Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems for such manufacturing systems. The book provides an operations research- and computer science-based introduction into this important field of semiconductor manufacturing-related research.

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications

A comprehensive, accessible introduction to modern all-solid-state lithium-ion batteries. All-solid-state thin-film lithium-ion batteries present a special and especially important version of lithium-ion ones. They are intended for battery-powered integrated circuit cards (smart-cards), radio-frequency identifier (RFID) tags, smart watches, implantable medical devices, remote microsensors and transmitters, Internet of Things systems, and various other wireless devices including smart building control and so on. Comprising four chapters the monograph explores and provides: The fundamentals of rechargeable batteries, comparison of lithium-ion batteries with other kinds, features of thin-film batteries. A description of functional materials for all-solid-state thin-film batteries. Various methods for applying functional layers of an all-solid-state thin-film lithium-ion battery. Diagnostics of functional layers of all-solid-state thin-film lithium-ion batteries. The monograph is intended for teachers, researchers, advanced undergraduate students, and post-graduate students of profile faculties of universities, as well as for developers and manufacturers of thin-film lithium-ion batteries.

Advanced Flip Chip Packaging presents past, present and future advances and trends in areas such as substrate technology, material development, and assembly processes. Flip chip packaging is now in widespread use in computing, communications, consumer and automotive electronics, and the demand for flip chip technology is continuing to grow in order to meet the need for products that offer better performance, are smaller, and are environmentally sustainable.

This thesis explores an amazing family of oxide compounds - the nickelates - known for their metal-to-insulator transition and, in the case of LaNiO3, to be a possible building block for designing a synthetic high Tc superconductor. Competition between various fascinating phases makes these materials very sensitive to external parameters and it is thus possible to dramatically tune their properties. This work on ultrathin LaNiO3 and the solid solution Nd1-xLaxNiO3 has important implications for the search for superconductivity in this class of materials.

This book is on applied superconductivity, which is one of the topical issues of modern science and technology. At present, the prospects for the practical application of superconductivity are obvious from both economic and practical points of view. It can reduce heat losses and reduce the weight and size of equipment, improve the reliability of electrical devices and power systems, and create new devices. As a result, the achievements of applied superconductivity make it possible to perform effective retrofitting of equipment for scientific research, in medicine, electric power, electrical engineering, transport, and to introduce new advanced technologies that provide higher efficiency, significantly reducing working costs.

Provides background for design and development of metamaterial structures using novel unit cells. Gives in-depth performance study of miniaturization of microstrip antennas. Discusses design and development of both transmission and reflection types metasurfaces and their practical applications. Verifies a variety of Metamaterial structures and Metasurfaces experimentally

High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.

This book mainly introduces the basic theory and physical characteristics of photoelectric materials, the preparation technology of photoelectric components, the working principle, the latest application, the latest progress of photoelectric materials and devices technology and the correlation with other technologies. The content mainly involves the theoretical basis of photoelectric materials, micro-nano photoelectric materials and devices, semiconductor luminescent materials and devices, inorganic photoluminescence materials, LED packaging technology, transparent conductive materials, touch screen, display screen, solar cell materials and the basic principles and development trend of their applications. In particular, the book gives a systematic theoretical analysis of new photoelectric materials and devices, such as optoelectronic materials and devices, transparent conductive materials, and provides application examples.

The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.

This book covers the chemistry of the major processes involved in the manufacture of integrated circuits. The authors describe all the major processes in use, together with some interesting processes which are currently being developed and hold future promise. Each chapter covers the current state of knowledge of the underlying chemistry of a particular process, and identifies areas of uncertainty requiring further research.

This book covers the advances in the studies of hydrogen-bonding-driven supramolecular systems made over the past decade. It is divided into four parts, with the first introducing the basics of hydrogen bonding and important hydrogen bonding patterns in solution as well as in the solid state. The second part covers molecular recognition and supramolecular structures driven by hydrogen bonding. The third part introduces the formation of hollow and giant macrocycles directed by hydrogen bonding, while the last part summarizes hydrogen bonded supramolecular polymers. This book is designed to bring together in a single volume the many important aspects of hydrogen bonding supramolecular chemistry and will be a valuable resource for graduates and researchers working in supramolecular and related sciences. Zhan-Ting Li, PhD, is a Professor of Organic Chemistry at the Department of Chemistry, Fudan University, China. Li-Zhu Wu, PhD, is a Professor of Organic Chemistry at the Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China.

This book belongs to the field of intelligent vehicle control, which is dedicated to the research of nonlinear control problems of intelligent vehicle chassis-by-wire systems. Through the nonlinear stability control of the steer-by-wire system and the consistency optimization control of the brake-by-wire system, the performance of the vehicle subsystem is improved. Then, the decoupling control of the nonlinear inverse system is used to realize the decoupling of the chassis-by-wire system. Finally, this book further adopts nonlinear rollover prevention integrated control to improve the rollover prevention performance of the vehicle.

Lanthanide-Doped Luminescent Nanomaterials reviews the latest advances in the development of lanthanide-doped luminescent inorganic nanoparticles for potential bioapplications. This book covers the chemical and physical fundamentals of these nanoparticles, such as the controlled synthesis methodology, surface modification chemistry, optical physics, and their promising applications in diverse bioassays, with an emphasis on heterogeneous and homogeneous in-vitro biodetection of tumor biomarkers. This book is intended for those readers who are interested in systematically understanding the materials design strategy, optical behavior of lanthanide ions, and practical bioapplications of lanthanide nanoparticles. It primarily focuses on the interdisciplinary frontiers in chemistry, physics and biological aspects of luminescent nanomaterials. All chapters were written by scientists active in this field and for a broad audience, providing both beginners and advanced researchers with comprehensive information on the subject. Xueyuan Chen is a Professor at Fujian Institute of Research on the Structure of Matter (FJIRSM), Chinese Academy of Sciences. Yongsheng Liu is a Research Associate Professor at FJIRSM, Chinese Academy of Sciences. Datao Tu is a Research Assistant Professor at FJIRSM, Chinese Academy of Sciences.

Functional Thin Films Technology features the functional aspects of thin films, such as their application in solar selective absorbers, fiber lasers, solid oxide fuel cells, piezo-related areas, catalysts, superhydrophobicity, semiconductors, and trace pesticides detection. It highlights developments and advances in the preparation, characterization, and applications of functional micro-/nano-scaled films and coatings. This book Presents technologies aimed at functionality used in nanoelectronics, solar selective absorbers, solid oxide fuel cells, piezo-applications, and sensors Covers absorbers, catalysts, anodic aluminum oxide, superhydrophobics, and semiconductor devices Features a chapter on transport phenomena associated to structures Discusses transport phenomena and material informatics This second volume in the two-volume set, Protective Thin Coatings and Functional Thin Films Technology, will benefit industry professionals and researchers working in areas related to semiconductors, optoelectronics, plasma technology, solid-state energy storages, and 5G, as well as advanced students studying electrical, mechanical, chemical, and materials engineering.

Hard or protective coatings are widely used in conventional and modern industries and will continue to play a key role in future manufacturing, especially in the micro and nano areas. Protective Thin Coatings Technology highlights the developments and advances in the preparation, characterization, and applications of protective micro-/nanoscaled films and coatings. This book Covers technologies for sputtering of flexible hard nanocoatings, deposition of solid lubricating films, and multilayer transition metal nitrides Describes integrated nanomechanical characterization of hard coatings, corrosion and tribo-corrosion of hard coatings, and high entropy alloy films and coatings Investigates thin films and coatings for high-temperature applications, nanocomposite coatings on magnesium alloys, and the correlation between coating properties and industrial applications Features various aspects of hard coatings, covering advanced sputtering technologies, structural characterizations, and simulations, as well as applications This first volume in the two-volume set, Protective Thin Coatings and Functional Thin Films Technology, will benefit industry professionals and researchers working in areas related to semiconductors, optoelectronics, plasma technology, solid-state energy storages, and 5G, as well as advanced students studying electrical, mechanical, chemical, and material engineering.

This book presents theoretical explorations of several fundamental problems in the dynamics and control of flexible beam systems. By integrating fresh concepts and results to form a systematic approach to control, it establishes a basic theoretical framework. It includes typical control design examples verified using MATLAB simulation, which in turn illustrate the successful practical applications of active vibration control theory for flexible beam systems. The book is primarily intended for researchers and engineers in the control system and mechanical engineering community, offering them a unique resource.

Future Directions in Silicon Photonics, Volume 101 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting the latest developments as discussed by esteemed leaders in the field silicon photonics.

This book comprises of chapters based on design of various advanced nano-catalysts and offers a development of novel solutions for a better sustainable energy future. The book includes all aspects of physical chemistry, chemical engineering and material science. The advances in nanoscience and nanotechnology help to find cost-effective and environmentally sound methods of converting naturally inspired resources into fuels, chemicals and energy. The book leads the scientific community to the most significant development in the focus research area. It provides a broad and in-depth coverage of design and development advanced nano-catalyst for various energy applications.

After the invention of semiconductor-based recti?ers and diodes in the ?rst half of the last century, the advent of the transistor paved the way for semiconductors in electronic data handling starting around the mid of the last century. The transistors widely replaced the vacuum tubes, which had even been used in the ?rst generation of computers, the Z3 developed by Konrad Zuse in the 1940s of the last century. The ?rst transistors were individually housed semiconductor devices, which had to be soldered into the electric circuits. Later on, integrated circuits were developed with increasing numbers of individual elements per square inch. The materials changed from, e. g. , PbS and Se in rf-detectors and recti?ers used frequentlyin the ?rst halfof the last centuryoverthe groupIV element semicond- tor Ge with a band gap of 0. 7eV at room temperature to Si with a value of 1. 1eV. The increase of the gap reduced the leakage current and its temperature dependence signi?cantly. Therefore, the logical step was to try GaAs with a band gap of 1. 4eV next. However, the technology of this semiconductor from the group of III-V c- poundsprovedto be muchmoredif?cult,thoughbeautifuldeviceconceptshadbeen developed. Therefore,GaAsanditsalloysandnanostructureswithotherIII-Vc- poundslike AlGaAs or InP remained restricted in electronicsto special applications like transistors for extremely high frequencies, the so-called high electron mobility transistors (HEMT). The IT industry is still mainly based on Si and will remain so in the foreseeable nearer future.

The work described in this PhD thesis is a study of a real implementation of a track-finder system which could provide reconstructed high transverse momentum tracks to the first-level trigger of the High Luminosity LHC upgrade of the CMS experiment. This is vital for the future success of CMS, since otherwise it will be impossible to achieve the trigger selectivity needed to contain the very high event rates. The unique and extremely challenging requirement of the system is to utilise the enormous volume of tracker data within a few microseconds to arrive at a trigger decision. The track-finder demonstrator described proved unequivocally, using existing hardware, that a real-time track-finder could be built using present-generation FPGA-based technology which would meet the latency and performance requirements of the future tracker. This means that more advanced hardware customised for the new CMS tracker should be even more capable, and will deliver very significant gains for the future physics returns from the LHC.

The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.