This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requires more accurate circuit analysis methods and tools, prompting the introduction of computers into the design process. The goal of this book is to build a firm foundation in the use of computer-assisted techniques for IC device and process design. Both practical and analytical viewpoints are stressed to give the reader the background necessary to appreciate CAD tools and to feel comfortable with their use. Technology CAD - Computer Simulation of IC Processes and Devices presents a unified discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Chapter 1 focuses on the motivation for coupled process and device CAD. In Chapter 2 SUPREM III is introduced, and process CAD is discussed in terms of ion-implantation, impurity diffusion, and oxidation models. Chapter 3 introduces the Stanford device analysis program SEDAN III (SEmiconductor Device ANalysis). The next three chapters move into greater detail concerning device operating principles and analysis techniques. Chapter 4 reviews the classical formulation of pn junction theory and uses device analysis (SEDAN) both to evaluate some of the classical assumptions and to investigate the difficult problem of high level injection. Chapter 5 returns to MOS devices, reviews the first-order MOS theory, and introduces some important second-order effects. Chapter 6 considers the bipolar transistor. Chapter 7considers the application of process simulation and device analysis to technology design. The BiCMOS process is selected as a useful design vehicle for two reasons. First, it allows the reader to pull together concepts from the entire book. Second, the inherent nature of BiCMOS technology offers real constraints and hence trade-offs which must be understood and accounted for.

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Second-Generation High-Temperature Superconducting Coils and Their Applications for Energy Storage addresses the practical electric power applications of high-temperature superconductors. It validates the concept of a prototype energy storage system using newly available 2G HTS conductors by investigating the process of building a complete system from the initial design to the final experiment. It begins with a clear introduction of the related background and then presents a comprehensive design of a superconducting energy storage system that can store maximum energy using a limited length of superconductors. The author has created a modeling environment for analysis of the system and also presents experimental results that are highly consistent with his theoretical calculations.

Nanostructured films and coatings possess unique properties due to both size and interface effects. They find many applications in areas such as electronics, catalysis, protection, data storage, optics and sensors. The focus of the present book is on synthesis and processing; advanced characterization techniques; properties (including mechanical, chemical, electronic, thermal, catalytic, and magnetic); modelling of interlayer and intralayer interfaces; and applications.

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

System Test and Diagnosis is the first book on test and diagnosis at the system level, defined as any aggregation of related elements that together form an entity of sufficient complexity for which it is impractical to treat all of the elements at the lowest level of detail. The ideas presented emphasize that it is possible to diagnose complex systems efficiently. Since the notion of system is hierarchical, these ideas are applicable to all levels. The philosophy is presented in the context of a model-based approach, using the information flow model, that focuses on the information provided by the tests rather than the functions embedded in the system. Detailed algorithms are offered for evaluating system testability, performing efficient diagnosis, verifying and validating the models, and constructing an architecture for system maintenance. Several advanced algorithms, not commonly available in existing diagnosis tools, are discussed, including reasoning with inexact or uncertain test data, breaking large problems into manageable smaller problems, diagnosing systems with time sensitive information and time dependent tests and learning from experience. The book is divided into three parts. The first part provides motivation for careful development of the subject and the second part provides the tools necessary for analyzing system testability and computing diagnostic strategies. The third part presents advanced topics in diagnosis. Several case studies are provided, including a single detailed case study. Smaller case studies describe experiences from actual applications of the methods discussed. The detailed case study walks the reader through a complete analysis of a system to illustrate the concepts and describe the analyses that are possible. All case studies are based upon real systems that have been modeled for the purposes of diagnosis. System Test and Diagnosis is the culmination of nearly twelve years of research into diagnosis modeling and its applications. It is designed as a primary reference for engineers and practitioners interested in system test and diagnosis.

Branch-and-bound search has been known for a long time and has been widely used in solving a variety of problems in computer-aided design (CAD) and many important optimization problems. In many applications, the classic branch-and-bound search methods perform duplications of computations, or rely on the search decision trees which keep track of the branch-and-bound search processes. In CAD and many other technical fields, the computational cost of constructing branch-and-bound search decision trees in solving large scale problems is prohibitive and duplications of computations are intolerable. Efficient branch-and-bound methods are needed to deal with today's computational challenges. Efficient branch-and-bound methods must not duplicate computations. Efficient Branch and Bound Search with Application to Computer-Aided Design describes an efficient branch-and-bound method for logic justification, which is fundamental to automatic test pattern generation (ATPG), redundancy identification, logic synthesis, minimization, verification, and other problems in CAD. The method is called justification equivalence, based on the observation that justification processes may share identical subsequent search decision sequences. With justification equivalence, duplication of computations is avoided in the dynamic branch-and-bound search process without using search decision trees. Efficient Branch and Bound Search with Application to Computer-Aided Design consists of two parts. The first part, containing the first three chapters, provides the theoretical work. The second part deals with applications, particularly ATPG for sequential circuits. This book is particularly useful to readers who are interested in the design and test of digital circuits.

Summarizes current recycling processes, challenges, and perspectives. Offers a comprehensive review of current commercialized LIB recycling companies. Showcases an innovative closed-loop hydrometallurgical recycling process to recycle lithium cathode materials. Provides detailed modelling and economic analysis of several hydrometallurgical recycling processes. Features practical cases and data developed by the authors.

This book, edited by Potyrailo and Amis, addresses a new paradigm-shifting approach in the search for new materials-Combinatorial Materials Science. One way to consider such an approach is to imagine an adventurous chef who decides to look for new entrees by cooking food ingredients in many pots using different combinations in every pot, and boil ing, steaming, or frying them in various ways. Although most of the pots will not have the tastiest food ever devised, some recipes will taste intriguing, and some eventually will lead to a discovery of a new fascinating cuisine. Of course, having a skilled chef design the com binatorial formulation will certainly be helpful in ensuring a successful outcome. Similar to food, each engineering material is a complex product of its chemical composition, structure, and processing. Generally, each of these components matters---change one and you get another material. Most of these "new" materials will be less good than ones we use now since existing materials have been refined with the extensive work of scientists and engi neers. At the same time if one prepares diverse materials like our adventurous chef, chang ing material composition, processing conditions and time, etc., some of these materials will be superior to existing ones and a few might represent breakout technology."

Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations."

The great interest in photonic crystals and their applications in the last 15 years is being expressed in the publishing of a large number of monographs, collections, textbooks and tutorials, where existing knowledge concerning - eration principles of photonic crystal devices and microstructured ?bers, their mathematicaldescription,well-knownandnovelapplicationsofsuchtechno- gies in photonics and optical communications are presented. They challenges authors of new books to cover the gaps still existing in the literature and highlight and popularize of already known material in a new and original manner. Authorsofthisbookbelievethatthenextsteptowardswideapplicationof photoniccrystalsisthesolutionofmanypracticalproblemsofdesignandc- putation of the speci?c photonic crystal-based devices aimed at the speci?c technicalapplication.Inordertomakethisstep,itisnecessarytoincreasethe number of practitioners who can solve such problems independently. The aim of this book is to extend the group of researchers, developers and students, who could practically use the knowledge on the physics of photonic crystals together with the knowledge and skills of independent calculation of basic characteristics of photonic crystals and modeling of various elements of - tegrated circuits and optical communication systems created on the basis of photonic crystals. The book is intended for quali?ed readers, specialists in the ?eld of optics and photonics, students of higher courses, master degree students and PhD students. As an introduction to the snopest, the book contains the basics of wave optics and radiation propagation in simple guiding media such as planar waveguides and step-index ?bers.

This book presents an in-depth discussion of the semiconductor-laser gain medium. The optical and electronic properties of semiconductors, particularly semiconductor quantum-well systems, are analzyed in detail, covering a wide variety of near-infrared systems with or without strain, as well as wide-gap materials such as the group-III nitride compounds or the II-VI materials. The important bandstructure modifications and Coulomb interaction effects are discussed, including the solution of the longstanding semiconductor laser lineshape problem. Quantitative comparisons between measured and predicted gain/absorption and refractive index spectra for a wide variety of semiconductor-laser materials enable the theoretical results to be used directly in the engineering of advanced laser and amplifier structures. A wealth of examples for many different material combinations bestow the book with quantitative and predictive value for a wide variety of applications.

This thesis describes a new approach to the construction of "solar cells." Following nature's example, this approach has the goal to find a biomimetic self-assembling dye, whose aggregates can mimic the natural light-harvesting system of special photosynthetic active bacteria. The thesis investigates methods to control the self-assembly such that suitable dye aggregates are formed with high internal order and size-confinement. The dye aggregates can be implemented into a new type of "solar cells," designed to combine the advantages of "hybrid solar cells" and "solid-state dye-sensitized solar cells" (ss-DSSCs): dye aggregate solar cells (DASCs). This book describes the construction and first tests of a prototype for DASCs on the basis of the investigated dye aggregates. The described approach has the advantage that it will enable to build up a light-harvesting system fully synthetically in large scale in order to realize low-cost, light-weight and environmentally friendly solar cells - a worthwhile goal towards the exploitation of clean energy from sunlight.

Scanning Probe Lithography (SPL) describes recent advances in the field of scanning probe lithography, a high resolution patterning technique that uses a sharp tip in close proximity to a sample to pattern nanometer-scale features on the sample. SPL is capable of patterning sub-30nm features with nanometer-scale alignment registration. It is a relatively simple, inexpensive, reliable method for patterning nanometer-scale features on various substrates. It has potential applications for nanometer-scale research, for maskless semiconductor lithography, and for photomask patterning. The authors of this book have been key players in this exciting new field. Calvin Quate has been involved since the beginning in the early 1980s and leads the research time that is regarded as the foremost group in this field. Hyongsok Tom Soh and Kathryn Wilder Guarini have been the members of this group who, in the last few years, have brought about remarkable series of advances in SPM lithography. Some of these advances have been in the control of the tip which has allowed the scanning speed to be increased from mum/second to mm/second. Both non-contact and in-contact writing have been demonstrated as has controlled writing of sub-100 nm lines over large steps on the substrate surface. The engineering of a custom-designed MOSFET built into each microcantilever for individual current control is another notable achievement. Micromachined arrays of probes each with individual control have been demonstrated. One of the most intriguing new aspects is the use of directly-grown carbon nanotubes as robust, high-resolution emitters. In this book the authors concisely and authoritatively describe the historical context, the relevant inventions, and the prospects for eventual manufacturing use of this exciting new technology.

This monographdeals with metastable states in amorphoussemiconductors- ma- rials which lack long-range periodicity in the atoms' positions, which are in th- modynamic nonequilibrium and which, in addition, have several metastable states. Thesestates giverise tovariouspropertiesandeffects- namelya widerangeofp- toinduced changes and high photosensitivity and X-ray sensitivity - that are unique among solid-state semiconductors.Historically, amorphousselenium and seleni- based materials have played an important role in physics and technology, and they continue to do so. In these materials there exist inherent intermediate (metastable) states, structural and electronic in origin, which lead to interesting properties and effects different from those of their crystalline counterparts. In this volume, the metastable states and related effects are investigated in depth against the background of a detailed consideration of local atomic and electronic structure, and taking into account a wide range of light-induced effects. Although the rst publications on amorphous semiconductors date back to the early 1970s, studies of metastable states in these materials had not been analyzed systematically up to now, which led to erroneous ideas, even among specialists. In the present book, experimental investigations of metastable states are reported in detail for elemental selenium and selenium-based materials.

This book describes intuitive analog design approaches using digital inverters, providing filter architectures and circuit techniques enabling high performance analog circuit design. The authors provide process, supply voltage and temperature (PVT) variation-tolerant design techniques for inverter based circuits. They also discuss various analog design techniques for lower technology nodes and lower power supply, which can be used for designing high performance systems-on-chip.

This book discusses the effects, modeling, latest results, and nanotechnology applications of rainbows that appear during channeling of charged particles in crystals and nanotubes. The authors begin with a brief review of the optical and particle rainbow effects followed by a detailed description of crystal rainbows, which appear in ion channeling in crystals, and their modeling using catastrophe theory. The effects of spatial and angular focusing of channeled ions are described, with special attention given to the applications of the former effect to subatomic microscopy. The results of a thorough study of the recent high-resolution channeling experiments performed with protons of energies between 2.0 and 0.7 MeV and a 55 nm thick silicon crystal are also provided. This study opens up the potential for accurate analysis of very thin crystals. Also presented are recent results related to rainbows occurring in proton transmission through carbon nanotubes, and a detailed quantum consideration of the transmission of positrons of an energy of 1 MeV through very short carbon nanotubes. This process is determined by the rainbow effect. The initial positron beam is represented as an ensemble of non-interacting Gaussian wave packets, and the principal and supernumerary primary rainbows appearing in the spatial and angular distributions of transmitted positrons are clearly identified. They are explained by the effects of wrinkling, concentration and coordination of the wave packets.

Bringing Scanning Probe Microscopy Up to Speed introduces the principles of scanning probe systems with particular emphasis on techniques for increasing speed. The authors include useful information on the characteristics and limitations of current state-of-the-art machines as well as the properties of the systems that will follow in the future. The basic approach is two-fold. First, fast scanning systems for single probes are treated and, second, systems with multiple probes operating in parallel are presented. The key components of the SPM are the mechanical microcantilever with integrated tip and the systems used to measure its deflection. In essence, the entire apparatus is devoted to moving the tip over a surface with a well-controlled force. The mechanical response of the actuator that governs the force is of the utmost importance since it determines the scanning speed. The mechanical response relates directly to the size of the actuator; smaller is faster. Traditional scanning probe microscopes rely on piezoelectric tubes of centimeter size to move the probe. In future scanning probe systems, the large actuators will be replaced with cantilevers where the actuators are integrated on the beam. These will be combined in arrays of multiple cantilevers with MEMS as the key technology for the fabrication process.

Silicon technology has developed along virtually one single line: reducing the minimal size of lithographic features. But has this taken us to the point of diminishing returns? Are we now at a turning point in the logical evolution of microelectronics? Some believe that the semiconductor microelectronics industry has matured: the research game is over (comparisons with the steel industry are being made). Others believe that qualitative progress in hardware technology will come roaring back, based on innovative research. This debate, spirited as it is, is reflected in the pages of Future Trends in Microelectronics, where such questions are discussed. What kind of research does the silicon industry need to continue its expansion? What is the technical limit to shrinking Si devices? Is there any economic sense in pursuing this limit? What are the most attractive applications of optoelectronic hybrid systems? Are there any green pastures beyond the traditional semiconductor technologies? Identifying the scenario for the future evolution of microelectronics will present a tremendous opportunity for constructive action today.

An important real-world look at the status and future of integrated passives

This book provides an overview of the technology, potential applications, motivations, and problems associated with integrating resistors, capacitors, and inductors into circuit boards instead of mounting them as discrete components on the surface. Written primarily for engineers and scientists in industry who want to determine if passive integration is a viable option for a particular product, the text describes the processes available for designing and fabricating integrated passives, measuring their properties, and applying them to microelectronic systems.

In order to bring professionals up to date in this fast-moving technology and enable them to implement it into their own manufacturing environments, the editors address some basic questions concerning the tradeoffs between discrete and integrated approaches, including:

• What are the advantages and disadvantages of integrated passives?
• Is this processing compatible with existing substrates?
• Can integrated passives be made with conventional PWB fabrication equipment?
• How do the electrical characteristics of integrated passives differ from discretes?
• How are integrated passives designed?
• What must be considered in the economic analysis?

Integrated Passive Component Technology is the first book dedicated to this subject. A comprehensive survey of the state of the art, it will be an invaluable resource for engineers and materials scientists in the microelectronics industry. Interdisciplinary issues are presented in clearly delineated sections throughout the book so readers can pick those parts that are most beneficial to them.

Kalia and Fu's novel monograph covers cryogenic treatment, properties and applications of cryo-treated polymer materials. Written by numerous international experts, the twelve chapters in this book offer the reader a comprehensive picture of the latest findings and developments, as well as an outlook on the field. Cryogenic technology has seen remarkable progress in the past few years and especially cryogenic properties of polymers are attracting attention through new breakthroughs in space, superconducting, magnetic and electronic techniques. This book is a valuable resource for researchers, educators, engineers and graduate students in the field and at technical institutions.

Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.