Gait analysis is the study of the walking or running pattern of an individual. This can include spatial and temporal measurements such as step length, stride length and speed along with angular measurements of various joints and the interplay between various parts like the foot, hip, pelvis or spine when walking. Gait analysis can be used to assess clinical conditions and design effective rehabilitation; for example, following limb injury or amputation, or other disorders such as a stroke or Parkinson's diagnosis. It can be used to influence intervention decisions, such as whether a patient should undergo surgery, further physiotherapy, or begin a particular treatment regime. Gait analysis can also be used in sports science to monitor and review performance and technique. Gait can be recorded in a variety of ways, including pressure sensors, force plates, in-shoe pressure systems, through marker-based or marker-less systems using various cameras or sensors to calculate body positions in a set sequence of movements. This book focuses on both the hardware systems for collecting data as well as data visualisation and mathematical models for interpreting the data. It is written by a range of international researchers from academia, industry, and clinical settings, providing a complete overview of gait analysis technologies suitable for an audience of engineers in rehabilitation technologies or other biomedical engineering fields.

Research on biomedical applications of nanomaterials has exhibited the rapidly evolving field of biomedical sciences by showing how effective they are in treatment. These particles hold considerable potential for biomedical applications. Work is ongoing, and the results suggest a possibility for a sustainable future for nanomaterials in both therapeutic and biomedical fields. This book highlights current and emerging applications, taking global research findings into consideration. We believe the focus on the identification and role of nanomaterial applications in therapeutic and biomedical sciences can lead to novel solutions in the fields. The chapters of this book are disseminated in a manner that can be readily adopted as sources for new and further study. The editors integrate advanced texts in their research that help graduate students, researchers and professors. Additionally, we believe that international readers will be able to make use of this book for reference purposes.

Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.

The physics of non-equilibrium many-body systems is a rapidly expanding area of theoretical physics. Traditionally employed in laser physics and superconducting kinetics, these techniques have more recently found applications in the dynamics of cold atomic gases, mesoscopic and nano-mechanical systems, and quantum computation. This book provides a detailed presentation of modern non-equilibrium field-theoretical methods, applied to examples ranging from biophysics to the kinetics of superfluids and superconductors. A highly pedagogical and self-contained approach is adopted within the text, making it ideal as a reference for graduate students and researchers in condensed matter physics. In this Second Edition, the text has been substantially updated to include recent developments in the field such as driven-dissipative quantum systems, kinetics of fermions with Berry curvature, and Floquet kinetics of periodically driven systems, among many other important new topics. Problems have been added throughout, structured as compact guided research projects that encourage independent exploration.

This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.

Both the demographics and lack of resources in the health and well-being industry are increasingly forcing us to find alternative solutions for individualized health and social care. In an effort to address this issue, smart technologies present enormous potential in solving this challenge. This book strives to enhance communication and collaboration between technology and health and social care sectors. The reader will receive an extensive overview of the possibilities of various technologies in care sectors (including ICT, electronics, automation, and sensor technology) written by experts from various countries. It will prove extremely useful for engineers developing well-being related systems, software, or other devices that can be used by professionals working with people with specialist needs, well-being and health service providers, educators teaching related courses, and upper level undergraduate students and graduate student studying related topics. The technology focus of the book is widespread and addresses elderly care and hospitals, in addition to solutions for various user groups, devices, and technologies. Beyond serving as a resource for nurses and people working in care sector, the book is also meant to give guidelines for engineers developing person-centered systems by exploring the integration of these technologies into service systems.

This book introduces the reader to a number of challenges for the operation of electronic devices in various harsh environmental conditions. While some chapters focus on measuring and understanding the effects of these environments on electronic components, many also propose design solutions, whether in choice of material, innovative structures, or strategies for amelioration and repair. Many applications need electronics designed to operate in harsh environments. Readers will find, in this collection of topics, tools and ideas useful in their own pursuits and of interest to their intellectual curiosity. With a focus on radiation, operating conditions, sensor systems, package, and system design, the book is divided into three parts. The first part deals with sensing devices designed for operating in the presence of radiation, commercials of the shelf (COTS) products for space computing, and influences of single event upset. The second covers system and package design for harsh operating conditions. The third presents devices for biomedical applications under moisture and temperature loads in the frame of sensor systems and operating conditions.

Electrical Conductive Adhesives with Nanotechnologies begins with an overview of electronic packaging and discusses the various adhesives options currently available, including lead-free solder and ECAs (Electrically Conductive Adhesives). The material presented focuses on the three ECA categories specifically, Isotropically Conductive Adhesives (ICAs) Anisotropically Conductive Adhesives/Films (ACA/ACF) and Nonconductive Adhesives/Films (NCA/NCF). Discussing the advantages and limitations of each technique, and how each technique is currently applied. Lastly, a detailed presentation of how nano techniques can be applied to conductive adhesives is discussed, including recent research and development of nano component adhesives/nano component films, their electrical properties, thermal performance, bonding pressure and assembly and reliability.

Short, comprehensive overview concentrating on major breakthroughs, disruptive ideas, and unexpected results Accessible to all interested in subatomic physics with little prior knowledge required Contains the latest developments in this exciting field

Short, comprehensive overview concentrating on major breakthroughs, disruptive ideas, and unexpected results Accessible to all interested in subatomic physics with little prior knowledge required Contains the latest developments in this exciting field

The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

The role of manufacturing in a country's economy and societal development has long been established through their wealth generating capabilities. To enhance and widen our knowledge of materials and to increase innovation and responsiveness to ever-increasing international needs, more in-depth studies of functionally graded materials/tailor-made materials, recent advancements in manufacturing processes and new design philosophies are needed at present. The objective of this volume is to bring together experts from academic institutions, industries and research organizations and professional engineers for sharing of knowledge, expertise and experience in the emerging trends related to design, advanced materials processing and characterization, and advanced manufacturing processes.

Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book: Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices Includes rigorous mathematical derivations of the semiconductor physics Illustrates major concepts thorough discussions and various diagrams

This open access book collects the contributions of the seventh school on Magnetism and Synchrotron Radiation held in Mittelwihr, France, from 7 to 12 October 2018. It starts with an introduction to the physics of modern X-ray sources followed by a general overview of magnetism. Next, light / matter interaction in the X-ray range is covered with emphasis on different types of angular dependence of X-ray absorption spectroscopy and scattering. In the end, two domains where synchrotron radiation-based techniques led to new insights in condensed matter physics, namely spintronics and superconductivity, are discussed. The book is intended for advanced students and researchers to get acquaintance with the basic knowledge of X-ray light sources and to step into synchrotron-based techniques for magnetic studies in condensed matter physics or chemistry.

This book covers the advances in the studies of hydrogen-bonding-driven supramolecular systems made over the past decade. It is divided into four parts, with the first introducing the basics of hydrogen bonding and important hydrogen bonding patterns in solution as well as in the solid state. The second part covers molecular recognition and supramolecular structures driven by hydrogen bonding. The third part introduces the formation of hollow and giant macrocycles directed by hydrogen bonding, while the last part summarizes hydrogen bonded supramolecular polymers. This book is designed to bring together in a single volume the many important aspects of hydrogen bonding supramolecular chemistry and will be a valuable resource for graduates and researchers working in supramolecular and related sciences. Zhan-Ting Li, PhD, is a Professor of Organic Chemistry at the Department of Chemistry, Fudan University, China. Li-Zhu Wu, PhD, is a Professor of Organic Chemistry at the Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China.

Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at the basic electronic and optical properties of diluted nitrides. The aim of Physics and Applications of Diluted Nitrides is to provide graduate students, researchers and engineers with a comprehensive overview of the present knowledge and future perspectives of diluted nitrides. Co-authored by a group of leading scientists in the field, this book brings the reader up to speed on the development and current state of diluted nitride applications, as well as the technologies to be developed in the near future.

This book describes the physical mechanism of high-frequency (radio-frequency) capacitive discharge (RFCD) of low and medium pressure and the properties of discharge plasma in detail. The main properties and characteristics of RFCD, the features of electric breakdown in a high-frequency field are also investigated. The properties of near-electrode layers of a spatial discharge, the nature of the electric field in them, and the processes of charge transport to electrodes are explored. The work is intended for scientists engaged in gas discharge physics and low-temperature plasmas, graduate students and students of physics, physical chemistry, and relevant specialties.

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

This book covers the chemistry of the major processes involved in the manufacture of integrated circuits. The authors describe all the major processes in use, together with some interesting processes which are currently being developed and hold future promise. Each chapter covers the current state of knowledge of the underlying chemistry of a particular process, and identifies areas of uncertainty requiring further research.

Recent advances in semiconductor technology offer vertical interconnect access (via) that extend through silicon, popularly known as through silicon via (TSV). This book provides a comprehensive review of the theory behind TSVs while covering most recent advancements in materials, models and designs. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for Cu, carbon nanotube (CNT) and graphene nanoribbon (GNR) based TSVs are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR based TSVs are also discussed.

This book presents a critical perspective of the applications of organometallic compounds (including those with metal or metalloid elements) and other related metal complexes as versatile functional materials in the transformation of light into electricity (solar energy conversion) and electricity into light (light generation in light emitting diode), in the reduction of carbon dioxide to useful chemicals, as well as in the safe and efficient production and utilization of hydrogen, which serves as an energy storage medium (i.e. energy carrier). This book focuses on recent research developments in these emerging areas, with an emphasis on fundamental concepts and current applications of functional organometallic complexes and related metal-based molecules for energy research. With contributions from front-line researchers in the field from academia and industry, this timely book provides a valuable contribution to the scientific community in the field of energy science related to metal-based molecular materials. Wai-Yeung Wong, PhD, is Chair Professor and Head of the Department of Chemistry at Hong Kong Baptist University, Hong Kong, P. R. China.

Provides an introduction to fundamental mixer types, as well as variations on the classical mixer designs.