A beam of ions in the fonn of "canal rays" was first observed in 1886 by E. Goldstein. The first ion source was invented by J. J. Thomson in 1910. This ion source became the basis for the first widespread application of ion sources in mass spectrographs and mass spectrometers. The second important application of ion sources is ion accelerators, which since the beginning of the 1930s have been employed in research on nuclear reactions and are now used in industry and medicine. A third application of ion sources is in systems for isotope separation and re search on the interaction of atomic particles with solids (1940s). The result of this research and development is the use of ion sources in semiconductor doping, decontamination of surfaces, and micromachining of surfaces (1960s and' 1970s), which is a fourth area of applications for ion sources. The heating of plasmas in magnetic confinement devices to thennonuclear temperatures (100-1000 MK) with the aid of megawatt beams of hydrogen and deuterium ions and atoms has become a fifth promising area of application for ion sources which can produce ion beams with steady-state currents of up to 100 A. Finally, experimental and industrial research are under way on the alloying of metals and the fabrication of coatings which greatly improve the physical and chemical properties of metals. These coatings can increase the hardness, high temperature corrosion resistance, and wear resistance of metals, and can enhance or reduce friction, etc."

Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.

Flat-Panel Displays and CRTs, a review of electronic information display devices, is the first sys tematic and comprehensive coverage of the subject. It is intended to distill our wealth of knowledge of flat-panel displays and CRTs from their beginnings to the present state of the art. Historical perspective, theory of operation, and specific applications are all thoroughly covered. The field of display engineering is a multidisciplined technical pursuit with the result that its individual disciplines suffer from a lack of communications and limited perspective. Many previ ously developed standards for, and general understanding of, one technology are often inappro priate for another. Care has been taken here to document the old, incorporate the new, and emphasize commonalities. Criteria for performance have been standardized to enable an expert in one display technology, such as liquid crystals, to compare his device performance with that offered by another technology, such as electroluminescence. This book has been written with a second purpose in mind, to wit, to be the vehicle by means of which a new scientist or engineer can be introduced into the display society. It is organized to be tutorial for use in instructional situations. The first chapters begin with first principles and defini tions; the middle chapters set out requirements and criteria; and the last chapters give a complete description of each major technology."

Laser materials processing has made tremendous progress and is now at the forefront of industrial and medical applications. The book describes recent advances in smart and nanoscaled materials going well beyond the traditional cutting and welding applications. As no analytical methods are described the examples are really going into the details of what nowadways is possible by employing lasers for sophisticated materials processing giving rise to achievements not possible by conventional materials processing.

Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.

Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices, piezodevices, and electroluminescencedevices were discussed.

Fatigue Life Prediction of Solder Joints in Electronic Packages with ANSYS (R) describes the method in great detail starting from the theoretical basis. The reader is supplied with an add-on software package to ANSYS (R) that is designed for solder joint fatigue reliability analysis of electronic packages. Specific steps of the analysis method are discussed through examples without leaving any room for confusion. The add-on package along with the examples make it possible for an engineer with a working knowledge of ANSYS (R) to perform solder joint reliability analysis. Fatigue Life Prediction of Solder Joints in Electronic Packages with ANSYS (R) allows the engineers to conduct fatigue reliability analysis of solder joints in electronic packages.

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Thisvolumereportsthemajorpartofthescientificcontributionsofthefirstinternational workshoponSuperconductingNano-ElectronicsDevices(SNED)heldinNapoli,Italy,at theendofMay2001. Theaimoftheworkshopwastofocusonrecentexperimentalandtheoreticalresultsin thefieldofsuperconductingnano-electronicsdevices. Itcombinedphysicswithpresent andfuturetechnologicalapplications:bothfundamentalandappliedaspectswerecovered. SpecialemphasiswasgiventoquantumcoherenceandcomputationusingsmallJosephson junctions,noiseinultrasensitivenanodevicesandpossibilitiesofmakinguseofsupercon- ductivityinvariouson-chipdevices. Withtheseattributesandwithrecognizedinvited speakersintheirspecialtiestheworkshopmanagedtobringtogetheracollectionof scientistsfromnearbybutdistinctresearchcommunities. Thiswaytheatmosphereofthe workshopbecameveryopenanddiscussionswerelivelybothduringandoutsidethe sessions. Thisfreshdiscussionhopefullygaveeveryparticipantalotofnewideasfor furtherworkbackintheirhomeinstitutes. OneofthecentraltopicsintheworkshopwastheuseofdifferentJosephsonjunction configurationsasimplementationsofquantumbits. Atthetimeoftheworkshopwewere justwaitingforthesecondwaveofbreakthroughsinthisfield:theresultsemergingfrom theparticipatinglaboratoriesoftheworkshopjustatthetimeofthewritingofthispreface perhapsalsoprovetheusefulnessofourworkshop. Anotherfocuswasonvarioustopicsrelatedtoultrasensativedetectors. Theybring quantumlimitationstoapplications,andmanydeviceconceptsareresultsofunderstanding fundamentalandexcitingphenomenainsuperconductivity. Noiseandon-chipcooling wereexplicitlydiscussedinthedetectorsessionsaswell. ThechoiceofthelocationrecognizestheroleandthetraditionsofNapoliespeciallyin thefieldofmacroscopicquantumcoherence,oneofthemainissuesoftheworkshop. It furtherguaranteedtheparticipantsastimulatingatmosphereatthemeeting. Inconclusion,wewishtothanktheIstitutoItalianopergliStudiFilosofici,theIstituto diCiberneticadelConsiglioNazionaledelleRicerche,theUniversityofJyviiskylii,the IstitutoNazionalediFisicaNucleare,theIstitutoNazionalediFisicadellaMateria,the DipartimentoScienzeFisiche,andtheRettoratodell'UniversitadiNapoli"FedericoII" fortheirsupport. ThanksarealsoduetoAirLiquide,CRY,Nanoway,OxfordInstruments, andRaith. ThisinitiativeisintheframeoftheinternationalactivityofMQC2Association on"MacroscopicQuantumCoherenceandComputing. "WeareindebtedtoC. Granata v vi PREFACE and V. Coratoforscientificassistance,andtoF. Caiazzo,E. DeGrazia,andA. M. Mazzarellafortheirvaluableassistanceinallthetasksconnectedtotheorganizationofthe Workshop. WearealsogratefultoL. Longobardi,A. Monaco,S. Piscitelli,andS. Rombetto forhintsandhelpduringtheWorkshop. ThanksareduetoL. DeFelice,S. Luongo,and V. Sindonifortheorganizationofthesocialevent. J. Pekola B. Ruggiero P. Silvestrini CONTENTS QuantumNondemolitionMeasurementsofaQubit . D. V. Averin BayesianQuantumMeasurementofaSingle-Cooper-PairQubit 11 A. Korotkov lIfNoiseinJosephsonQubits 15 E. Paladino, L. Faoro,G. Falci,and R. Fazio SwitchingCurrentsandQuasi-ParticlePoisoningintheSuperconducting SingleElectronTransistor 25 P. Agren,J. Walter,V. Sch611mann,andD. B. Haviland JosephsonSystemsforQuantumCoherenceExperiments 33 V. Corato,C. Granata, L. Longobardi,M. Russo,B. Ruggiero, andP. Silvestrini SolidStateAnalogueofDoubleSlitInterferometer...43 K. Yu. Arutyunov, T. T. Hongisto,andJ. P. Pekola NoiseandMicrowavePropertiesofSET-Transistors...53 M. Ejrnres,M. T. Savolainen,andJ. Mygind UseofSmallThnnelJunctionsOperatingatT=0. 3K 63 R. Leoni,M. G. Castellano,F. Chiarello,andG. Torrioli AHystericSingleCooperPairTransistorforSingleShotReadingof 73 aCharge-Qubit A. Cottet,D. Vion,P. Joyez,D. Esteve,andM. H. Devoret SingleCooperPairElectrometerBasedonaRadio-Frequency-SQUID Scheme 87 A. B. Zorin vii viii CONTENTS PossibilityofSingle-ElectronDevicesandSuperconductingCoherence 97 Yu. A. Pashkin, Y. Nakamura,T. Yamamoto,andJ. S. Tsai Frequency-LockedCurrentofCooperPairsinSuperconductingSingle ElectronTransistorwithOhmicResistor...105 S. V. Lotkhov,S. A. Bogoslovsky, A. B. Zorin,andJ. Niemeyer SetupforExperimentsontheSupercurrent-PhaseRelationinBloch Transistors-StatusandPossibleApplications 115 M. Gotz, V. V. Khanin, A. B. Zorin,E. Il'ichev,S. A. Bogoslovsky, andJ. Niemeyer Single-ElectronTransistorsintheRegimeofHighConductance...123 C. Wallisser,B;Limblach,P. yomStein,and R. Schiifer SuperconductingTransistor-EdgeSensorsforTime&EnergyResolved Single-PhotonCountersandforDarkMatterSearches 133 B. Cabrera OptimizationoftheHot-ElectronBolometerandaCascadeQuasiparticle 145 L. Kuzrnin NoiseinRefrigeratingTunnelJunctionsandinMicrobolometers...153 D. V. Anghel NonequilibriumQuasiparticlesandElectronCoolingbyNormalMetal- SuperconductorTunnelJunctions...165 D. Golubevand A. Vasenko MesoscopicJosephsonJunctionsCoupledtoWeakCoherentFields: AnExampleofReciprocalDetection 175 R. Miglioreand A. Messina DynamicsofSuperconductingInterferometersContainingPi-Junctions 183 V. K. Kornev, I. I. Soloviev, I. V. Borisenko,P. B. Mozhaev, andG. A.

Readers intent on mastering the basics should start by reading the first few overview chapters and then delve into the descriptions of specific current applications to see how they actually work. Important future applications are also outlined, including information storage, materials for computer memories, quantum computers, isotopic fibers, isotopic optoelectronics, and quantum electronics.

Commercially successful fully synthetic polymeric materials were pro duced in the early years of this century, the first example being Bakelite. This was made from phenol and formaldehyde by Leo Bakeland in 1909. Before the end of the 1920s, a large number of other synthetic polymers had been created, including polyvinyl chloride and urea-formaldehyde. Today, there are literally hundreds of synthetic polymers commercially available with ranges of properties making them suitable for applications in many industrial sectors, including the electrical and electronics industries. In many instances the driving force behind the development of new materials actually came from the electronics industry, and today's advanced electronics would be inconceivable without these materials. For many years polymers have been widely used in all sectors of the electronics industry. From the early days of the semiconductor industry to the current state of the art, polymers have provided the enabling technologies that have fuelled the inexorable and rapid development of advanced electronic and optoelectronic devices."

Micromachined Ultrasound-Based Proximity Sensors presents a packaged ultrasound microsystem for object detection and distance metering based on micromachined silicon transducer elements. It describes the characterization, optimization and the long-term stability of silicon membrane resonators as well as appropriate packaging for ultrasound microsystems. Micromachined Ultrasound-Based Proximity Sensors describes a cost-effective approach to the realization of a micro electro mechanical system (MEMS). The micromachined silicon transducer elements were fabricated using industrial IC technology combined with standard silicon micromachining techniques. Additionally, this approach allows the cointegration of the driving and read-out circuitry. To ensure the industrial applicability of the fabricated transducer elements intensive long-term stability and reliability tests were performed under various environmental conditions such as high temperature and humidity. Great effort was undertaken to investigate the packaging and housing of the ultrasound system, which mainly determine the success or failure of an industrial microsystem. A low-stress mounting of the transducer element minimizes thermomechanical stress influences. The developed housing not only protects the silicon chip but also improves the acoustic performance of the transducer elements. The developed ultrasound proximity sensor system can determine object distances up to 10 cm with an accuracy of better than 0.8 mm. Micromachined Ultrasound-Based Proximity Sensors will be of interest to MEMS researchers as well as those involved in solid-state sensor development.

This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis.

This volume deals with the basic knowledge and understanding of fundamental interactions of low energy electrons with molecules. It pro vides an up-to-date and comprehensive account of the fundamental in teractions of low-energy electrons with molecules of current interest in modern technology, especially the semiconductor industry. The primary electron-molecule interaction processes of elastic and in elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are discussed, and state-of-the art authoritative data on the cross sections of these processes as well as on rate and transport coefficients are provided. This fundamental knowledge has been obtained by us over the last eight years through a critical review and comprehensive assessment of "all" available data on low-energy electron collisions with plasma processing gases which we conducted at the National Institute of Standards and Technology (NIST). Data from this work were originally published in the Journal of Physical and Chemical Reference Data, and have been updated and expanded here. The fundamental electron-molecule interaction processes are discussed in Chapter 1. The cross sections and rate coefficients most often used to describe these interactions are defined in Chapter 2, where some recent advances in the methods employed for their measurement or calculation are outlined. The methodology we adopted for the critical evaluation, synthesis, and assessment of the existing data is described in Chapter 3. The critically assessed data and recommended or suggested cross sections and rate and transport coefficients for ten plasma etching gases are presented and discussed in Chapters 4, 5, and 6."

It is now firmly established that various adsorptive and catalytic processes taking place on the surface of semiconductors and in MIS structures strongly influence their electronic properties and hence modify the parameters of semi conductor devices. The inverse problem of how the semiconductor's electronic subsystem influences adsorption and dissociation of molecules at the surface has been recognized but much less explored. The main purpose of the present book is to generalize the experimental data and explain the relationship be tween these two classes of phenomena. We also discuss tentative models of surface electronic states and their interaction with adsorbed molecules. The subject of this book should attract the attention of researchers work ing in the overlapping areas of physics and chemistry, and of physics and biology. The research done in this field will help to widen the scope of semi conductor applications by finding novel ways of employing surface effects in the construct ion of mi croe 1 ectroni c devi ces, semi conductor gas ana lysers, solar cells, etc. The authors hope that this book will be useful to a wide circle of chemists and physicists concerned with the study of interphase phenomena and questions of adsorption and catalysis. Certain parts of the book will be helpful to physicists and technicians working in rapidly developing branches of semicon ductor physics and technology. The book can also serve as a textbook for both under- and postgraduates speci al i zi ng in thi s fi e 1 d."

The sixth Advanced Study Institute (ASI) on Techniques and Concepts of High Energy Physics was held at the Club St. Croix, in St. Croix, U.S. Virgin Islands. The ASI brought together a total of 70 participants, from 21 different countries. Despite logistical problems caused by hurricane Hugo, it was a very successful meeting. Hugo's destruction did little to dampen the dedication of the inspiring lecturers and the exceptional enthusiasm of the student body; nevertheless, the immense damage caused to the beautiful island was very saddening indeed. The primary support for the meeting was again provided by the Scientific Affairs Division of NATO. The ASI was cosponsored by the U.S. Department of Energy, by Fermilab, by the National Science Foundation, and by the University of Rochester. A special contribution from the Oliver S. and Jennie R. Donaldson Charitable Trust provided an important degree of flexibility, as well as support for worthy students from developing countries. As in the case of the previous ASls, the scientific program was designed for advanced graduate students and recent PhD recipients in experimental particle physics. The present volume of lectures should complement the material published in the first five ASls, and prove to be of value to a wider audience of physicists.

There is no paucity of books on high pressure. Beginning with P. W. Bridgman's The Physics of High Pressure, books of general interest include the two-volume Physics and Chemistry of High Pressure, edited by R. S. Bradley, and the series, Advances in High Pressure Research, as well as the report on the Lake George Conference in 1960. Solid state physics is well represented by Solids Under Pressure, edited by Paul and Warschauer, by Physics of Solids at High Pressure, edited by Tomizuka and Emrick, and by Properties Physiques des Solides sous Pression, edited by Bloch, as well as by chapters in Volumes 6, 13, 17, and 19 of Solid State Physics, edited by Seitz, Turnbull, and Ehrenreich. Chemistry in gases and liquids is covered in Weale's Chemical Reactions at High Pressure, and Hamann's Physico-chemical Effects of Pressure. In addition to the coverage of techniques and calibrations in the above volumes, Modern Very High Pressure Techniques, edited by Wentorf, High Pressure Methods in Solid State Research, by C. C. Bradley, The Accurate Characterization of the High Pressure Environment, edited by E. C. Lloyd, and a chapter in Volume 11 of Solid State Physics are devoted entirely to this facet of high pressure research. It is not our plan either to supersede or extend these approaches. It is our purpose here to discuss the effect of high pressure on the electronic properties of solids.

S. Di Bella, C. Dragonetti, M. Pizzotti, D. Roberto, F. Tessore, R. Ugo: Coordination and Organometallic Complexes as Second-Order Nonlinear Optical Molecular Materials.- M. G. Humphrey, M.P. Cifuentes, M. Samoc: NLO Molecules and Materials Based on Organometallics: Cubic NLO Properties.- L. Murphy, J. A. G. Williams: Luminescent Platinum Compounds: From Molecules to OLEDs. - Z. Liu, Z. Bian, C. Huang: Luminescent Iridium Complexes and Their Applications.- N. C. Fletcher, M. C. Lagunas: Chromo- and Fluorogenic Organometallic Sensors.- V. Guerchais, H. Le Bozec: Metal Complexes Featuring Photochromic Ligands.

Moisture Sensitivity of Plastic Packages of IC Devices provides information on the state-of-the-art techniques and methodologies related to moisture issues in plastic packages. The most updated, in-depth and systematic technical and theoretical approaches are addressed in the book. Numerous industrial applications are provided, along with the results of the most recent research and development efforts, including, but not limited to: thorough exploration of moisture's effects based on lectures and tutorials by the authors, consistent focus on solution-based approaches and methodologies for improved reliability in plastic packaging, emerging theories and cutting-edge industiral applications presented by the leading professionals in the field. Moisture plays a key role in the reliability of plastic packages of IC devices, and moisture-induced failures have become an increasing concern with the development of advanced IC devices. This second volume in the Micro- and Opto-Electronic Materials, Structures, and Systems series is a must-read for researchers and engineers alike.

This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

This book covers the field of solar production of hydrogen by water photo-splitting (photoelectrolysis) using semiconductor photoanodes. The emphasis of the discussion is on the use of nanotechnology in the field. The theories behind photocatalysis and photoelectrochemical processes responsible for hydrogen production are given in detail. This provides a state-of-the-art review of the semiconductor materials and methods used for improving the efficiency of the processes. The book also gives an account of the techniques used for making the nanostructures.

Silicon technology has developed along virtually one single line: reducing the minimal size of lithographic features. But has this taken us to the point of diminishing returns? Are we now at a turning point in the logical evolution of microelectronics? Some believe that the semiconductor microelectronics industry has matured: the research game is over (comparisons with the steel industry are being made). Others believe that qualitative progress in hardware technology will come roaring back, based on innovative research. This debate, spirited as it is, is reflected in the pages of Future Trends in Microelectronics, where such questions are discussed. What kind of research does the silicon industry need to continue its expansion? What is the technical limit to shrinking Si devices? Is there any economic sense in pursuing this limit? What are the most attractive applications of optoelectronic hybrid systems? Are there any green pastures beyond the traditional semiconductor technologies? Identifying the scenario for the future evolution of microelectronics will present a tremendous opportunity for constructive action today.

Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.

There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth. Other work concerns electronic compo nent and circuit developments with SiC. Preliminary results have proved interesting. This book attempts to present the possibilities of such circuitry. Some of the solutions obtained so far are directly usable for the many applications where high environmental temperatures exist. Other concepts, particularly the more demanding ones, such as operation above 500 DegreesC, still need much more researching. This also concerns estimates of device lifetimes for con tinuous high temperature operation. This book may help the potential user of such circuitry to find a suitable solution. It should also stimulate more research groups to enter this demanding effort. And finally, it should stimulate a broad awareness of the need and the solutions for this type of electronics. That is why Part One is devoted to high temperature applications.