In recent years, there has been a considerable amount of effort, both in industry and academia, focusing on the design, implementation, performance analysis, evaluation and prediction of silicon photonic interconnects for inter- and intra-chip communication, paving the way for the design and dimensioning of the next and future generation of high-performance computing systems. Photonic Interconnects for Computing Systems provides a comprehensive overview of the current state-of-the-art technology and research achievements in employing silicon photonics for interconnection networks and high-performance computing, summarizing main opportunities and some challenges. The majority of the chapters were collected from presentations made at the International Workshop on Optical/Photonic Interconnects for Computing Systems (OPTICS) held over the past two years. The workshop invites internationally recognized speakers on the range of topics relevant to silicon photonics and computing systems. Technical topics discussed in the book include: Design and Implementation of Chip-Scale Photonic Interconnects; Developing Design Automation Solutions for Chip-Scale Photonic Interconnects; Design Space Exploration in Chip-Scale Photonic Interconnects; Thermal Analysis and Modeling in Photonic Interconnects; Design for Reliability; Fabrication Non-Uniformity in Photonic Interconnects; Photonic Interconnects for Computing Systems presents a compilation of outstanding contributions from leading research groups in the field. It presents a comprehensive overview of the design, advantages, challenges, and requirements of photonic interconnects for computing systems. The selected contributions present important discussions and approaches related to the design and development of novel photonic interconnect architectures, as well as various design solutions to improve the performance of such systems while considering different challenges. The book is ideal for personnel in computer/photonic industries as well as academic staff and master/graduate students in computer science and engineering, electronic engineering, electrical engineering and photonics.

The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

The Future of Semiconductor Oxides in Next-Generation Solar Cells begins with several chapters covering the synthesis of semiconductor oxides for NGSCs. Part II goes on to cover the types and applications of NGSCs currently under development, while Part III brings the two together, covering specific processing techniques for NGSC construction. Finally, Part IV discusses the stability of SO solar cells compared to organic solar cells, and the possibilities offered by hybrid technologies. This comprehensive book is an essential reference for all those academics and professionals who require thorough knowledge of recent and future developments in the role of semiconductor oxides in next generation solar cells.

This volume contains most of the invited talks of the 2001 meeting of the Solid State Physics Section of the Deutsche Physikalische Gesellschaft held from March 26 to 30 in Hamburg, Germany. The topics covered reflect the present activities in this lively domain of modern physics and are thus supposed to flashlight the state-of-the-art in condensed matter physics in Germany in the year 2001.

Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics-semiconductors, with their variable densities and effective masses. The author develops Green's functions starting from equilibrium Green's functions and going through modern time-dependent approaches to non-equilibrium Green's functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.

Multilevel Inverters: Conventional and Emerging Topologies and Their Control is written with two primary objectives: (a) explanation of fundamentals of multilevel inverters (MLIs) with reference to the general philosophy of power electronics; and (b) enabling the reader to systematically analyze a given topology with the possibility of contributing towards the ongoing evolution of topologies. The authors also present an updated status of current research in the field of MLIs with an emphasis on the evolution of newer topologies. In addition, the work includes a universal control scheme, with which any given topology can be modulated. Extensive qualitative and quantitative evaluations of emerging topologies give researchers and industry professionals suitable solutions for specific applications with a systematic presentation of software-based modeling and simulation, and an exploration of key issues. Topics covered also include power distribution among sources, voltage balancing, optimization switching frequency and asymmetric source configuration. This valuable reference further provides tools to model and simulate conventional and emerging topologies using MATLAB (R)/Simulink (R) and discusses execution of experimental set-up using popular interfacing tools. The book includes a Foreword by Dr. Frede Blaabjerg, Fellow IEEE, Professor and VILLUM Investigator, Aalborg University, Denmark.

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

This book reviews the most significant advances in concepts, methods, and applications of quantum systems in a broad variety of problems in modern chemistry, physics, and biology. In particular, it discusses atomic, molecular, and solid structure, dynamics and spectroscopy, relativistic and correlation effects in quantum chemistry, topics of computational chemistry, physics and biology, as well as applications of theoretical chemistry and physics in advanced molecular and nano-materials and biochemical systems. The book contains peer-reviewed contributions written by leading experts in the fields and based on the presentations given at the Twenty-Fourth International Workshop on Quantum Systems in Chemistry, Physics, and Biology held in Odessa, Ukraine, in August 2019. This book is aimed at advanced graduate students, academics, and researchers, both in university and corporation laboratories, interested in state-of-the-art and novel trends in quantum chemistry, physics, biology, and their applications.

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.

This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

'This is an excellent reference book for graduates or undergraduates studying semiconductor technology, or for working professionals who need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.'IEEE Electrical Insulation MagazineThis descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.

Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression.The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 - November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz.This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.

Explains the circuit design of silicon optoelectronic integrated circuits (OEICs), which are central to advances in wireless and wired telecommunications. The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS, and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of the OEICs described in the main part of the book. In order to cover the topic comprehensively, Silicon Optoelectronic Integrated Circuits presents detailed descriptions of many OEICs for a wide variety of applications from various optical sensors, smart sensors, 3D-cameras, and optical storage systems (DVD) to fiber receivers in deep-sub-m CMOS. Numerous detailed illustrations help to elucidate the material.

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing. Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost. Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce costs, with particular focus on how to reduce the gap between laboratory scale efficiency and commercial module efficiency. This book will aid materials scientists and engineers in identifying research priorities to fulfill energy needs, and will also enable researchers to understand novel semiconductor materials that are emerging in the solar market. This integrated approach also gives science and engineering students a sense of the excitement and relevance of materials science in the development of novel semiconductor materials. * Provides a comprehensive introduction to solar PV cell materials * Reviews current and future status of solar cells with respect to cost and efficiency * Covers the full range of solar cell materials, from silicon and thin films to dye sensitized and organic solar cells * Offers an in-depth account of the semiconductor material strategies and directions for further research * Features detailed tables on the world leaders in efficiency demonstrations * Edited by scientists with experience in both research and industry

Presents the first comprehensive book on electronics for vinyl High-level, practical information with minimal mathematics Includes topics such as low-noise amplification, proper cartridge loading, equalisation for archival recordings, and more Includes tricks and innovations from an expert author

The success of spintronics - the science and technology of storing, processing, sensing and communicating information using the quantum mechanical spin degree of freedom of an electron - is critically dependent on the ability to inject, detect and manipulate spins in semiconductors either by incorporating ferromagnetic materials into device architectures or by using external magnetic and electric fields. In spintronics, the controlled generation and manipulation of spin polarization in nonmagnetic semiconductors is required for the design of spin-sensitive devices ranging from spin-qubit hosts, quantum memory and gates, quantum teleporters, spin polarizers and filters, spin-field-effect-transistors, and spin-splitters, among others. One of the major challenges of spintronics is to control the creation, manipulation, and detection of spin polarized currents by purely electrical means. Another challenge is to preserve spin coherence in a device for the longest time or over the longest distance in order to produce reliable spintronic processors. These challenges remain daunting, but some progress has been made recently in overcoming some of the steepest obstacles. This book covers some of the recent advances in the field of spintronics using semiconductors.

This book presents fabrication approaches that could be adapted for the high-throughput and low-cost manufacturing of the proposed transparent electrode. It proposes and demonstrates a new type of embedded metal-mesh transparent electrode (EMTE) that offers superior electrical, optical, and mechanical properties. The structure of the EMTE allows thick metal mesh to be used (for high conductivity) without sacrificing surface smoothness. In addition, the embedded structure improves the EMTE's mechanical stability under high bending stress, as well as its chemical stability in ambient environments. These design aspects are then shown to be suitable for larger electrode areas, narrower metal-mesh line widths, and a wide range of materials, and can easily be adapted to produce flexible and even stretchable devices. In closing, the book explores the practical applications of EMTEs in flexible bifacial dye-sensitized solar cells and transparent thin-film heaters, demonstrating their outstanding performance.

This book provides an introduction to the cost modeling for electronic systems that is suitable for advanced undergraduate and graduate students in electrical, mechanical and industrial engineering, and professionals involved with electronics technology development and management. This book melds elements of traditional engineering economics with manufacturing process and life-cycle cost management concepts to form a practical foundation for predicting the cost of electronic products and systems. Various manufacturing cost analysis methods are addressed including: process-flow, parametric, cost of ownership, and activity based costing. The effects of learning curves, data uncertainty, test and rework processes, and defects are considered. Aspects of system sustainment and life-cycle cost modeling including reliability (warranty, burn-in), maintenance (sparing and availability), and obsolescence are treated. Finally, total cost of ownership of systems, return on investment, cost-benefit analysis, and real options analysis are addressed.

The role of manufacturing in a country's economy and societal development has long been established through their wealth generating capabilities. To enhance and widen our knowledge of materials and to increase innovation and responsiveness to ever-increasing international needs, more in-depth studies of functionally graded materials/tailor-made materials, recent advancements in manufacturing processes and new design philosophies are needed at present. The objective of this volume is to bring together experts from academic institutions, industries and research organizations and professional engineers for sharing of knowledge, expertise and experience in the emerging trends related to design, advanced materials processing and characterization, and advanced manufacturing processes.

This book addresses computationally-efficient multi-objective optimization of antenna structures using variable-fidelity electromagnetic simulations, surrogate modeling techniques, and design space reduction methods. Based on contemporary research, it formulates multi-objective design tasks, highlights related challenges in the context of antenna design, and discusses solution approaches. Specific focus is on providing methodologies for handling computationally expensive simulation models of antenna structures in the sense of their multi-objective optimization. Also given is a summary of recent developments in antenna design optimization using variable-fidelity simulation models. Numerous examples of real-world antenna design problems are provided along with discussions and recommendations for the readers interested in applying the considered methods in their design work.Written with researchers and students in mind, topics covered can also be applied across a broad spectrum of aeronautical, mechanical, electrical, biomedical and civil engineering. It is of particular interest to those dealing with optimization, computationally expensive design tasks and simulation-driven design.

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.