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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
This book highlights recent advances in quantum control technologies with regard to hybrid quantum systems. It addresses the following topics: phonon engineering based on phononic crystals, carbon-based nano materials like graphene and nanotubes, Terahertz light technology for single-molecule and quantum dots, nuclear-spin-based metrology for semiconductor quantum systems, quantum anomalous Hall effect in magnetic topological insulators, chiral three-dimensional photonic crystals, and bio-inspired magnonic systems. Each topic, as a component in the framework of hybrid quantum systems, is concisely presented by experts at the forefront of the field. Accordingly, the book offers a valuable asset, and will help readers find advanced technologies and materials suitable for their purposes.
III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light emitting diodes and solar cells. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in quaternary systems based on III-V semiconductors, providing he first systematic account of phase equilibria in quaternary systems based on III-V semiconductors and making research originally published in Russian accessible to the wider scientific community. Features: Contains up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
The second edition of this introductory book sets out clearly and concisely the principles of operation of the semiconductor devices that lie at the heart of the microelectronic revolution. The book aims to teach the reader how semiconductor devices are modelled. It begins by providing a firm background in the relevant semiconductor physics. These ideas are then used to construct both circuit models and mathematical models for diodes, bipolar transistors and MOSFETs. It also describes the processes involved in fabricating silicon chips containing these devices. The first edition has already proved a highly useful textbook to first and second year degree students in electrical and electronic engineering, and related disciplines. It is also useful to HND students in similar subject areas, and as supplementary reading for anyone involved in integrated circuit design and fabrication.
Understand, Select, and Design Sensors for Hydrogen-Based Applications The use of hydrogen generated from renewable energy sources is expected to become an essential component of a low-carbon, environmentally friendly energy supply, spurring the worldwide development of hydrogen technologies. Sensors for Safety and Process Control in Hydrogen Technologies provides practical, expert-driven information on modern sensors for hydrogen and other gases as well as physical parameters essential for safety and process control in hydrogen technologies. It illustrates how sensing technologies can ensure the safe and efficient implementation of the emerging global hydrogen market. The book explains the various facets of sensor technologies, including practical aspects relevant in hydrogen technologies. It presents a comprehensive and up-to-date account of the theory (physical and chemical principles), design, and implementations of sensors in hydrogen technologies. The authors also offer guidance on the development of new sensors based on the analysis of the capabilities and limitations of existing sensors with respect to current performance requirements. Suitable for both technical and non-technical personnel, the book provides a balance between detailed descriptions and simple explanations. It gives invaluable insight into the role sensors play as key enabling devices for both control and safety in established and emerging hydrogen technologies.
This book addresses a range of complex issues associated with condition monitoring (CM), fault diagnosis and detection (FDD) in smart buildings, wide area monitoring (WAM), wind energy conversion systems (WECSs), photovoltaic (PV) systems, structures, electrical systems, mechanical systems, smart grids, etc. The book's goal is to develop and combine all advanced nonintrusive CMFD approaches on a common platform. To do so, it explores the main components of various systems used for CMFD purposes. The content is divided into three main parts, the first of which provides a brief introduction, before focusing on the state of the art and major research gaps in the area of CMFD. The second part covers the step-by-step implementation of novel soft computing applications in CMFD for electrical and mechanical systems. In the third and final part, the simulation codes for each chapter are included in an extensive appendix to support newcomers to the field.
First published in 1990, this book provides an overview of the global distribution of the electronics industry and the structural factors which promoted this distribution by the end of the 1980s. Regarded as a 'flagship' sector in both advanced and developing countries, the electronics industry is encouraged by governments everywhere. Covering both the civilian and the military sides of the industry, Professor Todd reflects on the future of civilian electronics in the light of its global segmentation, and hints at the fundamental role of governments in the unfolding of both civilian and defence-electronics developments. He also endorses the overwhelming significance of strategies being played by electronics enterprises in both the USA and Japan.
Integrating molecular physics and information theory, this work presents molecular electronics as a method for information storage and retrieval that incorporates nanometer-scaled systems, uses microscopic particles and exploits the laws of quantum mechanics. It furnishes application examples employing properties of distinct molecules joined together to a macroscopic ensemble of virtually identical units.
The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.
From the Author's Preface
A much-needed update on complex high-temperature superconductors, focusing on materials aspects; this timely book coincides with a recent major break-through of the discovery of iron-based superconductors. It provides an overview of materials aspects of high-temperature superconductors, combining introductory aspects, description of new physics, material aspects, and a description of the material properties This title is suitable for researchers in materials science, physics and engineering. Also for technicians interested in the applications of superconductors, e.g. as biomagnets
Presents the first comprehensive book on electronics for vinyl High-level, practical information with minimal mathematics Includes topics such as low-noise amplification, proper cartridge loading, equalisation for archival recordings, and more Includes tricks and innovations from an expert author
The book is devoted to nanostructures and nanostructured materials containing both amorphous and crystalline phases with a particular focus on their thermal properties. It is the first time that theoreticians and experimentalists from different domains gathered to treat this subject. It contains two distinct parts; the first combines theory and simulations methods with specific examples, while the second part discusses methods to fabricate nanomaterials with crystalline and amorphous phases and experimental techniques to measure the thermal conductivity of such materials. Physical insights are given in the first part of the book, related with the existing theoretical models and the state of art simulations methods (molecular dynamics, ab-initio simulations, kinetic theory of gases). In the second part, engineering advances in the nanofabrication of crystalline/amorphous heterostructures (heavy ion irradiation, electrochemical etching, aging/recrystallization, ball milling, PVD, laser crystallization and magnetron sputtering) and adequate experimental measurement methods are analyzed (Scanning Thermal Microscopy, Raman, thermal wave methods and x-rays neutrons spectroscopy).
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Organic Light-Emitting Materials and Devices provides a single source of information covering all aspects of OLEDs, including the systematic investigation of organic light-emitting materials, device physics and engineering, and manufacturing and performance measurement techniques. This Second Edition is a compilation of the advances made in recent years and of the challenges facing the future development of OLED technology. Featuring chapters authored by internationally recognized academic and industrial experts, this authoritative text: Introduces the history, fundamental physics, and potential applications of OLEDs Reviews the synthesis, properties, and device performance of electroluminescent materials used in OLEDs Reflects the current state of molecular design, exemplifying more than 600 light-emitting polymers and highlighting the most efficient materials and devices Explores small molecules-based OLEDs, detailing hole- and electron-injection and electron-transport materials, electron- and hole-blocking materials, sensitizers, and fluorescent and phosphorescent light-emitting materials Describes solution-processable phosphorescent polymer LEDs, energy transfer processes, polarized OLEDs, anode materials, and vapor deposition manufacturing techniques employed in OLED fabrication Discusses flexible display, the backplane circuit technology for organic light-emitting displays, and the latest microstructural characterization and performance measurement techniques Contains abundant diagrams, device configurations, and molecular structures clearly illutrating the presented ideas Organic Light-Emitting Materials and Devices, Second Edition offers a comprehensive overview of the OLED field and can serve as a primary reference for those needing additional information in any particular subarea of organic electroluminescence. This book should attract the attention of materials scientists, synthetic chemists, solid-state physicists, and electronic device engineers, as well as industrial managers and patent lawyers engaged in OLED-related business areas.
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Introduction to Semiconductor Device Physics is a popular and established text that offers a thorough introduction to the underlying physics of semiconductor devices. It begins with a review of basic solid state physics, then goes on to describe the properties of semiconductors including energy bands, the concept of effective mass, carrier concentration, and conduction in more detail. Thereafter the book is concerned with the principles of operation of specific devices, beginning with the Gunn Diode and the p-n junction. The remaining chapters cover the on specific devices, including the LED, the bipolar transistor, the field-effect transistor, and the semiconductor laser. The book concludes with a chapter providing a brief introduction to quantum theory. Not overtly mathematical, Introduction to Semiconductor Device Physics introduces only those physical concepts required for an understanding of the semiconductor devices being considered. The author's intuitive style, coupled with an extensive set of worked problems, make this the ideal introductory text for those concerned with understanding electrical and electronic engineering, applied physics, and related subjects.
Thoroughly revised and updated, this highly successful textbook guides students through the analysis and design of transistor circuits. It covers a wide range of circuitry, both linear and switching. Transistor Circuit Techniques: Discrete and Integrated provides students with an overview of fundamental qualitative circuit operation, followed by an examination of analysis and design procedure. It incorporates worked problems and design examples to illustrate the concepts. This third edition includes two additional chapters on power amplifiers and power supplies, which further develop many of the circuit design techniques introduced in earlier chapters. Part of the Tutorial Guides in Electronic Engineering series, this book is intended for first and second year undergraduate courses. A complete text on its own, it offers the added advantage of being cross-referenced to other titles in the series. It is an ideal textbook for both students and instructors.
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
We live in a time of great change. In the electronics world, the last several decades have seen unprecedented growth and advancement, described by Moore's law. This observation stated that transistor density in integrated circuits doubles every 1. 5-2 years. This came with the simultaneous improvement of individual device perf- mance as well as the reduction of device power such that the total power of the resulting ICs remained under control. No trend remains constant forever, and this is unfortunately the case with Moore's law. The trouble began a number of years ago when CMOS devices were no longer able to proceed along the classical scaling trends. Key device parameters such as gate oxide thickness were simply no longer able to scale. As a result, device o- state currents began to creep up at an alarming rate. These continuing problems with classical scaling have led to a leveling off of IC clock speeds to the range of several GHz. Of course, chips can be clocked higher but the thermal issues become unmanageable. This has led to the recent trend toward microprocessors with mul- ple cores, each running at a few GHz at the most. The goal is to continue improving performance via parallelism by adding more and more cores instead of increasing speed. The challenge here is to ensure that general purpose codes can be ef?ciently parallelized. There is another potential solution to the problem of how to improve CMOS technology performance: three-dimensional integrated circuits (3D ICs).
This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.
The average car now contains much more electronic circuitry than would have been the case, even five years ago. This leaves many technicians struggling to keep up with current developments in the repair and maintenance of these electronic systems. Often, texts covering vehicle electronics dwell on unnecessary maths and general electronics principles. This practical guide discusses electronics ony within the context of the vehicle system under consideration and thus keeps theory to a minimum. Using numerous diagrams, photographs and step by step instructions, this book gives a clear description of vehicle electronic systems and fault diagnosos and than continues on to the testing and repair of these systems. Regular reviews and summaries help consolidate learning and make this book ideal for workshop and classroom use.
This book offers a bird's-eye view of the recent development trends in photovoltaics - a big business field that is rapidly growing and well on its way to maturity. The book describes current efforts to develop highly efficient, low-cost photovoltaic devices based on crystalline silicon, III-V compounds, copper indium gallium selenide (CIGS) and perovskite photovoltaic cells along with innovative, cost-competitive glass/ flexible tubular glass concentrator modules and systems, highlighting recent attempts to develop highly efficient, low-cost, flexible photovoltaic cells based on CIGS and perovskite thin films. This second edition presents, for the first time, the possible applications of perovskite modules together with Augsburger Tubular photovoltaics.
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures-including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials-this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
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