The successful launch of viable MEMs product hinges on MEMS reliability, the reliability and qualification for MEMs based products is not widely understood. Companies that have a deep understanding of MEMs reliability view the information as a competitive advantage and are reluctant to share it.

MEMs Reliability, focuses on the reliability and manufacturability of MEMS at a fundamental level by addressing process development and characterization, material property characterization, failure mechanisms and physics of failure (POF), design strategies for improving yield, design for reliability (DFR), packaging and testing.

This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F33615-70-C-1348. The work was administered under the direc tion of the Air Force Materials Laboratory, Air Force Systems Command, Wright Patterson Air Force Base, Ohio, with Mr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense authorized to provide information to the entire DOD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experimental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectric, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded."

Solid State Materials have been gaining importance in recent times especially in the context of devices which can provide necessary infrastructure and flexibility for various human endeavours. In this context, microwave materials have a unique place especially in various device applications as well as in communication networks. Various technological developments are taking place in fine-tuning these materials for specific applicatio"ns and in fixed band frequencies. Though the science and technology of these materials has reached an advanced stage, systematic attempts are still lacking in bringing all available information in a single source. The present. volume is a modest attempt in this direction, though it cannot be considered to be the one that satisfies completely desired components and information required. The editors have enlisted certain articles of interest in this area, especially those dealing with measurement techniques, chapters dealing with materials like Ferrites, YIGs, Radome and high Tc superconducting materials which are of current interest. The editors are fully aware that the coverages are not comprehensive either in scope or in depth. The purpose of this volume is only to acquaint oneself of certain aspects of a fast developing field. The editors will be grateful for any comments or suggestions in this endeavour. V. R. K. MURTHY S. SUNDARAM B. VISWANATHAN Contents Preface v 1. Materials and Processes in Microwave Integrated Circuits Fabrication 1 T. Rs. Reddy 2. Materials and Technology for Microwave Integrated Circuits 30 Bharathi Bhat and Shiban K. Koul 3.

The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.

High density digital magnetic and magneto-optical storage devices are widely used in audio, video, and data processing information technology, as well as in CAD/CAM computer systems. These widespread uses generate a continually increasing demand for both increased information storage densities and capacities, and for reduced access times. Hence, the materials engineering of high density storage media, with a high signal to noise ratio, and the associated design of sophisticated read and write heads, form the basis of major technological research. This research is especially complex because, ideally, the recorded information should be both erasable and, at the same time, secure and accessible over periods of many decades. As a result, research on these complex problems requires a multidisciplinary approach which utilizes the expertise in such widely differing fields as organic, inorganic, and solid state chemistry, metallurgy, solid state physics, electrical and mechanical engineering, and systems analysis. Often, further research specialization is necessary in each of these different disciplines. For instance, solid state physics and chemistry address the problems of crystallographic structure and phase diagram determination, magnetism, and optics, but more advanced research methods, such as high resolution electron microscopy and electronic band structure calculations, are necessary to understand the microstructure of particulate recording media or the electronic spectra of magneto-optical recording media.

This volume (>Ie) NEMATICS Mathematical and Physical aspects constitutes the proceedings of a workshop which was held at l'Universite de Paris Sud (Orsay) in May 1990. This meeting was an Advanced Research Workshop sponsored by NATO. We gratefully acknowledge the help and support of the NATO Science Committee. Additional support has been provided by the Ministere des affaires etrangeres (Paris) and by the Direction des Recherches et Etudes Techniques (Paris). Also logistic support has been provided by the Association des Numericiens d'Orsay. (*) These proceedings are published in the framework of the "Contrat DRET W 90/316/ AOOO." v Contents (*) FOREWORD v INTRODUCTION 1. M. CORON, 1. M. GHIDAGLIA, F. HELEIN xi AN ENERGY-DECREASING ALGORITHM FOR HARMONIC MAPS F. ALOUGES 1 A COHOMOLOGICAL CRITERION FOR DENSITY OF SMOOTH MAPS IN SOBOLEV SPACES BETWEEN TWO MANIFOLDS F. BETHUEL, 1. M. CORON, F. DEMENGEL, F. HELEIN 15 ON THE MATHEMATICAL MODELING OF TEXTURES IN POLYMERIC LIQUID CRYSTALS M. C. CAmERER 25 A RESULT ON THE GLOBAL EXISTENCE FOR HEAT FLOWS OF HARMONIC MAPS FROM D2 INTO S2 K. C. CHANG, W. Y. DING 37 BLOW-UP ANALYSIS FOR HEAT FLOW OF HARMONIC MAPS Y. CHEN 49 T AYLOR-COUETTE INSTABILITY IN NEMATIC LIQUID CRYSTALS P. E. ClADIS 65 ON A CLASS OF SOLUTIONS IN THE THEORY OF NEMATIC PHASES B. D. COLEMAN, 1. T. JENKINS 93 RHEOLOGY OF THERMOTROPIC NEMATIC LIQUID CRYSTALLINE POLYMERS M. M. DENN, 1. A.

The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips."

In the rapidly developing information society there is an ever-growing demand for information-supplying elements or sensors. The technology to fabricate such sensors has grown in the past few decades from a skilful activity to a mature area of scientific research and technological development. In this process, the use of silicon-based techniques has appeared to be of crucial importance, as it introduced standardized (mass) fabrication techniques, created the possibility of integrated electronics, allowed for new transduction principles, and enabled the realization of micromechanical structures for sensing or actuation. Such micromechanical structures are particularly well-suited to realize complex microsystems that improve the performance of individual sensors. Currently, a variety of sensor areas ranging from optical to magnetic and from micromechanical to (bio)chemical sensors has reached a high level of sophistication. In this MESA Monograph the proceedings of the Dutch Sensor Conference, an initiative of the Technology Foundation (STW), held at the University of Twente on March 2-3, 1998, are compiled. It comprises all the oral and poster contributions of the conference, and gives an excellent overview of the state of the art of Dutch sensor research and development. Apart from Dutch work, the contributions of two external invited experts from Switzerland are included.

MICROELECTRONIC INTERCONNECTIONS AND MICROASSEMBL Y WORKSHOP 18-21 May 1996, Prague, Czech Republic Conference Organizers: George Harman, NIST (USA) and Pavel Mach (Czech Republic) Summary of the Technical Program Thirty two presentations were given in eight technical sessions at the Workshop. A list of these sessions and their chairpersons is attached below. The Workshop was devoted to the technical aspects of advanced interconnections and microassembly, but also included papers on the education issues required to prepare students to work in these areas. In addition to new technical developments, several papers presented overviews predicting the future directions of these technologies. The basic issue is that electronic systems will continue to be miniaturized and at the same time performance must continue to improve. Various industry roadmaps were discussed as well as new smaller packaging and interconnection concepts. The newest chip packages are often based on the selection of an appropriate interconnection method. An example is the chip-scale package, which has horizontal (x-y) dimensions,;; 20% larger than the actual silicon chip itself. The chip is often flip-chip connected to a micro ball-grid-array, but direct chip attach was described also. Several papers described advances in the manufacture of such packages.

Magnetostatic Waves and their Applications is the first book devoted to magnetostatic waves. The book gives a thorough review of the field suitable for scientists, engineers and advanced students involved in magnetism and microwave electronics new to this area. It covers the field from essential physics to applications in microwave electronics, with details of the materials and materials processing methods included.

The Tenth International Symposium on Gaseous Dielectrics was held at the Astir Palace Vouliagmeni Hotel, Athens, Greece, March 29-April 2, 2004. The symposium. continued the interdisciplinary character and comprehensive approach of the preceding nine symposia. Gaseous Dielectrics X is a detailed record of the symposium proceedings. It covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics. It is hoped that Gaseous Dielectrics X will aid future research and development in, and encourage wider industrial use of, gaseous dielectrics. The Organizing Committee of the Tenth International Symposium on Gaseous Dielectrics consisted of L. G. Christophorou (Chainnan, Greece), J. K. Olthoff (co-Chainnan, USA), A. Bulinski (Canada), A. H. Cookson (USA), C. T. Dervos (Greece), J. de Urquijo (Mexico), J. Blackman (USA), O. Farish (UK), M. E. Frechette (Canada), I. Gillimberti (Italy), A. Garscadden (USA), A. Gleizes (France), H. Hama (Japan), T. Kawamura (Japan), E. Marode (France), I. W. McAllister (Denmark), H. Morrison (Canada), A. H. Mufti (Saudi Arabia), L. Niemeyer (Switzerland), W. Pfeiffer (Germany), Y. Qiu (China), I. Sauers (USA), M. Schmidt (Germany), H.-H. Schramm (Germany), L. van der Zel (USA), S. Yanabu (Japan), Y. Wang (USA), and J. W. Wetzer (The Netherlands). The Local Arrangements Committee consisted of J. N. Avaritsiotis, P. Vassiliou, C. T. Dervos of The National Technical University of Athens, C. A. Stassinopoulos of the Aristotelian University of Thessaloniki, and D.

The Workshop on Physics and Application of Non-crystalline Semiconductors in Optoelectronics was held from 15 to 17 October 1996 in Chisinau. republic of Moldova and was devoted to the problems of non-crystalline semiconducting materials. The reports covered two mjlin topics: theoretical basis of physics of non -crystalline materials and experimental results. In the framework of these major topics there were treated many subjects. concerning the physics of non-crystalline semiconductors and their specific application: -optical properties of non-crystalline semiconductors; -doping of glassy semiconductors and photoinduced effects in chalcogenide glasses and their application for practical purposes; -methods for investigation of the structure in non-crystalline semiconductors -new glassy materials for IR trasmittance and optoelectronics. Reports and communications were presented on various aspects of the theory. new physical principles. studies of the atomic structure. search and development of optoelectronics devices. Special attention was paid to the actual subject of photoinduced transformations and its applications. Experimental investigations covered a rather wide spectrum of materials and physical phenomena. As a novel item it is worth to mention the study of nonlinear optical effects in amorphous semiconducting films. The third order optical non linearities. fast photoinduced optical absorption and refraction. acusto-optic effects recently discovered in non-crystalline semiconductors could potentially be utilised for optical signal processing. The important problems of photoinduced structural transformations and related phenomena. which are very attractive and actual both from the scientific and practical points of view. received much attention in discussions at the conference."

This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Kratschmer and Huffman's revolutionary discovery of a new solid phase of carbon, solid C60, in 1990 opened the way to an entire new class of materials with physical properties so diverse that their richness has not yet been fully exploited. Moreover, as a by-product of fullerene research, carbon nanotubes were later identified, from which novel nanostructures originated that are currently fascinating materials scientists worldwide. Rivers of words have been written on both fullerenes and nanotubes, in the form of journal articles, conference proceedings and books. The present book offers, in a concise and self-contained manner, the basics of the science of these materials as well as detailed information on those aspects that have so far been better explored. Structural, electronic and dynamical properties are described as obtained from various measurements and state-of-the-art calculations. Their interrelation emerges as well as their possible dependence on, for example, preparation conditions or methods of investigation. By presenting and comparing data from different sources, experiment and theory, this book helps the reader to rapidly master the basic knowledge, to grasp important issues and critically discuss them. Ultimately, it aims to inspire him or her to find novel ways to approach still open questions. As such, this book is addressed to new researchers in the field as well as experts.

It is not good to have zeal without knowledge * . . . Book of Proverbs This volume constitutes the proceedings of the Third International Workshop on Materials Processing at High Gravity. It offers the latest results in a new field with immense potential for commercialization, making this book a vital resource for research and development professionals in industry, academia and government. We have titled the proceedings Centrifugal Materials Processing to emphasize that centrifugation causes more than an increase in acceleration. It also introduces the Coriolis force and a gradient of acceleration, both of which have been discovered to play important roles in materials processing. The workshop was held June 2-8, 1996 on the campus of Clarkson University in Potsdam, New York, under the sponsorship of Corning Corporation and the International Center for Gravity Materials Science and Applications. The meeting was very productive and exciting, with energetic discussions of the latest discoveries in centrifugal materials processing, continuing the atmosphere of the first workshop held in 1991 at Dubna (Russia) and the second workshop held in 1993 in Potsdam, New York. Results and research plans were presented for a wide variety of centrifugal materials processing, including directional solidification of semiconductors, crystallization of high Tc superconductors, growth of diamond thin films, welding, alloy casting, solution behavior and growth, protein crystal growth, polymerization, and flow behavior. Also described were several centrifuge facilities that have been constructed for research, with costs beginning at below $1000.

In this book, the problem of electron and hole transport is approached from the point of view that a coherent and consistent physical theory can be constructed for transport phenomena. Along the road readers will visit some exciting citadels in theoretical physics as the authors guide them through the strong and weak aspects of the various theoretical constructions. Our goal is to make clear the mutual coherence and to put each theoretical model in an appropriate perspective. The mere fact that so many partial solutions have been proposed to describe transport, be it in condensed matter, fluids, or gases, illustrates that we are entering a world of physics with a rich variety of phenomena. Theoretical physics always seeks to provide a unifying picture. By presenting this tour of many very inventive attempts to build such a picture, it is hoped that the reader will be inspired and encouraged to help find the unifying principle behind the many faces of transport.

Magnetic Components for Power Electronics concerns the important considerations necessary in the choice of the optimum magnetic component for power electronic applications. These include the topology of the converter circuit, the core material, shape, size and others such as cost and potential component suppliers. These are all important for the design engineer due to the emergence of new materials, changes in supplier management and the examples of several component choices. Suppliers using this volume will also understand the needs of designers.Highlights include: * Emphasis on recently introduced new ferrite materials, such as those operating at megahertz frequencies and under higher DC drive conditions; * Discussion of amorphous and nanocrystalline metal materials; * New technologies such as resonance converters, power factors correction (PFC) and soft switching; * Catalog information from over 40 magnetic component suppliers; * Examples of methods of component choice for ferrites, amorphous nanocrystalline materials; * Information on suppliers management changes such as those occurring at Siemens, Philips, Thomson and Allied-Signal; * Attention to the increasingly important concerns about EMI. This book should be especially helpful for power electronic circuit designers, technical executives, and material science engineers involved with power electronic components.

The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.

Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.

Summary of the recent progress in ceramics research. Several novel concepts for materials selection and microstructural design are presented, as are experimental results that substantiate the ideas.

This volume contains the papers presented at the First Mexico-U.S.A. Symposium on Materials Sciences and Engineering held in Ixtapa, Guerrero, Mexico, during Septem ber 24-27, 1991. The conference was conceived with the primary objective of increas ing the close ties between scientists and engineers in both Mexico and the U.S. with an interest in materials. The conference itself would have not taken place without the drive, determination and technical knowledge of John K. Tien of the University of Texas at Austin and of Francisco Mejia Lira of the Universidad de San Luis Potosi. This book is dedicated to their memory. The event brought together materials scientists and engineers with interests in a broad range of subjects in the processing, characterization and properties of advanced materials. Several papers were dedicated to structural materials ranging from ferrous alloys to intemetallics, ceramics and composites. The presentation covered properties, processing, and factors that control their use, such as fatigue and corrosion. Other materials and properties were also explored by U.S. and Mexican participants. Sev eral papers dealt with the characterization and properties of magnetics, optical and superconductor materials, nanostructured materials, as well as with computational and theoretical aspects likely to impact future materials research and development."

Silicon, as an electronic substrate, has sparked a technological revolution that has allowed the realization of very large scale integration (VLSI) of circuits on a chip. These 6 fingernail-sized chips currently carry more than 10 components, consume low power, cost a few dollars, and are capable of performing data processing, numerical computations, and signal conditioning tasks at gigabit-per-second rates. Silicon, as a mechanical substrate, promises to spark another technological revolution that will allow computer chips to come with the eyes, ears, and even hands needed for closed-loop control systems. The silicon VLSI process technology which has been perfected over three decades can now be extended towards the production of novel structures such as epitaxially grown optoelectronic GaAs devices, buried layers for three dimensional integration, micromechanical mechanisms, integrated photonic circuits, and artificial neural networks. This book begins by addressing the processing of electronic and optoelectronic devices produced by using lattice mismatched epitaxial GaAs films on Si. Two viable technologies are considered. In one, silicon is used as a passive substrate in order to take advantage of its favorable properties over bulk GaAs; in the other, GaAs and Si are combined on the same chip in order to develop IC configurations with improved performance and increased levels of integration. The relationships between device operation and substrate quality are discussed in light of potential electronic and optoelectronic applications.

Published in honour of the 70th birthday of Yoh-Han Pao, George S. Dively Dis tinguished Professor of Engineering at Case Western Reserve University, Cleveland, Ohio, this festschrift embraces a remarkably diverse set of topics. Drawing from the fields of pattern recognition, engineering, artificial intelligence and artificial neural systems, it is a fitting testament to the extraordinary breadth of his professional in terests both in foundational research into the new technology of Intelligent Systems and ill the application of that evolving technology to the solution of hard engineering problems. In common with many scientists who build their reputations in one field before devoting their considerable energies and talents to another one, by 1972, the year in which I met him for the first time, Yoh-Han had made significant contributions to laser technology, in particular to the development of the highly accurate and stable lasers required for holographic recording purposes. In conventional holography, the information stored in a hologram produces a virtual image of the object charac terised by it. However, Yoh-Han became fascinated by the possiblity of driving the process hackwards, of using the hologram as an associative memory device enabling previously stored information to be retrieved on the basis of partial cues. It was this burgeoning interest which shaped his career for more than twenty years. Just prior to 1972, my colleagues Professor Christopher Longuet-Higgins and Dr."

This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F33615-70-C-1348. The work was administered under the direc tion of the Air Force Materials Laboratory, Air Force Systems Command, Wright Patterson Air Force Base, Ohio, with Mr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is adesignated Information Analysis Center of the Department of Defense, authorized to provide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experimental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information gene rally regarded as being in the area of devices and/or circuitry is excluded. Grateful acknowledgement is made for the review and comments by Dr. Victor Rehn of the U. S. Naval Ordnance Test Station at China Lake, California, as weIl as for review by staff members of the National Bureau of Standards, National Standard Data Reference System. v CONTENTS Introduction . *. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Composite Data Table. . . . . . . . . . . . . . . . . . . . . . . . . 5 Diamond. . . . . . . . *. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Bibliography . . . . . . *. . . . . . . . . . . . . . . . . . . . . . . 11 Germanium . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Bibliography . . . . . . . . *. . . . . . . . . . . . . . . . . . . . . 28 Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.