Sensors for Stretchable Electronics in Nanotechnology discusses the fabrication of semiconducting materials, simple and cost-effective synthesis, and unique mechanisms that enable the fabrication of fully elastic electronic devices that can tolerate high strain. It reviews specific applications that directly benefit from highly compliant electronics, including transistors, photonic devices, and sensors. Discusses ultra-flexible electronics, highlighting its upcoming significance for the industrial-scale production of electronic goods Outlines the role of nanomaterials in fabricating flexible and multifunctional sensors and their applications in sensor technologies Covers graphene-based flexible and stretchable strain sensors Details various applications including wearable electronics, chemical sensors for detecting humidity, environmental hazards, pathogens, and biological warfare agents, and biosensors for detecting vital signals This book is a valuable resource for students, scientists, and professionals working in the research areas of sensor technologies, nanotechnology, materials science, chemistry, physics, biological and medical sciences, the healthcare industry, environmental science, and technology.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three of the worlda (TM)s leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics.In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.

This monograph offers a comprehensive overview of diverse quantization phenomena in layered materials, covering current mainstream experimental and theoretical research studies, and presenting essential properties of layered materials along with a wealth of figures. This book illustrates commonly used synthesis methods of these 2D materials and compares the calculated results and experimental measurements, including novel features not yet reported. The book also discusses experimental measurements of magnetic quantization, theoretical modeling for studying systems and covers diversified magneto-electronic properties, magneto-optical selection rules, unusual quantum Hall conductivities, and single- and many-particle magneto-Coulomb excitations. Rich and unique behaviors are clearly revealed in few-layer graphene systems with distinct stacking configuration, stacking-modulated structures, silicon-doped lattices, bilayer silicene/germanene systems with the bottom-top and bottom-bottom buckling structures, monolayer and bilayer phosphorene systems, and quantum topological insulators. The generalized tight-binding model, the static and dynamic Kubo formulas, and the random-phase approximation are developed/modified to thoroughly explore the fundamental properties and propose the concise physical pictures. Different high-resolution experimental measurements are discussed in detail, and they are consistent with the theoretical predictions. Aimed at readers working in materials science, physics, and engineering this book should be useful for potential applications in energy storage, electronic devices, and optoelectronic devices.

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.

In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.

The book focuses on an important step in semiconductor manufacturing package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how the properties of packaging materials interact with each another and explore how to maximize the performance of these materials in regard to package integrity and reliability.

By tying together the disparate elements essential to a semiconductor package, this easy-to-read book shows how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world.

The Department of Electronics and Communication Engineering of KIET Group of Institutions, Delhi-NCR organized the 4th International Conference ICCE-2020 during November 28-29, 2020. Information compiled in this book is based on the 114 research papers of excellent quality covering different domains of Electronics and Communication Engineering, Computer Science Engineering, Information Technology, Electrical Engineering, Electronics and Instrumentation Engineering. The subject areas treated in the book are: Satellite, Radar and Microwave Techniques, Secure, Smart, and Reliable Networks, Next Generation Networks, Devices & Circuits, Signal & Image Processing, New Emerging Technologies, having the central focus on Recent Trends in Communication & Electronics (ICCE-2020). In addition, a few themes based on Special Sessions have also been conducted in ICCE-2020. The objective of the book resulting from the 4th International Conference on Recent Trends in Communication & Electronics (ICCE-2020) is to provide a resource for the study and research work for an interested audience comprising of researchers, students, audience, and practitioners in the areas of Communications & Computing Systems.

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging.

After introducing basic semiconductor theory and photoluminescence principles, the book focuses on the optical properties of wide-bandgap semiconductors, such as AlN, GaN, and ZnO. It then presents research on narrow-bandgap semiconductors and solid-state lighting. The book also covers the optical properties of semiconductors in the nanoscale regime, including quantum dots and nanocrystals.

This handbook explains how photoluminescence spectroscopy is a powerful and practical analytical tool for revealing the fundamentals of light interaction and, thus, the optical properties of semiconductors. The book shows how luminescent semiconductors are used in lasers, photodiodes, infrared detectors, light-emitting diodes, solid-state lamps, solar energy, and biological imaging.

This book reports the basics of hybrid phosphor materials, their synthesis routes and their special properties and characterization techniques. It gives the reader information about the natural origins and development of hybrid materials, which are developed by combining inorganic and organic species in one material interface-determined materials. The book provides a general classification of hybrid materials, wherein inorganic materials modified by organic moieties are distinguished from organic materials or matrices modified by inorganic constituents. It gives a focus to the functionalization of organic materials by inorganic additives. The application areas covered include optoelectronic field, sensor applications, biological and environmental applications.

Structure and Concentration of Point Defects in Selected Spinels and Simple Oxides presents diagrams and numerical data of important properties of spinels and oxides based on experimental results published in the literature. The values of many parameters presented can be used for optimization of preparation of new systems, to predict the practical properties of these systems. Applications include electronic devices, new metallic alloys with improved corrosion resistance, new ceramic materials, and novel catalysts, particularly for oxygen evolution and reduction reactions. Organized into four comprehensive parts, the authors present the problem of the structure and concentration of ionic and electronic defects in magnetite and hausmannite, pure and doped with M3+ cations, and in spinels exhibiting magnetic properties and high electric conductance. Additional Features include: Includes 236 figures presenting equilibrium diagrams of point defects and other useful details related to stoichiometric and nonstoichiometric spinels and oxides. Details novel methods of calculation of equilibria involving point defects. Collects scattered data published in nearly 500 original articles since the 1950s on spinels and oxides in one useful volume. Building upon the data presented, this book is an indispensable reference for material scientists and engineers developing new metal or oxide-based systems can easily calculate other useful parameters and compare the properties of different materials to select the best candidates for an intended use.

Focusing on resource awareness in field-programmable gate array (FPGA) design, Applications of Field-Programmable Gate Arrays in Scientific Research covers the principle of FPGAs and their functionality. It explores a host of applications, ranging from small one-chip laboratory systems to large-scale applications in "big science." The book first describes various FPGA resources, including logic elements, RAM, multipliers, microprocessors, and content-addressable memory. It then presents principles and methods for controlling resources, such as process sequencing, location constraints, and intellectual property cores. The remainder of the book illustrates examples of applications in high-energy physics, space, and radiobiology. Throughout the text, the authors remind designers to pay attention to resources at the planning, design, and implementation stages of an FPGA application, in order to reduce the use of limited silicon resources and thereby reduce system cost. Supplying practical know-how on an array of FPGA application examples, this book provides an accessible overview of the use of FPGAs in data acquisition, signal processing, and transmission. It shows how FPGAs are employed in laboratory applications and how they are flexible, low-cost alternatives to commercial data acquisition systems. Web Resource A supporting website at http: //scipp.ucsc.edu/hartmut/FPGA offers more details on FPGA programming and usage. The site contains design elements of the case studies from the book, including VHDL code, detailed schematics of selected projects, photographs, and screen shots.

This book covers theoretical and practical aspects of all major steps in the fabrication sequence. This book can be used conveniently in a semester length course on integrated circuit fabrication. This text can also serve as a reference for practicing engineer and scientist in the semiconductor industry. IC Fabrication are ever demanding of technology in rapidly growing industry growth opportunities are numerous. A recent survey shows that integrated circuit currently outnumber humans in UK, USA, India and China. The spectacular advances in the development and application of integrated circuit technology have led to the emergence of microelectronic process engineering as an independent discipline. Integrated circuit fabrication text books typically divide the fabrication sequence into a number of unit processes that are repeated to form the integrated circuit. The effect is to give the book an analysis flavor: a number of loosely related topics each with its own background material. Note: T& F does not sell or distribute the Hardback in India, Pakistan, Nepal, Bhutan, Bangladesh and Sri Lanka.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: * Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges * Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors * Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics * Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes * Introduces novel technologies for the measurement and evaluation of material quality and device properties * Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientist

This descriptive textbook provides an in-depth look at the theories and process technologies necessary for understanding modern power semiconductor devices, i.e. from the fundamentals of junction electrostatics, p-n junction devices, unipolar MOSFET, bipolar IGBT, and superjunction devices to their associated silicon wafer process technology. State-of-the-art devices based on current research and development are included in the book to widen the scope for future device generation. The detailed structure and performance merit of the devices are also presented, together with laboratory measurements and SEM photographs. Examples used in the book are based mainly on actual fabricated devices, with the process steps described in clear detail. This book is useful for senior-year undergraduate courses on power semiconductor or power electronic devices, as well as for graduate-level courses, especially those focusing on advanced device development and design aspects. Device designers and researchers will also find this book a good reference in their work.

This second edition of Real-Time Embedded Multithreading contains the fundamentals of developing real-time operating systems and multithreading with all the new functionality of ThreadX Version 5. ThreadX has been deployed in approximately 500 million devices worldwide. General concepts and terminology are detailed along with problem solving of common pitfalls and problems. The features and services of ThreadX are reviewed. The references to a specific processor have been removed to allow for the book to be technology agnostic and applicable to all types of microprocessors that the reader may be working with. Two e-book supplements will be available with registration of your book at www.newnespress.com, the first on ARM processors and the second, ColdFire processors.

The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community. High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.

This book presents recent advances in experimental and theoretical research on energy materials, focusing on materials that can potentially be used in the production of solar cells, hydrogen and energy storage devices. It discusses in detail the latest synthetic methods, processes, characterization methods and applications of materials like perovskite materials, metal sulfides, nanomaterials, and two-dimensional, transition metal dichalcogenides.

This book provides a comprehensive look at one-dimensional (1D) mesoporous inorganic nanomaterials. Beginning with a systematic presentation of their characterization using advanced electron microscopy techniques, the book discusses how to design the growth of 1D nanomaterials in order to achieve different, application-targeted morphologies such as nanowires, nanorods, nanofibers, nanotubes, and nanobelts. Subsequently, the book systematically summarizes current state-of-the-art research activities, encompassing energy conversion and storage, catalysis, sensing, and adsorption. The book concludes with a forward-looking summary of the different prospects of these materials for novel energy applications, as well as the challenges faced regarding their mass production, cost-effective synthesis strategies, and a deep understanding of the physics involved in the microstructure-dependent performance. Featuring broad and up-to-date coverage of this rapidly growing field, this book is useful for researchers working at the intersections of materials science, chemistry, and advanced energy devices.

This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A."

A detailed study of the science, engineering and applications of terahertz technology, based on room-temperature solid-state devices, which are seen as the key technology for wider applications in this frequency range. The relative merits of electronic and optical devices are discussed and new device principles identified. Issues of terahertz circuit design, implementation and measurement are complemented by chapters on current and future applications in communications, sensing and remote surveillance. Audience: The unique coverage of all aspects of terahertz technology will appeal to both new and established workers in the field, as well as providing a survey for the interested reader.

Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance parameters, materials of individual layers, their molecular structures, basics of pi-conjugated semiconducting materials and their properties, OTFT charge transport phenomena and fabrication techniques. It includes applications of OTFTs such as single and dual gate OTFT based inverter circuits along with bootstrap techniques, SRAM cell designs based on different material and circuit configurations, light emitting diodes (LEDs). Besides this, application of dual gate OTFT in the logic gate, shift register, Flip-Flop, counter circuits will be included as well.

Filling the gap in the market dedicated to PLL structures for power systems

Internationally recognized expert Dr. Masoud Karimi-Ghartemani brings over twenty years of experience working with PLL structures to "Enhanced Phase-Locked Loop Structures for Power and Energy Applications," the only book on the market specifically dedicated to PLL architectures as they apply to power engineering. As technology has grown and spread to new devices, PLL has increased in significance for power systems and the devices that connect with the power grid. This book discusses the PLL structures that are directly applicable to power systems using simple language, making it easily digestible for a wide audience of engineers, technicians, and graduate students.

Enhanced phase-locked loop (EPLL) has become the most widely utilized architecture over the past decade, and many books lack explanation of the structural differences between PLL and EPLL. This book discusses those differences and also provides detailed instructions on using EPLL for both single-phase applications and three-phase applications. The book's major topics include: A basic look at PLL and its standard structureA full explanation of EPLLEPLL extensions and modificationsDigital implementation of EPLLExtensions of EPLL to three-phase structures

Dr. Karimi-Ghartemani provides basic analysis that helps readers understand each of the structures presented without requiring complicated mathematical proofs. His book is filled with illustrated examples and simulations that connect theory to the real world, making "Enhanced Phase-Locked Loop Structures for Power and Energy Applications" an ideal reference for anyone working with inverters, rectifiers, and related technologies.

Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression.The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 - November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz.This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.