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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
Lanthanide-Doped Luminescent Nanomaterials reviews the latest advances in the development of lanthanide-doped luminescent inorganic nanoparticles for potential bioapplications. This book covers the chemical and physical fundamentals of these nanoparticles, such as the controlled synthesis methodology, surface modification chemistry, optical physics, and their promising applications in diverse bioassays, with an emphasis on heterogeneous and homogeneous in-vitro biodetection of tumor biomarkers. This book is intended for those readers who are interested in systematically understanding the materials design strategy, optical behavior of lanthanide ions, and practical bioapplications of lanthanide nanoparticles. It primarily focuses on the interdisciplinary frontiers in chemistry, physics and biological aspects of luminescent nanomaterials. All chapters were written by scientists active in this field and for a broad audience, providing both beginners and advanced researchers with comprehensive information on the subject. Xueyuan Chen is a Professor at Fujian Institute of Research on the Structure of Matter (FJIRSM), Chinese Academy of Sciences. Yongsheng Liu is a Research Associate Professor at FJIRSM, Chinese Academy of Sciences. Datao Tu is a Research Assistant Professor at FJIRSM, Chinese Academy of Sciences.
This thesis explores an amazing family of oxide compounds - the nickelates - known for their metal-to-insulator transition and, in the case of LaNiO3, to be a possible building block for designing a synthetic high Tc superconductor. Competition between various fascinating phases makes these materials very sensitive to external parameters and it is thus possible to dramatically tune their properties. This work on ultrathin LaNiO3 and the solid solution Nd1-xLaxNiO3 has important implications for the search for superconductivity in this class of materials.
Electronic Conduction: Classical and Quantum Theory to Nanoelectronic Devices provides a concise, complete introduction to the fundamental principles of electronic conduction in microelectronic and nanoelectronic devices, with an emphasis on integrating the quantum aspects of conduction. The chapter coverage begins by presenting the classical theory of conduction, including introductory chapters on quantum mechanics and the solid state, then moving to a complete presentation of essential theory for understanding modern electronic devices. The author's unique approach is applicable to microscale and nanoscale device simulation, which is particularly timely given the explosion in the nanoelectronics field. Features Self-contained Gives a complete account of classical and quantum aspects of conduction in nanometer scale devices Emphasises core principles, the book can be useful to electrical engineers and material scientists, and no prior course in semiconductors is necessary Highlights the bridge to modern electronics, first presenting the physics, and then the engineering complications related to quantum behaviour Includes many clear, illustrative diagrams and chapter problem sets Gives an account of post-Silicon devices such as the GaAs MOSFET, the CNT-FET and the vacuum transistor Showcases why quantum mechanics is necessary with modern devices due to their size and corresponding electron transport properties Discusses all the issues that will enable readers to conduct their own research
Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third Edition provides a complete course in quantum mechanics for students of semiconductor device physics and electrical engineering. It provides the necessary background to quantum theory for those starting work on micro- and nanoelectronic structures and is particularly useful for those beginning work with modern semiconductors devices, lasers, and qubits. This book was developed from a course the author has taught for many years with a style and order of presentation of material specifically designed for this audience. It introduces the main concepts of quantum mechanics which are important in everyday solid-state physics and electronics. Each topic includes examples which have been carefully chosen to draw upon relevant experimental research. It also includes problems with solutions to test understanding of theory. Full updated throughout, the third edition contains the latest developments, experiments, and device concepts, in addition to three fully revised chapters on operators and expectations and spin angular momentum, it contains completely new material on superconducting devices and approaches to quantum computing.
This book covers the chemistry of the major processes involved in the manufacture of integrated circuits. The authors describe all the major processes in use, together with some interesting processes which are currently being developed and hold future promise. Each chapter covers the current state of knowledge of the underlying chemistry of a particular process, and identifies areas of uncertainty requiring further research.
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book's chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material
This book mainly introduces the basic theory and physical characteristics of photoelectric materials, the preparation technology of photoelectric components, the working principle, the latest application, the latest progress of photoelectric materials and devices technology and the correlation with other technologies. The content mainly involves the theoretical basis of photoelectric materials, micro-nano photoelectric materials and devices, semiconductor luminescent materials and devices, inorganic photoluminescence materials, LED packaging technology, transparent conductive materials, touch screen, display screen, solar cell materials and the basic principles and development trend of their applications. In particular, the book gives a systematic theoretical analysis of new photoelectric materials and devices, such as optoelectronic materials and devices, transparent conductive materials, and provides application examples.
The Department of Electronics and Communication Engineering of KIET Group of Institutions, Delhi-NCR organized the 4th International Conference ICCE-2020 during November 28-29, 2020. Information compiled in this book is based on the 114 research papers of excellent quality covering different domains of Electronics and Communication Engineering, Computer Science Engineering, Information Technology, Electrical Engineering, Electronics and Instrumentation Engineering. The subject areas treated in the book are: Satellite, Radar and Microwave Techniques, Secure, Smart, and Reliable Networks, Next Generation Networks, Devices & Circuits, Signal & Image Processing, New Emerging Technologies, having the central focus on Recent Trends in Communication & Electronics (ICCE-2020). In addition, a few themes based on Special Sessions have also been conducted in ICCE-2020. The objective of the book resulting from the 4th International Conference on Recent Trends in Communication & Electronics (ICCE-2020) is to provide a resource for the study and research work for an interested audience comprising of researchers, students, audience, and practitioners in the areas of Communications & Computing Systems.
The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Polymer Electrolytes for Energy Storage Devices, Volume I, offers a detailed explanation of recent progress and challenges in polymer electrolyte research for energy storage devices. The influence of these electrolyte properties on the performance of different energy storage devices is discussed in detail. Features: * Discusses a variety of energy storage systems and their workings and a detailed history of LIBs * Covers a wide range of polymer-based electrolytes including PVdF, PVdF-co-HFP, PAN, blend polymeric systems, composite polymeric systems, and polymer ionic liquid gel electrolytes * Provides a comprehensive review of biopolymer electrolytes for energy storage applications * Suitable for readers with experience in batteries as well as newcomers to the field This book will be invaluable to researchers and engineers working on the development of next-generation energy storage devices, including materials, chemical, electrical, and mechanical engineers, as well as those involved in related disciplines.
This book covers the advances in the studies of hydrogen-bonding-driven supramolecular systems made over the past decade. It is divided into four parts, with the first introducing the basics of hydrogen bonding and important hydrogen bonding patterns in solution as well as in the solid state. The second part covers molecular recognition and supramolecular structures driven by hydrogen bonding. The third part introduces the formation of hollow and giant macrocycles directed by hydrogen bonding, while the last part summarizes hydrogen bonded supramolecular polymers. This book is designed to bring together in a single volume the many important aspects of hydrogen bonding supramolecular chemistry and will be a valuable resource for graduates and researchers working in supramolecular and related sciences. Zhan-Ting Li, PhD, is a Professor of Organic Chemistry at the Department of Chemistry, Fudan University, China. Li-Zhu Wu, PhD, is a Professor of Organic Chemistry at the Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China.
This book belongs to the field of intelligent vehicle control, which is dedicated to the research of nonlinear control problems of intelligent vehicle chassis-by-wire systems. Through the nonlinear stability control of the steer-by-wire system and the consistency optimization control of the brake-by-wire system, the performance of the vehicle subsystem is improved. Then, the decoupling control of the nonlinear inverse system is used to realize the decoupling of the chassis-by-wire system. Finally, this book further adopts nonlinear rollover prevention integrated control to improve the rollover prevention performance of the vehicle.
Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
After the invention of semiconductor-based recti?ers and diodes in the ?rst half of the last century, the advent of the transistor paved the way for semiconductors in electronic data handling starting around the mid of the last century. The transistors widely replaced the vacuum tubes, which had even been used in the ?rst generation of computers, the Z3 developed by Konrad Zuse in the 1940s of the last century. The ?rst transistors were individually housed semiconductor devices, which had to be soldered into the electric circuits. Later on, integrated circuits were developed with increasing numbers of individual elements per square inch. The materials changed from, e. g. , PbS and Se in rf-detectors and recti?ers used frequentlyin the ?rst halfof the last centuryoverthe groupIV element semicond- tor Ge with a band gap of 0. 7eV at room temperature to Si with a value of 1. 1eV. The increase of the gap reduced the leakage current and its temperature dependence signi?cantly. Therefore, the logical step was to try GaAs with a band gap of 1. 4eV next. However, the technology of this semiconductor from the group of III-V c- poundsprovedto be muchmoredif?cult,thoughbeautifuldeviceconceptshadbeen developed. Therefore,GaAsanditsalloysandnanostructureswithotherIII-Vc- poundslike AlGaAs or InP remained restricted in electronicsto special applications like transistors for extremely high frequencies, the so-called high electron mobility transistors (HEMT). The IT industry is still mainly based on Si and will remain so in the foreseeable nearer future.
This book presents theoretical explorations of several fundamental problems in the dynamics and control of flexible beam systems. By integrating fresh concepts and results to form a systematic approach to control, it establishes a basic theoretical framework. It includes typical control design examples verified using MATLAB simulation, which in turn illustrate the successful practical applications of active vibration control theory for flexible beam systems. The book is primarily intended for researchers and engineers in the control system and mechanical engineering community, offering them a unique resource.
This book introduces the reader to a number of challenges for the operation of electronic devices in various harsh environmental conditions. While some chapters focus on measuring and understanding the effects of these environments on electronic components, many also propose design solutions, whether in choice of material, innovative structures, or strategies for amelioration and repair. Many applications need electronics designed to operate in harsh environments. Readers will find, in this collection of topics, tools and ideas useful in their own pursuits and of interest to their intellectual curiosity. With a focus on radiation, operating conditions, sensor systems, package, and system design, the book is divided into three parts. The first part deals with sensing devices designed for operating in the presence of radiation, commercials of the shelf (COTS) products for space computing, and influences of single event upset. The second covers system and package design for harsh operating conditions. The third presents devices for biomedical applications under moisture and temperature loads in the frame of sensor systems and operating conditions.
Spectroscopic ellipsometry has been applied to a wide variety of material and device characterizations in solar cell research fields. In particular, device performance analyses using exact optical constants of component layers and direct analyses of complex solar cell structures are unique features of advanced ellipsometry methods. This second volume of Spectroscopic Ellipsometry for Photovoltaics presents various applications of the ellipsometry technique for device analyses, including optical/recombination loss analyses, real-time control and on-line monitoring of solar cell structures, and large-area structural mapping. Furthermore, this book describes the optical constants of 148 solar cell component layers, covering a broad range of materials from semiconductor light absorbers (inorganic, organic and hybrid perovskite semiconductors) to transparent conductive oxides and metals. The tabulated and completely parameterized optical constants described in this book are the most current resource that is vital for device simulations and solar cell structural analyses.
This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.
To meet the demands of students, scientists and engineers for a systematic reference source, this book introduces, comprehensively and in a single voice, research and development progress in emerging metamaterials and derived functional metadevices. Coverage includes electromagnetic, optical, acoustic, thermal, and mechanical metamaterials and related metadevices. Metamaterials are artificially engineered composites with designed properties beyond those attainable in nature and with applications in all aspects of materials science. From spatially tailored dielectrics to tunable, dynamic materials properties and unique nonlinear behavior, metamaterial systems have demonstrated tremendous flexibility and functionality in electromagnetic, optical, acoustic, thermal, and mechanical engineering. Furthermore, the field of metamaterials has been extended from the mere pursuit of various exotic properties towards the realization of practical devices, leading to the concepts of dynamically-reconfigurable metadevices and functional metasurfaces. The book explores the fundamental physics, design, and engineering aspects, as well as the full array of state-of-the-art applications to electronics, telecommunications, antennas, and energy harvesting. Future challenges and potential in regard to design, modeling and fabrication are also addressed.
Provides an introduction to fundamental mixer types, as well as variations on the classical mixer designs.
This textbook entitled Fundamentals of Perovskite Oxides: Synthesis, Structure, Properties and Applications summarizes the structure, synthesis routes, and potential applications of perovskite oxide materials. Since these perovskite-type ceramic materials offer opportunities in a wide range of fields of science and engineering, the chapters are broadly organized into four sections of perovskite-type oxide materials and technology. Covers recent developments in perovskite oxides Serves as a quick reference of perovskite oxides information Describes novel synthesis routes for nanostructured perovskites Discusses comprehensive details for various crystal structures, synthesis methods, properties, and applications Applies to academic education, scientific research, and industrial R&D for materials research in real-world applications like bioengineering, catalysis, energy conversion, energy storage, environmental engineering, and data storage and sensing This book serves as a handy and practical guideline suitable for students, engineers, and researchers working with advanced ceramic materials.
What are the relations between the shape of a system of cities and that of fish school? Which events should happen in a cell in order that it participates to one of the finger of our hands? How to interpret the shape of a sand dune? This collective book written for the non-specialist addresses these questions and more generally, the fundamental issue of the emergence of forms and patterns in physical and living systems. It is a single book gathering the different aspects of morphogenesis and approaches developed in different disciplines on shape and pattern formation. Relying on the seminal works of D'Arcy Thompson, Alan Turing and Rene Thom, it confronts major examples like plant growth and shape, intra-cellular organization, evolution of living forms or motifs generated by crystals. A book essential to understand universal principles at work in the shapes and patterns surrounding us but also to avoid spurious analogies.
Optoelectronic Organic-Inorganic Semiconductor Heterojunctions summarizes advances in the development of organic-inorganic semiconductor heterojunctions, points out challenges and possible solutions for material/device design, and evaluates prospects for commercial applications. Introduces the concept and basic mechanism of semiconductor heterojunctions Describes a series of organic-inorganic semiconductor heterojunctions with desirable electrical and optical properties for optoelectronic devices Discusses typical devices such as solar cells, photo-detectors, and optoelectronic memories Outlines the materials and device challenges as well as possible strategies to promote the commercial translation of semiconductor heterojunctions-based optoelectronic devices Aimed at graduate students and researchers working in solid-state materials and electronics, this book offers a comprehensive yet accessible view of the state of the art and future directions. |
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