This textbook entitled Fundamentals of Perovskite Oxides: Synthesis, Structure, Properties and Applications summarizes the structure, synthesis routes, and potential applications of perovskite oxide materials. Since these perovskite-type ceramic materials offer opportunities in a wide range of fields of science and engineering, the chapters are broadly organized into four sections of perovskite-type oxide materials and technology. Covers recent developments in perovskite oxides Serves as a quick reference of perovskite oxides information Describes novel synthesis routes for nanostructured perovskites Discusses comprehensive details for various crystal structures, synthesis methods, properties, and applications Applies to academic education, scientific research, and industrial R&D for materials research in real-world applications like bioengineering, catalysis, energy conversion, energy storage, environmental engineering, and data storage and sensing This book serves as a handy and practical guideline suitable for students, engineers, and researchers working with advanced ceramic materials.

Over the past two decades, technologies for microsystems fabrication have made considerable progress. This has made possible a large variety of new commercial devices ranging, for example, from integrated pressure and acceleration microsensors to active micromirror arrays for image projection. In the near future, there will be a number of new devices, which will be commercialized in many application areas. The field of microsystems is characterized by its wide diversity, which requires a multidisciplinary approach for design and processes as well as in application areas. Although there is a common technological background derived from integrated circuits, it is clear that microsystems will require additional application-specific technologies. Since most microsystem technologies are based on batch processing and dedicated to mass production, prototyping is likely to be an expensive and time-consuming step. It is recognized that standardization of the processes as well as of the design tools will definitely help reduce the entry cost of microsystems. This creates a very challenging situation for the design, modeling and simulation of microsystems. Methodology for the Modeling and Simulation of Microsystems is the first book to give an overview of the problems associated with modeling and simulation of microsystems. It introduces a new methodology, which is supported by several examples. It should provide a useful starting point for both scientists and engineers seeking background information for efficient design of microsystems.

This textbook is aimed at second-year graduate students in Physics, Electrical Engineer ing, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Ham iltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quan tization and elementary excitations in solids, of the dielectric properties of semicon ductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the 'tricky' transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green's functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

This book provides readers with a detailed overview of second- and third-order nonlinearities in various nanostructures, as well as their potential applications. Interest in the field of nonlinear optics has grown exponentially in recent years and, as a result, there is increasing research on novel nonlinear phenomena and the development of nonlinear photonic devices. Thus, such a book serves as a comprehensive guide for researchers in the field and those seeking to become familiar with it. This text focuses on the nonlinear properties of nanostructured systems that arise as a result of optical wave mixing. The authors present a review of nonlinear optical processes on the nanoscale and provide theoretical descriptions for second and third-order optical nonlinearities in nanostructures such as carbon allotropes, metallic nanostructures, semiconductors, nanocrystals, and complex geometries. Here, the characterization and potential applications of these nanomaterials are also discussed. The factors that determine the nonlinear susceptibility in these systems are identified as well as the influence of physical mechanisms emerging from resonance and off-resonance excitations. In addition, the authors detail the effects driven by important phenomena such as quantum confinement, localized surface plasmon resonance, Fano resonances, bound states, and the Purcell effect on specific nanostructured systems. Readers are provided with a groundwork for future research as well as new perspectives in this growing field.

Highlights Li-ion batteries and Na-ion batteries, as well as lithium sulfur-, aluminum-, and iron-related batteries Describes advanced battery materials and their fundamental properties Addresses challenges to improving battery performance Develops theoretical predictions and experimental observations under a unified quasi-particle framework Targets core issues like stability and efficiencies

Robust Automatic Speech Recognition: A Bridge to Practical Applications establishes a solid foundation for automatic speech recognition that is robust against acoustic environmental distortion. It provides a thorough overview of classical and modern noise-and reverberation robust techniques that have been developed over the past thirty years, with an emphasis on practical methods that have been proven to be successful and which are likely to be further developed for future applications. The strengths and weaknesses of robustness-enhancing speech recognition techniques are carefully analyzed. The book covers noise-robust techniques designed for acoustic models which are based on both Gaussian mixture models and deep neural networks. In addition, a guide to selecting the best methods for practical applications is provided. The reader will: Gain a unified, deep and systematic understanding of the state-of-the-art technologies for robust speech recognition Learn the links and relationship between alternative technologies for robust speech recognition Be able to use the technology analysis and categorization detailed in the book to guide future technology development Be able to develop new noise-robust methods in the current era of deep learning for acoustic modeling in speech recognition

Nanofabrication is critical to the realization of potential benefits in the field of electronics, bioengineering and material science. One enabling technology in nanofabrication is Tip-Based Nanofabrication, which makes use of functionalized micro-cantilevers with nanoscale tips. Tip-Based Nanofabrication: Fundamentals and Applications discusses the development of cantilevered nanotips and how they evolved from scanning probe microscopy and are able to manipulate environments at nanoscale on substrates generating different nanoscale patterns and structures. Also covered are the advantages of ultra-high resolution capability, how to use tip based nanofabrication technology as a tool in the manufacturing of nanoscale structures, single-probe tip technologies, multiple-probe tip methodology, 3-D modeling using tip based nanofabrication and the latest in imaging technology.

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers

The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques.

Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:

• SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects
• Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP
• Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits

With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.

Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.

A benchmark publication, the first edition of the Phosphor Handbook, published in 1998, set the standard for references in the field. The second edition, updated and published in 2007, began exploring new and emerging fields. However, in the last 14 years, since the second edition was published, many notable advances and broader phosphor applications have occurred. Completely revised, updated, and expanded into three separate volumes, this third edition of the Handbook covers the most recent developments in phosphor research, characterization, and applications. This volume on 'Fundamentals of Luminescence' elucidates the theoretical background and fundamental properties of luminescence as applied to solid-state phosphor materials. The book includes the chapters that cover: Basic principles of luminescence, the principal phosphor materials, and their optical properties New developments in principal phosphors in nitrides, perovskite, and silicon carbide Revised lanthanide level locations and its impact on phosphor performance Detailed descriptions of energy transfer and upconversion processes in bulk and nanoscaled particles and core-shell structures Rapid developing organic and polymer luminescent materials and devices

A benchmark publication, the first edition of the Phosphor Handbook, published in 1998, set the standard for references in the field. The second edition, updated and published in 2007, began exploring new and emerging fields. However, in the last 14 years, since the second edition was published, many notable advances and broader phosphor applications have occurred. Completely revised, updated, and expanded into three separate volumes, this third edition of the Handbook covers the most recent developments in phosphor research, characterization, and applications. This volume on 'Novel Phosphors, Synthesis, and Applications' provides the descriptions of synthesis and optical properties of phosphors used in different applications, including the novel phosphors for some newly developed applications. The chapters in this book cover: Various LED-based phosphors and their synthesis and applications Ingenious integrated smart phosphors and their novel optoelectronic and photonic devices Quantum dot, single crystalline, and glass phosphors Upconversion nanoparticles for super-resolution imaging and photonic and biological applications Special phosphors for laser, OLED, energy storage, quantum cutting, thermometry, photosynthesis, AC-driven LED, and solar cells

A benchmark publication, the first edition of the Phosphor Handbook, published in 1998, set the standard for references in the field. The second edition, updated and published in 2007, began exploring new and emerging fields. However, in the last 14 years, since the second edition was published, many notable advances and broader phosphor applications have occurred. Completely revised, updated, and expanded into three separate volumes, this third edition of the Handbook covers the most recent developments in phosphor research, characterization, and applications. This volume on 'Experimental Methods for Phosphor Evaluation and Characterization' addresses the theoretical and experimental methods for phosphor evaluation and characterization. The chapters in the book cover: First principle and DFT analysis of optical, structural, and chemical properties of phosphors Phosphor design and tuning through structure and solid solution Design for IR, NIR, and narrowband emission and thermally stable phosphors and nanophosphors Detailed illustration for measurement of the absolute photoluminescence quantum yield of phosphors Phosphor analysis through photoionization, high pressure, and synchrotron radiation studies

Iptycenes Chemistry: From Synthesis to Applications provides a comprehensive overview of the development of iptycene chemistry in the past seventy years. This book covers: (1) the basic nomenclature and general properties of iptycenes and their derivatives; (2) the synthesis and functionalization reactions of triptycenes, pentiptycenes, higher iptycenes, heterotriptycenes, and homotriptycenes; (3) the methods for the preparation of iptycene-based polymers with different types; and (4) the applications of iptycenes and their derivatives in molecular machines, materials science, host-guest chemistry, self-assembly, coordination chemistry, physical organic chemistry, medicinal chemistry, and so on. Consequently, such a book is not only helpful to researchers working in iptycene chemistry, but can also facilitate future research in wide areas.

The atomic arrangement and subsequent properties of a material are determined by the type and conditions of growth leading to epitaxy, making control of these conditions key to the fabrication of higher quality materials. Epitaxial Growth of Complex Metal Oxides reviews the techniques involved in such processes and highlights recent developments in fabrication quality which are facilitating advances in applications for electronic, magnetic and optical purposes. Part One reviews the key techniques involved in the epitaxial growth of complex metal oxides, including growth studies using reflection high-energy electron diffraction, pulsed laser deposition, hybrid molecular beam epitaxy, sputtering processes and chemical solution deposition techniques for the growth of oxide thin films. Part Two goes on to explore the effects of strain and stoichiometry on crystal structure and related properties, in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films in Part Three.

MXene, a two-dimensional (2D) transition metal carbide, nitride, and carbonitride, was discovered in 2011. MXene has great potential as a cocatalyst in the field of photocatalysis due to its unique properties and structure. MXene-Based Photocatalysts: Fabrication and Applications introduces readers to the fundamentals, preparation, microstructure characterization, and a variety of applications of MXene-based photocatalysts. The book is a comprehensive reference for MXene materials and provides an overview of the current literature on MXene-based photocatalysts. FEATURES Discusses preparation methods of MXenes Describes the morphology and microstructure of MXenes Offers strategies for fabricating MXene-based photocatalysts Details the reaction mechanism of MXene-based photocatalysts Covers applications in photocatalytic water-splitting, photocatalytic CO2 reduction, photocatalytic degradation, photocatalytic nitrogen fixation, and photocatalytic H2O2 production This book serves as an invaluable guide for advanced students, industry professionals, professors, and researchers in the field of materials science and engineering, photocatalysis, energy, and environmental applications.

The success of spintronics - the science and technology of storing, processing, sensing and communicating information using the quantum mechanical spin degree of freedom of an electron - is critically dependent on the ability to inject, detect and manipulate spins in semiconductors either by incorporating ferromagnetic materials into device architectures or by using external magnetic and electric fields. In spintronics, the controlled generation and manipulation of spin polarization in nonmagnetic semiconductors is required for the design of spin-sensitive devices ranging from spin-qubit hosts, quantum memory and gates, quantum teleporters, spin polarizers and filters, spin-field-effect-transistors, and spin-splitters, among others. One of the major challenges of spintronics is to control the creation, manipulation, and detection of spin polarized currents by purely electrical means. Another challenge is to preserve spin coherence in a device for the longest time or over the longest distance in order to produce reliable spintronic processors. These challenges remain daunting, but some progress has been made recently in overcoming some of the steepest obstacles. This book covers some of the recent advances in the field of spintronics using semiconductors.

When basic researchers started working on semiconductors during the late nineteen thirties and on integrated circuits at the end of the nineteen fifties, they did not know that their work would change the lives of future generations. Very few people at that time recognized the significance of, perhaps, the most important invention of the century. Historians have assigned the invention of integrated circuits to Jack Kilby and Robert Noyce. In this book, the author argues that the group of inventors was much larger. This richly illustrated account is a personal recollection of the development of integrated circuits and personalities a" such as Russell Ohl, Karl Lark-Horovitz, William Shockley, Carl Frosch, Lincoln Derick, Calvin Fuller, Kurt Lehovec. Jean Hoerni, Sheldon Roberts, Jay Last, Isy Haas, Bob Norman, Dave Allison, Jim Nall, Tom Longo, Bob Widlar, Dave Talbert, Frank Wanlass, and Federico Faggin. Here is the first comprehensive behind-the-scenes account of the history of the integrated circuit, the microelectronics industry, and the people closely involved in the development of the transistor and the integrated circuit.

"Your book is going to make a major contribution to semiconductor history. You and I agree that, while the world loves a hero, semiconductor progress depended on the efforts and ideas of a large number of people, and that moving forward depended on contributors going back a few decades in some cases. Also, as is the case with most inventions, a number of people with access to the same pool of common knowledge were working independently at the same time to put it all together and to make the necessary extensions to the existing technology and whorealized that the time was right for society to accept the new concepts. Your diligent research points all of this out."

Dr. Jay Last, Former Shockley Laboratories employee, co-founder of Fairchild Semiconductor, co-founder of Amelco Semiconductor, and manager of Fairchilda (TM)s group which designed and produced the world first planar integrated circuit.

"Bo Lojek presents a remarkable document of the most important and significant technical development of our times. He describes in astounding detail the engineering efforts of modern microelectronics. He concentrates on the history of silicon semiconductor devices. Californiaa (TM)s "Silicon Valley" is the center of attention, together with its ancestry of transistor invention at Bell Laboratories. He has collected a wealth of illustrative documentation, gives incisive insight into the lives of the main actors and shows the often tragic fates of the engineers and businessmen. He does not hide his firm belief in the individual engineer and warns of the retarding influence of present-day political correctness."

Dr. Hans J. Queisser, Former Shockley Semiconductor scientist and retired director of the Max-Planck-Institute for Solids, Stuttgart, Germany.

"The technical history of the semiconductor history rivals the 1849 California Gold Rush as a period filled with excitement and opportunity. Although I cannot first hand validate its complete accuracy, I enthusiastically encourage you to read the collected facts, opinions, and views of an author who was actually part of this amazing period, viewing it as a successful practicing Engineer during this "gold rush" - like hey-day of the semiconductor industry.

For educators andtechnologists you will find this collection of data, facts, and opinions, collected and observed first hand by the author, fascinating! It is a tough read for others due to the writing experience of the author and its technical focus."

John F. Gifford, Former Fairchild Semiconductor Marketing Manager of Linear Integrated Circuits, co-founder of Advanced Micro Devices, and President and Chief Executive Officer of Maxim Integrated Products.

"Bo Lojek gets it right! There are few industries as dynamic as semiconductors and the history of the semiconductor industry is still unfolding. This book gives the history of people, places and technology that resulted in todaya (TM)s semiconductor industry. I particularly like the inclusion of many technical pieces in the book."

Robert Dobkin, Former National Semiconductor Director of Advanced Circuit Development and co-founder and Chief Technical Officer of Linear Technology Corporation.

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists.

Covers major areas including materials, physics, processes, and applications of flexible electronics. Includes homework problems for readers to understand concepts in an easy manner. Discusses types of materials including flexible silicon, metal oxides and organic semiconductors in detail. Applications of flexible electronics in displays, solar cells and batteries discusses in detail Covers a section on Stretchable Electronics.

The author of this unique volume, Lev P Gor'kov is internationally renowned for his seminal contribution in the fundamentals of the Theory of Superconductivity, Theory of Metals, the field of Quantum Statistical Physics, and more generally, Organic Metals and the like. Each reprints' group is preceded by the author's introductions and commentaries clarifying the formulation of a problem, summarizing the essence of the results and placing them in the context of recent developments. The author belongs to the last generation of scientists who were the direct disciples of the legendary Russian theorist Lev Landau. And Gor'kov's achievements reflect the unique style and the originality of this famous Scientific School. As with other Russian scientists of his generation, many of the pioneering papers by Lev Gor'kov have been published in the Russian journals that are hard-to-reach for modern readers, students and postdocs. Allowing readers a glimpse into the various ways that the field of condensed matter physics was evolving for more than half a century, the volume is a valuable source for historians of science.

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included.This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

The history of this book begins way back in 1982. At that time a research proposal was filed with the Dutch Foundation for Fundamental Research on Matter concerning research to model defects in the layer structure of integrated circuits. It was projected that the results may be useful for yield estimates, fault statistics and for the design of fault tolerant structures. The reviewers were not in favor of this proposal and it disappeared in the drawers. Shortly afterwards some microelectronics industries realized that their survival may depend on a better integration between technology-and design-laboratories. For years the "silicon foundry" concept had suggested a fairly rigorous separation between the two areas. The expectation was that many small design companies would share the investment into the extremely costful Silicon fabrication plants while designing large lots of application-specific integrated circuits (ASIC's). Those fabrication plants would be concentrated with only a few market leaders.