Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.

Optical information processing of the future is associated with a new generation of compact nanoscale optical devices operating entirely with light. Moreover, adaptive features such as self-guiding, reconfiguration and switching become more and more important. Nonlinear devices offer an enormous potential for these applications. Consequently, innovative concepts for all-optical communication and information technologies based on nonlinear effects in photonic-crystal physics and nanoscale devices as metamaterials are of high interest. This book focuses on nonlinear optical phenomena in periodic media, such as photonic crystals, optically-induced, adaptive lattices, atomic lattices or metamaterials. The main purpose is to describe and overview new physical phenomena that result from the interplay between nonlinearities and structural periodicities and is a guide to actual and future developments for the expert reader in optical information processing, as well as in the physics of cold atoms in optical lattices.

This monograph of Electro-Optical E?ects to Visualize Field- and Current- Distributions in Semiconductors consists of ?ve parts, four of which are based ontheresearchofcadmiumsul?de, wherealargenumberofcontributionswere made between 1958 and the late 1960s to directly observe ?eld and current distributionsandinterprettheirresults.Thevisualizationof?elddistributions was accomplished by using the Franz Keldysh e?ect, and the visualization of currentinhomogeneitiesusestheshiftoftheopticalabsorptionedgebyJoule's heating. The ?fth part deals with a review of the explosively developing ?eld of N- and S-shaped current voltage characteristics causing inhomogeneities and instabilities in ?eld and current distributions. This part of the book was composed by Eckehard Sch] oll of the Technical University in Berlin. A major emphasis is given to the ?rst part of the book in which s- tionary high-?eld domains are described. These domains can be used as an essential tool to determine unambiguously certain semiconductor properties, such as the electron density and its mobility as the function of the actual electric ?eld. It is also helpful to determine changes of the work function and electron a?nities between di?erent materials, such as for electrodes and h- erojunctions. Finally, it gives direct information about certain doping and their spacial pro?le."

Ion beams have been used for decades for characterizing and analyzing materials. Now energetic ion beams are providing ways to modify the materials in unprecedented ways. This book highlights the emergence of high-energy swift heavy ions as a tool for tailoring the properties of materials with nanoscale structures. Swift heavy ions interact with materials by exciting/ionizing electrons without directly moving the atoms. This opens a new horizon towards the 'so-called' soft engineering. The book discusses the ion beam technology emerging from the non-equilibrium conditions and emphasizes the power of controlled irradiation to tailor the properties of various types of materials for specific needs.

Lanthanides have fascinated scientists for more than two centuries now, and since efficient separation techniques were established roughly 50 years ago, they have increasingly found their way into industrial exploitation and our everyday lives. Numerous applications are based on their unique luminescent properties, which are highlighted in this volume. It presents established knowledge about the photophysical basics, relevant lanthanide probes or materials, and describes instrumentation-related aspects including chemical and physical sensors. The uses of lanthanides in bioanalysis and medicine are outlined, such as assays for in vitro diagnostics and research. All chapters were compiled by renowned scientists with a broad audience in mind, providing both beginners in the field and advanced researchers with comprehensive information on on the given subject.

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The role of quantum coherence in promoting the e ciency of the initial stages of photosynthesis is an open and intriguing question. Lee, Cheng, and Fleming, Science 316, 1462 (2007) The understanding and design of functional biomaterials is one of today's grand challenge areas that has sparked an intense exchange between biology, materials sciences, electronics, and various other disciplines. Many new - velopments are underway in organic photovoltaics, molecular electronics, and biomimetic research involving, e. g. , arti cal light-harvesting systems inspired by photosynthesis, along with a host of other concepts and device applications. In fact, materials scientists may well be advised to take advantage of Nature's 3. 8 billion year head-start in designing new materials for light-harvesting and electro-optical applications. Since many of these developments reach into the molecular domain, the - derstanding of nano-structured functional materials equally necessitates f- damental aspects of molecular physics, chemistry, and biology. The elementary energy and charge transfer processes bear much similarity to the molecular phenomena that have been revealed in unprecedented detail by ultrafast op- cal spectroscopies. Indeed, these spectroscopies, which were initially developed and applied for the study of small molecular species, have already evolved into an invaluable tool to monitor ultrafast dynamics in complex biological and materials systems. The molecular-level phenomena in question are often of intrinsically quantum mechanical character, and involve tunneling, non-Born- Oppenheimer e ects, and quantum-mechanical phase coherence.

Optoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures.

Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications.

With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.

Porous Semiconductors: Optical Properties and Applications provides an examination of porous semiconductor materials. Beginning with a description of the basic electrochemistry of porous semiconductors and the different kinds of porous semiconductor materials that can be fabricated, the book moves on to describe the fabrication processes used in the production of porous semiconductor optical components. Concluding the text, a number of optical components based on porous semiconductor materials are discussed in depth.

Porous Semiconductors: Optical Properties and Applications provides a thorough grounding in the design, fabrication and theory behind the optical applications of porous semiconductor materials for graduate and undergraduate students interested in optics, photonics, MEMS, and material science. The book is also a valuable reference for scientists, researchers, and engineers in the field of optics and materials science.

This survey is concerned with the use of silicon nitride in the semi conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi mental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded. v CONTENTS Foreword. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Diffusion Mask Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . '" 11 Glass-to-Metal Seals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Passivation Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Memory Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Radiation Hardening Applications . . . . . . . . . . . . . . . . . . . . . . . ."

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors," held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

Flat-Panel Displays and CRTs, a review of electronic information display devices, is the first sys tematic and comprehensive coverage of the subject. It is intended to distill our wealth of knowledge of flat-panel displays and CRTs from their beginnings to the present state of the art. Historical perspective, theory of operation, and specific applications are all thoroughly covered. The field of display engineering is a multidisciplined technical pursuit with the result that its individual disciplines suffer from a lack of communications and limited perspective. Many previ ously developed standards for, and general understanding of, one technology are often inappro priate for another. Care has been taken here to document the old, incorporate the new, and emphasize commonalities. Criteria for performance have been standardized to enable an expert in one display technology, such as liquid crystals, to compare his device performance with that offered by another technology, such as electroluminescence. This book has been written with a second purpose in mind, to wit, to be the vehicle by means of which a new scientist or engineer can be introduced into the display society. It is organized to be tutorial for use in instructional situations. The first chapters begin with first principles and defini tions; the middle chapters set out requirements and criteria; and the last chapters give a complete description of each major technology."

Superlattices and Other Heterostructures deals with optical properties of superlattices and quantum-well structures with emphasis on phenomena governed by crystal symmetries. After a brief introduction to group theory and symmetries, methods to calculate spectra of electrons, excitions and phonons in heterostructures are discussed. Further chapters cover absorption and reflection of light under interband transitions, cyclotron and electron spin-resoncance, light scattering by free and bound carriers and by optical and acoustic phonons, polarized photoluminescence, optical spin orientation of electrons and excitions, and nonlinear optical and photogalvanic effects.

v. Formation of negative ions by processes other than attachment in the gaseous phase at low X/po 17. Introduction. As early as 1912, J. J. THOMSON [32J in his first mass spectro graph observed negative ions of 0-, Cl-, H- and what he believed to be N-. He at first ascribed these to possible dissociation of polar gaseous compounds by electron impact but control studies using ionization at low energies in glow discharges indicated that this was not the origin. O. W. RICHARDSON [33J in his book on emission of electricity from hot bodies reported negative ions to come from hot salts. From there on many experimental studies over the years indicated that negative ions could be formed by various processes. By the middle nineteen hundred and thirties the data fairly clearly identified several processes as being active and MASSEY and SMITH [34J developed the theory underlying some of them. More data are summarized in MASSEY'S excellent little monograph on Negative Ions and in )L\SSEY and BURHOP'S recent book [35]. Since that period, stimulated by various investigations and certain industrial problems, very careful studies of the appearance of such ions by mass spectrograph have been carried out in the laboratory of K. G. EMELEUS in Belfast by SLOANE and his co-workers [3J that haw clarified the questions and indicated what ions have been observed and something of the processes at work.

This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on 'Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.' This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.' The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The third section covers the crucial issue of interfaces while the final section deals with devices and device physics."

In this monograph, the authors offer a comprehensive examination of the latest research on Laser Chemical Vapor Deposition (LCVD). Chapters explore the physics of LCVD as well as the principles of a wide range of related phenomena-including laser-matter interactions, heat transfer, fluid flow, chemical kinetics, and adsorption. With this reference, researchers will discover how to apply these principles to developing theories about various types of LCVD processes; gain greater insight into the basic mechanisms of LCVD; and obtain the ability to design and control an LCVD system.

The increasing application of integrated circuits in situations where high reliability is needed places a requirement on the manufacturer to use methods of testing to eliminate devices that may fail on service. One possible approach that is described in this book is to make precise electrical measurements that may reveal those devices more likely to fail. The measurements assessed are of analog circuit parameters which, based on a knowledge of failure mechanisms, may indicate a future failure. . To incorporate these tests into the functional listing of very large scale integrated circuits consideration has to be given to the sensitivity of the tests where small numbers of devices may be defective in a complex circuit. In addition the tests ideally should require minimal extra test time. A range of tests has been evaluated and compared with simulation used to assess the sensitivity of the measurements. Other work in the field is fully referenced at the end of each chapter. The team at Lancaster responsible for this book wish to thank the Alvey directorate and SERe for the necessary support and encouragement to publish our results. We would also like to thank John Henderson, recently retired from the British Telecom Research Laboratories, for his cheerful and enthusiastic encouragement. Trevor Ingham, now in New Zealand, is thanked for his early work on the project.

There is no paucity of books on high pressure. Beginning with P. W. Bridgman's The Physics of High Pressure, books of general interest include the two-volume Physics and Chemistry of High Pressure, edited by R. S. Bradley, and the series, Advances in High Pressure Research, as well as the report on the Lake George Conference in 1960. Solid state physics is well represented by Solids Under Pressure, edited by Paul and Warschauer, by Physics of Solids at High Pressure, edited by Tomizuka and Emrick, and by Properties Physiques des Solides sous Pression, edited by Bloch, as well as by chapters in Volumes 6, 13, 17, and 19 of Solid State Physics, edited by Seitz, Turnbull, and Ehrenreich. Chemistry in gases and liquids is covered in Weale's Chemical Reactions at High Pressure, and Hamann's Physico-chemical Effects of Pressure. In addition to the coverage of techniques and calibrations in the above volumes, Modern Very High Pressure Techniques, edited by Wentorf, High Pressure Methods in Solid State Research, by C. C. Bradley, The Accurate Characterization of the High Pressure Environment, edited by E. C. Lloyd, and a chapter in Volume 11 of Solid State Physics are devoted entirely to this facet of high pressure research. It is not our plan either to supersede or extend these approaches. It is our purpose here to discuss the effect of high pressure on the electronic properties of solids.

This publication presents the proceedings of the NATO Advanced Research Workshop (ARW) on Computer Modelling of Electronic and Atomic Processes in Solids. This ARW was held at Szklarska Poreba, Wroclaw, Poland from May 20 -23, 1996, and brought together scientists from Canada, England, Germany, Israel, Latvia, Poland, Russia, Switzerland, United States, Ukraine and Uzbekistan. The NATO Advanced Research Workshops program is designed to increase collaboration and exchange of knowledge between the Eastern and Western scientific communities. This particular NATO ARW has already succeeded in that effort, and has spawned collaboration agreements and programs. One joint project in space materials has led to the launch of an experiment to the Russian MIR space station. This NATO ARW was also fortunate to be held concurrently with a workshop of the Wroclaw Technical University, in the same location, which focused on glass materials, thus providing for a larger scientific audience for a number of presentations of both groups. The primary emphasis of this ARW was on computer models, ranging from fundamental atomic, molecular and electronic structures and processes, through to macroscopic descriptions of materials in terms of their structure and properties. Various elements discussed in these proceedings include environmental effects, predictions of properties, correlations with experiments and material performance parameters. Applications to space and electronics were emphasized.

Avarietyof?uorescentandluminescentmaterialsintheformofmolecules,their complexes,andnanoparticlesareavailableforimplementationasreportingunits intosensingtechnologies. Increasingdemandsfromtheseapplicationareasrequire developmentofnew?uorescencereportersbasedonassociationandaggregationof ?uorescencedyesandontheirincorporationintodifferentnanostructures. Inter- tionsbetweenthesedyesandtheirincorporatingmatricesleadtonewspectroscopic effectsthatcanbeactivelyusedforoptimizingthesensordesign. Oneofthese effects is a spectacular formation of J-aggregates with distinct and very sharp excitationandemissionbands. Byincorporationintonanoparticles,organicdyes offer dramatically increased brightness together with improvement of chemical stabilityandphotostability. Moreover,certaindyescanformnanoparticlesth- selvessothattheirspectroscopicpropertiesareimproved. Semiconductorquantum dotsaretheothertypeofnanoparticles thatpossessuniqueandveryattractive photophysicalandspectroscopicproperties. Manyinterestingandnotfullyund- stoodphenomenaareobservedinclusterscomposedofonlyseveralatomsofnoble metals. Inconjugatedpolymers,strongelectronicconjugationbetweenelementary chromophoricunitsresultsindramaticeffectsinquenchingandinconformati- dependentspectroscopicbehavior. Possessingsuchpowerfulanddiversearsenaloftools,wehavetoexplorethem innovelsensingandimagingtechnologiesthatcombineincreasedbrightnessand sensitivityinanalytedetectionwithsimplicityandlowcostofproduction. The present book overviews the pathways for achieving this goal. In line with the discussion on monomeric ?uorescence reporters in the accompanying book (Vol. 8ofthisseries),aninsightfulanalysisofphotophysicalmechanismsbehind the ?uorescence response of composed and nanostructured materials is made. Based on the progress in understanding these mechanisms, their realization in differentchemicalstructuresisoverviewed. vii viii Preface Demonstratingtheprogressinaninterdisciplinary?eldofresearchanddev- opment,thisbookisprimarilyaddressedtospecialistswithdifferentbackground- physicists, organic and analytical chemists, and photochemists - to those who developandapplynew?uorescencereporters. Itwillalsobeusefultospecialists inbioanalysisandbiomedicaldiagnostics. Kyiv,Ukraine AlexanderP. Demchenko June2010 Contents PartI GeneralAspects NanocrystalsandNanoparticlesVersusMolecularFluorescent LabelsasReportersforBioanalysisandtheLifeSciences: ACriticalComparison ...3 UteResch-Genger,MarkusGrabolle,RolandNitschke, andThomasNann OptimizationoftheCouplingofTargetRecognition andSignalGeneration ...41 AnaB. Descalzo,ShengchaoZhu,TobiasFischer,andKnutRurack CollectiveEffectsIn?uencingFluorescenceEmission ...107 AlexanderP. Demchenko PartII EncapsulatedDyesandSupramolecularConstructions FluorescentJ-AggregatesandTheirBiologicalApplications ...135 MykhayloYu. LosytskyyandValeriyM. Yashchuk Conjugates,Complexes,andInterlockedSystems BasedonSquarainesandCyanines ...159 LeonidD. Patsenker,AnatoliyL. Tatarets,OleksiiP. Klochko, andEwaldA. Terpetschnig PartIII Dye-DopedNanoparticlesandDendrimers Dye-DopedPolymericParticlesforSensingandImaging ...193 SergeyM. Borisov,TorstenMayr,Gu..nterMistlberger,andIngoKlimant ix x Contents Silica-BasedNanoparticles:DesignandProperties ...229 SongLiang,CarrieL. John,ShupingXu,JiaoChen,YuhuiJin, QuanYuan,WeihongTan,andJuliaX. Zhao LuminescentDendrimersasLigandsandSensors ofMetalIons ...2 53 GiacomoBergamini,EnricoMarchi,andPaolaCeroni ProspectsforOrganicDyeNanoparticles ...285 HiroshiYao PartIV LuminescentMetalNanoclusters Few-AtomSilverClustersasFluorescentReporters ...307 IsabelD?'ezandRobinH. A. Ras LuminescentQuantumClustersofGoldasBio-Labels ...333 M. A. HabeebMuhammedandT. Pradeep PartV ConjugatedPolymers Structure,EmissiveProperties,andReportingAbilities ofConjugatedPolymers ...357 MaryA. Reppy OpticalReportingbyConjugatedPolymers viaConformationalChanges ...389 RozalynA. SimonandK. PeterR. Nilsson FluorescenceReportingBasedonFRETBetweenConjugated PolyelectrolyteandOrganicDyeforBiosensorApplications ...417 Kan-YiPuandBinLiu Index ...455 PartI GeneralAspects NanocrystalsandNanoparticlesVersus MolecularFluorescentLabelsasReporters forBioanalysisandtheLifeSciences: ACriticalComparison UteResch-Genger,MarkusGrabolle,RolandNitschke,andThomasNann Abstract At the core of photoluminescence techniques are suitable ?uorescent labels and reporters, the spectroscopic properties of which control the limit of detection,thedynamicrange,andthepotentialformultiplexing.

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas."

Over the last two decades, the search for a compact, high-power semiconductor source has produced many designs and concepts for monolithic diode-laser arrays and optical amplifiers. However, only a few design approaches have emerged with the potential for producing high-power, high-brightness monolithic sources. Although semiconductor-diode lasers are the most compact, highest gain and most efficient laser sources, challenges remain in developing structures that will produce high-quality, diffraction-limited output beams. This book presents and analyzes the results of work performed over the last twenty years in the development of high-brightness diode-laser arrays.

Boron has all the best tunes. That may well be the first impression of the Group 13 elements. The chemical literature fosters the impression not only in the primary journals, but also in asteady outflowofbooks focussing more or less closely on boron and its compounds. The same preoccupation with boron is apparent in the coverage received by the Group 13 elements in the comprehensive and regularly updated volume of the Gmelin Handbook. Yet such an imbalance cannot be explained by any inherent lack ofvariety, interest or consequence in the 'heavier elements. Aluminium is the most abundant metal in the earth's crust; in the industrialised world the metal is second only to iron in its usage, and its compounds can justifiably be said to touch our lives daily - to the potential detriment of those and other lives, some would argue. From being chemical curios, gallium and indium have now gained considerably prominence as sources of compound semiconductors like gallium arsenide and indium antimonide. Nor is there any want ofincident in the chemistriesofthe heavier Group 13 elements. In their redox, coordination and structural properties, there is to be found music indeed, notable not always for its harmony but invariably for its richness and variety. Thisbook seeks to redress the balance with a definitive, wide-rangingand up-to-date review of the chemistry of the Group 13 metals aluminium, gallium, indium and thallium.

Electronic materials are a dominant factor in many areas of modern technology. The need to understand'them is paramount; this book addresses that need. The main aim of this volume is to provide a broad unified view of electronic materials, including key aspects of their science and technology and also, in many cases, their commercial implications. It was considered important that much of the contents of such an overview should be intelligible by a broad audience of graduates and industrial scientists, and relevant to advanced undergraduate studies. It should also be up to date and even looking forward to the future. Although more extensive, and written specifically as a text, the resulting book has much in common with a short course of the same name given at Coventry Polytechnic. The interpretation of the term "electronic materials" used in this volume is a very broad one, in line with the initial aim. The principal restriction is that, with one or two minor exceptions relating to aspects of device processing, for example, the materials dealt with are all active materials. Materials such as simple insulators or simple conductors, playing only a passive role, are not singled out for consider ation. Active materials might be defined as those involved in the processing of signals in a way that depends crucially on some specific property of those materials, and the immediate question then concerns the types of signals that might be considered."

Based on a NATO Advanced Summer Institute, this volume discusses physical models, mathematical formalisms, experimental techniques, and applications for ultrafast dynamics of quantum systems. These systems are used in laser optics, spectroscopy, and utilize monochromaticity, spectral brightness, coherence, power density, and tunability of laser sources.

Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices, piezodevices, and electroluminescencedevices were discussed.