Master Today's Best Practices for Building Reusable .NET Frameworks, Libraries, and Components ".NET Core [contains] advances important to cloud application developers: performance, resource utilization, container support, and others. This third edition of Framework Design Guidelines adds guidelines related to changes that the .NET team adopted during transition from the world of client-server application to the world of the Cloud." -From the Foreword by Scott Guthrie Framework Design Guidelines has long been the definitive guide to best practices for developing components and component libraries in Microsoft .NET. Now, this third edition has been fully revised to reflect game-changing API design innovations introduced by Microsoft through eight recent updates to C#, eleven updates to .NET Framework, and the emergence and evolution of .NET Core. Three leading .NET architects share the same guidance Microsoft teams are using to evolve .NET, so you can design well-performing components that feel like natural extensions to the platform. Building on the book's proven explanatory style, the authors and expert annotators offer insider guidance on new .NET and C# concepts, including major advances in asynchronous programming and lightweight memory access. Throughout, they clarify and refresh existing content, helping you take full advantage of best practices based on C# 8, .NET Framework 4.8, and .NET Core. Discover which practices should always, generally, rarely, or never be used-including practices that are no longer recommended Learn the general philosophy and fundamental principles of modern framework design Explore common framework design patterns with up-to-date C# examples Apply best practices for naming, types, extensibility, and exceptions Learn how to design libraries that scale in the cloud Master new async programming techniques utilizing Task and ValueTask Make the most of the Memory and Span types for lightweight memory access This guide is an indispensable resource for everyone who builds reusable .NET-based frameworks, libraries, or components at any scale: large system frameworks, medium-size reusable layers of large distributed systems, extensions to system frameworks, or even small shared components. Register your book for convenient access to downloads, updates, and/or corrections as they become available. See inside book for details.

Internet of Things (IoT) enabled technology is evolving healthcare from conventional hub-based systems to more personalized eHealth systems, enabling faster and safer preventive care, lower overall cost, improved patient-centric practice and enhanced sustainability. Efficient IoT-enabled eHealth systems can be realized by providing highly customized access to rich medical information and efficient clinical decisions to each individual with unobtrusive monitoring. Wireless medical sensor networks (WMSNs) are at the heart of this concept, and their development is a key issue if such a concept is to achieve its potential. This book addresses the major challenges in realizing WMSNs in forthcoming IoT-based eHealth systems. Challenges vary from cost and energy efficiency to security and service quality, and to tackle such challenges WMSNs must meet certain expectations and requirements such as size constraints, manufacturing costs and resistance to environmental factors existing at deployment locations. Reflecting this the book focuses on both design and implementation aspects. Topics covered include the impact of medical sensor networks in smart-cities; an evaluation of mobile patient monitoring technologies; overview of wireless sensor devices in medical applications; cyber security issues in WMSNs and eHealth; smart hospital rooms and automated systems; medical sensor capabilities in smart cloud networks; swarm intelligence based medical diagnosis systems; and smart systems and device for the blind.

Covers major areas including materials, physics, processes, and applications of flexible electronics. Includes homework problems for readers to understand concepts in an easy manner. Discusses types of materials including flexible silicon, metal oxides and organic semiconductors in detail. Applications of flexible electronics in displays, solar cells and batteries discusses in detail Covers a section on Stretchable Electronics.

This comprehensive text covers the basic physics of the solid state starting at an elementary level suitable for undergraduates but then advancing, in stages, to a graduate and advanced graduate level. In addition to treating the fundamental elastic, electrical, thermal, magnetic, structural, electronic, transport, optical, mechanical and compositional properties, we also discuss topics like superfluidity and superconductivity along with special topics such as strongly correlated systems, high-temperature superconductors, the quantum Hall effects, and graphene. Particular emphasis is given to so-called first principles calculations utilizing modern density functional theory which for many systems now allow accurate calculations of the electronic, magnetic, and thermal properties.

Discusses latest updates in the field of ultra-low power semiconductor transistors. Provides both experimental and analytical solutions for TFETs and NCFETs. Presents the synthesis and fabrication of FinFETs. Gives out details of 2D Materials and 2D transistors. Explores the application of FETs for biosensing in healthcare field.

Shear Thickening Fluid: Theory and Applications provides a complete reference on shear thickening fluid (STF) and STF applications for engineers, researchers, and scientists. STF rheology is discussed in terms of several factors, including suspension medium, particle size, particle shape, and environmental conditions. Single-phase STF is discussed, and the novel concept of multi-phase STF is examined by considering various fillers in this smart fluid. Prominent applications of STF are categorized as multi-functional systems, adaptive damping devices, surface finishing operations, and protective structures, and the applications are described by discussing the smart behavior of STF. 

Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.

Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Over the past two decades, technologies for microsystems fabrication have made considerable progress. This has made possible a large variety of new commercial devices ranging, for example, from integrated pressure and acceleration microsensors to active micromirror arrays for image projection. In the near future, there will be a number of new devices, which will be commercialized in many application areas. The field of microsystems is characterized by its wide diversity, which requires a multidisciplinary approach for design and processes as well as in application areas. Although there is a common technological background derived from integrated circuits, it is clear that microsystems will require additional application-specific technologies. Since most microsystem technologies are based on batch processing and dedicated to mass production, prototyping is likely to be an expensive and time-consuming step. It is recognized that standardization of the processes as well as of the design tools will definitely help reduce the entry cost of microsystems. This creates a very challenging situation for the design, modeling and simulation of microsystems. Methodology for the Modeling and Simulation of Microsystems is the first book to give an overview of the problems associated with modeling and simulation of microsystems. It introduces a new methodology, which is supported by several examples. It should provide a useful starting point for both scientists and engineers seeking background information for efficient design of microsystems.

Presents the latest global achievements in the processing and applications of high-Tc superconductors Discusses large-scale applications of high-temperature superconducting materials Contains contributions from several eminent scientists

Discusses the method to grow not only graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments, on Cu interconnects in order to obtain good-quality and reliable interconnects Provides the basic understanding of graphene-Cu interaction mechanism Introduces a novel graphene growth process and graphene-assisted electroless copper plating

This textbook is aimed at second-year graduate students in Physics, Electrical Engineer ing, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Ham iltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quan tization and elementary excitations in solids, of the dielectric properties of semicon ductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the 'tricky' transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green's functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

This book reviews the state of the art in the use of organic materals as physical, chemical and biomedical sensors in a variety of application settings. Topics covered include organic semiconductors for chemical and physical sensing; conducting polymers in sensor applications; chemically functionalized organic semiconductors for highly selective sensing; composite organic-inorganic sensors; artificial skin applications; organic thin film transistor strain gauges for biomedical applications; OTFT infrared sensors for touchless human-machine interaction; smart fabric sensors and e-textile technologie; image capture with organic sensors; organic gas sensors and electronic noses; electrolyte gated organic transistors for bio-chemical sensing; ion-selective organic electrochemical transistors; DNA biosensors; metabolic organic sensors; and conductive polymer based sensors for biomedical applications.

Nanofabrication is critical to the realization of potential benefits in the field of electronics, bioengineering and material science. One enabling technology in nanofabrication is Tip-Based Nanofabrication, which makes use of functionalized micro-cantilevers with nanoscale tips. Tip-Based Nanofabrication: Fundamentals and Applications discusses the development of cantilevered nanotips and how they evolved from scanning probe microscopy and are able to manipulate environments at nanoscale on substrates generating different nanoscale patterns and structures. Also covered are the advantages of ultra-high resolution capability, how to use tip based nanofabrication technology as a tool in the manufacturing of nanoscale structures, single-probe tip technologies, multiple-probe tip methodology, 3-D modeling using tip based nanofabrication and the latest in imaging technology.

Black phosphorus (BP)-based two-dimensional (2D) nanomaterials are used as components in practical industrial applications in biomedicine, electronics, and photonics. There is a need to controllably shape engineered scalable structures of 2D BP building blocks, and their assembly/organization is desired for the formation of three-dimensional (3D) forms such as macro and hybrid architectures, as it is expected that these architectures will deliver even better materials performance in applications. Semiconducting Black Phosphorus: From 2D Nanomaterial to Emerging 3D Architecture provides an overview of the various synthetic strategies for 2D BP single-layer nanomaterials, their scalable synthesis, properties, and assemblies into 3D architecture. The book covers defect engineering and physical properties of black phosphorous; describes different strategies for the development of 2D nanostructures of BP with other species such as polymers, organic molecules, and other inorganic materials; offers a comparative study of 3D BP structures with other 3D architectures such as dichalcogenides (TMDs, graphene, and boron nitride); and discusses in detail applications of 3D macrostructures of BP in various fields such as energy, biomedical, and catalysis. This is an essential reference for researchers and advanced students in materials science and chemical, optoelectronic, and electrical engineering.

A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers

The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques.

Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:

• SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects
• Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP
• Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits

With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications

The book addresses various approaches to television projection imaging on large screens using lasers. Results of theoretical and experimental studies of an acousto-optic projection system operating on the principle of projecting an image of an entire amplitude-modulated television line in a single laser pulse are presented. Characteristic features of image formation and requirements for individual components are discussed. Particular attention is paid to nonlinear distortions of the image signal, which show up most severely at low modulation signal frequencies. The feasibility of improving the process efficiency and image quality using acousto-optic modulators and pulsed lasers is studied.

Iptycenes Chemistry: From Synthesis to Applications provides a comprehensive overview of the development of iptycene chemistry in the past seventy years. This book covers: (1) the basic nomenclature and general properties of iptycenes and their derivatives; (2) the synthesis and functionalization reactions of triptycenes, pentiptycenes, higher iptycenes, heterotriptycenes, and homotriptycenes; (3) the methods for the preparation of iptycene-based polymers with different types; and (4) the applications of iptycenes and their derivatives in molecular machines, materials science, host-guest chemistry, self-assembly, coordination chemistry, physical organic chemistry, medicinal chemistry, and so on. Consequently, such a book is not only helpful to researchers working in iptycene chemistry, but can also facilitate future research in wide areas.

When basic researchers started working on semiconductors during the late nineteen thirties and on integrated circuits at the end of the nineteen fifties, they did not know that their work would change the lives of future generations. Very few people at that time recognized the significance of, perhaps, the most important invention of the century. Historians have assigned the invention of integrated circuits to Jack Kilby and Robert Noyce. In this book, the author argues that the group of inventors was much larger. This richly illustrated account is a personal recollection of the development of integrated circuits and personalities a" such as Russell Ohl, Karl Lark-Horovitz, William Shockley, Carl Frosch, Lincoln Derick, Calvin Fuller, Kurt Lehovec. Jean Hoerni, Sheldon Roberts, Jay Last, Isy Haas, Bob Norman, Dave Allison, Jim Nall, Tom Longo, Bob Widlar, Dave Talbert, Frank Wanlass, and Federico Faggin. Here is the first comprehensive behind-the-scenes account of the history of the integrated circuit, the microelectronics industry, and the people closely involved in the development of the transistor and the integrated circuit.

"Your book is going to make a major contribution to semiconductor history. You and I agree that, while the world loves a hero, semiconductor progress depended on the efforts and ideas of a large number of people, and that moving forward depended on contributors going back a few decades in some cases. Also, as is the case with most inventions, a number of people with access to the same pool of common knowledge were working independently at the same time to put it all together and to make the necessary extensions to the existing technology and whorealized that the time was right for society to accept the new concepts. Your diligent research points all of this out."

Dr. Jay Last, Former Shockley Laboratories employee, co-founder of Fairchild Semiconductor, co-founder of Amelco Semiconductor, and manager of Fairchilda (TM)s group which designed and produced the world first planar integrated circuit.

"Bo Lojek presents a remarkable document of the most important and significant technical development of our times. He describes in astounding detail the engineering efforts of modern microelectronics. He concentrates on the history of silicon semiconductor devices. Californiaa (TM)s "Silicon Valley" is the center of attention, together with its ancestry of transistor invention at Bell Laboratories. He has collected a wealth of illustrative documentation, gives incisive insight into the lives of the main actors and shows the often tragic fates of the engineers and businessmen. He does not hide his firm belief in the individual engineer and warns of the retarding influence of present-day political correctness."

Dr. Hans J. Queisser, Former Shockley Semiconductor scientist and retired director of the Max-Planck-Institute for Solids, Stuttgart, Germany.

"The technical history of the semiconductor history rivals the 1849 California Gold Rush as a period filled with excitement and opportunity. Although I cannot first hand validate its complete accuracy, I enthusiastically encourage you to read the collected facts, opinions, and views of an author who was actually part of this amazing period, viewing it as a successful practicing Engineer during this "gold rush" - like hey-day of the semiconductor industry.

For educators andtechnologists you will find this collection of data, facts, and opinions, collected and observed first hand by the author, fascinating! It is a tough read for others due to the writing experience of the author and its technical focus."

John F. Gifford, Former Fairchild Semiconductor Marketing Manager of Linear Integrated Circuits, co-founder of Advanced Micro Devices, and President and Chief Executive Officer of Maxim Integrated Products.

"Bo Lojek gets it right! There are few industries as dynamic as semiconductors and the history of the semiconductor industry is still unfolding. This book gives the history of people, places and technology that resulted in todaya (TM)s semiconductor industry. I particularly like the inclusion of many technical pieces in the book."

Robert Dobkin, Former National Semiconductor Director of Advanced Circuit Development and co-founder and Chief Technical Officer of Linear Technology Corporation.