Presents the first comprehensive book on electronics for vinyl High-level, practical information with minimal mathematics Includes topics such as low-noise amplification, proper cartridge loading, equalisation for archival recordings, and more Includes tricks and innovations from an expert author

This book is an introduction to a rapidly developing field of modern theoretical physics - the theory of quantum transport at nanoscale. The theoretical methods considered in the book are in the basis of our understanding of charge, spin and heat transport in nanostructures and nanostructured materials and are widely used in nanoelectronics, molecular electronics, spin-dependent electronics (spintronics) and bio-electronics. The book is based on lectures for graduate and post-graduate students at the University of Regensburg and the Technische Universitat Dresden (TU Dresden). The first part is devoted to the basic concepts of quantum transport: Landauer-Buttiker method and matrix Green function formalism for coherent transport, Tunneling (Transfer) Hamiltonian and master equation methods for tunneling, Coulomb blockade, vibrons and polarons. The results in this part are obtained as possible without sophisticated techniques, such as nonequilibrium Green functions, which are considered in detail in the second part. A general introduction into the nonequilibrium Green function theory is given. The approach based on the equation-of-motion technique, as well as more sophisticated one based on the Dyson-Keldysh diagrammatic technique are presented. The main attention is paid to the theoretical methods able to describe the nonequilibrium (at finite voltage) electron transport through interacting nanosystems, specifically the correlation effects due to electron-electron and electron-vibron interactions.

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today's most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy ("become hot"), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

This thesis details the significant progress made in improving the performance of organic transistors and the network conductivity of carbon nanotubes. The first section investigates organic semiconductor nucleation and growth on the most common dielectric surface used to fabricate organic thin film transistors. The nucleation and growth of the semiconductor was determined to be a critical factor affecting the device performance. Excellent dielectric modification layers, which promote desirable semiconductor growth leading to high conductivity were identified, and a technologically relevant deposition technique was developed to fabricate high quality dielectric modification layers over large areas. This may represent an important step towards the realization of large area organic circuity. In the final section, lessons learned from studying organic semiconductor nucleation and growth were utilized to improve the conductivity of carbon nanotube networks. Selective nucleation of materials at the junctions between nanotubes in the network significantly decreased the network's sheet resistance. The resulting networks may be promising candidates for transparent electrodes with a variety of optoelectronic applications.

Authored by many of the world's leading experts on high-Tc superconductivity, this volume presents a panorama of ongoing research in the field, as well as insights into related multifunctional materials. The contributions cover many different and complementary aspects of the physics and materials challenges, with an emphasis on superconducting materials that have emerged since the discovery of the cuprate superconductors, for example pnictides, MgB2, H2S and other hydrides. Special attention is also paid to interface superconductivity. In addition to superconductors, the volume also addresses materials related to polar and multifunctional ground states, another class of materials that owes its discovery to Prof. Muller's ground-breaking research on SrTiO3.

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

This book is the result of the extensive experience the authors gained through their year-long occupation at the Faculty of Electrical Engineering at the University of Banja Luka. Starting at the fundamental basics of electrical engineering, the book guides the reader into this field and covers all the relevant types of converters and regulators. Understanding is enhanced by the given examples, exercises and solutions. Thus this book can be used as a textbook for students, for self-study or as a reference book for professionals.

This book describes new trends in the nanoscience of isotopic materials science. Assuming a background in graduate condensed matter physics and covering the fundamental aspects of isotopic materials science from the very beginning, it equips readers to engage in high-level professional research in this area. The books main objective is to provide insight into the question of why solids are the way they are, either because of how their atoms are bonded with one another, because of defects in their structure, or because of how they are produced or processed. Accordingly, it explores the science of how atoms interact, connects the results to real materials properties, and demonstrates the engineering concepts that can be used to produce or improve semiconductors by design. In addition, it shows how the concepts discussed are applied in the laboratory. The book addresses the needs of researchers, graduate students and senior undergraduate students alike. Although primarily written for materials science audience, it will be equally useful to those teaching in electrical engineering, materials science or even chemical engineering or physics curricula. In order to maintain the focus on materials concepts, however, the book does not burden the reader with details of many of the derivations and equations nor does it delve into the details of electrical engineering topics.

This book covers many advances in the subjects of nano-optics and nano photonics. The author describes the principle and technical schematics of common methods for breaking through the optical diffraction limit and focuses on realizing optical super-resolution with nonlinear effects of thin film materials. The applications of nonlinear optical super-resolution effects in nano-data storage, nanolithography, and nano-imaging are also presented. This book is useful to graduate students majoring in optics and nano science and also serves as a reference book for academic researchers, engineers, technical professionals in the fields of super-resolution optics and laser techniques, nano-optics and nano photonics, nano-data storage, nano imaging, micro/nanofabrication and nanolithography and nonlinear optics.

2D Materials for Infrared and Terahertz Detectors provides an overview of the performance of emerging detector materials, while also offering, for the first time, a comparison with traditional materials used in the fabrication of infrared and terahertz detectors. Since the discovery of graphene, its applications to electronic and optoelectronic devices have been intensively researched. The extraordinary electronic and optical properties allow graphene and other 2D materials to be promising candidates for infrared (IR) and terahertz (THz) photodetectors, and yet it appears that the development of new detectors using these materials is still secondary to those using traditional materials. This book explores this phenomenon, as well as the advantages and disadvantages of using 2D materials. Special attention is directed toward the identification of the most-effective hybrid 2D materials in infrared and terahertz detectors, as well as future trends. Written by one of the world's leading researchers in the field of IR optoelectronics, this book will be a must-read for researchers and graduate students in photodetectors and related fields. Features * Offers a comprehensive overview of the different types of 2D materials used in fabrication of IR and THz detectors, and includes their advantages/disadvantages * The first book to compare new detectors to a wide family of common, commercially available detectors that use traditional materials.

Less than a decade ago, lead halide perovskite semiconductors caused a sensation: Solar cells exhibiting astonishingly high levels of efficiency. Recently, it became possible to synthesize nanocrystals of this material as well. Interestingly; simply by controlling the size and shape of these crystals, new aspects of this material literally came to light. These nanocrystals have proven to be interesting candidates for light emission. In this thesis, the recombination, dephasing and diffusion of excitons in perovskite nanocrystals is investigated using time-resolved spectroscopy. All these dynamic processes have a direct impact on the light-emitting device performance from a technology point of view. However, most importantly, the insights gained from the measurements allowed the author to modify the nanocrystals such that they emitted with an unprecedented quantum yield in the blue spectral range, resulting in the successful implementation of this material as the active layer in an LED. This represents a technological breakthrough, because efficient perovskite light emitters in this wavelength range did not exist before.

Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400 DegreesC), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition. The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology.

System-on-a-Chip (SOC) integrated circuits composed of embedded cores are now commonplace. Nevertheless, there remain several roadblocks to rapid and efficient system integration. Test development is seen as a major bottleneck in SOC design and manufacturing capabilities. Testing SOCs is especially challenging in the absence of standardized test structures, test automation tools, and test protocols. In addition, long interconnects, high density, and high-speed designs lead to new types of faults involving crosstalk and signal integrity.

SOC (System-on-a-Chip) Testing for Plug and Play Test Automation is an edited work containing thirteen contributions that address various aspects of SOC testing.

SOC (System-on-a-Chip) Testing for Plug and Play Test Automation is a valuable reference for researchers and students interested in various aspects of SOC testing.

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.

Kinetic Studies in GeO2/Ge System: A Retrospective from 2021 investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices. This book first reviews the development of MOS technology and discusses the potentials of emerging Ge and the challenges facing it as a contentious channel material, once promising to replace Si (silicon) for advanced nodes. The study systematically analyzes the following aspects of GeO2/Ge stacks that will shed light on the characteristics and reaction principles of the system: GeO2/Ge degradation, Ge passivation techniques, desorption kinetics of GeO from GeO2/Ge, the relationship between GeO2 crystallization and GeO2/Ge interface reaction, and the oxidation kinetics of Ge. Based on findings from the intrinsic properties of GeO2/Ge, the author also compares it with prevalent SiO2/Si systems and demonstrates the essential differences between the two, contributing to quality control, process optimization, and technology advancements of GeO2/Ge. The book will be a useful reference for researchers, professionals, and students interested in electronic materials, condenser matter physics, microelectronic engineering, and semiconductors.

* Guides readers into more detailed and technical treatments of readout optical signals * Gives a broad overview of optical signal detection including terahertz region and two-dimensional material * Helps readers further their studies by offering chapter-end problems and recommended reading.

Fast and Effective Embedded Systems Design is a fast-moving introduction to embedded systems design, applying the innovative ARM mbed and its web-based development environment. Each chapter introduces a major topic in embedded systems, and proceeds as a series of practical experiments, adopting a "learning through doing" strategy. Minimal background knowledge is needed to start. C/C++ programming is applied, with a step-by-step approach which allows you to get coding quickly. Once the basics are covered, the book progresses to some "hot" embedded issues - intelligent instrumentation, wireless and networked systems, digital audio and digital signal processing. In this new edition all examples and peripheral devices are updated to use the most recent libraries and peripheral devices, with increased technical depth, and introduction of the "mbed enabled" concept. Written by two experts in the field, this book reflects on the experimental results, develops and matches theory to practice, evaluates the strengths and weaknesses of the technology and techniques introduced, and considers applications in a wider context. New Chapters on: Bluetooth and ZigBee communication Internet communication and control, setting the scene for the 'Internet of Things' Digital Audio, with high-fidelity applications and use of the I2S bus Power supply, and very low power applications The development process of moving from prototyping to small-scale or mass manufacture, with a commercial case study.

This highly interdisciplinary thesis reports on two innovative photonic biosensors that combine multiple simultaneous measurements to provide unique insights into the activity and structure of surface immobilized biological molecules. In addition, it presents a new silicon photonic biosensor that exploits two cascaded resonant sensors to provide two independent measurements of a biological layer immobilized on the surface. By combining these two measurements, it is possible to unambiguously quantify the density and thickness of the molecular layer; here, the approach's ability to study molecular conformation and conformational changes in real time is demonstrated. The electrophotonic biosensor integrates silicon photonics with electrochemistry into a single technology. This multi-modal biosensor provides a number of unique capabilities that extend the functionality of conventional silicon photonics. For example, by combining the complementary information revealed by simultaneous electrochemical and photonic measurements, it is possible to provide unique insights into on-surface electrochemical processes. Furthermore, the ability to create electrochemical reactions directly on the silicon surface provides a novel approach for engineering the chemical functionality of the photonic sensors. The electrophotonic biosensor thus represents a critical advance towards the development of very high-density photonic sensor arrays for multiplexed diagnostics.

Silicon photonics uses chip-making techniques to fabricate photonic circuits. The emerging technology is coming to market at a time of momentous change. The need of the Internet content providers to keep scaling their data centers is becoming increasing challenging, the chip industry is facing a future without Moore's law, while telcos must contend with a looming capacity crunch due to continual traffic growth. Each of these developments is significant in its own right. Collectively, they require new thinking in the design of chips, optical components, and systems. Such change also signals new business opportunities and disruption. Notwithstanding challenges, silicon photonics' emergence is timely because it is the future of several industries. For the optical industry, the technology will allow designs to be tackled in new ways. For the chip industry, silicon photonics will become the way of scaling post-Moore's law. New system architectures enabled by silicon photonics will improve large-scale computing and optical communications. Silicon Photonics: Fueling the Next Information Revolution outlines the history and status of silicon photonics. The book discusses the trends driving the datacom and telecom industries, the main but not the only markets for silicon photonics. In particular, developments in optical transport and the data center are discussed as are the challenges. The book details the many roles silicon photonics will play, from wide area networks down to the chip level. Silicon photonics is set to change the optical components and chip industries; this book explains how.

Transformation electromagnetics is a systematic design technique for optical and electromagnetic devices that enables novel wave-material interaction properties. The associated metamaterials technology for designing and realizing optical and electromagnetic devices can control the behavior of light and electromagnetic waves in ways that have not been conventionally possible. The technique is credited with numerous novel device designs, most notably the invisibility cloaks, perfect lenses and a host of other remarkable devices. Transformation Electromagnetics and Metamaterials: Fundamental Principles and Applications presents a comprehensive treatment of the rapidly growing area of transformation electromagnetics and related metamaterial technology with contributions on the subject provided by a collection of leading experts from around the world. On the theoretical side, the following questions will be addressed: "Where does transformation electromagnetics come from?," "What are the general material properties for different classes of coordinate transformations?," "What are the limitations and challenges of device realizations?," and "What theoretical tools are available to make the coordinate transformation-based designs more amenable to fabrication using currently available techniques?" The comprehensive theoretical treatment will be complemented by device designs and/or realizations in various frequency regimes and applications including acoustic, radio frequency, terahertz, infrared, and the visible spectrum. The applications encompass invisibility cloaks, gradient-index lenses in the microwave and optical regimes, negative-index superlenses for sub-wavelength resolution focusing, flat lenses that produce highly collimated beams from an embedded antenna or optical source, beam concentrators, polarization rotators and splitters, perfect electromagnetic absorbers, and many others. This book will serve as the authoritative reference for students and researchers alike to the fast-evolving and exciting research area of transformation electromagnetics/optics, its application to the design of revolutionary new devices, and their associated metamaterial realizations.

This book presents the real challenges and experiences of managing an advanced semiconductor technology development and integration program - but using a novelized form. The material is presented in a conversational format through a story that follows a fictional narrator as she grows from an intern to a manager in a (fictional) chip company. The story describes the technology development program from management, engineering and human perspectives, and exposes not only the management and technical issues but also the typical work-life balance challenges experienced by engineers working in the technology industry. Use of a series of realistic and representative vignettes, supported by a set of illustrative cartoon-ish panels, presents the serious management topics in a light and readable way.

The Designer's Guide to the Cortex-M Microcontrollers gives you an easy-to-understand introduction to the concepts required to develop programs in C with a Cortex-M based microcontroller. The book begins with an overview of the Cortex-M family, giving architectural descriptions supported with practical examples, enabling you to easily develop basic C programs to run on the Cortex-M0/M0+/M3 and M4 and M7. It then examines the more advanced features of the Cortex architecture such as memory protection, operating modes, and dual stack operation. Once a firm grounding in the Cortex-M processor has been established the book introduces the use of a small footprint RTOS and the CMSIS-DSP library. The book also examines techniques for software testing and code reuse specific to Cortex-M microcontrollers. With this book you will learn: the key differences between the Cortex-M0/M0+/M3 and M4 and M7; how to write C programs to run on Cortex-M based processors; how to make the best use of the CoreSight debug system; the Cortex-M operating modes and memory protection; advanced software techniques that can be used on Cortex-M microcontrollers; how to use a Real Time Operating System with Cortex-M devices; how to optimize DSP code for the Cortex-M4; and how to build real time DSP systems.

Covers novel semiconductor devices with sub-micron dimensions. Discusses comprehensive device optimization techniques. Examines the conceptualization and modeling of semiconductor devices. Covers circuit and sensor-based application of the novel devices. Discusses novel materials for next-generation devices.