The series Advances in Polymer Science presents critical reviews of the present and future trends in polymer and biopolymer science. It covers all areas of research in polymer and biopolymer science including chemistry, physical chemistry, physics, material science. The thematic volumes are addressed to scientists, whether at universities or in industry, who wish to keep abreast of the important advances in the covered topics. Advances in Polymer Science enjoys a longstanding tradition and good reputation in its community. Each volume is dedicated to a current topic, and each review critically surveys one aspect of that topic, to place it within the context of the volume. The volumes typically summarize the significant developments of the last 5 to 10 years and discuss them critically, presenting selected examples, explaining and illustrating the important principles, and bringing together many important references of primary literature. On that basis, future research directions in the area can be discussed. Advances in Polymer Science volumes thus are important references for every polymer scientist, as well as for other scientists interested in polymer science - as an introduction to a neighboring field, or as a compilation of detailed information for the specialist. Review articles for the individual volumes are invited by the volume editors. Single contributions can be specially commissioned. Readership: Polymer scientists, or scientists in related fields interested in polymer and biopolymer science, at universities or in industry, graduate students

Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectronic nanodevices, including quantum-cascade laser sources and detectors, few-electron/exciton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts. Content Level Research

The second edition of this introductory book sets out clearly and concisely the principles of operation of the semiconductor devices that lie at the heart of the microelectronic revolution.

The book aims to teach the reader how semiconductor devices are modelled. It begins by providing a firm background in the relevant semiconductor physics. These ideas are then used to construct both circuit models and mathematical models for diodes, bipolar transistors and MOSFETs. It also describes the processes involved in fabricating silicon chips containing these devices.

The first edition has already proved a highly useful textbook to first and second year degree students in electrical and electronic engineering, and related disciplines. It is also useful to HND students in similar subject areas, and as supplementary reading for anyone involved in integrated circuit design and fabrication.

The symposium "UV, Blue and Green Light Emission from
Semiconductor Materials" was part of the European Materials
Research Society (E-MRS) Spring Meeting in Strasbourg, 4-7 June,
1996 and it was arranged to bring together specialists in growth,
characterization and device fabrication of materials suitable for
visible and UV optoelectronic applications. Although the main
emphasis was on the development of semiconductor diode lasers,
work was also presented on the progress of frequently doubling
techniques which have an immediate application in commercial
systems. The proceedings are divided into Part I and Part II
reflecting the two streams of research based on II-VI
semiconductors on the one hand and III-V GaN based semiconductors
on the other hand. Although these two areas are competing
vigorously for the realization of practical blue laser diodes,
there are many common problems, particularly with doping and also
the need for suitable substrates for the growth of lattice
matched structures.

The invited talks were presented by
speakers from Japan, the USA and Europe with representation from
both University and Industrial research groups. In particular,
leaders in the development of blue lasers SONY (II-VI devices)
and Nichia (GaN devices) provided important device papers
alongside the excellent contributions on a wide range of topics
covering epitaxial growth, optical structural and electrical
measurements as well as problems of compensation of dopants and
laser lifetimes.

The symposium "Nonlinear Optical and
Optoelectronics Organic Materials" dealt with the development of
organic molecules and polymers as potential replacements for
existing materials in electronic, optoelectronics and nonlinear
optical devices.

The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.

A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding ofmeasurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.

This thesis deals with strongly luminescent lanthanide complexes having novel coordination structures. Luminescent lanthanide complexes are promising candidates as active materials for EL devices, lasers, and bio-sensing applications. The organic ligands in lanthanide complexes control geometrical and vibrational frequency structures that are closely related to the luminescent properties. In most of the previous work, however, lanthanide complexes have high-vibrational frequency C-H units close to the metal center for radiationless transition. In this thesis, the luminescent properties of lanthanide complexes with low-vibrational frequency C-F and P=O units are elucidated in terms of geometrical, vibrational, and chemical structures. The author also describes lanthanide coordination polymers with both high thermal stability (decomposition point > 300 DegreesC) and strong-luminescent properties (emission quantum yield > 80%). The author believes that novel studies on the characteristic structures and photophysical properties of lanthanide complexes may open up a frontier field in photophysical, coordination and material chemistry.

Adaptronic structures and systems are engineered to adjust automatically to variable operating and environmental conditions, through the use of feedback control. The authors of this book have taken on the task of comprehensively describing the current state of the art in this highly modern and broadly interdisciplinary field. The book presents selected examples of applications, and goes on to demonstrate current development trends.

This book contains more than the IEEE Standard 1149.4. It also contains the thoughts of those who developed the standard. Adam Osseiran has edited the original writings of Brian Wilkins, Colin Maunder, Rod Tulloss, Steve Sunter, Mani Soma, Keith Lofstrom and John McDermid, all of whom have personally contributed to this standard. To preserve the original spirit, only minor changes were made, and the reader will sense a chapter-to-chapter variation in the style of expression. This may appear awkward to some, although I found the Iack of monotonicity refreshing. A system consists of a specific organization of parts. The function of the system cannot be performed by an individual part or even a disorganized collection ofthe same parts. Testing has a system-like characteristic. Testing of a system does not follow directly from the testing of its parts, and a system built with testable parts can sometimes be impossible to test. Therefore, testability of the system must be organized. Some years ago, the IEEE published the boundary-scan Standard 1149.1. That Standard provided an architecture for digital VLSI chips. The chips designed with the 1149.1 architecture can be integrated into a testable system. However, many systems today contain both analog and digital chips. Even if all digital chips are compliant with the standard, the testability of a mixed-signal system cannot be guaranteed. The new Standard 1149.4, described in this book, extends the previous architecture to mixed-signal systems.

This book deals with basic aspects of polymer electronics and optoelectronics. There is an enormous world-wide effort both in basic scientific research as well as in industrial development in the area of organic electronics. It is becoming increasingly clear that, if devices based on organic materials are ever going to have a significant relevance beyond being a cheap replacement for inorganic semiconductors, there will be a need to understand interface formation, film growth and functionality. A control of these aspects will allow the realisation of totally new device concepts exploiting the enormous flexibility inherent in organic chemistry. In this book we focus on oligomeric/molecular films as we believe that the control of molecular structures and interfaces provides highly defined systems which allow, on the one hand the study of the basic physics and on the other hand to find the important parameters necessary to improve organic devices.

The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.

This thesis presents results crucial to the emerging field of indirect excitons. These specially designed quasiparticles give the unique opportunity to study fundamental properties of quantum degenerate Bose gases in semiconductors. Furthermore, indirect excitons allow for the creation of novel optoelectronic devices where excitons are used in place of electrons. Excitonic devices are explored for the development of advanced signal processing seamlessly coupled with optical communication. The thesis presents and describes the author's imaging experiments that led to the discovery of spin transport of excitons. The many firsts presented herein include the first studies of an excitonic conveyer, leading to the discovery of the dynamical localization-delocalization transition for excitons, and the first excitonic ramp and excitonic diode with no energy-dissipating voltage gradient.

Diluted magnetic semiconductors, or semimagnetic semiconductors, seemed for a while to be one of those research topics whose glory (i. e. , the period of most ext- sive research) belongedalready to the past. This particularlyapplied to "traditional" diluted magnetic semiconductors, i. e. , substitutional alloys of either II-VI or IV-VI semiconductors with transition metal ions. Fortunately, a discovery, in the beg- ning of the nineties [1,2], of ferromagnetic ordering in III-V DMSs with critical temperatures reaching 170 K has renewed and greatly intensi ed an interest in those materials. This was, at least partially, related to expectations that their Curie temperatures can be relatively easily brought to room temperature range through a clearly delineatedpath and,partially,due to the great successes, also commercial,of metallic version of spintronics, which earned its founders the Nobel Prize in 2007. The semiconductor version of spintronics has attracted researchers also because of hopes to engage it in efforts to construct quantum information processing devices. While these hopes and expectations are not fully realized yet, the effort is going on. As a goodexampleof recentachievements,new resultson quantumdotsconta- ing a single magnetic ion should be mentioned. A great progress has been achieved in studies of excitonic states in such quantum dots, so far limited to InAs/GaAs [3,4] and CdTe/ZnTe [5,6] material systems and to Manganese as the magnetic ion. Furthermore, in the II-VI QDs, rst results on the optical control of the Mn spin states havebeenexperimentallydemonstrated[7-9]andtheoreticallyanalyzed[10]; the studies of Mn spin dynamics and control in III-V QDs will certainly follow.

219 8. 2 Sensors 221 8. 3 Physical Sensors 222 8. 3. 1 Electrical Sensing Means 223 8. 3. 2 Magnetic Field Methods 231 8. 3. 3 Optical Methods 232 8. 4 Chemical Sensors 241 8. 4. 1 Electrical Gas and Chemical Sensors 243 8. 4. 2 Guided-Optics Intrinsic Chemical Sensors 246 8. 4. 3 Extrinsic Chemical Sensors 250 8. 4. 4 Polymer Waveguide Chemical Sensors 251 8. 4. 5 Surface Plasmon Chemical Sensors 252 8. 4. 6 Indicator-Mediated Extrinsic Sensing 253 8. 4. 7 Optical Biosensors 256 8. 4. 8 Ultrasonic Gas and Chemical Sensors 257 8. 4. 9 Intelligent Sensors 258 8. 5 Connections/Links and Wiring 258 8. 5. 1 Optical Links 260 8. 5. 2 Requirement on the Processing Unit/Intelligence 262 8. 6 Actuators 263 8. 7 Signal Processing/Computing 264 8. 7. 1 Implicit Computation 266 8. 7. 2 Explicit Computation 267 8. 8 References 274 Subject Index 279 Micro-Actuators (Electrical, Magnetic, Thermal, Optical, Mechanical, and Chemical) It has become quite apparent that sensors and actuators are the main bottleneck of the modem information processing and control systems. Microprocessors and computers used to be the main limiting element in most information processing systems. But thanks to the enonnous progress in the microelectronics industry, most information analysis tasks can be processed in real time. The data has to be acquired by the processor in some form and processed and used to produce some useful function in the real world.

It is expected that the use of soft computing will increase greatly in industrial applications, because the conceptual structure of hard computing is much too precise in relation to the great imprecision of the world around us. This book aims at attracting researchers and engineers both in the fields of industrial electronics (IE) and computational intelligence (CI). By approaching the different viewpoints of IE and CI people, it is hoped to provide practicing engineers with new solutions to the demanding real-world problems. The applications are divided into two categories, Electric Power Applications and Emerging Applications.

The discovery by J. G. Bednorz and K. A. Mtllier in 1986 that the superconducting state can exist in oxides at temperatures above 30 K stimulated research in the field of superconductivity and opened up a new field of research. Within a few years a large number of cuprate superconductors with transition temperatures well above the boiling point of liquid nitrogen have been found. The possibility of using liquid nitrogen as coolant re-stimulated interest in power applications of supercon ductivity. In this book an overview of the known high-Te superconductors and their physical properties is presented. Aspects related to conductor fabrication and high-current applications are emphasised. The material should be suitable for use in graduate level courses on superconductivity. Researchers in the field may profit from the large number of tables and references describing its status at the end of 1997. An introduction to high-To superconductivity must be based on the fundamental physical principles of normal-state electrical conductivity and the well-known characteristics of conventional superconductors. In Chapter 2 this background is provided. Crystal structures, anisotropic properties and general trends of the critical temperatures of the cuprate superconductors are described in Chapters 3 and 4. The processing of superconductor powders addressed in Chapter 5 affects considerably the current-carrying capacity of high-T. wires. In Chapter 6 several fabrication techniques for superconducting wires are described. In addition, the factors limiting the transport critical currents ofhigh-Te wires are discussed."

This book presents selected papers from the fourth edition of the GraphX conference series, GraphITA 2015. Its content range from fundamentals to applications of graphene and other 2D material such as silicene, BN and MoS2. The newest technological challenges in the field are described in this book, written by worldwide known scientists working with 2D materials.The chapter 'Morphing Graphene-Based Systems for Applications: Perspectives from Simulations' is published open access under a CC BY 4.0 license.

Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.

This book systematically discusses the modeling and application of transfer manipulation for flexible electronics packaging, presenting multiple processes according to the geometric sizes of the chips and devices as well as the detailed modeling and computation steps for each process. It also illustrates the experimental design of the equipment to help readers easily learn how to use it. This book is a valuable resource for scholars and graduate students in the research field of microelectronics.

The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:

• Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
• Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
• Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.

Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring.

The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.

The 2008 Spring Meeting of the Arbeitskreis Festkorperphysik was held in Berlin, Germany, between February 24 and February 29, 2008 in conjunction with the 72nd Annual Meeting of the Deutsche Physikalische Gesellschaft. The 2008 meeting was the largest physics meeting in Europe and among the largest physics meetings in the world in 2008."

Thanks to the advance of semiconductor and communication technology, the wireless communication market has been booming in the last two decades. It evolved from simple pagers to emerging third-generation (3G) cellular phones. In the meanwhile, broadband communication market has also gained a rapid growth. As the market always demands hi- performance and low-cost products, circuit designers are seeking hi- integration communication devices in cheap CMOS technology. The phase-locked loop frequency synthesizer is a critical component in communication devices. It works as a local oscillator for frequency translation and channel selection in wireless transceivers and broadband cable tuners. It also plays an important role as the clock synthesizer for data converters in the analog-and-digital signal interface. This book covers the design and analysis of PLL synthesizers. It includes both fundamentals and a review of the state-of-the-art techniques. The transient analysis of the third-order charge-pump PLL reveals its locking behavior accurately. The behavioral-level simulation of PLL further clarifies its stability limit. Design examples are given to clearly illustrate the design procedure of PLL synthesizers. A complete derivation of reference spurs in the charge-pump PLL is also presented in this book. The in-depth investigation of the digital CA modulator for fractional-N synthesizers provides insightful design guidelines for this important block.

Ambient intelligence is the vision of a technology that will become invisibly embedded in our natural surroundings, present whenever we need it, enabled by simple and effortless interactions, attuned to all our senses, adaptive to users and context-sensitive, and autonomous. High-quality information access and personalized content must be available to everybody, anywhere, and at any time. This book addresses ambient intelligence used to support human contacts and accompany an individual's path through the complicated modern world. From the technical standpoint, distributed electronic intelligence is addressed as hardware vanishing into the background. Devices used for ambient intelligence are small, low-power, low weight, and (very importantly) low-cost; they collaborate or interact with each other; and they are redundant and error-tolerant. This means that the failure of one device will not cause failure of the whole system. Since wired connections often do not exist, radio methods will play an important role for data transfer. This book addresses various aspects of ambient intelligence, from applications that are imminent since they use essentially existing technologies, to ambitious ideas whose realization is still far away, due to major unsolved technical challenges.