This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

The work described in this PhD thesis is a study of a real implementation of a track-finder system which could provide reconstructed high transverse momentum tracks to the first-level trigger of the High Luminosity LHC upgrade of the CMS experiment. This is vital for the future success of CMS, since otherwise it will be impossible to achieve the trigger selectivity needed to contain the very high event rates. The unique and extremely challenging requirement of the system is to utilise the enormous volume of tracker data within a few microseconds to arrive at a trigger decision. The track-finder demonstrator described proved unequivocally, using existing hardware, that a real-time track-finder could be built using present-generation FPGA-based technology which would meet the latency and performance requirements of the future tracker. This means that more advanced hardware customised for the new CMS tracker should be even more capable, and will deliver very significant gains for the future physics returns from the LHC.

This thesis presents analytical theoretical studies on the interplay between charge density waves (CDW) and superconductivity (SC) in the actively studied transition-metal dichalcogenide 1T-TiSe2. It begins by reapproaching a years-long debate over the nature of the phase transition to the commensurate CDW (CCDW) state and the role played by the intrinsic tendency towards excitonic condensation in this system. A Ginzburg-Landau phenomenological theory was subsequently developed to understand the experimentally observed transition from commensurate to incommensurate CDW (ICDW) order with doping or pressure, and the emergence of a superconducting dome that coexists with ICDW. Finally, to characterize microscopically the effects of the interplay between CDW and SC, the spectrum of CDW fluctuations beyond mean-field was studied in detail. In the aggregate, the work reported here provides an encompassing understanding of what are possibly key microscopic underpinnings of the CDW and SC physics in TiSe2.

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

A practical, hands-on guidebook for the efficient modeling of VCSELs

Vertical Cavity Surface Emitting Lasers (VCSELs) are a unique type of semiconductor laser whose optical output is vertically emitted from the surface as opposed to conventional edge-emitting semiconductor lasers. Complex in design and expensive to produce, VCSELs nevertheless represent an already widely used laser technology that promises to have even more significant applications in the future. Although the research has accelerated, there have been relatively few books written on this important topic.

Analysis and Design of Vertical Cavity Surface Emitting Lasers seeks to encapsulate this growing body of knowledge into a single, comprehensive reference that will be of equal value for both professionals and academics in the field. The author, a recognized expert in the field of VCSELs, attempts to clarify often conflicting assumptions in order to help readers achieve the simplest and most efficient VCSEL models for any given problem.

Highlights of the text include:

• A clear and comprehensive theoretical treatment of VCSELs
• Detailed derivations for understanding the operational principles of VCSELs
• Mathematical models for the investigation of electrical, optical, and thermal properties of VCSELs
• Case studies on the mathematical modeling of VCSELs and the implementation of simulation programs

This book offers a concise primer on energy conversion efficiency and the Shockley-Queisser limit in single p-n junction solar cells. It covers all the important fundamental physics necessary to understand the conversion efficiency, which is indispensable in studying, investigating, analyzing, and designing solar cells in practice. As such it is valuable as a supplementary text for courses on photovoltaics, and bridges the gap between advanced topics in solar cell device engineering and the fundamental physics covered in undergraduate courses. The book first introduces the principles and features of solar cells compared to those of chemical batteries, and reviews photons, statistics and radiation as the physics of the source energy. Based on these foundations, it clarifies the conversion efficiency of a single p-n junction solar cell and discusses the Shockley-Queisser limit. Furthermore, it looks into various concepts of solar cells for breaking through the efficiency limit given in the single junction solar cell and presents feasible theoretical predictions. To round out readers' knowledge of p-n junctions, the final chapter also reviews the essential semiconductor physics. The foundation of solar cell physics and engineering provided here is a valuable resource for readers with no background in solar cells, such as upper undergraduate and master students. At the same time, the deep insights provided allow readers to step seamlessly into other advanced books and their own research topics.

This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.

This thesis deals with topological orders from two different perspectives: from a condensed matter point of view, where topological orders are considered as breakthrough phases of matter; and from the emerging realm of quantum computation, where topological quantum codes are considered the most appealing platform against decoherence. The thesis reports remarkable studies from both sides. It thoroughly investigates a topological order called the double semion model, a counterpart of the Kitaev model but exhibiting richer quasiparticles as excitations. A new model for symmetry enriched topological order is constructed, which adds an onsite global symmetry to the double semion model. Using this topological phase, a new example of topological code is developed, the semion code, which is non-CSS, additive, non-Pauli and within the stabiliser formalism. Furthermore, the thesis analyses the Rashba spin-orbit coupling within topological insulators, turning the helical edge states into generic edges modes with potential application in spinstronics. New types of topological superconductors are proposed and the novel properties of the correspondingly created Majorana fermions are investigated. These Majorana fermions have inherent properties enabling braiding and the performance of logical gates as fundamental blocks for a universsal quantum computator.

This book includes selected, peer-reviewed contributions from the 2018 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2018, held in Busan, South Korea, 9-11 August 2018. Focusing on manufacturing techniques, physics, mechanics, and applications of modern materials with special properties, it covers a broad spectrum of nanomaterials and structures, ferroelectrics and ferromagnetics, and other advanced materials and composites. The authors discuss approaches and methods in nanotechnology; newly developed, environmentally friendly piezoelectric techniques; and physical and mechanical studies of the microstructural and other properties of materials. Further, the book presents a range of original theoretical, experimental and computational methods and their application in the solution of various technological, mechanical and physical problems. Moreover, it highlights modern devices demonstrating high accuracy, longevity and the ability to operate over wide temperature and pressure ranges or in aggressive media. The developed devices show improved characteristics due to the use of advanced materials and composites, opening new horizons in the investigation of a variety of physical and mechanical processes and phenomena.

Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. * Developed from both a theoretical and experimental viewpoint * Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena * Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses * Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions

A new experimental method - the "Stiffnessometer", is developed to measure elementary properties of a superconductor, including the superconducting stiffness and the critical current. This technique has many advantages over existing methods, such as: the ability to measure these properties while minimally disturbing the system; the ability to measure large penetration depths (comparable to sample size), as necessary when approaching the critical temperature; and the ability to measure critical currents without attaching contacts and heating the sample. The power of this method is demonstrated in a study of the penetration depth of LSCO, where striking evidence is found for two separate critical temperatures for the in-plane and out-of-plane directions. The results in the thesis are novel, important and currently have no theoretical explanation. The stiffnessometer in a tool with great potential to explore new grounds in condensed matter physics.

This book presents the first experiment revealing several unexplored non-equilibrium properties of quantum many-body states, and addresses the interplay between the Kondo effect and superconductivity by probing shot noise. In addition, it describes in detail nano-fabrication techniques for carbon nanotube quantum dots, and a measurement protocol and principle that probes both equilibrium and non-equilibrium quantum states of electrons. The book offers various reviews of topics in mesoscopic systems: shot noise measurement, carbon nanotube quantum dots, the Kondo effect in quantum dots, and quantum dots with superconducting leads, which are relevant to probing non-equilibrium physics. These reviews offer particularly valuable resources for readers interested in non-equilibrium physics in mesoscopic systems. Further, the cutting-edge experimental results presented will allow reader to catch up on a vital new trend in the field.

The first comprehensive guide to the chemicals and gases used in semiconductor manufacturing

The fabrication of semiconductor devices involves a series of complex chemical processes such as photolithography, etching, cleaning, thin film deposition, and polishing. Until now, there has been no convenient source of information on the properties, applications, and health and safety considerations of the chemicals used in these processes. The Handbook of Chemicals and Gases for the Semiconductor Industry meets this need.

Each of the Handbook’s eight chapters is related to a specific area of semiconductor processing. The authors provide a brief overview of each step in the process, followed by tables containing physical properties, handling, safety, and other pertinent information on chemicals and gases typically used in these processes. The 270 chemical and gas entries include data on physical properties, emergency treatment procedures, waste disposal, and incompatible materials, as well as descriptions of applications, chemical mechanisms involved, and references to the literature. Appendices cross-reference entries by process, chemical name, and CAS number. The Handbook’s eight chapters are:

• Thin Film Deposition Materials
• Water Cleaning Chemicals
• Photolithography Materials
• Wet and Dry Etching Materials
• Chemical Mechanical Planarizing Materials
• Carrier Gases
• Uncategorized Materials
• Semiconductor Chemicals Analysis

No other single source brings together these useful and important data on chemicals and gases used in the manufacture of semiconductor devices. The Handbook of Chemicals and Gases for the Semiconductor Industry will be a valuable reference for process engineers, scientists, suppliers to the semiconductor industry, microelectronics researchers, and students.

Starting in the 1950s, US physicists dominated the search for elementary particles; aided by the association of this research with national security, they held this position for decades. In an effort to maintain their hegemony and track down the elusive Higgs boson, they convinced President Reagan and Congress to support construction of the multibillion-dollar Superconducting Super Collider project in Texas--the largest basic-science project ever attempted. But after the Cold War ended and the estimated SSC cost surpassed ten billion dollars, Congress terminated the project in October 1993. Drawing on extensive archival research, contemporaneous press accounts, and over one hundred interviews with scientists, engineers, government officials, and others involved, Tunnel Visions tells the riveting story of the aborted SSC project. The authors examine the complex, interrelated causes for its demise, including problems of large-project management, continuing cost overruns, and lack of foreign contributions. In doing so, they ask whether Big Science has become too large and expensive, including whether academic scientists and their government overseers can effectively manage such an enormous undertaking.

This "Third Edition" updates a landmark text with the latest findings

"The Third Edition" of the internationally lauded "Semiconductor Material and Device Characterization" brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the "Third Edition" set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.

"Semiconductor Material and Device Characterization" remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated "Third Edition," including: Updated and revised figures and examples reflecting the most current data and information260 new references offering access to the latest research and discussions in specialized topicsNew problems and review questions at the end of each chapter to test readers' understanding of the material

In addition, readers will find fully updated and revised sections in each chapter.

Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.

Written by an internationally recognized authority in the field, "Semiconductor Material and Device Characterization" remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.

An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

This book is aimed at graduate students, post docs and senior researchers with preliminary expertise in materials physics or chemistry, and with an interest in the physical and chemical properties of 4d- and 5d transition metal oxides, especially ruthenates and iridates. The 4d- and 5d-transition metal oxides are among the most current and interesting quantum materials. This book reviews recent experimental and theoretical evidence that the physical and structural properties of these materials are decisively influenced by strong spin-orbit interactions that compete with comparable Coulomb, magnetic exchange and crystalline electric field interactions. This competition often leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel coupling between the orbital/lattice and spin degrees of freedom, which seriously challenge current theoretical models and are not addressed by traditional textbooks, are of particular interest, This book also reviews a few techniques for single-crystal growth that are most suitable for the 4d- and 5d-transition metal oxides. The discussion is intended to help fill an existing void in the literature describing relevant synthesis techniques for 4d- and 5d-materials, which is a daunting experimental challenge.

This thesis extends our understanding of systems of independent electrons by developing a generalization of Bloch's Theorem which is applicable whenever translational symmetry is broken solely due to arbitrary boundary conditions. The thesis begins with a historical overview of topological condensed matter physics, placing the work in context, before introducing the generalized form of Bloch's Theorem. A cornerstone of electronic band structure and transport theory in crystalline matter, Bloch's Theorem is generalized via a reformulation of the diagonalization problem in terms of corner-modified block-Toeplitz matrices and, physically, by allowing the crystal momentum to take complex values. This formulation provides exact expressions for all the energy eigenvalues and eigenstates of the single-particle Hamiltonian. By precisely capturing the interplay between bulk and boundary properties, this affords an exact analysis of several prototypical models relevant to symmetry-protected topological phases of matter, including a characterization of zero-energy localized boundary excitations in both topological insulators and superconductors. Notably, in combination with suitable matrix factorization techniques, the generalized Bloch Hamiltonian is also shown to provide a natural starting point for a unified derivation of bulk-boundary correspondence for all symmetry classes in one dimension.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

This thesis devotes three introductory chapters to outlining basic recipes for constructing the quantum Hamiltonian of an arbitrary superconducting circuit, starting from classical circuit design. Since a superconducting circuit is one of the most promising platforms for realizing a practical quantum computer, anyone who is starting out in the field will benefit greatly from this introduction. The second focus of the introduction is the ultrastrong light-matter interaction (USC), where the latest developments are described. This is followed by three main research works comprising quantum memory in USC; scaling up the 1D circuit to a 2D lattice configuration; creation of Noisy Intermediate-Scale Quantum era quantum error correction codes and polariton-mediated qubit-qubit interaction. The research work detailed in this thesis will make a major contribution to the development of quantum random access memory, a prerequisite for various quantum machine learning algorithms and applications.

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

This concise volume provides an introduction to the working principles, design, and construction of air-stable inverted organic light-emitting diodes (OLEDs), which lead to the realization of practical flexible electronics. The first part of the book reviews the history of the three generations of inverted OLEDs: hybrid organic inorganic light-emitting diodes (HOILEDs), metal oxides and organic electron injection layer, describing the materials, fabrication techniques, device structure, applications, and technological challenges involved in each case. The second part of the book focuses on the carrier injection mechanism in OLEDs. The book will be of interest to students and researchers working on organic optoelectronics.

This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author's work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of "epi-grade" 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore's law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.

This monograph presents an intuitive theory of trial wave functions for strongly interacting fermions in fractional quantum Hall states. The correlation functions for the proposed fermion interactions follow a novel algebraic approach that harnesses the classical theory of invariants and semi-invariants of binary forms. This approach can be viewed as a fitting and far-reaching generalization of Laughlin's approach to trial wave functions. Aesthetically viewed, it illustrates an attractive symbiosis between the theory of invariants and the theory of correlations. Early research into numerical diagonalization computations for small numbers of electrons shows strong agreement with the constructed trial wave functions.The monograph offers researchers and students of condensed matter physics an accessible discussion of this interesting area of research.

This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique approach of starting with the statistical mechanics of quantum ideal gases and successively adding and clarifying elements and techniques indispensible for understanding it. They include the spin-statistics theorem, second quantization, density matrices, the Bloch-De Dominicis theorem, the variational principle in statistical mechanics, attractive interaction and bound states. Ample examples of their usage are also provided in terms of topics from advanced statistical mechanics such as two-particle correlations of quantum ideal gases, derivation of the Hartree-Fock equations, and Landau's Fermi-liquid theory, among others. With these preliminaries, the fundamental mean-field equations of superconductivity are derived with maximum mathematical clarity based on a coherent state in terms of the Cooper-pair creation operator, a quasiparticle field for describing the excitation and the variational principle in statistical mechanics. They have the advantage that the phase coherence due to the Cooper-pair condensation can be clearly seen making the superfluidity comprehensible naturally. Subsequently, they are applied to homogeneous cases to describe the BCS theory for classic s-wave superconductors and its extension to the p-wave superfluidity of 3He. Later, the mean-field equations are simplified to the Eilenberger and Ginzburg-Landau equations so as to describe inhomogeneous superconductivity such as Abrikosov's flux-line lattice concisely and transparently. Chapters provide the latest studies on the quasiclassical theory of superconductivity and a discovery of p-wave superfluidity in liquid 3He. The book serves as a standard reference for advanced courses of statistical mechanics with exercises along with detailed answers.

This book offers an overview of power electronic applications in the study of power integrated circuit (IC) design, collecting novel research ideas and insights into fast transient response to prevent the output voltage from dropping significantly at the undershoot. It also discusses techniques and training to save energy and increase load efficiency, as well as fast transient response and high efficiency, which are the most important factors for consumer products that implement power IC. Lastly, the book focuses on power electronics for system loop analysis and optimal compensation design to help users and engineers implement their applications. The book is a valuable resource for university researchers, power IC R&D engineers, application engineers and graduate students in power electronics who wish to learn about the power IC design principles, methods, system behavior, and applications in consumer products.