The Workshop on Physics and Application of Non-crystalline Semiconductors in Optoelectronics was held from 15 to 17 October 1996 in Chisinau. republic of Moldova and was devoted to the problems of non-crystalline semiconducting materials. The reports covered two mjlin topics: theoretical basis of physics of non -crystalline materials and experimental results. In the framework of these major topics there were treated many subjects. concerning the physics of non-crystalline semiconductors and their specific application: -optical properties of non-crystalline semiconductors; -doping of glassy semiconductors and photoinduced effects in chalcogenide glasses and their application for practical purposes; -methods for investigation of the structure in non-crystalline semiconductors -new glassy materials for IR trasmittance and optoelectronics. Reports and communications were presented on various aspects of the theory. new physical principles. studies of the atomic structure. search and development of optoelectronics devices. Special attention was paid to the actual subject of photoinduced transformations and its applications. Experimental investigations covered a rather wide spectrum of materials and physical phenomena. As a novel item it is worth to mention the study of nonlinear optical effects in amorphous semiconducting films. The third order optical non linearities. fast photoinduced optical absorption and refraction. acusto-optic effects recently discovered in non-crystalline semiconductors could potentially be utilised for optical signal processing. The important problems of photoinduced structural transformations and related phenomena. which are very attractive and actual both from the scientific and practical points of view. received much attention in discussions at the conference."

It is not good to have zeal without knowledge * . . . Book of Proverbs This volume constitutes the proceedings of the Third International Workshop on Materials Processing at High Gravity. It offers the latest results in a new field with immense potential for commercialization, making this book a vital resource for research and development professionals in industry, academia and government. We have titled the proceedings Centrifugal Materials Processing to emphasize that centrifugation causes more than an increase in acceleration. It also introduces the Coriolis force and a gradient of acceleration, both of which have been discovered to play important roles in materials processing. The workshop was held June 2-8, 1996 on the campus of Clarkson University in Potsdam, New York, under the sponsorship of Corning Corporation and the International Center for Gravity Materials Science and Applications. The meeting was very productive and exciting, with energetic discussions of the latest discoveries in centrifugal materials processing, continuing the atmosphere of the first workshop held in 1991 at Dubna (Russia) and the second workshop held in 1993 in Potsdam, New York. Results and research plans were presented for a wide variety of centrifugal materials processing, including directional solidification of semiconductors, crystallization of high Tc superconductors, growth of diamond thin films, welding, alloy casting, solution behavior and growth, protein crystal growth, polymerization, and flow behavior. Also described were several centrifuge facilities that have been constructed for research, with costs beginning at below $1000.

Published in honour of the 70th birthday of Yoh-Han Pao, George S. Dively Dis tinguished Professor of Engineering at Case Western Reserve University, Cleveland, Ohio, this festschrift embraces a remarkably diverse set of topics. Drawing from the fields of pattern recognition, engineering, artificial intelligence and artificial neural systems, it is a fitting testament to the extraordinary breadth of his professional in terests both in foundational research into the new technology of Intelligent Systems and ill the application of that evolving technology to the solution of hard engineering problems. In common with many scientists who build their reputations in one field before devoting their considerable energies and talents to another one, by 1972, the year in which I met him for the first time, Yoh-Han had made significant contributions to laser technology, in particular to the development of the highly accurate and stable lasers required for holographic recording purposes. In conventional holography, the information stored in a hologram produces a virtual image of the object charac terised by it. However, Yoh-Han became fascinated by the possiblity of driving the process hackwards, of using the hologram as an associative memory device enabling previously stored information to be retrieved on the basis of partial cues. It was this burgeoning interest which shaped his career for more than twenty years. Just prior to 1972, my colleagues Professor Christopher Longuet-Higgins and Dr."

Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.

The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.

Summary of the recent progress in ceramics research. Several novel concepts for materials selection and microstructural design are presented, as are experimental results that substantiate the ideas.

This volume contains the papers presented at the First Mexico-U.S.A. Symposium on Materials Sciences and Engineering held in Ixtapa, Guerrero, Mexico, during Septem ber 24-27, 1991. The conference was conceived with the primary objective of increas ing the close ties between scientists and engineers in both Mexico and the U.S. with an interest in materials. The conference itself would have not taken place without the drive, determination and technical knowledge of John K. Tien of the University of Texas at Austin and of Francisco Mejia Lira of the Universidad de San Luis Potosi. This book is dedicated to their memory. The event brought together materials scientists and engineers with interests in a broad range of subjects in the processing, characterization and properties of advanced materials. Several papers were dedicated to structural materials ranging from ferrous alloys to intemetallics, ceramics and composites. The presentation covered properties, processing, and factors that control their use, such as fatigue and corrosion. Other materials and properties were also explored by U.S. and Mexican participants. Sev eral papers dealt with the characterization and properties of magnetics, optical and superconductor materials, nanostructured materials, as well as with computational and theoretical aspects likely to impact future materials research and development."

Silicon, as an electronic substrate, has sparked a technological revolution that has allowed the realization of very large scale integration (VLSI) of circuits on a chip. These 6 fingernail-sized chips currently carry more than 10 components, consume low power, cost a few dollars, and are capable of performing data processing, numerical computations, and signal conditioning tasks at gigabit-per-second rates. Silicon, as a mechanical substrate, promises to spark another technological revolution that will allow computer chips to come with the eyes, ears, and even hands needed for closed-loop control systems. The silicon VLSI process technology which has been perfected over three decades can now be extended towards the production of novel structures such as epitaxially grown optoelectronic GaAs devices, buried layers for three dimensional integration, micromechanical mechanisms, integrated photonic circuits, and artificial neural networks. This book begins by addressing the processing of electronic and optoelectronic devices produced by using lattice mismatched epitaxial GaAs films on Si. Two viable technologies are considered. In one, silicon is used as a passive substrate in order to take advantage of its favorable properties over bulk GaAs; in the other, GaAs and Si are combined on the same chip in order to develop IC configurations with improved performance and increased levels of integration. The relationships between device operation and substrate quality are discussed in light of potential electronic and optoelectronic applications.

Broadband Integrated Services Digital Network (B-ISDN) is conceived as an all-purpose digital network supporting interactive and distributive services, bursty and continuous traffic, connection-oriented and connectionless services, all in the same network. The concepts of ISDN in general and B-ISDN in particular have been evolving since CCIIT adopted the rrrst set ofISDN recommendations in 1984. Thirteen recommendations outlining the fundamental principles and initial specifications for B-ISDN were approved in 1990, with Asynchronous Transfer Mode (ATM) being the transfer mode of choice for B-ISDN. It seems fair to say that B-ISDN concepts have changed the face of networking. The expertise we have developed for a century on telephone systems and over a number of decades on packet networks is proving to be insufficient to deploy and operate the envisioned B-ISDNs. Much more needs to be understood and satisfactorily addressed before ATM networks can become a reality. Tricomm'93 is dedicated to A TM networks. The technical program consists of invited papers addressing a large subset of issues of practical importance in the deployment of ATM networks. This is the sixth in a series of Research Triangle Conferences on Computer Communications, which emerged through the efforts of the local chapter of IEEE Communications Society.

The Handbook of Modern Ferromagnetic Materials is an up-to-the-minute compendium of all ferromagnetic materials, metallic and ceramic, intended for electrical and electronic applications. Coverage of the newest and most economically important materials (soft ferrites, the rare-earth magnet alloys, amorphous and nanocrystalline alloys) is extensive. The distinctive feature of this book is its correlation of basic material properties (metallurgical and ceramic) with their magnetic characteristics and eventually to the choice in an application. Unique to this work is information on the many magnetic components into which these materials can be formed and the pertinent design data. Another useful feature is the criteria (quality, stability and economic) for selection of a particular material. Included are the mechanical, thermal and physical properties of these materials. The author not only presents the latest information from suppliers and magnetism conferences but includes a section on new materials (e.g. colossal magnetostriction materials) being developed but not yet available.The format is arranged according to frequency of operation, which turns out to be almost concurrent with the application. Thus, direct current applications are considered first, then low frequency line power, followed by applications at increasing frequencies up to microwave uses. This anthology of ferromagnetic materials is an essential reference work for electrical and electronic designers and materials scientists. It may also serve as a text for a magnetic materials course and as a materials guide for purchasing agents and technical executives.

The quality of physical models is decisive for the understanding of the physical processes in semiconductor devices and for a reliable prediction of the behavior of a new generation of devices. The first part of the book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work, an extensive collection of widely used models is discussed in terms of physical accuracy and application results. The second part outlines the derivation of physics-based models for bulk mobility, band-to-band tunneling, defect-assisted tunneling, thermal recombination, non-ideal metal-semiconductor contact, and direct and multiphonon-assisted tunneling through insulating layers, all from a microscopic level. The models are compared with experimental data and applied to a number of simulation examples. This part also describes some new approaches of "taylored quantum mechanics for deriving device models from "first principles and the fundamental problems therein."

This volume focuses on modeling processes for which transport is one of the most complicated components, requiring different transport models in each region. The authors apply questions to a wide variety of application areas, such as semiconductors, plasmas, fluids, chemically reactive gases, etc.

The workshop on "Optical Properties of Low Dimensional Silicon sL Structures" was held in Meylan, France on March, I yd, 1993. The workshop took place inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement and CNET gave also a small financial grant, the organisational part being undertaken by the SEE and CNET. There is currently intense research activity worldwide devoted to the optical properties of low dimensional silicon structures. This follow the recent discovery of efficient visible photoluminescence (PL) from highly porous silicon. This workshop was intended to bring together all the leading European scientists and laboratories in order to reveal the state of the art and to open new research fields on this subject. A large number of invited talks took place (12) together with regular contribution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions between the participants.

In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.

IMA Volumes 135: Transport in Transition Regimes and 136: Dispersive Transport Equations and Multiscale Models focus on the modeling of processes for which transport is one of the most complicated components. This includes processes that involve a wdie range of length scales over different spatio-temporal regions of the problem, ranging from the order of mean-free paths to many times this scale. Consequently, effective modeling techniques require different transport models in each region. The first issue is that of finding efficient simulations techniques, since a fully resolved kinetic simulation is often impractical. One therefore develops homogenization, stochastic, or moment based subgrid models. Another issue is to quantify the discrepancy between macroscopic models and the underlying kinetic description, especially when dispersive effects become macroscopic, for example due to quantum effects in semiconductors and superfluids. These two volumes address these questions in relation to a wide variety of application areas, such as semiconductors, plasmas, fluids, chemically reactive gases, etc.

The unexpected and therefore really amazing discovery of J.G. Bednorz and K.A. Muller, that certain oxide compounds enter a superconductivity state at temperatures above 30 K, pushed research on superconductivity into the limelight of science in general in a way that seemed reserved only for high energy or particle physics. It may therefore be expected that this entire review would solely deal with superconductivity at high temperatures, i.e. above the boiling point of hydrogen. Any unexpected occurrence of superconductivity is, however, a challenge to scientists interested either in the physics of this phenomenon or in its materials science aspects. In this respect, the eighties have been quite revolutionary in the sense that, on various occasions, superconductivity was discovered in materials whose physical properties were not obviously favourable for adopting this ground state. Therefore, apart from emphasizing the topic of oxide superconductors, this collection of reprints also contains a selection of papers that deal with other subjects, such as coexistence of magnetic order and superconductivity, heavy electron and organic superconductors. This is all the more justified when we consider the fact that various aspects of superconductivity in high Tc oxide compounds are, or might be, connected with features that are also observed in these other materials. For nonspecialists who might be interested in this collection of reprints the Editor briefly reviews the possibilities for identifying superconductivity and discusses some special features of the superconducting state. "

"Molecular Modeling and Multiscaling Issues for Electronic Material Applications" provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications. Part I presents the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue. Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example of the use of quasi-continuum methods that are being used to address multiscaling issues. Part III is a more specific look at molecular dynamics in the determination of the thermal conductivity of carbon-nanotubes. Part IV covers the many aspects of molecular modeling needed to understand the relationship between the molecular structure and mechanical performance of materials. Finally, Part V discusses the transitional topic of multiscale modeling and recent developments to reach the submicronscale using mesoscale models, including examples of direct scaling and parameterization from the atomistic to the coarse-grained particle level.
"

This Festschrift is an outgrowth of a collection of papers presented as a conference in honor of Professor Heinz K. Henisch on his sixty-fifth birthday held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has made seminal contributions to the understanding of semiconductor switching devices and contact properties. He has an outstandin~ reputation as an expositor of science. His seminars and lectures are always deep. lucid and witty. He received his doctorate in Physics from the University of Reading and then joined the faculty. In 1963. he accepted a position in the Department of Physics at Pennsylvania State University. While at Penn State. Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institute of Physics. London. the Royal Photographic society and is a Corresponding Member of the Deutsche Gesellschaft fur Photographie. In addition to his considerable publication in the fields of physics and the history of photography. Dr. Henisch is the founder and editor of the Journal of the History of Photography published quarterly by Taylor and Francis. Ltd .. London.

-Shear-Induced Transitions and Instabilities in Surfactant Wormlike Micelles By S. Lerouge, J.-F. Berret -Laser-Interferometric Creep Rate Spectroscopy of Polymers By V. A. Bershtein, P. N. Yakushev -Polymer Nanocomposites for Electro-Optics: Perspectives on Processing Technologies, Material Characterization, and Future Application K. Matras-Postolek, D. Bogdal

The traditional use of organic colorants is to impart color to a substrate such as textiles, paper, plastics, and leather. However, in the last five years or so organic colorants have become increasingly important in the high technology (hi-tech) industries of electronics and particularly reprographics. In some of these reprographics applications the organic colorant is used in its traditional role of imparting color to a substrate, typically paper or plastic. Examples are dyes for ink-jet printing, thermally transferable dyes for thermal transfer printing, and dyes and pigments for colored toners in photocopiers and laser printers. In other applications it is a special effect of an organic colorant that is utilized, not its color. Examples are electrical effects, such as photoconduction and the electrostatic charging of toners, both of which are essential features for the operation of photocopiers and laser printers, and the selective absorption of infrared radiation, which is utilized in optical data storage. In electronic applications the organic colorant is often employed in a device. Typical examples include liquid crystal dyes, laser dyes, electro chromic dyes, dyes for solar cells, dyes for micro color filters, and dyes for nonlinear optical applications."

Techniques for the preparation of condensed matter systems have advanced considerably in the last decade, principally due to the developments in microfabrication technologies. The widespread availability of millikelvin temperature facilities also led to the discovery of a large number of new quantum phenomena. Simultaneously, the quantum theory of small condensed matter systems has matured, allowing quantitative predictions. The effects discussed in Quantum Dynamics of Submicron Structures include typical quantum interference phenomena, such as the Aharonov-Bohm-like oscillations of the magnetoresistance of thin metallic cylinders and rings, transport through chaotic billiards, and such quantization effects as the integer and fractional quantum Hall effect and the quantization of the conductance of point contacts in integer multiples of the `conductance quantum'. Transport properties and tunnelling processes in various types of normal metal and superconductor tunnelling systems are treated. The statistical properties of the quantum states of electrons in spatially inhomogeneous systems, such as a random, inhomogeneous magnetic field, are investigated. Interacting systems, like the Luttinger liquid or electrons in a quantum dot, are also considered. Reviews are given of quantum blockade mechanisms for electrons that tunnel through small junctions, like the Coulomb blockade and spin blockade, the influence of dissipative coupling of charge carriers to an environment, and Andreev scattering. Coulomb interactions and quantization effects in transport through quantum dots and in double-well potentials, as well as quantum effects in the motion of vortices, as in the Aharonov-Casher effect, are discussed. The status of the theory of the metal-insulator and superconductor-insulator phase transitions in ordered and disordered granular systems are reviewed as examples in which such quantum effects are of great importance.

Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

The past decade has seen a major resurgence in optical research and the teaching of optics in the major universities both in this country and abroad. Electrooptical devices have become achallenging subject of study that has penetrated both the electrical engineering and the physics departments of most major schools. There seems to be something about the laser that has appealed to both the practical electrical engineer with a hankering for fundamental research and to the fundamental physicist with a hankering to be practical. Somehow or other, this same form of enthusiasm has not previously existed in the study of photoelectronic devices that form images. This field of endeavor is becoming more and more sophisticated as newer forms of solid-state devices enter the field, not only in the data-processing end, but in the conversion of radiant energy into electrical charge patterns that are stored, manipulated, and read out in a way that a decade ago would have been considered beyond some fundamental limit or other.

Micro-TAS '98 is the third of a series of symposia initiated by MBSA (University of Twente) in 1994, on the subject of miniaturizing, and integrating within a monolithic structure, the chemical, biochemical and biological procedures commonly used for analysis and synthesis. The primary tool used to develop micro-total analysis systems (mu- TAS) has been micro-photolithographic patterning and micromachining. These powerful tools of Micro System Technology (MST or MEMS) have been applied in highly imaginative ways to develop microchip chemical arrays, fully integrated pump and fluid manifolds, and electrokinetically driven micro-channel systems to be used for genetic analysis, clinical diagnostics and environmental monitoring, and to integrate reactions as diverse as the polymerase chain reaction (PCR) and the large volume, partial oxidation of ammonia. This text illustrates the rapid expansion of the field, the extensive industrial involvement, the increasing number of participating researchers, the expanding range of concepts and applications that utilize MST and microfluidic devices, and new MST-compatible plastic micro-machining to meet the needs of the life science community. This volume contains the proceedings of the Third International Symposium on Micro-Total Analysis Systems, mu-TAS '98, held on October 13-16 in Banff, Alberta, Canada. State-of-the-art invited and contributed papers presented by the world's leading mu- TAS research groups provide a highly informative picture of the growth since 1994 and of the promising future of this exciting and rapidly growing field.

There have been many books published on scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related subjects since Dr. Cerd Binnig and Dr. Heinrich Rohrer invented STM in 1982 and AFM in 1986 at IBM Research Center in Zurich, Switzerland. These two techniques, STM and AFM, now form the core of what has come to be called the 'scanning probe microscopy (SPM)' family. SPM is not just the most powerful microscope for scientists to image atoms on surfaces, but is also becoming an indispensable tool for manipulating atoms and molecules to construct man-made materials and devices. Its impact has been felt in various fields, from surface physics and chemistry to nano-mechanics, nano-electronics and medical science. Its influence will surely extend further as the years go by, beyond the reach of our present imagination, and new research applications will continue to emerge. This book, therefore, is not intended to be a comprehensive review or textbook on SPM. Its aim is to cover only a selected part of the active re search fields of SPM and related topics in which I have been directly involved over the years. These include the basic principles of STM and AFM, and their applications to fullerene film growth, SiC surface reconstructions, MBE (molecular beam epitaxy) growth of CaAs, atomic scale manipulation of Si surfaces and meso scopic work function."