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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
The present book focuses on recent advances methods and applications in photovoltaic (PV) systems. The book is divided into two parts: the first part deals with some theoretical, simulation and experiments on solar cells, including efficiency improvement, new materials and behavior performances. While the second part of the book devoted mainly on the application of advanced methods in PV systems, including advanced control, FPGA implementation, output power forecasting based artificial intelligence technique (AI), high PV penetration, reconfigurable PV architectures and fault detection and diagnosis based AI. The authors of the book trying to show to readers more details about some theoretical methods and applications in solar cells and PV systems (eg. advanced algorithms for control, optimization, power forecasting, monitoring and fault diagnosis methods). The applications are mainly carried out in different laboratories and location around the world as projects (Algeria, KSA, Turkey, Morocco, Italy and France). The book will be addressed to scientists, academics, researchers and PhD students working in this topic. The book will help readers to understand some applications including control, forecasting, monitoring, fault diagnosis of photovoltaic plants, as well as in solar cells such as behavior performances and efficiency improvement. It could be also be used as a reference and help industry sectors interested by prototype development.
Advances in Imaging and Electron Physics, Volume 213, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains.
This monograph presents an intuitive theory of trial wave functions for strongly interacting fermions in fractional quantum Hall states. The correlation functions for the proposed fermion interactions follow a novel algebraic approach that harnesses the classical theory of invariants and semi-invariants of binary forms. This approach can be viewed as a fitting and far-reaching generalization of Laughlin's approach to trial wave functions. Aesthetically viewed, it illustrates an attractive symbiosis between the theory of invariants and the theory of correlations. Early research into numerical diagonalization computations for small numbers of electrons shows strong agreement with the constructed trial wave functions.The monograph offers researchers and students of condensed matter physics an accessible discussion of this interesting area of research.
This book highlights the fundamental principles of optical fiber technology required for understanding modern high-capacity lightwave telecom networks. Such networks have become an indispensable part of society with applications ranging from simple web browsing to critical healthcare diagnosis and cloud computing. Since users expect these services to always be available, careful engineering is required in all technologies ranging from component development to network operations. To achieve this understanding, this book first presents a comprehensive treatment of various optical fiber structures and diverse photonic components used in optical fiber networks. Following this discussion are the fundamental design principles of digital and analog optical fiber transmission links. The concluding chapters present the architectures and performance characteristics of optical networks.
This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.
This book presents and facilitates new research and development results with hot topics in the thermoelectric generators (TEGs) field. Topics include: novel thin film; multilayer, composite and nanostructured thermoelectric materials; simulation of phenomena related to thermoelectricity; thermoelectric thin film and multilayer materials manufacturing technologies; measurement techniques for characterization; thermoelectric generators; and the simulation, modeling, design, thermal, and mechanical degradation problems. This book helps researchers tackle the challenges that still remain in creating cheap and effective TEGs and presents the latest trends and technologies in development and production of advanced thermoelectric generation devices.
This thesis investigates passively mode-locked semiconductor lasers by numerical methods. The understanding and optimization of such devices is crucial to the advancement of technologies such as optical data communication and dual comb spectroscopy. The focus of the thesis is therefore on the development of efficient numerical models, which are able both to perform larger parameter studies and to provide quantitative predictions. Along with that, visualization and evaluation techniques for the rich spatio-temporal laser dynamics are developed; these facilitate the physical interpretation of the observed features. The investigations in this thesis revolve around two specific semiconductor devices, namely a monolithically integrated three-section tapered quantum-dot laser and a V-shaped external cavity laser. In both cases, the simulations closely tie in with experimental results, which have been obtained in collaboration with the TU Darmstadt and the ETH Zurich. Based on the successful numerical reproduction of the experimental findings, the emission dynamics of both lasers can be understood in terms of the cavity geometry and the active medium dynamics. The latter, in particular, highlights the value of the developed simulation tools, since the fast charge-carrier dynamics are generally not experimentally accessible during mode-locking operation. Lastly, the numerical models are used to perform laser design explorations and thus to derive recommendations for further optimizations.
Explore the intersection of computer science, physics, and electrical and computer engineering with this discussion of the engineering of quantum computers In Principles of Superconducting Quantum Computers, a pair of distinguished researchers delivers a comprehensive and insightful discussion of the building of quantum computing hardware and systems. Bridging the gaps between computer science, physics, and electrical and computer engineering, the book focuses on the engineering topics of devices, circuits, control, and error correction. Using data from actual quantum computers, the authors illustrate critical concepts from quantum computing. Questions and problems at the end of each chapter assist students with learning and retention, while the text offers descriptions of fundamentals concepts ranging from the physics of gates to quantum error correction techniques. The authors provide efficient implementations of classical computations, and the book comes complete with a solutions manual and demonstrations of many of the concepts discussed within. It also includes: A thorough introduction to qubits, gates, and circuits, including unitary transformations, single qubit gates, and controlled (two qubit) gates Comprehensive explorations of the physics of single qubit gates, including the requirements for a quantum computer, rotations, two-state systems, and Rabi oscillations Practical discussions of the physics of two qubit gates, including tunable qubits, SWAP gates, controlled-NOT gates, and fixed frequency qubits In-depth examinations of superconducting quantum computer systems, including the need for cryogenic temperatures, transmission lines, S parameters, and more Ideal for senior-level undergraduate and graduate students in electrical and computer engineering programs, Principles of Superconducting Quantum Computers also deserves a place in the libraries of practicing engineers seeking a better understanding of quantum computer systems.
This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and information are interconnected and are essential elements for the development of human society. Transmission, processing and storage of information requires energy consumption, while the efficient use and access to new energy sources requires new information (ideas and expertise) and the design of novel systems such as photovoltaic devices, fuel cells and batteries. Semiconductor physics creates the knowledge base for the development of information (computers, cell phones, etc.) and energy (photovoltaic) technologies. The exchange of ideas and expertise between these two technologies is critical and expands beyond semiconductors. Continued progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions, new materials are being introduced into electronics manufacturing at an unprecedented rate, and alternative technologies to mainstream CMOS are evolving. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Semiconductor Nanotechnology features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors, quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.
This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique approach of starting with the statistical mechanics of quantum ideal gases and successively adding and clarifying elements and techniques indispensible for understanding it. They include the spin-statistics theorem, second quantization, density matrices, the Bloch-De Dominicis theorem, the variational principle in statistical mechanics, attractive interaction and bound states. Ample examples of their usage are also provided in terms of topics from advanced statistical mechanics such as two-particle correlations of quantum ideal gases, derivation of the Hartree-Fock equations, and Landau's Fermi-liquid theory, among others. With these preliminaries, the fundamental mean-field equations of superconductivity are derived with maximum mathematical clarity based on a coherent state in terms of the Cooper-pair creation operator, a quasiparticle field for describing the excitation and the variational principle in statistical mechanics. They have the advantage that the phase coherence due to the Cooper-pair condensation can be clearly seen making the superfluidity comprehensible naturally. Subsequently, they are applied to homogeneous cases to describe the BCS theory for classic s-wave superconductors and its extension to the p-wave superfluidity of 3He. Later, the mean-field equations are simplified to the Eilenberger and Ginzburg-Landau equations so as to describe inhomogeneous superconductivity such as Abrikosov's flux-line lattice concisely and transparently. Chapters provide the latest studies on the quasiclassical theory of superconductivity and a discovery of p-wave superfluidity in liquid 3He. The book serves as a standard reference for advanced courses of statistical mechanics with exercises along with detailed answers.
This book puts forward a modern classification theory for superconducting gap nodes, whose structures can be observed by experiments and are essential for understanding unconventional superconductivity. In the first part of the book, the classification method, based on group theory and K theory, is introduced in a step-by-step, pedagogical way. In turn, the latter part presents comprehensive classification tables, which include various nontrivial gap (node) structures, which are not predicted by the Sigrist-Ueda method, but are by the new method. The results obtained here show that crystal symmetry and/or angular momentum impose critical constraints on the superconducting gap structures. Lastly, the book lists a range of candidate superconductors for the nontrivial gap nodes. The classification methods and tables presented here offer an essential basis for further investigations into unconventional superconductivity. They indicate that previous experimental studies should be reinterpreted, while future experiments should reflect the new excitation spectrum.
Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics.
This book focuses on the calculus of variations, including fundamental theories and applications. This textbook is intended for graduate and higher-level college and university students, introducing them to the basic concepts and calculation methods used in the calculus of variations. It covers the preliminaries, variational problems with fixed boundaries, sufficient conditions of extrema of functionals, problems with undetermined boundaries, variational problems of conditional extrema, variational problems in parametric forms, variational principles, direct methods for variational problems, variational principles in mechanics and their applications, and variational problems of functionals with vector, tensor and Hamiltonian operators. Many of the contributions are based on the authors' research, addressing topics such as the extension of the connotation of the Hilbert adjoint operator, definitions of the other three kinds of adjoint operators, the extremum function theorem of the complete functional, unified Euler equations in variational methods, variational theories of functionals with vectors, modulus of vectors, arbitrary order tensors, Hamiltonian operators and Hamiltonian operator strings, reconciling the Euler equations and the natural boundary conditions, and the application range of variational methods. The book is also a valuable reference resource for teachers as well as science and technology professionals.
Tin Oxide Materials: Synthesis, Properties, and Applications discusses the latest in metal oxides, an emerging area in electronic materials. As more is learned about this important materials system, more functionalities and applications have been revealed. This key reference on the topic covers important material that is ideal for materials scientists, materials engineers and materials chemists who have been introduced to metal oxides as a general category of materials, but want to take the next step and learn more about a specific material.
This book presents the most important advances in the class of topological materials and discusses the topological characterization, modeling and metrology of materials. Further, it addresses currently emerging characterization techniques such as optical and acoustic, vibrational spectroscopy (Brillouin, infrared, Raman), electronic, magnetic, fluorescence correlation imaging, laser lithography, small angle X-ray and neutron scattering and other techniques, including site-selective nanoprobes. The book analyzes the topological aspects to identify and quantify these effects in terms of topology metrics. The topological materials are ubiquitous and range from (i) de novo nanoscale allotropes of carbons in various forms such as nanotubes, nanorings, nanohorns, nanowalls, peapods, graphene, etc. to (ii) metallo-organic frameworks, (iii) helical gold nanotubes, (iv) Moebius conjugated polymers, (v) block co-polymers, (vi) supramolecular assemblies, to (vii) a variety of biological and soft-matter systems, e.g. foams and cellular materials, vesicles of different shapes and genera, biomimetic membranes, and filaments, (viii) topological insulators and topological superconductors, (ix) a variety of Dirac materials including Dirac and Weyl semimetals, as well as (x) knots and network structures. Topological databases and algorithms to model such materials have been also established in this book. In order to understand and properly characterize these important emergent materials, it is necessary to go far beyond the traditional paradigm of microscopic structure-property-function relationships to a paradigm that explicitly incorporates topological aspects from the outset to characterize and/or predict the physical properties and currently untapped functionalities of these advanced materials. Simulation and modeling tools including quantum chemistry, molecular dynamics, 3D visualization and tomography are also indispensable. These concepts have found applications in condensed matter physics, materials science and engineering, physical chemistry and biophysics, and the various topics covered in the book have potential applications in connection with novel synthesis techniques, sensing and catalysis. As such, the book offers a unique resource for graduate students and researchers alike.
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for highly efficient charge generation in their application as charge injector and charge generation layer in OLEDs. This book serves as a valuable reference for researchers and as a textbook for graduate students focusing on the study and development of OLED for display and lighting.
Electrical Engineering Advanced Theory of Semiconductor Devices Semiconductor devices are ubiquitous in today's world and are found increasingly in cars, kitchens and electronic door locks, attesting to their presence in our daily lives. This comprehensive book provides the fundamentals of semiconductor device theory from basic quantum physics to computer-aided design. Advanced Theory of Semiconductor Devices will improve your understanding of computer simulation of devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p--n junction diodes. Close attention is also given to innovative treatments of quantum-well laser diodes and hot electron effects in silicon technology. This in-depth book is written for engineers, graduate students, and research scientists in solid-state electronics who want to gain a better understanding of the principles underlying semiconductor devices.
What are the physical mechanisms that underlie the efficient generation and transfer of energy at the nanoscale? Nature seems to know the answer to this question, having optimised the process of photosynthesis in plants over millions of years of evolution. It is conceivable that humans could mimic this process using synthetic materials, and organic semiconductors have attracted a lot of attention in this respect. Once an organic semiconductor absorbs light, bound pairs of electrons with positively charged holes, termed `excitons', are formed. Excitons behave as fundamental energy carriers, hence understanding the physics behind their efficient generation and transfer is critical to realising the potential of organic semiconductors for light-harvesting and other applications, such as LEDs and transistors. However, this problem is extremely challenging since excitons can interact very strongly with photons. Moreover, simultaneously with the exciton motion, organic molecules can vibrate in hundreds of possible ways, having a very strong effect on energy transfer. The description of these complex phenomena is often beyond the reach of standard quantum mechanical methods which rely on the assumption of weak interactions between excitons, photons and vibrations. In this thesis, Antonios Alvertis addresses this problem through the development and application of a variety of different theoretical methods to the description of these strong interactions, providing pedagogical explanations of the underlying physics. A comprehensive introduction to organic semiconductors is followed by a review of the background theory that is employed to approach the relevant research questions, and the theoretical results are presented in close connection with experiment, yielding valuable insights for experimentalists and theoreticians alike.
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
Waste Electrical and Electronic Equipment (WEEE) Handbook, Second Edition, is a one-stop reference on current electronic waste legislation initiatives, their impact, and the latest technological considerations for reducing electronic waste (e-waste) and increasing the efficiency of materials recovery. It also provides a wide-range of global and corporate examples and perspectives on the challenges that face specific regions and companies, along with the solutions they are implementing in managing e-waste, offering further insights on how discarded products can be treated. Sections introduce the reader to legislation and initiatives to manage WEEE and discuss technologies for the refurbishment, treatment and recycling of waste electronics. Further sections focus on electronic products that present particular challenges for recyclers, explore sustainable design of electronics and supply chains, discuss national and regional WEEE management schemes, and more.
This monograph is intended for researchers and professionals in the fields of computer science and cybernetics. Nowadays, the areas of computer science and cybernetics (mainly its artificial intelligence branches) are subject to an immense degree of study and are applied in a wide range of technical and industrial projects. The individual chapters of this monograph were developed from a series of invited lectures at the Brno University of Technology in the years 2018 and 2019. The main aim of these lectures was to create an opportunity for students, academics, and professionals to exchange ideas, novel research methods, and new industrial applications in the fields related to soft computing and cybernetics. The authors of these chapters come from around the world and their works cover both new theoretical and application-oriented results from areas such as automation, control, robotics, optimization, statistics, reinforcement learning, image processing, and evolutionary algorithms.
This book takes a fresh look at the work, thoughts, and life of 1956 Nobel Prize winner William B. Shockley. It reconstructs Shockley's upbringing, his patriotic achievements during World War II, his contribution to semiconductor physics - culminating with the epoch-making invention of the transistor - and his views on the social issues of his time. The author's unparalleled access to Shockley's personal documents provides insight into a colorful, yet controversial, man, and also sheds light on the attitudes of other prominent scientists of that era. Shockley was not only an outstanding scientist in his own right but also a fiercely independent thinker in perpetual search of the truth. His contributions to the field known today as microelectronics are enormous and unmatched. This book explores the critical facets of Shockley's life, replete with never-before-published photos and excerpts from his private correspondence and personal notebooks. The book also delves into Shockley's views on genetics and human intelligence. It tells the story of a man beset by an unrelenting rationality, slandered by the popular media, and ultimately alienated by his peers. It discusses his controversial, although sometimes prescient, ideas regarding human genetics, putting these into the context of modern research findings. Today, William Shockley is perhaps just as enigmatic as his work and accomplishments. The author presents a convincing argument that Shockley still has much to say about the issues of our age, and many of his ideas deserve evaluation in the public forum. |
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