This book presents an innovative concept for the realization of sensors based on a planar metamaterial microwave array and shows their application in biomedical analysis and treatment. The sensors are able to transduce the dielectric properties of materials in their direct vicinity into an electric signal. The specific array organization permits a simultaneous analysis of several materials using a single readout signal or a relative characterization of one material where information about its spatial distribution can be extracted. Two applications of the designed sensors are described here: the first is a cytological screening using micro fluidic technology, which shows that the sensors may be integrated into lab-on-chip technologies; the second application regards the use of the sensor in both the analysis and treatment of organic tissues. The developed sensor is able not only to screen the tissues for abnormalities, but also, by changing the applied signals, to perform thermal ablation and treat the abnormalities in a highly focused way. Thus, the research described in this book represents a considerable advancement in the field of biomedical microwave sensing.

This book describes innovative design solutions for radio-frequency identification (RFID) tags and antennas. Focusing mainly on passive ultra-high-frequency (UHF)-RFID tag antennas, it examines novel approaches based on the use of metamaterial-inspired resonators and other resonant structures as radiating elements. It also offers an exhaustive analysis of the radiation properties of several metamaterial-inspired resonators such as the split ring resonator (SRR) and related structures. Further, it discusses in detail an innovative technology for the RFID tagging of optical discs, which has demonstrated a significant improvement over the state of the art and resulted in a patent. By covering the entire research cycle of theory, design/simulation and fabrication/evaluation of RFID tags and antennas, while also reporting on cutting-edge technologies, the book provides graduate students, researchers and practitioners alike with a comprehensive and timely overview of RFID systems, and a closer look at several radiating structures.

This book offers a new approach to the long-standing problem of high-Tc copper-oxide superconductors. It has been demonstrated that starting from a strongly correlated Hamiltonian, even within the mean-field regime, the "competing orders" revealed by experiments can be achieved using numerical calculations. In the introduction, readers will find a brief review of the high-Tc problem and the unique challenges it poses, as well as a comparatively simple numerical approach, the renormalized mean-field theory (RMFT), which provides rich results detailed in the following chapters. With an additional phase picked up by the original Hamiltonian, some behaviors of interactive fermions under an external magnetic field, which have since been experimentally observed using cold atom techniques, are also highlighted.

The purpose of this book is to review the current state of this quickly developing field. Up until now, there has been no concise review available of the rather diverse aspects of this field. This book gives a basic introduction to the concepts behind Bloch oscillations. It describes how the physics of high field transport has been investigated through a broad range of experimental techniques such as interband and intraband optical spectroscopy and transport experiments. Possible applications and further trends are also discussed.

Liquid Crystal Display Drivers deals with Liquid Crystal Displays from the electronic engineering point of view and is the first expressively focused on their driving circuits. After introducing the physical-chemical properties of the LC substances, their evolution and application to LCDs, the book converges to the examination and in-depth explanation of those reliable techniques, architectures, and design solutions amenable to efficiently design drivers for passive-matrix and active-matrix LCDs, both for small size and large size panels. Practical approaches regularly adopted for mass production but also emerging ones are discussed. The topics treated have in many cases general validity and found application also in alternative display technologies (OLEDs, Electrophoretic Displays, etc.).

This thesis addresses the problem of improving the alignment of carbon nanotubes (CNTs) in transistor applications, taking a unique approach using iptycenes acting as molecular tweezers in combination with a liquid crystal solvent. As part of a project to test the effectiveness of a multi-step method, the so-called Alignment Relay Technique (ART), this work contributed evidence for the selectivity and stability of ART, as well as providing the first proof-of-concept that ART can be used to create CNT field-effect transistors (FETs). The thesis effectively explains and illustrates the chemical synthesis of the tweezers, the concept and actualization of the technique, the various factors observed to influence deposition and selectivity, along with material fabrication using both photolithography and electron beam lithography. This research advances knowledge of transistors and expands the applications of small organic molecules in the field of materials science. Particular highlights of this thesis include: an extensive review of ART, its advantages, and limitations; development of new material chemistry methods for the optimization of semiconducting CNT selectivity; and a comprehensive exploration of fabrication and characterization of CNTFETs for future applications.

To handle many standards and ever increasing bandwidth requirements, large number of filters and switches are used in transceivers of modern wireless communications systems. It makes the cost, performance, form factor, and power consumption of these systems, including cellular phones, critical issues. At present, the fixed frequency filter banks based on Film Bulk Acoustic Resonators (FBAR) are regarded as one of the most promising technologies to address performance -form factor-cost issues. Even though the FBARs improve the overall performances the complexity of these systems remains high. Attempts are being made to exclude some of the filters by bringing the digital signal processing (including channel selection) as close to the antennas as possible. However handling the increased interference levels is unrealistic for low-cost battery operated radios. Replacing fixed frequency filter banks by one tuneable filter is the most desired and widely considered scenario. As an example, development of the software based cognitive radios is largely hindered by the lack of adequate agile components, first of all tuneable filters. In this sense the electrically switchable and tuneable FBARs are the most promising components to address the complex cost-performance issues in agile microwave transceivers, smart wireless sensor networks etc. Tuneable Film Bulk Acoustic Wave Resonators discusses FBAR need, physics, designs, modelling, fabrication and applications. Tuning of the resonant frequency of the FBARs is considered. Switchable and tuneable FBARs based on electric field induced piezoelectric effect in paraelectric phase ferroelectrics are covered. The resonance of these resonators may be electrically switched on and off and tuned without hysteresis. The book is aimed at microwave and sensor specialists in the industry and graduate students. Readers will learn about principles of operation and possibilities of the switchable and tuneable FBARs, and will be given general guidelines for designing, fabrication and applications of these devices.

The information revolution of the twentieth century was brought about by microelectronics based on a simple and common material, silicon. Although silicon will continue to be of central importance in the next century, carbon, silicon's upstairs neighbor in the periodic table, will also be of great impor tance in future technology. Carbon has more flexible bonding and hence has various unique physical, chemical and biological properties. It has two types of bonding, sp3 and sp2, in diamond and graphite, respectively. The existence of the latter, "7r-electron bonding," is responsible for carbon's versatile tal ents. Those materials having extended 7r-electron clouds are called '7r-electron materials'. They include graphite, carbon nanotubes, fullerenes and various carbonaceous materials. They may be called "supercarbon" because of their fabulous multiformity and versatile properties. This volume is a status report on the synthesis, properties and appli cations of 7r-electron materials, representing an updated proceedings of the International Workshop on 7r-Electron Materials held at the Northwestern University, 'Evanston, Illinois, USA, August 13-14,1996. The Workshop was organized jointly by the Japan Science and Technology Corporation (JST) and the Materials Research Center at the Northwestern University (NWU) in order to provide an opportunity for scientists and engineers to meet and dis cuss the latest advances in this field and in commemoration of the Yoshimura 7r-Electron Materials Project, one of Japan's national projects in the JST's ERATO (Exploratory Research for Advanced Technology) program."

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

This thesis examines a novel class of flexible electronic material with great potential for use in the construction of stretchable amplifiers and memory elements. Most remarkably the composite material produces spontaneous oscillations that increase in frequency when pressure is applied to it. In this way, the material mimics the excitatory response of pressure-sensing neurons in the human skin. The composites, formed of silicone and graphitic nanoparticles, were prepared in several allotropic forms and functionalized with naphthalene diimide molecules. A systematic study is presented of the negative differential resistance (NDR) region of the current-voltage curves, which is responsible for the material's active properties. This study was conducted as a function of temperature, graphite filling fraction, scaling to reveal the break-up of the samples into electric field domains at the onset of the NDR region, and an electric-field induced metal-insulator transition in graphite nanoparticles. The effect of molecular functionalization on the miscibility threshold and the current-voltage curves is demonstrated. Room-temperature and low-temperature measurements were performed on these composite films under strains using a remote-controlled, custom-made step motor bench.

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices' performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

This book deals with optical properties of semiconductors at extremely short (pico- and femtosecond) time scales. The contributions, by an international roster of researchers, cover current research on a wide array of topics.Topics covered include: 1. Coherent Dynamics of Photoexcited Semiconductor Superlattices with Applied Homogeneous Electric Fields (Koch,Meier,Thomas) 2. Ultrafast non-equilibrium dynamics of intersubband excitations in quasi two dimensional semiconductors (Elsaesser,Woerner MPI Berlin) 3. Bloch-Oscillations in Semiconductors: Principles and Applications (Leo, TU Dresden) 4. Electron-velocity overshoot, electron ballistic transport and nonequilibrium phonon dynamics in nanostructure semiconductors (Tsen, Arizona State) 5. Coherent Control of Photocurrents in Semiconductors (Van Driel,Sipe U Toronto ) 6. Ensemble Monte Carlo Simulations of Ultrafast Phenomena in Semiconductors (Ferry & Goodnick, Arizona State) 7. Theory of Coherent Phonon Oscillations in Bulk GaAs (Stanton & Kuznetsov, U Florida) 8.Coherent Spectroscopy on Quantum Wires (Forchel, Bayer, & Bacher, U Wuerzburg) 9. The Vectorial Dynamics of Coherent Emission from Excitions (Smirl, U Iowa)

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

This book presents the state of the art in surface wrinkling, including current and future potential applications in biomedicine, tissue engineering, drug delivery, microfluidic devices, and other promising areas. Their use as templates, flexible electronics, and supports with controlled wettability and/or adhesion for biorelated applications demonstrate how the unique characteristics of wrinkled interfaces play a distinguishing and remarkable role. The fabrication approaches employed to induce wrinkle formation and the potential to fine-tune the amplitude and period of the wrinkles, their functionality, and their final morphology are thoroughly described. An overview of the main applications in which these buckled interfaces have already been employed or may have an impact in the near future is included. Presents a detailed description of the physical phenomena and strategies occurring at polymer surfaces to produce wrinkled surface patterns; Examines the different methodologies to produce morphology-controlled wrinkled surface patterns by means of physical and chemical treatment methods; Provides clear information on current and potential applications in flexible electronics and biomaterials, which are leading the use of these materials.

Metamaterials artificially structured materials with engineered electromagnetic properties have enabled unprecedented flexibility in manipulating electromagnetic waves and producing new functionalities. This book details recent advances in the study of optical metamaterials, ranging from fundamental aspects to up-to-date implementations, in one unified treatment. Important recent developments and applications such as superlens and cloaking devices are also treated in detail and made understandable. The planned monograph can serve as a very timely book for both newcomers and advanced researchers in this extremely rapid evolving field."

This book provides comprehensive, state-of-the art coverage of photorefractive organic compounds, a class of material with the ability to change their index of refraction upon illumination. The change is both dynamic and reversible. Dynamic because no external processing is required for the index modulation to be revealed, and reversible because the index change can be modified or suppressed by altering the illumination pattern. These properties make photorefractive materials very attractive candidates for many applications such as image restoration, correlation, beam conjugation, non-destructive testing, data storage, imaging through scattering media, holographic imaging and display. The field of photorefractive organic material is also closely related to organic photovoltaic and light emitting diode (OLED), which makes new discoveries in one field applicable to others.

The principal aim of this NATO Advanced Study Institute (ASI) "Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology" was to present a contemporary overview of the field of nanostructured and advanced electronic materials. Nanotechnology is an emerging scientific field receiving significant worldwide attention. On a nanometer scale, materials or structures may possess new and unique physical properties. Some of these are now known to the scientific community, but there may well be many properties not yet known to us, rendering it as a fascinating area of research and a suitable subject for a NATO ASI. Yet another aspect of the field is the possibility for creating meta-stable phases with unconventional properties and the ultra-miniaturization of current devices, sensors, and machines. Such nanotechnological and related advanced materials have an extremely wide range of potential applications, viz. nanoscale electronics, sensors, optoelectronics, photonics, nano-biological systems, na- medicine, energy storage systems, etc. This is a wide-ranging subject area and therefore requires the formation of multi-disciplinary teams of physicists, chemists, materials scientists, engineers, molecular biologists, pharmacologists, and others to work together on the synthesis and processing of materials and structures, the understanding of their physical properties, the design and fabrication of devices, etc. Hence, in formulating our ASI, we adopted an int- disciplinary approach, bringing together recognised experts in the various fields while retaining a level of treatment accessible to those active in specific individual areas of research and development.

This book presents synthesis techniques for the preparation of low-dimensional nanomaterials including 0D (quantum dots), 1D (nanowires, nanotubes) and 2D (thin films, few layers), as well as their potential applications in nanoelectronic systems. It focuses on the size effects involved in the transition from bulk materials to nanomaterials; the electronic properties of nanoscale devices; and different classes of nanomaterials from microelectronics to nanoelectronics, to molecular electronics. Furthermore, it demonstrates the structural stability, physical, chemical, magnetic, optical, electrical, thermal, electronic and mechanical properties of the nanomaterials. Subsequent chapters address their characterization, fabrication techniques from lab-scale to mass production, and functionality. In turn, the book considers the environmental impact of nanotechnology and novel applications in the mechanical industries, energy harvesting, clean energy, manufacturing materials, electronics, transistors, health and medical therapy. In closing, it addresses the combination of biological systems with nanoelectronics and highlights examples of nanoelectronic-cell interfaces and other advanced medical applications. The book answers the following questions: * What is different at the nanoscale? * What is new about nanoscience? * What are nanomaterials (NMs)? * What are the fundamental issues in nanomaterials? * Where are nanomaterials found? * What nanomaterials exist in nature? * What is the importance of NMs in our lives? * Why so much interest in nanomaterials? * What is at nanoscale in nanomaterials? * What is graphene? * Are pure low-dimensional systems interesting and worth pursuing? * Are nanotechnology products currently available? * What are sensors? * How can Artificial Intelligence (AI) and nanotechnology work together? * What are the recent advances in nanoelectronic materials? * What are the latest applications of NMs?

This edited book designs the Cognitive Computing in Human Cognition to analyze to improve the efficiency of decision making by cognitive intelligence. The book is also intended to attract the audience who work in brain computing, deep learning, transportation, and solar cell energy. Due to this in the recent era, smart methods with human touch called as human cognition is adopted by many researchers in the field of information technology with the Cognitive Computing.

This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8+ (Bi2212) and single-layer FeSe film grown on SrTiO3 (STO) substrate by means of angle-resolved photoemission spectroscopy (ARPES). It provides the first electronic evidence for the origin of the anomalous high-temperature superconductivity in single-layer FeSe grown on SrTiO3 substrate. Two coexisted sharp-mode couplings have been identified in superconducting Bi2212. The first ARPES study on single-layer FeSe/STO films has provided key insights into the electronic origin of superconductivity in this system. A phase diagram and electronic indication of high Tc and insulator to superconductor crossover have been established in the single-layer FeSe/STO films. Readers will find essential information on the techniques used and interesting physical phenomena observed by ARPES.

The motion of electrons in superconductors seems to exceed our imagination based on daily experience with Newtonian mechanics. This book shows that the classical concepts, such as the balance of forces acting on electrons, are useful for understanding superconductivity. The electrostatic field plays a natural part in this balance as it mediates forces between electrons at long distances.

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Thisvolumereportsthemajorpartofthescientificcontributionsofthefirstinternational workshoponSuperconductingNano-ElectronicsDevices(SNED)heldinNapoli,Italy,at theendofMay2001. Theaimoftheworkshopwastofocusonrecentexperimentalandtheoreticalresultsin thefieldofsuperconductingnano-electronicsdevices. Itcombinedphysicswithpresent andfuturetechnologicalapplications:bothfundamentalandappliedaspectswerecovered. SpecialemphasiswasgiventoquantumcoherenceandcomputationusingsmallJosephson junctions,noiseinultrasensitivenanodevicesandpossibilitiesofmakinguseofsupercon- ductivityinvariouson-chipdevices. Withtheseattributesandwithrecognizedinvited speakersintheirspecialtiestheworkshopmanagedtobringtogetheracollectionof scientistsfromnearbybutdistinctresearchcommunities. Thiswaytheatmosphereofthe workshopbecameveryopenanddiscussionswerelivelybothduringandoutsidethe sessions. Thisfreshdiscussionhopefullygaveeveryparticipantalotofnewideasfor furtherworkbackintheirhomeinstitutes. OneofthecentraltopicsintheworkshopwastheuseofdifferentJosephsonjunction configurationsasimplementationsofquantumbits. Atthetimeoftheworkshopwewere justwaitingforthesecondwaveofbreakthroughsinthisfield:theresultsemergingfrom theparticipatinglaboratoriesoftheworkshopjustatthetimeofthewritingofthispreface perhapsalsoprovetheusefulnessofourworkshop. Anotherfocuswasonvarioustopicsrelatedtoultrasensativedetectors. Theybring quantumlimitationstoapplications,andmanydeviceconceptsareresultsofunderstanding fundamentalandexcitingphenomenainsuperconductivity. Noiseandon-chipcooling wereexplicitlydiscussedinthedetectorsessionsaswell. ThechoiceofthelocationrecognizestheroleandthetraditionsofNapoliespeciallyin thefieldofmacroscopicquantumcoherence,oneofthemainissuesoftheworkshop. It furtherguaranteedtheparticipantsastimulatingatmosphereatthemeeting. Inconclusion,wewishtothanktheIstitutoItalianopergliStudiFilosofici,theIstituto diCiberneticadelConsiglioNazionaledelleRicerche,theUniversityofJyviiskylii,the IstitutoNazionalediFisicaNucleare,theIstitutoNazionalediFisicadellaMateria,the DipartimentoScienzeFisiche,andtheRettoratodell'UniversitadiNapoli"FedericoII" fortheirsupport. ThanksarealsoduetoAirLiquide,CRY,Nanoway,OxfordInstruments, andRaith. ThisinitiativeisintheframeoftheinternationalactivityofMQC2Association on"MacroscopicQuantumCoherenceandComputing. "WeareindebtedtoC. Granata v vi PREFACE and V. Coratoforscientificassistance,andtoF. Caiazzo,E. DeGrazia,andA. M. Mazzarellafortheirvaluableassistanceinallthetasksconnectedtotheorganizationofthe Workshop. WearealsogratefultoL. Longobardi,A. Monaco,S. Piscitelli,andS. Rombetto forhintsandhelpduringtheWorkshop. ThanksareduetoL. DeFelice,S. Luongo,and V. Sindonifortheorganizationofthesocialevent. J. Pekola B. Ruggiero P. Silvestrini CONTENTS QuantumNondemolitionMeasurementsofaQubit . D. V. Averin BayesianQuantumMeasurementofaSingle-Cooper-PairQubit 11 A. Korotkov lIfNoiseinJosephsonQubits 15 E. Paladino, L. Faoro,G. Falci,and R. Fazio SwitchingCurrentsandQuasi-ParticlePoisoningintheSuperconducting SingleElectronTransistor 25 P. Agren,J. Walter,V. Sch611mann,andD. B. Haviland JosephsonSystemsforQuantumCoherenceExperiments 33 V. Corato,C. Granata, L. Longobardi,M. Russo,B. Ruggiero, andP. Silvestrini SolidStateAnalogueofDoubleSlitInterferometer...43 K. Yu. Arutyunov, T. T. Hongisto,andJ. P. Pekola NoiseandMicrowavePropertiesofSET-Transistors...53 M. Ejrnres,M. T. Savolainen,andJ. Mygind UseofSmallThnnelJunctionsOperatingatT=0. 3K 63 R. Leoni,M. G. Castellano,F. Chiarello,andG. Torrioli AHystericSingleCooperPairTransistorforSingleShotReadingof 73 aCharge-Qubit A. Cottet,D. Vion,P. Joyez,D. Esteve,andM. H. Devoret SingleCooperPairElectrometerBasedonaRadio-Frequency-SQUID Scheme 87 A. B. Zorin vii viii CONTENTS PossibilityofSingle-ElectronDevicesandSuperconductingCoherence 97 Yu. A. Pashkin, Y. Nakamura,T. Yamamoto,andJ. S. Tsai Frequency-LockedCurrentofCooperPairsinSuperconductingSingle ElectronTransistorwithOhmicResistor...105 S. V. Lotkhov,S. A. Bogoslovsky, A. B. Zorin,andJ. Niemeyer SetupforExperimentsontheSupercurrent-PhaseRelationinBloch Transistors-StatusandPossibleApplications 115 M. Gotz, V. V. Khanin, A. B. Zorin,E. Il'ichev,S. A. Bogoslovsky, andJ. Niemeyer Single-ElectronTransistorsintheRegimeofHighConductance...123 C. Wallisser,B;Limblach,P. yomStein,and R. Schiifer SuperconductingTransistor-EdgeSensorsforTime&EnergyResolved Single-PhotonCountersandforDarkMatterSearches 133 B. Cabrera OptimizationoftheHot-ElectronBolometerandaCascadeQuasiparticle 145 L. Kuzrnin NoiseinRefrigeratingTunnelJunctionsandinMicrobolometers...153 D. V. Anghel NonequilibriumQuasiparticlesandElectronCoolingbyNormalMetal- SuperconductorTunnelJunctions...165 D. Golubevand A. Vasenko MesoscopicJosephsonJunctionsCoupledtoWeakCoherentFields: AnExampleofReciprocalDetection 175 R. Miglioreand A. Messina DynamicsofSuperconductingInterferometersContainingPi-Junctions 183 V. K. Kornev, I. I. Soloviev, I. V. Borisenko,P. B. Mozhaev, andG. A.

BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.