IMA Volumes 135: Transport in Transition Regimes and 136: Dispersive Transport Equations and Multiscale Models focus on the modeling of processes for which transport is one of the most complicated components. This includes processes that involve a wdie range of length scales over different spatio-temporal regions of the problem, ranging from the order of mean-free paths to many times this scale. Consequently, effective modeling techniques require different transport models in each region. The first issue is that of finding efficient simulations techniques, since a fully resolved kinetic simulation is often impractical. One therefore develops homogenization, stochastic, or moment based subgrid models. Another issue is to quantify the discrepancy between macroscopic models and the underlying kinetic description, especially when dispersive effects become macroscopic, for example due to quantum effects in semiconductors and superfluids. These two volumes address these questions in relation to a wide variety of application areas, such as semiconductors, plasmas, fluids, chemically reactive gases, etc.

The unexpected and therefore really amazing discovery of J.G. Bednorz and K.A. Muller, that certain oxide compounds enter a superconductivity state at temperatures above 30 K, pushed research on superconductivity into the limelight of science in general in a way that seemed reserved only for high energy or particle physics. It may therefore be expected that this entire review would solely deal with superconductivity at high temperatures, i.e. above the boiling point of hydrogen. Any unexpected occurrence of superconductivity is, however, a challenge to scientists interested either in the physics of this phenomenon or in its materials science aspects. In this respect, the eighties have been quite revolutionary in the sense that, on various occasions, superconductivity was discovered in materials whose physical properties were not obviously favourable for adopting this ground state. Therefore, apart from emphasizing the topic of oxide superconductors, this collection of reprints also contains a selection of papers that deal with other subjects, such as coexistence of magnetic order and superconductivity, heavy electron and organic superconductors. This is all the more justified when we consider the fact that various aspects of superconductivity in high Tc oxide compounds are, or might be, connected with features that are also observed in these other materials. For nonspecialists who might be interested in this collection of reprints the Editor briefly reviews the possibilities for identifying superconductivity and discusses some special features of the superconducting state. "

"Molecular Modeling and Multiscaling Issues for Electronic Material Applications" provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications. Part I presents the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue. Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example of the use of quasi-continuum methods that are being used to address multiscaling issues. Part III is a more specific look at molecular dynamics in the determination of the thermal conductivity of carbon-nanotubes. Part IV covers the many aspects of molecular modeling needed to understand the relationship between the molecular structure and mechanical performance of materials. Finally, Part V discusses the transitional topic of multiscale modeling and recent developments to reach the submicronscale using mesoscale models, including examples of direct scaling and parameterization from the atomistic to the coarse-grained particle level.
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This Festschrift is an outgrowth of a collection of papers presented as a conference in honor of Professor Heinz K. Henisch on his sixty-fifth birthday held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has made seminal contributions to the understanding of semiconductor switching devices and contact properties. He has an outstandin~ reputation as an expositor of science. His seminars and lectures are always deep. lucid and witty. He received his doctorate in Physics from the University of Reading and then joined the faculty. In 1963. he accepted a position in the Department of Physics at Pennsylvania State University. While at Penn State. Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institute of Physics. London. the Royal Photographic society and is a Corresponding Member of the Deutsche Gesellschaft fur Photographie. In addition to his considerable publication in the fields of physics and the history of photography. Dr. Henisch is the founder and editor of the Journal of the History of Photography published quarterly by Taylor and Francis. Ltd .. London.

-Shear-Induced Transitions and Instabilities in Surfactant Wormlike Micelles By S. Lerouge, J.-F. Berret -Laser-Interferometric Creep Rate Spectroscopy of Polymers By V. A. Bershtein, P. N. Yakushev -Polymer Nanocomposites for Electro-Optics: Perspectives on Processing Technologies, Material Characterization, and Future Application K. Matras-Postolek, D. Bogdal

The traditional use of organic colorants is to impart color to a substrate such as textiles, paper, plastics, and leather. However, in the last five years or so organic colorants have become increasingly important in the high technology (hi-tech) industries of electronics and particularly reprographics. In some of these reprographics applications the organic colorant is used in its traditional role of imparting color to a substrate, typically paper or plastic. Examples are dyes for ink-jet printing, thermally transferable dyes for thermal transfer printing, and dyes and pigments for colored toners in photocopiers and laser printers. In other applications it is a special effect of an organic colorant that is utilized, not its color. Examples are electrical effects, such as photoconduction and the electrostatic charging of toners, both of which are essential features for the operation of photocopiers and laser printers, and the selective absorption of infrared radiation, which is utilized in optical data storage. In electronic applications the organic colorant is often employed in a device. Typical examples include liquid crystal dyes, laser dyes, electro chromic dyes, dyes for solar cells, dyes for micro color filters, and dyes for nonlinear optical applications."

Techniques for the preparation of condensed matter systems have advanced considerably in the last decade, principally due to the developments in microfabrication technologies. The widespread availability of millikelvin temperature facilities also led to the discovery of a large number of new quantum phenomena. Simultaneously, the quantum theory of small condensed matter systems has matured, allowing quantitative predictions. The effects discussed in Quantum Dynamics of Submicron Structures include typical quantum interference phenomena, such as the Aharonov-Bohm-like oscillations of the magnetoresistance of thin metallic cylinders and rings, transport through chaotic billiards, and such quantization effects as the integer and fractional quantum Hall effect and the quantization of the conductance of point contacts in integer multiples of the `conductance quantum'. Transport properties and tunnelling processes in various types of normal metal and superconductor tunnelling systems are treated. The statistical properties of the quantum states of electrons in spatially inhomogeneous systems, such as a random, inhomogeneous magnetic field, are investigated. Interacting systems, like the Luttinger liquid or electrons in a quantum dot, are also considered. Reviews are given of quantum blockade mechanisms for electrons that tunnel through small junctions, like the Coulomb blockade and spin blockade, the influence of dissipative coupling of charge carriers to an environment, and Andreev scattering. Coulomb interactions and quantization effects in transport through quantum dots and in double-well potentials, as well as quantum effects in the motion of vortices, as in the Aharonov-Casher effect, are discussed. The status of the theory of the metal-insulator and superconductor-insulator phase transitions in ordered and disordered granular systems are reviewed as examples in which such quantum effects are of great importance.

Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

The past decade has seen a major resurgence in optical research and the teaching of optics in the major universities both in this country and abroad. Electrooptical devices have become achallenging subject of study that has penetrated both the electrical engineering and the physics departments of most major schools. There seems to be something about the laser that has appealed to both the practical electrical engineer with a hankering for fundamental research and to the fundamental physicist with a hankering to be practical. Somehow or other, this same form of enthusiasm has not previously existed in the study of photoelectronic devices that form images. This field of endeavor is becoming more and more sophisticated as newer forms of solid-state devices enter the field, not only in the data-processing end, but in the conversion of radiant energy into electrical charge patterns that are stored, manipulated, and read out in a way that a decade ago would have been considered beyond some fundamental limit or other.

Micro-TAS '98 is the third of a series of symposia initiated by MBSA (University of Twente) in 1994, on the subject of miniaturizing, and integrating within a monolithic structure, the chemical, biochemical and biological procedures commonly used for analysis and synthesis. The primary tool used to develop micro-total analysis systems (mu- TAS) has been micro-photolithographic patterning and micromachining. These powerful tools of Micro System Technology (MST or MEMS) have been applied in highly imaginative ways to develop microchip chemical arrays, fully integrated pump and fluid manifolds, and electrokinetically driven micro-channel systems to be used for genetic analysis, clinical diagnostics and environmental monitoring, and to integrate reactions as diverse as the polymerase chain reaction (PCR) and the large volume, partial oxidation of ammonia. This text illustrates the rapid expansion of the field, the extensive industrial involvement, the increasing number of participating researchers, the expanding range of concepts and applications that utilize MST and microfluidic devices, and new MST-compatible plastic micro-machining to meet the needs of the life science community. This volume contains the proceedings of the Third International Symposium on Micro-Total Analysis Systems, mu-TAS '98, held on October 13-16 in Banff, Alberta, Canada. State-of-the-art invited and contributed papers presented by the world's leading mu- TAS research groups provide a highly informative picture of the growth since 1994 and of the promising future of this exciting and rapidly growing field.

There have been many books published on scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related subjects since Dr. Cerd Binnig and Dr. Heinrich Rohrer invented STM in 1982 and AFM in 1986 at IBM Research Center in Zurich, Switzerland. These two techniques, STM and AFM, now form the core of what has come to be called the 'scanning probe microscopy (SPM)' family. SPM is not just the most powerful microscope for scientists to image atoms on surfaces, but is also becoming an indispensable tool for manipulating atoms and molecules to construct man-made materials and devices. Its impact has been felt in various fields, from surface physics and chemistry to nano-mechanics, nano-electronics and medical science. Its influence will surely extend further as the years go by, beyond the reach of our present imagination, and new research applications will continue to emerge. This book, therefore, is not intended to be a comprehensive review or textbook on SPM. Its aim is to cover only a selected part of the active re search fields of SPM and related topics in which I have been directly involved over the years. These include the basic principles of STM and AFM, and their applications to fullerene film growth, SiC surface reconstructions, MBE (molecular beam epitaxy) growth of CaAs, atomic scale manipulation of Si surfaces and meso scopic work function."

Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

In the last ten years, the physics and technology of low dimensional structures has experienced a tremendous development. Quantum structures with vertical and lateral confinements are now routinely fabricated with feature sizes below 100 run. While quantization of the electron states in mesoscopic systems has been the subject of intense investigation, the effect of confinement on lattice vibrations and its influence on the electron-phonon interaction and energy dissipation in nanostructures received atten tion only recently. This NATO Advanced Research Workshop on Phonons in Sem iconductor Nanostructures was a forum for discussion on the latest developments in the physics of phonons and their impact on the electronic properties of low-dimensional structures. Our goal was to bring together specialists in lattice dynamics and nanos tructure physics to assess the increasing importance of phonon effects on the physical properties of one-(lD) and zero-dimensional (OD) structures. The Workshop addressed various issues related to phonon physics in III-V, II-VI and IV semiconductor nanostructures. The following topics were successively covered: Models for confined phonons in semiconductor nanostructures, latest experimental observations of confined phonons and electron-phonon interaction in two-dimensional systems, elementary excitations in nanostructures, phonons and optical processes in reduced dimensionality systems, phonon limited transport phenomena, hot electron effects in quasi - ID structures, carrier relaxation and phonon bottleneck in quantum dots."

The 2001 Dutch Sensor Conference held on 14 -15 May 2001, at the University of Twente in Enschede, The Netherlands, is the fourth in a series ofmeetings. The conference is initiated by the Dutch Technology Foundation (STW) in order to stimulate the industrial application ofsensor research. This MESA Monograph contains a collection oflatest research and development from all major Dutch centers ofsensor research and aspect ofsensor commercialization. Thus it provides an excellent overview ofthe state ofthe art ofDutch Sensor Technology in the new millennium. I should like to acknowledge the work ofthe program committee, the local organizing committee and, ofcourse, the contributors to this volume. All ofthem made the conference a success. Prof. Dr. Miko Elwenspoek Conference Chairman Program Committee: M. Elwenspoek (Chairman) (MESA+) A.van den Berg (MESA+) PJ. French (TV Delft) P.V. Lambeck (MESA+) H. Leeuwis (3T) J.c. Lotters (Bronkhorst) HAC. Tilmans (IMEC) Contents MEASUREMENT SYSTEM FOR BIOCHEMICAL ANALYSIS BASED 1 ON CAPILLARY ELECTROPHORESIS AND MICROSCALE CONDUCTIVITY DETECTION F. Laugere, A. Berthold, R.M Guijt, E. Baltussen, J. Bastemeijer, P.M Sarro, MJ. Vellekoop ELECTRO-OSMOTIC FLOW CONTROL IN MICROFLUIDICS 7 SYSTEMS R.E. Oosterbroek,MH. Goedbloed, A. Trautmann, N.J. van der Veen, S Schlautmann, 1.W Berenschot, A. van den Berg FLOW SENSING USING THE TEMPERATURE DISTRIBUTION 13 ALONG A HEATED MICROBEAM J.J. van Baar, RJ Wiegerink,GJM Krijnen, T.SJ. Lammerink, M.C.

The photorefractive effect is now firmly established as one of the highest-sensitivity nonlinear optical effects, making it an attractive choice for use in many optical holographic processing applications. As with all technologies based on advanced materials, the rate of progress in the development of photorefractive applications has been principally limited by the rate at which breakthroughs in materials science have supplied better photorefractive materials. The last ten years have seen an upsurge of interest in photorefractive applications because of several advances in the synthesis and growth of new and sensitive materials. This book is a collection of many of the most important recent developments in photorefractive effects and materials. The introductory chapter, which provides the necessary tools for understanding a wide variety of photorefractive phenomena, is followed by seven contributed chapters that offer views of the state-of-the-art in several different material systems. The second chapter represents the most detailed study to date on the growth and photorefractive performance of BaTi03, one of the most important photorefractive ferroelectrlcs. The third chapter describes the process of permanently fixing holographic gratings in ferroelectrics, important for volumetric data storage with ultra-high data densities. The fourth chapter describes the discovery and theory of photorefractive spatial solitons. Photorefractive polymers are an exciting new class of photo refractive materials, described in the fifth chapter. Polymers have many advantages, primarily related to fabrication, that could promise a breakthrough to the marketplace because of ease and low-cost of manufacturing.

Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon. Other scientists have developed new methods for growing these thin films while yet others have developed new photovoltaic (PV) device structures with im proved conversion efficiencies. In the last two years, several companies have constructed multi-megawatt manufacturing plants that can produce large-area, multijunction amorphous silicon PV modules. A growing number of people be lieve that thin-film photovoltaics will be integrated into buildings on a large scale in the next few decades and will be able to make a major contribution to the world's energy needs. In this book, Ruud E. I. Schropp and Miro Zeman provide an authoritative overview of the current status of thin film solar cells based on amorphous and microcrystalline silicon. They review the significant developments that have occurred during the evolution of the technology and also discuss the most im portant recent innovations in the deposition of the materials, the understanding of the physics, and the fabrication and modeling of the devices.

The discovery by J. G. Bednorz and K. A. Mtllier in 1986 that the superconducting state can exist in oxides at temperatures above 30 K stimulated research in the field of superconductivity and opened up a new field of research. Within a few years a large number of cuprate superconductors with transition temperatures well above the boiling point of liquid nitrogen have been found. The possibility of using liquid nitrogen as coolant re-stimulated interest in power applications of supercon ductivity. In this book an overview of the known high-Te superconductors and their physical properties is presented. Aspects related to conductor fabrication and high-current applications are emphasised. The material should be suitable for use in graduate level courses on superconductivity. Researchers in the field may profit from the large number of tables and references describing its status at the end of 1997. An introduction to high-To superconductivity must be based on the fundamental physical principles of normal-state electrical conductivity and the well-known characteristics of conventional superconductors. In Chapter 2 this background is provided. Crystal structures, anisotropic properties and general trends of the critical temperatures of the cuprate superconductors are described in Chapters 3 and 4. The processing of superconductor powders addressed in Chapter 5 affects considerably the current-carrying capacity of high-T. wires. In Chapter 6 several fabrication techniques for superconducting wires are described. In addition, the factors limiting the transport critical currents ofhigh-Te wires are discussed.

Foldable Flex and Thinned Silicon Multichip Packaging Technology presents newly emerging methods used to make stacked chip packages in the so-called 2-1/2 D technology (3-D in physical format, but interconnected only through the circuits on folded flex). It is also being used in single chip packages where the thinness of the chips and the flex substrate made packages significantly thinner than through any other means.

Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the debate of critical issues in this still developing field. In this matter, I have been assisted greatly by the excellent series of articles provided by the different authors, who are widely recognized as some of the leaders in this vital area of research.

For the first time in book form, this comprehensive and systematic monograph presents the methods for the reversible synthesis of logic functions and circuits. This methodology offers designers the capability to solve major problems in system design now and in the future, such as the high rate of power consumption, and the emergence of quantum effects for highly dense ICs. The challenge addressed here is to design reliable systems that consume as little power as possible and in which the signals are processed and transmitted at very high speeds with very high signal integrity. Researchers in academia or industry and graduate students, who work in logic synthesis, computer design, computer-aided design tools, and low power VLSI circuit design, will find this book a valuable resource.

This seriesofbooks, which is publishedattherateofaboutoneper year, addresses fundamental problems in materialsscience.Thecontents coverabroadrangeoftopicsfromsmallclustersofatomstoengineering materials and involve chemistry, physics, materials science, and engineering,withlengthscalesrangingfromAngstromsuptomillimeters. Theemphasis is on basic scienceratherthan on applications. Each book focuses on a single areaofcurrent interest and brings together leading experts to give an up-to-date discussion oftheir work and the workof others. Each articlecontainsenough references thattheinterestedreader can access the relevant literature. Thanks are given to the Center for Fundamental Materials Research at Michigan State University for supportingthisseries. M.F.Thorpe,SeriesEditor E-mail:[email protected] EastLansing,Michigan,November2002 v PREFACE ThisvolumerecordsinvitedlecturesgivenattheNewThermoelectric(TE)Materials Workshopheld inTraverseCity,MichiganfromAugust17-21,2002.Thethemeofthe workshop was Chemistry, PhysicsandMaterials ScienceofThermoelectric Materials: Beyond Bismuth Telluride. The objective of this symposium was threefold. First, to examine and assess the ability of solid state chemistry to produce new generation materials for TE applications. Second, to rationalize and predict the charge and heat transportpropertiesofpotentialcandidatesandhypotheticalsystemsthroughsolidstate theoryandexperiment.Third,toidentifyandprioritizeresearchneededtoreachvarious levelsofrequirementsintermsofZTandtemperature.Theseobjectiveswereaddressed by a series of invited talks and discussions by leading experts from academia, governmentlaboratories,andindustry. Thereweretwenty-twoinvitedandeightposterpresentations inthe workshop.Out ofthese,sixteeninvitedpresentationsarerepresentedinthisvolume.Theycoverawide range of subjects, starting from synthesis (based on different strategies) and characterizationofnovel materials to acareful studyoftheir transport properties and electronicstructure.Topicsaddressingtheissueofmakingnew materialsare: synthetic search for new materials (di Salvo et aI.) and synthetic strategies based on phase homologies (Kanatzidis). The different classes of materials covered are: bismuth nanowires (Dresselhausetal.), unconventional high-temperaturethermoelectrics, boron carbides (Aselage et aI.) , layered cobalt oxides (Fujii et aI.), early transition metal antimonides(KleinkeetaI.),skutterudites(Uher),andclathratethermoelectrics(Nolas).

The behavior of polymer solutions in simple shear flows has been the subject of considerable research in the past. On the other hand, reports on polymers in elongational flow have appeared comparatively recently in the literature. Elongational flow with an inherent low vorticity is known to be more effective in extending polymer chains than simple shear flow and thus is more interesting from the point of view of basic (molecular chain dynamics at high deformation) and applied polymer science (rheology, fiber extrusion, drag reduction, flow through porous media). Undoubtly, one landmark in the field of polymer dynamics in elongational flow was the notion of critical strain-rate for chain extension, initially put forward by A. Peterlin (1966) and later refined into the "coil-stretching" transition by P. G. de Gennes and H. Hinch (1974). In the two decades which followed, significant progress in the understanding of chain conformation in "strong" flow has been accomplished through a combination of advances in instrumentation, computation techniques and theoretical studies. As a result of the multidisciplinary nature of the field, information on polymer chains in "strong" flow is accessible only from reviews and research papers scattered in disparate scientific journals. An important objective of this book is to remedy that situation by providing the reader with up-to-date knowledge in a single volume. The editors therefore invited leading specialists to provide both fundamental and applied information on the multiple facets of chain deformation in elongational flow.

With the development in the 1960s of ultrahigh vacuum equipment and techniques and electron, X-ray, and ion beam techniques to determine the structure and composition of interfaces, activities in the field of surface science grew nearly exponentially. Today surface science impacts all major fields of study from physical to biological sciences, from physics to chemistry, and all engineering disciplines. The materials and phenomena characterized by surface science range from se- conductors, where the impact of surface science has been critical to progress, to metals and ceramics, where selected contributions have been important, to bio- terials, where contributions are just beginning to impact the field, to textiles, where the impact has been marginal. With such a range of fields and applications, questions about sample selection, preparation, treatment, and handling are difficult to cover completely in one review article or one chapter. Therefore, the editors of this book have assembled a range of experts with experience in the major fields impacted by surface characterization. It is the only book which treats the subject of sample handling, preparation, and treatment for surface characterization. It is full of tricks, cautions, and handy tips to make the laboratory scientist's life easier. With respect to organization of the book, the topics range from discussion of vacuum to discussion of biological, organic, elemental or compound samples, to samples prepared ex situ or in situ to the vacuum, to deposition ofthin films. Generic considerations of sample preparation are also given.

Nonlinear Optics in Signal Processing covers the applications of nonlinear optics to optical processing in a range of areas including switching, computing, and telecommunications.