This book has been written as part of a new series of scientific text-books being published by Plenum Publishing Company Limited. The scope of the series is to review a chosen topic in each volume, and in addition, to present abstracts of the most important references cited in the text. Thus allowing the reader to supplement the information contained within this book without have to refer to many additional publications. This volume is devoted to the subject of Radiation Detectors, known as Photodetectors, and particular emphasis has been placed on devices operating in the infrared region of the electromagnetic spectrum. Although some detectors which are sensitive at ultraviolet and visible wavelengths, are also described. The existence of the infrared region of the spectrum has been known for almost two hundred years but the development of detectors specifically for these wavelengths was limited for a long time due to technology limitations and difficulties in understanding and explaining the phenomena involved. Significant advances were made during World War II, when the potential military applications of being able "to see in the dar ' were demonstrated, and this progress has been maintained during the last forty years when many major advances have been achieved, such that the use of photodetectors for both civil and military applications is now relatively common and can be inexpensive.

In the decades the of the formation of structures past subject spontaneous in far from has into a branch of - systems equilibrium major physics grown search with ties to It has become evident that strong neighboring disciplines. a diverse of can be understood within a common mat- phenomena range matical framework which has been called nonlinear of continuous dynamics This name the close to the field of nonlinear systems. emphasizes relationship of with few of freedom which has evolved into a dynamics systems degrees mature in the recent features mathematically subject past. Many dynamical of continuous be described reduction few can a to a systems actually through of freedom and of the latter of continue to degrees properties type systems of continuous the inspire study systems. The of this book is to demonstrate the numerous goal through examples that exist for the of nonlinear the opportunities study phenomena through tools of mathematical and use of common analyses dynamical interpretations. Instead of overview of the a providing comprehensive rapidly evolving field, the contributors to this book are to communicate to a wide scientific trying audience the of what have learnt about the formation of essence they spon- neous structures in continuous and about the dissipative systems competition between order and chaos that characterizes these It is that systems. hoped the book will be even to those scientists whose not helpful are disciplines the authors.

Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts.

In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.

Fine Particles Science and Technology deals with the preparation, characterization and technological applications of monodisperse particles in the micro to nano size range. A broad view of this frontier field is given, covering understanding the mechanisms by which uniform fine particles are formed and the search for new processes; the mechanism of the precipitation technique, requiring knowledge of the relationship between the complex solution chemistry and the products formed; the sequence of events leading to the formation of monodisperse colloids. The following topics are presented: microparticles, nanoparticles, applications in the preparation of materials, synthesis and properties, environmental applications, and many others.

The articles in this book have been selected from the lectures of a NATO Advanced Study Institute held at Bad Lauterberg (Germany) in August 1995. Internationally well-known researchers in the field of mesoscopic quantum physics provide insight into the fundamental physics underlying the mesoscopic transport phenomena in structured semiconductor inversion layers. In addition, some of the most recent achievements are reported in contributed papers. The aim of the volume is not to give an overview over the field. Instead, emphasis is on interaction and correlation phenomena that turn out to be of increasing importance for the understanding of the phenomena in the quantum Hall regime, and in the transport through quantum dots. The present status of the quantum Hall experiments and theory is reviewed. As a "key example" for non-Fermi liquid behavior the Luttinger liquid is introduced, including some of the most recent developments. It is not only of importance for the fractional quantum Hall effect, but also for the understanding of transport in quantum wires. Furthermore, the chaotic and the correlation aspects of the transport in quantum dot systems are described. The status of the experimental work in the area of persistent currents in semiconductor systems is outlined. The construction of one of the first single-electron transistors is reported. The theoretical approach to mesoscopic transport, presently a most active area, is treated, and some aspects of time-dependent transport phenomena are also discussed.

Solid State Materials have been gaining importance in recent times especially in the context of devices which can provide necessary infrastructure and flexibility for various human endeavours. In this context, microwave materials have a unique place especially in various device applications as well as in communication networks. Various technological developments are taking place in fine-tuning these materials for specific applicatio"ns and in fixed band frequencies. Though the science and technology of these materials has reached an advanced stage, systematic attempts are still lacking in bringing all available information in a single source. The present. volume is a modest attempt in this direction, though it cannot be considered to be the one that satisfies completely desired components and information required. The editors have enlisted certain articles of interest in this area, especially those dealing with measurement techniques, chapters dealing with materials like Ferrites, YIGs, Radome and high Tc superconducting materials which are of current interest. The editors are fully aware that the coverages are not comprehensive either in scope or in depth. The purpose of this volume is only to acquaint oneself of certain aspects of a fast developing field. The editors will be grateful for any comments or suggestions in this endeavour. V. R. K. MURTHY S. SUNDARAM B. VISWANATHAN Contents Preface v 1. Materials and Processes in Microwave Integrated Circuits Fabrication 1 T. Rs. Reddy 2. Materials and Technology for Microwave Integrated Circuits 30 Bharathi Bhat and Shiban K. Koul 3.

This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.

A Festschrift in honor of Professor Marvin L. Cohen This volume is a Festschrift in honor of Professor Marvin L. Cohen. The articles, contributed by leading researchers in condensed matter physics, high-light recent advances in the use of quantum theory to explain and predict properties of real materials. The invention of quantum mechanics in the 1920's provided detailed descriptions of the electronic structure of atoms. However, a similar understanding of solids has been achieved only in the past 30 years, owing to the complex electron-ion and electron electron interactions in these systems. Professor Cohen is a central figure in this achievement. His development of the pseudopotential and total energy methods provided an alternate route using computers for the exploration of solids and new materials even when they have not yet been synthesized. Professor Cohen's contributions to materials theory have been both fundamental and encompassing. The corpus of his work consists of over 500 papers and a textbook. His band structures for semiconductors are used worldwide by researchers in solid state physics and chemistry and by device engineers. Professor Cohen's own use of his theories has resulted in the determination of the electronic structure, optical properties, structural and vibrational properties, and superconducting properties of numerous condensed matter systems including semiconductors, metals, surfaces, interfaces, defects in solids, clusters, and novel materials such as the fullerides and nanotubes."

Carbides, nitrides and borides are families of related refractory materials. Traditionally they have been employed in applications associated with engineering ceramics where either high temperature strength or stability is of primary importance. In recent years there has been a growing awareness of the interesting electrical, thermal and optical properties exhibited by these materials, and the fact that many can be prepared as monolithic ceramics, single crystals and thin films. In practical terms carbides, nitrides and borides offer the prospect of a new generation of semiconductor materials, for example, which can function at very high temperatures in severe environmental conditions. However, as yet, we have only a limited understanding of the detailed physics and chemistry of the materials and how the preparation techniques influence the properties. Under the auspices of the NATO Science Committee an Advanced Research Workshop (ARW) was held on the Physics and Chemistry of Carbides, Nitrides and Borides (University of Manchester, 18-22 September, 1989) in order to assess progress to date and identify the most promising themes and materials for future research. An international group of 38 scientists considered developments in 5 main areas: The preparation of powders, monolithic ceramics, single crystals and thin films; Phase transformations, microstructure, defect structure and mass transport; Materials stability; Theoretical studies; Electrical, thermal and optical properties of bulk materials and thin films.

A presentation of the peculiarities of the physical properties of a comparatively new class of solids. GSs are of practical interest since they are very sensitive to impurities, and to the influence of light, magnetic and electric fields, and to pressure.

The emergence of synthetic ceramics as a prominent class of materials with a unique combination of properties has been an important part of the materials-science scene over the past 20 years. These 'high-technology' ceramics have varied applications in areas utilizing their exceptional mechanical, thermal, optical, magnetic or electronic properties. A notable development of the 1970s was that of 'Si-based' ceramics (Si3N4' SiC and 'Sialons') as high-temperature engineering solids. More recently the zirconia-based ceramics have evolved as a class of material with significant improvements in fracture-toughness. In the 1980s we are on the threshold of development of ceramic-matrix composites with the promise of over coming major limitations in engineering design with 'brittle' ceramics and the development of novel properties unattainable with monolithic micro structures. Throughout this period there have been significant but less well-publicized developments in the field of glass-ceramics and glasses. It is the purpose of this publication to review selected topics within this important area of materials science. A key element in understanding the relation between properties and microstructure is a knowledge of atomic arrangement in ceramic phases. Recent developments in NMR and X-ray absorption spectroscopies have had considerable impact on studies of atomic co-ordination in glasses and crystalline ceramic materials and are reviewed in Chapters 1 and 2. Glass-ceramics are derived from the parent glasses by controlled crystal lization and have properties dictated, in part, by the efficiency of crystal nucleation within the glass volume."

Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.

This is the first comprehensive resource of power device electrical characteristics in a cryogenic environment. Using theoretical and experimental knowledge from the literature, temperature dependence of fundamental silicon material parameters like intrinsic carrier concentration, carrier mobilities, lifetimes and bandgap narrowing was identified. The temperature dependent model of avalanche breakdown was developed using experimental data on numerous devices. A wide range of power devices, each with its own unique features, was chosen for theoretical and experimental analysis. Using these analyses, Schottky diodes, power MOSFETs, power BJTs, and power JFETs were optimized in the 300-77K temperature range. Cryogenic Operation of Silicon Power Devices presents the different characteristics of power devices operated below -55 C (220K). It provides data and physics based models for power devices operated at temperatures down to 77K for the first time within a single source. All commercially available devices have been included to provide comprehensive coverage.Also, a fundamental analysis of devices identifies the suitability of various devices to applications requiring cryogenic operations. A quantitative analysis of the relative strengths and weaknesses of these devices is also presented.

Engineering materials with desirable physical and technological properties requires understanding and predictive capability of materials behavior under varying external conditions, such as temperature and pressure. This immediately brings one face to face with the fundamental difficulty of establishing a connection between materials behavior at a microscopic level, where understanding is to be sought, and macroscopic behavior which needs to be predicted. Bridging the corresponding gap in length scales that separates the ends of this spectrum has been a goal intensely pursued by theoretical physicists, experimentalists, and metallurgists alike. Traditionally, the search for methods to bridge the length scale gap and to gain the needed predictive capability of materials properties has been conducted largely on a trial and error basis, guided by the skill of the metallurgist, large volumes of experimental data, and often ad hoc semi phenomenological models. This situation has persisted almost to this day, and it is only recently that significant changes have begun to take place. These changes have been brought about by a number of developments, some of long standing, others of more recent vintage.

Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.

This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F33615-70-C-1348. The work was administered under the direc tion of the Air Force Materials Laboratory, Air Force Systems Command, Wright Patterson Air Force Base, Ohio, with Mr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is adesignated Information Analysis Center of the Department of Defense, authorized to provide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experimental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information gene rally regarded as being in the area of devices and/or circuitry is excluded. Grateful acknowledgement is made for the review and comments by Dr. Victor Rehn of the U. S. Naval Ordnance Test Station at China Lake, California, as weIl as for review by staff members of the National Bureau of Standards, National Standard Data Reference System. v CONTENTS Introduction . *. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Composite Data Table. . . . . . . . . . . . . . . . . . . . . . . . . 5 Diamond. . . . . . . . *. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Bibliography . . . . . . *. . . . . . . . . . . . . . . . . . . . . . . 11 Germanium . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Bibliography . . . . . . . . *. . . . . . . . . . . . . . . . . . . . . 28 Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

This book provides a detailed study of the Atomic Layer Epitaxy technique (ALE), its development, current and potential applications. The rapid development of coating technologies over the last 25 years has been instrumental in generating interest and expertise in thin films of materials, and indeed the market for thin film coatings is currently GBP3 billion with projected annual growth of 20 to 30% [1]. ALE is typical of thin-film processes in that problems in the processing or preparation of good quality epitaxial films have been overcome, resulting in better performance, novel applications of previously unsuitable materials, and the development of new devices. Many materials exhibit interesting and novel properties when prepared as thin films and doped. Vapour-deposited coatings and films are used extensively in the semiconductor and related industries for making single devices, integrated circuits, microwave hybrid integrated circuits, compact discs, solar reflective glazing, fibre optics, photo voltaic cells, sensors, displays, and many other products in general, everyday use. The ALE technique was developed by a research team led by Tuomo Suntola, working for Instrumentarium Oy in Finland. The key members of this team were lorma Antson, Arto Pakkala and Sven Lindfors. In 1977, the research team moved from Instrumentarium to Lohja Corporation, where they continued the development of ALE and were granted a patent in the same year. By 1980, the technique was sufficiently advanced that they were producing flat-screen electroluminescent displays based on a manganese-doped zinc sulphide layer.

This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

In this book, we have attempted to produce a reference on high resolution focused ion beams (FIBs) that will be useful for both the user and the designer of FIB instrumentation. We have included a mix of theory and applications that seemed most useful to us. The field of FIBs has advanced rapidly since the application of the first field emission ion sources in the early 1970s. The development of the liquid metal ion source (LMIS) in the late 1960s and early 1970s and its application for FIBs in the late 1970s have resulted in a powerful tool for research and for industry. There have been hundreds of papers written on many aspects of LMIS and FIBs, and a useful and informative book on these subjects was published in 1991 by Phil Prewett and Grame Mair. Because there have been so many new applications and uses found for FIBs in the last ten years we felt that it was time for another book on the subject.

The idea for this book arose out of the realization that, although excellent surveys and a phosphor handbook are available, there is no single source covering the area of phosphate based phosphors especially for lamp industry. Moreover, as this field gets only limited attention in most general books on luminescence, there is a clear need for a book in which attention is specifically directed toward this rapidly growing field of solid state lighting and its many applications. This book is aimed at providing a sound introduction to the synthesis and optical characterization of phosphate phosphor for undergraduate and graduate students as well as teachers and researchers. The book provides guidance through the multidisciplinary field of solid state lighting specially phosphate phosphors for beginners, scientists and engineers from universities, research organizations, and especially industry. In order to make it useful for a wide audience, both fundamentals and applications are discussed, together.

This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.

In this book, the problem of electron and hole transport is approached from the point of view that a coherent and consistent physical theory can be constructed for transport phenomena. Along the road readers will visit some exciting citadels in theoretical physics as the authors guide them through the strong and weak aspects of the various theoretical constructions. Our goal is to make clear the mutual coherence and to put each theoretical model in an appropriate perspective. The mere fact that so many partial solutions have been proposed to describe transport, be it in condensed matter, fluids, or gases, illustrates that we are entering a world of physics with a rich variety of phenomena. Theoretical physics always seeks to provide a unifying picture. By presenting this tour of many very inventive attempts to build such a picture, it is hoped that the reader will be inspired and encouraged to help find the unifying principle behind the many faces of transport.

This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

A beam of ions in the fonn of "canal rays" was first observed in 1886 by E. Goldstein. The first ion source was invented by J. J. Thomson in 1910. This ion source became the basis for the first widespread application of ion sources in mass spectrographs and mass spectrometers. The second important application of ion sources is ion accelerators, which since the beginning of the 1930s have been employed in research on nuclear reactions and are now used in industry and medicine. A third application of ion sources is in systems for isotope separation and re search on the interaction of atomic particles with solids (1940s). The result of this research and development is the use of ion sources in semiconductor doping, decontamination of surfaces, and micromachining of surfaces (1960s and' 1970s), which is a fourth area of applications for ion sources. The heating of plasmas in magnetic confinement devices to thennonuclear temperatures (100-1000 MK) with the aid of megawatt beams of hydrogen and deuterium ions and atoms has become a fifth promising area of application for ion sources which can produce ion beams with steady-state currents of up to 100 A. Finally, experimental and industrial research are under way on the alloying of metals and the fabrication of coatings which greatly improve the physical and chemical properties of metals. These coatings can increase the hardness, high temperature corrosion resistance, and wear resistance of metals, and can enhance or reduce friction, etc."