The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

The Acclaimed RF Microelectronics Best-Seller, Expanded and Updated for the Newest Architectures, Circuits, and Devices Wireless communication has become almost as ubiquitous as electricity, but RF design continues to challenge engineers and researchers. In the 15 years since the first edition of this classic text, the demand for higher performance has led to an explosive growth of RF design techniques. In RF Microelectronics, Second Edition, Behzad Razavi systematically teaches the fundamentals as well as the state-of-the-art developments in the analysis and design of RF circuits and transceivers. Razavi has written the second edition to reflect today's RF microelectronics, covering key topics in far greater detail. At nearly three times the length of the first edition, the second edition is an indispensable tome for both students and practicing engineers. With his lucid prose, Razavi now Offers a stronger tutorial focus along with hundreds of examples and problems Teaches design as well as analysis with the aid of step-by-step design procedures and a chapter dedicated to the design of a dual-band WiFi transceiver Describes new design paradigms and analysis techniques for circuits such as low-noise amplifiers, mixers, oscillators, and frequency dividers This edition's extensive coverage includes brand new chapters on mixers, passive devices, integer-N synthesizers, and fractional-N synthesizers. Razavi's teachings culminate in a new chapter that begins with WiFi's radio specifications and, step by step, designs the transceiver at the transistor level. Coverage includes Core RF principles, including noise and nonlinearity, with ties to analog design, microwave theory, and communication systems An intuitive treatment of modulation theory and wireless standards from the standpoint of the RF IC designer Transceiver architectures such as heterodyne, sliding-IF, directconversion, image-reject, and low-IF topologies. Low-noise amplifiers, including cascode common-gate and commonsource topologies, noise-cancelling schemes, and reactance-cancelling configurations Passive and active mixers, including their gain and noise analysis and new mixer topologies Voltage-controlled oscillators, phase noise mechanisms, and various VCO topologies dealing with noisepower-tuning trade-offs All-new coverage of passive devices, such as integrated inductors, MOS varactors, and transformers A chapter on the analysis and design of phase-locked loops with emphasis on low phase noise and low spur levels Two chapters on integer-N and fractional-N synthesizers, including the design of frequency dividers Power amplifier principles and circuit topologies along with transmitter architectures, such as polar modulation and outphasing

This accessible textbook offers a novel, concept-led approach to superconducting electronics, using the COMSOL Multiphysics software to help describe fundamental principles in an intuitive manner. Based on a course taught by the author and aimed primarily at engineering students, the book explains concepts effectively and efficiently, uncovering the "shortcut" to understanding each topic, enabling readers to quickly grasp the underlying essence. The book is divided into two main parts; the first part provides a general introduction to key topics encountered in superconductivity, illustrated using COMSOL simulations based on time-dependent Ginzburg-Landau equations and avoiding any deeply mathematical derivations. It includes numerous worked examples and problem sets with tips and solutions. The second part of the book is more conventional in nature, providing detailed derivations of the basic equations from first principles. This part covers more advanced topics, including the BCS-Gor'kov-Eliashberg approach to equilibrium properties of superconductors, the derivation of kinetic equations for nonequilibrium superconductors, and the derivation of time-dependent Ginzburg-Landau equations, used as the basis for COMSOL modeling in the first part. Supported throughout by an extensive library of COMSOL Multiphysics animations, the book serves as a uniquely accessible introduction to the field for engineers and others with a less rigorous background in physics and mathematics. However, it also features more detailed mathematical background for those wishing to delve further into the subject.

This book is a very comprehensive textbook covering in great depth all the electricity and magnetism. The 2nd edition includes new and revised figures and exercises in many of the chapters, and the number of problems and exercises for the student is increased. In the 1st edition, emphasis much was made of superconductivity, and this methodology will be continued in the new edition by strengthening of the E-B analogy. Many of the new exercises and problems are associated with the E-B analogy, which enables those teaching from the book to select suitable teaching methods depending on the student's ability and courses taken, whether physics, astrophysics, or engineering. Changes in the chapters include a detailed discussion of the equivector-potential surface and its correspondence between electricity and magnetism. The shortcomings of using the magnetic scalar potential are also explained. The zero resistivity in a magnetic material showing perfect diamagnetism can be easily proved. This textbook is an ideal text for students, who are competent in calculus and are taking physics, astrophysics, or engineering at degree level. It is also useful as a reference book for the professional scientist.

This book offers a primer on the fundamental theory of Andreev reflection, a fundamental process in the motion of a Cooper pair, which dominates low-energy electronic transport properties in superconductor junctions including differential conductance and Josephson current. The book concisely describes how Andreev reflection impacts the low-energy physics of electronic transport especially in topologically non-trivial superconductor junctions. In addition, it includes an introduction to topological superconductors, covering topological classification, chiral and helical superconductors, and topological edges. The book is based on the author's lecture notes, used in his intensive lectures and while supervising his upper undergraduate and early graduate students. To fully benefit from this concise primer, readers only need an undergraduate background in quantum mechanics and statistical mechanics. Further, by highlighting Josephson junctions of topological superconductors, the book offers readers a glimpse into cutting-edge topics.

This book is primarily designed to serve as a textbook for undergraduate students of electrical, electronics, and computer engineering, but can also be used for primer courses across other disciplines of engineering and related sciences. The book covers all the basic aspects of electronics engineering, from electronic materials to devices, and then to basic electronic circuits. The book can be used for freshman (first year) and sophomore (second year) courses in undergraduate engineering. It can also be used as a supplement or primer for more advanced courses in electronic circuit design. The book uses a simple narrative style, thus simplifying both classroom use and self study. Numerical values of dimensions of the devices, as well as of data in figures and graphs have been provided to give a real world feel to the device parameters. It includes a large number of numerical problems and solved examples, to enable students to practice. A laboratory manual is included as a supplement with the textbook material for practicals related to the coursework. The contents of this book will be useful also for students and enthusiasts interested in learning about basic electronics without the benefit of formal coursework.

This book presents a sequential representation of the electrodynamics of conducting media with dispersion. In addition to the general electrodynamic formalism, specific media such as classical nondegenerate plasma, degenerate metal plasma, magnetoactive anisotropic plasma, atomic hydrogen gas, semiconductors, and molecular crystals are considered. The book draws on such classics as Electrodynamics of plasma and plasma-like media (Silin and Rukhadze) and Principles of Plasma Electrodynamics (Alexandrov, Bogdankevich, and Rukhadze), yet its outlook is thoroughly modern-both in content and presentation, including both classical and quantum approaches. It explores such recent topics as surface waves on thin layers of plasma and non-dispersive media, the permittivity of a monatomic gas with spatial dispersion, and current-driven instabilities in plasma, among many others. Each chapter is equipped with a large number of problems with solutions that have academic and practical importance. This book will appeal to graduate students as well as researchers and other professionals due to its straight-forward yet thorough treatment of electrodynamics in conducting dispersive media.

This book deals with the study of superconductivity in systems with coexisting wide and narrow bands. It has been previously suggested that superconductivity can be enhanced in systems with coexisting wide and narrow bands when the Fermi level is near the narrow band edge. In this book, the authors study two problems concerning this mechanism in order to: (a) provide a systematic understanding of the role of strong electron correlation effects, and (b) propose a realistic candidate material which meets the ideal criteria for high-Tc superconductivity. Regarding the role of strong correlation effects, the FLEX+DMFT method is adopted. Based on systematic calculations, the pairing mechanism is found to be indeed valid even when the strong correlation effect is considered within the formalism. In the second half of the book, the authors propose a feasible candidate material by introducing the concept of the "hidden ladder" electronic structure, arising from the combination of the bilayer lattice structure and the anisotropic orbitals of the electrons. As such, the book contributes a valuable theoretical guiding principle for seeking unknown high-Tc superconductors.

This thesis extends our understanding of systems of independent electrons by developing a generalization of Bloch's Theorem which is applicable whenever translational symmetry is broken solely due to arbitrary boundary conditions. The thesis begins with a historical overview of topological condensed matter physics, placing the work in context, before introducing the generalized form of Bloch's Theorem. A cornerstone of electronic band structure and transport theory in crystalline matter, Bloch's Theorem is generalized via a reformulation of the diagonalization problem in terms of corner-modified block-Toeplitz matrices and, physically, by allowing the crystal momentum to take complex values. This formulation provides exact expressions for all the energy eigenvalues and eigenstates of the single-particle Hamiltonian. By precisely capturing the interplay between bulk and boundary properties, this affords an exact analysis of several prototypical models relevant to symmetry-protected topological phases of matter, including a characterization of zero-energy localized boundary excitations in both topological insulators and superconductors. Notably, in combination with suitable matrix factorization techniques, the generalized Bloch Hamiltonian is also shown to provide a natural starting point for a unified derivation of bulk-boundary correspondence for all symmetry classes in one dimension.

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

This thesis presents analytical theoretical studies on the interplay between charge density waves (CDW) and superconductivity (SC) in the actively studied transition-metal dichalcogenide 1T-TiSe2. It begins by reapproaching a years-long debate over the nature of the phase transition to the commensurate CDW (CCDW) state and the role played by the intrinsic tendency towards excitonic condensation in this system. A Ginzburg-Landau phenomenological theory was subsequently developed to understand the experimentally observed transition from commensurate to incommensurate CDW (ICDW) order with doping or pressure, and the emergence of a superconducting dome that coexists with ICDW. Finally, to characterize microscopically the effects of the interplay between CDW and SC, the spectrum of CDW fluctuations beyond mean-field was studied in detail. In the aggregate, the work reported here provides an encompassing understanding of what are possibly key microscopic underpinnings of the CDW and SC physics in TiSe2.

A practical, hands-on guidebook for the efficient modeling of VCSELs

Vertical Cavity Surface Emitting Lasers (VCSELs) are a unique type of semiconductor laser whose optical output is vertically emitted from the surface as opposed to conventional edge-emitting semiconductor lasers. Complex in design and expensive to produce, VCSELs nevertheless represent an already widely used laser technology that promises to have even more significant applications in the future. Although the research has accelerated, there have been relatively few books written on this important topic.

Analysis and Design of Vertical Cavity Surface Emitting Lasers seeks to encapsulate this growing body of knowledge into a single, comprehensive reference that will be of equal value for both professionals and academics in the field. The author, a recognized expert in the field of VCSELs, attempts to clarify often conflicting assumptions in order to help readers achieve the simplest and most efficient VCSEL models for any given problem.

Highlights of the text include:

• A clear and comprehensive theoretical treatment of VCSELs
• Detailed derivations for understanding the operational principles of VCSELs
• Mathematical models for the investigation of electrical, optical, and thermal properties of VCSELs
• Case studies on the mathematical modeling of VCSELs and the implementation of simulation programs

The work described in this PhD thesis is a study of a real implementation of a track-finder system which could provide reconstructed high transverse momentum tracks to the first-level trigger of the High Luminosity LHC upgrade of the CMS experiment. This is vital for the future success of CMS, since otherwise it will be impossible to achieve the trigger selectivity needed to contain the very high event rates. The unique and extremely challenging requirement of the system is to utilise the enormous volume of tracker data within a few microseconds to arrive at a trigger decision. The track-finder demonstrator described proved unequivocally, using existing hardware, that a real-time track-finder could be built using present-generation FPGA-based technology which would meet the latency and performance requirements of the future tracker. This means that more advanced hardware customised for the new CMS tracker should be even more capable, and will deliver very significant gains for the future physics returns from the LHC.

This book is aimed at graduate students, post docs and senior researchers with preliminary expertise in materials physics or chemistry, and with an interest in the physical and chemical properties of 4d- and 5d transition metal oxides, especially ruthenates and iridates. The 4d- and 5d-transition metal oxides are among the most current and interesting quantum materials. This book reviews recent experimental and theoretical evidence that the physical and structural properties of these materials are decisively influenced by strong spin-orbit interactions that compete with comparable Coulomb, magnetic exchange and crystalline electric field interactions. This competition often leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel coupling between the orbital/lattice and spin degrees of freedom, which seriously challenge current theoretical models and are not addressed by traditional textbooks, are of particular interest, This book also reviews a few techniques for single-crystal growth that are most suitable for the 4d- and 5d-transition metal oxides. The discussion is intended to help fill an existing void in the literature describing relevant synthesis techniques for 4d- and 5d-materials, which is a daunting experimental challenge.

Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. * Developed from both a theoretical and experimental viewpoint * Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena * Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses * Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions

This book offers a concise primer on energy conversion efficiency and the Shockley-Queisser limit in single p-n junction solar cells. It covers all the important fundamental physics necessary to understand the conversion efficiency, which is indispensable in studying, investigating, analyzing, and designing solar cells in practice. As such it is valuable as a supplementary text for courses on photovoltaics, and bridges the gap between advanced topics in solar cell device engineering and the fundamental physics covered in undergraduate courses. The book first introduces the principles and features of solar cells compared to those of chemical batteries, and reviews photons, statistics and radiation as the physics of the source energy. Based on these foundations, it clarifies the conversion efficiency of a single p-n junction solar cell and discusses the Shockley-Queisser limit. Furthermore, it looks into various concepts of solar cells for breaking through the efficiency limit given in the single junction solar cell and presents feasible theoretical predictions. To round out readers' knowledge of p-n junctions, the final chapter also reviews the essential semiconductor physics. The foundation of solar cell physics and engineering provided here is a valuable resource for readers with no background in solar cells, such as upper undergraduate and master students. At the same time, the deep insights provided allow readers to step seamlessly into other advanced books and their own research topics.

This book includes selected, peer-reviewed contributions from the 2018 International Conference on "Physics and Mechanics of New Materials and Their Applications", PHENMA 2018, held in Busan, South Korea, 9-11 August 2018. Focusing on manufacturing techniques, physics, mechanics, and applications of modern materials with special properties, it covers a broad spectrum of nanomaterials and structures, ferroelectrics and ferromagnetics, and other advanced materials and composites. The authors discuss approaches and methods in nanotechnology; newly developed, environmentally friendly piezoelectric techniques; and physical and mechanical studies of the microstructural and other properties of materials. Further, the book presents a range of original theoretical, experimental and computational methods and their application in the solution of various technological, mechanical and physical problems. Moreover, it highlights modern devices demonstrating high accuracy, longevity and the ability to operate over wide temperature and pressure ranges or in aggressive media. The developed devices show improved characteristics due to the use of advanced materials and composites, opening new horizons in the investigation of a variety of physical and mechanical processes and phenomena.

The first comprehensive guide to the chemicals and gases used in semiconductor manufacturing

The fabrication of semiconductor devices involves a series of complex chemical processes such as photolithography, etching, cleaning, thin film deposition, and polishing. Until now, there has been no convenient source of information on the properties, applications, and health and safety considerations of the chemicals used in these processes. The Handbook of Chemicals and Gases for the Semiconductor Industry meets this need.

Each of the Handbook’s eight chapters is related to a specific area of semiconductor processing. The authors provide a brief overview of each step in the process, followed by tables containing physical properties, handling, safety, and other pertinent information on chemicals and gases typically used in these processes. The 270 chemical and gas entries include data on physical properties, emergency treatment procedures, waste disposal, and incompatible materials, as well as descriptions of applications, chemical mechanisms involved, and references to the literature. Appendices cross-reference entries by process, chemical name, and CAS number. The Handbook’s eight chapters are:

• Thin Film Deposition Materials
• Water Cleaning Chemicals
• Photolithography Materials
• Wet and Dry Etching Materials
• Chemical Mechanical Planarizing Materials
• Carrier Gases
• Uncategorized Materials
• Semiconductor Chemicals Analysis

No other single source brings together these useful and important data on chemicals and gases used in the manufacture of semiconductor devices. The Handbook of Chemicals and Gases for the Semiconductor Industry will be a valuable reference for process engineers, scientists, suppliers to the semiconductor industry, microelectronics researchers, and students.

This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.

A new experimental method - the "Stiffnessometer", is developed to measure elementary properties of a superconductor, including the superconducting stiffness and the critical current. This technique has many advantages over existing methods, such as: the ability to measure these properties while minimally disturbing the system; the ability to measure large penetration depths (comparable to sample size), as necessary when approaching the critical temperature; and the ability to measure critical currents without attaching contacts and heating the sample. The power of this method is demonstrated in a study of the penetration depth of LSCO, where striking evidence is found for two separate critical temperatures for the in-plane and out-of-plane directions. The results in the thesis are novel, important and currently have no theoretical explanation. The stiffnessometer in a tool with great potential to explore new grounds in condensed matter physics.

This thesis deals with topological orders from two different perspectives: from a condensed matter point of view, where topological orders are considered as breakthrough phases of matter; and from the emerging realm of quantum computation, where topological quantum codes are considered the most appealing platform against decoherence. The thesis reports remarkable studies from both sides. It thoroughly investigates a topological order called the double semion model, a counterpart of the Kitaev model but exhibiting richer quasiparticles as excitations. A new model for symmetry enriched topological order is constructed, which adds an onsite global symmetry to the double semion model. Using this topological phase, a new example of topological code is developed, the semion code, which is non-CSS, additive, non-Pauli and within the stabiliser formalism. Furthermore, the thesis analyses the Rashba spin-orbit coupling within topological insulators, turning the helical edge states into generic edges modes with potential application in spinstronics. New types of topological superconductors are proposed and the novel properties of the correspondingly created Majorana fermions are investigated. These Majorana fermions have inherent properties enabling braiding and the performance of logical gates as fundamental blocks for a universsal quantum computator.

This thesis devotes three introductory chapters to outlining basic recipes for constructing the quantum Hamiltonian of an arbitrary superconducting circuit, starting from classical circuit design. Since a superconducting circuit is one of the most promising platforms for realizing a practical quantum computer, anyone who is starting out in the field will benefit greatly from this introduction. The second focus of the introduction is the ultrastrong light-matter interaction (USC), where the latest developments are described. This is followed by three main research works comprising quantum memory in USC; scaling up the 1D circuit to a 2D lattice configuration; creation of Noisy Intermediate-Scale Quantum era quantum error correction codes and polariton-mediated qubit-qubit interaction. The research work detailed in this thesis will make a major contribution to the development of quantum random access memory, a prerequisite for various quantum machine learning algorithms and applications.

This book presents the first experiment revealing several unexplored non-equilibrium properties of quantum many-body states, and addresses the interplay between the Kondo effect and superconductivity by probing shot noise. In addition, it describes in detail nano-fabrication techniques for carbon nanotube quantum dots, and a measurement protocol and principle that probes both equilibrium and non-equilibrium quantum states of electrons. The book offers various reviews of topics in mesoscopic systems: shot noise measurement, carbon nanotube quantum dots, the Kondo effect in quantum dots, and quantum dots with superconducting leads, which are relevant to probing non-equilibrium physics. These reviews offer particularly valuable resources for readers interested in non-equilibrium physics in mesoscopic systems. Further, the cutting-edge experimental results presented will allow reader to catch up on a vital new trend in the field.

This "Third Edition" updates a landmark text with the latest findings

"The Third Edition" of the internationally lauded "Semiconductor Material and Device Characterization" brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the "Third Edition" set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.

"Semiconductor Material and Device Characterization" remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated "Third Edition," including: Updated and revised figures and examples reflecting the most current data and information260 new references offering access to the latest research and discussions in specialized topicsNew problems and review questions at the end of each chapter to test readers' understanding of the material

In addition, readers will find fully updated and revised sections in each chapter.

Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.

Written by an internationally recognized authority in the field, "Semiconductor Material and Device Characterization" remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.

An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

This concise volume provides an introduction to the working principles, design, and construction of air-stable inverted organic light-emitting diodes (OLEDs), which lead to the realization of practical flexible electronics. The first part of the book reviews the history of the three generations of inverted OLEDs: hybrid organic inorganic light-emitting diodes (HOILEDs), metal oxides and organic electron injection layer, describing the materials, fabrication techniques, device structure, applications, and technological challenges involved in each case. The second part of the book focuses on the carrier injection mechanism in OLEDs. The book will be of interest to students and researchers working on organic optoelectronics.