Micro-TAS '98 is the third of a series of symposia initiated by MBSA (University of Twente) in 1994, on the subject of miniaturizing, and integrating within a monolithic structure, the chemical, biochemical and biological procedures commonly used for analysis and synthesis. The primary tool used to develop micro-total analysis systems (mu- TAS) has been micro-photolithographic patterning and micromachining. These powerful tools of Micro System Technology (MST or MEMS) have been applied in highly imaginative ways to develop microchip chemical arrays, fully integrated pump and fluid manifolds, and electrokinetically driven micro-channel systems to be used for genetic analysis, clinical diagnostics and environmental monitoring, and to integrate reactions as diverse as the polymerase chain reaction (PCR) and the large volume, partial oxidation of ammonia. This text illustrates the rapid expansion of the field, the extensive industrial involvement, the increasing number of participating researchers, the expanding range of concepts and applications that utilize MST and microfluidic devices, and new MST-compatible plastic micro-machining to meet the needs of the life science community. This volume contains the proceedings of the Third International Symposium on Micro-Total Analysis Systems, mu-TAS '98, held on October 13-16 in Banff, Alberta, Canada. State-of-the-art invited and contributed papers presented by the world's leading mu- TAS research groups provide a highly informative picture of the growth since 1994 and of the promising future of this exciting and rapidly growing field.

The synthesis of multicomponent/multilayered superconducting, conducting, semiconducting and insulating thin films has become the subject of an intensive, worldwide, interdisciplinary research effort. The development of deposition-characterization techniques and the science and technology related to the synthesis of these films are critical for the successful evolution of this interdisciplinary field of research and the implementation of the new materials in a whole new generation of advanced microdevices. This book contains the lectures and contributed papers on various scientific and technological aspects of multicomponent and multilayered thin films presented at a NATO/ASI. Compared to other recent books on thin films, the distinctive character of this book is the interdisciplinary treatment of the various fields of research related to the different thin film materials mentioned above. The wide range of topics discussed in this book include vacuum-deposition techniques, synthesis-processing, characterization, and devices of multicomponent/multilayered oxide high temperature superconducting, ferroelectric, electro-optic, optical, metallic, silicide, and compound semiconductor thin films. The book presents an unusual intedisciplinary exchange of ideas between researchers with cross-disciplinary backgrounds and it will be useful to established investigators as well as postdoctoral and graduate students.

Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.

-Shear-Induced Transitions and Instabilities in Surfactant Wormlike Micelles By S. Lerouge, J.-F. Berret -Laser-Interferometric Creep Rate Spectroscopy of Polymers By V. A. Bershtein, P. N. Yakushev -Polymer Nanocomposites for Electro-Optics: Perspectives on Processing Technologies, Material Characterization, and Future Application K. Matras-Postolek, D. Bogdal

Techniques for the preparation of condensed matter systems have advanced considerably in the last decade, principally due to the developments in microfabrication technologies. The widespread availability of millikelvin temperature facilities also led to the discovery of a large number of new quantum phenomena. Simultaneously, the quantum theory of small condensed matter systems has matured, allowing quantitative predictions. The effects discussed in Quantum Dynamics of Submicron Structures include typical quantum interference phenomena, such as the Aharonov-Bohm-like oscillations of the magnetoresistance of thin metallic cylinders and rings, transport through chaotic billiards, and such quantization effects as the integer and fractional quantum Hall effect and the quantization of the conductance of point contacts in integer multiples of the `conductance quantum'. Transport properties and tunnelling processes in various types of normal metal and superconductor tunnelling systems are treated. The statistical properties of the quantum states of electrons in spatially inhomogeneous systems, such as a random, inhomogeneous magnetic field, are investigated. Interacting systems, like the Luttinger liquid or electrons in a quantum dot, are also considered. Reviews are given of quantum blockade mechanisms for electrons that tunnel through small junctions, like the Coulomb blockade and spin blockade, the influence of dissipative coupling of charge carriers to an environment, and Andreev scattering. Coulomb interactions and quantization effects in transport through quantum dots and in double-well potentials, as well as quantum effects in the motion of vortices, as in the Aharonov-Casher effect, are discussed. The status of the theory of the metal-insulator and superconductor-insulator phase transitions in ordered and disordered granular systems are reviewed as examples in which such quantum effects are of great importance.

Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

The behavior of polymer solutions in simple shear flows has been the subject of considerable research in the past. On the other hand, reports on polymers in elongational flow have appeared comparatively recently in the literature. Elongational flow with an inherent low vorticity is known to be more effective in extending polymer chains than simple shear flow and thus is more interesting from the point of view of basic (molecular chain dynamics at high deformation) and applied polymer science (rheology, fiber extrusion, drag reduction, flow through porous media). Undoubtly, one landmark in the field of polymer dynamics in elongational flow was the notion of critical strain-rate for chain extension, initially put forward by A. Peterlin (1966) and later refined into the "coil-stretching" transition by P. G. de Gennes and H. Hinch (1974). In the two decades which followed, significant progress in the understanding of chain conformation in "strong" flow has been accomplished through a combination of advances in instrumentation, computation techniques and theoretical studies. As a result of the multidisciplinary nature of the field, information on polymer chains in "strong" flow is accessible only from reviews and research papers scattered in disparate scientific journals. An important objective of this book is to remedy that situation by providing the reader with up-to-date knowledge in a single volume. The editors therefore invited leading specialists to provide both fundamental and applied information on the multiple facets of chain deformation in elongational flow.

Technological advances in semiconductor growth has opened a broad horizon for semiconductor physics and applications during the past 20 years. High quality two-. dimensional systems are achieved with nearly atomic precision by direct epitaxial growth. Such structures led to novel applications like low noise high frequency modulation doped field effect transistors and quantum well lasers. Semiconductor heterostructures of lower dimensionality like quantum wires and quantum dots are not yet as mature, partly due to the lack in precision oflateral structuring technology. In recent years, however, there was an enormous progress in novel epitaxial growth methods. This opens a wide new area of basic and applied semiconductor physics with the hope of novel applications in near future making use of the advantageous properties of one- and zero-dimensional systems. Ideas for future device applications mainly stem from the altered density of states being discrete or atomic-like for quantum dots. Optical spectroscopy has played and is playing a crucial role in the advancement of this fascinating field of semiconductor physics. The NATO school organized at Bilkent University in Ankara and in Antalya brought together experts in this field and newcomers, especially young Ph. D. students and postdocs, to learn about recent developments and to discuss open questions in the area of optical spectroscopy of low dimensional semiconductors. The school turned out to be extremely fruitful and there was a great enthusiasm among the lecturers and students during the whole two weeks.

For the first time in book form, this comprehensive and systematic monograph presents the methods for the reversible synthesis of logic functions and circuits. This methodology offers designers the capability to solve major problems in system design now and in the future, such as the high rate of power consumption, and the emergence of quantum effects for highly dense ICs. The challenge addressed here is to design reliable systems that consume as little power as possible and in which the signals are processed and transmitted at very high speeds with very high signal integrity. Researchers in academia or industry and graduate students, who work in logic synthesis, computer design, computer-aided design tools, and low power VLSI circuit design, will find this book a valuable resource.

This seriesofbooks, which is publishedattherateofaboutoneper year, addresses fundamental problems in materialsscience.Thecontents coverabroadrangeoftopicsfromsmallclustersofatomstoengineering materials and involve chemistry, physics, materials science, and engineering,withlengthscalesrangingfromAngstromsuptomillimeters. Theemphasis is on basic scienceratherthan on applications. Each book focuses on a single areaofcurrent interest and brings together leading experts to give an up-to-date discussion oftheir work and the workof others. Each articlecontainsenough references thattheinterestedreader can access the relevant literature. Thanks are given to the Center for Fundamental Materials Research at Michigan State University for supportingthisseries. M.F.Thorpe,SeriesEditor E-mail:[email protected] EastLansing,Michigan,November2002 v PREFACE ThisvolumerecordsinvitedlecturesgivenattheNewThermoelectric(TE)Materials Workshopheld inTraverseCity,MichiganfromAugust17-21,2002.Thethemeofthe workshop was Chemistry, PhysicsandMaterials ScienceofThermoelectric Materials: Beyond Bismuth Telluride. The objective of this symposium was threefold. First, to examine and assess the ability of solid state chemistry to produce new generation materials for TE applications. Second, to rationalize and predict the charge and heat transportpropertiesofpotentialcandidatesandhypotheticalsystemsthroughsolidstate theoryandexperiment.Third,toidentifyandprioritizeresearchneededtoreachvarious levelsofrequirementsintermsofZTandtemperature.Theseobjectiveswereaddressed by a series of invited talks and discussions by leading experts from academia, governmentlaboratories,andindustry. Thereweretwenty-twoinvitedandeightposterpresentations inthe workshop.Out ofthese,sixteeninvitedpresentationsarerepresentedinthisvolume.Theycoverawide range of subjects, starting from synthesis (based on different strategies) and characterizationofnovel materials to acareful studyoftheir transport properties and electronicstructure.Topicsaddressingtheissueofmakingnew materialsare: synthetic search for new materials (di Salvo et aI.) and synthetic strategies based on phase homologies (Kanatzidis). The different classes of materials covered are: bismuth nanowires (Dresselhausetal.), unconventional high-temperaturethermoelectrics, boron carbides (Aselage et aI.) , layered cobalt oxides (Fujii et aI.), early transition metal antimonides(KleinkeetaI.),skutterudites(Uher),andclathratethermoelectrics(Nolas).

Micromachined Ultrasound-Based Proximity Sensors presents a packaged ultrasound microsystem for object detection and distance metering based on micromachined silicon transducer elements. It describes the characterization, optimization and the long-term stability of silicon membrane resonators as well as appropriate packaging for ultrasound microsystems. Micromachined Ultrasound-Based Proximity Sensors describes a cost-effective approach to the realization of a micro electro mechanical system (MEMS). The micromachined silicon transducer elements were fabricated using industrial IC technology combined with standard silicon micromachining techniques. Additionally, this approach allows the cointegration of the driving and read-out circuitry. To ensure the industrial applicability of the fabricated transducer elements intensive long-term stability and reliability tests were performed under various environmental conditions such as high temperature and humidity. Great effort was undertaken to investigate the packaging and housing of the ultrasound system, which mainly determine the success or failure of an industrial microsystem. A low-stress mounting of the transducer element minimizes thermomechanical stress influences. The developed housing not only protects the silicon chip but also improves the acoustic performance of the transducer elements. The developed ultrasound proximity sensor system can determine object distances up to 10 cm with an accuracy of better than 0.8 mm. Micromachined Ultrasound-Based Proximity Sensors will be of interest to MEMS researchers as well as those involved in solid-state sensor development.

Readers intent on mastering the basics should start by reading the first few overview chapters and then delve into the descriptions of specific current applications to see how they actually work. Important future applications are also outlined, including information storage, materials for computer memories, quantum computers, isotopic fibers, isotopic optoelectronics, and quantum electronics.

Commercially successful fully synthetic polymeric materials were pro duced in the early years of this century, the first example being Bakelite. This was made from phenol and formaldehyde by Leo Bakeland in 1909. Before the end of the 1920s, a large number of other synthetic polymers had been created, including polyvinyl chloride and urea-formaldehyde. Today, there are literally hundreds of synthetic polymers commercially available with ranges of properties making them suitable for applications in many industrial sectors, including the electrical and electronics industries. In many instances the driving force behind the development of new materials actually came from the electronics industry, and today's advanced electronics would be inconceivable without these materials. For many years polymers have been widely used in all sectors of the electronics industry. From the early days of the semiconductor industry to the current state of the art, polymers have provided the enabling technologies that have fuelled the inexorable and rapid development of advanced electronic and optoelectronic devices."

This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.

Fluorescence reporter is the key element of any sensing or imaging technology. Its optimal choice and implementation is very important for increasing the sensitivity, precision, multiplexing power, and also the spectral, temporal, and spatial reso- tion in different methods of research and practical analysis. Therefore, design of ?uorescence reporters with advanced properties is one of the most important problems. In this volume, top experts in this ?eld provide advanced knowledge on the design and properties of ?uorescent dyes. Organic dyes were the ?rst ?uorescent materials used for analytical purposes, and we observe that they retain their leading positions against strong competition of new materials - conjugated polymers, semiconductor nanocrystals, and metal chelating complexes. Recently, molecular and cellular biology got a valuable tool of organic ?uorophores synt- sized by cell machinery and incorporated into green ?uorescent protein and its analogs. Demands of various ?uorescence techniques operating in spectral, anisotropy, and time domains require focused design of ?uorescence reporters well adapted to these techniques. Near-IR spectral range becomes more and more attractive for various applications, and new dyes emitting in this range are strongly requested. Two-photonic ?uorescence has become one of the major tools in bioimaging, and ?uorescence reporters well adapted to this technique are in urgent need. These problems cannot be solved without the knowledge of fundamental principles of dye design and of physical phenomena behind their ?uorescence response.

In this book, the problem of electron and hole transport is approached from the point of view that a coherent and consistent physical theory can be constructed for transport phenomena. Along the road readers will visit some exciting citadels in theoretical physics as the authors guide them through the strong and weak aspects of the various theoretical constructions. Our goal is to make clear the mutual coherence and to put each theoretical model in an appropriate perspective. The mere fact that so many partial solutions have been proposed to describe transport, be it in condensed matter, fluids, or gases, illustrates that we are entering a world of physics with a rich variety of phenomena. Theoretical physics always seeks to provide a unifying picture. By presenting this tour of many very inventive attempts to build such a picture, it is hoped that the reader will be inspired and encouraged to help find the unifying principle behind the many faces of transport.

ThIS volume contaInS a selectIOn of InvIted revIew papers presented at a Royal SocIety DIscussIOn meetIng on ThIn FIlm DIamond held In London on 15 and 16 July 1992 The topIC of low pressure synthesIs has attracted world wIde Interest and become IncreasIngly active In recent years due to the pOSSIble use of dIamond films In commerCIal apphcatlOns Until recently commercIal dIamond synthesIs was almost entIrely by the hIgh pressure hIgh temperature technIque In whIch dIamond IS precIpItated as an eqUlhbnum phase from a carbon-contaInIng hqUld metal catalyst In thIS way crystals may be formed up to 10mm or so In sIze The metastable low pressure techmques cannot compete In cost but can be used to fabrIcate large area wafers or predetermIned shapes not pOSSIble by other means Most of the low pressure techmques stem from the work of Eversole whICh was first reported In 1962 He exposed a hot dIamond substrate alternately to a hydrocarbon gas, whIch deposIted a mIxture of dIamond and graphIte, and then to hydrogen, whICh preferen tIally etched away the graphite In later developments th se two stages have been combIned to form a contInUOUS process and dIffer only In the way the etchant IS generated In thIS volume an hIstorIcal overvIew of these low pressure growth techmques and a deSCrIptIOn of dIamond and crystal morphology IS gIVen by John Angus and hIS co-authors In theIr paper on the chemICal vapour depOSItIon of dIamond James Butler and RIchard WoodIn"

This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Kratschmer and Huffman's revolutionary discovery of a new solid phase of carbon, solid C60, in 1990 opened the way to an entire new class of materials with physical properties so diverse that their richness has not yet been fully exploited. Moreover, as a by-product of fullerene research, carbon nanotubes were later identified, from which novel nanostructures originated that are currently fascinating materials scientists worldwide. Rivers of words have been written on both fullerenes and nanotubes, in the form of journal articles, conference proceedings and books. The present book offers, in a concise and self-contained manner, the basics of the science of these materials as well as detailed information on those aspects that have so far been better explored. Structural, electronic and dynamical properties are described as obtained from various measurements and state-of-the-art calculations. Their interrelation emerges as well as their possible dependence on, for example, preparation conditions or methods of investigation. By presenting and comparing data from different sources, experiment and theory, this book helps the reader to rapidly master the basic knowledge, to grasp important issues and critically discuss them. Ultimately, it aims to inspire him or her to find novel ways to approach still open questions. As such, this book is addressed to new researchers in the field as well as experts.

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis.

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.

Semimagnetic semiconductors (SMSC) and diluted magnetic semiconductors (DMS) have in the past decade attracted considerable attention because they confer many new physical properties on both bulk materials and heterostructures. These new effects are due either to exchange interactions between magnetic moments on magnetic ions, or to exchange interactions between magnetic moments and the spin of the charge carrier. These effects vary with the transition metal (Mn, Fe, Co) or rare earth (Eu, Gd, etc) used and thus provide a range of different situations. The field is very large (zero gap, small gap, wide gap), and the magnetic properties also are very rich (paramagnetic spin glass, antiferromagnetism). These materials are very convenient for studying the magnetism (the magnetism is diluted) or the superlattices (SL) with a continuous change from type II SL to type III SL. This Course attempted to provide a complete overview of the topic. The participants of this summer school held in Erice came from ten countries and were from various backgrounds and included theoreticians, experimentalists, physicists, and chemists. Consequently, an attempt was made to make the Course as thorough as possible, but at the same time attention was devoted to basic principles. The lecturers, drawn from all the groups in the world involved in the field, were asked to be very didactic in their presentation. After two introductory lectures, Dr.

Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.

Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.