This volume presents an in-depth review of experimental and theoretical studies on the newly discovered Fe-based superconductors. Following the Introduction, which places iron-based superconductors in the context of other unconventional superconductors, the book is divided into three sections covering sample growth, experimental characterization, and theoretical understanding. To understand the complex structure-property relationships of these materials, results from a wide range of experimental techniques and theoretical approaches are described that probe the electronic and magnetic properties and offer insight into either itinerant or localized electronic states. The extensive reference lists provide a bridge to further reading. Iron-Based Superconductivity is essential reading for advanced undergraduate and graduate students as well as researchers active in the fields of condensed matter physics and materials science in general, particularly those with an interest in correlated metals, frustrated spin systems, superconductivity, and competing orders.

Comprehensive resource on design of power electronics converters for three-phase AC applications Design of Three-phase AC Power Electronics Converters contains a systematic discussion of the three-phase AC converter design considering various converter electrical, thermal, and mechanical subsystems and functions. . Focusing on establishing converter components and subsystems models needed for the design, the text demonstrates example designs for these subsystems and for whole three-phase AC converters considering interactions among subsystems. The design methods apply to different applications and topologies. The text consists of four parts. Part I is an introduction, which presents the basics of the three-phase AC converter, its design, and the goal and organization of the book. Part II focuses on characteristics and models important to the converter design for components commonly used in three-phase AC converters. Part III is on the design of subsystems, including passive rectifiers, inverters and active rectifiers, electromagnetic interference (EMI) filters, thermal management system, control and auxiliaries, mechanical system, and application considerations. Part IV is on design optimization, which presents methodology to achieve optimal design results for three-phase AC converters. Specific sample topics covered in Design of Three-phase AC Power Electronics Converters include: Models and characteristics for devices most commonly used in three-phase converters, including conventional Si devices , and emerging SiC and GaN devices. Models and selection of various capacitors; characteristics and design of magnetics using different types of magnetic cores, with a focus on inductors Optimal three-phase AC converter design including design and selection of devices, AC line inductors, DC bus capacitors, EMI filters, heatsinks, and control. The design considers both steady state and transient conditions Load and source impact converter design, such as motors and grid condition impacts. For researchers and graduate students in power electronics, along with practicing engineers working in the area of three-phase AC converters, Design of Three-phase AC Power Electronics Converters serves as an essential resource for the subject and may be used as a textbook or industry reference.

This book brings together numerous contributions to the field of magnetoelectric (ME) composites that have been reported so far. Theoretical models of ME coupling in composites relate to the wide frequency range: from low-frequency to microwave ones and are based on simultaneous solving the elastostatic/elastodynamic and electrodynamics equations. Suggested models enable one to optimize magnetoelectric parameters of a composite. The authors hope to provide some assimilation of facts into establish knowledge for readers new to the field, so that the potential of the field can be made transparent to new generations of talent to advance the subject matter.

The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis placed on today's advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate-student level. The second part considers the physics and modeling of bipolar transistors in detail. The final part describes basic circuit configurations, aspects of process integration and applications. This modern book-length treatment will interest those working in the field, including circuit designers, industrial process developers, and PhD students. 

The electromechanical coupling effect introduced by piezoelectric vibration energy harvesting (PVEH) presents serious modeling challenges. This book provides close-form accurate mathematical modeling and experimental techniques to design and validate dual function PVEH vibration absorbing devices as a solution to mitigate vibration and maximize operational efficiency. It includes in-depth experimental validation of a PVEH beam model based on the analytical modal analysis method (AMAM), precisely identifying electrical loads that harvest maximum power and induce maximum electrical damping. The author's detailed analysis will be useful for researchers working in the rapidly emerging field of vibration based energy harvesting, as well as for students investigating electromechanical devices, piezoelectric sensors and actuators, and vibration control engineering.

Metamaterials: Theory, Design, and Applications goes beyond left-handed materials (LHM) or negative index materials (NIM) and focuses on recent research activity. Included here is an introduction to optical transformation theory, revealing invisible cloaks, EM concentrators, beam splitters, and new-type antennas, a presentation of general theory on artificial metamaterials composed of periodic structures, coverage of a new rapid design method for inhomogeneous metamaterials, which makes it easier to design a cloak, and new developments including but not limited to experimental verification of invisible cloaks, FDTD simulations of invisible cloaks, the microwave and RF applications of metamaterials, sub-wavelength imaging using anisotropic metamaterials, dynamical metamaterial systems, photonic metamaterials, and magnetic plasmon effects of metamaterials.

Model-based development methods, and supporting technologies, can provide the techniques and tools needed to address the dilemma between reducing system development costs and time, and developing increasingly complex systems. This book provides the information needed to understand and apply model-drive engineering (MDE) and model-drive architecture (MDA) approaches to the development of embedded systems. Chapters, written by experts from academia and industry, cover topics relating to MDE practices and methods, as well as emerging MDE technologies. Much of the writing is based on the presentations given at the Summer School "MDE for Embedded Systems" held at Brest, France, in September 2004.

Optoelectronic Organic-Inorganic Semiconductor Heterojunctions summarizes advances in the development of organic-inorganic semiconductor heterojunctions, points out challenges and possible solutions for material/device design, and evaluates prospects for commercial applications. Introduces the concept and basic mechanism of semiconductor heterojunctions Describes a series of organic-inorganic semiconductor heterojunctions with desirable electrical and optical properties for optoelectronic devices Discusses typical devices such as solar cells, photo-detectors, and optoelectronic memories Outlines the materials and device challenges as well as possible strategies to promote the commercial translation of semiconductor heterojunctions-based optoelectronic devices Aimed at graduate students and researchers working in solid-state materials and electronics, this book offers a comprehensive yet accessible view of the state of the art and future directions.

"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications."
-Ron Wilson, EETimes

"SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it."
-Alberto Sangiovanni-Vincentelli
Professor, University of California, Berkeley
Cofounder, Chief Technology Officer, Member of Board
Cadence Design Systems Inc.

Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to:

• Detail many of IBM's SiGe technology development programs
• Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling
• Discuss IBM's design automation and signal integrity knowledge and implementation methodologies
• Illustrate design applications in a variety of IBM's SiGe technologies
• Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design

Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe processtechnologies and design kits.

"This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development."
-Ron Wilson
Silicon Engineering Editor, EETimes

"This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods."
-John Kelly
Senior Vice President and Group Executive, Technology Group, IBM

Digital images have several benefits, such as faster and inexpensive processing cost, easy storage and communication, immediate quality assessment, multiple copying while preserving quality, swift and economical reproduction, and adaptable manipulation. Digital medical images play a vital role in everyday life. Medical imaging is the process of producing visible images of inner structures of the body for scientific and medical study and treatment as well as a view of the function of interior tissues. This process pursues disorder identification and management. Medical imaging in 2D and 3D includes many techniques and operations such as image gaining, storage, presentation, and communication. The 2D and 3D images can be processed in multiple dimensions. Depending on the requirement of a specific problem, one must identify various features of 2D or 3D images while applying suitable algorithms. These image processing techniques began in the 1960s and were used in such fields as space, clinical purposes, the arts, and television image improvement. In the 1970s, with the development of computer systems, the cost of image processing was reduced and processes became faster. In the 2000s, image processing became quicker, inexpensive, and simpler. In the 2020s, image processing has become a more accurate, more efficient, and self-learning technology. This book highlights the framework of the robust and novel methods for medical image processing techniques in 2D and 3D. The chapters explore existing and emerging image challenges and opportunities in the medical field using various medical image processing techniques. The book discusses real-time applications for artificial intelligence and machine learning in medical image processing. The authors also discuss implementation strategies and future research directions for the design and application requirements of these systems. This book will benefit researchers in the medical image processing field as well as those looking to promote the mutual understanding of researchers within different disciplines that incorporate AI and machine learning. FEATURES Highlights the framework of robust and novel methods for medical image processing techniques Discusses implementation strategies and future research directions for the design and application requirements of medical imaging Examines real-time application needs Explores existing and emerging image challenges and opportunities in the medical field

This book focuses on recently developed crystal growth techniques to grow large and high quality superconducting single crystals. The techniques applied are traveling solvent floating zone (TSFZ) with infrared image furnace, Bridgeman, solution/flux and top seeded solution growth (TSSG) methods. The materials range from cuprates, cobaltates to pnictides including La2CuO4-based (LCO), YBa2Cu3O7-d (YBCO), Bi2Sr2Can 1CunO2n+4+ (n=1,2,3) (BSCCO) to NaxCoO2. The modified Bridgman "cold finger" method is devoted to the pnictide system with the best quality (transition width DTc~0.5 K) with highest Tc~38.5 K of Ba0.68K0.32Fe2A2. The book presents various iron-based superconductors with different structures, such as 1111, 122, 111, 11 and 42622,10-3-8. Detailed single crystal growth methods (fluxes, Bridgman, floating zone), the associated procedures and their impact to crystal size and quality are presented. The book also describes the influence of doping on the structure and the electric, magnetic, and superconducting properties of these compounds in a comparative study of different growth methods. It describes particularly under-, optimal and over-doped with oxygen cuprates (LCO, YBCO and BSCCO) and hole/electron/isovalently doped parent compounds AFe2As2 (A = Ba, Sr, Ca) (122), chalcogenides AxFe2-ySe2(A = K, Rb, Cs) (122), and Fe1-dTe1-xSex (11). A review of the current growth technologies and future growth efforts handling volatile and poisonous components are also presented.

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Electronic Conduction: Classical and Quantum Theory to Nanoelectronic Devices provides a concise, complete introduction to the fundamental principles of electronic conduction in microelectronic and nanoelectronic devices, with an emphasis on integrating the quantum aspects of conduction. The chapter coverage begins by presenting the classical theory of conduction, including introductory chapters on quantum mechanics and the solid state, then moving to a complete presentation of essential theory for understanding modern electronic devices. The author's unique approach is applicable to microscale and nanoscale device simulation, which is particularly timely given the explosion in the nanoelectronics field. Features Self-contained Gives a complete account of classical and quantum aspects of conduction in nanometer scale devices Emphasises core principles, the book can be useful to electrical engineers and material scientists, and no prior course in semiconductors is necessary Highlights the bridge to modern electronics, first presenting the physics, and then the engineering complications related to quantum behaviour Includes many clear, illustrative diagrams and chapter problem sets Gives an account of post-Silicon devices such as the GaAs MOSFET, the CNT-FET and the vacuum transistor Showcases why quantum mechanics is necessary with modern devices due to their size and corresponding electron transport properties Discusses all the issues that will enable readers to conduct their own research

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore's law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

The book is an expanded autobiography of the famous theoretical physicist Isaak Khalatnikov. He worked together with L.D. Landau at the Institute for Physical Problems lead by P.L. Kapitza. He is the co-author of L.D. Landau in a number of important works. They worked together in the frame of the so-called Nuclear Bomb Project. After the death of L.D. Landau, I.M. Khalatnikov initiated the establishment of the Institute for Theoretical Physics, named in honour of L.D. Landau, within the USSR Academy of Sciences. He headed this institute from the beginning as its Director. The institute inherited almost all traditions of the Landau scientific school and played a prominent role in the development of theoretical physics. So, this is a story about how the institute was created, how it worked, and about the life of the physicists in the "golden age" of the Soviet science. A separate chapter is devoted to todays life of the institute and the young generation of physicists working now in science. It is an historically interesting book on the development of Soviet and Russian science and presents the background of the Soviet nuclear bomb program in the cold war age. In war times, Khalatnikov was a chief of the military staff of nuclear research. He writes about the internal conditions of Soviet society, the way of operating of the Soviet authorities and ways for scientists to interact with them. It gives many interesting insights into the development of superconductivity and superfluidity. The book is written by the most experienced and best informed person among the few living Russian scientists in the environment of Landau. Many stories of the book were never published before and considered as "top secret".

Frank Handle ] 1.1 What to Expect For some time now, I have been toying around with the idea of writing a book about "Ceramic Extrusion," because to my amazement I have been unable to locate a single existing, comprehensive rundown on the subject - much in contrast to, say, plastic extrusion and despite the fact that there are some outstanding contributions to be found about certain, individual topics, such as those in textbooks by Reed 1], Krause 2], Bender/Handle ] 3] et al. By way of analogy to Woody Allen's wonderfully ironic movie entitled "Eve- thing You Always Wanted to Know about Sex," I originally intended to call this book "Everything You Always Wanted to Know about Ceramic Extrusion," but - ter giving it some extra thought, I eventually decided on a somewhat soberer title. Nevertheless, my companion writers and I have done our best - considering our target group and their motives - not to revert to the kind of jargon that people use when they think the less understandable it sounds, the more scienti c it appears. This book addresses all those who are looking for a lot or a little general or selective information about ceramic extrusion and its sundry aspects. We realize that most of our readers will not be perusing this book just for fun or out of intellectual curiosity, but because they hope to get some use out of it for their own endeavours."

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third Edition provides a complete course in quantum mechanics for students of semiconductor device physics and electrical engineering. It provides the necessary background to quantum theory for those starting work on micro- and nanoelectronic structures and is particularly useful for those beginning work with modern semiconductors devices, lasers, and qubits. This book was developed from a course the author has taught for many years with a style and order of presentation of material specifically designed for this audience. It introduces the main concepts of quantum mechanics which are important in everyday solid-state physics and electronics. Each topic includes examples which have been carefully chosen to draw upon relevant experimental research. It also includes problems with solutions to test understanding of theory. Full updated throughout, the third edition contains the latest developments, experiments, and device concepts, in addition to three fully revised chapters on operators and expectations and spin angular momentum, it contains completely new material on superconducting devices and approaches to quantum computing.

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third Edition provides a complete course in quantum mechanics for students of semiconductor device physics and electrical engineering. It provides the necessary background to quantum theory for those starting work on micro- and nanoelectronic structures and is particularly useful for those beginning work with modern semiconductors devices, lasers, and qubits. This book was developed from a course the author has taught for many years with a style and order of presentation of material specifically designed for this audience. It introduces the main concepts of quantum mechanics which are important in everyday solid-state physics and electronics. Each topic includes examples which have been carefully chosen to draw upon relevant experimental research. It also includes problems with solutions to test understanding of theory. Full updated throughout, the third edition contains the latest developments, experiments, and device concepts, in addition to three fully revised chapters on operators and expectations and spin angular momentum, it contains completely new material on superconducting devices and approaches to quantum computing.

This book offers an extensive, interdisciplinary overview of dynamic textiles. Specifically, it discusses new findings and design concepts concerning the integration of smart materials into textile substrates and their corresponding dynamic behavior. Introducing the topic of dynamic color in textiles, it presents experimental procedures to achieve color change and dynamic light transmittance in thermochromic textiles, and examines their thermoresponsive behavior and respective electrical activation. Moreover, it also addresses the topic of dynamic form and reports on the authors' original findings using shape-memory alloys and geometric morphologies based on origami techniques. Covering innovative smart textiles and important considerations in terms of design variables when developing textiles with dynamic qualities, and providing extensive, practice-oriented insights into the interaction of textiles with light, it is primarily intended for academics, researchers and practitioners developing smart, dynamic and interactive textiles. The sections describing in detail the experimental work aimed at the integration of smart materials in textile substrates also appeal to professionals in the textile industry.

Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.

Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.