In the last few decades the effect of lead contamination on human health has received significant attention. Based on such concerns elimination of lead from ceramic glaze, paint, plumbing etc. has been legislated and implemented. However, till recently, solders used in electronics, remained lead-based. The worldwide multi-faceted research efforts to arrive at suitable solutions, especially as the deadline for implementation of lead-free electronic solders approaches, have resulted in an exhaustive number of research papers in several reviewed scientific journals. Similarly there have been presentations in several national and international meetings of various technical societies. It is impossible for any researcher or student to be aware of all the materials that have been, and are being, published in these many different sources, so it becomes essential to have most of the relevant and currently available information presented in a single publication. electronic solder area were identified, and researchers recognized for their significant scientific contributions in those areas were invited to write articles on those topics. They were asked to address the importance of a given issue, the current status of understanding and available solutions, the problems that still need to be tackled and suggestions for potential approaches to do so. The chapters are organized around the following subject areas: thermodynamics and phase diagrams, solder developments, processing issues, mechanical property considerations, effects of thermal excursions (TMF), electromigraion, whisker growth, tin pest, and industrial perspectives (consumer electronics, and high-end high reliability applications). This material originally appeared in a special issue of Journal of Materials Science: Materials in Electronics. for academic researchers in fields other than Materials Science and those in industry, and to provide wider awareness of the current status of lead-free electronic solders to those persons active in the area but who are not regular readers of the Journal, these articles are being reprinted in book form.

This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

This book discusses topics related to power electronics, especially electromagnetic transient analysis and control of high-power electronics conversion. It focuses on the re-evaluation of power electronics, transient analysis and modeling, device-based system-safe operating area, and energy balance-based control methods, and presenting, for the first time, numerous experimental results for the transient process of various real-world converters. The book systematically presents both theoretical analysis and practical applications. The first chapter discusses the structure and attributes of power electronics systems, highlighting the analysis and synthesis, while the second chapter explores the transient process and modeling for power electronics systems. The transient features of power devices at switching-on/off, transient conversion circuit with stray parameters and device-based system-safe operating area are described in the subsequent three chapters. The book also examines the measurement of transient processes, electromagnetic pulses and their series, as well as high-performance, closed-loop control, and expounds the basic principles and method of the energy-balanced control strategy. Lastly, it introduces the applications of transient analysis of typical power electronics systems. The book is valuable as a textbook for college students, and as a reference resource for electrical engineers as well as anyone working in the field of high-power electronics system.

This book brings together the many concepts and discoveries in liquid crystal colloids contributed over the last twenty years and scattered across numerous articles and book chapters. It provides both a historical overview of the development of the field and a clear perspective on the future applications in photonics. The book covers all phenomena observed in liquid crystal colloids with an emphasis on experimental tools and applications of topology in condensed matter, as well as practical micro-photonics applications. It includes a number of spectacular manifestations of new topological phenomena not found or difficult to observe in other systems. Starting from the early works on nematic colloids, it explains the basics of topological defects in ordered media, charge and winding, and the elastic forces between colloidal particles in nematics. Following a detailed description of experimental methods, such as optical tweezing and particle tracking, the book eases the reader into the theoretical part, which deals with elastic deformation of nematic liquid crystals due to inclusions and surface alignment. This is discussed in the context of basic mean field Landau-de Gennes Q-tensor theory, with a brief explanation of the free-energy minimization numerical methods. There then follows an excursion into the topology of complex nematic colloidal structures, colloidal entanglement, knotting and linking. Nematic droplets, shells, handlebodies and chiral topological structures are addressed in separate chapters. The book concludes with an extensive chapter on the photonic properties of nematic dispersions, presenting the concept of integrated soft matter photonics and discussing the concepts of nematic and chiral nematic microlasers, surface-sensitive photonic devices and smectic microfibers. The text is complemented by a large bibliography, explanatory sketches and beautiful micrographs.

An outstanding feature of this book is a collection of state-of-the-art reviews written by leading researchers in the nanomechanics of carbon nanotubes, nanocrystalline materials, biomechanics and polymer nanocomposites. The structure and properties of carbon nanotubes, polycrystalline metals, and coatings are discussed in great details. The book is an exceptional resource on multi-scale modelling of metals, nanocomposites, MEMS materials and biomedical applications. An extensive bibliography concerning all these topics is included. Highlights on bio-materials, MEMS, and the latest multi-scale methods (e.g., molecular dynamics and Monte Carlo) are presented. Numerous illustrations of inter-atomic potentials, nanotube deformation and fracture, grain rotation and growth in solids, ceramic coating structures, blood flows and cell adhesion are discussed.
This book provides a comprehensive review of latest developments in the analysis of mechanical phenomena in nanotechnology and bio-nanotechnology.

"Fundamentals of Nanoscaled Field Effect Transistors" gives comprehensive coverage of thefundamental physical principles and theory behind nanoscale transistors.The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling," has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore's Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore's law and each dif?culty has found a solution.

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. "Physics and Technology of Dilute III-V Nitride Semiconductors and Novel Dilute Nitride Material Systems" reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

This text focuses on techniques for minimizing power dissipation during test application at logic and register-transfer levels of abstraction of the VLSI design flow. It surveys existing techniques and presents several test automation techniques for reducing power in scan-based sequential circuits and BIST data paths.

BSIM-Bulk Mosfet Model for Wireless and Mixed-Mode ICs provides in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures, addressing geometrical scaling, temperatures, and more. There is also a dedicated chapter on extensive quality testing procedures and experimental results. This book discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia. Those working in the semiconductor industry often run into a variety of problems like model non-convergence or non-physical simulation results. This is largely due to a limited understanding of the internal operations of the model as literature and technical manuals are insufficient. This also creates huge difficulty in developing their own IP models. Similarly, circuit designers and researcher across the globe need to know new features available to them so that the circuits can be more efficiently designed.

Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

Topological defects are generic in continuous media. In the relativistic quantum vacuum they are known as cosmic strings, in superconductors as quantized flux lines, and in superfluids, low-density atomic Bose-Einstein condensates and neutron stars as quantized vortex lines. This collection of articles by leading scientists presents a modern treatment of the physics of vortex matter, mainly applied to unconventional superconductors and superfluids but with extensions to other areas of physics.

This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.

Processor Design provides insight into a number of different flavors of processor architectures and their design, software tool generation, implementation, and verification. After a brief introduction to processor architectures and how processor designers have sometimes failed to deliver what was expected, the authors introduce a generic flow for embedded on-chip processor design and start to explore the vast design space of on-chip processing. The types of processor cores covered include general purpose RISC cores, traditional DSP, a VLIW approach to signal processing, processor cores that can be customized for specific applications, reconfigurable processors, protocol processors, Java engines, and stream processors. Co-processor and multi-core design approaches that deliver application-specific performance over and above that which is available from single-core designs are also described.

In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.

This book is mostly concerned on the experimental research of the nonlinear optical characteristics of various media, low- and high-order harmonic generation in different materials, and formation, and nonlinear optical characterization of clusters. We also demonstrate the inter-connection between these areas of nonlinear optics.
Nonlinear optical properties of media such as optical limiting can be applied in various areas of science and technology. To define suitable materials for these applications, one has to carefully analyse the nonlinear optical characteristics of various media, such as the nonlinear refractive indices, coefficients of nonlinear absorption, saturation absorption intensities, etc. Knowing the nonlinear optical parameters of materials is also important for describing the propagation effects, self-interaction of intense laser pulses, and optimisation of various nonlinear optical processes. Among those processes one can admit the importance of the studies of the frequency conversion of coherent laser sources. The area of interest for nonlinear optical characterization of materials is also closely related with new field of nanostructures formation and application during laser-matter interaction.
We show how the nonlinear optical analysis of materials leads to improvement of their high-order nonlinear optical response during the interaction with strong laser fields. Ablation-induced nanoparticles formation is correlated with their applications as efficient sources of coherent short-wavelength photons. From other side, recent achievements of harmonic generation in plasmas are closely related with the knowledge of the properties of materials in the laser plumes. All of these studies are concerned with the low-order nonlinear optical features of various materials. The novelty of the approach developed in present book is related with inter-connection of those studies with each other."

The goal of putting systems on a chip' has been a difficult challenge that is only recently being met. Since the world is analog', putting systems on a chip requires putting analog interfaces on the same chip as digital processing functions. Since some processing functions are accomplished more efficiently in analog circuitry, chips with a large amount of analog and digital circuitry are being designed. Whether a small amount of analog circuitry is combined with varying amounts of digital circuitry or the other way around, the problem encountered in marrying analog and digital circuitry are the same but with different scope. Some of the most prevalent problems are chip/package capacitive and inductive coupling, ringing on the RLC tuned circuits that form the chip/package power supply rails and off-chip drivers and receivers, coupling between circuits through the chip substrate bulk, and radiated emissions from the chip/package interconnects. To aggravate the problems of designers who have to deal with the complexity of mixed-signal coupling there is a lack of verification techniques to simulate the problem. In addition to considering RLC models for the various chip/package/board level parasitics, mixed-signal circuit designers must also model coupling through the common substrate when simulating ICs to obtain an accurate estimate of coupled noise in their designs. Unfortunately, accurate simulation of substrate coupling has only recently begun to receive attention, and techniques for the same are not widely known. Simulation Techniques and Solutions for Mixed-Signal Coupling in Integrated Circuits addresses two major issues of the mixed-signal coupling problem -- how to simulate it and how to overcome it. It identifies some of the problems that will be encountered, gives examples of actual hardware experiences, offers simulation techniques, and suggests possible solutions. Readers of this book should come away with a clear directive to simulate their design for interactions prior to building the design, versus a build it and see' mentality.

Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field. Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

"Nanostructure Semiconductor Optical Amplifiers" reviews all-optical processing methods currently available and presents semiconductor optical amplifiers (SOAs) as a new building block for this purpose. The authors discuss the overcomes of high frequency operation of SOAs and propose a new all-optical pumping method for the implementation of semiconductor optical amplifiers. Content Level Research

Electronics has become the largest industry, surpassing agriculture, auto, and heavy metal industries. It has become the industry of choice for a country to prosper, already having given rise to the phenomenal prosperity of Japan, Korea, Singapore, Hong Kong, and Ireland among others. At the current growth rate, total worldwide semiconductor sales will reach $300B by the year 2000. The key electronic technologies responsible for the growth of the industry include semiconductors, the packaging of semiconductors for systems use in auto, telecom, computer, consumer, aerospace, and medical industries, displays, magnetic, and optical storage as well as software and system technologies. There has been a paradigm shift, however, in these technologies, from mainframe and supercomputer applications at any cost, to consumer applications at approximately one-tenth the cost and size. Personal computers are a good example, going from $500IMIP when products were first introduced in 1981, to a projected $IIMIP within 10 years. Thin, light portable, user friendly and very low-cost are, therefore, the attributes of tomorrow's computing and communications systems. Electronic packaging is defined as interconnection, powering, cool ing, and protecting semiconductor chips for reliable systems. It is a key enabling technology achieving the requirements for reducing the size and cost at the system and product level."

This guide emphasizes jitter for time domain applications so that there is not a need to translate from frequency domain. This provides a more direct path to the results for designing in an application area where performance is specified in the time domain. The book includes classification of oscillator types and an exhaustive guide to existing research literature. It also includes classification of measurement techniques to help designers understand how the eventual performance of circuit design is verified.

This is a unique book devoted to the important class of nitride semiconductors and devices. Numerous tables and figures detailing properties and performance devices are compiled. Structural, electrical and optical properties of nitrides and substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies (contacts), dopant incorporation and analyses, pn-junctions, light-emitting diodes, and blue lasers are treated succinctly. Attention is paid to both technological issues and fundamentals.

This book provides a comprehensive overview of the main electrical technologies for process heating, which tend to be treated separately in specialized books. Individual chapters focus on heat transfer, electromagnetic fields in electro-technologies, arc furnaces, resistance furnaces, direct resistance heating, induction heating, and high-frequency and microwave heating. The author highlights those topics of greatest relevance to a wide-ranging teaching program, and at the same time offer a detailed review of the main applications of the various technologies. The content represents a synthesis of the extensive knowledge and experience that the author has accumulated while researching and teaching at the University of Padua's Engineering Faculty. This text on industrial electroheating technologies is a valuable resource not only for students of industrial, electrical, chemical, and material science engineering, but also for engineers, technicians and others involved in the application of electroheating and energy-efficient industrial processes.