This book is devoted to the main aspects of the physics of recombination in semiconductors. It is the first book to deal exclusively and comprehensively with the subject, and as such is a self-contained volume, introducing the concepts and mechanisms of recombination from a fundamental point of view. Professor Landsberg is an internationally acknowledged expert in this field, and while not neglecting the occasional historical insights, he takes the reader to the frontiers of current research. Following initial chapters on semiconductor statistics and recombination statistics, the text moves on to examine the main recombination mechanisms: Auger effects, impact ionisation, radiative recombination, defect and multiphonon recombination. The final chapter deals with the topical subject of quantum wells and low-dimensional structures. Altogether the book covers a remarkably wide area of semiconductor physics. The book will be of importance to physicists, electronic engineers and applied mathematicians who are studying or researching the physics and applications of semiconductors. Some parts of the book will be accessible to final-year undergraduates.

Progress in nanoscale engineering, as well as an improved understanding of the physical phenomena at the nanometer scale, have contributed to the rapid development of novel nanostructured semiconducting materials and nanodevices. Using new approaches, semiconductor structures can be fabricated with sub-nanometer accuracy and precisely controlled electronic and optical properties. The immense technological potential and new exciting physics have stimulated interest in semiconductor nanostructures over several years. This book brings together a single comprehensive overview of recent progress and future directions in nanoscale semiconductor research. Fields ranging from materials science to physics, chemistry, electrical and microelectronic engineering, circuit design, and more, are represented. Topics include: quantum dot theory, growth and optics; single quantum dot spectroscopy; charge and spin; Si/Ge quantum dot structures; bio-quantum dots; electric force microscopy and charge injection; transport; Si nanocrystals and nc-Si superlattices; Si/Ge nanostructures; bioactive nanostructures; lithographic techniques and lateral nanopatterning; semiconductor nanowires and nanotubes; metallic and rare-earth-doped nanoparticles; theoretical studies and numerical simulations in Si/SiGe nanostructures and applications of Group IV nanoscale materials.

The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.

This book focuses on nanostructured semiconductors, their fabrication, and their application in various fields such as optics, acoustics, and biomedicine. It presents a compendium of recent developments in nanostructured and hybrid materials and also contains a collection of principles and approaches related to nano-size semiconductors. The text summarizes the recent work by renowned scientists, emphasizing the synthesis by self-assembly or prestructuring and characterization methods of such nanosize materials and also discusses the potential applications of nanostructured semiconductors and hybrid systems. The book also gives adequate coverage to the novel properties of nanostructured and low-dimensional materials.

Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and contamination issues. This book brings together many of the active players in the field to focus on the interdisciplinary nature of these challenges. It reflects, to some extent, the role played by both academic institutions and multinational corporations in opening up the frontiers in the field of CMP for wider dissemination. Both experimental and theoretical contributions are included. Topics include: overview and oxide polishing; pads and related issues; metal polishing - W and Al; copper polishing and related issues; CMP modeling and fluid flow; and particle adhesion and post-polish cleaning.

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

Thin-film solar cells potentially offer a suitable technology for solving the energy production problem with an environmentally friendly method. Additionally, thin film technologies show advantages over their bulk-semiconductor counterparts due to their lighter weight, flexible shape, device fabrication schemes and low cost in large-scale industrial production. This book provides an international perspective on the latest research in this rapidly expanding field, as well as presenting a wide range of scientific and technological aspects on thin film semiconductors, deposition technologies, basic properties and device physics of high-efficiency thin film solar cells.

This book from MRS dedicated to III-Nitrides, focuses on recent developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers ( 400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

This book introduces the reader to a number of challenges for the operation of electronic devices in various harsh environmental conditions. While some chapters focus on measuring and understanding the effects of these environments on electronic components, many also propose design solutions, whether in choice of material, innovative structures, or strategies for amelioration and repair. Many applications need electronics designed to operate in harsh environments. Readers will find, in this collection of topics, tools and ideas useful in their own pursuits and of interest to their intellectual curiosity. With a focus on radiation, operating conditions, sensor systems, package, and system design, the book is divided into three parts. The first part deals with sensing devices designed for operating in the presence of radiation, commercials of the shelf (COTS) products for space computing, and influences of single event upset. The second covers system and package design for harsh operating conditions. The third presents devices for biomedical applications under moisture and temperature loads in the frame of sensor systems and operating conditions.

Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.

Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.

This book presents a novel approach to the teaching of dynamic aspects of the operation of semiconductor and opto-electronic devices. Such dynamic aspects often determine the steady state conditions. Also, the dynamical operation of such devices is of increasing importance as modern methods of communicating data and information require electronic devices that switch electrical or optical signals at ever faster rates. The author discusses the rates at which electrons and holes can reach equilibrium, the rates at which transistors and diodes can switch, and the rates at which electrons and holes can interact with photons, and with protons. He also applies the rate equations in a unified way to models of light-emitting diodes, injection lasers and photodiodes. Finally, the author discusses more-advanced topics on the photon statistics of injection lasers, mode-locking and the application of rate equations and Maxwell's equations to opto-electronic devices.

This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si: H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.

Major advances have been made in the last 18 years in high-temperature superconductor (HTS) research and development, resulting in increased use of HTS materials in commercial and pre-commercial electric-power applications. This new and important book addresses the issues related to flux pinning, AC losses and thick YBCO film growth. Written by top most scientists in the world, it presents the current status and issues related to YBCO coated conductors and the need for further fundamental materials science work in YBCO coated conductor. This will be a useful handbook for years to come.

Dieses wichtige Referenzwerk behandelt die grundlegenden Konzepte der Photoleitfahigkeit und der photoleitenden Materialien. Mit Photoconductivity and Photoconductive Materials prasentiert Professor Kasap eine massgebliche Zusammenstellung der wesentlichen Grundsatze der Photoleitfahigkeit und stellt eine Auswahl aktueller photoleitfahiger Materialien vor. Der erste Band des zweibandigen Werks beginnt mit einer Darstellung der grundlegenden Konzepte und Definitionen. Es folgt eine Charakterisierung der verschiedenen Techniken auf Grundlage von stationarer, transienter und modulierter Photoleitfahigkeit, u.a. der neuen Methode der Ladungsextraktion durch linear steigende Spannung (CELIV). Auch die Physik der Terahertz-Photoleitfahigkeit sowie die Grundlagen der organischen Halbleiter LSoI werden behandelt. Der zweite Band beginnt mit einem umfassenden UEberblick uber eine Vielzahl unterschiedlicher photoleitfahiger Materialien, wobei der Schwerpunkt auf einige der wichtigsten Photoleiter gelegt wird, darunter hydriertes amorphes Silizium, Cadmium-Quecksilber-Tellurid, verschiedene Roentgenphotoleiter, Diamantfilme, Metallhalogenidperowskite, Nanodrahte und Quantenpunkte. Auch die Anwendungen der photoleitenden Antenne werden eroertert. Das Werk, das zahlreiche Beitrage fuhrender Autoren auf diesem Fachgebiet enthalt, bietet den Leserinnen und Lesern ausserdem: * Eine grundliche Einfuhrung in die Charakterisierung von Halbleitern mit Hilfe von Techniken der Photoleitfahigkeit, insbesondere gleichmassiger Beleuchtung und Phototrager-Gittertechniken * Eine umfassende Darstellung organischer Photoleiter mitsamt Informationen zu Photoerzeugung, Transport und Anwendungen im Druckbereich * Praktische Eroerterungen der transienten Lichtleitfahigkeit im Flugzeitverfahren inklusive Experimentiertechniken und Interpretationshinweisen * Eine eingehende Betrachtung der transienten Photoleitfahigkeit organischer Halbleiterschichten und neuartiger Techniken der transienten Photoleitfahigkeit Photoconductivity and Photoconductive Materials ist nicht nur ein wichtiges Referenzwerk fur Physiker in der Forschung, Materialwissenschaftler und Elektroingenieure, sondern auch ein unverzichtbares Nachschlagewerk fur Doktoranden und Studierende hoeherer Semester, die sich mit dem Bereich der optoelektronischen Materialien beschaftigen, sowie fur Forschende in der Industrie. * Ein umfassendes zweibandiges Werk mit Beitragen fuhrender Fachautoren, herausgegeben von einem angesehenen Forscher auf dem Gebiet der Photoleitfahigkeit

Using the simplest and most physically intuitive arguments and methods, Introduction to Superconductivity exposes not only graduate students but professionals in academe and industry to the breadth and richness of the phenomenon of superconductivity. Applications as well as fundamental principles are thoroughly covered. The author not only views superconductivity as a macroscopic quantum state, as described by the Ginzburg-Landau phenomenological equation, but also recognizes that the fundamental entity is the paired electrons of the microscopic theory of Bardeen-Cooper-Schrieffer. Special features include a treatment of varied phenomena in a simple way which keeps the microscopic theory of BCS in the background, and a thorough discussion of magnetic properties of type II superconductors, including dissipative effects and the use of twisted multifilamentary wires. After treating the fundamentals of the Josephson effects, an analysis is given of how the popular RF-biased SQUID magnetometer works. An extensive discussion of fluctuation effects is also included. Major changes in this new edition include the following: new chapter on high temperature superconductors; updated and expanded discussion of the Josephson effect; new chapter on the Josephson effect in mesoscopic junctions; new chapter on nonequilibrium superconductivity; introductory treatment of electrodynamics in London theory level; and the deemphasis of nonlocal electrodynamics. The level of treatment presumes a background in Solid State Physics and Basic Quantum Mechanics and avoids the use of Thermal Green's Functions.

"Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory". - Asher Peres Semiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels. Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.

Nanometre sized structures made of semiconductors, insulators, and metals and grown by modern growth technologies or by chemical synthesis exhibit novel electronic and optical phenomena due to the confinement of electrons and photons. Strong interactions between electrons and photons in narrow regions lead to inhibited spontaneous emission, thresholdless laser operation, and Bose-Einstein condensation of exciton-polaritons in microcavities. Generation of sub-wavelength radiation by surface plasmon-polaritons at metal-semiconductor interfaces, creation of photonic band gaps in dielectrics, and realization of nanometer sized semiconductor or insulator structures with negative permittivity and permeability, known as metamaterials, are further examples in the area of Nanophotonics. The studies help develop spasers and plasmonic nanolasers of subwavelength dimensions, paving the way to use plasmonics in future data centres and high-speed computers working at THz bandwidth with less than a few fJ/bit dissipation. The present book is aimed at graduate students and researchers providing them with an introductory textbook on Semiconductor Nanophotonics. It gives an introduction to electron-photon interactions in Quantum Wells, Wires, and Dots and then discusses the processes in microcavities, photonic band gap materials, metamaterials, and related applications. The phenomena and device applications under strong light-matter interactions are discussed, mostly by using classical and semi-classical theories. Numerous examples and problems accompany each chapter.

Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. Many books have taken on this task in the past, but their treatments tend either to pluck results from the literature and present them as received truths or to rely on unrealistically simple models. Bands and Photons in III-V Semiconductor Quantum Structures takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader would not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research in those fields. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader's understanding.

A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

In recent years, the physics community has experienced a revival of interest in spin effects in solid state systems. On one hand, the solid state systems, particularly, semiconductors and semiconductor nanosystems, allow us to perform benchtop studies of quantum and relativistic phenomena. On the other hand, this interest is supported by the prospects of realizing spin-based electronics, where the electron or nuclear spins may play a role of quantum or classical information carriers. This book looks in detail at the physics of interacting systems of electron and nuclear spins in semiconductors, with particular emphasis on low-dimensional structures. These two spin systems naturally appear in practically all widespread semiconductor compounds. The hyperfine interaction of the charge carriers and nuclear spins is particularly prominent in nanosystems due to the localization of the charge carriers, and gives rise to spin exchange between these two systems and a whole range of beautiful and complex physics of manybody and nonlinear systems. As a result, understanding of the intertwined spin systems of electrons and nuclei is crucial for in-depth studying and controlling the spin phenomena in semiconductors. The book addresses a number of the most prominent effects taking place in semiconductor nanosystems including hyperfine interaction, nuclear magnetic resonance, dynamical nuclear polarization, spin-Faraday and spin-Kerr effects, processes of electron spin decoherence and relaxation, effects of electron spin precession mode-locking and frequency focussing, as well as fluctuations of electron and nuclear spins.

What kind of information on the electrons' organisation in solids is yielded by measuring their thermoelectric response? Fundamentals of Thermoelectricity gives an account of our current understanding of thermoelectric phenomena in solids by presenting basic theoretical concepts and numerous experimental results. Many readers will be surprised to learn that even in the case of simple metals (considered to be domesticated long ago by the quantum theory of solids) our understanding lags far behind known experimental facts. The two theories of phonon drag, the positive Seebeck coefficient of noble metals, and the three-orders-of-magnitude gap between theory and experiment regarding the thermoelectric response of Bogoliubov quasi-particles of a superconductor are among the forgotten puzzles discussed in this book. Among other novelties, it contains an original discussion of the role of the de Broglie thermal wave-length in setting the magnitude of the thermoelectric response in Fermi liquids.