Design for AT-Speed Test, Diagnosis and Measurement is the first book to offer practical and proven design-for-testability (DFT) solutions to chip and system design engineers, test engineers and product managers at the silicon level as well as at the board and systems levels. Designers will see how the implementation of embedded test enables simplification of silicon debug and system bring-up. Test engineers will determine how embedded test provides a superior level of at-speed test, diagnosis and measurement without exceeding the capabilities of their equipment. Product managers will learn how the time, resources and costs associated with test development, manufacture cost and lifecycle maintenance of their products can be significantly reduced by designing embedded test in the product. A complete design flow and analysis of the impact of embedded test on a design makes this book a must read' before any DFT is attempted.

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.

Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.

Adaptive Structural Systems with Piezoelectric Transducer Circuitry provides a comprehensive discussion on the integration of piezoelectric transducers with electrical circuitry for the development and enhancement of adaptive structural systems.

Covering a wide range of interdisciplinary research, this monograph presents a paradigm of taking full advantage of the two-way electro-mechanical coupling characteristics of piezoelectric transducers for structural control and identification in adaptive structural systems. Presenting descriptions of algorithm development, theoretical analysis and experimental investigation, engineers and researchers alike will find this a valuable reference.

This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and efficient switch drivers in standard CMOS technologies.

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use. Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models. Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Second-Generation High-Temperature Superconducting Coils and Their Applications for Energy Storage addresses the practical electric power applications of high-temperature superconductors. It validates the concept of a prototype energy storage system using newly available 2G HTS conductors by investigating the process of building a complete system from the initial design to the final experiment. It begins with a clear introduction of the related background and then presents a comprehensive design of a superconducting energy storage system that can store maximum energy using a limited length of superconductors. The author has created a modeling environment for analysis of the system and also presents experimental results that are highly consistent with his theoretical calculations.

Nanostructured films and coatings possess unique properties due to both size and interface effects. They find many applications in areas such as electronics, catalysis, protection, data storage, optics and sensors. The focus of the present book is on synthesis and processing; advanced characterization techniques; properties (including mechanical, chemical, electronic, thermal, catalytic, and magnetic); modelling of interlayer and intralayer interfaces; and applications.

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

System Test and Diagnosis is the first book on test and diagnosis at the system level, defined as any aggregation of related elements that together form an entity of sufficient complexity for which it is impractical to treat all of the elements at the lowest level of detail. The ideas presented emphasize that it is possible to diagnose complex systems efficiently. Since the notion of system is hierarchical, these ideas are applicable to all levels. The philosophy is presented in the context of a model-based approach, using the information flow model, that focuses on the information provided by the tests rather than the functions embedded in the system. Detailed algorithms are offered for evaluating system testability, performing efficient diagnosis, verifying and validating the models, and constructing an architecture for system maintenance. Several advanced algorithms, not commonly available in existing diagnosis tools, are discussed, including reasoning with inexact or uncertain test data, breaking large problems into manageable smaller problems, diagnosing systems with time sensitive information and time dependent tests and learning from experience. The book is divided into three parts. The first part provides motivation for careful development of the subject and the second part provides the tools necessary for analyzing system testability and computing diagnostic strategies. The third part presents advanced topics in diagnosis. Several case studies are provided, including a single detailed case study. Smaller case studies describe experiences from actual applications of the methods discussed. The detailed case study walks the reader through a complete analysis of a system to illustrate the concepts and describe the analyses that are possible. All case studies are based upon real systems that have been modeled for the purposes of diagnosis. System Test and Diagnosis is the culmination of nearly twelve years of research into diagnosis modeling and its applications. It is designed as a primary reference for engineers and practitioners interested in system test and diagnosis.

Branch-and-bound search has been known for a long time and has been widely used in solving a variety of problems in computer-aided design (CAD) and many important optimization problems. In many applications, the classic branch-and-bound search methods perform duplications of computations, or rely on the search decision trees which keep track of the branch-and-bound search processes. In CAD and many other technical fields, the computational cost of constructing branch-and-bound search decision trees in solving large scale problems is prohibitive and duplications of computations are intolerable. Efficient branch-and-bound methods are needed to deal with today's computational challenges. Efficient branch-and-bound methods must not duplicate computations. Efficient Branch and Bound Search with Application to Computer-Aided Design describes an efficient branch-and-bound method for logic justification, which is fundamental to automatic test pattern generation (ATPG), redundancy identification, logic synthesis, minimization, verification, and other problems in CAD. The method is called justification equivalence, based on the observation that justification processes may share identical subsequent search decision sequences. With justification equivalence, duplication of computations is avoided in the dynamic branch-and-bound search process without using search decision trees. Efficient Branch and Bound Search with Application to Computer-Aided Design consists of two parts. The first part, containing the first three chapters, provides the theoretical work. The second part deals with applications, particularly ATPG for sequential circuits. This book is particularly useful to readers who are interested in the design and test of digital circuits.

This book, edited by Potyrailo and Amis, addresses a new paradigm-shifting approach in the search for new materials-Combinatorial Materials Science. One way to consider such an approach is to imagine an adventurous chef who decides to look for new entrees by cooking food ingredients in many pots using different combinations in every pot, and boil ing, steaming, or frying them in various ways. Although most of the pots will not have the tastiest food ever devised, some recipes will taste intriguing, and some eventually will lead to a discovery of a new fascinating cuisine. Of course, having a skilled chef design the com binatorial formulation will certainly be helpful in ensuring a successful outcome. Similar to food, each engineering material is a complex product of its chemical composition, structure, and processing. Generally, each of these components matters---change one and you get another material. Most of these "new" materials will be less good than ones we use now since existing materials have been refined with the extensive work of scientists and engi neers. At the same time if one prepares diverse materials like our adventurous chef, chang ing material composition, processing conditions and time, etc., some of these materials will be superior to existing ones and a few might represent breakout technology."

Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations."

The great interest in photonic crystals and their applications in the last 15 years is being expressed in the publishing of a large number of monographs, collections, textbooks and tutorials, where existing knowledge concerning - eration principles of photonic crystal devices and microstructured ?bers, their mathematicaldescription,well-knownandnovelapplicationsofsuchtechno- gies in photonics and optical communications are presented. They challenges authors of new books to cover the gaps still existing in the literature and highlight and popularize of already known material in a new and original manner. Authorsofthisbookbelievethatthenextsteptowardswideapplicationof photoniccrystalsisthesolutionofmanypracticalproblemsofdesignandc- putation of the speci?c photonic crystal-based devices aimed at the speci?c technicalapplication.Inordertomakethisstep,itisnecessarytoincreasethe number of practitioners who can solve such problems independently. The aim of this book is to extend the group of researchers, developers and students, who could practically use the knowledge on the physics of photonic crystals together with the knowledge and skills of independent calculation of basic characteristics of photonic crystals and modeling of various elements of - tegrated circuits and optical communication systems created on the basis of photonic crystals. The book is intended for quali?ed readers, specialists in the ?eld of optics and photonics, students of higher courses, master degree students and PhD students. As an introduction to the snopest, the book contains the basics of wave optics and radiation propagation in simple guiding media such as planar waveguides and step-index ?bers.

This book presents an in-depth discussion of the semiconductor-laser gain medium. The optical and electronic properties of semiconductors, particularly semiconductor quantum-well systems, are analzyed in detail, covering a wide variety of near-infrared systems with or without strain, as well as wide-gap materials such as the group-III nitride compounds or the II-VI materials. The important bandstructure modifications and Coulomb interaction effects are discussed, including the solution of the longstanding semiconductor laser lineshape problem. Quantitative comparisons between measured and predicted gain/absorption and refractive index spectra for a wide variety of semiconductor-laser materials enable the theoretical results to be used directly in the engineering of advanced laser and amplifier structures. A wealth of examples for many different material combinations bestow the book with quantitative and predictive value for a wide variety of applications.

This thesis describes a new approach to the construction of "solar cells." Following nature's example, this approach has the goal to find a biomimetic self-assembling dye, whose aggregates can mimic the natural light-harvesting system of special photosynthetic active bacteria. The thesis investigates methods to control the self-assembly such that suitable dye aggregates are formed with high internal order and size-confinement. The dye aggregates can be implemented into a new type of "solar cells," designed to combine the advantages of "hybrid solar cells" and "solid-state dye-sensitized solar cells" (ss-DSSCs): dye aggregate solar cells (DASCs). This book describes the construction and first tests of a prototype for DASCs on the basis of the investigated dye aggregates. The described approach has the advantage that it will enable to build up a light-harvesting system fully synthetically in large scale in order to realize low-cost, light-weight and environmentally friendly solar cells - a worthwhile goal towards the exploitation of clean energy from sunlight.

Scanning Probe Lithography (SPL) describes recent advances in the field of scanning probe lithography, a high resolution patterning technique that uses a sharp tip in close proximity to a sample to pattern nanometer-scale features on the sample. SPL is capable of patterning sub-30nm features with nanometer-scale alignment registration. It is a relatively simple, inexpensive, reliable method for patterning nanometer-scale features on various substrates. It has potential applications for nanometer-scale research, for maskless semiconductor lithography, and for photomask patterning. The authors of this book have been key players in this exciting new field. Calvin Quate has been involved since the beginning in the early 1980s and leads the research time that is regarded as the foremost group in this field. Hyongsok Tom Soh and Kathryn Wilder Guarini have been the members of this group who, in the last few years, have brought about remarkable series of advances in SPM lithography. Some of these advances have been in the control of the tip which has allowed the scanning speed to be increased from mum/second to mm/second. Both non-contact and in-contact writing have been demonstrated as has controlled writing of sub-100 nm lines over large steps on the substrate surface. The engineering of a custom-designed MOSFET built into each microcantilever for individual current control is another notable achievement. Micromachined arrays of probes each with individual control have been demonstrated. One of the most intriguing new aspects is the use of directly-grown carbon nanotubes as robust, high-resolution emitters. In this book the authors concisely and authoritatively describe the historical context, the relevant inventions, and the prospects for eventual manufacturing use of this exciting new technology.

This monographdeals with metastable states in amorphoussemiconductors- ma- rials which lack long-range periodicity in the atoms' positions, which are in th- modynamic nonequilibrium and which, in addition, have several metastable states. Thesestates giverise tovariouspropertiesandeffects- namelya widerangeofp- toinduced changes and high photosensitivity and X-ray sensitivity - that are unique among solid-state semiconductors.Historically, amorphousselenium and seleni- based materials have played an important role in physics and technology, and they continue to do so. In these materials there exist inherent intermediate (metastable) states, structural and electronic in origin, which lead to interesting properties and effects different from those of their crystalline counterparts. In this volume, the metastable states and related effects are investigated in depth against the background of a detailed consideration of local atomic and electronic structure, and taking into account a wide range of light-induced effects. Although the rst publications on amorphous semiconductors date back to the early 1970s, studies of metastable states in these materials had not been analyzed systematically up to now, which led to erroneous ideas, even among specialists. In the present book, experimental investigations of metastable states are reported in detail for elemental selenium and selenium-based materials.

This book describes intuitive analog design approaches using digital inverters, providing filter architectures and circuit techniques enabling high performance analog circuit design. The authors provide process, supply voltage and temperature (PVT) variation-tolerant design techniques for inverter based circuits. They also discuss various analog design techniques for lower technology nodes and lower power supply, which can be used for designing high performance systems-on-chip.