In this monograph, the authors offer a comprehensive examination of the latest research on Laser Chemical Vapor Deposition (LCVD). Chapters explore the physics of LCVD as well as the principles of a wide range of related phenomena-including laser-matter interactions, heat transfer, fluid flow, chemical kinetics, and adsorption. With this reference, researchers will discover how to apply these principles to developing theories about various types of LCVD processes; gain greater insight into the basic mechanisms of LCVD; and obtain the ability to design and control an LCVD system.

Glasses containing metallic nanoparticles exhibit very promising linear and nonlinear optical properties, mainly due to the surface plasmon resonances (SPRs) of the nanoparticles. The spectral position in the visible and near-infrared range and polarization dependence of the SPR arecharacteristically determined by the nanoparticles shapes.

The focus of "Ultra-Short Pulsed Laser Engineered Metal-Glass Nanocomposites" is the interaction of intense ultra-short laser pulses with glass containing silver nanoparticles embedded in soda-lime glass, and nanostructural modifications in metal-glass nanocomposites induced by such laser pulses. In order to provide a comprehensive physical picture of the processes leading to laser-induced persistent shape transformation of the nanoparticles, series of experimental results investigating the dependences of laser assisted shape modifications of nanoparticles with laser pulse intensity, excitation wavelength, temperature are considered. In addition, the resulting local optical dichroism allows producing very flexibly polarizing optical (sub-) microstructures with well-specified optical properties. The achieved considerable progress towards technological application of this technique, in particular also for long-term optical data storage, is also discussed.

It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in dependent from each other, with a completely different background and different intentions in mind. At this time, some important monographs appeared or have been in preparation. There are the three "classical" ones, from our point of view: the so-called "1984 Guide" [12J by Brandt, the "Multi-Grid Methods and Applications" [49J by Hackbusch and the so-called "Fundamentals" [132J by Stiiben and Trottenberg. Stiiben and Trottenberg in [132J state a "delayed acceptance, resent ments" with respect to multigrid algorithms. They complain: "Nevertheless, even today's situation is still unsatisfactory in several respects. If this is true for the development of standard methods, it applies all the more to the area of really difficult, complex applications." In spite of all the above mentioned publications and without ignoring important theoretical and practical improvements of multigrid, this situa tion has not yet changed dramatically. This statement is made under the condition that a numerical principle like multigrid is "accepted", if there exist "professional" programs for research and production purposes. "Professional" in this context stands for "solving complex technical prob lems in an industrial environment by a large community of users". Such a use demands not only for fast solution methods but also requires a high robustness with respect to the physical parameters of the problem.

Although exploratory and developmental activity in electron beam testing (EBT) 25 years, it was not had already been in existence in research laboratories for over until the beginning of the 1980s that it was taken up seriously as a technique for integrated circuit (IC) testing. While ICs were being fabricated on design rules of several microns, the mechanical ne edle probe served quite adequately for internal chip probing. This scenario changed with growing device complexity and shrinking geometries, prompting IC manufacturers to take note ofthis new testing technology. It required several more years and considerable investment by electron beam tester manufacturers, however, to co me up with user-friendly automated systems that were acceptable to IC test engineers. These intervening years witnessed intense activity in the development of instrumentation, testing techniques, and system automation, as evidenced by the proliferation of technical papers presented at conferences. With the shift of interest toward applications, the technology may now be considered as having come of age.

Boron has all the best tunes. That may well be the first impression of the Group 13 elements. The chemical literature fosters the impression not only in the primary journals, but also in asteady outflowofbooks focussing more or less closely on boron and its compounds. The same preoccupation with boron is apparent in the coverage received by the Group 13 elements in the comprehensive and regularly updated volume of the Gmelin Handbook. Yet such an imbalance cannot be explained by any inherent lack ofvariety, interest or consequence in the 'heavier elements. Aluminium is the most abundant metal in the earth's crust; in the industrialised world the metal is second only to iron in its usage, and its compounds can justifiably be said to touch our lives daily - to the potential detriment of those and other lives, some would argue. From being chemical curios, gallium and indium have now gained considerably prominence as sources of compound semiconductors like gallium arsenide and indium antimonide. Nor is there any want ofincident in the chemistriesofthe heavier Group 13 elements. In their redox, coordination and structural properties, there is to be found music indeed, notable not always for its harmony but invariably for its richness and variety. Thisbook seeks to redress the balance with a definitive, wide-rangingand up-to-date review of the chemistry of the Group 13 metals aluminium, gallium, indium and thallium.

Electronic materials are a dominant factor in many areas of modern technology. The need to understand'them is paramount; this book addresses that need. The main aim of this volume is to provide a broad unified view of electronic materials, including key aspects of their science and technology and also, in many cases, their commercial implications. It was considered important that much of the contents of such an overview should be intelligible by a broad audience of graduates and industrial scientists, and relevant to advanced undergraduate studies. It should also be up to date and even looking forward to the future. Although more extensive, and written specifically as a text, the resulting book has much in common with a short course of the same name given at Coventry Polytechnic. The interpretation of the term "electronic materials" used in this volume is a very broad one, in line with the initial aim. The principal restriction is that, with one or two minor exceptions relating to aspects of device processing, for example, the materials dealt with are all active materials. Materials such as simple insulators or simple conductors, playing only a passive role, are not singled out for consider ation. Active materials might be defined as those involved in the processing of signals in a way that depends crucially on some specific property of those materials, and the immediate question then concerns the types of signals that might be considered."

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas."

Over the last two decades, the search for a compact, high-power semiconductor source has produced many designs and concepts for monolithic diode-laser arrays and optical amplifiers. However, only a few design approaches have emerged with the potential for producing high-power, high-brightness monolithic sources. Although semiconductor-diode lasers are the most compact, highest gain and most efficient laser sources, challenges remain in developing structures that will produce high-quality, diffraction-limited output beams. This book presents and analyzes the results of work performed over the last twenty years in the development of high-brightness diode-laser arrays.

Based on a NATO Advanced Summer Institute, this volume discusses physical models, mathematical formalisms, experimental techniques, and applications for ultrafast dynamics of quantum systems. These systems are used in laser optics, spectroscopy, and utilize monochromaticity, spectral brightness, coherence, power density, and tunability of laser sources.

The on-going developments, and the recent achievements of the superconducting electronics (especially in the field of Josephson junctions and the inherent nonlinear dynamics) inspired us to organize a conference where different groups working on the subject could meet and discuss the latest results of their investigations. This idea was realized as two joint workshops, the NATO Advanced Research Workshop on Superconducting Electronics with Prof. N.F. Pedersen as chairman, and the 2nd Workshop on Josephson Devices, with Profs. G. Costabile and M. Russo as chairmen, held in Capri, Italy on September 3-7, 1990. The Workshops were very successful. About 70 scientists from 12 countries (Denmark, France, Germany, Greece, Italy, Japan, People's Republic of China, Sweden, United Kingdom, USA, USSR, and Venezuela) enjoyed the many interesting and mostly informal occasions for scientific exchanges as well as the very pleasant weather of Southern Italy. We are very grateful to the Institutions which made possible the realization and the success of the conference with their financial support : NATO Science Committee through the NATO International Scientific Exchange Programmes, University of Salerno, and Istituto di Cibernetica of the Consiglio Nazionale delle Ricerche (C.N.R.) of Italy. The conference was held under the auspices of the Progetto Finalizzato "Superconductive and Cryogenic Technologies" of C.N.R. Finally special thanks go to our Conference Secretary Anna Maria Mazzarella for carrying out most of the organizative work, and for her continuous "on stage" support in solving all the problems which inevitably arise in such occasions.

Photochromism is the reversible phototransformation of a chemical species between two forms having different absorption spectra. During the phototransformation not only the absorption spectra but also various physicochemical properties change, such as the refractive index, dielectric constant, oxidation/reduction potential, and geometrical structure. The property changes can be applied to photonic equipment such as erasable memory media, photo-optical switch components, and display devices. This book compiles the accomplishments of the research project titled "New Frontiers in Photochromism" supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan. The project focused not only on the above-mentioned classical subjects in photochromism, such as color changes, optical memory, and optical switches, but also on fundamental physicochemical studies and unprecedented application fields that have not yet been explored in photochromism. The latter topics include light-driven mechanical motion, photocontrol of surface wettability, metal deposition on solid materials, photocontrol of chiral properties, ultrafast decoloration dyes, and femtosecond laser experiments, among others.

The present volume is a continuation ofthe EL.B.A. Forum Series which was initiated in the spring of 1992 in Marciana Marina (Italy), with the first volume entitled From Neural Networks and Biomolecu/ar Engineering to Bioelectronics published by Plenum Press in 1995. Bioelectronics-miginally introduced in April, 1987, at a symposium hosted by CIREF, a research consortium among leading high tech industries in Novara (Italy)---was later defined in two successive consensus reports at the first (Bruxelles, 1991) and second (Frankfurt, 1994) European Union Workshops on this widely interdisciplinary field, as "the use ofbiological materials and biological architectures for information processing and sens- ing systems and devices down to molecular Ievel." lt is worth noting that these workshops gave birth to the first European research program on "lnterfacing Biology with Electronics" during 1996-1999, following the !arge Programma Nazionale Ricerca on "Technologies for Bioelectronics" launched by the ltalian Ministry ofUniversities and Research in 1990. In autumn, 1996, with the second volume, entitledMolecular Manufacturing, the em- phasis was placed on the ernerging parallel area of nanotechnology, independently initiated in Palo Alto, Zurich, Genova, Mainz, and Tokyo by various groups (i.e., IBM, Xerox, Polo Nazionale Bioelettronica, Max Planck Institutes), universities (i.e., Stanford, Genova, Rice, Tokyo), and organizations (i.e., Foresight, Erato, Fondazione EL.B.A., Frontiers Research, MITI) of different sizes, scopes, and latitudes.

For the eighth Advanced Study Institute (ASI) on Techniques and Concepts of High-Energy Physics we returned once again to the Hotel on the Cay on that speck of land in the harbor of Christiansted, St. Croix, U. S. Virgin Islands. This time, the ASI brought together a total of 73 participants, from 21 countries. The primary support for the meeting was provided, as usual, by the Scientific Affairs Division of the North Atlantic Treaty Organization (NATO). The ASI was cosponsored by the U. S. Department of Energy, by the Fermi National Accelerator Laboratory (Fermilab), by the U. S. National Science Foundation, and by the University of Rochester. A special contribution from the Oliver S. and Jennie R. Donaldson Charitable Trust provided an important degree of flexibility, as well as support for worthy students from developing countries. In addition, the International Science Foundation contributed very generously to the support of a participant from Russia. As in the case of the previous ASls, the scientific program was designed for advanced graduate students and recent PhD recipients in experimental particle physics. The present volume of lectures, although, unfortunately, short of three contributions, should complement the material published in the first seven ASIs, and prove to be of value to a wider audience of physicists. It is a pleasure to acknowledge the encouragement and support that I have continued to receive from colleagues and friends in organizing this meeting.

The International Workshop on Coherent Control of Carrier Dynamics in Semiconductors was held May 19 to 22, 1998 at the University of Illinois at Chicago. Its intent was to bring together an international and interdisciplinary group of scientists to discuss recent progress, pertinent problems, and open questions in the field of coherent control in atoms, molecules, and semiconductors, in particular. Twenty-seven scientists from the physical chemistry, quantum optics, semiconductor, electrical engineering, and laser communities accepted our invitation and made this event a meeting of exciting presentations and vivid discussions. This volume contains the proceedings of this workshop. Most speakers accepted our invitation to provide a manuscript either on specific aspects of their work or a brief review of their area of research. All manuscripts were reviewed. It is hoped that they provide not merely an overview of most of the issues covered during the workshop, but also represent an account of the current state of coherent control in general. Hence, it is hoped that they are also of interest to a large number of scientists active in one of the areas listed above. The organizers of this workshop would like to thank all the participants for making this meeting a complete success. We are particularly indebted to Dr. Larry R. Cooper at the U.S. Office of Naval Research and Dr.

The combination of solid materials of different structural dimensionality with atomic or molecular guest species via intercalation processes represents a unique and widely variable low temperature synthesis strategy for the design of solids with particular composition, structure and physical properties. In the last decade this field has experienced a rapid development and represents now an established specific domain of solid state research and materials science. Substantial progress has been made with respect to an understanding of the complex relationship between structure, bonding, physical properties and chemical reactivity since the first volume on the subject appeared in this series in 1979 (Intercalated Layered Materials, F. Levy, ed.). The purpose of this volume is to present a survey on progress and per spectives based on the treatment of a series of major areas of activities in this field. By the very nature of its subject this monograph has an interdisciplinary character and addresses itself to chemists, physicists and materials scien tists interested in intercalation research and related aspects such as design and characterization of complex materials, low temperature synthesis, solid state reaction mechanisms, electronic/ionic conductivity, control of electronic properties of solids with different structural dimensionality and application of intercalation systems. Several chapters have been devoted to specific groups of host lattices.

This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics," which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated."

Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication."

Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.

In November 2001 the Mathematical Research Center at Oberwolfach, Germany, hosted the third Conference on Mathematical Models and Numerical Simulation in Electronic Industry. It brought together researchers in mathematics, electrical engineering and scientists working in industry.

The contributions to this volume try to bridge the gap between basic and applied mathematics, research in electrical engineering and the needs of industry.

Integrated circuits are finding ever wider applications through a range of industries. Introduction to VLSI Process Engineering presents the design principles for devices, describes the overall VLSI process, and deals with the essential manufacturing technologies and inspection procedures.

In this chapter, first the parametric principle is illustrated by two simple examples, one mechanical and one electrical. Then the realization of time varying reactances is explained, followed by a short history of "parametric electronics." This survey demonstrates the importance of parametric circuits in the field of low-noise microwave electronics as well as explains the organization of this book. 1.1 The Parametric Principle An oscillating system comprising a single or several time-varying energy storing elements is called a parametric system; usually the variations are harmonic functions of time. Everybody knows one example of a mechanical parametric system from his childhood, namely, a swing. Therefore, we will start with this example though as it turns out, a swing is a rather compli cated parametric system. Fortunately, the electrical parametric systems, which form the object of this book, are simpler. Figure 1.1 shows such a swing. If it is removed from its equilibrium position and the child stands on it in a fixed attitude, the swing oscillates with a certain amplitude, the magnitude of which decreases with time due to the mechanical friction of the system. To increase the amplitude of oscil lation, the child changes positions during swinging: it crouches and straightens in a certain way twice during one cycle of the swing."

System-on-a-chip (SoC) designs result in a wide range of high-complexity, high-value semiconductor products. As the technology scales towards smaller feature sizes and chips grow larger, a speed limitation arises due to an in creased RC delay associated with interconnection wires. Innovative circuit techniques are required to achieve the speed needed for high-performance signal processing. Current sensing is considered as a promising circuit class since it is inherently faster than conventional voltage sense amplifiers. How ever, especially in SRAM, current sensing has rarely been used so far. Practi cal implementations are challenging because they require sophisticated analog circuit techniques in a digital environment. The objective of this book is to provide a systematic and comprehen sive insight into current sensing techniques. Both theoretical and practical aspects are covered. Design guidelines are derived by systematic analysis of different circuit principles. Innovative concepts like compensation of the bit line multiplexer and auto-power-down will be explained based on theory and experimental results. The material will be interesting for design engineers in industry as well as researchers who want to learn about and apply current sensing techniques. The focus is on embedded SRAM but the material presented can be adapted to single-chip SRAM and to any other current-providing memory type as well. This includes emerging memory technologies like magnetic RAM (MRAM) and Ovonic Unified Memory (OUM). Moreover, it is also applicable to array like structures such as CMOS camera chips and to circuits for signal trans mission along highly capacitive busses."

In Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices the contributions of the International Conference on Nonlinear Dynamics and Pattern Formation in the Natural Environment (ICPF '94) in Noordwijkerhout, held by many internationally reknown experts, are compiled. To connect the field of semiconductor physics with the theory of nonequilibrium dissipative systems, the emphasis lies on the study of localized structures, their stability and bifurcation behaviour. A point of special interest is the evolution of dynamic structures and the investigation of more complex structures arising from interactions between these structures. Possible applications of nonlinear effects and self-organization phenomena with respect to signal processing are discussed.