A strong spin-orbit interaction and Coulomb repulsion featuring strongly correlated d- and f-electron systems lead to various exotic phase transition including unconventional superconductivity and magnetic multipole order. However, their microscopic origins are long standing problem since they could not be explained based on conventional Migdal-Eliashberg theorem. The book focuses on many-body correlation effects beyond conventional theory for the d- and f-electron systems, and theoretically demonstrates the correlations to play significant roles in "mode-coupling" among multiple quantum fluctuations, which is called U-VC here. The following key findings are described in-depth: (i) spin triplet superconductivity caused by U-VC, (ii) being more important U-VC in f-electron systems due to magnetic multipole degrees of freedom induced by a spin-orbit interaction, and (iii) s-wave superconductivity stabilized cooperatively by antiferromagnetic fluctuations and electron-phonon interaction contrary to conventional understanding. The book provides meaningful step for revealing essential roles of many-body effects behind long standing problems in strongly correlated materials.

In their classic book published in 1974, R.D. Levine and R.B. Bernstein defined molecular reaction dynamics as being "concerned with the molecular level mechanism of elementary chemical reactions." Recent experimental and conceptual advances have moved this field beyond the study of the detailed dynamics of gas phase chemical reactions, to the dynamics of reactions occurring at the gas-solid interface. Heterogeneous reaction dynamics thus is defined as the study of the molecular level mechanism of elementary chemical reactions occurring at interfaces between two phases. This area of research has important implications for catalysis and solid-state electronics, including the manufacture of semiconductors, integrated circuits, and other solid-state devices. Heterogeneous Reaction Dynamics Steven L. Bernasek In their classic book published in 1974, R.D. Levine and R.B. Bernstein defined molecular reaction dynamics as being "concerned with the molecular level mechanism of elementary chemical reactions." Recent experimental and conceptual advances have moved this field beyond the study of the detailed dynamics of gas phase chemical reactions, to the dynamics of reactions occurring at the gas-solid interface. Heterogeneous reaction dynamics thus is defined as the study of the molecular level mechanism of elementary chemical reactions occurring at interfaces between two phases. This area of research has important implications for catalysis and solid-state electronics, including the manufacture of semiconductors, integrated circuits, and other solid-state devices. Heterogeneous Reaction Dynamics is organized around case studies from the literature. The case studies included all involve surfacesthat are well characterized as to structure and composition, and gas phase participants in the heterogeneous reaction that are well characterized at the molecular level. Introductory chapters describe the surface characterization methods and reaction dynamics approaches shared by all the case studies presented. Subsequent chapters cover inelastic scattering of molecules from surfaces and the problem of energy transfer on collision; the processes of adsorption, film growth, and adsorbate interactions; surface diffusion; the dynamics of dissociative adsorption of small molecules on initial collision with the surface; atom recombination on surfaces; catalytic oxidation; and small molecule decomposition processes. Each chapter begins with a discussion of the experimental methods particular to the case studies described. Heterogeneous Reaction Dynamics is directed to advanced undergraduates and beginning graduate students in chemistry and molecular physics who would like an introduction to the detailed dynamics of chemical reactions occurring on well characterized solid surfaces. Electronics engineers and condensed-matter physicists also will find this book to be a valuable resource.

What are the relations between the shape of a system of cities and that of fish school? Which events should happen in a cell in order that it participates to one of the finger of our hands? How to interpret the shape of a sand dune? This collective book written for the non-specialist addresses these questions and more generally, the fundamental issue of the emergence of forms and patterns in physical and living systems. It is a single book gathering the different aspects of morphogenesis and approaches developed in different disciplines on shape and pattern formation. Relying on the seminal works of D'Arcy Thompson, Alan Turing and Rene Thom, it confronts major examples like plant growth and shape, intra-cellular organization, evolution of living forms or motifs generated by crystals. A book essential to understand universal principles at work in the shapes and patterns surrounding us but also to avoid spurious analogies.

This unique compendium emphasizes key factors driving the performance of thermoelectric energy conversion systems. Important design parameters such as heat transfer at the boundaries of the system, material properties, and form factors are carefully analyzed and optimized for performance including the cost-performance trade-off. Numbers of examples are provided on the applications of thermoelectric technologies, e.g., power generation, cooling of electronic components, and waste heat recovery in wearable devices.This must-have volume also includes an interactive modeling software package developed on the nanoHUB (https://nanohub.org/) platform. Professionals, researchers, academics, undergraduate and graduate students will be able to study the impact of material properties and key design parameters on the overall thermoelectric system performance as well as the large scale implementation in the society.

This book provides an overview of the electronic applications of nanotechnology. It presents latest research in the areas of nanotechnology applied to the fields of electronics and energy. Various topics covered in this book include nanotechnology in electronic field, electronic chips and circuits, batteries, wireless devices, energy storage, semiconductors, fuel cells, defense and military equipment, and aerospace industry, This book will be useful for engineers, researchers and industry professionals primarily in the fields of electrical engineering engineering, materials science and nanotechnology.

Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.

Spectroscopic ellipsometry has been applied to a wide variety of material and device characterizations in solar cell research fields. In particular, device performance analyses using exact optical constants of component layers and direct analyses of complex solar cell structures are unique features of advanced ellipsometry methods. This second volume of Spectroscopic Ellipsometry for Photovoltaics presents various applications of the ellipsometry technique for device analyses, including optical/recombination loss analyses, real-time control and on-line monitoring of solar cell structures, and large-area structural mapping. Furthermore, this book describes the optical constants of 148 solar cell component layers, covering a broad range of materials from semiconductor light absorbers (inorganic, organic and hybrid perovskite semiconductors) to transparent conductive oxides and metals. The tabulated and completely parameterized optical constants described in this book are the most current resource that is vital for device simulations and solar cell structural analyses.

The modern electronic testing has a forty year history. Test professionals hold some fairly large conferences and numerous workshops, have a journal, and there are over one hundred books on testing. Still, a full course on testing is offered only at a few universities, mostly by professors who have a research interest in this area. Apparently, most professors would not have taken a course on electronic testing when they were students. Other than the computer engineering curriculum being too crowded, the major reason cited for the absence of a course on electronic testing is the lack of a suitable textbook. For VLSI the foundation was provided by semiconductor device techn- ogy, circuit design, and electronic testing. In a computer engineering curriculum, therefore, it is necessary that foundations should be taught before applications. The field of VLSI has expanded to systems-on-a-chip, which include digital, memory, and mixed-signalsubsystems. To our knowledge this is the first textbook to cover all three types of electronic circuits. We have written this textbook for an undergraduate "foundations" course on electronic testing. Obviously, it is too voluminous for a one-semester course and a teacher will have to select from the topics. We did not restrict such freedom because the selection may depend upon the individual expertise and interests. Besides, there is merit in having a larger book that will retain its usefulness for the owner even after the completion of the course. With equal tenacity, we address the needs of three other groups of readers.

This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.

This book is the first to give a comprehensive description of the physics and applications of resonant tunneling diodes. The opening chapters of the book set out the basic principles of coherent tunneling theory. The authors describe in detail the effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution, and intrinsic bistabilities. They review the applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, and close the book with a chapter on the new field of resonant tunneling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this active area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.

To meet the demands of students, scientists and engineers for a systematic reference source, this book introduces, comprehensively and in a single voice, research and development progress in emerging metamaterials and derived functional metadevices. Coverage includes electromagnetic, optical, acoustic, thermal, and mechanical metamaterials and related metadevices. Metamaterials are artificially engineered composites with designed properties beyond those attainable in nature and with applications in all aspects of materials science. From spatially tailored dielectrics to tunable, dynamic materials properties and unique nonlinear behavior, metamaterial systems have demonstrated tremendous flexibility and functionality in electromagnetic, optical, acoustic, thermal, and mechanical engineering. Furthermore, the field of metamaterials has been extended from the mere pursuit of various exotic properties towards the realization of practical devices, leading to the concepts of dynamically-reconfigurable metadevices and functional metasurfaces. The book explores the fundamental physics, design, and engineering aspects, as well as the full array of state-of-the-art applications to electronics, telecommunications, antennas, and energy harvesting. Future challenges and potential in regard to design, modeling and fabrication are also addressed.

Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" Materials Today "... well written, with clear, lucid explanations ..." Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

This thesis deals with the development and in-depth study of a new class of optoelectronic material platform comprising graphene and MoS_2, in which MoS_2 is used essentially to sensitize graphene and lead to unprecedently high gain and novel opto-electronic memory effects. The results presented here open up the possibility of designing a new class of photosensitive devices which can be utilized in various optoelectronic applications including biomedical sensing, astronomical sensing, optical communications, optical quantum information processing and in applications requiring low intensity photodetection and number resolved single photon detection.

This book presents the physical characteristics and possible device applications of europium monoxide as well as materials based on it. It reveals the suitability of this material for device applications in super- and semiconductor spin electronics. Ferromagnetic semiconductors like europium monoxide have contributed to a fascinating research field in condensed matter physics. In the book are presented the electronic and magnetic properties and thermal and resonance parameters of this material, its peculiarities in external fields as a function of non-stoichiometry, doping level, both in single-crystal and thin-film states. Particular attention is paid to the possibility to use this monoxide or its solid solutions (composites) unconventionally for creating spin electronics structures which work at room temperature conditions. This book appeals to researchers, graduate students and professionals engaged in the development of semiconductor spin electronics and computer devices, technologists and theoretical physicists. It is important for the calculation, development and creation of spin memory devices for a quantum computer.

Polymer Electrolytes for Energy Storage Devices, Volume I, offers a detailed explanation of recent progress and challenges in polymer electrolyte research for energy storage devices. The influence of these electrolyte properties on the performance of different energy storage devices is discussed in detail. Features: * Discusses a variety of energy storage systems and their workings and a detailed history of LIBs * Covers a wide range of polymer-based electrolytes including PVdF, PVdF-co-HFP, PAN, blend polymeric systems, composite polymeric systems, and polymer ionic liquid gel electrolytes * Provides a comprehensive review of biopolymer electrolytes for energy storage applications * Suitable for readers with experience in batteries as well as newcomers to the field This book will be invaluable to researchers and engineers working on the development of next-generation energy storage devices, including materials, chemical, electrical, and mechanical engineers, as well as those involved in related disciplines.

This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

This volume presents an in-depth review of experimental and theoretical studies on the newly discovered Fe-based superconductors. Following the Introduction, which places iron-based superconductors in the context of other unconventional superconductors, the book is divided into three sections covering sample growth, experimental characterization, and theoretical understanding. To understand the complex structure-property relationships of these materials, results from a wide range of experimental techniques and theoretical approaches are described that probe the electronic and magnetic properties and offer insight into either itinerant or localized electronic states. The extensive reference lists provide a bridge to further reading. Iron-Based Superconductivity is essential reading for advanced undergraduate and graduate students as well as researchers active in the fields of condensed matter physics and materials science in general, particularly those with an interest in correlated metals, frustrated spin systems, superconductivity, and competing orders.

Comprehensive resource on design of power electronics converters for three-phase AC applications Design of Three-phase AC Power Electronics Converters contains a systematic discussion of the three-phase AC converter design considering various converter electrical, thermal, and mechanical subsystems and functions. . Focusing on establishing converter components and subsystems models needed for the design, the text demonstrates example designs for these subsystems and for whole three-phase AC converters considering interactions among subsystems. The design methods apply to different applications and topologies. The text consists of four parts. Part I is an introduction, which presents the basics of the three-phase AC converter, its design, and the goal and organization of the book. Part II focuses on characteristics and models important to the converter design for components commonly used in three-phase AC converters. Part III is on the design of subsystems, including passive rectifiers, inverters and active rectifiers, electromagnetic interference (EMI) filters, thermal management system, control and auxiliaries, mechanical system, and application considerations. Part IV is on design optimization, which presents methodology to achieve optimal design results for three-phase AC converters. Specific sample topics covered in Design of Three-phase AC Power Electronics Converters include: Models and characteristics for devices most commonly used in three-phase converters, including conventional Si devices , and emerging SiC and GaN devices. Models and selection of various capacitors; characteristics and design of magnetics using different types of magnetic cores, with a focus on inductors Optimal three-phase AC converter design including design and selection of devices, AC line inductors, DC bus capacitors, EMI filters, heatsinks, and control. The design considers both steady state and transient conditions Load and source impact converter design, such as motors and grid condition impacts. For researchers and graduate students in power electronics, along with practicing engineers working in the area of three-phase AC converters, Design of Three-phase AC Power Electronics Converters serves as an essential resource for the subject and may be used as a textbook or industry reference.

This book brings together numerous contributions to the field of magnetoelectric (ME) composites that have been reported so far. Theoretical models of ME coupling in composites relate to the wide frequency range: from low-frequency to microwave ones and are based on simultaneous solving the elastostatic/elastodynamic and electrodynamics equations. Suggested models enable one to optimize magnetoelectric parameters of a composite. The authors hope to provide some assimilation of facts into establish knowledge for readers new to the field, so that the potential of the field can be made transparent to new generations of talent to advance the subject matter.

The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis placed on today's advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate-student level. The second part considers the physics and modeling of bipolar transistors in detail. The final part describes basic circuit configurations, aspects of process integration and applications. This modern book-length treatment will interest those working in the field, including circuit designers, industrial process developers, and PhD students. 

Metamaterials: Theory, Design, and Applications goes beyond left-handed materials (LHM) or negative index materials (NIM) and focuses on recent research activity. Included here is an introduction to optical transformation theory, revealing invisible cloaks, EM concentrators, beam splitters, and new-type antennas, a presentation of general theory on artificial metamaterials composed of periodic structures, coverage of a new rapid design method for inhomogeneous metamaterials, which makes it easier to design a cloak, and new developments including but not limited to experimental verification of invisible cloaks, FDTD simulations of invisible cloaks, the microwave and RF applications of metamaterials, sub-wavelength imaging using anisotropic metamaterials, dynamical metamaterial systems, photonic metamaterials, and magnetic plasmon effects of metamaterials.

Model-based development methods, and supporting technologies, can provide the techniques and tools needed to address the dilemma between reducing system development costs and time, and developing increasingly complex systems. This book provides the information needed to understand and apply model-drive engineering (MDE) and model-drive architecture (MDA) approaches to the development of embedded systems. Chapters, written by experts from academia and industry, cover topics relating to MDE practices and methods, as well as emerging MDE technologies. Much of the writing is based on the presentations given at the Summer School "MDE for Embedded Systems" held at Brest, France, in September 2004.