Starting in the 1950s, US physicists dominated the search for elementary particles; aided by the association of this research with national security, they held this position for decades. In an effort to maintain their hegemony and track down the elusive Higgs boson, they convinced President Reagan and Congress to support construction of the multibillion-dollar Superconducting Super Collider project in Texas--the largest basic-science project ever attempted. But after the Cold War ended and the estimated SSC cost surpassed ten billion dollars, Congress terminated the project in October 1993. Drawing on extensive archival research, contemporaneous press accounts, and over one hundred interviews with scientists, engineers, government officials, and others involved, Tunnel Visions tells the riveting story of the aborted SSC project. The authors examine the complex, interrelated causes for its demise, including problems of large-project management, continuing cost overruns, and lack of foreign contributions. In doing so, they ask whether Big Science has become too large and expensive, including whether academic scientists and their government overseers can effectively manage such an enormous undertaking.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Advanced Laser Diode Reliability focuses on causes and effects of degradations of state-of-the-art semiconductor laser diodes. It aims to provide a tool for linking practical measurements to physical diagnostics. To this purpose, it reviews the current technologies, addressing their peculiar details that can promote specific failure mechanisms. Two sections will support this kernel: a) Failure Analysis techniques, procedures and examples; b) Device-oriented laser modelling and parameter extraction.

Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume. Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors. Recent work on piezoelectric characterization, AFE to FE dielectric phase transformation dielectrics, solution and vapor deposited thin films, and materials integration are among the topics included. Novel approaches to nanostructuring, characterization of material properties and physical responses at the nanoscale also is included.

Revised and fully up-dated, the second edition of this graduate textbook offers a comprehensive explanation of the technology and physics of LEDs such as infrared, visible-spectrum, ultraviolet, and white LEDs made from III-V semiconductors. Elementary properties such as electrical and optical characteristics are reviewed, followed by the analysis of advanced device structures. With nine additional chapters, the treatment of LEDs has been vastly expanded, including new material on device packaging, reflectors, UV LEDs, III-V nitride materials, solid-state sources for illumination applications, and junction temperature. Radiative and non-radiative recombination dynamics, methods for improving light extraction, high-efficiency and high-power device designs, white-light emitters with wavelength-converting phosphor materials, optical reflectors, and spontaneous recombination in resonant-cavity structures are discussed in detail. With exercises, solutions, and illustrative examples, this textbook will be of interest to scientists and engineers working on LEDs and graduate students in electrical engineering, applied physics, and materials science.

This book is aimed at graduate students, post docs and senior researchers with preliminary expertise in materials physics or chemistry, and with an interest in the physical and chemical properties of 4d- and 5d transition metal oxides, especially ruthenates and iridates. The 4d- and 5d-transition metal oxides are among the most current and interesting quantum materials. This book reviews recent experimental and theoretical evidence that the physical and structural properties of these materials are decisively influenced by strong spin-orbit interactions that compete with comparable Coulomb, magnetic exchange and crystalline electric field interactions. This competition often leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel coupling between the orbital/lattice and spin degrees of freedom, which seriously challenge current theoretical models and are not addressed by traditional textbooks, are of particular interest, This book also reviews a few techniques for single-crystal growth that are most suitable for the 4d- and 5d-transition metal oxides. The discussion is intended to help fill an existing void in the literature describing relevant synthesis techniques for 4d- and 5d-materials, which is a daunting experimental challenge.

A practical, hands-on guidebook for the efficient modeling of VCSELs

Vertical Cavity Surface Emitting Lasers (VCSELs) are a unique type of semiconductor laser whose optical output is vertically emitted from the surface as opposed to conventional edge-emitting semiconductor lasers. Complex in design and expensive to produce, VCSELs nevertheless represent an already widely used laser technology that promises to have even more significant applications in the future. Although the research has accelerated, there have been relatively few books written on this important topic.

Analysis and Design of Vertical Cavity Surface Emitting Lasers seeks to encapsulate this growing body of knowledge into a single, comprehensive reference that will be of equal value for both professionals and academics in the field. The author, a recognized expert in the field of VCSELs, attempts to clarify often conflicting assumptions in order to help readers achieve the simplest and most efficient VCSEL models for any given problem.

Highlights of the text include:

• A clear and comprehensive theoretical treatment of VCSELs
• Detailed derivations for understanding the operational principles of VCSELs
• Mathematical models for the investigation of electrical, optical, and thermal properties of VCSELs
• Case studies on the mathematical modeling of VCSELs and the implementation of simulation programs

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

This "Third Edition" updates a landmark text with the latest findings

"The Third Edition" of the internationally lauded "Semiconductor Material and Device Characterization" brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the "Third Edition" set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.

"Semiconductor Material and Device Characterization" remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated "Third Edition," including: Updated and revised figures and examples reflecting the most current data and information260 new references offering access to the latest research and discussions in specialized topicsNew problems and review questions at the end of each chapter to test readers' understanding of the material

In addition, readers will find fully updated and revised sections in each chapter.

Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.

Written by an internationally recognized authority in the field, "Semiconductor Material and Device Characterization" remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.

An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

The first comprehensive guide to the chemicals and gases used in semiconductor manufacturing

The fabrication of semiconductor devices involves a series of complex chemical processes such as photolithography, etching, cleaning, thin film deposition, and polishing. Until now, there has been no convenient source of information on the properties, applications, and health and safety considerations of the chemicals used in these processes. The Handbook of Chemicals and Gases for the Semiconductor Industry meets this need.

Each of the Handbook’s eight chapters is related to a specific area of semiconductor processing. The authors provide a brief overview of each step in the process, followed by tables containing physical properties, handling, safety, and other pertinent information on chemicals and gases typically used in these processes. The 270 chemical and gas entries include data on physical properties, emergency treatment procedures, waste disposal, and incompatible materials, as well as descriptions of applications, chemical mechanisms involved, and references to the literature. Appendices cross-reference entries by process, chemical name, and CAS number. The Handbook’s eight chapters are:

• Thin Film Deposition Materials
• Water Cleaning Chemicals
• Photolithography Materials
• Wet and Dry Etching Materials
• Chemical Mechanical Planarizing Materials
• Carrier Gases
• Uncategorized Materials
• Semiconductor Chemicals Analysis

No other single source brings together these useful and important data on chemicals and gases used in the manufacture of semiconductor devices. The Handbook of Chemicals and Gases for the Semiconductor Industry will be a valuable reference for process engineers, scientists, suppliers to the semiconductor industry, microelectronics researchers, and students.

This book presents the conceptual framework underlying the atomistic theory of matter, emphasizing those aspects that relate to current flow. This includes some of the most advanced concepts of non-equilibrium quantum statistical mechanics. No prior acquaintance with quantum mechanics is assumed. Chapter 1 provides a description of quantum transport in elementary terms accessible to a beginner. The book then works its way from hydrogen to nanostructures, with extensive coverage of current flow. The final chapter summarizes the equations for quantum transport with illustrative examples showing how conductors evolve from the atomic to the ohmic regime as they get larger. Many numerical examples are used to provide concrete illustrations and the corresponding Matlab codes can be downloaded from the web. Videostreamed lectures, keyed to specific sections of the book, are also available through the web. This book is primarily aimed at senior and graduate students.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. * Developed from both a theoretical and experimental viewpoint * Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena * Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses * Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions

This book deals with the study of superconductivity in systems with coexisting wide and narrow bands. It has been previously suggested that superconductivity can be enhanced in systems with coexisting wide and narrow bands when the Fermi level is near the narrow band edge. In this book, the authors study two problems concerning this mechanism in order to: (a) provide a systematic understanding of the role of strong electron correlation effects, and (b) propose a realistic candidate material which meets the ideal criteria for high-Tc superconductivity. Regarding the role of strong correlation effects, the FLEX+DMFT method is adopted. Based on systematic calculations, the pairing mechanism is found to be indeed valid even when the strong correlation effect is considered within the formalism. In the second half of the book, the authors propose a feasible candidate material by introducing the concept of the "hidden ladder" electronic structure, arising from the combination of the bilayer lattice structure and the anisotropic orbitals of the electrons. As such, the book contributes a valuable theoretical guiding principle for seeking unknown high-Tc superconductors.

This thesis extends our understanding of systems of independent electrons by developing a generalization of Bloch's Theorem which is applicable whenever translational symmetry is broken solely due to arbitrary boundary conditions. The thesis begins with a historical overview of topological condensed matter physics, placing the work in context, before introducing the generalized form of Bloch's Theorem. A cornerstone of electronic band structure and transport theory in crystalline matter, Bloch's Theorem is generalized via a reformulation of the diagonalization problem in terms of corner-modified block-Toeplitz matrices and, physically, by allowing the crystal momentum to take complex values. This formulation provides exact expressions for all the energy eigenvalues and eigenstates of the single-particle Hamiltonian. By precisely capturing the interplay between bulk and boundary properties, this affords an exact analysis of several prototypical models relevant to symmetry-protected topological phases of matter, including a characterization of zero-energy localized boundary excitations in both topological insulators and superconductors. Notably, in combination with suitable matrix factorization techniques, the generalized Bloch Hamiltonian is also shown to provide a natural starting point for a unified derivation of bulk-boundary correspondence for all symmetry classes in one dimension.

"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications."
-Ron Wilson, EETimes

"SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it."
-Alberto Sangiovanni-Vincentelli
Professor, University of California, Berkeley
Cofounder, Chief Technology Officer, Member of Board
Cadence Design Systems Inc.

Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to:

• Detail many of IBM's SiGe technology development programs
• Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling
• Discuss IBM's design automation and signal integrity knowledge and implementation methodologies
• Illustrate design applications in a variety of IBM's SiGe technologies
• Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design

Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe processtechnologies and design kits.

"This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development."
-Ron Wilson
Silicon Engineering Editor, EETimes

"This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods."
-John Kelly
Senior Vice President and Group Executive, Technology Group, IBM

This thesis presents analytical theoretical studies on the interplay between charge density waves (CDW) and superconductivity (SC) in the actively studied transition-metal dichalcogenide 1T-TiSe2. It begins by reapproaching a years-long debate over the nature of the phase transition to the commensurate CDW (CCDW) state and the role played by the intrinsic tendency towards excitonic condensation in this system. A Ginzburg-Landau phenomenological theory was subsequently developed to understand the experimentally observed transition from commensurate to incommensurate CDW (ICDW) order with doping or pressure, and the emergence of a superconducting dome that coexists with ICDW. Finally, to characterize microscopically the effects of the interplay between CDW and SC, the spectrum of CDW fluctuations beyond mean-field was studied in detail. In the aggregate, the work reported here provides an encompassing understanding of what are possibly key microscopic underpinnings of the CDW and SC physics in TiSe2.

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

The work described in this PhD thesis is a study of a real implementation of a track-finder system which could provide reconstructed high transverse momentum tracks to the first-level trigger of the High Luminosity LHC upgrade of the CMS experiment. This is vital for the future success of CMS, since otherwise it will be impossible to achieve the trigger selectivity needed to contain the very high event rates. The unique and extremely challenging requirement of the system is to utilise the enormous volume of tracker data within a few microseconds to arrive at a trigger decision. The track-finder demonstrator described proved unequivocally, using existing hardware, that a real-time track-finder could be built using present-generation FPGA-based technology which would meet the latency and performance requirements of the future tracker. This means that more advanced hardware customised for the new CMS tracker should be even more capable, and will deliver very significant gains for the future physics returns from the LHC.

This book offers a concise primer on energy conversion efficiency and the Shockley-Queisser limit in single p-n junction solar cells. It covers all the important fundamental physics necessary to understand the conversion efficiency, which is indispensable in studying, investigating, analyzing, and designing solar cells in practice. As such it is valuable as a supplementary text for courses on photovoltaics, and bridges the gap between advanced topics in solar cell device engineering and the fundamental physics covered in undergraduate courses. The book first introduces the principles and features of solar cells compared to those of chemical batteries, and reviews photons, statistics and radiation as the physics of the source energy. Based on these foundations, it clarifies the conversion efficiency of a single p-n junction solar cell and discusses the Shockley-Queisser limit. Furthermore, it looks into various concepts of solar cells for breaking through the efficiency limit given in the single junction solar cell and presents feasible theoretical predictions. To round out readers' knowledge of p-n junctions, the final chapter also reviews the essential semiconductor physics. The foundation of solar cell physics and engineering provided here is a valuable resource for readers with no background in solar cells, such as upper undergraduate and master students. At the same time, the deep insights provided allow readers to step seamlessly into other advanced books and their own research topics.

This book includes selected, peer-reviewed contributions from the 2018 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2018, held in Busan, South Korea, 9-11 August 2018. Focusing on manufacturing techniques, physics, mechanics, and applications of modern materials with special properties, it covers a broad spectrum of nanomaterials and structures, ferroelectrics and ferromagnetics, and other advanced materials and composites. The authors discuss approaches and methods in nanotechnology; newly developed, environmentally friendly piezoelectric techniques; and physical and mechanical studies of the microstructural and other properties of materials. Further, the book presents a range of original theoretical, experimental and computational methods and their application in the solution of various technological, mechanical and physical problems. Moreover, it highlights modern devices demonstrating high accuracy, longevity and the ability to operate over wide temperature and pressure ranges or in aggressive media. The developed devices show improved characteristics due to the use of advanced materials and composites, opening new horizons in the investigation of a variety of physical and mechanical processes and phenomena.