A modern challenge is for solar cell materials to enable the highest solar energy conversion efficiencies, at costs as low as possible, and at an energy balance as sustainable as necessary in the future. This textbook explains the principles, concepts and materials used in solar cells. It combines basic knowledge about solar cells and the demanded criteria for the materials with a comprehensive introduction into each of the four classes of materials for solar cells, i.e. solar cells based on crystalline silicon, epitaxial layer systems of III-V semiconductors, thin-film absorbers on foreign substrates, and nano-composite absorbers. In this sense, it bridges a gap between basic literature on the physics of solar cells and books specialized on certain types of solar cells.The last five years had several breakthroughs in photovoltaics and in the research on solar cells and solar cell materials. We consider them in this second edition. For example, the high potential of crystalline silicon with charge-selective hetero-junctions and alkaline treatments of thin-film absorbers, based on chalcopyrite, enabled new records. Research activities were boosted by the class of hybrid organic-inorganic metal halide perovskites, a promising newcomer in the field.This is essential reading for students interested in solar cells and materials for solar cells. It encourages students to solve tasks at the end of each chapter. It has been well applied for postgraduate students with background in materials science, engineering, chemistry or physics.

Transparent flexible electronics is an emerging technology which makes use of wide band gap semiconductors that can be processed at low temperatures on glass or plastic substrates. Electronic systems that cover large area and curved surfaces together with transparency bring the possibility of numerous applications that are outside the scope of rigid wafer based electronics. Flexible electronics, electronic textiles, a wearable wellness system, and sensory skin are some of the applications of flexible electronics. The key factor in the realization of transparent electronics is the development of high performance fully transparent thin film transistors. Thin film transistors (TFTs) based on transparent conducting amorphous oxide semiconductors (TAOS) such as InGaZnO (IGZO), zinc tin oxide (ZTO), zinc indium tin oxide (ZITO), etc. provide additional functionalities like transparency, high field effect mobility and potential for room temperature processing. The performance of these TAOS based TFTs are superior to their silicon (a-Si:H TFTs) and organic TFTs. Though there are monographs and books on a-Si:H TFTs and organic TFTs, a book on TAOS based TFTs is rare. This book introduces the graduate students and beginners to the field of amorphous semiconductors. The mass production of this kind of TFTs on large area substrates involves the complications associated with controlling the composition of oxide compound semiconductor thin film material. Pulsed laser deposition allows for the growth of an oxide semiconductor in a very high oxygen rich environment while co-sputtering is an effective technique for the growth of a multicomponent film and to control the film chemical composition in a systematic and easy way. These manufacturing aspects will be of interest to those working in the industry. The review on the n channel, p channel TFTs, and the detailed description on the extraction of various TFT parameters like the threshold voltage, field effect mobility, sub threshold slope and on-off ratio etc. will be ready reckoner to those working in the field of transparent electronics.

The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

This book systematically examines the results of an investigation of electronic and molecular processes on the surface of semiconductors, taking place at their interaction with particles of a gas environment or in the course of superficial alloying by atoms of metals. The main subject of the book is the analysis of interaction of semiconductors with foreign atoms and molecules from a gas environment and from beams of elements, bombarding a surface. This book consists of five chapters, including 13 tables, 122 figures and bibliography based on over 500 sources, including author's publications and data originally never published in English before. The book acquaints the reader with basic concepts and positions, used at the description of interaction of semiconductor surface with foreign atoms and molecules. Demonstration of opportunities arising from the usage of local and collective approaches to the analysis of electronic and molecular processes on a surface is useful though insufficient in determining the sensitivity for adsorption of a semiconductors' surface.

This comprehensive monograph summarises the 30-year studies of borophosphosilicate glass (BPSG) thin film used in electronic technologies, including the authors personal experience with the film deposition, characterisation, and implementation in microelectronic technology. The main core of the monograph is the interrelation of chemical vapour deposition (CVD) kinetic features, thin film material properties, and electronic device technology aspects. Part one of the monograph is devoted to the analysis of thin film synthesis, such as: CVD methodology and BPSG film processes, silicon dioxide and glass film growth kinetics, CVD step coverage and gap-fill features. Part two of the book is a description of BPSG film properties, film structure, glass flow capability, BPSG film-moisture interaction and the film defect formation phenomenon. A number of experimental data are presented and discussed in detail.

This book consists of thirteen chapters each of them defining in depth the chapter subject and surveying recent developments in the field. The main objective of this book is to summarise the recent advances in material science of high-Tc superconductors, specify their properties, processing, and applications. New and challenging issues appear in this book, like superconducting nano wires, low cost RE-123, infiltration growth, processing of single domain porous Y-123, novel cold seeding method for the production of LRE-123 materials, flux pinning, magnetic shielding, and innovation in synthesis of MgB2. Further, it also covers large scale applications of bulk materials, HTS Maglev systems with bulk superconducting parts, development of superconducting permanent magnet system, pulsed field magnetisation and its application, and production and characterisation of HTS roebel cable.

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product. Cutting-Edge CMOS VLSI Design for Manufacturability TechniquesThis detailed guide offers proven methods for optimizing circuit designs to increase the yield, reliability, and manufacturability of products and mitigate defects and failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on delivering higher performance and lower power consumption. Costs, constraints, and computational efficiencies are also discussed in the practical resource. Nanoscale CMOS VLSI Circuits covers: Current trends in CMOS VLSI design Semiconductor manufacturing technologies Photolithography Process and device variability: analyses and modeling Manufacturing-Aware Physical Design Closure Metrology, manufacturing defects, and defect extraction Defect impact modeling and yield improvement techniques Physical design and reliability DFM tools and methodologies

The dimensions of modern semiconductor devices are reduced to the point where classical semiconductor theory, including the concepts of continuous particle concentration and continuous current, becomes questionable. Further questions relate to two-dimensional transport in the most important field-effect devices and one-dimensional transport in nanowires and carbon nanotubes. Designed for upper-level undergraduate and graduate courses, Principles of Semiconductor Devices, Second Edition, presents the semiconductor-physics and device principles in a way that upgrades classical semiconductor theory and enables proper interpretations of numerous quantum effects in modern devices. The semiconductor theory is directly linked to practical applications, including the links to the SPICE models and parameters that are commonly used during circuit design. The text is divided into three parts: Part I explains semiconductor physics; Part II presents the principles of operation and modeling of the fundamental junctions and transistors; and Part III provides supplementary topics, including a dedicated chapter on the physics of nanoscale devices, description of the SPICE models and equivalent circuits that are needed for circuit design, introductions to the most important specific devices (photonic devices, JFETs and MESFETs, negative-resistance diodes, and power devices), and an overview of integrated-circuit technologies. The chapters and the sections in each chapter are organized so as to enable instructors to select more rigorous and design-related topics as they see fit. New to this Edition * A new chapter on the physics of nanoscale devices * A revised chapter on the energy-band model and fully reworked and updated material on crystals to include graphene and carbon nanotubes * A revised P-N junction chapter to emphasize the current mechanisms that are relevant to modern devices * JFETs and MESFETs in a stand-alone chapter * Fifty-seven new problems and eleven new examples

It is well known that most important electronic devices use Schottky junctions and heterojunctions. Unfortunately there is not an advanced book introducing heterojunctions systematically. "Introduction to Organic Semiconductor Heterojunctions" fills the gap. In this book, the authors provide a comprehensive discussion and systematic introduction on the state-of-the-art technologies as well as application of organic semiconductor heterojunctions.

First book to systematically introduce organic heterojunctionsArms readers with theoretical, experimental and applied aspects of organic heterojunctionsThe Chinese edition of the book is part of the Chinese Academy of Sciences' Distinguished Young Scholar Scientific Book Series

"Introduction to Organic Semiconductor Heterojunctions" is an ideal and valued reference for researchers and graduate students focusing on organic thin film devices like organic light-emitting diodes (OLEDs), organic photovoltaic (OPV) cells, and organic field-effect transistors (OFETs). Instructors can use the book as a supplementary text for a semiconductor physics or organic electronics course, giving students a better feel for the application of organic thin film devices.

In this book we investigate mechanism of charge carrier transport in organic semiconductor thin film devices (OTFDs). Numerical models for the current conduction in single layer OTFDs including both injection and bulk effect for both trap free organics as well as organics with traps exponentially distributed in energy are developed. The dependencies of the current density on the operation voltage, the thickness of the organic layer and the trap properties are numerically studied.

Nanoscale materials are showing great promise in various optoelectronics applications, especially the fast-developing fields of optical communication and optical computers. With silicon as the leading material for microelectronics, the integration of optical functions into silicon technology is a very important challenge. This book concentrates on the optoelectronic properties of silicon nanocrystals, associated phenomena and related topics, from basic principles to the most recent discoveries. The areas of focus include silicon-based light-emitting devices, light modulators, optical wavevguides and interconnectors, optical amplifiers and memory elements. The book comprises theoretical and experimental analyses of various properties of silicon nanocrystals, research methods and preparation techniques, and some promising applications.

The book is devoted to theoretical investigations of interrelations in between morphology, single-electron spectrum, and optical properties of polycrystalline and spatially non-homogeneous amorphous semiconductors.

The superconductivity of MgB2 has been hidden for nearly 50 years although it has the highest Tc among the intermetallics superconductors. Beside the high Tc, simple crystal structure, large coherence length, high critical field, transparency of grain boundaries to current flow and low normal state resistivity MgB2 is a fascinating topic to study for both large scale application and electronic devices. Moreover, the presence of two-gap superconductivity (d and o band) has been theoretically and experimentally established. However, critical current density of pristine MgB2 drops rapidly in the high magnetic field due to the weak pinning centres and low upper critical field. During the past three years, novel techniques and developments for fabrication of useable MgB2 have been reported, including chemical alloying, irradiation, thermo-mechanical processing techniques and magnetic shielding to improve the critical density, upper critical field and the irreversibility field. Among the studies, atomic substitution, especially using nano-particles, may help in clarification of the superconductivity mechanism thus making it appropriate for practical application. On the other hand, the momentum of enhancing flux pinning using chemical doping is moving to a positive side. Nano-SiC powder is well known for effective improvement of the critical current density. In this book, a brief introduction of superconductivity in MgB2 is introduced. Further, the basic electronic and magnetic properties of the MgB2 as well as its crystal structure are reviewed. The authors also discuss the preparation method that has been well developed for experimentation on MgB2. Along with that, they review the experimental results of the chemical alloying on MgB2, particularly on the critical current density. In addition, the future prospects of MgB2 and developments for applications in the current superconductivity market are given.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. An understanding of such "strongly correlated" solids is perhaps the major unsolved problem of condensed matter physics with over ten thousand researchers working on this topic. High-Tc superconductors also have significant potential for applications in technologies ranging from electric power generation and transmission to digital electronics. This ability to carry large amounts of current can be applied to electric power devices such as motors and generators, and to electricity transmission in power lines. For example, superconductors can carry as much as 100 times the amount of electricity of ordinary copper or aluminium wires of the same size. Many universities, research institutes and companies are working to develop high-Tc superconductivity applications and considerable progress has been made. This volume brings together new leading-edge research in the field.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. This important book brings together leading research in this dynamic field.

Based on the latest progress in superconductivity research, the authors form a conventional theory of superconductivity and express BCS paring theory at a higher level. They especially emphasis the importance of the long-range phase coherence for the superconductivity. They also point out some misunderstandings of basic concepts about superconductivity in present textbooks and monographs. They illustrate the correct theory of the high-Tc superconductivity and the application of the high-Tc superconductors to establish a correct and detailed theory regarding this mechanism in different systems.

This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.

This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.

The Josephson Junction is a type of electronic circuit capable of switching at very high speeds when operated at temperatures approaching absolute zero. It exploits the phenomenon of superconductivity, the ability of certain materials to conduct electric current with practically zero resistance. This book presents new and important research in superconductivity. This includes optical properties, magneto-optics and surface acoustic waves, microwave responses, theories of superconductivity, synthesis in electronic applications and high temperature superconductivity.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. An understanding of such "strongly correlated" solids is perhaps the major unsolved problem of condensed matter physics with over ten thousand researchers working on this topic. High-Tc superconductors also have significant potential for applications in technologies ranging from electric power generation and transmission to digital electronics. This ability to carry large amounts of current can be applied to electric power devices such as motors and generators, and to electricity transmission in power lines. For example, superconductors can carry as much as 100 times the amount of electricity of ordinary copper or aluminium wires of the same size. Many universities, research institutes and companies are working to develop high-Tc superconductivity applications and considerable progress has been made. This volume brings together new leading-edge research in the field.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. An understanding of such "strongly correlated" solids is perhaps the major unsolved problem of condensed matter physics with over ten thousand researchers working on this topic. High-Tc superconductors also have significant potential for applications in technologies ranging from electric power generation and transmission to digital electronics. This ability to carry large amounts of current can be applied to electric power devices such as motors and generators, and to electricity transmission in power lines. For example, superconductors can carry as much as 100 times the amount of electricity of ordinary copper or aluminium wires of the same size. Many universities, research institutes and companies are working to develop high-Tc superconductivity applications and considerable progress has been made. This volume brings together new leading-edge research in the field.

This Golden Jubilee volume in the world's foremost series on superconductivity covers wide-ranging topics capturing the current excitement in the field. The broad areas include the advancement of high Tc theory, materials depicting unusual characteristics, materials' processing and defect structures for improved properties, their electromagnetic response, flux pinning, Josephson junctions and devices, and large scale applications.

Superconductivity is the ability of certain materials to conduct electrical current with no resistance and extremely low losses. High temperature superconductors, such as La2-xSrxCuOx (Tc=40K) and YBa2Cu3O7-x (Tc=90K), were discovered in 1987 and have been actively studied since. In spite of an intense, world-wide, research effort during this time, a complete understanding of the copper oxide (cuprate) materials is still lacking. Many fundamental questions are unanswered, particularly the mechanism by which high-Tc superconductivity occurs. More broadly, the cuprates are in a class of solids with strong electron-electron interactions. An understanding of such "strongly correlated" solids is perhaps the major unsolved problem of condensed matter physics with over ten thousand researchers working on this topic. High-Tc superconductors also have significant potential for applications in technologies ranging from electric power generation and transmission to digital electronics. This ability to carry large amounts of current can be applied to electric power devices such as motors and generators, and to electricity transmission in power lines. For example, superconductors can carry as much as 100 times the amount of electricity of ordinary copper or aluminium wires of the same size. Many universities, research institutes and companies are working to develop high-Tc superconductivity applications and considerable progress has been made. This volume brings together new leading-edge research in the field.

This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.