In the rapidly developing information society there is an ever-growing demand for information-supplying elements or sensors. The technology to fabricate such sensors has grown in the past few decades from a skilful activity to a mature area of scientific research and technological development. In this process, the use of silicon-based techniques has appeared to be of crucial importance, as it introduced standardized (mass) fabrication techniques, created the possibility of integrated electronics, allowed for new transduction principles, and enabled the realization of micromechanical structures for sensing or actuation. Such micromechanical structures are particularly well-suited to realize complex microsystems that improve the performance of individual sensors. Currently, a variety of sensor areas ranging from optical to magnetic and from micromechanical to (bio)chemical sensors has reached a high level of sophistication. In this MESA Monograph the proceedings of the Dutch Sensor Conference, an initiative of the Technology Foundation (STW), held at the University of Twente on March 2-3, 1998, are compiled. It comprises all the oral and poster contributions of the conference, and gives an excellent overview of the state of the art of Dutch sensor research and development. Apart from Dutch work, the contributions of two external invited experts from Switzerland are included.

The International Workshop on Coherent Control of Carrier Dynamics in Semiconductors was held May 19 to 22, 1998 at the University of Illinois at Chicago. Its intent was to bring together an international and interdisciplinary group of scientists to discuss recent progress, pertinent problems, and open questions in the field of coherent control in atoms, molecules, and semiconductors, in particular. Twenty-seven scientists from the physical chemistry, quantum optics, semiconductor, electrical engineering, and laser communities accepted our invitation and made this event a meeting of exciting presentations and vivid discussions. This volume contains the proceedings of this workshop. Most speakers accepted our invitation to provide a manuscript either on specific aspects of their work or a brief review of their area of research. All manuscripts were reviewed. It is hoped that they provide not merely an overview of most of the issues covered during the workshop, but also represent an account of the current state of coherent control in general. Hence, it is hoped that they are also of interest to a large number of scientists active in one of the areas listed above. The organizers of this workshop would like to thank all the participants for making this meeting a complete success. We are particularly indebted to Dr. Larry R. Cooper at the U.S. Office of Naval Research and Dr.

MICROELECTRONIC INTERCONNECTIONS AND MICROASSEMBL Y WORKSHOP 18-21 May 1996, Prague, Czech Republic Conference Organizers: George Harman, NIST (USA) and Pavel Mach (Czech Republic) Summary of the Technical Program Thirty two presentations were given in eight technical sessions at the Workshop. A list of these sessions and their chairpersons is attached below. The Workshop was devoted to the technical aspects of advanced interconnections and microassembly, but also included papers on the education issues required to prepare students to work in these areas. In addition to new technical developments, several papers presented overviews predicting the future directions of these technologies. The basic issue is that electronic systems will continue to be miniaturized and at the same time performance must continue to improve. Various industry roadmaps were discussed as well as new smaller packaging and interconnection concepts. The newest chip packages are often based on the selection of an appropriate interconnection method. An example is the chip-scale package, which has horizontal (x-y) dimensions,;; 20% larger than the actual silicon chip itself. The chip is often flip-chip connected to a micro ball-grid-array, but direct chip attach was described also. Several papers described advances in the manufacture of such packages.

Magnetostatic Waves and their Applications is the first book devoted to magnetostatic waves. The book gives a thorough review of the field suitable for scientists, engineers and advanced students involved in magnetism and microwave electronics new to this area. It covers the field from essential physics to applications in microwave electronics, with details of the materials and materials processing methods included.

This 1993 book shows how formal logic can be used to specify the behaviour of hardware designs and reason about their correctness. A primary theme of the book is the use of abstraction in hardware specification and verification. The author describes how certain fundamental abstraction mechanisms for hardware verification can be formalised in logic and used to express assertions about design correctness and the relative accuracy of models of hardware behaviour. His approach is pragmatic and driven by examples. He also includes an introduction to higher-order logic, which is a widely used formalism in this subject, and describes how that formalism is actually used for hardware verification. The book is based in part on the author's own research as well as on graduate teaching. Thus it can be used to accompany courses on hardware verification and as a resource for research workers.

This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F33615-70-C-1348. The work was administered under the direc tion of the Air Force Materials Laboratory, Air Force Systems Command, Wright Patterson Air Force Base, Ohio, with Mr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is adesignated Information Analysis Center of the Department of Defense, authorized to provide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experimental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information gene rally regarded as being in the area of devices and/or circuitry is excluded. Grateful acknowledgement is made for the review and comments by Dr. Victor Rehn of the U. S. Naval Ordnance Test Station at China Lake, California, as weIl as for review by staff members of the National Bureau of Standards, National Standard Data Reference System. v CONTENTS Introduction . *. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Composite Data Table. . . . . . . . . . . . . . . . . . . . . . . . . 5 Diamond. . . . . . . . *. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Bibliography . . . . . . *. . . . . . . . . . . . . . . . . . . . . . . 11 Germanium . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Bibliography . . . . . . . . *. . . . . . . . . . . . . . . . . . . . . 28 Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Silicon, as an electronic substrate, has sparked a technological revolution that has allowed the realization of very large scale integration (VLSI) of circuits on a chip. These 6 fingernail-sized chips currently carry more than 10 components, consume low power, cost a few dollars, and are capable of performing data processing, numerical computations, and signal conditioning tasks at gigabit-per-second rates. Silicon, as a mechanical substrate, promises to spark another technological revolution that will allow computer chips to come with the eyes, ears, and even hands needed for closed-loop control systems. The silicon VLSI process technology which has been perfected over three decades can now be extended towards the production of novel structures such as epitaxially grown optoelectronic GaAs devices, buried layers for three dimensional integration, micromechanical mechanisms, integrated photonic circuits, and artificial neural networks. This book begins by addressing the processing of electronic and optoelectronic devices produced by using lattice mismatched epitaxial GaAs films on Si. Two viable technologies are considered. In one, silicon is used as a passive substrate in order to take advantage of its favorable properties over bulk GaAs; in the other, GaAs and Si are combined on the same chip in order to develop IC configurations with improved performance and increased levels of integration. The relationships between device operation and substrate quality are discussed in light of potential electronic and optoelectronic applications.

This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.

Summary of the recent progress in ceramics research. Several novel concepts for materials selection and microstructural design are presented, as are experimental results that substantiate the ideas.

This volume contains the papers presented at the First Mexico-U.S.A. Symposium on Materials Sciences and Engineering held in Ixtapa, Guerrero, Mexico, during Septem ber 24-27, 1991. The conference was conceived with the primary objective of increas ing the close ties between scientists and engineers in both Mexico and the U.S. with an interest in materials. The conference itself would have not taken place without the drive, determination and technical knowledge of John K. Tien of the University of Texas at Austin and of Francisco Mejia Lira of the Universidad de San Luis Potosi. This book is dedicated to their memory. The event brought together materials scientists and engineers with interests in a broad range of subjects in the processing, characterization and properties of advanced materials. Several papers were dedicated to structural materials ranging from ferrous alloys to intemetallics, ceramics and composites. The presentation covered properties, processing, and factors that control their use, such as fatigue and corrosion. Other materials and properties were also explored by U.S. and Mexican participants. Sev eral papers dealt with the characterization and properties of magnetics, optical and superconductor materials, nanostructured materials, as well as with computational and theoretical aspects likely to impact future materials research and development."

Integrated circuits are finding ever wider applications through a range of industries. Introduction to VLSI Process Engineering presents the design principles for devices, describes the overall VLSI process, and deals with the essential manufacturing technologies and inspection procedures.

This volume focuses on modeling processes for which transport is one of the most complicated components, requiring different transport models in each region. The authors apply questions to a wide variety of application areas, such as semiconductors, plasmas, fluids, chemically reactive gases, etc.

The workshop on "Optical Properties of Low Dimensional Silicon sL Structures" was held in Meylan, France on March, I yd, 1993. The workshop took place inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement and CNET gave also a small financial grant, the organisational part being undertaken by the SEE and CNET. There is currently intense research activity worldwide devoted to the optical properties of low dimensional silicon structures. This follow the recent discovery of efficient visible photoluminescence (PL) from highly porous silicon. This workshop was intended to bring together all the leading European scientists and laboratories in order to reveal the state of the art and to open new research fields on this subject. A large number of invited talks took place (12) together with regular contribution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions between the participants.

IMA Volumes 135: Transport in Transition Regimes and 136: Dispersive Transport Equations and Multiscale Models focus on the modeling of processes for which transport is one of the most complicated components. This includes processes that involve a wdie range of length scales over different spatio-temporal regions of the problem, ranging from the order of mean-free paths to many times this scale. Consequently, effective modeling techniques require different transport models in each region. The first issue is that of finding efficient simulations techniques, since a fully resolved kinetic simulation is often impractical. One therefore develops homogenization, stochastic, or moment based subgrid models. Another issue is to quantify the discrepancy between macroscopic models and the underlying kinetic description, especially when dispersive effects become macroscopic, for example due to quantum effects in semiconductors and superfluids. These two volumes address these questions in relation to a wide variety of application areas, such as semiconductors, plasmas, fluids, chemically reactive gases, etc.

Boron has all the best tunes. That may well be the first impression of the Group 13 elements. The chemical literature fosters the impression not only in the primary journals, but also in asteady outflowofbooks focussing more or less closely on boron and its compounds. The same preoccupation with boron is apparent in the coverage received by the Group 13 elements in the comprehensive and regularly updated volume of the Gmelin Handbook. Yet such an imbalance cannot be explained by any inherent lack ofvariety, interest or consequence in the 'heavier elements. Aluminium is the most abundant metal in the earth's crust; in the industrialised world the metal is second only to iron in its usage, and its compounds can justifiably be said to touch our lives daily - to the potential detriment of those and other lives, some would argue. From being chemical curios, gallium and indium have now gained considerably prominence as sources of compound semiconductors like gallium arsenide and indium antimonide. Nor is there any want ofincident in the chemistriesofthe heavier Group 13 elements. In their redox, coordination and structural properties, there is to be found music indeed, notable not always for its harmony but invariably for its richness and variety. Thisbook seeks to redress the balance with a definitive, wide-rangingand up-to-date review of the chemistry of the Group 13 metals aluminium, gallium, indium and thallium.

In November 2001 the Mathematical Research Center at Oberwolfach, Germany, hosted the third Conference on Mathematical Models and Numerical Simulation in Electronic Industry. It brought together researchers in mathematics, electrical engineering and scientists working in industry.

The contributions to this volume try to bridge the gap between basic and applied mathematics, research in electrical engineering and the needs of industry.

In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.

For the eighth Advanced Study Institute (ASI) on Techniques and Concepts of High-Energy Physics we returned once again to the Hotel on the Cay on that speck of land in the harbor of Christiansted, St. Croix, U. S. Virgin Islands. This time, the ASI brought together a total of 73 participants, from 21 countries. The primary support for the meeting was provided, as usual, by the Scientific Affairs Division of the North Atlantic Treaty Organization (NATO). The ASI was cosponsored by the U. S. Department of Energy, by the Fermi National Accelerator Laboratory (Fermilab), by the U. S. National Science Foundation, and by the University of Rochester. A special contribution from the Oliver S. and Jennie R. Donaldson Charitable Trust provided an important degree of flexibility, as well as support for worthy students from developing countries. In addition, the International Science Foundation contributed very generously to the support of a participant from Russia. As in the case of the previous ASls, the scientific program was designed for advanced graduate students and recent PhD recipients in experimental particle physics. The present volume of lectures, although, unfortunately, short of three contributions, should complement the material published in the first seven ASIs, and prove to be of value to a wider audience of physicists. It is a pleasure to acknowledge the encouragement and support that I have continued to receive from colleagues and friends in organizing this meeting.

Broadband Integrated Services Digital Network (B-ISDN) is conceived as an all-purpose digital network supporting interactive and distributive services, bursty and continuous traffic, connection-oriented and connectionless services, all in the same network. The concepts of ISDN in general and B-ISDN in particular have been evolving since CCIIT adopted the rrrst set ofISDN recommendations in 1984. Thirteen recommendations outlining the fundamental principles and initial specifications for B-ISDN were approved in 1990, with Asynchronous Transfer Mode (ATM) being the transfer mode of choice for B-ISDN. It seems fair to say that B-ISDN concepts have changed the face of networking. The expertise we have developed for a century on telephone systems and over a number of decades on packet networks is proving to be insufficient to deploy and operate the envisioned B-ISDNs. Much more needs to be understood and satisfactorily addressed before ATM networks can become a reality. Tricomm'93 is dedicated to A TM networks. The technical program consists of invited papers addressing a large subset of issues of practical importance in the deployment of ATM networks. This is the sixth in a series of Research Triangle Conferences on Computer Communications, which emerged through the efforts of the local chapter of IEEE Communications Society.

The quality of physical models is decisive for the understanding of the physical processes in semiconductor devices and for a reliable prediction of the behavior of a new generation of devices. The first part of the book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work, an extensive collection of widely used models is discussed in terms of physical accuracy and application results. The second part outlines the derivation of physics-based models for bulk mobility, band-to-band tunneling, defect-assisted tunneling, thermal recombination, non-ideal metal-semiconductor contact, and direct and multiphonon-assisted tunneling through insulating layers, all from a microscopic level. The models are compared with experimental data and applied to a number of simulation examples. This part also describes some new approaches of "taylored quantum mechanics for deriving device models from "first principles and the fundamental problems therein."

From the reviews: "This is a well written book offering a clear and detailed insight into physical processes and numerical procedures essential to the single-electron dynamics in electro-conducting media." Zentralblatt fur Mathematik und ihre Grenzgebiete "

The traditional use of organic colorants is to impart color to a substrate such as textiles, paper, plastics, and leather. However, in the last five years or so organic colorants have become increasingly important in the high technology (hi-tech) industries of electronics and particularly reprographics. In some of these reprographics applications the organic colorant is used in its traditional role of imparting color to a substrate, typically paper or plastic. Examples are dyes for ink-jet printing, thermally transferable dyes for thermal transfer printing, and dyes and pigments for colored toners in photocopiers and laser printers. In other applications it is a special effect of an organic colorant that is utilized, not its color. Examples are electrical effects, such as photoconduction and the electrostatic charging of toners, both of which are essential features for the operation of photocopiers and laser printers, and the selective absorption of infrared radiation, which is utilized in optical data storage. In electronic applications the organic colorant is often employed in a device. Typical examples include liquid crystal dyes, laser dyes, electro chromic dyes, dyes for solar cells, dyes for micro color filters, and dyes for nonlinear optical applications."

In the last ten years, the physics and technology of low dimensional structures has experienced a tremendous development. Quantum structures with vertical and lateral confinements are now routinely fabricated with feature sizes below 100 run. While quantization of the electron states in mesoscopic systems has been the subject of intense investigation, the effect of confinement on lattice vibrations and its influence on the electron-phonon interaction and energy dissipation in nanostructures received atten tion only recently. This NATO Advanced Research Workshop on Phonons in Sem iconductor Nanostructures was a forum for discussion on the latest developments in the physics of phonons and their impact on the electronic properties of low-dimensional structures. Our goal was to bring together specialists in lattice dynamics and nanos tructure physics to assess the increasing importance of phonon effects on the physical properties of one-(lD) and zero-dimensional (OD) structures. The Workshop addressed various issues related to phonon physics in III-V, II-VI and IV semiconductor nanostructures. The following topics were successively covered: Models for confined phonons in semiconductor nanostructures, latest experimental observations of confined phonons and electron-phonon interaction in two-dimensional systems, elementary excitations in nanostructures, phonons and optical processes in reduced dimensionality systems, phonon limited transport phenomena, hot electron effects in quasi - ID structures, carrier relaxation and phonon bottleneck in quantum dots."

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

There have been many books published on scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related subjects since Dr. Cerd Binnig and Dr. Heinrich Rohrer invented STM in 1982 and AFM in 1986 at IBM Research Center in Zurich, Switzerland. These two techniques, STM and AFM, now form the core of what has come to be called the 'scanning probe microscopy (SPM)' family. SPM is not just the most powerful microscope for scientists to image atoms on surfaces, but is also becoming an indispensable tool for manipulating atoms and molecules to construct man-made materials and devices. Its impact has been felt in various fields, from surface physics and chemistry to nano-mechanics, nano-electronics and medical science. Its influence will surely extend further as the years go by, beyond the reach of our present imagination, and new research applications will continue to emerge. This book, therefore, is not intended to be a comprehensive review or textbook on SPM. Its aim is to cover only a selected part of the active re search fields of SPM and related topics in which I have been directly involved over the years. These include the basic principles of STM and AFM, and their applications to fullerene film growth, SiC surface reconstructions, MBE (molecular beam epitaxy) growth of CaAs, atomic scale manipulation of Si surfaces and meso scopic work function."