The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

Advances in the synthesis of new materials with often complex, nano-scaled structures require increasingly sophisticated experimental techniques that can probe the electronic states, the atomic magnetic moments and the magnetic microstructures responsible for the properties of these materials.

At the same time, progress in synchrotron radiation techniques has ensured that these light sources remain a key tool of investigation, e.g. synchrotron radiation sources of the third generation are able to support magnetic imaging on a sub-micrometer scale.

With the Sixth Mittelwihr School on Magnetism and Synchrotron Radiation the tradition of teaching the state-of-the-art on modern research developments continues and is expressed through the present set of extensive lectures provided in this volume. While primarily aimed at postgraduate students and newcomers to the field, this volume will also benefit researchers and lecturers actively working in the field.

examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs."

Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical and their technological aspects.
Starting with Volume 30, the title of the series, Thin Films, is being changed to Thin Films and Nanostructures. We feel that this new title
reflects more accurately the rapidly growing inclusion of research and
development efforts on nanostructures, especially in relation to novel
solid-state device formats

This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.

Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. "Handbook of Transparent Conductors" presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.

This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.

Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction."

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

System-Level Design Techniques for Energy-Efficient Embedded Systems addresses the development and validation of co-synthesis techniques that allow an effective design of embedded systems with low energy dissipation. The book provides an overview of a system-level co-design flow, illustrating through examples how system performance is influenced at various steps of the flow including allocation, mapping, and scheduling. The book places special emphasis upon system-level co-synthesis techniques for architectures that contain voltage scalable processors, which can dynamically trade off between computational performance and power consumption. Throughout the book, the introduced co-synthesis techniques, which target both single-mode systems and emerging multi-mode applications, are applied to numerous benchmarks and real-life examples including a realistic smart phone.

The ELFNET Book on Failure Mechanisms, Testing Methods, and Quality Issues of Lead-Free Solder Interconnects is the work of the European network ELFNET which was founded by the European Commission in the 6th Framework Programme. It brings together contributions from the leading European experts in lead-free soldering. The limited validity of testing methods originating from tin-lead solder was a major point of concern in ELFNET members' discussions. As a result, the network's reliability group decided to bring together the material properties of lead-free solders, as well as the basics of material science, and to discuss their influence on the procedures for accelerated testing. This has led to a matrix of failure mechanisms and their activation and, as a result, to a comprehensive coverage of the scientific background and its applications in reliability testing of lead-free solder joints. The ELFNET Book on Failure Mechanisms, Testing Methods, and Quality Issues of Lead-Free Solder Interconnects is written for scientists, engineers and researchers involved with lead-free electronics.

The present book provides recent developments in various in vivo imaging and sensing techniques such as photo acoustics (PA) imaging and microscopy, ultrasound-PA combined modalities, optical coherence tomography (OCT) and micro OCT, Raman and surface enhanced Raman scattering (SERS), Fluorescence lifetime imaging (FLI) techniques and nanoparticle enabled endoscopy etc. There is also a contributing chapter from leading medical instrumentation company on their view of optical imaging techniques in clinical laparoscopic surgery. The UN proclaimed 2015 as the International Year of Light and Light-based Technologies, emphasizing achievements in the optical sciences and their importance to human beings. In this context, this book focusses on the recent advances in biophotonics techniques primarily focused towards translational medicine contributed by thought leaders who have made cutting edge developments in various photonics techniques.

The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

This book addresses the design of compliant mechanisms, presenting readers with a good understanding of both the solid mechanics of flexible elements and their configuration design, based on a mechanism-equivalent approach in the framework of screw theory. The book begins with the theoretical background of screw theory, and systematically addresses both the compliance characteristics of flexible elements and their configuration design. The book then covers a broad range of compliant parallel mechanism design topics, from stiffness to constraint decomposition, from conceptual design to dimensional design, and from analysis to synthesis, as well as the large deformation problem; this is followed by both simulations and physical experiments, offering readers a solid foundation and useful tools. Given its scope and the results it presents, the book will certainly benefit and inform future research on the topic. It offers a valuable asset for researchers, developers, engineers and graduate students with an interest in compliant mechanisms, robotics and screw theory.

This book is devoted to logic synthesis and design techniques for asynchronous circuits. It uses the mathematical theory of Petri Nets and asynchronous automata to develop practical algorithms implemented in a public domain CAD tool. Asynchronous circuits have so far been designed mostly by hand, and are thus much less common than their synchronous counterparts, which have enjoyed a high level of design automation since the mid-1970s. Asynchronous circuits, on the other hand, can be very useful to tackle clock distribution, modularity, power dissipation and electro-magnetic interference in digital integrated circuits. This book provides the foundation needed for CAD-assisted design of such circuits, and can also be used as the basis for a graduate course on logic design.

This textbook, based on the authors' class-tested material, is accessible to students at the advanced undergraduate and graduate level in physics and engineering. While its primary function is didactic, this book's comprehensive choice of topics and its clear and authoritative synthesis of ideas make it a useful reference for researchers, device engineers, and course instructors who wish to consolidate their knowledge of this field. The book takes the semi-classical approach where light is treated as a wave in accordance with the classical Maxwell equations, while matter is governed by quantum theory. It begins by introducing the postulates and mathematical framework of quantum theory, followed by the formalism of the density matrix which allows the transition from microscopic (quantum) quantities to macroscopic (classical) ones. Consequently, the equations describing the reaction of matter to the electromagnetic field in the form of polarization, magnetization, and current are derived. These equations (together with the Maxwell equations) form the complete system of equations sufficient to model a wide class of problems surrounding linear and nonlinear interactions of electromagnetic fields with matter. The nonlinear character of the governing equations determines parameters of the steady-state mode of the quantum generator and is also demonstrated in harmonic generation via propagation of laser radiation in various media. The touchstone description of magnetic phenomena will be of interest to scientists who deal with applications of magneto-resonance phenomena in biology and medicine. Other advanced topics covered include electric dipole transitions, magnetic dipole transitions, plasma transitions, and the devices that can be based on these and other electro-optical and nonlinear-optical systems. This textbook features numerous exercises, some of which are investigatory and some of which require computational solutions.

Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications will enable readers to gain an insight into this extremely important area of electronic materials activity. Specialists in the field will benefit from its wide-ranging and topical coverage of the subject. At the same time, each of the chapters covers the basic principles associated with the topic concerned and includes references for further study and so will be suitable for advanced graduate courses. Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications is organised in three main sections. The first covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the exciting new area of low dimensional solids and the novel concepts which arise from them. The second section discusses the properties of the materials which make them useful in optical, transport, doping, defects, diffusion and structural applications, and the interfacial and surface effects. In addition, there is a separate chapter on dilute magnetic semiconductors and their unique and fascinating properties. Finally, there is a devices section which encompasses the major fields of infrared detection and emission, by several device types, and the expanding areas of solar cell production and room temperature detection of X-rays and gamma-rays.

Microcantilevers for Atomic Force Microscope Data Storage describes a research collaboration between IBM Almaden and Stanford University in which a new mass data storage technology was evaluated. This technology is based on the use of heated cantilevers to form submicron indentations on a polycarbonate surface, and piezoresistive cantilevers to read those indentations. Microcantilevers for Atomic Force Microscope Data Storage describes how silicon micromachined cantilevers can be used for high-density topographic data storage on a simple substrate such as polycarbonate. The cantilevers can be made to incorporate resistive heaters (for thermal writing) or piezoresistive deflection sensors (for data readback). The primary audience for Microcantilevers for Atomic Force Microscope Data Storage is industrial and academic workers in the microelectromechanical systems (MEMS) area. It will also be of interest to researchers in the data storage industry who are investigating future storage technologies.

For emerging energy saving technologies superconducting materials with superior performance are needed. Such materials can be developed by manipulating the "elementary building blocks" through nanostructuring. For superconductivity the "elementary blocks" are Cooper pair and fluxon (vortex). This book presents new ways how to modify superconductivity and vortex matter through nanostructuring and the use of nanoscale magnetic templates. The basic nano-effects, vortex and vortex-antivortex patterns, vortex dynamics, Josephson phenomena, critical currents, and interplay between superconductivity and ferromagnetism at the nanoscale are discussed. Potential applications of nanostructured superconductors are also presented in the book.

This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures - their optical and electrical properties - are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure-property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

In this thesis, the author has developed a high-resolution spin-resolved photoemission spectrometer that achieves the world-best energy resolution of 8 meV. The author has designed a new, highly efficient mini Mott detector that has a large electron acceptance angle and an atomically flat gold target to enhance the efficiency of detecting scattered electrons.

The author measured the electron and spin structure of Bi thin film grown on a Si(111) surface to study the Rashba effect. Unlike the conventional Rashba splitting, an asymmetric in-plane spin polarization and a tremendous out-of-plane spin component were observed. Moreover, the author found that the spin polarization of Rashba surface states is reduced by decreasing the film thickness, which indicates the considerable interaction of Rashba spin-split states between the surface and Bi/Si interface.

For courses in 8051 Microcontrollers and Embedded Systems The 8051 Microprocessor: A Systems Approach emphasizes the programming and interfacing of the 8051. Using a systematic, step-by-step approach, the text covers various aspects of 8051, including C and Assembly language programming and interfacing. Throughout each chapter, examples, sample programs, and sectional reviews clarify the concepts and offer students an opportunity to learn by doing.

Dear Readers, Since the ground-breaking, Nobel-prize crowned work of Heeger, MacDiarmid, and Shirakawa on molecularly doped polymers and polymers with an alternating bonding structure at the end of the 1970s, the academic and industrial research on hydrocarbon-based semiconducting materials and devices has made encouraging progress. The strengths of semiconducting polymers are currently mainly unfolding in cheap and easily assembled thin ?lm transistors, light emitting diodes, and organic solar cells. The use of so-called "plastic chips" ranges from lightweight, portable devices over large-area applications to gadgets demanding a degree of mechanical ?exibility, which would overstress conventionaldevices based on inorganic,perfect crystals. The ?eld of organic electronics has evolved quite dynamically during the last few years; thus consumer electronics based on molecular semiconductors has gained suf?cient market attractiveness to be launched by the major manufacturers in the recent past. Nonetheless, the numerous challenges related to organic device physics and the physics of ordered and disordered molecular solids are still the subjects of a cont- uing lively debate. The future of organic microelectronics will unavoidably lead to new devi- physical insights and hence to novel compounds and device architectures of - hanced complexity. Thus, the early evolution of predictive models and precise, computationally effective simulation tools for computer-aided analysis and design of promising device prototypes will be of crucial importance.

The first edition of this book provided an introduction to the many static and dynamic features of magnetic flux structures in what are now called classical or low-temperature superconductors. It went out of print not long after the discovery of high-temperature superconductors in 1986 by J.G. Bednorz and K.A. Miiller, a discovery which resulted worldwide in an explosive growth of research and development in the field of superconductivity. Because of this upsurge of activities, a strong demand for this book clearly continued. Since the contents of the fourteen chapters of the first edition are still valid and continue to represent a useful introduction into the various subjects, it was felt that a reprinting of these chapters in this second edition would be highly attractive. In this way, the reader is also able to trace the earlier scienti fic developments, themselves constituting important ideas sometimes forgot ten by the new community dealing with high-temperature superconductivity. However, because of the exciting and important recent progress in the field of high-temperature superconductivity, an extensive chapter has been added in this second edition. It provides a summary of the new developments and a discussion of the highlights. Here keywords such as vortex matter, vortex imaging, and half-integer magnetic flux quanta describe surprising new issues."