Nanoscale Science and Technology summarizes six years of active research sponsored by NATO with the participation of the leading experts. The book provides an interdisciplinary view of several aspects of physics at the atomic scale. It contains an overview of the latest findings on the transport of electrons in nanowires and nanoconstrictions, the role of forces in probe microscopy, the control of structures and properties in the nanometer range, aspects of magnetization in nanometric structures, and local probes for nondestructive measurement as provided by light and metal clusters near atomic scales.

Quickly becoming the hottest topic of the new millennium (2.4 billion dollars funding in US alone)

Current status and future trends of micro and nanoelectronics research

Written by leading experts in the corresponding research areas

Excellent tutorial for graduate students and reference for "gurus"

Provides a broad overlook and fundamentals of nanoscience and nanotechnology from chemistry to electronic devices

Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.

The sixth Advanced Study Institute (ASI) on Techniques and Concepts of High Energy Physics was held at the Club St. Croix, in St. Croix, U.S. Virgin Islands. The ASI brought together a total of 70 participants, from 21 different countries. Despite logistical problems caused by hurricane Hugo, it was a very successful meeting. Hugo's destruction did little to dampen the dedication of the inspiring lecturers and the exceptional enthusiasm of the student body; nevertheless, the immense damage caused to the beautiful island was very saddening indeed. The primary support for the meeting was again provided by the Scientific Affairs Division of NATO. The ASI was cosponsored by the U.S. Department of Energy, by Fermilab, by the National Science Foundation, and by the University of Rochester. A special contribution from the Oliver S. and Jennie R. Donaldson Charitable Trust provided an important degree of flexibility, as well as support for worthy students from developing countries. As in the case of the previous ASls, the scientific program was designed for advanced graduate students and recent PhD recipients in experimental particle physics. The present volume of lectures should complement the material published in the first five ASls, and prove to be of value to a wider audience of physicists.

S. Di Bella, C. Dragonetti, M. Pizzotti, D. Roberto, F. Tessore, R. Ugo: Coordination and Organometallic Complexes as Second-Order Nonlinear Optical Molecular Materials.- M. G. Humphrey, M.P. Cifuentes, M. Samoc: NLO Molecules and Materials Based on Organometallics: Cubic NLO Properties.- L. Murphy, J. A. G. Williams: Luminescent Platinum Compounds: From Molecules to OLEDs. - Z. Liu, Z. Bian, C. Huang: Luminescent Iridium Complexes and Their Applications.- N. C. Fletcher, M. C. Lagunas: Chromo- and Fluorogenic Organometallic Sensors.- V. Guerchais, H. Le Bozec: Metal Complexes Featuring Photochromic Ligands.

The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success."

Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.

Mechanism of charge transport in organic solids has been an issue of intensive interests and debates for over 50 years, not only because of the applications in printing electronics, but also because of the great challenges in understanding the electronic processes in complex systems. With the fast developments of both electronic structure theory and the computational technology, the dream of predicting the charge mobility is now gradually becoming a reality. This volume describes recent progresses in Prof. Shuai's group in developing computational tools to assess the intrinsic carrier mobility for organic and carbon materials at the first-principles level. According to the electron-phonon coupling strength, the charge transport mechanism is classified into three different categories, namely, the localized hopping model, the extended band model, and the polaron model. For each of them, a corresponding theoretical approach is developed and implemented into typical examples.

This second volume of the series on photorefractive effects focuses on the most recent developments in the field and highlights the parameters which govern the photoinduced nonlinearity. Besides reviewing conventional electro-optic crystals, this book deals with organic photorefractive materials, giving an in-depth assessment of the present understanding of the effect in a variety of materials. The materials considered in this volume will play a significant role in the development of applications such as presented in the third volume.

Millimeter-Wave Waveguides is a monograph devoted to open waveguides for millimeter wave applications. In the first chapters, general waveguide theory is presented (with the emphasis on millimeter wave applications). Next, the book systematically describes the results of both theoretical and experimental studies of rectangular dielectric rod waveguides with high dielectric permittivities. Simple and accurate methods for propagation constant calculations for isotropic as well as anisotropic dielectric waveguides are described. Both analytical and numerical approaches are covered. Different types of transitions have been simulated in order to find optimal configurations as well as optimal dimensions of dielectric waveguides for the frequency band of 75-110 GHz. Simple and effective design is presented. The experimental studies of dielectric waveguides show that Sapphire waveguide can be utilized for this frequency band as a very low-loss waveguide. Design of antennas with low return loss based on dielectric waveguides is also described.

Testing of Integrated Circuits is important to ensure the production of fault-free chips. However, testing is becoming cumbersome and expensive due to the increasing complexity of these ICs. Technology development has made it possible to produce chips where a complete system, with an enormous transistor count, operating at a high clock frequency, is placed on a single die - SOC (System-on-Chip). The device size miniaturization leads to new fault types, the increasing clock frequencies enforces testing for timing faults, and the increasing transistor count results in a higher number of possible fault sites. Testing must handle all these new challenges in an efficient manner having a global system perspective.

Test design is applied to make a system testable. In a modular core-based environment where blocks of reusable logic, the so called cores, are integrated to a system, test design for each core include: test method selection, test data (stimuli and responses) generation (ATPG), definition of test data storage and partitioning off-chip as ATE (Automatic Test Equipment) and/or on-chip as BIST (Built-In Self-Test)], wrapper selection and design (IEEE std 1500), TAM (test access mechanism) design, and test scheduling minimizing a cost function whilst considering limitations and constraint. A system test design perspective that takes all the issues above into account is required in order to develop a globally optimized solution.

SOC test design and its optimization is the topic of this book. It gives an introduction to testing, describes the problems related to SOC testing, discusses the modeling granularity and the implementation into EDA (electronic design automation) tools. The book is divided into three sections: i) test concepts, ii) SOC design for test, and iii) SOC test applications. The first part covers an introduction into test problems including faults, fault types, design-flow, design-for-test techniques such as scan-testing and Boundary Scan. The second part of the book discusses SOC related problems such as system modeling, test conflicts, power consumption, test access mechanism design, test scheduling and defect-oriented scheduling. Finally, the third part focuses on SOC applications, such as integrated test scheduling and TAM design, defect-oriented scheduling, and integrating test design with the core selection process.

Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir, cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system."

Proceedings of the NATO Advanced Study Institute on New Trends and Applications of Photoelectrochemistry and Photocatalysis for Environment Problems, Cafelu, Palermo, Italy, September 6-18, 1987

Provided here is a comprehensive treatise on all aspects of dielectric properties of wood and wood products. The topics covered include: Interaction between electromagnetic field and wood. - Wood composition and dielectric properties of its components. - Measurement of dielectric parameters of wood.- Dielectric properties of oven-dry wood. - Dielectric properties of moist wood. - Effect of different kinds of treatment on dielectric properties of wood. - Dielectric properties of bark. - Dielectric properties of wood-based materials. - Recommendations for determination of dielectric parameters of wood based materials and for their use in calculations. Several appendices comprise reference data onthe dielectric characteristics of wood and wood-based materials in the wide range of frequencies, temperatures, and moisture content.

The impact of Materials Science in our environment has probably never been as massive and decisive as it is today. In every aspect of our lives, progress has never been so dependent on the techniques involved in producing ever more sophisticated materials in ever larger quantities, nor so demanding for technologists to imagine novel processes and circumvent difficulties, or take up new challenges. Every technique is based on a physical process which is put into practice and optimized. The better we know that process, the better the optimization, and more powerful the technique. Laser processing of materials is inscribed in that context. As soon as powerful coherent light sources were made available, it was realized that such intense sources of energy could be used to "heat, melt and crystallize" materials, i.e., to promote phase transitions in atomic systems. As early as 1964, attempts in that direction were made but received very little (if any) attention. Reasons for this lack of interest were several. For one thing, laser technology was not fully developed, so that the process offered poor reliability and no versatility. Also, improving the existing techniques was believed to be sufficient to meet the needs of the time, and there was no real motivation to explore new ways. Finally, and more important, the fundamentals of the physics behind the scenes were, and continue to be, way out of the runni g stream.

According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between the 1- and 90-nanometer nodes. One of the prime reasons is the low dielectric constant of SiO - thechoice dielectricof all modern electronics. This book presents materials 2 fundamentals of the novel gate dielectrics that are being introduced into semic- ductor manufacturing to ensure the Moore's law scaling of CMOS devices. This is a very rapidly evolving?eld of research and we try to focus on the basicundersta- ing of structure, thermodynamics, and electronic properties of these materials that determine their performance in the device applications. Thevolume was conceivedin 2001 afteraSymposium on Alternative Gate - electrics we had at the American Physical Society March Meeting in Seattle, upon the suggestion of the Kluwer editor Sabine Freisem. After several discussions we decided that such a bookindeed would be useful as long as we could focus on the fundamental side of the problem and keep the level of the discussion accessible to graduate students andavariety of professionals from different ?elds. The problem of?nding a replacement for SiO asa gate dielectric bringstogether inaunique way 2 many fundamental disciplines. At the same time this problem is truly applied and practical. It looked unlikelythat the perfect new material would be foundfast; rather there would be a series of evolving candidate materialsand approaches.

This volume aims at bringing together the results of extensive research done during the last fifteen years on the interfacial photoelectronic properties of the inorganic layered semiconducting materials, mainly in relation to solar energy conversion. Significant contributions have been made both on the fundamental aspects of interface characteristics and on the suitability of the layered materials in photoelectrochemical (semiconductor/electrolyte junctions) and in solid state photovoltaic(Schottky and p-n junctions) cells. New insights into the physical and chemical characteristics of the contact surfaces have been gained and many new applications of these materials have been revealed. In particular, the basal plane surface of the layered materials shows low chemical reactivity and specific electronic behaviour with respect to isotropic solids. In electrochemical systems, the inert nature of these surfaces characterized by saturated chemical bonds has been recognized from studies on charge transfer reactions and catalysis. In addition, studies on the role of the d-band electronic transitions and the dynamics of the photogene rated charge carriers in the relative stability of the photoelectrodes of the transition metal dichalcogenides have deepened the understanding of the interfacial photoreactions. Transition metal layered compounds are also recognized as ideal model compounds for the studies Involving surfaces: photoreactions, adsorption phenomena and catalysis, scanning tunneling microscopy and spectroscopy and epitaxial growth of thin films. Recently, quantum size effects have been investigated in layered semiconductor colloids.

"Micromagnetics and Recording Materials" is a book trying to give a systematic theory of computational applied magnetism, based on Maxwell equations of fields and Landau-Lifshitz equations of magnetic moments. The focused magnetic materials are magnetic recording materials utilized in computer hard disk drives. Traditionally, Micromagnetics includes the areas of magnetization curve theory," domain theory" and read and write process analyses in recording systems . As Springer Briefs, this book includes the first two areas of micromagnetics. M-H loops of hard magnetic thin film media, soft magnetic layers and Tunneling MagnetoResistive spin valves are solved based on the microstructures of thin films. Static domain structures and dynamic switching processes are analyzed in the arbitrary-shaped magnetic devices such as write head pole tips and magnetic force microscope tips. The book is intended for researchers who are interested in applied magnetism and magnetic recording in all disciples of physical science.

Prof. Dan Weiworks at Tsinghua University, China."

Mesoscopic physics has made great strides in the last few years. It is an area of research that is attractive to many graduate students of theoretical condensed matter physics. The techniques that are needed to understand it go beyond the conventional perturbative approaches that still form the bulk of the graduate lectures that are given to students. Even when the non-perturbative techniques are presented, they often are presented within an abstract context. It is important to have lectures given by experts in the field, which present both theory and experiment in an illuminating and inspiring way, so that the impact of new methodology on novel physics is clear. It is an apt time to have such a volume since the field has reached a level of maturity. The pedagogical nature of the articles and the variety of topics makes it an important resource for newcomers to the field. The topics range from the newly emerging area of quantum computers and quantum information using Josephson junctions to the formal mathematical methods of conformal field theory which are applied to the understanding of Luttinger liquids.

Electrons which interact strongly can give rise to non-trivial ground states such as superconductivity, quantum Hall states and magnetism. Both their theory and application are discussed in a pedagogical way for quantum information in mesoscopic superconducting devices, skyrmions and magnetism in two dimensional electron gases, transport in quantum wires, metal-insulator transitions and spin electronics.

Nanocrystalline materials are three-dimensional ultrafine, polycrystalline microstructures. They give rise to interesting and useful chemical and physical-size effects. This book describes the development of a method of synthesizing chemical vapor for the production of nanocrystalline ceramic powders. The development of the microstructure during sintering is studied and the influence of the synthesis parameters on the structure and properties of the nanocrystalline ceramics from the atomic to the microstructural level is investigated. The emerging unified view, from powder synthesis and ceramic processing to structural characterization and determination of properties, provides a detailed understanding of the materials and enables better quality control of the end products.

This monograph on quantum wires and quantum devices is a companion vol ume to the author's Quantum Chaos and Mesoscopic Systems (Kluwer, Dordrecht, 1997). The goal of this work is to present to the reader the mathematical physics which has arisen in the study of these systems. The course which I have taken in this volume is to juxtapose the current work on the mathematical physics of quantum devices and the details behind the work so that the reader can gain an understanding of the physics, and where possible the open problems which re main in the development of a complete mathematical description of the devices. I have attempted to include sufficient background and references so that the reader can understand the limitations of the current methods and have direction to the original material for the research on the physics of these devices. As in the earlier volume, the monograph is a panoramic survey of the mathe matical physics of quantum wires and devices. Detailed proofs are kept to a min imum, with outlines of the principal steps and references to the primary sources as required. The survey is very broad to give a general development to a variety of problems in quantum devices, not a specialty volume."

Photonic crystals are a very hot topic in photonics. The basics, fabrication, application and new theoretical developments in the field of photonic crystals are presented in a comprehensive way, together with a survey of the advanced state-of-the-art report.

Whydowelookatsomethingsandthinktheyarebeautifulwhileotherthingsdo notappearestheticallypleasingtous?Thisisaquestionthathasalwaysinterested mankind. Oneanswerisgivenbythefollowingquotationfromanearlypresidentof theCollegeofNewJersey(nowPrincetonUniversity): "Beautyisfoundinimmaterialthingslikeproportionoruniformity...calledbyvariousnamesofregularity,order,uniformity,symmetry, 1 proportion,harmony,etc. "...JonathanEdwards Symmetrynotonlyprovidesthenaturalharmonythatmakessomethingappear beautifultous,butalsoisofgreatvaluetosciencebecauseitdictatesthephysical traitsofmanyobjects. Natureitselfseemstolovebeautysinceatomstendtoself? assemble into shapes with speci?c symmetry and crystals grow in geometric lattices. Inmanycases,ifweknowthesymmetryofsomethingwecanpredict someofitsimportantpropertieswithouthavingtoresorttoexperimentationor complicatedcalculations. One area where the concept of symmetry plays an important role is that of crystalline solids. Crystals, by their very nature, exhibit speci?c symmetries. Crystallinematerialshavemanyimportantapplicationsindevicesbasedontheir electronic,optical,thermal,magnetic,andmechanicalproperties. Solidstatep- sicistsandchemists,aswellasmaterialscientistsandengineers,havedeveloped rigorousquantumtheoreticalmodelstodescribethesepropertiesandsophisticated measurementtechniquestoverifythesemodels. Manytimes,however,inscreeningmaterialsforanewapplicationitisuseful to be able to quickly and easily determine if a speci?c material will have the appropriatepropertieswithoutmakingdetailedcalculationsorexperiments. This canbedonebyanalyzingthesymmetrypropertiesofthematerial. Themathema- calformalismthathasbeendevelopedtoaccomplishthisiscalledgrouptheory. Thesymmetrypropertiesofacrystalcanbedescribedbyagroupofmathematical 1 J. Edwards,WorksofJonathanEdwards(BannerofTruthTrust,Edinburgh,1979) v vi Preface operations. Thenusingsimplegrouptheoryprocedures,thephysicalpropertiesof thecrystalcanbedetermined. Duringthe45yearsIhavebeeninvolvedinteachingandresearchinvarious areasofsolidstatephysics,Ihavemadeextensiveuseoftheconceptsofgroup theory. YetIhavebeensurprisedathowlittleemphasisthistopicreceivesinany formaleducationalcurriculum. Generally,astudentstudyingsolidstatephysicsor chemistrywillbeexposedtocrystalstructuresearlyinthesemesterandthenhave nofurtherexposuretocrystalsymmetryuntilsomespecialtopicsuchasnonlinear opticsisdiscussed. Thisbookfocusesonthesymmetryofcrystalsandthedescr- tionofthissymmetrythroughtheuseofgrouptheory. Althoughspeci?cexamples are provided of using this formalism to determine both the microscopic and macroscopicpropertiesofmaterials,theemphasisisonthecomprehensive,per- sivenatureofsymmetryinallareasofsolidstatescience. Theintentofthebookistobeareferencesourceforthosedoingresearchor teachinginsolidstatescienceandengineering,oratextforaspecialtycoursein grouptheoryappliedtothepropertiesofcrystals. Tucson,AZ RichardC. Powell June2010 Contents 1 SymmetryinSolids...1 1. 1 Symmetry...1 1. 2 CrystalStructures...4 1. 3 SymmetryinReciprocalSpace...15 1. 4 Problems...24 References...24 2 GroupTheory...25 2. 1 BasicConceptsofGroupTheory...27 2. 2 CharacterTables...31 2. 3 GroupTheoryExamples...40 2. 3. 1 C PointGroup...40 3v 2. 3. 2 O PointGroup...45 h 2. 4 GroupTheoryinQuantumMechanics...47 2. 5 Problems...52 References...53 3 TensorPropertiesofCrystals...55 3. 1 First-RankMatterTensors...5 7 3. 2 Second-RankMatterTensors...62 3. 3 Third-RankMatterTensors...68 3. 4 Fourth-RankMatterTensors...73 3. 5 Problems...77 References...77 4 SymmetryPropertiesofPointDefectsinSolids...79 4. 1 EnergyLevelsofFreeIons...79 4. 2 CrystalFieldSymmetry...85 4. 3 EnergyLevelsofIonsinCrystals...87 vii viii Contents 4. 4 Example:d?Electrons...95 4. 5 Example:f-Electrons...100 4. 6 Problems...104 References...104 5 SymmetryandtheOpticalPropertiesofCrystals ...

Quantum and chaos, key concepts in contemporary science, are incompatible by nature. This volume presents an investigation into quantum transport in mesoscopic or nanoscale systems which are classically chaotic and shows the success and failure of quantal, semiclassical, and random matrix theories in dealing with questions emerging from the mesoscopic cosmos. These traditional theories are critically analysed, and this leads to a new direction. To reconcile quantum with chaos and to restore genuine temporal chaos in quantum systems, a time-discrete variant of quantum dynamics is proposed. Audience: This book will be of interest to graduate students and researchers in physics, chemistry and mathematics, whose work involves fundamental questions of quantum mechanics in chaotic systems.

This book presents several circuits that are required for the full integration of an optical transmitter in standard CMOS. The main emphasis is placed on high-speed receivers with a bitrate of up to 1 Gb/s. The possibility of including the photodiode in a receiver is investigated and the problems encountered are discussed.