory (RMFT), which provides rich results detailed in the following chapters. With an additional phase picked up by the original Hamiltonian, some behaviors of interactive fermions under an external magnetic field, which have since been experimentally observed using cold atom techniques, are also highlighted.

This book deals with optical properties of semiconductors at extremely short (pico- and femtosecond) time scales. The contributions, by an international roster of researchers, cover current research on a wide array of topics.Topics covered include: 1. Coherent Dynamics of Photoexcited Semiconductor Superlattices with Applied Homogeneous Electric Fields (Koch,Meier,Thomas) 2. Ultrafast non-equilibrium dynamics of intersubband excitations in quasi two dimensional semiconductors (Elsaesser,Woerner MPI Berlin) 3. Bloch-Oscillations in Semiconductors: Principles and Applications (Leo, TU Dresden) 4. Electron-velocity overshoot, electron ballistic transport and nonequilibrium phonon dynamics in nanostructure semiconductors (Tsen, Arizona State) 5. Coherent Control of Photocurrents in Semiconductors (Van Driel,Sipe U Toronto ) 6. Ensemble Monte Carlo Simulations of Ultrafast Phenomena in Semiconductors (Ferry & Goodnick, Arizona State) 7. Theory of Coherent Phonon Oscillations in Bulk GaAs (Stanton & Kuznetsov, U Florida) 8.Coherent Spectroscopy on Quantum Wires (Forchel, Bayer, & Bacher, U Wuerzburg) 9. The Vectorial Dynamics of Coherent Emission from Excitions (Smirl, U Iowa)

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

This book presents synthesis techniques for the preparation of low-dimensional nanomaterials including 0D (quantum dots), 1D (nanowires, nanotubes) and 2D (thin films, few layers), as well as their potential applications in nanoelectronic systems. It focuses on the size effects involved in the transition from bulk materials to nanomaterials; the electronic properties of nanoscale devices; and different classes of nanomaterials from microelectronics to nanoelectronics, to molecular electronics. Furthermore, it demonstrates the structural stability, physical, chemical, magnetic, optical, electrical, thermal, electronic and mechanical properties of the nanomaterials. Subsequent chapters address their characterization, fabrication techniques from lab-scale to mass production, and functionality. In turn, the book considers the environmental impact of nanotechnology and novel applications in the mechanical industries, energy harvesting, clean energy, manufacturing materials, electronics, transistors, health and medical therapy. In closing, it addresses the combination of biological systems with nanoelectronics and highlights examples of nanoelectronic-cell interfaces and other advanced medical applications. The book answers the following questions: * What is different at the nanoscale? * What is new about nanoscience? * What are nanomaterials (NMs)? * What are the fundamental issues in nanomaterials? * Where are nanomaterials found? * What nanomaterials exist in nature? * What is the importance of NMs in our lives? * Why so much interest in nanomaterials? * What is at nanoscale in nanomaterials? * What is graphene? * Are pure low-dimensional systems interesting and worth pursuing? * Are nanotechnology products currently available? * What are sensors? * How can Artificial Intelligence (AI) and nanotechnology work together? * What are the recent advances in nanoelectronic materials? * What are the latest applications of NMs?

This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8+ (Bi2212) and single-layer FeSe film grown on SrTiO3 (STO) substrate by means of angle-resolved photoemission spectroscopy (ARPES). It provides the first electronic evidence for the origin of the anomalous high-temperature superconductivity in single-layer FeSe grown on SrTiO3 substrate. Two coexisted sharp-mode couplings have been identified in superconducting Bi2212. The first ARPES study on single-layer FeSe/STO films has provided key insights into the electronic origin of superconductivity in this system. A phase diagram and electronic indication of high Tc and insulator to superconductor crossover have been established in the single-layer FeSe/STO films. Readers will find essential information on the techniques used and interesting physical phenomena observed by ARPES.

The principal aim of this NATO Advanced Study Institute (ASI) "Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology" was to present a contemporary overview of the field of nanostructured and advanced electronic materials. Nanotechnology is an emerging scientific field receiving significant worldwide attention. On a nanometer scale, materials or structures may possess new and unique physical properties. Some of these are now known to the scientific community, but there may well be many properties not yet known to us, rendering it as a fascinating area of research and a suitable subject for a NATO ASI. Yet another aspect of the field is the possibility for creating meta-stable phases with unconventional properties and the ultra-miniaturization of current devices, sensors, and machines. Such nanotechnological and related advanced materials have an extremely wide range of potential applications, viz. nanoscale electronics, sensors, optoelectronics, photonics, nano-biological systems, na- medicine, energy storage systems, etc. This is a wide-ranging subject area and therefore requires the formation of multi-disciplinary teams of physicists, chemists, materials scientists, engineers, molecular biologists, pharmacologists, and others to work together on the synthesis and processing of materials and structures, the understanding of their physical properties, the design and fabrication of devices, etc. Hence, in formulating our ASI, we adopted an int- disciplinary approach, bringing together recognised experts in the various fields while retaining a level of treatment accessible to those active in specific individual areas of research and development.

Thisvolumereportsthemajorpartofthescientificcontributionsofthefirstinternational workshoponSuperconductingNano-ElectronicsDevices(SNED)heldinNapoli,Italy,at theendofMay2001. Theaimoftheworkshopwastofocusonrecentexperimentalandtheoreticalresultsin thefieldofsuperconductingnano-electronicsdevices. Itcombinedphysicswithpresent andfuturetechnologicalapplications:bothfundamentalandappliedaspectswerecovered. SpecialemphasiswasgiventoquantumcoherenceandcomputationusingsmallJosephson junctions,noiseinultrasensitivenanodevicesandpossibilitiesofmakinguseofsupercon- ductivityinvariouson-chipdevices. Withtheseattributesandwithrecognizedinvited speakersintheirspecialtiestheworkshopmanagedtobringtogetheracollectionof scientistsfromnearbybutdistinctresearchcommunities. Thiswaytheatmosphereofthe workshopbecameveryopenanddiscussionswerelivelybothduringandoutsidethe sessions. Thisfreshdiscussionhopefullygaveeveryparticipantalotofnewideasfor furtherworkbackintheirhomeinstitutes. OneofthecentraltopicsintheworkshopwastheuseofdifferentJosephsonjunction configurationsasimplementationsofquantumbits. Atthetimeoftheworkshopwewere justwaitingforthesecondwaveofbreakthroughsinthisfield:theresultsemergingfrom theparticipatinglaboratoriesoftheworkshopjustatthetimeofthewritingofthispreface perhapsalsoprovetheusefulnessofourworkshop. Anotherfocuswasonvarioustopicsrelatedtoultrasensativedetectors. Theybring quantumlimitationstoapplications,andmanydeviceconceptsareresultsofunderstanding fundamentalandexcitingphenomenainsuperconductivity. Noiseandon-chipcooling wereexplicitlydiscussedinthedetectorsessionsaswell. ThechoiceofthelocationrecognizestheroleandthetraditionsofNapoliespeciallyin thefieldofmacroscopicquantumcoherence,oneofthemainissuesoftheworkshop. It furtherguaranteedtheparticipantsastimulatingatmosphereatthemeeting. Inconclusion,wewishtothanktheIstitutoItalianopergliStudiFilosofici,theIstituto diCiberneticadelConsiglioNazionaledelleRicerche,theUniversityofJyviiskylii,the IstitutoNazionalediFisicaNucleare,theIstitutoNazionalediFisicadellaMateria,the DipartimentoScienzeFisiche,andtheRettoratodell'UniversitadiNapoli"FedericoII" fortheirsupport. ThanksarealsoduetoAirLiquide,CRY,Nanoway,OxfordInstruments, andRaith. ThisinitiativeisintheframeoftheinternationalactivityofMQC2Association on"MacroscopicQuantumCoherenceandComputing. "WeareindebtedtoC. Granata v vi PREFACE and V. Coratoforscientificassistance,andtoF. Caiazzo,E. DeGrazia,andA. M. Mazzarellafortheirvaluableassistanceinallthetasksconnectedtotheorganizationofthe Workshop. WearealsogratefultoL. Longobardi,A. Monaco,S. Piscitelli,andS. Rombetto forhintsandhelpduringtheWorkshop. ThanksareduetoL. DeFelice,S. Luongo,and V. Sindonifortheorganizationofthesocialevent. J. Pekola B. Ruggiero P. Silvestrini CONTENTS QuantumNondemolitionMeasurementsofaQubit . D. V. Averin BayesianQuantumMeasurementofaSingle-Cooper-PairQubit 11 A. Korotkov lIfNoiseinJosephsonQubits 15 E. Paladino, L. Faoro,G. Falci,and R. Fazio SwitchingCurrentsandQuasi-ParticlePoisoningintheSuperconducting SingleElectronTransistor 25 P. Agren,J. Walter,V. Sch611mann,andD. B. Haviland JosephsonSystemsforQuantumCoherenceExperiments 33 V. Corato,C. Granata, L. Longobardi,M. Russo,B. Ruggiero, andP. Silvestrini SolidStateAnalogueofDoubleSlitInterferometer...43 K. Yu. Arutyunov, T. T. Hongisto,andJ. P. Pekola NoiseandMicrowavePropertiesofSET-Transistors...53 M. Ejrnres,M. T. Savolainen,andJ. Mygind UseofSmallThnnelJunctionsOperatingatT=0. 3K 63 R. Leoni,M. G. Castellano,F. Chiarello,andG. Torrioli AHystericSingleCooperPairTransistorforSingleShotReadingof 73 aCharge-Qubit A. Cottet,D. Vion,P. Joyez,D. Esteve,andM. H. Devoret SingleCooperPairElectrometerBasedonaRadio-Frequency-SQUID Scheme 87 A. B. Zorin vii viii CONTENTS PossibilityofSingle-ElectronDevicesandSuperconductingCoherence 97 Yu. A. Pashkin, Y. Nakamura,T. Yamamoto,andJ. S. Tsai Frequency-LockedCurrentofCooperPairsinSuperconductingSingle ElectronTransistorwithOhmicResistor...105 S. V. Lotkhov,S. A. Bogoslovsky, A. B. Zorin,andJ. Niemeyer SetupforExperimentsontheSupercurrent-PhaseRelationinBloch Transistors-StatusandPossibleApplications 115 M. Gotz, V. V. Khanin, A. B. Zorin,E. Il'ichev,S. A. Bogoslovsky, andJ. Niemeyer Single-ElectronTransistorsintheRegimeofHighConductance...123 C. Wallisser,B;Limblach,P. yomStein,and R. Schiifer SuperconductingTransistor-EdgeSensorsforTime&EnergyResolved Single-PhotonCountersandforDarkMatterSearches 133 B. Cabrera OptimizationoftheHot-ElectronBolometerandaCascadeQuasiparticle 145 L. Kuzrnin NoiseinRefrigeratingTunnelJunctionsandinMicrobolometers...153 D. V. Anghel NonequilibriumQuasiparticlesandElectronCoolingbyNormalMetal- SuperconductorTunnelJunctions...165 D. Golubevand A. Vasenko MesoscopicJosephsonJunctionsCoupledtoWeakCoherentFields: AnExampleofReciprocalDetection 175 R. Miglioreand A. Messina DynamicsofSuperconductingInterferometersContainingPi-Junctions 183 V. K. Kornev, I. I. Soloviev, I. V. Borisenko,P. B. Mozhaev, andG. A.

The motion of electrons in superconductors seems to exceed our imagination based on daily experience with Newtonian mechanics. This book shows that the classical concepts, such as the balance of forces acting on electrons, are useful for understanding superconductivity. The electrostatic field plays a natural part in this balance as it mediates forces between electrons at long distances.

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

When basic researchers started working on semiconductors during the late nineteen thirties and on integrated circuits at the end of the nineteen fifties, they did not know that their work would change the lives of future generations. Very few people at that time recognized the significance of, perhaps, the most important invention of the century. Historians have assigned the invention of integrated circuits to Jack Kilby and Robert Noyce. In this book, the author argues that the group of inventors was much larger. This richly illustrated account is a personal recollection of the development of integrated circuits and personalities a" such as Russell Ohl, Karl Lark-Horovitz, William Shockley, Carl Frosch, Lincoln Derick, Calvin Fuller, Kurt Lehovec. Jean Hoerni, Sheldon Roberts, Jay Last, Isy Haas, Bob Norman, Dave Allison, Jim Nall, Tom Longo, Bob Widlar, Dave Talbert, Frank Wanlass, and Federico Faggin. Here is the first comprehensive behind-the-scenes account of the history of the integrated circuit, the microelectronics industry, and the people closely involved in the development of the transistor and the integrated circuit.

"Your book is going to make a major contribution to semiconductor history. You and I agree that, while the world loves a hero, semiconductor progress depended on the efforts and ideas of a large number of people, and that moving forward depended on contributors going back a few decades in some cases. Also, as is the case with most inventions, a number of people with access to the same pool of common knowledge were working independently at the same time to put it all together and to make the necessary extensions to the existing technology and whorealized that the time was right for society to accept the new concepts. Your diligent research points all of this out."

Dr. Jay Last, Former Shockley Laboratories employee, co-founder of Fairchild Semiconductor, co-founder of Amelco Semiconductor, and manager of Fairchilda (TM)s group which designed and produced the world first planar integrated circuit.

"Bo Lojek presents a remarkable document of the most important and significant technical development of our times. He describes in astounding detail the engineering efforts of modern microelectronics. He concentrates on the history of silicon semiconductor devices. Californiaa (TM)s "Silicon Valley" is the center of attention, together with its ancestry of transistor invention at Bell Laboratories. He has collected a wealth of illustrative documentation, gives incisive insight into the lives of the main actors and shows the often tragic fates of the engineers and businessmen. He does not hide his firm belief in the individual engineer and warns of the retarding influence of present-day political correctness."

Dr. Hans J. Queisser, Former Shockley Semiconductor scientist and retired director of the Max-Planck-Institute for Solids, Stuttgart, Germany.

"The technical history of the semiconductor history rivals the 1849 California Gold Rush as a period filled with excitement and opportunity. Although I cannot first hand validate its complete accuracy, I enthusiastically encourage you to read the collected facts, opinions, and views of an author who was actually part of this amazing period, viewing it as a successful practicing Engineer during this "gold rush" - like hey-day of the semiconductor industry.

For educators andtechnologists you will find this collection of data, facts, and opinions, collected and observed first hand by the author, fascinating! It is a tough read for others due to the writing experience of the author and its technical focus."

John F. Gifford, Former Fairchild Semiconductor Marketing Manager of Linear Integrated Circuits, co-founder of Advanced Micro Devices, and President and Chief Executive Officer of Maxim Integrated Products.

"Bo Lojek gets it right! There are few industries as dynamic as semiconductors and the history of the semiconductor industry is still unfolding. This book gives the history of people, places and technology that resulted in todaya (TM)s semiconductor industry. I particularly like the inclusion of many technical pieces in the book."

Robert Dobkin, Former National Semiconductor Director of Advanced Circuit Development and co-founder and Chief Technical Officer of Linear Technology Corporation.

The application of quantitative reliability evaluation in electric power sys tems has now evolved to the point at which most utilities use these techniques in one or more areas of their planning, design, and operation. Most of the techniques in use are based on analytical models and resulting analytical evaluation procedures. Improvements in and availability of high-speed digi tal computers have created the opportunity to analyze many of these prob lems using stochastic simulation methods and over the last decade there has been increased interest in and use made of Monte Carlo simulation in quantitative power system reliability assessment. Monte Carlo simulation is not a new concept and recorded applications have existed for at least 50 yr. However, localized high-speed computers with large-capacity storage have made Monte Carlo simulation an available and sometimes preferable option for many power system reliability applications. Monte Carlo simulation is also an integral part of a modern undergrad uate or graduate course on reliability evaluation of general engineering systems or specialized areas such as electric power systems. It is hoped that this textbook will help formalize the many existing applications of Monte Carlo simulation and assist in their integration in teaching programs. This book presents the basic concepts associated with Monte Carlo simulation."

BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.

The major thrust of this book is the realisation of an all optical computer. To that end it discusses optoelectronic devices and applications, transmission systems, integrated optoelectronic systems and, of course, all optical computers. The chapters on heterostructure light emitting devices' quantum well carrier transport optoelectronic devices' present the most recent advances in device physics, together with modern devices and their applications. The chapter on microcavity lasers' is essential to the discussion of present and future developments in solid-state laser physics and technology and puts into perspective the present state of research into and the technology of optoelectronic devices, within the context of their use in advanced systems. A significant part of the book deals with problems of propagation in quantum structures. soliton-based switching, gating and transmission systems' presents the basics of controlling the propagation of photons in solids and the use of this control in devices. The chapters on optoelectronic processing using smart pixels' and all optical computers' are preceded by introductory material in fundamentals of quantum structures for optoelectronic devices and systems' and linear and nonlinear absorption and reflection in quantum well structures'. It is clear that new architectures will be necessary if we are to fully utilise the potentiality of electrooptic devices in computing, but even current architectures and structures demonstrate the feasibility of the all optical computer: one that is possible today.

Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.

Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines."

This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.

In this book, the author theoretically studies two aspects of topological states. First, novel states arising from hybridizing surface states of topological insulators are theoretically introduced. As a remarkable example, the author shows the existence of gapless interface states at the interface between two different topological insulators, which belong to the same topological phase. While such interface states are usually gapped due to hybridization, the author proves that the interface states are in fact gapless when the two topological insulators have opposite chiralities. This is the first time that gapless topological novel interface states protected by mirror symmetry have been proposed. Second, the author studies the Weyl semimetal phase in thin topological insulators subjected to a magnetic field. This Weyl semimetal phase possesses edge states showing abnormal dispersion, which is not observed without mirror symmetry. The author explains that the edge states gain a finite velocity by a particular form of inversion symmetry breaking, which makes it possible to observe the phenomenon by means of electric conductivity.

An increasing number of system designers are using ASIP 's rather than ASIC 's to implement their system solutions. Building ASIPs: The Mescal Methodology gives a simple but comprehensive methodology for the design of these application-specific instruction processors (ASIPs).

The key elements of this methodology are:

Judiciously using benchmarking

Inclusively identifying the architectural space

Efficiently describing and evaluating the ASIPs

Comprehensively exploring the design space

Successfully deploying the ASIP

This book includes demonstrations of applications of the methodologies using the Tipi research framework as well as state-of-the-art commercial toolsets from CoWare and Tensilica.

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.