In this book, the author theoretically studies two aspects of topological states. First, novel states arising from hybridizing surface states of topological insulators are theoretically introduced. As a remarkable example, the author shows the existence of gapless interface states at the interface between two different topological insulators, which belong to the same topological phase. While such interface states are usually gapped due to hybridization, the author proves that the interface states are in fact gapless when the two topological insulators have opposite chiralities. This is the first time that gapless topological novel interface states protected by mirror symmetry have been proposed. Second, the author studies the Weyl semimetal phase in thin topological insulators subjected to a magnetic field. This Weyl semimetal phase possesses edge states showing abnormal dispersion, which is not observed without mirror symmetry. The author explains that the edge states gain a finite velocity by a particular form of inversion symmetry breaking, which makes it possible to observe the phenomenon by means of electric conductivity.

Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines."

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

Design for AT-Speed Test, Diagnosis and Measurement is the first book to offer practical and proven design-for-testability (DFT) solutions to chip and system design engineers, test engineers and product managers at the silicon level as well as at the board and systems levels. Designers will see how the implementation of embedded test enables simplification of silicon debug and system bring-up. Test engineers will determine how embedded test provides a superior level of at-speed test, diagnosis and measurement without exceeding the capabilities of their equipment. Product managers will learn how the time, resources and costs associated with test development, manufacture cost and lifecycle maintenance of their products can be significantly reduced by designing embedded test in the product. A complete design flow and analysis of the impact of embedded test on a design makes this book a must read' before any DFT is attempted.

A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.

An increasing number of system designers are using ASIP 's rather than ASIC 's to implement their system solutions. Building ASIPs: The Mescal Methodology gives a simple but comprehensive methodology for the design of these application-specific instruction processors (ASIPs).

The key elements of this methodology are:

Judiciously using benchmarking

Inclusively identifying the architectural space

Efficiently describing and evaluating the ASIPs

Comprehensively exploring the design space

Successfully deploying the ASIP

This book includes demonstrations of applications of the methodologies using the Tipi research framework as well as state-of-the-art commercial toolsets from CoWare and Tensilica.

This book presents synthesis techniques for the preparation of low-dimensional nanomaterials including 0D (quantum dots), 1D (nanowires, nanotubes) and 2D (thin films, few layers), as well as their potential applications in nanoelectronic systems. It focuses on the size effects involved in the transition from bulk materials to nanomaterials; the electronic properties of nanoscale devices; and different classes of nanomaterials from microelectronics to nanoelectronics, to molecular electronics. Furthermore, it demonstrates the structural stability, physical, chemical, magnetic, optical, electrical, thermal, electronic and mechanical properties of the nanomaterials. Subsequent chapters address their characterization, fabrication techniques from lab-scale to mass production, and functionality. In turn, the book considers the environmental impact of nanotechnology and novel applications in the mechanical industries, energy harvesting, clean energy, manufacturing materials, electronics, transistors, health and medical therapy. In closing, it addresses the combination of biological systems with nanoelectronics and highlights examples of nanoelectronic-cell interfaces and other advanced medical applications. The book answers the following questions: * What is different at the nanoscale? * What is new about nanoscience? * What are nanomaterials (NMs)? * What are the fundamental issues in nanomaterials? * Where are nanomaterials found? * What nanomaterials exist in nature? * What is the importance of NMs in our lives? * Why so much interest in nanomaterials? * What is at nanoscale in nanomaterials? * What is graphene? * Are pure low-dimensional systems interesting and worth pursuing? * Are nanotechnology products currently available? * What are sensors? * How can Artificial Intelligence (AI) and nanotechnology work together? * What are the recent advances in nanoelectronic materials? * What are the latest applications of NMs?

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Adaptive Structural Systems with Piezoelectric Transducer Circuitry provides a comprehensive discussion on the integration of piezoelectric transducers with electrical circuitry for the development and enhancement of adaptive structural systems.

Covering a wide range of interdisciplinary research, this monograph presents a paradigm of taking full advantage of the two-way electro-mechanical coupling characteristics of piezoelectric transducers for structural control and identification in adaptive structural systems. Presenting descriptions of algorithm development, theoretical analysis and experimental investigation, engineers and researchers alike will find this a valuable reference.

This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and efficient switch drivers in standard CMOS technologies.

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Second-Generation High-Temperature Superconducting Coils and Their Applications for Energy Storage addresses the practical electric power applications of high-temperature superconductors. It validates the concept of a prototype energy storage system using newly available 2G HTS conductors by investigating the process of building a complete system from the initial design to the final experiment. It begins with a clear introduction of the related background and then presents a comprehensive design of a superconducting energy storage system that can store maximum energy using a limited length of superconductors. The author has created a modeling environment for analysis of the system and also presents experimental results that are highly consistent with his theoretical calculations.

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

Nanostructured films and coatings possess unique properties due to both size and interface effects. They find many applications in areas such as electronics, catalysis, protection, data storage, optics and sensors. The focus of the present book is on synthesis and processing; advanced characterization techniques; properties (including mechanical, chemical, electronic, thermal, catalytic, and magnetic); modelling of interlayer and intralayer interfaces; and applications.

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use. Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models. Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

This book, edited by Potyrailo and Amis, addresses a new paradigm-shifting approach in the search for new materials-Combinatorial Materials Science. One way to consider such an approach is to imagine an adventurous chef who decides to look for new entrees by cooking food ingredients in many pots using different combinations in every pot, and boil ing, steaming, or frying them in various ways. Although most of the pots will not have the tastiest food ever devised, some recipes will taste intriguing, and some eventually will lead to a discovery of a new fascinating cuisine. Of course, having a skilled chef design the com binatorial formulation will certainly be helpful in ensuring a successful outcome. Similar to food, each engineering material is a complex product of its chemical composition, structure, and processing. Generally, each of these components matters---change one and you get another material. Most of these "new" materials will be less good than ones we use now since existing materials have been refined with the extensive work of scientists and engi neers. At the same time if one prepares diverse materials like our adventurous chef, chang ing material composition, processing conditions and time, etc., some of these materials will be superior to existing ones and a few might represent breakout technology."

Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.

This thesis describes a new approach to the construction of "solar cells." Following nature's example, this approach has the goal to find a biomimetic self-assembling dye, whose aggregates can mimic the natural light-harvesting system of special photosynthetic active bacteria. The thesis investigates methods to control the self-assembly such that suitable dye aggregates are formed with high internal order and size-confinement. The dye aggregates can be implemented into a new type of "solar cells," designed to combine the advantages of "hybrid solar cells" and "solid-state dye-sensitized solar cells" (ss-DSSCs): dye aggregate solar cells (DASCs). This book describes the construction and first tests of a prototype for DASCs on the basis of the investigated dye aggregates. The described approach has the advantage that it will enable to build up a light-harvesting system fully synthetically in large scale in order to realize low-cost, light-weight and environmentally friendly solar cells - a worthwhile goal towards the exploitation of clean energy from sunlight.

Branch-and-bound search has been known for a long time and has been widely used in solving a variety of problems in computer-aided design (CAD) and many important optimization problems. In many applications, the classic branch-and-bound search methods perform duplications of computations, or rely on the search decision trees which keep track of the branch-and-bound search processes. In CAD and many other technical fields, the computational cost of constructing branch-and-bound search decision trees in solving large scale problems is prohibitive and duplications of computations are intolerable. Efficient branch-and-bound methods are needed to deal with today's computational challenges. Efficient branch-and-bound methods must not duplicate computations. Efficient Branch and Bound Search with Application to Computer-Aided Design describes an efficient branch-and-bound method for logic justification, which is fundamental to automatic test pattern generation (ATPG), redundancy identification, logic synthesis, minimization, verification, and other problems in CAD. The method is called justification equivalence, based on the observation that justification processes may share identical subsequent search decision sequences. With justification equivalence, duplication of computations is avoided in the dynamic branch-and-bound search process without using search decision trees. Efficient Branch and Bound Search with Application to Computer-Aided Design consists of two parts. The first part, containing the first three chapters, provides the theoretical work. The second part deals with applications, particularly ATPG for sequential circuits. This book is particularly useful to readers who are interested in the design and test of digital circuits.

This monographdeals with metastable states in amorphoussemiconductors- ma- rials which lack long-range periodicity in the atoms' positions, which are in th- modynamic nonequilibrium and which, in addition, have several metastable states. Thesestates giverise tovariouspropertiesandeffects- namelya widerangeofp- toinduced changes and high photosensitivity and X-ray sensitivity - that are unique among solid-state semiconductors.Historically, amorphousselenium and seleni- based materials have played an important role in physics and technology, and they continue to do so. In these materials there exist inherent intermediate (metastable) states, structural and electronic in origin, which lead to interesting properties and effects different from those of their crystalline counterparts. In this volume, the metastable states and related effects are investigated in depth against the background of a detailed consideration of local atomic and electronic structure, and taking into account a wide range of light-induced effects. Although the rst publications on amorphous semiconductors date back to the early 1970s, studies of metastable states in these materials had not been analyzed systematically up to now, which led to erroneous ideas, even among specialists. In the present book, experimental investigations of metastable states are reported in detail for elemental selenium and selenium-based materials.

System Test and Diagnosis is the first book on test and diagnosis at the system level, defined as any aggregation of related elements that together form an entity of sufficient complexity for which it is impractical to treat all of the elements at the lowest level of detail. The ideas presented emphasize that it is possible to diagnose complex systems efficiently. Since the notion of system is hierarchical, these ideas are applicable to all levels. The philosophy is presented in the context of a model-based approach, using the information flow model, that focuses on the information provided by the tests rather than the functions embedded in the system. Detailed algorithms are offered for evaluating system testability, performing efficient diagnosis, verifying and validating the models, and constructing an architecture for system maintenance. Several advanced algorithms, not commonly available in existing diagnosis tools, are discussed, including reasoning with inexact or uncertain test data, breaking large problems into manageable smaller problems, diagnosing systems with time sensitive information and time dependent tests and learning from experience. The book is divided into three parts. The first part provides motivation for careful development of the subject and the second part provides the tools necessary for analyzing system testability and computing diagnostic strategies. The third part presents advanced topics in diagnosis. Several case studies are provided, including a single detailed case study. Smaller case studies describe experiences from actual applications of the methods discussed. The detailed case study walks the reader through a complete analysis of a system to illustrate the concepts and describe the analyses that are possible. All case studies are based upon real systems that have been modeled for the purposes of diagnosis. System Test and Diagnosis is the culmination of nearly twelve years of research into diagnosis modeling and its applications. It is designed as a primary reference for engineers and practitioners interested in system test and diagnosis.