This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insights in related areas of II-VI materials research. The motivation for preparing this book originated from the need for a current review of this fertile and important field. A primary goal of this book is therefore to present an eclectic synthesis of these sometimes diverse fields of investigation. This book consists of three main sections, namely (1) Growth and Properties, (2) Materials Characterization and (3) Devices. Part One presents an overall perspective of the state of the art in the preparation of the widegap II-VI materials. Part Two concentrates on current topics pertinent to the characterization of these materials from the unique perspective of each of the authors. Part Three focuses on advances in the opto-electronic applications of these materials. The material in this section runs the gamut from addressing recent advances in device areas which date back to some of the earliest reported research in these materials, to tackling some quite new and exciting future directions.

This book gives an overview of nanostructures and nanomaterials applied in the fields of energy and organic electronics. It combines the knowledge from advanced deposition and processing methods of nanomaterials such as laser-based growth and nanopatterning and state-of-the-art characterization techniques with special emphasis on the optical, electrical, morphological, surface and mechanical properties. Furthermore it contains theoretical and experimental aspects for different types of nanomaterials such as nanoparticles, nanotubes and thin films for organic electronics applications. The international group of authors specifically chosen for their distinguished expertise belong to the academic and industrial world in order to provide a broader perspective. The authors take an interdisciplinary approach of physics, chemistry, engineering, materials science and nanotechnology. It appeals to researchers and graduate students.

2. High Temperature UHV-STM System 264 3. Hydrogen Desorption Process on Si (111) Surface 264 4. (7x7) - (1 xl) Phase Transition on Si (111) Surface 271 Step Shifting under dc Electric Fields 275 5. 6. Conclusions 280 Acknowledgements and References 281 12. DYNAMIC OBSERVATION OF VORTICES IN SUPERCONDUCTORS USING ELECTRON WAVES 283 by Akira Tonomura 1. Introduction 283 2. Experimental Method 284 2. 1 Interference Microscopy 284 2. 2 Lorentz Microscopy 287 Observation of Superconducting Vortices 288 3. 3. 1 Superconducting Vortices Observed by Interference Microscopy 288 3. 1. 1 Profile Mode 288 3. 1. 2 Transmission Mode 291 3. 2 Superconducting Vortices Observed by Lorentz Microscopy 293 3. 3 Observation of Vortex Interaction with Pinning Centers 294 3. 3. 1 Surface Steps 295 3. 3. 2 Irradiated Point Defects 296 4. Conclusion 298 References 299 13. TEM STUDIES OF SOME STRUCTURALLY FLEXIBLE SOLIDS AND THEIR ASSOCIATED PHASE TRANSFORMATIONS 301 by Ray L. Withers and John G. Thompson 1. Introduction 301 2. Tetrahedrally Comer-Connected Framework Structures 302 3. Tetragonal a-PbO 311 4. Compositionally Flexible Anion-Deficient Fluorites and the "Defect Fluorite" to C-type Sesquioxide Transition 320 5. Summary and Conclusions 327 Acknowledgements and References 327 Author Index 331 Subject Index 333 List of Contributors A. ASEEV Institute of Semiconductor Physics, Russian Academy of Sciences Novosibirsk, 630090, pr. ac. , Lavrentjeva 13, RUSSIA E. BAUER Department of Physics and Astronomy, Arizona State University Tempe, AZ 85287-1504, U. S. A. G. H.

At present, there is an increasing interest in the prediction of properties of classical and new materials such as substitutional alloys, their surfaces, and metallic or semiconductor multilayers. A detailed understanding based on a thus of the utmost importance for fu microscopic, parameter-free approach is ture developments in solid state physics and materials science. The interrela tion between electronic and structural properties at surfaces plays a key role for a microscopic understanding of phenomena as diverse as catalysis, corrosion, chemisorption and crystal growth. Remarkable progress has been made in the past 10-15 years in the understand ing of behavior of ideal crystals and their surfaces by relating their properties to the underlying electronic structure as determined from the first principles. Similar studies of complex systems like imperfect surfaces, interfaces, and mul tilayered structures seem to be accessible by now. Conventional band-structure methods, however, are of limited use because they require an excessive number of atoms per elementary cell, and are not able to account fully for e.g. substitu tional disorder and the true semiinfinite geometry of surfaces. Such problems can be solved more appropriately by Green function techniques and multiple scattering formalism.

Photoelectrochemical Hydrogen Production describes the principles and materials challenges for the conversion of sunlight into hydrogen through water splitting at a semiconducting electrode. Readers will find an analysis of the solid state properties and materials requirements for semiconducting photo-electrodes, a detailed description of the semiconductor/electrolyte interface, in addition to the photo-electrochemical (PEC) cell. Experimental techniques to investigate both materials and PEC device performance are outlined, followed by an overview of the current state-of-the-art in PEC materials and devices, and combinatorial approaches towards the development of new materials. Finally, the economic and business perspectives of PEC devices are discussed, and promising future directions indicated. Photoelectrochemical Hydrogen Production is a one-stop resource for scientists, students and R&D practitioners starting in this field, providing both the theoretical background as well as useful practical information on photoelectrochemical measurement techniques. Experts in the field benefit from the chapters on current state-of-the-art materials/devices and future directions.

Sensors: An Introductory Course provides an essential reference on the fundamentals of sensors. The book is designed to help readers in developing skills and the understanding required in order to implement a wide range of sensors that are commonly used in our daily lives. This book covers the basic concepts in the sensors field, including definitions and terminologies. The physical sensing effects are described, and devices which utilize these effects are presented. The most frequently used organic and inorganic sensors are introduced and the techniques for implementing them are discussed.

Andre Roehm investigates the dynamic properties of two-state lasing quantum dot lasers, with a focus on ground state quenching. With a novel semi-analytical approach, different quenching mechanisms are discussed in an unified framework and verified with numerical simulations. The known results and experimental findings are reproduced and parameter dependencies are systematically studied. Additionally, the turn-on dynamics and modulation response curves of two-state lasing devices are presented.

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

The brief primarily focuses on the performance analysis of CNT based interconnects in current research scenario. Different CNT structures are modeled on the basis of transmission line theory. Performance comparison for different CNT structures illustrates that CNTs are more promising than Cu or other materials used in global VLSI interconnects. The brief is organized into five chapters which mainly discuss: (1) an overview of current research scenario and basics of interconnects; (2) unique crystal structures and the basics of physical properties of CNTs, and the production, purification and applications of CNTs; (3) a brief technical review, the geometry and equivalent RLC parameters for different single and bundled CNT structures; (4) a comparative analysis of crosstalk and delay for different single and bundled CNT structures; and (5) various unique mixed CNT bundle structures and their equivalent electrical models.

Today's solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si: H) constitutes both emitter" and base-contact/back surface field" on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si: H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells.

In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell andtheir heterointerfaces are discussed and characterization techniques and simulation tools are presented.

"

The field of single charge tunneling comprises of phenomena where the tunneling of a microscopic charge, usually carried by an electron or a Cooper pair, leads to macro scopically observable effects. The first conference entirely devoted to this new field was the NATO Advanced Study Institute on Single Charge Tunneling held in Les Hauches, France, March 5-15, 1991. This book contains a series of tutorial articles based on lectures presented at the meeting. It was intended to provide both an introduction for nonexperts and a valuable reference summarizing the state of the art of single charge tun neling. A complementary publication with contributions by participants of the NATO Advanced Study Institute is the Special Issue on Single Charge Tunneling of Zeitschrift fur Physik B, Vol. 85, pp. 317-468 (1991 ). That issue with original papers provides a snapshot af the leading edge of current research in the field. The success of the meeting and the publicatian of this volume was made possible through the generaus support af the NATO Scientific A: ffairs Division, Brussels, Belgium. The Centre de Physique des Hauches has provided a superbly situated conference site and took care af many lacal arrangements. Both far the preparation of the conference and the handling af some manuscripts the suppart af the Centre d 'Etudes de Saclay was essential. The editing of the proceedings volume would not have been passible without the dedicated efforts of Dr. G. -1. Ingald, who tailared a 1\."

Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance and characteristics of MOSFETs and other circuit elements. Detailed examples are presented throughout, many of which are equally applicable to other microelectronic technologies as well. The authors' overarching goal is to provide students and technology practitioners alike a practical guide to the disciplined design and use of test structures that give unambiguous information on the parametrics and performance of digital CMOS technology.

Electron energy loss spectroscopy has become an indispensable tool in surface analysis. Although the basic physics of this technique is well understood, instrument design has previously largely been left to intuition. This book is the first to provide a comprehensive treatment of the electron optics involved in the production of intense monochromatic beams and the detection of scattered electrons. It includes a full three-dimensional analysis of the electron optical properties of electron emission systems, monochromators and lens systems, placing particular emphasis on the procedures for matching the various components. The description is kept mathematically simple and focuses on practical aspects, with many hints for writing computer codes to calculate and optimize electrostatic lens elements.

The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

The common belief is that light is completely reflected by metals. In reality they also exhibit an amazing property that is not so widely known: under some conditions light flows along a metallic surface as if it were glued to it. Physical phenomena related to these light waves, which are called Surface Plasmon Polaritons (SPP), have given rise to the research field of plasmonics. This thesis explores four interesting topics within plasmonics: extraordinary optical transmission, negative refractive index metamaterials, plasmonic devices for controlling SPPs, and field enhancement phenomena near metal nanoparticles.

This book demonstrates how the new phenomena in superconductivity on the nanometer scale (FFLO state, triplet superconductivity, Crossed Andreev Reflection, synchronized generation etc.) serve as the basis for the invention and development of novel nanoelectronic devices and systems. It demonstrates how rather complex ideas and theoretical models, like odd-pairing, non-uniform superconducting state, pi-shift etc., adequately describe the processes in real superconducting nanostructues and novel devices based on them. The book is useful for a broad audience of readers, researchers, engineers, PhD-students, lectures and others who would like to gain knowledge in the frontiers of superconductivity at the nanoscale.

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

This set of lecture notes provides a detailed and up-to-date description of a field undergoing explosive growth, that of confined photon systems in the shape of microcavities or photonic crystals. Bringing together world leaders in the field, it provides all the basic tools needed to master a subject which will have both major impact in fundamental studies and widescale applications. Confined photon systems enable the study of low-dimensional photonic systems, modified light-matter interaction, e.g. between excitons and photons in all-solid-state semiconductor microcavities, and of many phenomena of quantum optics, including single photon generation, squeezed light, quantum state entanglement, non-local quantum measurements, and, potentially, quantum computation. They are also on the verge of yielding new, high performance optical devices for large-scale industries such as telecommunications and display technology.

This volume discusses the photoelectric behavior of three semiconducting thin film materials hydrogenated amorphous silicon (a Si: H), nano porous titanium dioxide, and the fullerene C60. Despite the fundamental structural differences between these materials, their electronic properties are at least on the phenomenological level surprisingly similar, since all three materials have rather low carrier mobilities. In the last decade a Si: H has conquered large market segments in photo voltaics, fiat panel displays and detector applications. It is surely the most advanced and best understood of the three materials. Nano porous Ti02 is used successfully in a novel solar cell featuring an organic dye absorber. This product is now at the brink of commercialization, while electronic applica tions for C60 still appear to be in the exploration phase. At this stage it appears that some of the insight and many of the exper imental techniques used in the development of a Si: H may prove useful in the on going and yet very basic study of TiO2 and C60 thin films. This idea is the guideline to this book. Without being comprehensive on the part of amorphous silicon, it attempts to outline basic characterization schemes for the nano porous and fullerene materials, and to evaluate their potential for applications with respect to a reference, which is given by a Si

For 50 years conventional electronics has ignored the electron spin. The manipulation and utilisation of the electron spin heralds an exciting and rapidly changing era in electronics, combining the disciplines of magnetism and traditional electronics. The first generation of "spintronic" devices (such as read heads based on giant magnetoresistance or non-volatile magnetic random access memories) have already gained dominant positions in the market place. This volume, the first of its kind on spin electronics describes all the essential topics for new researchers entering the field. It covers magnetism and semiconductor basics, micromagnetism, experimental techniques, materials science, device fabrication and new developments in spin-dependent processes. At the end of most chapters are a number of exercises and worked problems to aid the reader in understanding this fascinating new field.

Fabrication technologies for nanostructured devices have been developed recently, and the electrical and optical properties of such nanostructures are a subject of advanced research.
This book describes the different approaches to spectroscopic microscopy, i.e., Electron Beam Probe Spectroscopy, Spectroscopic Photoelectron Microscopy, and Scanning Probe Spectroscopy. It will be useful as a compact source of reference for the experienced reseracher, taking into account at the same time the needs of postgraduate students and nonspecialist researchers by using a tutorial approach throughout.

After epoxy resins and polyimides, cyanate esters arguably form the most well-developed group of high-temperature, thermosetting polymers. They possess a number of desirable performance characteristics which make them of increasing technological importance, where their somewhat higher costs are acceptable. The principal end uses for cyanate esters are as matrix resins for printed wiring board laminates and structural composites. For the electronics markets, the low dielectric loss characteristics, dimen sional stability at molten solder temperatures and excellent adhesion to conductor metals at temperatures up to 250 DegreesC, are desirable. In their use in aerospace composites, unmodified cyanate esters offer twice the frac ture toughness of multifunctional epoxies, while achieving a service tem perature intermediate between epoxy and bis-maleimide capabilities. Applications in radome construction and aircraft with reduced radar signatures utilize the unusually low capacitance properties of cyanate esters and associated low dissipation factors. While a number of commercial cyanate ester monomers and prepoly mers are now available, to date there has been no comprehensive review of the chemistry and recent technological applications of this versatile family of resins. The aims of the present text are to present these in a com pact, readable form. The work is primarily aimed at materials scientists and polymer technologists involved in research and development in the chemical, electronics, aerospace and adhesives industries. It is hoped that advanced undergraduates and postgraduates in polymer chemistry and technology, and materials science/technology will find it a useful introduc tion and source of reference in the course of their studies.

Femtosecond lasers opened up new avenue in materials processing due to its unique features of ultrashort pulse width and extremely high peak intensity. One of the most important features of femtosecond laser processing is that strong absorption can be induced even by materials which are transparent to the femtosecond laser beam due to nonlinear multiphoton absorption. The multiphoton absorption allows us to perform not only surface but also three-dimensionally internal microfabrication of transparent materials such as glass. This capability makes it possible to directly fabricate three-dimensional microfluidics, micromechanics, microelectronics and microoptics embedded in the glass. Further, these microcomponents can be easily integrated in a single glass microchip by the simple procedure using the femtosecond laser. Thus, the femtosecond laser processing provides some advantages over conventional methods such as traditional semiconductor processing or soft lithography for fabrication of microfluidic, optofludic and lab-on-a-chip devices and thereby many researches on this topic are currently being carried out. This book presents a comprehensive review on the state of the art and future prospects of femtosecond laser processing for fabrication of microfluidics and optofludics including principle of femtosecond laser processing, detailed fabrication procedures of each microcomponent and practical applications to biochemical analysis.

Photophysics of Carbon Nanotubes Interfaced with Organic and Inorganic Materials describes physical, optical and spectroscopic properties of the emerging class of nanocomposites formed from carbon nanotubes (CNTs) interfacing with organic and inorganic materials. The three main chapters detail novel trends in photophysics related to the interaction of light with various carbon nanotube composites from relatively simple CNT/small molecule assemblies to complex hybrids such as CNT/Si and CNT/DNA nanostructures. The latest experimental results are followed up with detailed discussions and scientific and technological perspectives to provide a through coverage of major topics including: -Light harvesting, energy conversion, photoinduced charge separation and transport in CNT based nanohybrids -CNT/polymer composites exhibiting photoactuation; and -Optical spectroscopy and structure of CNT/DNA complexes. Including original data and a short review of recent research, Photophysics of Carbon Nanotubes Interfaced with Organic and Inorganic Materials makes this emerging field of photophysics and its applications available to academics and professionals working with carbon nanotube composites in fundamental and applied fields

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.