The principal aim of this NATO Advanced Study Institute (ASI) "Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology" was to present a contemporary overview of the field of nanostructured and advanced electronic materials. Nanotechnology is an emerging scientific field receiving significant worldwide attention. On a nanometer scale, materials or structures may possess new and unique physical properties. Some of these are now known to the scientific community, but there may well be many properties not yet known to us, rendering it as a fascinating area of research and a suitable subject for a NATO ASI. Yet another aspect of the field is the possibility for creating meta-stable phases with unconventional properties and the ultra-miniaturization of current devices, sensors, and machines. Such nanotechnological and related advanced materials have an extremely wide range of potential applications, viz. nanoscale electronics, sensors, optoelectronics, photonics, nano-biological systems, na- medicine, energy storage systems, etc. This is a wide-ranging subject area and therefore requires the formation of multi-disciplinary teams of physicists, chemists, materials scientists, engineers, molecular biologists, pharmacologists, and others to work together on the synthesis and processing of materials and structures, the understanding of their physical properties, the design and fabrication of devices, etc. Hence, in formulating our ASI, we adopted an int- disciplinary approach, bringing together recognised experts in the various fields while retaining a level of treatment accessible to those active in specific individual areas of research and development.

Thisvolumereportsthemajorpartofthescientificcontributionsofthefirstinternational workshoponSuperconductingNano-ElectronicsDevices(SNED)heldinNapoli,Italy,at theendofMay2001. Theaimoftheworkshopwastofocusonrecentexperimentalandtheoreticalresultsin thefieldofsuperconductingnano-electronicsdevices. Itcombinedphysicswithpresent andfuturetechnologicalapplications:bothfundamentalandappliedaspectswerecovered. SpecialemphasiswasgiventoquantumcoherenceandcomputationusingsmallJosephson junctions,noiseinultrasensitivenanodevicesandpossibilitiesofmakinguseofsupercon- ductivityinvariouson-chipdevices. Withtheseattributesandwithrecognizedinvited speakersintheirspecialtiestheworkshopmanagedtobringtogetheracollectionof scientistsfromnearbybutdistinctresearchcommunities. Thiswaytheatmosphereofthe workshopbecameveryopenanddiscussionswerelivelybothduringandoutsidethe sessions. Thisfreshdiscussionhopefullygaveeveryparticipantalotofnewideasfor furtherworkbackintheirhomeinstitutes. OneofthecentraltopicsintheworkshopwastheuseofdifferentJosephsonjunction configurationsasimplementationsofquantumbits. Atthetimeoftheworkshopwewere justwaitingforthesecondwaveofbreakthroughsinthisfield:theresultsemergingfrom theparticipatinglaboratoriesoftheworkshopjustatthetimeofthewritingofthispreface perhapsalsoprovetheusefulnessofourworkshop. Anotherfocuswasonvarioustopicsrelatedtoultrasensativedetectors. Theybring quantumlimitationstoapplications,andmanydeviceconceptsareresultsofunderstanding fundamentalandexcitingphenomenainsuperconductivity. Noiseandon-chipcooling wereexplicitlydiscussedinthedetectorsessionsaswell. ThechoiceofthelocationrecognizestheroleandthetraditionsofNapoliespeciallyin thefieldofmacroscopicquantumcoherence,oneofthemainissuesoftheworkshop. It furtherguaranteedtheparticipantsastimulatingatmosphereatthemeeting. Inconclusion,wewishtothanktheIstitutoItalianopergliStudiFilosofici,theIstituto diCiberneticadelConsiglioNazionaledelleRicerche,theUniversityofJyviiskylii,the IstitutoNazionalediFisicaNucleare,theIstitutoNazionalediFisicadellaMateria,the DipartimentoScienzeFisiche,andtheRettoratodell'UniversitadiNapoli"FedericoII" fortheirsupport. ThanksarealsoduetoAirLiquide,CRY,Nanoway,OxfordInstruments, andRaith. ThisinitiativeisintheframeoftheinternationalactivityofMQC2Association on"MacroscopicQuantumCoherenceandComputing. "WeareindebtedtoC. Granata v vi PREFACE and V. Coratoforscientificassistance,andtoF. Caiazzo,E. DeGrazia,andA. M. Mazzarellafortheirvaluableassistanceinallthetasksconnectedtotheorganizationofthe Workshop. WearealsogratefultoL. Longobardi,A. Monaco,S. Piscitelli,andS. Rombetto forhintsandhelpduringtheWorkshop. ThanksareduetoL. DeFelice,S. Luongo,and V. Sindonifortheorganizationofthesocialevent. J. Pekola B. Ruggiero P. Silvestrini CONTENTS QuantumNondemolitionMeasurementsofaQubit . D. V. Averin BayesianQuantumMeasurementofaSingle-Cooper-PairQubit 11 A. Korotkov lIfNoiseinJosephsonQubits 15 E. Paladino, L. Faoro,G. Falci,and R. Fazio SwitchingCurrentsandQuasi-ParticlePoisoningintheSuperconducting SingleElectronTransistor 25 P. Agren,J. Walter,V. Sch611mann,andD. B. Haviland JosephsonSystemsforQuantumCoherenceExperiments 33 V. Corato,C. Granata, L. Longobardi,M. Russo,B. Ruggiero, andP. Silvestrini SolidStateAnalogueofDoubleSlitInterferometer...43 K. Yu. Arutyunov, T. T. Hongisto,andJ. P. Pekola NoiseandMicrowavePropertiesofSET-Transistors...53 M. Ejrnres,M. T. Savolainen,andJ. Mygind UseofSmallThnnelJunctionsOperatingatT=0. 3K 63 R. Leoni,M. G. Castellano,F. Chiarello,andG. Torrioli AHystericSingleCooperPairTransistorforSingleShotReadingof 73 aCharge-Qubit A. Cottet,D. Vion,P. Joyez,D. Esteve,andM. H. Devoret SingleCooperPairElectrometerBasedonaRadio-Frequency-SQUID Scheme 87 A. B. Zorin vii viii CONTENTS PossibilityofSingle-ElectronDevicesandSuperconductingCoherence 97 Yu. A. Pashkin, Y. Nakamura,T. Yamamoto,andJ. S. Tsai Frequency-LockedCurrentofCooperPairsinSuperconductingSingle ElectronTransistorwithOhmicResistor...105 S. V. Lotkhov,S. A. Bogoslovsky, A. B. Zorin,andJ. Niemeyer SetupforExperimentsontheSupercurrent-PhaseRelationinBloch Transistors-StatusandPossibleApplications 115 M. Gotz, V. V. Khanin, A. B. Zorin,E. Il'ichev,S. A. Bogoslovsky, andJ. Niemeyer Single-ElectronTransistorsintheRegimeofHighConductance...123 C. Wallisser,B;Limblach,P. yomStein,and R. Schiifer SuperconductingTransistor-EdgeSensorsforTime&EnergyResolved Single-PhotonCountersandforDarkMatterSearches 133 B. Cabrera OptimizationoftheHot-ElectronBolometerandaCascadeQuasiparticle 145 L. Kuzrnin NoiseinRefrigeratingTunnelJunctionsandinMicrobolometers...153 D. V. Anghel NonequilibriumQuasiparticlesandElectronCoolingbyNormalMetal- SuperconductorTunnelJunctions...165 D. Golubevand A. Vasenko MesoscopicJosephsonJunctionsCoupledtoWeakCoherentFields: AnExampleofReciprocalDetection 175 R. Miglioreand A. Messina DynamicsofSuperconductingInterferometersContainingPi-Junctions 183 V. K. Kornev, I. I. Soloviev, I. V. Borisenko,P. B. Mozhaev, andG. A.

The motion of electrons in superconductors seems to exceed our imagination based on daily experience with Newtonian mechanics. This book shows that the classical concepts, such as the balance of forces acting on electrons, are useful for understanding superconductivity. The electrostatic field plays a natural part in this balance as it mediates forces between electrons at long distances.

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

When basic researchers started working on semiconductors during the late nineteen thirties and on integrated circuits at the end of the nineteen fifties, they did not know that their work would change the lives of future generations. Very few people at that time recognized the significance of, perhaps, the most important invention of the century. Historians have assigned the invention of integrated circuits to Jack Kilby and Robert Noyce. In this book, the author argues that the group of inventors was much larger. This richly illustrated account is a personal recollection of the development of integrated circuits and personalities a" such as Russell Ohl, Karl Lark-Horovitz, William Shockley, Carl Frosch, Lincoln Derick, Calvin Fuller, Kurt Lehovec. Jean Hoerni, Sheldon Roberts, Jay Last, Isy Haas, Bob Norman, Dave Allison, Jim Nall, Tom Longo, Bob Widlar, Dave Talbert, Frank Wanlass, and Federico Faggin. Here is the first comprehensive behind-the-scenes account of the history of the integrated circuit, the microelectronics industry, and the people closely involved in the development of the transistor and the integrated circuit.

"Your book is going to make a major contribution to semiconductor history. You and I agree that, while the world loves a hero, semiconductor progress depended on the efforts and ideas of a large number of people, and that moving forward depended on contributors going back a few decades in some cases. Also, as is the case with most inventions, a number of people with access to the same pool of common knowledge were working independently at the same time to put it all together and to make the necessary extensions to the existing technology and whorealized that the time was right for society to accept the new concepts. Your diligent research points all of this out."

Dr. Jay Last, Former Shockley Laboratories employee, co-founder of Fairchild Semiconductor, co-founder of Amelco Semiconductor, and manager of Fairchilda (TM)s group which designed and produced the world first planar integrated circuit.

"Bo Lojek presents a remarkable document of the most important and significant technical development of our times. He describes in astounding detail the engineering efforts of modern microelectronics. He concentrates on the history of silicon semiconductor devices. Californiaa (TM)s "Silicon Valley" is the center of attention, together with its ancestry of transistor invention at Bell Laboratories. He has collected a wealth of illustrative documentation, gives incisive insight into the lives of the main actors and shows the often tragic fates of the engineers and businessmen. He does not hide his firm belief in the individual engineer and warns of the retarding influence of present-day political correctness."

Dr. Hans J. Queisser, Former Shockley Semiconductor scientist and retired director of the Max-Planck-Institute for Solids, Stuttgart, Germany.

"The technical history of the semiconductor history rivals the 1849 California Gold Rush as a period filled with excitement and opportunity. Although I cannot first hand validate its complete accuracy, I enthusiastically encourage you to read the collected facts, opinions, and views of an author who was actually part of this amazing period, viewing it as a successful practicing Engineer during this "gold rush" - like hey-day of the semiconductor industry.

For educators andtechnologists you will find this collection of data, facts, and opinions, collected and observed first hand by the author, fascinating! It is a tough read for others due to the writing experience of the author and its technical focus."

John F. Gifford, Former Fairchild Semiconductor Marketing Manager of Linear Integrated Circuits, co-founder of Advanced Micro Devices, and President and Chief Executive Officer of Maxim Integrated Products.

"Bo Lojek gets it right! There are few industries as dynamic as semiconductors and the history of the semiconductor industry is still unfolding. This book gives the history of people, places and technology that resulted in todaya (TM)s semiconductor industry. I particularly like the inclusion of many technical pieces in the book."

Robert Dobkin, Former National Semiconductor Director of Advanced Circuit Development and co-founder and Chief Technical Officer of Linear Technology Corporation.

The application of quantitative reliability evaluation in electric power sys tems has now evolved to the point at which most utilities use these techniques in one or more areas of their planning, design, and operation. Most of the techniques in use are based on analytical models and resulting analytical evaluation procedures. Improvements in and availability of high-speed digi tal computers have created the opportunity to analyze many of these prob lems using stochastic simulation methods and over the last decade there has been increased interest in and use made of Monte Carlo simulation in quantitative power system reliability assessment. Monte Carlo simulation is not a new concept and recorded applications have existed for at least 50 yr. However, localized high-speed computers with large-capacity storage have made Monte Carlo simulation an available and sometimes preferable option for many power system reliability applications. Monte Carlo simulation is also an integral part of a modern undergrad uate or graduate course on reliability evaluation of general engineering systems or specialized areas such as electric power systems. It is hoped that this textbook will help formalize the many existing applications of Monte Carlo simulation and assist in their integration in teaching programs. This book presents the basic concepts associated with Monte Carlo simulation."

BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.

The major thrust of this book is the realisation of an all optical computer. To that end it discusses optoelectronic devices and applications, transmission systems, integrated optoelectronic systems and, of course, all optical computers. The chapters on heterostructure light emitting devices' quantum well carrier transport optoelectronic devices' present the most recent advances in device physics, together with modern devices and their applications. The chapter on microcavity lasers' is essential to the discussion of present and future developments in solid-state laser physics and technology and puts into perspective the present state of research into and the technology of optoelectronic devices, within the context of their use in advanced systems. A significant part of the book deals with problems of propagation in quantum structures. soliton-based switching, gating and transmission systems' presents the basics of controlling the propagation of photons in solids and the use of this control in devices. The chapters on optoelectronic processing using smart pixels' and all optical computers' are preceded by introductory material in fundamentals of quantum structures for optoelectronic devices and systems' and linear and nonlinear absorption and reflection in quantum well structures'. It is clear that new architectures will be necessary if we are to fully utilise the potentiality of electrooptic devices in computing, but even current architectures and structures demonstrate the feasibility of the all optical computer: one that is possible today.

Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.

Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines."

This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.

In this book, the author theoretically studies two aspects of topological states. First, novel states arising from hybridizing surface states of topological insulators are theoretically introduced. As a remarkable example, the author shows the existence of gapless interface states at the interface between two different topological insulators, which belong to the same topological phase. While such interface states are usually gapped due to hybridization, the author proves that the interface states are in fact gapless when the two topological insulators have opposite chiralities. This is the first time that gapless topological novel interface states protected by mirror symmetry have been proposed. Second, the author studies the Weyl semimetal phase in thin topological insulators subjected to a magnetic field. This Weyl semimetal phase possesses edge states showing abnormal dispersion, which is not observed without mirror symmetry. The author explains that the edge states gain a finite velocity by a particular form of inversion symmetry breaking, which makes it possible to observe the phenomenon by means of electric conductivity.

An increasing number of system designers are using ASIP 's rather than ASIC 's to implement their system solutions. Building ASIPs: The Mescal Methodology gives a simple but comprehensive methodology for the design of these application-specific instruction processors (ASIPs).

The key elements of this methodology are:

Judiciously using benchmarking

Inclusively identifying the architectural space

Efficiently describing and evaluating the ASIPs

Comprehensively exploring the design space

Successfully deploying the ASIP

This book includes demonstrations of applications of the methodologies using the Tipi research framework as well as state-of-the-art commercial toolsets from CoWare and Tensilica.

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

Design for AT-Speed Test, Diagnosis and Measurement is the first book to offer practical and proven design-for-testability (DFT) solutions to chip and system design engineers, test engineers and product managers at the silicon level as well as at the board and systems levels. Designers will see how the implementation of embedded test enables simplification of silicon debug and system bring-up. Test engineers will determine how embedded test provides a superior level of at-speed test, diagnosis and measurement without exceeding the capabilities of their equipment. Product managers will learn how the time, resources and costs associated with test development, manufacture cost and lifecycle maintenance of their products can be significantly reduced by designing embedded test in the product. A complete design flow and analysis of the impact of embedded test on a design makes this book a must read' before any DFT is attempted.

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.

Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.

Adaptive Structural Systems with Piezoelectric Transducer Circuitry provides a comprehensive discussion on the integration of piezoelectric transducers with electrical circuitry for the development and enhancement of adaptive structural systems.

Covering a wide range of interdisciplinary research, this monograph presents a paradigm of taking full advantage of the two-way electro-mechanical coupling characteristics of piezoelectric transducers for structural control and identification in adaptive structural systems. Presenting descriptions of algorithm development, theoretical analysis and experimental investigation, engineers and researchers alike will find this a valuable reference.

This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and efficient switch drivers in standard CMOS technologies.

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use. Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models. Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.