A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.

Bringing Scanning Probe Microscopy Up to Speed introduces the principles of scanning probe systems with particular emphasis on techniques for increasing speed. The authors include useful information on the characteristics and limitations of current state-of-the-art machines as well as the properties of the systems that will follow in the future. The basic approach is two-fold. First, fast scanning systems for single probes are treated and, second, systems with multiple probes operating in parallel are presented. The key components of the SPM are the mechanical microcantilever with integrated tip and the systems used to measure its deflection. In essence, the entire apparatus is devoted to moving the tip over a surface with a well-controlled force. The mechanical response of the actuator that governs the force is of the utmost importance since it determines the scanning speed. The mechanical response relates directly to the size of the actuator; smaller is faster. Traditional scanning probe microscopes rely on piezoelectric tubes of centimeter size to move the probe. In future scanning probe systems, the large actuators will be replaced with cantilevers where the actuators are integrated on the beam. These will be combined in arrays of multiple cantilevers with MEMS as the key technology for the fabrication process.

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

The International Symposium on Biological Effects of Magnetic and Electrom- netic Fields was held from September 3-4, 1993 at Kyushu University in Fukuoka . Japan . Originally, it was only intended to be an informal gathering of many scientists who had accepted my invitation to visit Kyushu University after the XXIVth General Assembly of the International Union of Radio Science (URSI), held in Kyoto prior to our symposium . However, since so many distinguished scientists were able to come, it was decided that a more formal symposium would be possible . It was a very productive symposium and, as a result, many of the guests consented that it would be a good idea to gather all the information put forth at the meeting and have it published. In addition, although they were unfortunately unable to attend the symposium . many other distinguished scientists had also expressed their wish to contribute to this effort and, in so doing. help to increase understanding in this, as yet, relatively immature field of science . The question of both positive and negative effects of magnetic and electromagnetic fields on biological systems has become more and more important in our world today as they .

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: * Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework * Predictive capabilities of device models, discussed with systematic comparisons to experimental results

The book presents information about Terahertz science, Terahertz photodetectors and Terahertz Lasers. A special emphasis is given to room temperature operation of long wavelength photodetectors based on novel quantum dots (Centered Defect Spherical Quantum Dots). Moreover, a complete analysis of systems based on Quantum Cascade structures to detect far infrared wavelengths is provided. Finally, the book presents Terahertz laser principles considering multi-color lasers in this range of wavelengths. Written as a background for graduate students in the Optics field.

The need for advanced thermal management materials in electronic packaging has been widely recognized as thermal challenges become barriers to the electronic industry's ability to provide continued improvements in device and system performance. With increased performance requirements for smaller, more capable, and more efficient electronic power devices, systems ranging from active electronically scanned radar arrays to web servers all require components that can dissipate heat efficiently. This requires that the materials have high capability of dissipating heat and maintaining compatibility with the die and electronic packaging. In response to critical needs, there have been revolutionary advances in thermal management materials and technologies for active and passive cooling that promise integrable and cost-effective thermal management solutions. This book meets the need for a comprehensive approach to advanced thermal management in electronic packaging, with coverage of the fundamentals of heat transfer, component design guidelines, materials selection and assessment, air, liquid, and thermoelectric cooling, characterization techniques and methodology, processing and manufacturing technology, balance between cost and performance, and application niches. The final chapter presents a roadmap and future perspective on developments in advanced thermal management materials for electronic packaging.

Explaining the properties and performance of practical nanotube devices and related applications, this is the first introductory textbook on the subject. All the fundamental concepts are introduced, so that readers without an advanced scientific background can follow all the major ideas and results. Additional topics covered include nanotube transistors and interconnects, and the basic physics of graphene. Problem sets at the end of every chapter allow readers to test their knowledge of the material covered and gain a greater understanding of the analytical skill sets developed in the text. This is an ideal textbook for senior undergraduate and graduate students taking courses in semiconductor device physics and nanoelectronics. It is also a perfect self-study guide for professional device engineers and researchers.

This book outlines many of the techniques involved in materials development and characterization for photoelectrochemical (PEC) - for example, proper metrics for describing material performance, how to assemble testing cells and prepare materials for assessment of their properties, and how to perform the experimental measurements needed to achieve reliable results towards better scientific understanding. For each technique, proper procedure, benefits, limitations, and data interpretation are discussed. Consolidating this information in a short, accessible, and easy to read reference guide will allow researchers to more rapidly immerse themselves into PEC research and also better compare their results against those of other researchers to better advance materials development. This book serves as a "how-to" guide for researchers engaged in or interested in engaging in the field of photoelectrochemical (PEC) water splitting. PEC water splitting is a rapidly growing field of research in which the goal is to develop materials which can absorb the energy from sunlight to drive electrochemical hydrogen production from the splitting of water. The substantial complexity in the scientific understanding and experimental protocols needed to sufficiently pursue accurate and reliable materials development means that a large need exists to consolidate and standardize the most common methods utilized by researchers in this field.

Semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs), are among the fastest and most advanced high-frequency devices. The topic of this book is the physical modeling of modern submicron heterostructure devices. In particular, a detailed discussion of models and parameters for compound semiconductors is presented. Based on the comprehensive modeling more than 25 simulation examples for several different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based HEMTs and HBTs are shown in comparison with experimental data from state-of-the-art devices. Device-specific optimization potentials are discussed systematically. This book is of interest for device and circuit designers in semiconductor development and industry. It is strongly recommended for advanced undergraduate and graduate students, for researchers in the field of electrical engineering and solid-state physics, for TCAD users and developers, and for researchers who are looking for practical application of their scientific work.

The intersection of nanostructured materials with photonics and electronics shows great potential for clinical diagnostics, sensors, ultrafast telecommunication devices, and a new generation of compact and fast computers. Nanophotonics draws upon cross-disciplinary expertise from physics, materials science, chemistry, electrical engineering, biology, and medicine to create novel technologies to meet a variety of challenges. This is the first book to focus on novel materials and techniques relevant to the burgeoning area of nanoscale photonics and optoelectronics, including novel-hybrid materials with multifunctional capabilities and recent advancements in the understanding of optical interactions in nanoscale materials and quantum-confined objects. Leading experts provide a fundamental understanding of photonics and the related science and technology of plasmonics, polaritons, quantum dots for nanophotonics, nanoscale field emitters, near-field optics, nanophotonic architecture, and nanobiophotonic materials.

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F33615-70-C-1348. The work was administered under the direc tion of the Air Force Materials Laboratory, Air Force Systems Command, Wright Patterson Air Force Base, Ohio, with Mr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense authorized to provide information to the entire DOD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experimental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectric, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded."

The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.

High density digital magnetic and magneto-optical storage devices are widely used in audio, video, and data processing information technology, as well as in CAD/CAM computer systems. These widespread uses generate a continually increasing demand for both increased information storage densities and capacities, and for reduced access times. Hence, the materials engineering of high density storage media, with a high signal to noise ratio, and the associated design of sophisticated read and write heads, form the basis of major technological research. This research is especially complex because, ideally, the recorded information should be both erasable and, at the same time, secure and accessible over periods of many decades. As a result, research on these complex problems requires a multidisciplinary approach which utilizes the expertise in such widely differing fields as organic, inorganic, and solid state chemistry, metallurgy, solid state physics, electrical and mechanical engineering, and systems analysis. Often, further research specialization is necessary in each of these different disciplines. For instance, solid state physics and chemistry address the problems of crystallographic structure and phase diagram determination, magnetism, and optics, but more advanced research methods, such as high resolution electron microscopy and electronic band structure calculations, are necessary to understand the microstructure of particulate recording media or the electronic spectra of magneto-optical recording media.

This volume (>Ie) NEMATICS Mathematical and Physical aspects constitutes the proceedings of a workshop which was held at l'Universite de Paris Sud (Orsay) in May 1990. This meeting was an Advanced Research Workshop sponsored by NATO. We gratefully acknowledge the help and support of the NATO Science Committee. Additional support has been provided by the Ministere des affaires etrangeres (Paris) and by the Direction des Recherches et Etudes Techniques (Paris). Also logistic support has been provided by the Association des Numericiens d'Orsay. (*) These proceedings are published in the framework of the "Contrat DRET W 90/316/ AOOO." v Contents (*) FOREWORD v INTRODUCTION 1. M. CORON, 1. M. GHIDAGLIA, F. HELEIN xi AN ENERGY-DECREASING ALGORITHM FOR HARMONIC MAPS F. ALOUGES 1 A COHOMOLOGICAL CRITERION FOR DENSITY OF SMOOTH MAPS IN SOBOLEV SPACES BETWEEN TWO MANIFOLDS F. BETHUEL, 1. M. CORON, F. DEMENGEL, F. HELEIN 15 ON THE MATHEMATICAL MODELING OF TEXTURES IN POLYMERIC LIQUID CRYSTALS M. C. CAmERER 25 A RESULT ON THE GLOBAL EXISTENCE FOR HEAT FLOWS OF HARMONIC MAPS FROM D2 INTO S2 K. C. CHANG, W. Y. DING 37 BLOW-UP ANALYSIS FOR HEAT FLOW OF HARMONIC MAPS Y. CHEN 49 T AYLOR-COUETTE INSTABILITY IN NEMATIC LIQUID CRYSTALS P. E. ClADIS 65 ON A CLASS OF SOLUTIONS IN THE THEORY OF NEMATIC PHASES B. D. COLEMAN, 1. T. JENKINS 93 RHEOLOGY OF THERMOTROPIC NEMATIC LIQUID CRYSTALLINE POLYMERS M. M. DENN, 1. A.

The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips."

Kratschmer and Huffman's revolutionary discovery of a new solid phase of carbon, solid C60, in 1990 opened the way to an entire new class of materials with physical properties so diverse that their richness has not yet been fully exploited. Moreover, as a by-product of fullerene research, carbon nanotubes were later identified, from which novel nanostructures originated that are currently fascinating materials scientists worldwide. Rivers of words have been written on both fullerenes and nanotubes, in the form of journal articles, conference proceedings and books. The present book offers, in a concise and self-contained manner, the basics of the science of these materials as well as detailed information on those aspects that have so far been better explored. Structural, electronic and dynamical properties are described as obtained from various measurements and state-of-the-art calculations. Their interrelation emerges as well as their possible dependence on, for example, preparation conditions or methods of investigation. By presenting and comparing data from different sources, experiment and theory, this book helps the reader to rapidly master the basic knowledge, to grasp important issues and critically discuss them. Ultimately, it aims to inspire him or her to find novel ways to approach still open questions. As such, this book is addressed to new researchers in the field as well as experts.

Magnetic Components for Power Electronics concerns the important considerations necessary in the choice of the optimum magnetic component for power electronic applications. These include the topology of the converter circuit, the core material, shape, size and others such as cost and potential component suppliers. These are all important for the design engineer due to the emergence of new materials, changes in supplier management and the examples of several component choices. Suppliers using this volume will also understand the needs of designers.Highlights include: * Emphasis on recently introduced new ferrite materials, such as those operating at megahertz frequencies and under higher DC drive conditions; * Discussion of amorphous and nanocrystalline metal materials; * New technologies such as resonance converters, power factors correction (PFC) and soft switching; * Catalog information from over 40 magnetic component suppliers; * Examples of methods of component choice for ferrites, amorphous nanocrystalline materials; * Information on suppliers management changes such as those occurring at Siemens, Philips, Thomson and Allied-Signal; * Attention to the increasingly important concerns about EMI. This book should be especially helpful for power electronic circuit designers, technical executives, and material science engineers involved with power electronic components.

The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.

In the rapidly developing information society there is an ever-growing demand for information-supplying elements or sensors. The technology to fabricate such sensors has grown in the past few decades from a skilful activity to a mature area of scientific research and technological development. In this process, the use of silicon-based techniques has appeared to be of crucial importance, as it introduced standardized (mass) fabrication techniques, created the possibility of integrated electronics, allowed for new transduction principles, and enabled the realization of micromechanical structures for sensing or actuation. Such micromechanical structures are particularly well-suited to realize complex microsystems that improve the performance of individual sensors. Currently, a variety of sensor areas ranging from optical to magnetic and from micromechanical to (bio)chemical sensors has reached a high level of sophistication. In this MESA Monograph the proceedings of the Dutch Sensor Conference, an initiative of the Technology Foundation (STW), held at the University of Twente on March 2-3, 1998, are compiled. It comprises all the oral and poster contributions of the conference, and gives an excellent overview of the state of the art of Dutch sensor research and development. Apart from Dutch work, the contributions of two external invited experts from Switzerland are included.

MICROELECTRONIC INTERCONNECTIONS AND MICROASSEMBL Y WORKSHOP 18-21 May 1996, Prague, Czech Republic Conference Organizers: George Harman, NIST (USA) and Pavel Mach (Czech Republic) Summary of the Technical Program Thirty two presentations were given in eight technical sessions at the Workshop. A list of these sessions and their chairpersons is attached below. The Workshop was devoted to the technical aspects of advanced interconnections and microassembly, but also included papers on the education issues required to prepare students to work in these areas. In addition to new technical developments, several papers presented overviews predicting the future directions of these technologies. The basic issue is that electronic systems will continue to be miniaturized and at the same time performance must continue to improve. Various industry roadmaps were discussed as well as new smaller packaging and interconnection concepts. The newest chip packages are often based on the selection of an appropriate interconnection method. An example is the chip-scale package, which has horizontal (x-y) dimensions,;; 20% larger than the actual silicon chip itself. The chip is often flip-chip connected to a micro ball-grid-array, but direct chip attach was described also. Several papers described advances in the manufacture of such packages.

Magnetostatic Waves and their Applications is the first book devoted to magnetostatic waves. The book gives a thorough review of the field suitable for scientists, engineers and advanced students involved in magnetism and microwave electronics new to this area. It covers the field from essential physics to applications in microwave electronics, with details of the materials and materials processing methods included.

The Tenth International Symposium on Gaseous Dielectrics was held at the Astir Palace Vouliagmeni Hotel, Athens, Greece, March 29-April 2, 2004. The symposium. continued the interdisciplinary character and comprehensive approach of the preceding nine symposia. Gaseous Dielectrics X is a detailed record of the symposium proceedings. It covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics. It is hoped that Gaseous Dielectrics X will aid future research and development in, and encourage wider industrial use of, gaseous dielectrics. The Organizing Committee of the Tenth International Symposium on Gaseous Dielectrics consisted of L. G. Christophorou (Chainnan, Greece), J. K. Olthoff (co-Chainnan, USA), A. Bulinski (Canada), A. H. Cookson (USA), C. T. Dervos (Greece), J. de Urquijo (Mexico), J. Blackman (USA), O. Farish (UK), M. E. Frechette (Canada), I. Gillimberti (Italy), A. Garscadden (USA), A. Gleizes (France), H. Hama (Japan), T. Kawamura (Japan), E. Marode (France), I. W. McAllister (Denmark), H. Morrison (Canada), A. H. Mufti (Saudi Arabia), L. Niemeyer (Switzerland), W. Pfeiffer (Germany), Y. Qiu (China), I. Sauers (USA), M. Schmidt (Germany), H.-H. Schramm (Germany), L. van der Zel (USA), S. Yanabu (Japan), Y. Wang (USA), and J. W. Wetzer (The Netherlands). The Local Arrangements Committee consisted of J. N. Avaritsiotis, P. Vassiliou, C. T. Dervos of The National Technical University of Athens, C. A. Stassinopoulos of the Aristotelian University of Thessaloniki, and D.