Sensors for Stretchable Electronics in Nanotechnology discusses the fabrication of semiconducting materials, simple and cost-effective synthesis, and unique mechanisms that enable the fabrication of fully elastic electronic devices that can tolerate high strain. It reviews specific applications that directly benefit from highly compliant electronics, including transistors, photonic devices, and sensors. Discusses ultra-flexible electronics, highlighting its upcoming significance for the industrial-scale production of electronic goods Outlines the role of nanomaterials in fabricating flexible and multifunctional sensors and their applications in sensor technologies Covers graphene-based flexible and stretchable strain sensors Details various applications including wearable electronics, chemical sensors for detecting humidity, environmental hazards, pathogens, and biological warfare agents, and biosensors for detecting vital signals This book is a valuable resource for students, scientists, and professionals working in the research areas of sensor technologies, nanotechnology, materials science, chemistry, physics, biological and medical sciences, the healthcare industry, environmental science, and technology.

This invaluable book provides a comprehensive treatment of design and applications of semiconductor optical amplifiers (SOA). SOA is an important component for optical communication systems. It has applications as in-line amplifiers and as functional devices in evolving optical networks. The functional applications of SOAs were first studied in the early 1990's, since then the diversity and scope of such applications have been steadily growing. This is the second edition of a book on Semiconductor Optical Amplifiers first published in 2006 by the same authors. Several chapters and sections representing new developments in the chapters of the first edition have been added. The new chapters cover quantum dot semiconductor optical amplifiers (QD-SOA), reflective semiconductor optical amplifiers (RSOA) for passive optical network applications, two-photon absorption in amplifiers, and, applications of SOA as broadband sources. They represent advances in research, technology and commercial trends in the area of semiconductor optical amplifiers.Semiconductor Optical Amplifier is self-contained and unified in presentation. It can be used as an advanced text by graduate students and by practicing engineers. It is also suitable for non-experts who wish to have an overview of optical amplifiers. The treatments in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.

This monograph offers a comprehensive overview of diverse quantization phenomena in layered materials, covering current mainstream experimental and theoretical research studies, and presenting essential properties of layered materials along with a wealth of figures. This book illustrates commonly used synthesis methods of these 2D materials and compares the calculated results and experimental measurements, including novel features not yet reported. The book also discusses experimental measurements of magnetic quantization, theoretical modeling for studying systems and covers diversified magneto-electronic properties, magneto-optical selection rules, unusual quantum Hall conductivities, and single- and many-particle magneto-Coulomb excitations. Rich and unique behaviors are clearly revealed in few-layer graphene systems with distinct stacking configuration, stacking-modulated structures, silicon-doped lattices, bilayer silicene/germanene systems with the bottom-top and bottom-bottom buckling structures, monolayer and bilayer phosphorene systems, and quantum topological insulators. The generalized tight-binding model, the static and dynamic Kubo formulas, and the random-phase approximation are developed/modified to thoroughly explore the fundamental properties and propose the concise physical pictures. Different high-resolution experimental measurements are discussed in detail, and they are consistent with the theoretical predictions. Aimed at readers working in materials science, physics, and engineering this book should be useful for potential applications in energy storage, electronic devices, and optoelectronic devices.

This book reports the basics of hybrid phosphor materials, their synthesis routes and their special properties and characterization techniques. It gives the reader information about the natural origins and development of hybrid materials, which are developed by combining inorganic and organic species in one material interface-determined materials. The book provides a general classification of hybrid materials, wherein inorganic materials modified by organic moieties are distinguished from organic materials or matrices modified by inorganic constituents. It gives a focus to the functionalization of organic materials by inorganic additives. The application areas covered include optoelectronic field, sensor applications, biological and environmental applications.

The Department of Electronics and Communication Engineering of KIET Group of Institutions, Delhi-NCR organized the 4th International Conference ICCE-2020 during November 28-29, 2020. Information compiled in this book is based on the 114 research papers of excellent quality covering different domains of Electronics and Communication Engineering, Computer Science Engineering, Information Technology, Electrical Engineering, Electronics and Instrumentation Engineering. The subject areas treated in the book are: Satellite, Radar and Microwave Techniques, Secure, Smart, and Reliable Networks, Next Generation Networks, Devices & Circuits, Signal & Image Processing, New Emerging Technologies, having the central focus on Recent Trends in Communication & Electronics (ICCE-2020). In addition, a few themes based on Special Sessions have also been conducted in ICCE-2020. The objective of the book resulting from the 4th International Conference on Recent Trends in Communication & Electronics (ICCE-2020) is to provide a resource for the study and research work for an interested audience comprising of researchers, students, audience, and practitioners in the areas of Communications & Computing Systems.

This book provides a comprehensive introduction to ferroics and frustrated materials. Ferroics comprise a range of materials classes with functionalities such as magnetism, polarization, and orbital degrees of freedom and strain. Frustration, due to geometrical constraints, and disorder, due to chemical and/or structural inhomogeneities, can lead to glassy behavior, which has either been directly observed or inferred in a range of materials classes from model systems such as artificial spin ice, shape memory alloys, and ferroelectrics to electronically functional materials such as manganites. Interesting and unusual properties are found to be associated with these glasses and have potential for novel applications. Just as in prototypical spin glass and structural glasses, the elements of frustration and disorder lead to non-ergodocity, history dependence, frequency dependent relaxation behavior, and the presence of inhomogeneous nano clusters or domains. In addition, there are new states of matter, such as spin ice; however, it is still an open question as to whether these systems belong to the same family or universality class. The purpose of this work is to collect in a single volume the range of materials systems with differing functionalities that show many of the common characteristics of geometrical frustration, where interacting degrees of freedom do not fit in a lattice or medium, and glassy behavior is accompanied by additional presence of disorder. The chapters are written by experts in their fields and span experiment and theory, as well as simulations. Frustrated Materials and Ferroic Glasses will be of interest to a wide range of readers in condensed matter physics and materials science.

The open research center project "Interdisciplinary fundamental research toward realization of a quantum computer" has been supported by the Ministry of Education, Japan for five years. This is a collection of the research outcomes by the members engaged in the project. To make the presentation self-contained, it starts with an overview by Mikio Nakahara, which serves as a concise introduction to quantum information and quantum computing. Subsequent contributions include subjects from physics, chemistry, mathematics, and information science, reflecting upon the wide variety of scientists working under this project. These contributions introduce NMR quantum computing and related techniques, number theory and coding theory, quantum error correction, photosynthesis, non-classical correlations and entanglement, neutral atom quantum computer, among others. Each of contributions will serve as a short introduction to these cutting edge research fields.

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

This volume provides a comprehensive introduction to the theory of d-wave superconductivity, focused on d-wave pairing symmetry and its physical consequences in the superconducting state. It discusses the basic concepts and methodologies related to high-temperature superconductivity and compares experimental phenomena with theoretical predictions. After a brief introduction to the basic theory of superconductivity and several models for high-temperature superconductivity, this book presents detailed derivations and explanations for various single-particle and collective properties of d-wave superconductors that can be monitored experimentally, including thermodynamics, angular-resolved photo-emission, single-particle and Josephson tunnelling, impurity scattering, magnetic and superfluid responses, transport and optical properties and mixed states. Various universal behaviours of d-wave superconductors are highlighted. Aimed primarily at graduate students and research scientists in condensed matter and materials physics, this text enables readers to understand systematically the physical properties of high-temperature superconductors.

This book covers theoretical and practical aspects of all major steps in the fabrication sequence. This book can be used conveniently in a semester length course on integrated circuit fabrication. This text can also serve as a reference for practicing engineer and scientist in the semiconductor industry. IC Fabrication are ever demanding of technology in rapidly growing industry growth opportunities are numerous. A recent survey shows that integrated circuit currently outnumber humans in UK, USA, India and China. The spectacular advances in the development and application of integrated circuit technology have led to the emergence of microelectronic process engineering as an independent discipline. Integrated circuit fabrication text books typically divide the fabrication sequence into a number of unit processes that are repeated to form the integrated circuit. The effect is to give the book an analysis flavor: a number of loosely related topics each with its own background material. Note: T& F does not sell or distribute the Hardback in India, Pakistan, Nepal, Bhutan, Bangladesh and Sri Lanka.

Structure and Concentration of Point Defects in Selected Spinels and Simple Oxides presents diagrams and numerical data of important properties of spinels and oxides based on experimental results published in the literature. The values of many parameters presented can be used for optimization of preparation of new systems, to predict the practical properties of these systems. Applications include electronic devices, new metallic alloys with improved corrosion resistance, new ceramic materials, and novel catalysts, particularly for oxygen evolution and reduction reactions. Organized into four comprehensive parts, the authors present the problem of the structure and concentration of ionic and electronic defects in magnetite and hausmannite, pure and doped with M3+ cations, and in spinels exhibiting magnetic properties and high electric conductance. Additional Features include: Includes 236 figures presenting equilibrium diagrams of point defects and other useful details related to stoichiometric and nonstoichiometric spinels and oxides. Details novel methods of calculation of equilibria involving point defects. Collects scattered data published in nearly 500 original articles since the 1950s on spinels and oxides in one useful volume. Building upon the data presented, this book is an indispensable reference for material scientists and engineers developing new metal or oxide-based systems can easily calculate other useful parameters and compare the properties of different materials to select the best candidates for an intended use.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three of the worlda (TM)s leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

This volume contains revised and extended research articles by prominent researchers. Topics covered include operations research, scientific computing, industrial engineering, electrical engineering, communication systems, and industrial applications. The book offers the state-of-the-art advances in engineering technologies and also serves as an excellent reference work for researchers and graduate students working with/on engineering technologies.

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.

In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.

The book focuses on an important step in semiconductor manufacturing package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how the properties of packaging materials interact with each another and explore how to maximize the performance of these materials in regard to package integrity and reliability.

By tying together the disparate elements essential to a semiconductor package, this easy-to-read book shows how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world.

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging.

After introducing basic semiconductor theory and photoluminescence principles, the book focuses on the optical properties of wide-bandgap semiconductors, such as AlN, GaN, and ZnO. It then presents research on narrow-bandgap semiconductors and solid-state lighting. The book also covers the optical properties of semiconductors in the nanoscale regime, including quantum dots and nanocrystals.

This handbook explains how photoluminescence spectroscopy is a powerful and practical analytical tool for revealing the fundamentals of light interaction and, thus, the optical properties of semiconductors. The book shows how luminescent semiconductors are used in lasers, photodiodes, infrared detectors, light-emitting diodes, solid-state lamps, solar energy, and biological imaging.

An Introduction to Electronic Materials for Engineers aims to give a basic understanding and comprehensive overview of a wide range of materials, such as conducting materials, semiconductors, magnetic materials, optical materials, dielectric materials, superconductors, thermoelectric materials and ionic materials. The new chapters added into this latest edition include thin film electronic materials, organic electronic materials and nanostructured materials. These chapters aim to reflect the new developments made in electronic materials and nanotechnology research towards the design and fabrication of modern equipment and electronic devices.This book is designed for undergraduate engineering and technology students who have background knowledge of physics and chemistry, as well as for engineers who work on materials processing or application, or electric/electronic engineering.It emphasizes on the synthesis, performance and application of electronic materials and will enable readers to understand and relate to the devices and materials.

The main focus of the book is to present the effects of nanostructuring on superconducting critical parameters. Optimizing systematically flux and condensate confinement in various nanostructured superconductors, ranging from single nano-cells to their huge arrays, critical fields and currents can be increased up to their theoretical limits, thus drastically improving the potential for practical applications of nanostructured superconductors.

This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering.

The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community. High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.

Focusing on resource awareness in field-programmable gate array (FPGA) design, Applications of Field-Programmable Gate Arrays in Scientific Research covers the principle of FPGAs and their functionality. It explores a host of applications, ranging from small one-chip laboratory systems to large-scale applications in "big science." The book first describes various FPGA resources, including logic elements, RAM, multipliers, microprocessors, and content-addressable memory. It then presents principles and methods for controlling resources, such as process sequencing, location constraints, and intellectual property cores. The remainder of the book illustrates examples of applications in high-energy physics, space, and radiobiology. Throughout the text, the authors remind designers to pay attention to resources at the planning, design, and implementation stages of an FPGA application, in order to reduce the use of limited silicon resources and thereby reduce system cost. Supplying practical know-how on an array of FPGA application examples, this book provides an accessible overview of the use of FPGAs in data acquisition, signal processing, and transmission. It shows how FPGAs are employed in laboratory applications and how they are flexible, low-cost alternatives to commercial data acquisition systems. Web Resource A supporting website at http: //scipp.ucsc.edu/hartmut/FPGA offers more details on FPGA programming and usage. The site contains design elements of the case studies from the book, including VHDL code, detailed schematics of selected projects, photographs, and screen shots.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: * Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges * Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors * Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics * Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes * Introduces novel technologies for the measurement and evaluation of material quality and device properties * Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientist

Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe: C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models. Readership: R&D professionals and modeling/SPICE engineers in the semiconductor industry; graduate, research students and faculties at universities