The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists.

Covers major areas including materials, physics, processes, and applications of flexible electronics. Includes homework problems for readers to understand concepts in an easy manner. Discusses types of materials including flexible silicon, metal oxides and organic semiconductors in detail. Applications of flexible electronics in displays, solar cells and batteries discusses in detail Covers a section on Stretchable Electronics.

The author of this unique volume, Lev P Gor'kov is internationally renowned for his seminal contribution in the fundamentals of the Theory of Superconductivity, Theory of Metals, the field of Quantum Statistical Physics, and more generally, Organic Metals and the like. Each reprints' group is preceded by the author's introductions and commentaries clarifying the formulation of a problem, summarizing the essence of the results and placing them in the context of recent developments. The author belongs to the last generation of scientists who were the direct disciples of the legendary Russian theorist Lev Landau. And Gor'kov's achievements reflect the unique style and the originality of this famous Scientific School. As with other Russian scientists of his generation, many of the pioneering papers by Lev Gor'kov have been published in the Russian journals that are hard-to-reach for modern readers, students and postdocs. Allowing readers a glimpse into the various ways that the field of condensed matter physics was evolving for more than half a century, the volume is a valuable source for historians of science.

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included.This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

The history of this book begins way back in 1982. At that time a research proposal was filed with the Dutch Foundation for Fundamental Research on Matter concerning research to model defects in the layer structure of integrated circuits. It was projected that the results may be useful for yield estimates, fault statistics and for the design of fault tolerant structures. The reviewers were not in favor of this proposal and it disappeared in the drawers. Shortly afterwards some microelectronics industries realized that their survival may depend on a better integration between technology-and design-laboratories. For years the "silicon foundry" concept had suggested a fairly rigorous separation between the two areas. The expectation was that many small design companies would share the investment into the extremely costful Silicon fabrication plants while designing large lots of application-specific integrated circuits (ASIC's). Those fabrication plants would be concentrated with only a few market leaders.

This book is about aerospace sensors, their principles of operation, and their typical advantages, shortcomings, and vulnerabilities. They are described in the framework of the subsystems where they function and in accordance with the flight mission they are designed to serve. The book is intended for students at the advanced undergraduate or graduate level and for research engineers who need to acquire this kind of knowledge. An effort has been made to explain, within a uniform framework of mathematical modeling, the physics upon which a certain sensor concept is based, its construction, its dynamics, and its error sources and their corresponding mathematical models. Equipped with such knowledge and understanding, the student or research engineer should be able to get involved in research and development activities of guidance, control, and navigation systems and to contribute to the initiation of novel ideas in the aerospace sensor field. As a designer and systems engineer, he should be able to correctly interpret the various items in a technical data list and thus to interact intelligently with manufacturers' representatives and other members of an R&D team. Much of the text has evolved from undergraduate and graduate courses given by the author during the past seventeen years at the Department of Aerospace Engineering at the Technion- Israel Institute of Technology and from his earlier research and development experience in flight control, guidance, navigation, and avionics at the Ministry of Defense Central Research Institute.

Discusses latest updates in the field of ultra-low power semiconductor transistors. Provides both experimental and analytical solutions for TFETs and NCFETs. Presents the synthesis and fabrication of FinFETs. Gives out details of 2D Materials and 2D transistors. Explores the application of FETs for biosensing in healthcare field.

This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mobility. Recent progress in quantum structures such as two-dimensional electron gas, superlattices, quantum Hall effect, electron confinement and the Landauer formula are included. The Quantum Hall effect is presented with different models. In the second edition, the addition energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. Also the physics of semiconductor Lasers is described in detail including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue Lasers, optical confinement, laser modes, strained quantum wells lasers which will give insight into the physics of various kinds of semiconductor lasers, in addition to the various processes of luminescence.

'A very handy feature of this book includes an appendix section consisting of fifteen parts, each dedicated to listing equations and solution examples for calculating various important quantities for optoelectronic devices. This book is an in-depth technical resource for understanding the principles of various types of optoelectronic devices and systems. Students, as well as working professionals, would find this book useful for calculating quantities needed in the design of optical system components. There is a section, at the end of the book, along with an extension reference list at the end of each chapter that provides problems from each chapter, making this book suitable for an undergraduate or graduate class in electrical engineering on optoelectronic theory.'IEEE Electrical Insulation MagazineThis book provides a comprehensive treatment of the design and applications of optoelectronic devices. Optoelectronic devices such as light emitting diodes (LEDs), semiconductor lasers, photodetectors, optical fibers, and solar cells, are important components for solid state lighting systems, optical communication systems, and power generation systems. Optical fiber amplifiers and fiber lasers are also important for high power industrial applications and sensors. The applications of optoelectronic devices were first studied in the 1970's. Since then, the diversity and scope of optoelectronic device research and applications have been steadily growing.Optoelectronic Devices is self-contained and unified in presentation. It can be used as an advanced textbook by graduate students and practicing engineers. It is also suitable for non-experts who wish to have an overview of optoelectronic devices and systems. The treatments in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.

* Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals * Contains the latest research and developments in the field * Written in an accessible yet rigorous manner

This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.

This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.

Master Today's Best Practices for Building Reusable .NET Frameworks, Libraries, and Components ".NET Core [contains] advances important to cloud application developers: performance, resource utilization, container support, and others. This third edition of Framework Design Guidelines adds guidelines related to changes that the .NET team adopted during transition from the world of client-server application to the world of the Cloud." -From the Foreword by Scott Guthrie Framework Design Guidelines has long been the definitive guide to best practices for developing components and component libraries in Microsoft .NET. Now, this third edition has been fully revised to reflect game-changing API design innovations introduced by Microsoft through eight recent updates to C#, eleven updates to .NET Framework, and the emergence and evolution of .NET Core. Three leading .NET architects share the same guidance Microsoft teams are using to evolve .NET, so you can design well-performing components that feel like natural extensions to the platform. Building on the book's proven explanatory style, the authors and expert annotators offer insider guidance on new .NET and C# concepts, including major advances in asynchronous programming and lightweight memory access. Throughout, they clarify and refresh existing content, helping you take full advantage of best practices based on C# 8, .NET Framework 4.8, and .NET Core. Discover which practices should always, generally, rarely, or never be used-including practices that are no longer recommended Learn the general philosophy and fundamental principles of modern framework design Explore common framework design patterns with up-to-date C# examples Apply best practices for naming, types, extensibility, and exceptions Learn how to design libraries that scale in the cloud Master new async programming techniques utilizing Task and ValueTask Make the most of the Memory and Span types for lightweight memory access This guide is an indispensable resource for everyone who builds reusable .NET-based frameworks, libraries, or components at any scale: large system frameworks, medium-size reusable layers of large distributed systems, extensions to system frameworks, or even small shared components. Register your book for convenient access to downloads, updates, and/or corrections as they become available. See inside book for details.

Like the previous editions also the third edition of this book combines the detailed physical modeling of mechatronic systems and their precise numerical simulation using the Finite Element (FE) method. Thereby, the basic chapter concerning the Finite Element (FE) method is enhanced, provides now also a description of higher order finite elements (both for nodal and edge finite elements) and a detailed discussion of non-conforming mesh techniques. The author enhances and improves many discussions on principles and methods. In particular, more emphasis is put on the description of single fields by adding the flow field. Corresponding to these field, the book is augmented with the new chapter about coupled flow-structural mechanical systems. Thereby, the discussion of computational aeroacoustics is extended towards perturbation approaches, which allows a decomposition of flow and acoustic quantities within the flow region. Last but not least, applications are updated and restructured so that the book meets modern demands.

"Introduction to Thin Film Transistors" reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si: H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors.

The large scale manufacturing of a-Si: H TFTs forms the basis of theactive matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si: H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics.

As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT.

The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included.

For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated.

This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes. "

Provides a glimpse of the recent developments in metamaterial research Introduces new metamaterial designs to be used in the microwave and optical regimes Discusses the usefulness of new designs in developing absorbers and/or sensors Explores the platforms for future technology of embedded systems

Black phosphorus (BP)-based two-dimensional (2D) nanomaterials are used as components in practical industrial applications in biomedicine, electronics, and photonics. There is a need to controllably shape engineered scalable structures of 2D BP building blocks, and their assembly/organization is desired for the formation of three-dimensional (3D) forms such as macro and hybrid architectures, as it is expected that these architectures will deliver even better materials performance in applications. Semiconducting Black Phosphorus: From 2D Nanomaterial to Emerging 3D Architecture provides an overview of the various synthetic strategies for 2D BP single-layer nanomaterials, their scalable synthesis, properties, and assemblies into 3D architecture. The book covers defect engineering and physical properties of black phosphorous; describes different strategies for the development of 2D nanostructures of BP with other species such as polymers, organic molecules, and other inorganic materials; offers a comparative study of 3D BP structures with other 3D architectures such as dichalcogenides (TMDs, graphene, and boron nitride); and discusses in detail applications of 3D macrostructures of BP in various fields such as energy, biomedical, and catalysis. This is an essential reference for researchers and advanced students in materials science and chemical, optoelectronic, and electrical engineering.

Semiconducting polymers are of great interest for applications in electroluminescent devices, solar cells, batteries, and diodes. This volume provides a thorough introduction to the basic concepts of the photophysics of semiconducting polymers as well as a description of the principal polymerization methods for luminescent polymers. Divided into two main sections, the book first introduces the advances made in polymer synthesis and then goes on to focus on the photophysics aspects, also exploring how new advances in the area of controlled syntheses of semiconducting polymers are applied. An understanding of the photophysics process in this kind of material requires some knowledge of many different terms in this field, so a chapter on the basic concepts is included. The process that occurs in semiconducting polymers spans time scales that are unimaginably fast, sometimes less than a picosecond. To appreciate this extraordinary scale, it is necessary to learn a range of vocabularies and concepts that stretch from the basic concepts of photophysics to modern applications, such as electroluminescent devices, solar cells, batteries, and diodes. This book provides a starting point for a broadly based understanding of photophysics concepts applied in understanding semiconducting polymers, incorporating critical ideas from across the scientific spectrum.

This book introduces the foundations and fundamentals of electronic circuits. It broadly covers the subjects of circuit analysis, as well as analog and digital electronics. It features discussion of essential theorems required for simplifying complex circuits and illustrates their applications under different conditions. Also, in view of the emerging potential of Laplace transform method for solving electrical networks, a full chapter is devoted to the topic in the book. In addition, it covers the physics and technical aspects of semiconductor diodes and transistors, as well as discrete-time digital signals, logic gates, and combinational logic circuits. Each chapter is presented as complete as possible, without the reader having to refer to any other book or supplementary material. Featuring short self-assessment questions distributed throughout, along with a large number of solved examples, supporting illustrations, and chapter-end problems and solutions, this book is ideal for any physics undergraduate lecture course on electronic circuits. Its use of clear language and many real-world examples make it an especially accessible book for students unfamiliar or unsure about the subject matter.

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

Focusing on the physical properties of diamond and sapphire, this monograph provides readers with essential details on crystal structure and growth, mechanical properties, thermal properties, optical properties, light scattering of diamond and sapphire crystals, and sapphire lasers. Various physical properties are comprehensively discussed: Mechanical properties include hardness, tensile strength, compressive strength, and Young's modulus. Thermal properties include thermal expansion, specific heat, and thermal conductivity. Optical properties of diamond and sapphire include transmission, refractive index, and absorption. Light scattering includes Raman scattering and Brillouin scattering. Sapphire lasers include chromium-doped and titanium-doped lasers. Aimed at researchers and industry professionals working in materials science, physics, electrical engineering, and related fields, this monograph is the first to concentrate solely on physical properties of these increasingly important materials.

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.

Wireless Cortical Implantable Systems examines the design for data acquisition and transmission in cortical implants. The first part of the book covers existing system level cortical implants, as well as future devices. The authors discuss the major constraints in terms of microelectronic integrations are presented. The second part of the book focuses on system-level as well as circuit and system level solutions to the development of ultra low-power and low-noise microelectronics for cortical implants. Existing solutions are presented and novel methods and solutions proposed. The third part of the book focuses on the usage of digital impulse radio ultra wide band transmission as an efficient method to transmit cortically neural recorded data at high data rate to the outside world. Original architectural and circuit and system solutions are discussed.

Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications

High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.