In spite of the increasing importance of microcavities, device physics or the observable phenomena in optical microcavities such as enhanced or inhibited spontaneous emission and its relation with the laser oscillation has not been systematically well-described-until now. Spontaneous Emission and Laser Oscillation in Microcavities presents the basics of optical microcavities. The volume is divided into ten chapters, each written by respected authorities in their areas. The book surveys several methods describing free space spontaneous emission and discusses changes in the feature due to the presence of a cavity. The effect of dephasing of vacuum fields on spontaneous emission in a microcavity and the effects of atomic broadening on spontaneous emission in an optical microcavity are examined. The book details the splitting in transmission peaks of planar microcavities containing semiconductor quantum wells. A simple but useful way to consider the change in the spontaneous emission rate from the viewpoint of mode density alteration by wavelength-sized cavities is provided. Authors also discuss the spontaneous emission in dielectric planar microcavities. Spontaneous emission in microcavity surface emitting lasers is covered, as are the effects of electron confinement in semiconductor quantum wells, wires, and boxes also given. The volume extends the controlling spontaneous emission phenomenon to laser oscillation. Starting from the Fermi golden rule, the microcavity laser rate equations are derived, and the oscillation characteristics are analyzed. Recent progress in optical microcavity experiments is summarized, and the applicability in massively optical parallel processing systems and demands for the device performance are explored. This volume is extremely useful as a textbook for graduate and postgraduate students and works well as a unique reference for researchers beginning to study in the field.

This thesis presents analytical theoretical studies on the interplay between charge density waves (CDW) and superconductivity (SC) in the actively studied transition-metal dichalcogenide 1T-TiSe2. It begins by reapproaching a years-long debate over the nature of the phase transition to the commensurate CDW (CCDW) state and the role played by the intrinsic tendency towards excitonic condensation in this system. A Ginzburg-Landau phenomenological theory was subsequently developed to understand the experimentally observed transition from commensurate to incommensurate CDW (ICDW) order with doping or pressure, and the emergence of a superconducting dome that coexists with ICDW. Finally, to characterize microscopically the effects of the interplay between CDW and SC, the spectrum of CDW fluctuations beyond mean-field was studied in detail. In the aggregate, the work reported here provides an encompassing understanding of what are possibly key microscopic underpinnings of the CDW and SC physics in TiSe2.

This book is dedicated to the new two-dimensional one-atomic-layer-thick materials such as graphene, metallic chalcogenides, silicene and other 2D materials. The book describes their main physical properties and applications in nanoelctronics, photonics, sensing and computing. A large part of the book deals with graphene and its amazing physical properties. Another important part of the book deals with semiconductor monolayers such as MoS2 with impressive applications in photonics, and electronics. Silicene and germanene are the atom-thick counterparts of silicon and germanium with impressive applications in electronics and photonics which are still unexplored. Consideration of two-dimensional electron gas devices conclude the treatment. The physics of 2DEG is explained in detail and the applications in THz and IR region are discussed. Both authors are working currently on these 2D materials developing theory and applications.

This book focuses on the fundamental phenomena at nanoscale. It covers synthesis, properties, characterization and computer modelling of nanomaterials, nanotechnologies, bionanotechnology, involving nanodevices. Further topics are imaging, measuring, modeling and manipulating of low dimensional matter at nanoscale. The topics covered in the book are of vital importance in a wide range of modern and emerging technologies employed or to be employed in most industries, communication, healthcare, energy, conservation , biology, medical science, food, environment, and education, and consequently have great impact on our society.

This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.

Handbook of Optoelectronics offers a self-contained reference from the basic science and light sources to devices and modern applications across the entire spectrum of disciplines utilizing optoelectronic technologies. This second edition gives a complete update of the original work with a focus on systems and applications. Volume I covers the details of optoelectronic devices and techniques including semiconductor lasers, optical detectors and receivers, optical fiber devices, modulators, amplifiers, integrated optics, LEDs, and engineered optical materials with brand new chapters on silicon photonics, nanophotonics, and graphene optoelectronics. Volume II addresses the underlying system technologies enabling state-of-the-art communications, imaging, displays, sensing, data processing, energy conversion, and actuation. Volume III is brand new to this edition, focusing on applications in infrastructure, transport, security, surveillance, environmental monitoring, military, industrial, oil and gas, energy generation and distribution, medicine, and free space. No other resource in the field comes close to its breadth and depth, with contributions from leading industrial and academic institutions around the world. Whether used as a reference, research tool, or broad-based introduction to the field, the Handbook offers everything you need to get started. (The previous edition of this title was published as Handbook of Optoelectronics, 9780750306461.) John P. Dakin, PhD, is professor (emeritus) at the Optoelectronics Research Centre, University of Southampton, UK. Robert G. W. Brown, PhD, is chief executive officer of the American Institute of Physics and an adjunct full professor in the Beckman Laser Institute and Medical Clinic at the University of California, Irvine.

The purpose of virtual reality is to make possible a sensorimotor and cognitive activity for a user in a digitally created artificial world. Recent advances in computer technology have led to a new generation of VR devices such as VR headsets. Accordingly, virtual reality poses many new scientific challenges for researchers and professionals. The aim of this book, a manual meant for both designers and users of virtual reality, is to present the current state of knowledge on the use of VR headsets in the most complete way possible. The book is divided into 13 chapters. The objective of the first chapter is to give an introduction to VR and clarify its scope. The next chapter presents a theoretical approach to virtual reality through our Immersion and Interaction methodology also known as "3I(2) model''. Then, a chapter about human senses is necessary to understand the sensorimotor immersion, especially vision. These chapters are followed by several chapters which present the different visual interfaces and the VR headsets currently available on the market. These devices can impart comfort and health problems due to sensorimotor discrepancies. A chapter is devoted to these problems, followed by a chapter that gives a detailed discussion of methods and 32 solutions to dispel, or at least to decrease, VR sickness. The following three chapters present different VR applications that use VR headsets (behavioural sciences, industrial uses and Digital Art) and the final chapter provides conclusions and discusses future VR challenges.

The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

Theory of Superconductivity: From Weak to Strong Coupling leads the reader from basic principles through detailed derivations and a description of the many interesting phenomena in conventional and high-temperature superconductors. The book describes physical properties of novel superconductors, in particular, the normal state, superconducting critical temperatures and critical fields, isotope effects, normal and superconducting gaps, tunneling, angle-resolved photoemission, stripes, and symmetries. The book divides naturally into two parts. Part I introduces the phenomenology of superconductivity, the microscopic BCS theory, and its extension to the intermediate coupling regime. The first three chapters of this part cover generally accepted themes in the conventional theory of superconductivity and serve as a good introduction to the subject. Chapter 4 describes what happens to the conventional theory when the coupling between electrons becomes strong. Part II describes key physical properties of high-temperature superconductors and their theoretical interpretation. Alternative viewpoints are discussed, but the emphasis is placed on the bipolaron theory.

Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts."

The book covers all essential elements of current and next generation fibre optic networks, including many that are ignored in other books. The reader gains an in-depth understanding of the current and future capabilities of fibre optic communication networks. He can estimate what fibre optics has to provide and where its (current and long-term) limitations may lie. Optoelectronic devices and glass fibres are the basis of contemporary communication systems. The book deals with the various components of these systems such as lasers, amplifiers, modulation devices, converters, optical switches, filters, detectors, emitters, sensors and fibre transfer systems. A systematic evaluation of the state of the art in related technological research and the level reached in application is given.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investi

The book provides a collection of selected papers presented to the third International Conference on Photonics, Optics and Laser Technology PHOTOPTICS 2015, covering the three main conference scientific areas of "Optics", "Photonics" and "Lasers". The selected papers, in two classes full and short, result from a double blind review carried out by the conference program committee members which are highly qualified experts in conference topic areas.

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides readers through fundamental principles and focuses on crucial advances in making commercial use of silicon photonics a viable reality in the telecom and biomedical industries. Taking into account existing and anticipated industrial directions, the book balances coverage of theory and practical experimental research to explore solutions for obstacles to the viable commercialization of silicon photonics. The book's special features include: A section on silicon plasmonic waveguides Detailed coverage of novel III-V applications A chapter on 3D integration Discussion of applications for energy harvesting/photovoltaics This book reviews the most important technological trends and challenges. It presents topics involving major silicon photonics applications in telecommunications, high-power photonics, and biomedicine. It includes discussion of silicon plasmonic waveguides, piezoelectric tuning of silicon's optical properties, and applications of two-photon absorption. Expert authors with industry research experience examine the challenge of hybridizing III-V compound semiconductors on silicon to achieve monolithic light sources. They also address economic compatibility and heat dissipation issues in CMOS chips, challenges in designing electronic photonics in

With the ongoing, worldwide installation of 40 Gbit/s fiber optic transmission systems, there is an urgency to learn more about the photonic devices supporting this technology. Focusing on the components used to generate, modulate, and receive optical signals, High-Speed Photonic Devices presents the state-of- the-art enabling technologies behind high-speed telecommunication systems. Written by experts in the field, the book explores high-speed transmitters, receivers, electronics, and all-optical techniques. Following a brief introduction of the devices, the subsequent chapters cover... High-speed, low-driving voltage electroabsorption modulators and their integration with distributed-feedback lasers for high-bitrate and long-haul optical fiber transmission systems Linear electro-optic Ti-diffused LiNbO3 devices, specifically, traveling-wave high-speed modulators III-V compound semiconductor electro-optic modulators High-speed polymer device technology and numerous examples of new material combinations Fundamental physical processes used in common photodetectors as well as some emerging photodetector designs High-speed electronic devices and integrated circuit technologies for very high-speed future lightwave communication systems Very high-speed all-optical technologies required for multi-terabit/s optical fiber transmission systems. Although it is hard to predict which particular technology will prevail in the future, you can be sure that the systems discussed in High-Speed Photonic Devices will help pave the way for low-cost, high-performance fiber optic networks that will cover the entire globe. This improved and easily accessible communications capability will no doubt better the quality of life for everyone.

The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco (c) ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco (c) ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)

This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

This book helps you understand the basic properties of semiconductor quantum wells and superlattices and describes how they can be utilized for long-wavelength infrared detectors and imaging arrays. Includes 111 illustrations and 237 equations.

Drawn from the author's introductory course at the University of Orsay, Superconductivity of Metals and Alloys is intended to explain the basic knowledge of superconductivity for both experimentalists and theoreticians. These notes begin with an elementary discussion of magnetic properties of Type I and Type II superconductors. The microscopic theory is then built up in the Bogolubov language of self-consistent fields. This text provides the classic, fundamental basis for any work in the field of superconductivity.

First published in 1990, this book provides an overview of the global distribution of the electronics industry and the structural factors which promoted this distribution by the end of the 1980s. Regarded as a 'flagship' sector in both advanced and developing countries, the electronics industry is encouraged by governments everywhere. Covering both the civilian and the military sides of the industry, Professor Todd reflects on the future of civilian electronics in the light of its global segmentation, and hints at the fundamental role of governments in the unfolding of both civilian and defence-electronics developments. He also endorses the overwhelming significance of strategies being played by electronics enterprises in both the USA and Japan.

This book presents how metasurfaces are exploited to develop new low-cost single sensor based multispectral cameras. Multispectral cameras extend the concept of conventional colour cameras to capture images with multiple color bands and with narrow spectral passbands. Images from a multispectral camera can extract significant amount of additional information that the human eye or a normal camera fails to capture and thus have important applications in precision agriculture, forestry, medicine, object identifications, and classifications. Conventional multispectral cameras are made up of multiple image sensors each externally fitted with a narrow passband wavelength filters, optics and multiple electronics. The need for multiple sensors for each band results in a number of problems such as being bulky, power hungry and suffering from image co-registration problems which in turn limits their wide usage. The above problems can be eliminated if a multispectral camera is developed using one single image sensor.

In this book new experimental investigations of properties of Josephson junctions and systems are explored with the help of recent developments in superconductivity. The theory of the Josephson effect is presented taking into account the influence of multiband and anisotropy effects in new superconducting compounds. Anharmonicity effects in current-phase relation on Josephson junctions dynamics are discussed. Recent studies in analogue and digital superconductivity electronics are presented. Topics of special interest include resistive single flux quantum logic in digital electronics. Application of Josephson junctions in quantum computing as superconducting quantum bits are analyzed. Particular attention is given to understanding chaotic behaviour of Josephson junctions and systems. The book is written for graduate students and researchers in the field of applied superconductivity.

This book is a collection of some of the invited talks presented at the international meeting held at the Max Planck Institut fuer Physik Komplexer Systeme, Dresden, Germany during August 6-30, 2001, on the rapidly developing field of nanoscale science in science and bio-electronics Semiconductor physics has experienced unprecedented developments over the second half of the twentieth century. The exponential growth in microelectronic processing power and the size of dynamic memorie has been achieved by significant downscaling of the minimum feature size. Smaller feature sizes result in increased functional density, faster speed, and lower costs. In this process one is reaching the limits where quantum effects and fluctuations are beginning to play an important role.
"This book reflects the achievements of the present times and future directions of research on nanoscopic dimensions."

Three-volumes book "Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors" is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume "Photodetectors" of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.