Interfaces between dissimilar materials are met everywhere in microelectronics and microsystems. In order to ensure faultless operation of these highly sophisticated structures, it is mandatory to have fundamental understanding of materials and their interactions in the system. In this difficult task, the "traditional" method of trial and error is not feasible anymore; it takes too much time and repeated efforts. In Interfacial Compatibility in Microelectronics, an alternative approach is introduced. In this revised method four fundamental disciplines are combined: i) thermodynamics of materials ii) reaction kinetics iii) theory of microstructures and iv) stress and strain analysis. The advantages of the method are illustrated in Interfacial Compatibility in Microelectronics which includes: solutions to several common reliability issues in microsystem technology, methods to understand and predict failure mechanisms at interfaces between dissimilar materials and an approach to DFR based on deep understanding in materials science, rather than on the use of mechanistic tools, such as FMEA. Interfacial Compatibility in Microelectronics provides a clear and methodical resource for graduates and postgraduates alike.

Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

Photoelectrochemical Hydrogen Production describes the principles and materials challenges for the conversion of sunlight into hydrogen through water splitting at a semiconducting electrode. Readers will find an analysis of the solid state properties and materials requirements for semiconducting photo-electrodes, a detailed description of the semiconductor/electrolyte interface, in addition to the photo-electrochemical (PEC) cell. Experimental techniques to investigate both materials and PEC device performance are outlined, followed by an overview of the current state-of-the-art in PEC materials and devices, and combinatorial approaches towards the development of new materials. Finally, the economic and business perspectives of PEC devices are discussed, and promising future directions indicated. Photoelectrochemical Hydrogen Production is a one-stop resource for scientists, students and R&D practitioners starting in this field, providing both the theoretical background as well as useful practical information on photoelectrochemical measurement techniques. Experts in the field benefit from the chapters on current state-of-the-art materials/devices and future directions.

Molecular Electronic Junction Transport: Some Pathways and Some Ideas, by Gemma C. Solomon, Carmen Herrmann and Mark A. Ratner Unimolecular Electronic Devices, by Robert M. Metzger and Daniell L. Mattern Active and Non-Active Large-Area Metal Molecules Metal Junctions, by Barbara Branchi, Felice C. Simeone and Maria A. Rampi Charge Transport in Single Molecular Junctions at the Solid/Liquid Interface, by Chen Li, Artem Mishchenko and Thomas Wandlowski Tunneling Spectroscopy of Organic Monolayers and Single Molecules, by K. W. Hipps Single Molecule Logical Devices, by Nicolas Renaud, Mohamed Hliwa and Christian Joachim"

Foldable Flex and Thinned Silicon Multichip Packaging Technology presents newly emerging methods used to make stacked chip packages in the so-called 2-1/2 D technology (3-D in physical format, but interconnected only through the circuits on folded flex). It is also being used in single chip packages where the thinness of the chips and the flex substrate made packages significantly thinner than through any other means.

2. High Temperature UHV-STM System 264 3. Hydrogen Desorption Process on Si (111) Surface 264 4. (7x7) - (1 xl) Phase Transition on Si (111) Surface 271 Step Shifting under dc Electric Fields 275 5. 6. Conclusions 280 Acknowledgements and References 281 12. DYNAMIC OBSERVATION OF VORTICES IN SUPERCONDUCTORS USING ELECTRON WAVES 283 by Akira Tonomura 1. Introduction 283 2. Experimental Method 284 2. 1 Interference Microscopy 284 2. 2 Lorentz Microscopy 287 Observation of Superconducting Vortices 288 3. 3. 1 Superconducting Vortices Observed by Interference Microscopy 288 3. 1. 1 Profile Mode 288 3. 1. 2 Transmission Mode 291 3. 2 Superconducting Vortices Observed by Lorentz Microscopy 293 3. 3 Observation of Vortex Interaction with Pinning Centers 294 3. 3. 1 Surface Steps 295 3. 3. 2 Irradiated Point Defects 296 4. Conclusion 298 References 299 13. TEM STUDIES OF SOME STRUCTURALLY FLEXIBLE SOLIDS AND THEIR ASSOCIATED PHASE TRANSFORMATIONS 301 by Ray L. Withers and John G. Thompson 1. Introduction 301 2. Tetrahedrally Comer-Connected Framework Structures 302 3. Tetragonal a-PbO 311 4. Compositionally Flexible Anion-Deficient Fluorites and the "Defect Fluorite" to C-type Sesquioxide Transition 320 5. Summary and Conclusions 327 Acknowledgements and References 327 Author Index 331 Subject Index 333 List of Contributors A. ASEEV Institute of Semiconductor Physics, Russian Academy of Sciences Novosibirsk, 630090, pr. ac. , Lavrentjeva 13, RUSSIA E. BAUER Department of Physics and Astronomy, Arizona State University Tempe, AZ 85287-1504, U. S. A. G. H.

At present, there is an increasing interest in the prediction of properties of classical and new materials such as substitutional alloys, their surfaces, and metallic or semiconductor multilayers. A detailed understanding based on a thus of the utmost importance for fu microscopic, parameter-free approach is ture developments in solid state physics and materials science. The interrela tion between electronic and structural properties at surfaces plays a key role for a microscopic understanding of phenomena as diverse as catalysis, corrosion, chemisorption and crystal growth. Remarkable progress has been made in the past 10-15 years in the understand ing of behavior of ideal crystals and their surfaces by relating their properties to the underlying electronic structure as determined from the first principles. Similar studies of complex systems like imperfect surfaces, interfaces, and mul tilayered structures seem to be accessible by now. Conventional band-structure methods, however, are of limited use because they require an excessive number of atoms per elementary cell, and are not able to account fully for e.g. substitu tional disorder and the true semiinfinite geometry of surfaces. Such problems can be solved more appropriately by Green function techniques and multiple scattering formalism.

An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.

Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon. Other scientists have developed new methods for growing these thin films while yet others have developed new photovoltaic (PV) device structures with im proved conversion efficiencies. In the last two years, several companies have constructed multi-megawatt manufacturing plants that can produce large-area, multijunction amorphous silicon PV modules. A growing number of people be lieve that thin-film photovoltaics will be integrated into buildings on a large scale in the next few decades and will be able to make a major contribution to the world's energy needs. In this book, Ruud E. I. Schropp and Miro Zeman provide an authoritative overview of the current status of thin film solar cells based on amorphous and microcrystalline silicon. They review the significant developments that have occurred during the evolution of the technology and also discuss the most im portant recent innovations in the deposition of the materials, the understanding of the physics, and the fabrication and modeling of the devices.

This book gives an overview of nanostructures and nanomaterials applied in the fields of energy and organic electronics. It combines the knowledge from advanced deposition and processing methods of nanomaterials such as laser-based growth and nanopatterning and state-of-the-art characterization techniques with special emphasis on the optical, electrical, morphological, surface and mechanical properties. Furthermore it contains theoretical and experimental aspects for different types of nanomaterials such as nanoparticles, nanotubes and thin films for organic electronics applications. The international group of authors specifically chosen for their distinguished expertise belong to the academic and industrial world in order to provide a broader perspective. The authors take an interdisciplinary approach of physics, chemistry, engineering, materials science and nanotechnology. It appeals to researchers and graduate students.

"Molecular Modeling and Multiscaling Issues for Electronic Material Applications" provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications. Part I presents the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue. Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example of the use of quasi-continuum methods that are being used to address multiscaling issues. Part III is a more specific look at molecular dynamics in the determination of the thermal conductivity of carbon-nanotubes. Part IV covers the many aspects of molecular modeling needed to understand the relationship between the molecular structure and mechanical performance of materials. Finally, Part V discusses the transitional topic of multiscale modeling and recent developments to reach the submicronscale using mesoscale models, including examples of direct scaling and parameterization from the atomistic to the coarse-grained particle level.
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The brief primarily focuses on the performance analysis of CNT based interconnects in current research scenario. Different CNT structures are modeled on the basis of transmission line theory. Performance comparison for different CNT structures illustrates that CNTs are more promising than Cu or other materials used in global VLSI interconnects. The brief is organized into five chapters which mainly discuss: (1) an overview of current research scenario and basics of interconnects; (2) unique crystal structures and the basics of physical properties of CNTs, and the production, purification and applications of CNTs; (3) a brief technical review, the geometry and equivalent RLC parameters for different single and bundled CNT structures; (4) a comparative analysis of crosstalk and delay for different single and bundled CNT structures; and (5) various unique mixed CNT bundle structures and their equivalent electrical models.

Today's solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si: H) constitutes both emitter" and base-contact/back surface field" on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si: H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells.

In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell andtheir heterointerfaces are discussed and characterization techniques and simulation tools are presented.

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Solid State Lighting Reliability: Components to Systems begins with an explanation of the major benefits of solid state lighting (SSL) when compared to conventional lighting systems including but not limited to long useful lifetimes of 50,000 (or more) hours and high efficacy. When designing effective devices that take advantage of SSL capabilities the reliability of internal components (optics, drive electronics, controls, thermal design) take on critical importance. As such a detailed discussion of reliability from performance at the device level to sub components is included as well as the integrated systems of SSL modules, lamps and luminaires including various failure modes, reliability testing and reliability performance. A follow-up, Solid State Lighting Reliability Part 2, was published in 2017.

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance and characteristics of MOSFETs and other circuit elements. Detailed examples are presented throughout, many of which are equally applicable to other microelectronic technologies as well. The authors' overarching goal is to provide students and technology practitioners alike a practical guide to the disciplined design and use of test structures that give unambiguous information on the parametrics and performance of digital CMOS technology.

The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Electron energy loss spectroscopy has become an indispensable tool in surface analysis. Although the basic physics of this technique is well understood, instrument design has previously largely been left to intuition. This book is the first to provide a comprehensive treatment of the electron optics involved in the production of intense monochromatic beams and the detection of scattered electrons. It includes a full three-dimensional analysis of the electron optical properties of electron emission systems, monochromators and lens systems, placing particular emphasis on the procedures for matching the various components. The description is kept mathematically simple and focuses on practical aspects, with many hints for writing computer codes to calculate and optimize electrostatic lens elements.

The common belief is that light is completely reflected by metals. In reality they also exhibit an amazing property that is not so widely known: under some conditions light flows along a metallic surface as if it were glued to it. Physical phenomena related to these light waves, which are called Surface Plasmon Polaritons (SPP), have given rise to the research field of plasmonics. This thesis explores four interesting topics within plasmonics: extraordinary optical transmission, negative refractive index metamaterials, plasmonic devices for controlling SPPs, and field enhancement phenomena near metal nanoparticles.

This book demonstrates how the new phenomena in superconductivity on the nanometer scale (FFLO state, triplet superconductivity, Crossed Andreev Reflection, synchronized generation etc.) serve as the basis for the invention and development of novel nanoelectronic devices and systems. It demonstrates how rather complex ideas and theoretical models, like odd-pairing, non-uniform superconducting state, pi-shift etc., adequately describe the processes in real superconducting nanostructues and novel devices based on them. The book is useful for a broad audience of readers, researchers, engineers, PhD-students, lectures and others who would like to gain knowledge in the frontiers of superconductivity at the nanoscale.

This volume discusses the photoelectric behavior of three semiconducting thin film materials hydrogenated amorphous silicon (a Si: H), nano porous titanium dioxide, and the fullerene C60. Despite the fundamental structural differences between these materials, their electronic properties are at least on the phenomenological level surprisingly similar, since all three materials have rather low carrier mobilities. In the last decade a Si: H has conquered large market segments in photo voltaics, fiat panel displays and detector applications. It is surely the most advanced and best understood of the three materials. Nano porous Ti02 is used successfully in a novel solar cell featuring an organic dye absorber. This product is now at the brink of commercialization, while electronic applica tions for C60 still appear to be in the exploration phase. At this stage it appears that some of the insight and many of the exper imental techniques used in the development of a Si: H may prove useful in the on going and yet very basic study of TiO2 and C60 thin films. This idea is the guideline to this book. Without being comprehensive on the part of amorphous silicon, it attempts to outline basic characterization schemes for the nano porous and fullerene materials, and to evaluate their potential for applications with respect to a reference, which is given by a Si

After epoxy resins and polyimides, cyanate esters arguably form the most well-developed group of high-temperature, thermosetting polymers. They possess a number of desirable performance characteristics which make them of increasing technological importance, where their somewhat higher costs are acceptable. The principal end uses for cyanate esters are as matrix resins for printed wiring board laminates and structural composites. For the electronics markets, the low dielectric loss characteristics, dimen sional stability at molten solder temperatures and excellent adhesion to conductor metals at temperatures up to 250 DegreesC, are desirable. In their use in aerospace composites, unmodified cyanate esters offer twice the frac ture toughness of multifunctional epoxies, while achieving a service tem perature intermediate between epoxy and bis-maleimide capabilities. Applications in radome construction and aircraft with reduced radar signatures utilize the unusually low capacitance properties of cyanate esters and associated low dissipation factors. While a number of commercial cyanate ester monomers and prepoly mers are now available, to date there has been no comprehensive review of the chemistry and recent technological applications of this versatile family of resins. The aims of the present text are to present these in a com pact, readable form. The work is primarily aimed at materials scientists and polymer technologists involved in research and development in the chemical, electronics, aerospace and adhesives industries. It is hoped that advanced undergraduates and postgraduates in polymer chemistry and technology, and materials science/technology will find it a useful introduc tion and source of reference in the course of their studies.

Fabrication technologies for nanostructured devices have been developed recently, and the electrical and optical properties of such nanostructures are a subject of advanced research.
This book describes the different approaches to spectroscopic microscopy, i.e., Electron Beam Probe Spectroscopy, Spectroscopic Photoelectron Microscopy, and Scanning Probe Spectroscopy. It will be useful as a compact source of reference for the experienced reseracher, taking into account at the same time the needs of postgraduate students and nonspecialist researchers by using a tutorial approach throughout.

This book is the result of a long friendship, of a broad international co operation, and of a bold dream. It is the summary of work carried out by the authors, and several other wonderful people, during more than 15 years, across 3 continents, in the course of countless meetings, workshops and discus sions. It shows that neither language nor distance can be an obstacle to close scientific cooperation, when there is unity of goals and true collaboration. When we started, we had very different approaches to handling the mys terious, almost magical world of asynchronous circuits. Some were more theo retical, some were closer to physical reality, some were driven mostly by design needs. In the end, we all shared the same belief that true Electronic Design Automation research must be solidly grounded in formal models, practically minded to avoid excessive complexity, and tested "in the field" in the form of experimental tools. The results are this book, and the CAD tool petrify. The latter can be downloaded and tried by anybody bold (or desperate) enough to tread into the clockless (but not lawless) domain of small-scale asynchronicity. The URL is http: //www.lsi. upc. esr j ordic/petrify. We believe that asynchronous circuits are a wonderful object, that aban dons some of the almost militaristic law and order that governs synchronous circuits, to improve in terms of simplicity, energy efficiency and performance."

A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.