Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

In the last ten years, the physics and technology of low dimensional structures has experienced a tremendous development. Quantum structures with vertical and lateral confinements are now routinely fabricated with feature sizes below 100 run. While quantization of the electron states in mesoscopic systems has been the subject of intense investigation, the effect of confinement on lattice vibrations and its influence on the electron-phonon interaction and energy dissipation in nanostructures received atten tion only recently. This NATO Advanced Research Workshop on Phonons in Sem iconductor Nanostructures was a forum for discussion on the latest developments in the physics of phonons and their impact on the electronic properties of low-dimensional structures. Our goal was to bring together specialists in lattice dynamics and nanos tructure physics to assess the increasing importance of phonon effects on the physical properties of one-(lD) and zero-dimensional (OD) structures. The Workshop addressed various issues related to phonon physics in III-V, II-VI and IV semiconductor nanostructures. The following topics were successively covered: Models for confined phonons in semiconductor nanostructures, latest experimental observations of confined phonons and electron-phonon interaction in two-dimensional systems, elementary excitations in nanostructures, phonons and optical processes in reduced dimensionality systems, phonon limited transport phenomena, hot electron effects in quasi - ID structures, carrier relaxation and phonon bottleneck in quantum dots."

The 2001 Dutch Sensor Conference held on 14 -15 May 2001, at the University of Twente in Enschede, The Netherlands, is the fourth in a series ofmeetings. The conference is initiated by the Dutch Technology Foundation (STW) in order to stimulate the industrial application ofsensor research. This MESA Monograph contains a collection oflatest research and development from all major Dutch centers ofsensor research and aspect ofsensor commercialization. Thus it provides an excellent overview ofthe state ofthe art ofDutch Sensor Technology in the new millennium. I should like to acknowledge the work ofthe program committee, the local organizing committee and, ofcourse, the contributors to this volume. All ofthem made the conference a success. Prof. Dr. Miko Elwenspoek Conference Chairman Program Committee: M. Elwenspoek (Chairman) (MESA+) A.van den Berg (MESA+) PJ. French (TV Delft) P.V. Lambeck (MESA+) H. Leeuwis (3T) J.c. Lotters (Bronkhorst) HAC. Tilmans (IMEC) Contents MEASUREMENT SYSTEM FOR BIOCHEMICAL ANALYSIS BASED 1 ON CAPILLARY ELECTROPHORESIS AND MICROSCALE CONDUCTIVITY DETECTION F. Laugere, A. Berthold, R.M Guijt, E. Baltussen, J. Bastemeijer, P.M Sarro, MJ. Vellekoop ELECTRO-OSMOTIC FLOW CONTROL IN MICROFLUIDICS 7 SYSTEMS R.E. Oosterbroek,MH. Goedbloed, A. Trautmann, N.J. van der Veen, S Schlautmann, 1.W Berenschot, A. van den Berg FLOW SENSING USING THE TEMPERATURE DISTRIBUTION 13 ALONG A HEATED MICROBEAM J.J. van Baar, RJ Wiegerink,GJM Krijnen, T.SJ. Lammerink, M.C.

The photorefractive effect is now firmly established as one of the highest-sensitivity nonlinear optical effects, making it an attractive choice for use in many optical holographic processing applications. As with all technologies based on advanced materials, the rate of progress in the development of photorefractive applications has been principally limited by the rate at which breakthroughs in materials science have supplied better photorefractive materials. The last ten years have seen an upsurge of interest in photorefractive applications because of several advances in the synthesis and growth of new and sensitive materials. This book is a collection of many of the most important recent developments in photorefractive effects and materials. The introductory chapter, which provides the necessary tools for understanding a wide variety of photorefractive phenomena, is followed by seven contributed chapters that offer views of the state-of-the-art in several different material systems. The second chapter represents the most detailed study to date on the growth and photorefractive performance of BaTi03, one of the most important photorefractive ferroelectrlcs. The third chapter describes the process of permanently fixing holographic gratings in ferroelectrics, important for volumetric data storage with ultra-high data densities. The fourth chapter describes the discovery and theory of photorefractive spatial solitons. Photorefractive polymers are an exciting new class of photo refractive materials, described in the fifth chapter. Polymers have many advantages, primarily related to fabrication, that could promise a breakthrough to the marketplace because of ease and low-cost of manufacturing.

Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon. Other scientists have developed new methods for growing these thin films while yet others have developed new photovoltaic (PV) device structures with im proved conversion efficiencies. In the last two years, several companies have constructed multi-megawatt manufacturing plants that can produce large-area, multijunction amorphous silicon PV modules. A growing number of people be lieve that thin-film photovoltaics will be integrated into buildings on a large scale in the next few decades and will be able to make a major contribution to the world's energy needs. In this book, Ruud E. I. Schropp and Miro Zeman provide an authoritative overview of the current status of thin film solar cells based on amorphous and microcrystalline silicon. They review the significant developments that have occurred during the evolution of the technology and also discuss the most im portant recent innovations in the deposition of the materials, the understanding of the physics, and the fabrication and modeling of the devices.

The discovery by J. G. Bednorz and K. A. Mtllier in 1986 that the superconducting state can exist in oxides at temperatures above 30 K stimulated research in the field of superconductivity and opened up a new field of research. Within a few years a large number of cuprate superconductors with transition temperatures well above the boiling point of liquid nitrogen have been found. The possibility of using liquid nitrogen as coolant re-stimulated interest in power applications of supercon ductivity. In this book an overview of the known high-Te superconductors and their physical properties is presented. Aspects related to conductor fabrication and high-current applications are emphasised. The material should be suitable for use in graduate level courses on superconductivity. Researchers in the field may profit from the large number of tables and references describing its status at the end of 1997. An introduction to high-To superconductivity must be based on the fundamental physical principles of normal-state electrical conductivity and the well-known characteristics of conventional superconductors. In Chapter 2 this background is provided. Crystal structures, anisotropic properties and general trends of the critical temperatures of the cuprate superconductors are described in Chapters 3 and 4. The processing of superconductor powders addressed in Chapter 5 affects considerably the current-carrying capacity of high-T. wires. In Chapter 6 several fabrication techniques for superconducting wires are described. In addition, the factors limiting the transport critical currents ofhigh-Te wires are discussed.

Foldable Flex and Thinned Silicon Multichip Packaging Technology presents newly emerging methods used to make stacked chip packages in the so-called 2-1/2 D technology (3-D in physical format, but interconnected only through the circuits on folded flex). It is also being used in single chip packages where the thinness of the chips and the flex substrate made packages significantly thinner than through any other means.

Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the debate of critical issues in this still developing field. In this matter, I have been assisted greatly by the excellent series of articles provided by the different authors, who are widely recognized as some of the leaders in this vital area of research.

For the first time in book form, this comprehensive and systematic monograph presents the methods for the reversible synthesis of logic functions and circuits. This methodology offers designers the capability to solve major problems in system design now and in the future, such as the high rate of power consumption, and the emergence of quantum effects for highly dense ICs. The challenge addressed here is to design reliable systems that consume as little power as possible and in which the signals are processed and transmitted at very high speeds with very high signal integrity. Researchers in academia or industry and graduate students, who work in logic synthesis, computer design, computer-aided design tools, and low power VLSI circuit design, will find this book a valuable resource.

This seriesofbooks, which is publishedattherateofaboutoneper year, addresses fundamental problems in materialsscience.Thecontents coverabroadrangeoftopicsfromsmallclustersofatomstoengineering materials and involve chemistry, physics, materials science, and engineering,withlengthscalesrangingfromAngstromsuptomillimeters. Theemphasis is on basic scienceratherthan on applications. Each book focuses on a single areaofcurrent interest and brings together leading experts to give an up-to-date discussion oftheir work and the workof others. Each articlecontainsenough references thattheinterestedreader can access the relevant literature. Thanks are given to the Center for Fundamental Materials Research at Michigan State University for supportingthisseries. M.F.Thorpe,SeriesEditor E-mail:[email protected] EastLansing,Michigan,November2002 v PREFACE ThisvolumerecordsinvitedlecturesgivenattheNewThermoelectric(TE)Materials Workshopheld inTraverseCity,MichiganfromAugust17-21,2002.Thethemeofthe workshop was Chemistry, PhysicsandMaterials ScienceofThermoelectric Materials: Beyond Bismuth Telluride. The objective of this symposium was threefold. First, to examine and assess the ability of solid state chemistry to produce new generation materials for TE applications. Second, to rationalize and predict the charge and heat transportpropertiesofpotentialcandidatesandhypotheticalsystemsthroughsolidstate theoryandexperiment.Third,toidentifyandprioritizeresearchneededtoreachvarious levelsofrequirementsintermsofZTandtemperature.Theseobjectiveswereaddressed by a series of invited talks and discussions by leading experts from academia, governmentlaboratories,andindustry. Thereweretwenty-twoinvitedandeightposterpresentations inthe workshop.Out ofthese,sixteeninvitedpresentationsarerepresentedinthisvolume.Theycoverawide range of subjects, starting from synthesis (based on different strategies) and characterizationofnovel materials to acareful studyoftheir transport properties and electronicstructure.Topicsaddressingtheissueofmakingnew materialsare: synthetic search for new materials (di Salvo et aI.) and synthetic strategies based on phase homologies (Kanatzidis). The different classes of materials covered are: bismuth nanowires (Dresselhausetal.), unconventional high-temperaturethermoelectrics, boron carbides (Aselage et aI.) , layered cobalt oxides (Fujii et aI.), early transition metal antimonides(KleinkeetaI.),skutterudites(Uher),andclathratethermoelectrics(Nolas).

The behavior of polymer solutions in simple shear flows has been the subject of considerable research in the past. On the other hand, reports on polymers in elongational flow have appeared comparatively recently in the literature. Elongational flow with an inherent low vorticity is known to be more effective in extending polymer chains than simple shear flow and thus is more interesting from the point of view of basic (molecular chain dynamics at high deformation) and applied polymer science (rheology, fiber extrusion, drag reduction, flow through porous media). Undoubtly, one landmark in the field of polymer dynamics in elongational flow was the notion of critical strain-rate for chain extension, initially put forward by A. Peterlin (1966) and later refined into the "coil-stretching" transition by P. G. de Gennes and H. Hinch (1974). In the two decades which followed, significant progress in the understanding of chain conformation in "strong" flow has been accomplished through a combination of advances in instrumentation, computation techniques and theoretical studies. As a result of the multidisciplinary nature of the field, information on polymer chains in "strong" flow is accessible only from reviews and research papers scattered in disparate scientific journals. An important objective of this book is to remedy that situation by providing the reader with up-to-date knowledge in a single volume. The editors therefore invited leading specialists to provide both fundamental and applied information on the multiple facets of chain deformation in elongational flow.

With the development in the 1960s of ultrahigh vacuum equipment and techniques and electron, X-ray, and ion beam techniques to determine the structure and composition of interfaces, activities in the field of surface science grew nearly exponentially. Today surface science impacts all major fields of study from physical to biological sciences, from physics to chemistry, and all engineering disciplines. The materials and phenomena characterized by surface science range from se- conductors, where the impact of surface science has been critical to progress, to metals and ceramics, where selected contributions have been important, to bio- terials, where contributions are just beginning to impact the field, to textiles, where the impact has been marginal. With such a range of fields and applications, questions about sample selection, preparation, treatment, and handling are difficult to cover completely in one review article or one chapter. Therefore, the editors of this book have assembled a range of experts with experience in the major fields impacted by surface characterization. It is the only book which treats the subject of sample handling, preparation, and treatment for surface characterization. It is full of tricks, cautions, and handy tips to make the laboratory scientist's life easier. With respect to organization of the book, the topics range from discussion of vacuum to discussion of biological, organic, elemental or compound samples, to samples prepared ex situ or in situ to the vacuum, to deposition ofthin films. Generic considerations of sample preparation are also given.

Nonlinear Optics in Signal Processing covers the applications of nonlinear optics to optical processing in a range of areas including switching, computing, and telecommunications.

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.

Electroactive polymers have been the object of increasing academic and industrial interest and in the past ten to fifteen years substantial progress has been achieved in the development and the characterization of this important new class of conducting materials. These materials are usually classified in two large groups, according to the mode of their electric transport. One group includes polymers having transport almost exclusively of the ionic type and they are often called 'polymer electrolytes' or, in a broader way, 'polymer ionics'. The other group includes polymeric materials where the transport mechanism is mainly electronic in nature and which are commonly termed 'conducting polymers'. Ionically conducting polymers or polymer ionics may be typically described as polar macromolecular solids in which one or more of a wide range of salts has been dissolved. The most classic example is the combina tion of poly(ethylene oxide), PEO, and lithium salts, LiX. These PEO-LiX polymer ionics were first described and proposed for applications just over ten years ago. The practical relevance of these new materials was im mediately recognized and in the course of a few years the field expanded tremendously with the involvement of many academic and industrial lab oratories. Following this diversified research activity, the ionic transport mechanism in polymer ionics was soon established and this has led to the development of new host polymers of various types, new salts and advanced polymer architectures which have enabled room temperature conductivity to be raised by several orders of magnitude."

ThIS volume contaInS a selectIOn of InvIted revIew papers presented at a Royal SocIety DIscussIOn meetIng on ThIn FIlm DIamond held In London on 15 and 16 July 1992 The topIC of low pressure synthesIs has attracted world wIde Interest and become IncreasIngly active In recent years due to the pOSSIble use of dIamond films In commerCIal apphcatlOns Until recently commercIal dIamond synthesIs was almost entIrely by the hIgh pressure hIgh temperature technIque In whIch dIamond IS precIpItated as an eqUlhbnum phase from a carbon-contaInIng hqUld metal catalyst In thIS way crystals may be formed up to 10mm or so In sIze The metastable low pressure techmques cannot compete In cost but can be used to fabrIcate large area wafers or predetermIned shapes not pOSSIble by other means Most of the low pressure techmques stem from the work of Eversole whICh was first reported In 1962 He exposed a hot dIamond substrate alternately to a hydrocarbon gas, whIch deposIted a mIxture of dIamond and graphIte, and then to hydrogen, whICh preferen tIally etched away the graphite In later developments th se two stages have been combIned to form a contInUOUS process and dIffer only In the way the etchant IS generated In thIS volume an hIstorIcal overvIew of these low pressure growth techmques and a deSCrIptIOn of dIamond and crystal morphology IS gIVen by John Angus and hIS co-authors In theIr paper on the chemICal vapour depOSItIon of dIamond James Butler and RIchard WoodIn"

Fluorescence reporter is the key element of any sensing or imaging technology. Its optimal choice and implementation is very important for increasing the sensitivity, precision, multiplexing power, and also the spectral, temporal, and spatial reso- tion in different methods of research and practical analysis. Therefore, design of ?uorescence reporters with advanced properties is one of the most important problems. In this volume, top experts in this ?eld provide advanced knowledge on the design and properties of ?uorescent dyes. Organic dyes were the ?rst ?uorescent materials used for analytical purposes, and we observe that they retain their leading positions against strong competition of new materials - conjugated polymers, semiconductor nanocrystals, and metal chelating complexes. Recently, molecular and cellular biology got a valuable tool of organic ?uorophores synt- sized by cell machinery and incorporated into green ?uorescent protein and its analogs. Demands of various ?uorescence techniques operating in spectral, anisotropy, and time domains require focused design of ?uorescence reporters well adapted to these techniques. Near-IR spectral range becomes more and more attractive for various applications, and new dyes emitting in this range are strongly requested. Two-photonic ?uorescence has become one of the major tools in bioimaging, and ?uorescence reporters well adapted to this technique are in urgent need. These problems cannot be solved without the knowledge of fundamental principles of dye design and of physical phenomena behind their ?uorescence response.

Advances in the semiconductor technology have enabled steady, exponential im- provement in the performance of integrated circuits. Miniaturization allows the integration of a larger number of transistors with enhanced switching speed. Novel transistor structures and passivation materials diminish circuit delay by minimizing parasitic electrical capacitance. These advances, however, pose several challenges for the thermal engineering of integrated circuits. The low thermal conductivities of passivation layers result in large temperature rises and temperature gradient magni- tudes, which degrade electrical characteristics of transistors and reduce lifetimes of interconnects. As dimensions of transistors and interconnects decrease, the result- ing changes in current density and thermal capacitance make these elements more susceptible to failure during brief electrical overstress. This work develops a set of high-resolution measurement techniques which de- termine temperature fields in transistors and interconnects, as well as the thermal properties of their constituent films. At the heart of these techniques is the thermore- flectance thermometry method, which is based on the temperature dependence of the reflectance of metals. Spatial resolution near 300 nm and temporal resolution near IOns are demonstrated by capturing transient temperature distributions in intercon- nects and silicon-on-insulator (SOl) high-voltage transistors. Analyses of transient temperature data obtained from interconnect structures yield thermal conductivities and volumetric heat capacities of thin films.

Good old Gutenberg could not have imagined that his revolutionary printing concept which so greatly contributed to dissemination of knowledge and thus today 's wealth, would have been a source of inspiration five hundred years later. Now, it seems intuitive that a simple way to produce a large number of replicates is using a mold to emboss pattern you need, but at the nanoscale nothing is simple: the devil is in the detail. And this book is about the "devil." In the following 17 chapters, the authors-all of them well recognized and active actors in this emerging field-describe the state-of-the-art, today 's technological bottlenecks and the prospects for micro-contact printing and nanoimprint lithography. Many results of this book originate from projects funded by the European Com mission through its "Nanotechnology Information Devices" (NID) initiative. NID was launched with the objective to develop nanoscale devices for the time when the red brick scenario of the ITRS roadmap would be reached. It became soon clear however, that there was no point to investigate only alternative devices to CMOS, but what was really needed was an integrated approach that took into account more facets of this difficult undertaking. Technologically speaking, this meant to have a coherent strategy to develop novel devices, nanofabrication tools and circuit & system architectures at the same time."

Semimagnetic semiconductors (SMSC) and diluted magnetic semiconductors (DMS) have in the past decade attracted considerable attention because they confer many new physical properties on both bulk materials and heterostructures. These new effects are due either to exchange interactions between magnetic moments on magnetic ions, or to exchange interactions between magnetic moments and the spin of the charge carrier. These effects vary with the transition metal (Mn, Fe, Co) or rare earth (Eu, Gd, etc) used and thus provide a range of different situations. The field is very large (zero gap, small gap, wide gap), and the magnetic properties also are very rich (paramagnetic spin glass, antiferromagnetism). These materials are very convenient for studying the magnetism (the magnetism is diluted) or the superlattices (SL) with a continuous change from type II SL to type III SL. This Course attempted to provide a complete overview of the topic. The participants of this summer school held in Erice came from ten countries and were from various backgrounds and included theoreticians, experimentalists, physicists, and chemists. Consequently, an attempt was made to make the Course as thorough as possible, but at the same time attention was devoted to basic principles. The lecturers, drawn from all the groups in the world involved in the field, were asked to be very didactic in their presentation. After two introductory lectures, Dr.

This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.

The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.

This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. This new edition includes important recent data and many new tables.

Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.