Fluorescence reporter is the key element of any sensing or imaging technology. Its optimal choice and implementation is very important for increasing the sensitivity, precision, multiplexing power, and also the spectral, temporal, and spatial reso- tion in different methods of research and practical analysis. Therefore, design of ?uorescence reporters with advanced properties is one of the most important problems. In this volume, top experts in this ?eld provide advanced knowledge on the design and properties of ?uorescent dyes. Organic dyes were the ?rst ?uorescent materials used for analytical purposes, and we observe that they retain their leading positions against strong competition of new materials - conjugated polymers, semiconductor nanocrystals, and metal chelating complexes. Recently, molecular and cellular biology got a valuable tool of organic ?uorophores synt- sized by cell machinery and incorporated into green ?uorescent protein and its analogs. Demands of various ?uorescence techniques operating in spectral, anisotropy, and time domains require focused design of ?uorescence reporters well adapted to these techniques. Near-IR spectral range becomes more and more attractive for various applications, and new dyes emitting in this range are strongly requested. Two-photonic ?uorescence has become one of the major tools in bioimaging, and ?uorescence reporters well adapted to this technique are in urgent need. These problems cannot be solved without the knowledge of fundamental principles of dye design and of physical phenomena behind their ?uorescence response.

This volume deals with the basic knowledge and understanding of fundamental interactions of low energy electrons with molecules. It pro vides an up-to-date and comprehensive account of the fundamental in teractions of low-energy electrons with molecules of current interest in modern technology, especially the semiconductor industry. The primary electron-molecule interaction processes of elastic and in elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are discussed, and state-of-the art authoritative data on the cross sections of these processes as well as on rate and transport coefficients are provided. This fundamental knowledge has been obtained by us over the last eight years through a critical review and comprehensive assessment of "all" available data on low-energy electron collisions with plasma processing gases which we conducted at the National Institute of Standards and Technology (NIST). Data from this work were originally published in the Journal of Physical and Chemical Reference Data, and have been updated and expanded here. The fundamental electron-molecule interaction processes are discussed in Chapter 1. The cross sections and rate coefficients most often used to describe these interactions are defined in Chapter 2, where some recent advances in the methods employed for their measurement or calculation are outlined. The methodology we adopted for the critical evaluation, synthesis, and assessment of the existing data is described in Chapter 3. The critically assessed data and recommended or suggested cross sections and rate and transport coefficients for ten plasma etching gases are presented and discussed in Chapters 4, 5, and 6."

Published in honour of the 70th birthday of Yoh-Han Pao, George S. Dively Dis tinguished Professor of Engineering at Case Western Reserve University, Cleveland, Ohio, this festschrift embraces a remarkably diverse set of topics. Drawing from the fields of pattern recognition, engineering, artificial intelligence and artificial neural systems, it is a fitting testament to the extraordinary breadth of his professional in terests both in foundational research into the new technology of Intelligent Systems and ill the application of that evolving technology to the solution of hard engineering problems. In common with many scientists who build their reputations in one field before devoting their considerable energies and talents to another one, by 1972, the year in which I met him for the first time, Yoh-Han had made significant contributions to laser technology, in particular to the development of the highly accurate and stable lasers required for holographic recording purposes. In conventional holography, the information stored in a hologram produces a virtual image of the object charac terised by it. However, Yoh-Han became fascinated by the possiblity of driving the process hackwards, of using the hologram as an associative memory device enabling previously stored information to be retrieved on the basis of partial cues. It was this burgeoning interest which shaped his career for more than twenty years. Just prior to 1972, my colleagues Professor Christopher Longuet-Higgins and Dr."

Electroactive polymers have been the object of increasing academic and industrial interest and in the past ten to fifteen years substantial progress has been achieved in the development and the characterization of this important new class of conducting materials. These materials are usually classified in two large groups, according to the mode of their electric transport. One group includes polymers having transport almost exclusively of the ionic type and they are often called 'polymer electrolytes' or, in a broader way, 'polymer ionics'. The other group includes polymeric materials where the transport mechanism is mainly electronic in nature and which are commonly termed 'conducting polymers'. Ionically conducting polymers or polymer ionics may be typically described as polar macromolecular solids in which one or more of a wide range of salts has been dissolved. The most classic example is the combina tion of poly(ethylene oxide), PEO, and lithium salts, LiX. These PEO-LiX polymer ionics were first described and proposed for applications just over ten years ago. The practical relevance of these new materials was im mediately recognized and in the course of a few years the field expanded tremendously with the involvement of many academic and industrial lab oratories. Following this diversified research activity, the ionic transport mechanism in polymer ionics was soon established and this has led to the development of new host polymers of various types, new salts and advanced polymer architectures which have enabled room temperature conductivity to be raised by several orders of magnitude."

Semimagnetic semiconductors (SMSC) and diluted magnetic semiconductors (DMS) have in the past decade attracted considerable attention because they confer many new physical properties on both bulk materials and heterostructures. These new effects are due either to exchange interactions between magnetic moments on magnetic ions, or to exchange interactions between magnetic moments and the spin of the charge carrier. These effects vary with the transition metal (Mn, Fe, Co) or rare earth (Eu, Gd, etc) used and thus provide a range of different situations. The field is very large (zero gap, small gap, wide gap), and the magnetic properties also are very rich (paramagnetic spin glass, antiferromagnetism). These materials are very convenient for studying the magnetism (the magnetism is diluted) or the superlattices (SL) with a continuous change from type II SL to type III SL. This Course attempted to provide a complete overview of the topic. The participants of this summer school held in Erice came from ten countries and were from various backgrounds and included theoreticians, experimentalists, physicists, and chemists. Consequently, an attempt was made to make the Course as thorough as possible, but at the same time attention was devoted to basic principles. The lecturers, drawn from all the groups in the world involved in the field, were asked to be very didactic in their presentation. After two introductory lectures, Dr.

Good old Gutenberg could not have imagined that his revolutionary printing concept which so greatly contributed to dissemination of knowledge and thus today 's wealth, would have been a source of inspiration five hundred years later. Now, it seems intuitive that a simple way to produce a large number of replicates is using a mold to emboss pattern you need, but at the nanoscale nothing is simple: the devil is in the detail. And this book is about the "devil." In the following 17 chapters, the authors-all of them well recognized and active actors in this emerging field-describe the state-of-the-art, today 's technological bottlenecks and the prospects for micro-contact printing and nanoimprint lithography. Many results of this book originate from projects funded by the European Com mission through its "Nanotechnology Information Devices" (NID) initiative. NID was launched with the objective to develop nanoscale devices for the time when the red brick scenario of the ITRS roadmap would be reached. It became soon clear however, that there was no point to investigate only alternative devices to CMOS, but what was really needed was an integrated approach that took into account more facets of this difficult undertaking. Technologically speaking, this meant to have a coherent strategy to develop novel devices, nanofabrication tools and circuit & system architectures at the same time."

The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy." High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available."

It is now firmly established that various adsorptive and catalytic processes taking place on the surface of semiconductors and in MIS structures strongly influence their electronic properties and hence modify the parameters of semi conductor devices. The inverse problem of how the semiconductor's electronic subsystem influences adsorption and dissociation of molecules at the surface has been recognized but much less explored. The main purpose of the present book is to generalize the experimental data and explain the relationship be tween these two classes of phenomena. We also discuss tentative models of surface electronic states and their interaction with adsorbed molecules. The subject of this book should attract the attention of researchers work ing in the overlapping areas of physics and chemistry, and of physics and biology. The research done in this field will help to widen the scope of semi conductor applications by finding novel ways of employing surface effects in the construct ion of mi croe 1 ectroni c devi ces, semi conductor gas ana lysers, solar cells, etc. The authors hope that this book will be useful to a wide circle of chemists and physicists concerned with the study of interphase phenomena and questions of adsorption and catalysis. Certain parts of the book will be helpful to physicists and technicians working in rapidly developing branches of semicon ductor physics and technology. The book can also serve as a textbook for both under- and postgraduates speci al i zi ng in thi s fi e 1 d."

The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.

The combination of solid materials of different structural dimensionality with atomic or molecular guest species via intercalation processes represents a unique and widely variable low temperature synthesis strategy for the design of solids with particular composition, structure and physical properties. In the last decade this field has experienced a rapid development and represents now an established specific domain of solid state research and materials science. Substantial progress has been made with respect to an understanding of the complex relationship between structure, bonding, physical properties and chemical reactivity since the first volume on the subject appeared in this series in 1979 (Intercalated Layered Materials, F. Levy, ed.). The purpose of this volume is to present a survey on progress and per spectives based on the treatment of a series of major areas of activities in this field. By the very nature of its subject this monograph has an interdisciplinary character and addresses itself to chemists, physicists and materials scien tists interested in intercalation research and related aspects such as design and characterization of complex materials, low temperature synthesis, solid state reaction mechanisms, electronic/ionic conductivity, control of electronic properties of solids with different structural dimensionality and application of intercalation systems. Several chapters have been devoted to specific groups of host lattices.

The unexpected and therefore really amazing discovery of J.G. Bednorz and K.A. Muller, that certain oxide compounds enter a superconductivity state at temperatures above 30 K, pushed research on superconductivity into the limelight of science in general in a way that seemed reserved only for high energy or particle physics. It may therefore be expected that this entire review would solely deal with superconductivity at high temperatures, i.e. above the boiling point of hydrogen. Any unexpected occurrence of superconductivity is, however, a challenge to scientists interested either in the physics of this phenomenon or in its materials science aspects. In this respect, the eighties have been quite revolutionary in the sense that, on various occasions, superconductivity was discovered in materials whose physical properties were not obviously favourable for adopting this ground state. Therefore, apart from emphasizing the topic of oxide superconductors, this collection of reprints also contains a selection of papers that deal with other subjects, such as coexistence of magnetic order and superconductivity, heavy electron and organic superconductors. This is all the more justified when we consider the fact that various aspects of superconductivity in high Tc oxide compounds are, or might be, connected with features that are also observed in these other materials. For nonspecialists who might be interested in this collection of reprints the Editor briefly reviews the possibilities for identifying superconductivity and discusses some special features of the superconducting state. "

Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

The 2001 Dutch Sensor Conference held on 14 -15 May 2001, at the University of Twente in Enschede, The Netherlands, is the fourth in a series ofmeetings. The conference is initiated by the Dutch Technology Foundation (STW) in order to stimulate the industrial application ofsensor research. This MESA Monograph contains a collection oflatest research and development from all major Dutch centers ofsensor research and aspect ofsensor commercialization. Thus it provides an excellent overview ofthe state ofthe art ofDutch Sensor Technology in the new millennium. I should like to acknowledge the work ofthe program committee, the local organizing committee and, ofcourse, the contributors to this volume. All ofthem made the conference a success. Prof. Dr. Miko Elwenspoek Conference Chairman Program Committee: M. Elwenspoek (Chairman) (MESA+) A.van den Berg (MESA+) PJ. French (TV Delft) P.V. Lambeck (MESA+) H. Leeuwis (3T) J.c. Lotters (Bronkhorst) HAC. Tilmans (IMEC) Contents MEASUREMENT SYSTEM FOR BIOCHEMICAL ANALYSIS BASED 1 ON CAPILLARY ELECTROPHORESIS AND MICROSCALE CONDUCTIVITY DETECTION F. Laugere, A. Berthold, R.M Guijt, E. Baltussen, J. Bastemeijer, P.M Sarro, MJ. Vellekoop ELECTRO-OSMOTIC FLOW CONTROL IN MICROFLUIDICS 7 SYSTEMS R.E. Oosterbroek,MH. Goedbloed, A. Trautmann, N.J. van der Veen, S Schlautmann, 1.W Berenschot, A. van den Berg FLOW SENSING USING THE TEMPERATURE DISTRIBUTION 13 ALONG A HEATED MICROBEAM J.J. van Baar, RJ Wiegerink,GJM Krijnen, T.SJ. Lammerink, M.C.

This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.

This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

This is the first comprehensive resource of power device electrical characteristics in a cryogenic environment. Using theoretical and experimental knowledge from the literature, temperature dependence of fundamental silicon material parameters like intrinsic carrier concentration, carrier mobilities, lifetimes and bandgap narrowing was identified. The temperature dependent model of avalanche breakdown was developed using experimental data on numerous devices. A wide range of power devices, each with its own unique features, was chosen for theoretical and experimental analysis. Using these analyses, Schottky diodes, power MOSFETs, power BJTs, and power JFETs were optimized in the 300-77K temperature range. Cryogenic Operation of Silicon Power Devices presents the different characteristics of power devices operated below -55 C (220K). It provides data and physics based models for power devices operated at temperatures down to 77K for the first time within a single source. All commercially available devices have been included to provide comprehensive coverage.Also, a fundamental analysis of devices identifies the suitability of various devices to applications requiring cryogenic operations. A quantitative analysis of the relative strengths and weaknesses of these devices is also presented.

Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.

Laser materials processing has made tremendous progress and is now at the forefront of industrial and medical applications. The book describes recent advances in smart and nanoscaled materials going well beyond the traditional cutting and welding applications. As no analytical methods are described the examples are really going into the details of what nowadways is possible by employing lasers for sophisticated materials processing giving rise to achievements not possible by conventional materials processing.

Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.

Thisvolumereportsthemajorpartofthescientificcontributionsofthefirstinternational workshoponSuperconductingNano-ElectronicsDevices(SNED)heldinNapoli,Italy,at theendofMay2001. Theaimoftheworkshopwastofocusonrecentexperimentalandtheoreticalresultsin thefieldofsuperconductingnano-electronicsdevices. Itcombinedphysicswithpresent andfuturetechnologicalapplications:bothfundamentalandappliedaspectswerecovered. SpecialemphasiswasgiventoquantumcoherenceandcomputationusingsmallJosephson junctions,noiseinultrasensitivenanodevicesandpossibilitiesofmakinguseofsupercon- ductivityinvariouson-chipdevices. Withtheseattributesandwithrecognizedinvited speakersintheirspecialtiestheworkshopmanagedtobringtogetheracollectionof scientistsfromnearbybutdistinctresearchcommunities. Thiswaytheatmosphereofthe workshopbecameveryopenanddiscussionswerelivelybothduringandoutsidethe sessions. Thisfreshdiscussionhopefullygaveeveryparticipantalotofnewideasfor furtherworkbackintheirhomeinstitutes. OneofthecentraltopicsintheworkshopwastheuseofdifferentJosephsonjunction configurationsasimplementationsofquantumbits. Atthetimeoftheworkshopwewere justwaitingforthesecondwaveofbreakthroughsinthisfield:theresultsemergingfrom theparticipatinglaboratoriesoftheworkshopjustatthetimeofthewritingofthispreface perhapsalsoprovetheusefulnessofourworkshop. Anotherfocuswasonvarioustopicsrelatedtoultrasensativedetectors. Theybring quantumlimitationstoapplications,andmanydeviceconceptsareresultsofunderstanding fundamentalandexcitingphenomenainsuperconductivity. Noiseandon-chipcooling wereexplicitlydiscussedinthedetectorsessionsaswell. ThechoiceofthelocationrecognizestheroleandthetraditionsofNapoliespeciallyin thefieldofmacroscopicquantumcoherence,oneofthemainissuesoftheworkshop. It furtherguaranteedtheparticipantsastimulatingatmosphereatthemeeting. Inconclusion,wewishtothanktheIstitutoItalianopergliStudiFilosofici,theIstituto diCiberneticadelConsiglioNazionaledelleRicerche,theUniversityofJyviiskylii,the IstitutoNazionalediFisicaNucleare,theIstitutoNazionalediFisicadellaMateria,the DipartimentoScienzeFisiche,andtheRettoratodell'UniversitadiNapoli"FedericoII" fortheirsupport. ThanksarealsoduetoAirLiquide,CRY,Nanoway,OxfordInstruments, andRaith. ThisinitiativeisintheframeoftheinternationalactivityofMQC2Association on"MacroscopicQuantumCoherenceandComputing. "WeareindebtedtoC. Granata v vi PREFACE and V. Coratoforscientificassistance,andtoF. Caiazzo,E. DeGrazia,andA. M. Mazzarellafortheirvaluableassistanceinallthetasksconnectedtotheorganizationofthe Workshop. WearealsogratefultoL. Longobardi,A. Monaco,S. Piscitelli,andS. Rombetto forhintsandhelpduringtheWorkshop. ThanksareduetoL. DeFelice,S. Luongo,and V. Sindonifortheorganizationofthesocialevent. J. Pekola B. Ruggiero P. Silvestrini CONTENTS QuantumNondemolitionMeasurementsofaQubit . D. V. Averin BayesianQuantumMeasurementofaSingle-Cooper-PairQubit 11 A. Korotkov lIfNoiseinJosephsonQubits 15 E. Paladino, L. Faoro,G. Falci,and R. Fazio SwitchingCurrentsandQuasi-ParticlePoisoningintheSuperconducting SingleElectronTransistor 25 P. Agren,J. Walter,V. Sch611mann,andD. B. Haviland JosephsonSystemsforQuantumCoherenceExperiments 33 V. Corato,C. Granata, L. Longobardi,M. Russo,B. Ruggiero, andP. Silvestrini SolidStateAnalogueofDoubleSlitInterferometer...43 K. Yu. Arutyunov, T. T. Hongisto,andJ. P. Pekola NoiseandMicrowavePropertiesofSET-Transistors...53 M. Ejrnres,M. T. Savolainen,andJ. Mygind UseofSmallThnnelJunctionsOperatingatT=0. 3K 63 R. Leoni,M. G. Castellano,F. Chiarello,andG. Torrioli AHystericSingleCooperPairTransistorforSingleShotReadingof 73 aCharge-Qubit A. Cottet,D. Vion,P. Joyez,D. Esteve,andM. H. Devoret SingleCooperPairElectrometerBasedonaRadio-Frequency-SQUID Scheme 87 A. B. Zorin vii viii CONTENTS PossibilityofSingle-ElectronDevicesandSuperconductingCoherence 97 Yu. A. Pashkin, Y. Nakamura,T. Yamamoto,andJ. S. Tsai Frequency-LockedCurrentofCooperPairsinSuperconductingSingle ElectronTransistorwithOhmicResistor...105 S. V. Lotkhov,S. A. Bogoslovsky, A. B. Zorin,andJ. Niemeyer SetupforExperimentsontheSupercurrent-PhaseRelationinBloch Transistors-StatusandPossibleApplications 115 M. Gotz, V. V. Khanin, A. B. Zorin,E. Il'ichev,S. A. Bogoslovsky, andJ. Niemeyer Single-ElectronTransistorsintheRegimeofHighConductance...123 C. Wallisser,B;Limblach,P. yomStein,and R. Schiifer SuperconductingTransistor-EdgeSensorsforTime&EnergyResolved Single-PhotonCountersandforDarkMatterSearches 133 B. Cabrera OptimizationoftheHot-ElectronBolometerandaCascadeQuasiparticle 145 L. Kuzrnin NoiseinRefrigeratingTunnelJunctionsandinMicrobolometers...153 D. V. Anghel NonequilibriumQuasiparticlesandElectronCoolingbyNormalMetal- SuperconductorTunnelJunctions...165 D. Golubevand A. Vasenko MesoscopicJosephsonJunctionsCoupledtoWeakCoherentFields: AnExampleofReciprocalDetection 175 R. Miglioreand A. Messina DynamicsofSuperconductingInterferometersContainingPi-Junctions 183 V. K. Kornev, I. I. Soloviev, I. V. Borisenko,P. B. Mozhaev, andG. A.

This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the prop erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.

The properties of new nanoscale materials, their fabrication and applications, as well as the operational principles of nanodevices and systems, are solely determined by quantum-mechanical laws and principles. This textbook introduces engineers to quantum mechanics and the world of nanostructures, enabling them to apply the theories to numerous nanostructure problems. The textbook covers the fundamentals of quantum mechanics, including uncertainty relations, the Schrodinger equation, perturbation theory, and tunneling. These are then applied to a quantum dot, the smallest artificial atom, and compared to hydrogen, the smallest atom in nature. Nanoscale objects with higher dimensionality, such as quantum wires and quantum wells, are introduced, as well as nanoscale materials and nanodevices. Numerous examples throughout the text help students to understand the material.

Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs). Unlike IC devices, however, microtransducers must interact with their environment, so their numerical simulation is considerably more complex. While the design of ICs aims at suppressing "parasitic effects, microtransducers thrive on optimizing the one or the other such effect. The challenging quest for physical models and simulation tools enabling microtransducer CAD is the topic of this book. It is intended as a text for graduate students in Electrical Engineering and Physics and as a reference for CAD engineers in the microsystems industry. This text evolved from a series of courses offered to graduate students from Electrical Engineering and Physics. Much of the material in the book can be presented in about 40 hours of lecture time. The book starts with an illustrative example which highlights the goals and benefits of microtransducer CAD. This follows with a summary of model equations describing electrical transport in semiconductor devices and microtransducers in the absence of external fields. Models treating the effects of the external radiant, magnetic, thermal, and mechanical fields on electrical transport are then systematically introduced. To enable a smooth transition into modeling of mechanical systems, an abridged version of solid structural and fluid mechanics is presented, whereby the focus is on pertinent model equations and boundary conditions. This follows with model equations and boundary conditions relevant to various types of mechanical microactuators including electrostatic, thermal, magnetic, piezoelectric, and electroacoustic. The book concludes with a glimpse into SPICE simulation of the mixed-signal microsystem, i.e., microtransducer plus circuitry. Where possible, the model equations are supplemented with tables and/or graphs of process-dependent material data to enable the CAD engineer to carry out simulations even when reliable material models are not available. IVZ LANG: Introduction: Modeling and Simulation of Microtransducers; Illustrative Example; Progress in Microtransducer Modeling; References.- Basic Electronic Transport: Poisson s Equation; Continuity Equations; Carrier Transport in Crystalline Materials and Isothermal Behavior; Electrical Conductivity and Isothermal Behavior in Polycrystalline Materials; Electrical Conductivity and Isothermal Behavior in Metals; Boundary and Interface Conditions; The External Fields What Do They Influence?; References.- Radiation Effects on Carrier Transport: Reflection and Transmission of Optical Signals; Modeling Optical Absorption in Intrinsic Semiconductors; Absorption in Heavily-Doped Semiconductors; Optical Generation Rate and Quantum Efficiency; Low Energy Interactions with Insulators and Metals; High Energy Interactions and Monte Carlo Simulations; Model Equations for Radiant Sensor Simulation; Illustrative Simulation Example Color Sensor; References.- Magnetic-Field Effects on Carrier Transport: Galvanomagnetic Transport Equation; Galvanomagnetic Transport Coefficients; Equations and Boundary Conditions for Magnetic Sensor Simulation; Illustrative Simulation Example Micromachined Magnetic Vector Probe; References.- Thermal Non-Uniformity Effects on Carrier Transport: Non-Isothermal Effects; Electrothermal Transport Model; Electrical and Thermal Transport Coefficients; Electro-Thermo-Magnetic Interactions; Heat Transfer in Thermal Microstructures; Summary of Equations and Computational Procedure; Illustrative Simulation Example Micro Pirani Gauge; References.- Mechanical Effects on Carrier Transport: Piezoresistive Effect; Strain and Electron Transport; Strain and Hole Transport; Piezojunction Effect; Effects of Stress Gradients; Galvano-Piezo-Magnetic Effects; The Piezo Drift-Diffusion Transport Model; Illustrative Simulation Example Stress Effects on Hall Sensors; References.- Mechanical and Fluidic Signals: Definitions; Model Equations for Mechanical Analysis; Model Equations for Analysis of Fluid Transport; Illustrative Simulation Example Analysis of Flow Channels; References.- Micro-Actuation: Transduction Principles; State-of-the-Art and Preview; Electrostatic Actuation; Thermal Actuation; Magnetic Actuation; Piezoelectric Actuation; Electroacoustic Transducers; Computational Procedure and Coupling; Illustrative Example CMOS Micromirror.- Microsystem Simulation: Electrical Analogues for Mixed-Signals and Historical Developments; Circuit Modeling and Implementation Considerations; Lumped Analysis: Illustrative Example Electrostatic Micromirror; Distributed Analysis: Illustrative Example Flow Microsensor; References.- Subject Index."